JP2012250302A - Nano-bubble circulation type polishing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a variation of a thickness of a wafer after polishing by reducing the abrasion of a surface caused by the polishing.SOLUTION: This nano-bubble circulation type polishing device includes: a processing device including a fixation base and a box-type skeleton surrounding the fixation base to form a sealed space; a nano-bubble generation device for generating nano-bubbles in a solution; a high-speed water flow generation device for spraying the solution at high speed; a high-speed drain device for draining the solution in the processing device at high speed; an agitation part for stabilizing the drained solution; a first piping part for connecting the nano-bubble generation device to the high-speed water flow generation device; a second piping part for connecting the high-speed water flow generation device to the processing device; a third piping part for connecting the processing device to the high-speed drain device; a fourth piping part for connecting the high-speed drain device to the agitation part; a fifth piping part for connecting the agitation part to the nano-bubble generation device; and a spray nozzle arranged at an end of the second piping part on the processing device side; and is constituted so that the center axis of the second piping part and that of the third piping part are located on the same line, and the fixation base of the processing device is located in a spray range of the spray nozzle.

Description

  The present invention relates to a nanobubble circulating polishing apparatus that polishes a wafer to a predetermined thickness using nanobubbles.

Conventionally, a wafer is polished to a predetermined thickness using a so-called polishing apparatus.
Such a polishing apparatus employs a polishing method using an abrasive as a polishing method. In this polishing method using an abrasive, the rotating upper platen is set down while supplying slurry, which is a mixed liquid containing the polishing agent and water, to the vicinity of the front and back surfaces of the crystal piece placed on the rotating lower platen. By moving in the board direction, the front and back surfaces of the wafer are polished (see, for example, Patent Document 1).
A wafer polished to a predetermined thickness is used for manufacturing a crystal piece used for a crystal oscillator or a crystal resonator, for example, when the wafer is a crystal.

The slurry is used by mixing an abrasive and a dispersant.
For example, diamond, alumina, zirconium, silicon carbide, boron nitride, cerium oxide, manganese oxide, or silica-based (colloidal silica, fumed silica) material is used for the abrasive grains used in the abrasive.
As the dispersant, for example, various amines and glycols are used.
Examples of processing methods involving chemical reactions include bases (sodium hydroxide, potassium hydroxide), acids (hydrofluoric acid, hydrochloric acid, nitric acid, etc.), various metal salts (copper sulfate, potassium ferricyanide, etc.), chelating agents (glycine). , EDAT, etc.) and redox agents (hydrogen peroxide, chromic acid, oxalic acid, etc.) are used.
In addition, polishing using nanobubbles with an abrasive has also been proposed (see, for example, Patent Document 2 and Patent Document 3).

JP 2008-188678 A JP 2009-1111094 A JP 2008-171965 A

However, in the conventional polishing apparatus, the parts that come into contact with the solution, such as the upper surface plate and the lower surface plate, are made of metal, so the surface of the polishing device is worn away by the slurry used for polishing, and the wafer after polishing is polished. There was a risk that the thickness would be distorted.
In polishing using abrasive grains, a deteriorated layer is formed on the wafer depending on the grain size of the abrasive grains. When this deteriorated layer is present on the wafer, the wafer may be chipped or cracked. In addition, the abrasive grains used in the abrasive may be difficult to obtain due to resource depletion. For this reason, the wafer cannot be polished, and parts produced from the wafer may not be manufactured.

  Therefore, an object of the present invention is to provide a nanobubble circulation type polishing apparatus that solves the above-mentioned problems and that is not affected by resource depletion and that reduces surface abrasion due to polishing.

  The nanobubble circulation type polishing apparatus of the present invention is a processing comprising a fixed base fixed to an end of a rotating shaft and rotatably provided to fix a predetermined wafer, and a box-shaped casing surrounding the fixed base and forming a sealed space. An apparatus, a nanobubble generator for generating nanobubbles in a predetermined solution, a high-speed water flow generator for injecting a predetermined solution containing nanobubbles at a high speed, and a high-speed drain for discharging the predetermined solution in the processing apparatus at high speed An apparatus, a stirrer that stabilizes the flow state of the predetermined solution drained by the high-speed drainage device, a first piping unit that connects the nanobubble generator and the high-speed waterflow generator, and the high-speed waterflow generator. A second piping part that connects the processing device, a third piping part that connects the processing device and the high-speed drainage device, a fourth piping part that connects the high-speed drainage device and the stirring unit, A fifth piping section that connects the stirring section and the nanobubble generator; and an injection nozzle that is provided at an end of the second piping section on the processing apparatus side, the central axis of the second piping section and the The central axis of the third piping part is located on the same straight line, and the fixing base of the processing device is located within the injection range of the injection nozzle.

  The nanobubble circulation polishing apparatus of the present invention is characterized in that, in the fixing table of the processing apparatus, a fixing surface for fixing a predetermined wafer faces a bottom surface of the box-shaped casing.

  Further, the nanobubble circulation type polishing apparatus of the present invention includes the nanobubble generator, the high-speed water flow generator, the first piping unit, the processing device, the second piping unit, the high-speed drainage device, the third piping unit, The high-speed drainage device, the fourth piping portion, the fifth piping portion, and the injection nozzle are formed of a fluororesin.

  Further, the nanobubble circulation type polishing apparatus of the present invention includes the nanobubble generator, the high-speed water flow generator, the first piping unit, the processing device, the second piping unit, the high-speed drainage device, the third piping unit, One of fluororesin, polyvinyl chloride, and polyethylene is provided on the surface of the high-speed drainage device, the fourth piping portion, the fifth piping portion, and the spray nozzle that contacts the solution. To do.

Such a nanobubble circulation type polishing apparatus of the present invention can inject a predetermined solution containing nanobubbles generated by a nanobubble generator at a high speed onto a wafer fixed to a fixed base of a processing apparatus. The nanobubbles in the solution ejected in step 1 collide with the wafer, and the collision can cause a crack on the surface of the wafer. This crack can be in a state where the nanobubbles contained in the sprayed predetermined solution are continuously collided and spread and polished.
Thereby, since nanobubbles collide evenly with the wafer, it is possible to reduce thickness variations when the thickness of the wafer decreases.

  Moreover, the nanobubble circulation type polishing apparatus of the present invention includes a nanobubble generator, a high-speed water flow generator, a first piping unit, a processing device, a second piping unit, a high-speed draining device, a third piping unit, a high-speed draining device, and a fourth piping. Since the section, the fifth pipe section, and the injection nozzle are made of fluororesin, the apparatus has improved solution resistance, and it is possible to suppress a change in the injection amount of the predetermined solution to be injected. A given solution can be struck.

  Moreover, the nanobubble circulation type polishing apparatus of the present invention includes a nanobubble generator, a high-speed water flow generator, a first piping unit, a processing device, a second piping unit, a high-speed draining device, a third piping unit, a high-speed draining device, and a fourth piping. Since one of fluororesin, polyvinyl chloride, and polyethylene is provided on the surface where the solution of the section, the fifth piping section, and the spray nozzle comes into contact, the solution resistance is improved and the predetermined spray is performed. Since it is possible to suppress a change in the spray amount of the solution, a uniform predetermined solution can collide with the wafer.

  In addition, when the conventional polishing is performed, a deteriorated layer is formed on the wafer depending on the particle size of the polishing agent. However, according to the nanobubble circulation type polishing apparatus of the present invention, the polished material acting on the wafer, that is, nanobubbles Is much smaller than the particle size of conventional abrasives, the formation of a deteriorated layer on the wafer is reduced, and a high-quality wafer can be produced.

It is a conceptual diagram which shows an example of the nano bubble circulation type polishing apparatus which concerns on 1st embodiment of this invention. It is a conceptual diagram which shows an example which is in the state which grind | polished the wafer with the solution containing nanobubble. It is a conceptual diagram which shows an example of the state which the predetermined solution containing nanobubble collides with a wafer. It is a conceptual diagram which shows the state of a nano bubble and a wafer. It is a conceptual diagram which shows an example of the nano bubble circulation type polishing apparatus which concerns on 2nd embodiment of this invention.

  The best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. The wafer will be described as a quartz wafer using quartz. For the sake of clarity, the configuration of the invention is exaggerated.

(First embodiment)
As shown in FIG. 1, the nanobubble circulation polishing apparatus 100 according to the first embodiment of the present invention includes a nanobubble generator 10, a high-speed water flow generator 20, a processing device 30, a high-speed drain device 40, a stirring unit 50, It is mainly comprised from the 1 piping part 61, the 2nd piping part 62, the 3rd piping part 64, the 4th piping part 65, the 5th piping part 66, and the injection nozzle 63. FIG.

(Wafer)
The wafer will be described.
The wafer W is made of, for example, quartz and is formed in a disk shape (not shown). This wafer W is in a state in which a notch is provided in a direction orthogonal to a predetermined one of crystal axes of quartz composed of an X axis, a Y axis, and a Z axis.
The shape of the wafer W may be formed in a square plate shape.
The wafer W can be made of any one of Si, SiO ₂ , C (diamond), GaN, AlN, SiC, Cu, W, and ceramics.

(Nano bubble)
Next, the nanobubble NB is generated in any one solution (hereinafter referred to simply as “solution”) Y of a fluoride salt, a strong basic reagent, or a mixed solution of sodium hydroxide and sodium carbonate. The air bubbles are formed with a diameter of 0.1 μm or less. This nanobubble NB is generated in a predetermined gas atmosphere using a conventionally known nanobubble generator 21.
An aqueous potassium fluoride solution can be used as the fluoride salt, and a potassium hydroxide solution can be used as the strong basic reagent.
Here, the gas is described as air. However, in addition to air, any of O ₂ , O ₃ , N ₂ , CO ₂ , or a mixture thereof can be used as the gas.

  The nanobubble generator 10 plays a role of generating nanobubbles NB in a predetermined solution.

The nanobubble generator 10 uses a conventionally known nanobubble generator. Although not shown, the nanobubble generator 10 includes a microbubble generator that generates bubbles larger than nanobubbles and a bubble reduction device that converts the microbubbles into nanobubbles.
Here, generation of nanobubbles will be described.
There are mainly three types of methods for generating nanobubbles. First, the first method is a method of generating nanobubbles from the beginning with a microbubble generator. In this first method, nanobubbles are generated simultaneously with the generation of microbubbles by the microbubble generator. However, not many microbubbles are generated that are used in polishing.

Next, the second method is a method of generating nanobubbles by reducing the bubble size by the self-pressurizing effect of the microbubbles generated by the microbubble generator.
This is the same for nanobubbles, but microbubbles have a large surface area relative to the volume of the central gas, and are subjected to a large pressure from the surroundings, that is, the surface tension of the surrounding liquid phase generated at the microbubble interface. Therefore, the gas in the microbubble increases the solubility in the liquid as the pressure is applied (Henry's law). As a result, the microbubbles are dissolved in the surrounding liquid phase and the diameter of the microbubbles is reduced, and further, the pressure applied to the bubbles is further increased by reducing the diameter of the bubbles. The bubble diameter is reduced. Thus, the reduction of the bubble diameter causes a chain of an increase in the pressure in the bubble and an increase in the solubility of the gas in the bubble, a decrease in the number of moles of the gas in the bubble and a reduction in the bubble diameter. Therefore, as the bubbles become smaller, the bubble diameter reduction rate increases, and eventually the bubbles are completely dissolved in the solution and disappear.

However, when an electrolyte (NaCl, KF, KOH, Na ₂ CO _3, etc.) is present in the solution Y that generates microbubbles, it is attracted to OH ⁻ ions at the microbubble interface, and positively charged ions gather. While canceling the negative charge of OH ⁻ , the concentration of ions at the microbubble interface is increased, and as a result, dissolution of the gas is suppressed and the microbubbles are difficult to disappear. However, the reduction of microbubble diameter does not stop.

Such bubbles are further reduced in bubble diameter and become nano-sized, and as the bubble diameter rapidly decreases, the ion concentration rapidly increases and further attracts ions. At this stage, an electric field is formed by the charge of each layer of ions (the center is a negative charge of OH ^{− and} a positive charge around it), and the bubble is electrically stabilized. If an electric field is not formed, the ions will diffuse into the solution and the nanobubbles will not be stable. That is, a rapid reduction in bubble diameter and a rapid increase in ion concentration at the bubble interface are required for nanobubble generation. Also, due to the high concentration of ions, gas dissolution stops and bubble shrinkage stops. Thus, the nanobubble NB can exist stably due to the influence of ions in the solution Y. Moreover, the change from microbubbles to nanobubbles can be promoted by adjusting the concentration of the electrolyte.

Next, the third method is a method of further crushing microbubbles by an external stimulus in addition to the second method. In the above-described state, microbubbles are rapidly brought close to nanosize by an external stimulus, so that the concentration of ions at the bubble interface occurs rapidly, and as a result, many nanobubbles NB are generated.
Therefore, the present invention generates nanobubbles NB using this third method.

As a method for generating nanobubbles, for example, a pressure dissolution type or a two-layer flow swirl type can be used. The pressure-dissolving nanobubble generator supplies a solution and air to the nanobubble generator, dissolves the bubbled air in the solution while applying high pressure to the air in the nanobubble generator, By sending it into atmospheric pressure, supersaturated air is generated and used as nanobubbles. The two-layer flow swirl type nanobubble generator is used to generate nanobubbles by shearing air by applying a very strong water flow when delivering the taken-in solution and air.
Moreover, the part which stores the solution of the nanobubble generator 21 and the part which a solution contacts are formed with the fluororesin. Moreover, the whole is formed with the fluororesin except the drive system used for generating a nanobubble.

  The nanobubbles NB generated in this way have the property of continuing to float in the solution Y without disappearing in the solution Y. For example, the nanobubble NB can continue to exist in the solution Y for one day or more depending on predetermined conditions. The nanobubble NB is a bubble having a diameter of 0.1 μm or less. Therefore, the air inside the nanobubble NB is at a high pressure due to the surface tension of the surrounding liquid phase. Therefore, such nanobubble NB can be regarded as a rigid body whose shape is not deformed by a stress from the outside.

  In addition, the nanobubble NB is in a state where various ions in the solution Y (specifically described in the examples described later) are gathered at a high density at the interface between the air and the liquid inside, and high energy is obtained. It is thought to have. Therefore, it is considered that the reaction between the ions and the wafer W during polishing is increased, that is, the polishing efficiency is high.

Further, the nanobubble NB has a Brownian motion by itself because the diameter is 0.1 μm or less. By this Brownian motion, the nanobubbles NB are uniformly dispersed in the solution, so that the nanobubbles can be supplied uniformly to the polishing surface, and the wafer can be polished uniformly.
The Brownian motion means that the fine particles in the solvent move irregularly.

  Therefore, if the nanobubble NB is larger than 0.1 μm, the Brownian motion is difficult to occur, and the time that can exist in the solution Y is shortened, and the polishing efficiency of the wafer W is deteriorated.

  As shown in FIGS. 1 and 2, the nanobubble generator 10 is connected to the high-speed water flow generator 20 via the first piping part 61, and is connected to the high-speed water flow generator 20 via the first pipe part 61. Solution Y containing nanobubbles NB is supplied. In addition, these nanobubble generator 10 and the 1st piping part 61 are formed with the fluororesin.

As shown in FIG.1 and FIG.2, the high-speed water flow generator 20 plays the role which injects the predetermined solution Y containing the nanobubble NB at high speed. Here, an injection nozzle 63 is provided at the end of the second piping unit 62 on the processing device 30 side.
The high-speed water flow generator 20 is connected to the nanobubble generator 10 via a first pipe 61 and is connected to the processing apparatus 30 via a second pipe 62 provided with an injection nozzle 63 at the tip. The high-speed water flow generator 20 pressurizes a predetermined solution Y containing the nanobubbles NB supplied from the nanobubble generator 10 through the first pipe 61 to a high pressure state higher than the steady pressure, and passes through the second pipe 62. Thus, the predetermined solution Y is jetted from the jet nozzle 63 to the processing apparatus 30.
In addition, the 2nd piping part 62 is formed in the hollow shape, and makes the center of the length direction of this hollow inside a center axis line.

As shown in FIGS. 1 and 2, the processing apparatus 30 includes a fixed base 32 that is fixed to an end portion of a rotary shaft 31 and is rotatably provided to fix a predetermined wafer W, and surrounds the fixed base 32 to form a sealed space. It is mainly composed of a box-shaped housing 33 to be formed.
First, the box-shaped housing 33 is formed in a rectangular box shape and has a structure in which the inside can be sealed. Of the two side surfaces of the box-shaped casing 33 facing each other, the second piping portion 62 is provided on one side surface, and the third piping portion 64 is provided on the other side surface. Here, from the 2nd piping part 62, the injection nozzle 63 is the state protruded inside the box-type housing 33. FIG.
Moreover, the edge part of the 3rd piping part 64 provided in the side surface of the box-type housing 33 is formed, for example, diameter-expanding toward the inner side of the box-type housing 33. As shown in FIG.

In addition, the 3rd piping part 63 is formed in the hollow shape, and makes the center of the length direction of this hollow inside a center axis line.
Here, the second piping part 62 and the third piping part 63 connected to the box-shaped housing 33 are such that the central axis of the second piping part 62 and the central axis of the third piping part 63 are located on the same straight line. It is provided to do.

  In such a state, as shown in FIGS. 2 and 3, the injection nozzle 63 provided at the end of the second piping unit 62 on the processing device 30 side is connected to the processing device 30 of the third piping unit 64. A predetermined solution Y containing nanobubbles NB can be sprayed toward the end side.

The rotating shaft 31 is rotatably provided on the ceiling portion of the box-shaped housing 33 with the rotating shaft direction parallel to the vertical direction. Although not shown, the rotating shaft 31 can be rotated by a driving device.
The rotating shaft 31 has one end connected to the ceiling of the box-shaped housing 33 and a fixed base 32 provided at the other end.

The fixed base 32 is formed in a disk shape having a predetermined thickness, for example, and the plane center of one main surface of the disk is connected to the rotating shaft 31.
The fixing table 32 is used in a state in which the wafer W is fixed to the other main surface and rotated using, for example, an adhesive.

Further, as shown in FIG. 3, the fixed base 32 is located within the injection range of the injection nozzle 63.
Thereby, the predetermined solution Y containing the nanobubbles NB ejected from the ejection nozzle 63 can collide with the wafer W fixed to the fixed base 32 at high speed. As a result, the nanobubbles in the sprayed solution collide with the wafer, and the collision can cause a crack on the surface of the wafer. This crack can be in a state where the nanobubbles contained in the sprayed predetermined solution are continuously collided and spread and polished.

The high-speed drain device 40 plays a role of draining the predetermined solution Y in the processing device 30 at a high speed.
The third piping part 64 connects the processing device 30 and the high-speed drainage device 40.
The high-speed drainage device 40 sucks the predetermined solution Y containing the nanobubbles NB in a granular state filled in the processing device 30 using a pump, for example, and drains it to the stirring unit 50 via the third piping unit 64. .

As shown in FIGS. 1 and 2, the stirring unit 50 plays a role of stabilizing the flow state of the predetermined solution Y drained by the high-speed drain device 40. The fourth piping unit 65 connects the high-speed drain device 40 and the stirring unit 50.
The stirring unit 50 is connected to the nanobubble generator 10 and can supply the predetermined solution Y in the stirring unit 50 to the nanobubble generator 10 via the fifth piping unit 66.
The fifth piping part 66 connects the stirring part 50 and the nanobubble generator 10.
It is assumed that the predetermined solution Y drained from the high-speed drain device 40 via the fourth pipe portion 65 is under pressure and is in a turbulent state. Therefore, the stirring unit 50 can stably supply the predetermined solution Y to the nanobubble generator 10 even in a turbulent state.

Here, the nanobubble circulation type polishing apparatus 100 according to the first embodiment of the present invention includes a nanobubble generation apparatus 10, a high-speed water flow generation apparatus 20, a processing apparatus 30, a high-speed drainage apparatus 40, a stirring section 50, and a first piping section 61. The second piping portion 62, the third piping portion 64, the fourth piping portion 65, the fifth piping portion 66, and the injection nozzle 63 may be formed of a fluororesin.
Thus, nanobubble generator, high-speed water flow generator, first piping unit, processing device, second piping unit, high-speed drainage device, third piping unit, high-speed drainage device, fourth piping unit, fifth piping unit, injection By forming the nozzle with fluororesin, it becomes a device with improved solution resistance, and with the solution, for example, the thickness of each piping part and injection nozzle is reduced, reducing the change in the discharge rate of a predetermined solution Can be made. Thereby, since it is suppressed that the injection quantity of the predetermined solution to inject is changed, the uniform predetermined solution can collide with the wafer.

Next, the action of the nanobubble NB on the wafer W will be described.
As shown in FIGS. 3 and 4, the surface of the wafer W is denatured (hydrated layer) by the ions concentrated at the interface of the nanobubbles NB contained in the solution Y, and the pressure is applied from the nanobubbles that have received pressure from the jet. By being added, minute cracks WC are generated on the surface. Alternatively, the nanobubbles NB selectively act on the minute cracks WC generated on the surface of the wafer subjected to pressure from the nanobubbles, and are dissolved by ions densely gathered at the interface of the nanobubbles NB from the crack WC part.
Therefore, the nanobubble NB collides with the surface of the wafer W, and the altered portion of the wafer W in which the crack WC enters can be easily removed. That is, the ions around the nanobubbles NB and the wafer W react chemically, and then the nanobubbles NB crush the wafer W, so that polishing proceeds.

  In this way, the object to be polished is interspersed with any one solution Y of a fluoride salt, a strongly basic reagent, and a mixed solution of sodium hydroxide and sodium carbonate containing nanobubbles NB in which air is bubbled. By making the surface of the wafer W collide, the thickness of the wafer W is reduced. Such a collision can be caused by polishing the surface of the wafer.

(Second embodiment)
As shown in FIG. 5, the nanobubble circulation type polishing apparatus 101 according to the second embodiment of the present invention includes a nanobubble generation apparatus 10, a high-speed water flow generation apparatus 20, a processing apparatus 30, a high-speed drainage apparatus 40, a stirring unit 50, It is mainly composed of one piping section 61, second piping section 62, third piping section 64, fourth piping section 65, fifth piping section 66, and injection nozzle 63, and fluororesin 40 is provided on the surface of each component. It differs from the first embodiment in that it is provided.
In addition, the same code | symbol is attached | subjected to the same component and the overlapping description is abbreviate | omitted.
Each component of the nanobubble circulation type polishing apparatus 101 according to the second embodiment may be formed of a fluororesin or a metal.

The nanobubble generator 10 is provided with a fluororesin on the entire metal portion (not shown). The fluororesin can be provided by coating or laminating.
Similarly, the high-speed water flow generator 20 and the high-speed drain device 40 are also provided with a fluororesin on the surface with which the solution Y comes into contact.
In addition, fluororesin is provided on the surface where the solution Y of the first piping portion 61, the second piping portion 62, the third piping portion 64, the fourth piping portion 65, the fifth piping portion 66, and the injection nozzle 63 contacts. ing.
Further, a fluororesin is provided on the surface of the processing device 30 on which the solution Y of the rotary shaft 31, the fixed base 32, and the box-shaped housing 33 come into contact.

  Thus, because the nanobubble circulation type polishing apparatus according to the second embodiment of the present invention is configured, it becomes an apparatus with improved solution resistance, and it is possible to suppress a change in the injection amount of the predetermined solution to be injected. A uniform predetermined solution can collide with the wafer.

DESCRIPTION OF SYMBOLS 100 Nano bubble circulation type polishing apparatus 10 Nano bubble generation apparatus 20 High-speed water flow generation apparatus 30 Processing apparatus 31 Rotating shaft 32 Fixed base 33 Box-type housing 40 High-speed drainage apparatus 50 Stirring part 61 First piping part 62 Second piping part 63 Injection nozzle 64 First Three piping parts 65 Fourth piping part 66 Fourth piping part NB Nano bubble Y solution

Claims (4)

A processing device comprising a fixed base fixed to the end of the rotary shaft and rotatably provided to fix a predetermined wafer, and a box-shaped enclosure surrounding the fixed base to form a sealed space;
A nanobubble generator for generating nanobubbles in a predetermined solution;
A high-speed water flow generator for spraying a predetermined solution containing nanobubbles at high speed;
A high-speed drainage device for draining the predetermined solution in the processing device at a high speed;
A stirring section for stabilizing the flow state of the predetermined solution drained by the high-speed drain device;
A first piping section connecting the nanobubble generator and the high-speed water flow generator;
A second pipe connecting the high-speed water flow generator and the processing device;
A third piping part connecting the processing device and the high-speed drainage device;
A fourth piping part connecting the high-speed drainage device and the stirring part;
A fifth piping section connecting the stirring section and the nanobubble generator;
An injection nozzle provided at an end of the second piping part on the processing device side;
With
The central axis of the second piping part and the central axis of the third piping part are located on the same straight line,
The nanobubble circulation type polishing apparatus, wherein the fixed base of the processing apparatus is positioned within the spray range of the spray nozzle. In the fixed base of the processing apparatus,
The nanobubble circulation polishing apparatus according to claim 1, wherein a fixed surface for fixing a predetermined wafer is opposed to a bottom surface of the box-shaped casing.   The nanobubble generator, the high-speed water flow generator, the first pipe section, the processing apparatus, the second pipe section, the high-speed drain apparatus, the third pipe section, the high-speed drain apparatus, the fourth pipe section, the The nano bubble circulation type polishing apparatus according to claim 1 or 2, wherein the fifth piping section and the injection nozzle are formed of a fluororesin.   The nanobubble generator, the high-speed water flow generator, the first pipe section, the processing apparatus, the second pipe section, the high-speed drain apparatus, the third pipe section, the high-speed drain apparatus, the fourth pipe section, the 3. The nanobubble according to claim 1, wherein one of fluororesin, polyvinyl chloride, and polyethylene is provided on a surface of the fifth piping section and the spray nozzle that contacts the solution. Circulating polishing equipment.

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