JP2012502796A - 流体供給装置及びその形成方法 - Google Patents

流体供給装置及びその形成方法 Download PDF

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Publication number
JP2012502796A
JP2012502796A JP2011528058A JP2011528058A JP2012502796A JP 2012502796 A JP2012502796 A JP 2012502796A JP 2011528058 A JP2011528058 A JP 2011528058A JP 2011528058 A JP2011528058 A JP 2011528058A JP 2012502796 A JP2012502796 A JP 2012502796A
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JP
Japan
Prior art keywords
fluid supply
layer
supply device
plenum
fluid
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2011528058A
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English (en)
Japanese (ja)
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JP2012502796A5 (https=
Inventor
ジョン マリナー
マーク シャプケンズ
デイビッド マイケル ルシンコ
Original Assignee
モーメンティブ・パフォーマンス・マテリアルズ・インク
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Publication of JP2012502796A publication Critical patent/JP2012502796A/ja
Publication of JP2012502796A5 publication Critical patent/JP2012502796A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2011528058A 2008-09-22 2009-09-22 流体供給装置及びその形成方法 Pending JP2012502796A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/284,418 US20100071614A1 (en) 2008-09-22 2008-09-22 Fluid distribution apparatus and method of forming the same
US12/284,418 2008-09-22
PCT/US2009/057803 WO2010033973A1 (en) 2008-09-22 2009-09-22 Fluid distribution apparatus and method of forming the same

Publications (2)

Publication Number Publication Date
JP2012502796A true JP2012502796A (ja) 2012-02-02
JP2012502796A5 JP2012502796A5 (https=) 2013-05-23

Family

ID=42036317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528058A Pending JP2012502796A (ja) 2008-09-22 2009-09-22 流体供給装置及びその形成方法

Country Status (5)

Country Link
US (1) US20100071614A1 (https=)
EP (1) EP2328832A1 (https=)
JP (1) JP2012502796A (https=)
CN (1) CN102159495A (https=)
WO (1) WO2010033973A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130145989A1 (en) * 2011-12-12 2013-06-13 Intermolecular, Inc. Substrate processing tool showerhead
TWI754765B (zh) * 2017-08-25 2022-02-11 美商應用材料股份有限公司 用於磊晶沉積製程之注入組件

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132798A (ja) * 1985-12-03 1987-06-16 Denki Kagaku Kogyo Kk 化合物半導体育成用るつぼとその製造方法
JPH02500427A (ja) * 1987-04-27 1990-02-15 シーメンス、アクチエンゲゼルシヤフト セラミック箔又はこの箔から構成されたセラミック箔の製法
JPH03272587A (ja) * 1990-03-22 1991-12-04 Oki Electric Ind Co Ltd 耐食性部材
JP2001274103A (ja) * 2000-01-20 2001-10-05 Sumitomo Electric Ind Ltd 半導体製造装置用ガスシャワー体
JP2003517156A (ja) * 1999-12-15 2003-05-20 モトローラ・インコーポレイテッド 生物学的反応を行う組成物および方法
JP2003209074A (ja) * 2002-01-11 2003-07-25 Shibaura Mechatronics Corp エッチング装置及びエッチング方法
JP2006513064A (ja) * 2003-01-07 2006-04-20 インターナショナル・ビジネス・マシーンズ・コーポレーション マルチチャネルおよびマルチレイヤー製薬装置
JP2007507714A (ja) * 2003-09-30 2007-03-29 インターナショナル・ビジネス・マシーンズ・コーポレーション サンプル保持プレートおよびそれを形成する方法ならびにそれを操作するための支持操作構造（マイクロ流体パッケージ化）
JP2008114218A (ja) * 2006-10-11 2008-05-22 Canon Inc 流体処理装置および流体処理システム
JP2008522806A (ja) * 2004-12-06 2008-07-03 キュー チップ リミテッド 流体輸送のための装置

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US4774416A (en) * 1986-09-24 1988-09-27 Plaser Corporation Large cross-sectional area molecular beam source for semiconductor processing
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
KR950020993A (ko) * 1993-12-22 1995-07-26 김광호 반도체 제조장치
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
DE29517100U1 (de) * 1995-10-17 1997-02-13 Zimmer, Johannes, Klagenfurt Strömungsteilungs- und -umformungskörper
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
TWI334888B (https=) * 2000-09-08 2010-12-21 Tokyo Electron Ltd
DE10100670A1 (de) * 2001-01-09 2002-08-14 Univ Braunschweig Tech Zuführvorrichtung für eine CVD-Anlage
US20040074898A1 (en) * 2002-10-21 2004-04-22 Mariner John T. Encapsulated graphite heater and process
US20060096946A1 (en) * 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
US7799371B2 (en) * 2005-11-17 2010-09-21 Palo Alto Research Center Incorporated Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US7901509B2 (en) * 2006-09-19 2011-03-08 Momentive Performance Materials Inc. Heating apparatus with enhanced thermal uniformity and method for making thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132798A (ja) * 1985-12-03 1987-06-16 Denki Kagaku Kogyo Kk 化合物半導体育成用るつぼとその製造方法
JPH02500427A (ja) * 1987-04-27 1990-02-15 シーメンス、アクチエンゲゼルシヤフト セラミック箔又はこの箔から構成されたセラミック箔の製法
JPH03272587A (ja) * 1990-03-22 1991-12-04 Oki Electric Ind Co Ltd 耐食性部材
JP2003517156A (ja) * 1999-12-15 2003-05-20 モトローラ・インコーポレイテッド 生物学的反応を行う組成物および方法
JP2001274103A (ja) * 2000-01-20 2001-10-05 Sumitomo Electric Ind Ltd 半導体製造装置用ガスシャワー体
JP2003209074A (ja) * 2002-01-11 2003-07-25 Shibaura Mechatronics Corp エッチング装置及びエッチング方法
JP2006513064A (ja) * 2003-01-07 2006-04-20 インターナショナル・ビジネス・マシーンズ・コーポレーション マルチチャネルおよびマルチレイヤー製薬装置
JP2007507714A (ja) * 2003-09-30 2007-03-29 インターナショナル・ビジネス・マシーンズ・コーポレーション サンプル保持プレートおよびそれを形成する方法ならびにそれを操作するための支持操作構造（マイクロ流体パッケージ化）
JP2008522806A (ja) * 2004-12-06 2008-07-03 キュー チップ リミテッド 流体輸送のための装置
JP2008114218A (ja) * 2006-10-11 2008-05-22 Canon Inc 流体処理装置および流体処理システム

Also Published As

Publication number Publication date
US20100071614A1 (en) 2010-03-25
WO2010033973A1 (en) 2010-03-25
EP2328832A1 (en) 2011-06-08
CN102159495A (zh) 2011-08-17

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