JP2012502504A - あらかじめ選択された中間生成物を介する高速薄膜蒸着 - Google Patents
あらかじめ選択された中間生成物を介する高速薄膜蒸着 Download PDFInfo
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- JP2012502504A JP2012502504A JP2011526952A JP2011526952A JP2012502504A JP 2012502504 A JP2012502504 A JP 2012502504A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2012502504 A JP2012502504 A JP 2012502504A
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- Prior art keywords
- thin film
- film material
- intermediate product
- carrier gas
- deposition
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- 239000013067 intermediate product Substances 0.000 title claims abstract description 168
- 238000000427 thin-film deposition Methods 0.000 title description 2
- 239000002243 precursor Substances 0.000 claims abstract description 227
- 239000000463 material Substances 0.000 claims abstract description 170
- 230000008021 deposition Effects 0.000 claims abstract description 160
- 239000012159 carrier gas Substances 0.000 claims abstract description 155
- 239000010409 thin film Substances 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 74
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- 230000007935 neutral effect Effects 0.000 claims description 49
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- 229910052731 fluorine Inorganic materials 0.000 claims description 33
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- 239000007789 gas Substances 0.000 claims description 32
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
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- 238000007740 vapor deposition Methods 0.000 claims description 24
- 239000000654 additive Substances 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 21
- 230000000996 additive effect Effects 0.000 claims description 15
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- 239000001257 hydrogen Substances 0.000 claims description 11
- 239000000047 product Substances 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 8
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 238000010790 dilution Methods 0.000 claims 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
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- 229910003828 SiH3 Inorganic materials 0.000 abstract 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 abstract 1
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- 150000003254 radicals Chemical class 0.000 description 41
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
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- 238000006243 chemical reaction Methods 0.000 description 9
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000927 Ge alloy Inorganic materials 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
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- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
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- 238000009434 installation Methods 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/209,699 US8252112B2 (en) | 2008-09-12 | 2008-09-12 | High speed thin film deposition via pre-selected intermediate |
| US12/209,699 | 2008-09-12 | ||
| PCT/US2009/056445 WO2010030729A2 (en) | 2008-09-12 | 2009-09-10 | High speed thin film deposition via pre-selected intermediate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012502504A true JP2012502504A (ja) | 2012-01-26 |
| JP2012502504A5 JP2012502504A5 (enExample) | 2012-10-25 |
Family
ID=42005730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011526952A Pending JP2012502504A (ja) | 2008-09-12 | 2009-09-10 | あらかじめ選択された中間生成物を介する高速薄膜蒸着 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8252112B2 (enExample) |
| EP (1) | EP2327087A2 (enExample) |
| JP (1) | JP2012502504A (enExample) |
| KR (1) | KR20110053349A (enExample) |
| CN (1) | CN102150236A (enExample) |
| WO (1) | WO2010030729A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US9177756B2 (en) | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US8980046B2 (en) | 2011-04-11 | 2015-03-17 | Lam Research Corporation | Semiconductor processing system with source for decoupled ion and radical control |
| US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| CN103022178A (zh) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 利用四氟化硅制作高效率微晶硅薄膜太阳能电池 |
| US20130272928A1 (en) * | 2012-04-12 | 2013-10-17 | Devi Shanker Misra | Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein |
| US10319872B2 (en) * | 2012-05-10 | 2019-06-11 | International Business Machines Corporation | Cost-efficient high power PECVD deposition for solar cells |
| WO2015005905A1 (en) | 2013-07-09 | 2015-01-15 | Halliburton Energy Services, Inc. | Integrated computational elements with laterally-distributed spectral filters |
| US10247662B2 (en) | 2013-07-09 | 2019-04-02 | Halliburton Energy Services, Inc. | Integrated computational elements with frequency selective surface |
| MX359927B (es) | 2013-12-24 | 2018-10-16 | Halliburton Energy Services Inc | Fabricacion de capas criticas de elementos computacionales integrados. |
| MX362272B (es) | 2013-12-24 | 2019-01-10 | Halliburton Energy Services Inc | Ajuste de la fabricacion de elementos computacionales integrados. |
| US9395721B2 (en) | 2013-12-24 | 2016-07-19 | Halliburton Energy Services, Inc. | In-situ monitoring of fabrication of integrated computational elements |
| WO2015099709A1 (en) | 2013-12-24 | 2015-07-02 | Halliburton Energy Services, Inc. | Real-time monitoring of fabrication of integrated computational elements |
| MX361204B (es) | 2013-12-30 | 2018-11-30 | Halliburton Energy Services Inc | Determinación de la dependencia de temperatura de índices de refracción complejos de los materiales de capa durante la fabricación de elementos informáticos integrados. |
| EP2929319A4 (en) | 2013-12-31 | 2016-12-21 | Halliburton Energy Services Inc | FABRICATION OF INTEGRATED COMPUTER PROCESSING ELEMENTS USING A SHAPED SUBSTRATE CARRIER TO COINCIDE WITH THE SPATIAL PROFILE OF A DEPOSIT PANACHE |
| BR112016015543A2 (pt) | 2014-02-14 | 2017-08-08 | Halliburton Energy Services Inc | Método e sistema |
| EP2943774A4 (en) | 2014-03-21 | 2016-05-11 | Halliburton Energy Services Inc | MONOLITHIC, BAND-LIMITED, INTEGRATED CALCULATION ELEMENTS |
| EP3129592A4 (en) | 2014-06-13 | 2017-11-29 | Halliburton Energy Services, Inc. | Integrated computational element with multiple frequency selective surfaces |
| CN104152864B (zh) * | 2014-08-22 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 硅薄膜的制备方法 |
| KR102075418B1 (ko) * | 2015-04-14 | 2020-02-11 | (주)디엔에프 | 니켈 함유 박막의 제조방법 및 이에 따라 제조된 니켈 함유 박막 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0219471A (ja) * | 1988-05-26 | 1990-01-23 | Energy Conversion Devices Inc | 薄膜を作製する方法 |
| JPH0380531A (ja) * | 1989-05-24 | 1991-04-05 | Hitachi Ltd | 表面処理方法と装置及び薄膜部材 |
| JP2000096239A (ja) * | 1998-09-21 | 2000-04-04 | Tokuyama Corp | 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置 |
| US20060219170A1 (en) * | 2002-01-11 | 2006-10-05 | Energy Conversion Devices, Inc. | Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
| US6313017B1 (en) * | 1999-01-26 | 2001-11-06 | University Of Vermont And State Agricultural College | Plasma enhanced CVD process for rapidly growing semiconductor films |
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| AU2002306436A1 (en) * | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
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-
2008
- 2008-09-12 US US12/209,699 patent/US8252112B2/en not_active Expired - Fee Related
-
2009
- 2009-09-10 EP EP09813573A patent/EP2327087A2/en not_active Withdrawn
- 2009-09-10 CN CN2009801358105A patent/CN102150236A/zh active Pending
- 2009-09-10 WO PCT/US2009/056445 patent/WO2010030729A2/en not_active Ceased
- 2009-09-10 JP JP2011526952A patent/JP2012502504A/ja active Pending
- 2009-09-10 KR KR1020117005513A patent/KR20110053349A/ko not_active Withdrawn
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| JPH0219471A (ja) * | 1988-05-26 | 1990-01-23 | Energy Conversion Devices Inc | 薄膜を作製する方法 |
| JPH0380531A (ja) * | 1989-05-24 | 1991-04-05 | Hitachi Ltd | 表面処理方法と装置及び薄膜部材 |
| JP2000096239A (ja) * | 1998-09-21 | 2000-04-04 | Tokuyama Corp | 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置 |
| US20060219170A1 (en) * | 2002-01-11 | 2006-10-05 | Energy Conversion Devices, Inc. | Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102150236A (zh) | 2011-08-10 |
| EP2327087A2 (en) | 2011-06-01 |
| WO2010030729A3 (en) | 2010-05-06 |
| WO2010030729A2 (en) | 2010-03-18 |
| US20100068870A1 (en) | 2010-03-18 |
| KR20110053349A (ko) | 2011-05-20 |
| US8252112B2 (en) | 2012-08-28 |
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