JP2012502504A - あらかじめ選択された中間生成物を介する高速薄膜蒸着 - Google Patents

あらかじめ選択された中間生成物を介する高速薄膜蒸着 Download PDF

Info

Publication number
JP2012502504A
JP2012502504A JP2011526952A JP2011526952A JP2012502504A JP 2012502504 A JP2012502504 A JP 2012502504A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2012502504 A JP2012502504 A JP 2012502504A
Authority
JP
Japan
Prior art keywords
thin film
film material
intermediate product
carrier gas
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011526952A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012502504A5 (enExample
Inventor
オブシンスキー，スタンフォード
Original Assignee
オブシンスキー イノベーション，エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オブシンスキー イノベーション，エルエルシー filed Critical オブシンスキー イノベーション，エルエルシー
Publication of JP2012502504A publication Critical patent/JP2012502504A/ja
Publication of JP2012502504A5 publication Critical patent/JP2012502504A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10P14/24—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2011526952A 2008-09-12 2009-09-10 あらかじめ選択された中間生成物を介する高速薄膜蒸着 Pending JP2012502504A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/209,699 US8252112B2 (en) 2008-09-12 2008-09-12 High speed thin film deposition via pre-selected intermediate
US12/209,699 2008-09-12
PCT/US2009/056445 WO2010030729A2 (en) 2008-09-12 2009-09-10 High speed thin film deposition via pre-selected intermediate

Publications (2)

Publication Number Publication Date
JP2012502504A true JP2012502504A (ja) 2012-01-26
JP2012502504A5 JP2012502504A5 (enExample) 2012-10-25

Family

ID=42005730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011526952A Pending JP2012502504A (ja) 2008-09-12 2009-09-10 あらかじめ選択された中間生成物を介する高速薄膜蒸着

Country Status (6)

Country Link
US (1) US8252112B2 (enExample)
EP (1) EP2327087A2 (enExample)
JP (1) JP2012502504A (enExample)
KR (1) KR20110053349A (enExample)
CN (1) CN102150236A (enExample)
WO (1) WO2010030729A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US9177756B2 (en) 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
CN103022178A (zh) * 2011-09-23 2013-04-03 吉富新能源科技(上海)有限公司 利用四氟化硅制作高效率微晶硅薄膜太阳能电池
US20130272928A1 (en) * 2012-04-12 2013-10-17 Devi Shanker Misra Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
US10319872B2 (en) 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
US10247662B2 (en) 2013-07-09 2019-04-02 Halliburton Energy Services, Inc. Integrated computational elements with frequency selective surface
AU2013393870B2 (en) 2013-07-09 2017-06-29 Halliburton Energy Services, Inc. Integrated computational elements with laterally-distributed spectral filters
US9395721B2 (en) 2013-12-24 2016-07-19 Halliburton Energy Services, Inc. In-situ monitoring of fabrication of integrated computational elements
EP2901135B1 (en) 2013-12-24 2016-08-24 Halliburton Energy Services, Inc. Real-time monitoring of fabrication of integrated computational elements
MX359927B (es) 2013-12-24 2018-10-16 Halliburton Energy Services Inc Fabricacion de capas criticas de elementos computacionales integrados.
MX362272B (es) 2013-12-24 2019-01-10 Halliburton Energy Services Inc Ajuste de la fabricacion de elementos computacionales integrados.
WO2015102586A1 (en) 2013-12-30 2015-07-09 Halliburton Energy Services, Inc. Determining temperature dependence of complex refractive indices of layer materials during fabrication of integrated computational elements
BR112016011904A2 (pt) 2013-12-31 2017-08-08 Halliburton Energy Services Inc Sistema fabricação de um elemento computacional integrado
MX359196B (es) 2014-02-14 2018-09-19 Halliburton Energy Services Inc Espectroscopía in situ para el monitoreo de la fabricación de elementos computacionales integrados.
BR112016016251B1 (pt) 2014-03-21 2020-11-17 Halliburton Energy Services, Inc ferramenta de análise óptica e sistema de perfilagem do poço
EP3129592A4 (en) 2014-06-13 2017-11-29 Halliburton Energy Services, Inc. Integrated computational element with multiple frequency selective surfaces
CN104152864B (zh) * 2014-08-22 2016-11-16 中国科学院宁波材料技术与工程研究所 硅薄膜的制备方法
KR102075418B1 (ko) * 2015-04-14 2020-02-11 (주)디엔에프 니켈 함유 박막의 제조방법 및 이에 따라 제조된 니켈 함유 박막

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219471A (ja) * 1988-05-26 1990-01-23 Energy Conversion Devices Inc 薄膜を作製する方法
JPH0380531A (ja) * 1989-05-24 1991-04-05 Hitachi Ltd 表面処理方法と装置及び薄膜部材
JP2000096239A (ja) * 1998-09-21 2000-04-04 Tokuyama Corp 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置
US20060219170A1 (en) * 2002-01-11 2006-10-05 Energy Conversion Devices, Inc. Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
US6313017B1 (en) * 1999-01-26 2001-11-06 University Of Vermont And State Agricultural College Plasma enhanced CVD process for rapidly growing semiconductor films
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
KR101027485B1 (ko) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
EP1697727B1 (en) * 2003-07-25 2007-10-03 Lightwind Corporation Method and apparatus for monitoring chemical processes
US20080090022A1 (en) * 2006-10-12 2008-04-17 Energy Conversion Devices, Inc. High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219471A (ja) * 1988-05-26 1990-01-23 Energy Conversion Devices Inc 薄膜を作製する方法
JPH0380531A (ja) * 1989-05-24 1991-04-05 Hitachi Ltd 表面処理方法と装置及び薄膜部材
JP2000096239A (ja) * 1998-09-21 2000-04-04 Tokuyama Corp 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置
US20060219170A1 (en) * 2002-01-11 2006-10-05 Energy Conversion Devices, Inc. Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency

Also Published As

Publication number Publication date
US20100068870A1 (en) 2010-03-18
KR20110053349A (ko) 2011-05-20
US8252112B2 (en) 2012-08-28
CN102150236A (zh) 2011-08-10
EP2327087A2 (en) 2011-06-01
WO2010030729A2 (en) 2010-03-18
WO2010030729A3 (en) 2010-05-06

Similar Documents

Publication Publication Date Title
JP2012502504A (ja) あらかじめ選択された中間生成物を介する高速薄膜蒸着
US8168268B2 (en) Thin film deposition via a spatially-coordinated and time-synchronized process
US8222125B2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
Schropp Industrialization of hot wire chemical vapor deposition for thin film applications
EP0106698A2 (en) Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
US20130295709A1 (en) Method for manufacturing photoelectric conversion elements
CN102388468A (zh) 经由磁约束获得的带电微粒耗尽等离子体的薄膜沉积
US20080090022A1 (en) High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials
US20090130337A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20090050058A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
WO2011044359A2 (en) Remote plasma apparatus for manufacturing solar cells
US8048782B1 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US20120167963A1 (en) Photovoltaic Device Structure with Primer Layer
US20090031951A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US8273641B2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US8101245B1 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US20090053428A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
Niikura et al. High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode
JP2003524705A (ja) 薄膜材料の堆積及び／又は表面改質用電子ビーム／マイクロ波ガス噴射ｐｅｃｖｄ方法並びに装置
WO2012092051A2 (en) Photovoltaic device structure with primer layer
JPH04373122A (ja) 薄膜半導体の製造法
WO2010027841A2 (en) High speed deposition of materials having low defect density
Schropp Present status of hot wire chemical vapor deposition technology
Jia et al. Fast deposition of highly crystallized microcrystalline Si films utilizing a high-density microwave plasma source for si thin film solar cells
WO2012021325A2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120905

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120905

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140408