JP2012502504A - あらかじめ選択された中間生成物を介する高速薄膜蒸着 - Google Patents

あらかじめ選択された中間生成物を介する高速薄膜蒸着 Download PDF

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JP2012502504A
JP2012502504A JP2011526952A JP2011526952A JP2012502504A JP 2012502504 A JP2012502504 A JP 2012502504A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2012502504 A JP2012502504 A JP 2012502504A
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thin film
film material
intermediate product
carrier gas
deposition
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Japanese (ja)
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JP2012502504A5 (enExample
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オブシンスキー，スタンフォード
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オブシンスキー イノベーション，エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2011526952A 2008-09-12 2009-09-10 あらかじめ選択された中間生成物を介する高速薄膜蒸着 Pending JP2012502504A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/209,699 US8252112B2 (en) 2008-09-12 2008-09-12 High speed thin film deposition via pre-selected intermediate
US12/209,699 2008-09-12
PCT/US2009/056445 WO2010030729A2 (en) 2008-09-12 2009-09-10 High speed thin film deposition via pre-selected intermediate

Publications (2)

Publication Number Publication Date
JP2012502504A true JP2012502504A (ja) 2012-01-26
JP2012502504A5 JP2012502504A5 (enExample) 2012-10-25

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JP2011526952A Pending JP2012502504A (ja) 2008-09-12 2009-09-10 あらかじめ選択された中間生成物を介する高速薄膜蒸着

Country Status (6)

Country Link
US (1) US8252112B2 (enExample)
EP (1) EP2327087A2 (enExample)
JP (1) JP2012502504A (enExample)
KR (1) KR20110053349A (enExample)
CN (1) CN102150236A (enExample)
WO (1) WO2010030729A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US9177756B2 (en) 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
CN103022178A (zh) * 2011-09-23 2013-04-03 吉富新能源科技(上海)有限公司 利用四氟化硅制作高效率微晶硅薄膜太阳能电池
US20130272928A1 (en) * 2012-04-12 2013-10-17 Devi Shanker Misra Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
US10319872B2 (en) * 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
US10718881B2 (en) 2013-07-09 2020-07-21 Halliburton Energy Services, Inc. Integrated computational elements with laterally-distributed spectral filters
BR112015029784A2 (pt) 2013-07-09 2017-07-25 Halliburton Energy Services Inc sistema, ferramenta de medição e método
EP2909763A4 (en) 2013-12-24 2015-12-23 Halliburton Energy Services Inc SETTING UP THE MANUFACTURE OF INTEGRATED CALCULATION ELEMENTS
US9395721B2 (en) 2013-12-24 2016-07-19 Halliburton Energy Services, Inc. In-situ monitoring of fabrication of integrated computational elements
WO2015099709A1 (en) 2013-12-24 2015-07-02 Halliburton Energy Services, Inc. Real-time monitoring of fabrication of integrated computational elements
EP2909762B1 (en) 2013-12-24 2016-12-21 Halliburton Energy Services, Inc. Fabrication of critical layers of integrated computational elements
EP3063682A1 (en) 2013-12-30 2016-09-07 Halliburton Energy Services, Inc. Determining temperature dependence of complex refractive indices of layer materials during fabrication of integrated computational elements
EP2929319A4 (en) 2013-12-31 2016-12-21 Halliburton Energy Services Inc FABRICATION OF INTEGRATED COMPUTER PROCESSING ELEMENTS USING A SHAPED SUBSTRATE CARRIER TO COINCIDE WITH THE SPATIAL PROFILE OF A DEPOSIT PANACHE
MX359196B (es) 2014-02-14 2018-09-19 Halliburton Energy Services Inc Espectroscopía in situ para el monitoreo de la fabricación de elementos computacionales integrados.
EP2943774A4 (en) 2014-03-21 2016-05-11 Halliburton Energy Services Inc MONOLITHIC, BAND-LIMITED, INTEGRATED CALCULATION ELEMENTS
MX2016015788A (es) 2014-06-13 2017-04-25 Halliburton Energy Services Inc Elemento computacional integrado con multiples superficies selectivas de frecuencia.
CN104152864B (zh) * 2014-08-22 2016-11-16 中国科学院宁波材料技术与工程研究所 硅薄膜的制备方法
KR102075418B1 (ko) * 2015-04-14 2020-02-11 (주)디엔에프 니켈 함유 박막의 제조방법 및 이에 따라 제조된 니켈 함유 박막

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219471A (ja) * 1988-05-26 1990-01-23 Energy Conversion Devices Inc 薄膜を作製する方法
JPH0380531A (ja) * 1989-05-24 1991-04-05 Hitachi Ltd 表面処理方法と装置及び薄膜部材
JP2000096239A (ja) * 1998-09-21 2000-04-04 Tokuyama Corp 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置
US20060219170A1 (en) * 2002-01-11 2006-10-05 Energy Conversion Devices, Inc. Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
US6313017B1 (en) * 1999-01-26 2001-11-06 University Of Vermont And State Agricultural College Plasma enhanced CVD process for rapidly growing semiconductor films
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
WO2002080244A2 (en) * 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
DE602004009341D1 (de) * 2003-07-25 2007-11-15 Lightwind Corp Verfahren und vorrichtung zur überwachung chemischer prozesse
US20080090022A1 (en) * 2006-10-12 2008-04-17 Energy Conversion Devices, Inc. High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219471A (ja) * 1988-05-26 1990-01-23 Energy Conversion Devices Inc 薄膜を作製する方法
JPH0380531A (ja) * 1989-05-24 1991-04-05 Hitachi Ltd 表面処理方法と装置及び薄膜部材
JP2000096239A (ja) * 1998-09-21 2000-04-04 Tokuyama Corp 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置
US20060219170A1 (en) * 2002-01-11 2006-10-05 Energy Conversion Devices, Inc. Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency

Also Published As

Publication number Publication date
US20100068870A1 (en) 2010-03-18
US8252112B2 (en) 2012-08-28
CN102150236A (zh) 2011-08-10
KR20110053349A (ko) 2011-05-20
WO2010030729A3 (en) 2010-05-06
WO2010030729A2 (en) 2010-03-18
EP2327087A2 (en) 2011-06-01

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