JP2012502481A5 - - Google Patents

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Publication number
JP2012502481A5
JP2012502481A5 JP2011526196A JP2011526196A JP2012502481A5 JP 2012502481 A5 JP2012502481 A5 JP 2012502481A5 JP 2011526196 A JP2011526196 A JP 2011526196A JP 2011526196 A JP2011526196 A JP 2011526196A JP 2012502481 A5 JP2012502481 A5 JP 2012502481A5
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JP
Japan
Prior art keywords
bulk capacitor
ceramic body
porous ceramic
capacitor according
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011526196A
Other languages
Japanese (ja)
Other versions
JP2012502481A (en
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/055874 external-priority patent/WO2010028138A2/en
Publication of JP2012502481A publication Critical patent/JP2012502481A/en
Publication of JP2012502481A5 publication Critical patent/JP2012502481A5/ja
Pending legal-status Critical Current

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Claims (15)

金属箔から形成された第1電極と、
前記金属箔の上に形成された半導体の多孔質セラミック本体と、
前記多孔質セラミック本体の上に形成された誘電体層と、
前記誘電体層上に設けられ、前記多孔質セラミック本体の少なくとも一部に充填されて第2電極を形成する導電性媒質、を備えた、
ことを特徴とするバルクコンデンサ。
A first electrode formed from a metal foil;
A porous ceramic body of semiconductor formed on the metal foil;
A dielectric layer formed on the porous ceramic body;
A conductive medium provided on the dielectric layer and filled in at least a part of the porous ceramic body to form a second electrode;
A bulk capacitor characterized by that.
前記多孔質セラミック本体をカプセル化する導電性金属層、をさらに備えた、
ことを特徴とする請求項1記載のバルクコンデンサ。
A conductive metal layer encapsulating the porous ceramic body;
The bulk capacitor according to claim 1.
前記金属箔と前記多孔質セラミック本体との間に形成された半導体セラミック層、をさらに備えた、
ことを特徴とする請求項1記載のバルクコンデンサ。
A semiconductor ceramic layer formed between the metal foil and the porous ceramic body,
The bulk capacitor according to claim 1.
前記金属箔は、幾何学的外形形状を有する、
ことを特徴とする請求項1記載のバルクコンデンサ。
The metal foil has a geometric outer shape,
The bulk capacitor according to claim 1.
前記導電性媒質は、導電性ポリマーを含む、
ことを特徴とする請求項1記載のバルクコンデンサ。
The conductive medium includes a conductive polymer,
The bulk capacitor according to claim 1.
前記多孔質セラミック本体と前記誘電体層との組み合わせにより、500〜50000の誘電率(K)を有することを特徴とする請求項1記載のバルクコンデンサ。The bulk capacitor according to claim 1, wherein a dielectric constant (K) of 500 to 50,000 is obtained by a combination of the porous ceramic body and the dielectric layer. 前記誘電体層は、前記多孔質セラミック本体および前記金属箔の上に形成されている、
ことを特徴とする請求項1記載のバルクコンデンサ。
The dielectric layer is formed on the porous ceramic body and the metal foil.
The bulk capacitor according to claim 1.
金属箔を含む第1電極の上に半導体の多孔質セラミック本体を形成する工程と、
前記多孔質セラミック本体を酸化処理して誘電体層を形成する工程と、
前記誘電体層上に導電性媒質を設け、前記多孔質セラミック本体に当該導電性媒質を充填して第2電極を形成する工程、を有する、
ことを特徴とするバルクコンデンサの製造方法。
Forming a semiconductor porous ceramic body on a first electrode including a metal foil;
Oxidizing the porous ceramic body to form a dielectric layer;
The provided a conductive medium on the dielectric layer, a step, of forming the second electrode by filling the conductive medium to the porous ceramic body,
A method for manufacturing a bulk capacitor.
前記多孔質セラミック本体を導電性金属層でカプセル化する工程、をさらに有する、
ことを特徴とする請求項記載のバルクコンデンサの製造方法。
Further comprising encapsulating the porous ceramic body with a conductive metal layer.
The method for manufacturing a bulk capacitor according to claim 8 .
前記金属箔と前記多孔質セラミック本体の間に半導体セラミック層を形成する工程、をさらに有する、
ことを特徴とする請求項記載のバルクコンデンサの製造方法。
Forming a semiconductor ceramic layer between the metal foil and the porous ceramic body,
The method for manufacturing a bulk capacitor according to claim 8 .
前記金属箔を幾何学的外形形状にする工程、をさらに有する、
ことを特徴とする請求項記載のバルクコンデンサの製造方法。
Further comprising the step of making the metal foil a geometric outer shape,
The method for manufacturing a bulk capacitor according to claim 8 .
前記酸化処理は、熱的に行われる、
ことを特徴とする請求項記載のバルクコンデンサの製造方法。
The oxidation treatment is performed thermally.
The method for manufacturing a bulk capacitor according to claim 8 .
前記酸化処理は、電気化学的に行われる、
ことを特徴とする請求項記載のバルクコンデンサの製造方法。
The oxidation treatment is performed electrochemically.
The method for manufacturing a bulk capacitor according to claim 8 .
前記導電性媒質は、導電性ポリマーを含む、
ことを特徴とする請求項記載のバルクコンデンサの製造方法。
The conductive medium includes a conductive polymer,
The method for manufacturing a bulk capacitor according to claim 8 .
前記多孔質セラミック本体と前記誘電体層との組み合わせにより、500〜50000の誘電率(K)を有することを特徴とする請求項8記載のバルクコンデンサの製造方法。The method for manufacturing a bulk capacitor according to claim 8, wherein a dielectric constant (K) of 500 to 50,000 is obtained by a combination of the porous ceramic body and the dielectric layer.
JP2011526196A 2008-09-04 2009-09-03 Bulk capacitor and manufacturing method thereof Pending JP2012502481A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9431708P 2008-09-04 2008-09-04
US61/094,317 2008-09-04
PCT/US2009/055874 WO2010028138A2 (en) 2008-09-04 2009-09-03 Bulk capacitor and method

Publications (2)

Publication Number Publication Date
JP2012502481A JP2012502481A (en) 2012-01-26
JP2012502481A5 true JP2012502481A5 (en) 2012-03-15

Family

ID=41622560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011526196A Pending JP2012502481A (en) 2008-09-04 2009-09-03 Bulk capacitor and manufacturing method thereof

Country Status (8)

Country Link
US (2) US8238076B2 (en)
EP (1) EP2329506A2 (en)
JP (1) JP2012502481A (en)
KR (2) KR20120089778A (en)
CN (2) CN102856075A (en)
HK (1) HK1161933A1 (en)
TW (1) TW201021061A (en)
WO (1) WO2010028138A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100415264B1 (en) * 2001-04-04 2004-01-14 김재용 Composition of soil remormation
KR20030054118A (en) * 2001-12-24 2003-07-02 이명희 A composite of soil conditioner
KR20030054116A (en) * 2001-12-24 2003-07-02 이명희 A composite for grow in plant
KR101973438B1 (en) * 2017-07-19 2019-04-29 삼성전기주식회사 Capacitor Component

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585460A (en) * 1969-11-10 1971-06-15 Rca Corp Miniature ceramic capacitor and method of manufacture
JPS5522162U (en) * 1978-07-28 1980-02-13
US4520430A (en) * 1983-01-28 1985-05-28 Union Carbide Corporation Lead attachment for tantalum anode bodies
JPS60116225U (en) * 1984-01-10 1985-08-06 日本通信工業株式会社 semiconductor ceramic capacitor
JPS61193418A (en) * 1985-02-21 1986-08-27 株式会社村田製作所 Laminate ceramic capacitor
JP3065286B2 (en) 1997-09-24 2000-07-17 日本電気株式会社 Solid electrolytic capacitor and method of manufacturing the same
US6344966B1 (en) * 1998-09-08 2002-02-05 Showa Denko K.K. Solid electrolytic capacitor and method for producing the same
US6226173B1 (en) * 1999-01-26 2001-05-01 Case Western Reserve University Directionally-grown capacitor anodes
US6456483B1 (en) * 1999-04-14 2002-09-24 Becromal S.P.A. Electrodes for electrolytic capacitors and production process thereof
US6381121B1 (en) * 1999-05-24 2002-04-30 Showa Denko Kabushiki Kaisha Solid electrolytic capacitor
WO2001057928A1 (en) * 2000-02-03 2001-08-09 Case Western Reserve University High power capacitors from thin layers of metal powder or metal sponge particles
JP3763307B2 (en) * 2001-11-08 2006-04-05 松下電器産業株式会社 Capacitor and its manufacturing method
TW200522109A (en) * 2003-11-13 2005-07-01 Showa Denko Kk Solid electrolyte capacitor
JP2005158816A (en) * 2003-11-20 2005-06-16 Tdk Corp Electrochemical device and manufacturing method thereof
US7099143B1 (en) * 2005-05-24 2006-08-29 Avx Corporation Wet electrolytic capacitors
US8264819B2 (en) * 2005-08-19 2012-09-11 Avx Corporation Polymer based solid state capacitors and a method of manufacturing them
US20080232032A1 (en) * 2007-03-20 2008-09-25 Avx Corporation Anode for use in electrolytic capacitors

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