JP2012500961A - 太陽光吸収装置のための層システム - Google Patents
太陽光吸収装置のための層システム Download PDFInfo
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 114
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000008151 electrolyte solution Substances 0.000 claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 15
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
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- 239000002184 metal Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
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- 229910052718 tin Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0525—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
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- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
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- F24S10/70—Solar heat collectors using working fluids the working fluids being conveyed through tubular absorbing conduits
- F24S10/75—Solar heat collectors using working fluids the working fluids being conveyed through tubular absorbing conduits with enlarged surfaces, e.g. with protrusions or corrugations
- F24S10/755—Solar heat collectors using working fluids the working fluids being conveyed through tubular absorbing conduits with enlarged surfaces, e.g. with protrusions or corrugations the conduits being otherwise bent, e.g. zig-zag
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
前記太陽電池層システムは、第1の層(10)と、該第1の層(10)に直接接触する第2の層(11)とを含み、
前記第2の層(11)は、前記太陽熱吸収装置(2)の上に直接的または間接的に平坦に堆積されている、
ことを特徴とする太陽光吸収装置。
Description
2 太陽熱吸収装置
3 太陽電池層システム
10 第1の層
11 第2の層
12 第3の層
13 第4の層/絶縁材料
15 切欠部/溝部
16 抵抗コンタクト
17 ショットキーダイオード
20 粒子
30 太陽熱コレクタ
40 熱流体システム
41 熱流体供給部
42 熱流体排出部
50 供給部(電解質溶液)
51 電解質溶液
52 排出部(電解質溶液)
53 センサ挿入スリーブ
55 ガラスカバー
56 断熱材料
57 背壁
58 フレーム
59 電線リードスルー
60 端封部
61 封止部
62 充填ガス
70 金属
71 高選択性のコーティング
72 石英ガラス
Claims (16)
- 少なくとも1つの太陽熱吸収装置(2)と、該太陽熱吸収装置の上に堆積された少なくとも1つの太陽電池層システム(3)とを含む太陽光吸収装置(1)において、
前記太陽電池層システムは、第1の層(10)と、該第1の層(10)に直接接触する第2の層(11)とを含み、
前記第2の層(11)は、前記太陽熱吸収装置(2)の上に直接的または間接的に平坦に堆積されている、
ことを特徴とする太陽光吸収装置。 - 前記太陽電池層システム(3)は、太陽光スペクトルの少なくとも一部分に対して、とりわけ太陽光スペクトルの赤および/または赤外部分に対して透過性である、
ことを特徴とする請求項1記載の太陽光吸収装置。 - 前記太陽電池層システム(3)の厚さは、1000nm以下、とりわけ750nm以下、有利には400nmと600nmの間、さらに有利には約500nmである、
ことを特徴とする請求項1または2記載の太陽光吸収装置。 - 前記太陽電池層システム(3)の前記第1の層(10)は、貴金属、とりわけパラジウムおよび/またはプラチナを含み、
前記第2の層(11)は、二酸化チタンを含む、
ことを特徴とする請求項1から3のいずれか一項記載の太陽光吸収装置。 - 前記第1の層(10)は、前記第2の層の所定の領域を露出させる切欠部(15)、とりわけ溝部(15)を有している、
ことを特徴とする請求項1から4のいずれか一項記載の太陽光吸収装置。 - 前記太陽電池層システム(3)は、とりわけチタン製の第3の層(12)を含み、
前記第3の層は、前記第2の層(11)のうち前記第1の層(10)とは反対の側にて、前記第2の層(11)に直接接触している、
ことを特徴とする請求項1から5のいずれか一項記載の太陽光吸収装置。 - 前記太陽電池層システム(3)は、第4の層(13)、とりわけ絶縁材料(13)を含み、
前記第4の層は、前記第2の層(11)のうち前記第1の層(10)とは反対の側にある第3の層(12)に直接接触している、
ことを特徴とする請求項1から6のいずれか一項記載の太陽光吸収装置。 - 前記第1の層(10)の厚さは、25nm以下、とりわけ18nm以下、有利には8nmと15nmの間、さらに有利には約13nmである、
ことを特徴とする請求項1から7のいずれか一項記載の太陽光吸収装置。 - 前記第2の層(11)の厚さは、650nm以下、有利には450nmと550nmの間、さらに有利には約500nmである、
ことを特徴とする請求項1から8のいずれか一項記載の太陽光吸収装置。 - 前記第2の層(11)は、多数の個々の粒子(20)を含み、
前記粒子の平均直径は、50nm以下、とりわけ35nm以下、有利には15nmと25nmの間、さらに有利には約20nmである、
ことを特徴とする請求項1から9のいずれか一項記載の太陽光吸収装置。 - 前記第3の層(12)の厚さは、5nmから25nmである、
ことを特徴とする請求項6から10のいずれか一項記載の太陽光吸収装置。 - 前記太陽熱吸収装置(2)は、互いに電気的に直列に接続された複数の太陽電池層システム(3)を有する、
ことを特徴とする請求項1から11のいずれか一項記載の太陽光吸収装置。 - 少なくとも1つの太陽熱吸収装置(2)と少なくとも1つの太陽電池層システム(3)とを備える、請求項1から12のいずれか一項記載の少なくとも1つの太陽光吸収装置(1)を含む太陽熱コレクタ。
- 前記太陽熱コレクタ(30)は、電解質溶液(51)、とりわけ水のための少なくとも1つの供給部(50)ならびにガスのための排出部(52)を有しており、
前記太陽電池層システム(3)は、光電気化学によるガス発生のために適当なものであり、
前記太陽熱吸収装置(2)は、太陽熱によるエネルギ獲得のためにも同時に適するように熱流体システムと結合されている、
ことを特徴とする請求項13記載の太陽熱コレクタ。 - 少なくとも1つの太陽熱吸収装置(2)と少なくとも1つの太陽電池層システム(3)とを備える、請求項1から12のいずれか一項記載の太陽光吸収装置(1)の製造方法において、少なくとも、
・太陽熱吸収装置(2)を準備するステップ、
・第2の層(11)を前記太陽熱吸収装置(2)の上に直接的または間接的に堆積させるステップ、
・前記第2の層(11)の上に第1の層(10)を直接堆積させるステップ
を含むことを特徴とする製造方法。 - 前記第1の層(10)および/または第2の層(11)を、ゲル被覆法によって、とりわけゾル・ゲル法、スプレー被覆法、浸漬被覆法、CVD法、PVD法、またはスパッタリング法によって堆積させる、
ことを特徴とする請求項15記載の製造方法。
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PCT/EP2009/061056 WO2010023240A2 (de) | 2008-08-29 | 2009-08-27 | Schichtsystem für solarabsorber |
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EP (1) | EP2316136A2 (ja) |
JP (1) | JP2012500961A (ja) |
KR (1) | KR20110083607A (ja) |
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WO2017172841A1 (en) | 2016-03-28 | 2017-10-05 | The Administrators Of The Tulane Educational Fund | Transmissive concentrated photovoltaic module with cooling system |
CA3058410A1 (en) | 2017-02-24 | 2018-08-30 | The Administrators Of The Tulane Educational Fund | Concentrated solar photovoltaic and photothermal system |
KR101978550B1 (ko) * | 2017-04-17 | 2019-08-28 | 고려대학교 산학협력단 | 유연 태양열 흡수체 및 이의 제조방법 |
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- 2009-08-27 KR KR1020117007148A patent/KR20110083607A/ko not_active Application Discontinuation
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US20110232723A1 (en) | 2011-09-29 |
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WO2010023240A3 (de) | 2010-07-15 |
CN102217097A (zh) | 2011-10-12 |
WO2010023240A2 (de) | 2010-03-04 |
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