JP2012248824A - Full-color image thin film solar cell and manufacturing method therefor - Google Patents
Full-color image thin film solar cell and manufacturing method therefor Download PDFInfo
- Publication number
- JP2012248824A JP2012248824A JP2012007961A JP2012007961A JP2012248824A JP 2012248824 A JP2012248824 A JP 2012248824A JP 2012007961 A JP2012007961 A JP 2012007961A JP 2012007961 A JP2012007961 A JP 2012007961A JP 2012248824 A JP2012248824 A JP 2012248824A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solar cell
- photoelectric conversion
- color image
- full
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 229920005989 resin Polymers 0.000 claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 30
- 238000004040 coloring Methods 0.000 claims abstract description 13
- 239000000049 pigment Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 10
- 229920005992 thermoplastic resin Polymers 0.000 claims description 6
- 229920001971 elastomer Polymers 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000007788 roughening Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 and the like Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
本発明は一種の薄膜太陽電池に係り、特にフルカラー画像薄膜太陽電池及びその製造方法に関する。 The present invention relates to a kind of thin film solar cell, and more particularly to a full color image thin film solar cell and a method for manufacturing the same.
近年、益々エネルギー資源が足らなくなる問題を解決し、並びにエネルギー資源が地球に対して発生する汚染問題を減らすため、グリーンエネルギーが積極的に開発、使用される中で、太陽電池はその設置地点に制限がなく、且つエネルギーソース取得が容易であり、このため積極的に発展させられている。そのうち、薄膜太陽電池は、その低コストと大量製造の特性を有することから、市場において急速に成長している。薄膜太陽電池は価格が低廉なガラス、プラスチック、セラミック、グラファイト、金属板等の異なる材料を基板として製造でき、電圧を生成可能な薄膜厚さは僅かに数ミクロンであり、且つ薄膜はフレキシブル基板に使用できることから、応用の自由度が高い。周知の薄膜太陽電池は、ガラスを基板として使用でき、並びに庇、遮光カバー、屋根、及びビルの窓等への使用がよく見受けられ、これにより、発電の効果を発生し、これにより大量の電気代を節約し、並びに有効に省エネと二酸化炭素削減の効果を達成する。 In recent years, as green energy has been actively developed and used in order to solve the problem of increasing energy resource shortage and to reduce the pollution problem that energy resource occurs to the earth, There is no limit and it is easy to obtain an energy source, which is why it is actively developed. Among them, thin film solar cells are growing rapidly in the market because of their low cost and mass production characteristics. Thin film solar cells can be manufactured using inexpensive materials such as glass, plastic, ceramic, graphite, and metal plate as substrates, and the thin film thickness that can generate voltage is only a few microns. Since it can be used, the degree of freedom of application is high. Known thin-film solar cells can use glass as a substrate, and are often used for fences, light-shielding covers, roofs, building windows, etc., thereby generating power generation effects, thereby producing large amounts of electricity. To save money, and effectively achieve the effects of energy saving and carbon dioxide reduction.
薄膜太陽電池の窓への応用の付加価値と室内採光性をアップするため、レーザーを利用して該太陽電池に対して溶融を実行してパターンを有する表示領域が形成される。これにより、該表示領域を利用して全体の窓の見た目と芸術価値をアップするほか、さらに表示領域はその他の領域に較べて高い光透過性を有するため、室内の採光度がアップする。ただし、一般にレーザーはコンピュータでビームのオンオフが制御されることで、薄膜太陽電池に対して溶融を実行して該表示領域を形成するが、これは解析度が不良となるのみならず、何度もレーザービームのオンオフを繰り返すことで、レーザーの損壊を形成しやすく、このためレーザーの使用寿命に影響が生じる。このほか、オンオフ方式で制御されるレーザーは、僅かに黒白パターンの表示しか形成できず、並びにグレースケールパターン表示の機能は達成できない。ゆえに、さらには薄膜太陽電池上にカラー表示パターンを形成できれば、その付加価値と使用意欲をアップすることができるであろう。総合すると、パターン表示の解析度をアップし、いかにカラーを表示するかは、薄膜太陽電池の改良の目標の一つである。 In order to increase the added value of the application to the window of the thin film solar cell and the indoor lighting, the display region having a pattern is formed by performing melting on the solar cell using a laser. As a result, the appearance and artistic value of the entire window are increased using the display area, and the display area has higher light transmittance than other areas, so that the indoor lighting is increased. However, in general, a laser is controlled by a computer to turn on and off the beam, so that the thin film solar cell is melted to form the display region. However, by repeatedly turning on and off the laser beam, it is easy to form damage to the laser, which affects the service life of the laser. In addition, the laser controlled by the on / off method can form only a black and white pattern display, and cannot achieve the function of displaying a gray scale pattern. Therefore, if a color display pattern can be formed on a thin film solar cell, the added value and willingness to use can be improved. Overall, one of the goals of improving thin film solar cells is how to improve the pattern display resolution and how to display colors.
本発明の主要な目的は、周知の技術の薄膜太陽電池がカラーでパターン表示できない問題を解決し、並びに周知の技術の薄膜太陽電池の表示パターン解析度が低い問題を解決し、及び、レーザーのオンオフで溶融を実行することでレーザー寿命が短縮される問題を解決することにある。 The main object of the present invention is to solve the problem that the thin film solar cell of the known technology cannot display the pattern in color, and to solve the problem that the display pattern resolution of the thin film solar cell of the known technology is low, and The object is to solve the problem of shortening the laser lifetime by performing melting on and off.
上述の目的を達成するため、本発明は一種のフルカラー画像薄膜太陽電池を提供し、それは、第１基板、該第１基板の表面に形成された光電変換膜、第２基板、及び該第２基板と該光電変換膜の間に設置された封止樹脂膜及びカラーパターン層を包含する。レーザーにパターンが形成されたマスクを組み合わせ、該光電変換膜に対して溶融を行ない該光電変換膜の表面に貫通領域を形成する。該カラーパターン層はカラー顔料を塗布し且つ該貫通領域に対応するように該第１基板と該第２基板の間に設置され、該第２基板は該封止樹脂膜を介して該第１基板と結合され、並びに光線照射の後に、該封止樹脂膜上のカラーパターン層は該貫通領域を通して現出させられる。 To achieve the above object, the present invention provides a kind of full-color image thin film solar cell, which includes a first substrate, a photoelectric conversion film formed on the surface of the first substrate, a second substrate, and the second substrate. It includes a sealing resin film and a color pattern layer disposed between the substrate and the photoelectric conversion film. A mask on which a pattern is formed is combined with a laser, and the photoelectric conversion film is melted to form a penetrating region on the surface of the photoelectric conversion film. The color pattern layer is applied between the first substrate and the second substrate so as to correspond to the penetrating region by applying a color pigment, and the second substrate is interposed between the first resin layer and the first resin layer through the sealing resin film. After being bonded to the substrate and after light irradiation, the color pattern layer on the sealing resin film is exposed through the through region.
このほか、本発明はフルカラー画像薄膜太陽電池の製作方法を提供し、それは、以下のステップ、すなわち、
Ｓ１：第１基板表面に光電変換膜を形成するステップ、
Ｓ２：該光電変換膜上にパターンが形成されたマスクを設置するステップ、
Ｓ３：光束を該マスクを通して該光電変換膜に照射して該光電変換膜を溶融させ並びに該光電変換膜に貫通領域を形成するステップ、
Ｓ４：第２基板と、該第１基板と該第２基板との間に設置する封止樹脂膜を製造するステップ、
Ｓ５：カラー顔料を利用して該第１基板と該第２基板の間の該貫通領域に対応する位置に色付けし、並びにカラーパターン層を形成するステップ、
Ｓ６：該封止樹脂膜を介して該第１基板と該第２基板を結合し、すなわち、該第１基板の該光電変換膜が接続された一面に、該封止樹脂膜を介して該第２基板と結合固定し、以上で太陽電池を形成するステップ、
以上を包含する。
In addition, the present invention provides a method for making a full color image thin film solar cell, which comprises the following steps:
S1: forming a photoelectric conversion film on the first substrate surface;
S2: installing a mask having a pattern formed on the photoelectric conversion film;
S3: irradiating the photoelectric conversion film with a light beam through the mask to melt the photoelectric conversion film and forming a penetration region in the photoelectric conversion film;
S4: producing a sealing resin film to be installed between the second substrate and the first substrate and the second substrate;
S5: coloring a position corresponding to the penetrating region between the first substrate and the second substrate using a color pigment, and forming a color pattern layer;
S6: The first substrate and the second substrate are bonded through the sealing resin film, that is, the one surface of the first substrate to which the photoelectric conversion film is connected is inserted through the sealing resin film. The step of bonding and fixing to the second substrate to form the solar cell as described above,
Including the above.
上述の説明から分かるように、本発明は以下の特徴を有している。
一．マスクに光束を組み合わせて光電変換膜を溶融させることで、周知の技術における、長期にわたり何度もレーザーのオンオフを繰り返すことでレーザー寿命が短縮されすぐに損壊してしまう問題を回避する。
二．マスクに光束を組み合わせて光電変換膜を溶融させることで、グレースケールパターン表示の目的を達成し、並びに解析度をアップできる。
三．カラーパターン層の形成を組み合わせ、貫通領域を組み合わせることで、薄膜太陽電池にカラー画像表示を行え、薄膜太陽電池の窓への応用の付加価値と芸術性をアップする。
As can be seen from the above description, the present invention has the following features.
one. By combining the light flux with the mask and melting the photoelectric conversion film, a problem in a known technique that the laser life is shortened by repeatedly turning the laser on and off over a long period of time is avoided.
two. By combining the light flux with the mask and melting the photoelectric conversion film, the purpose of gray scale pattern display can be achieved, and the degree of analysis can be improved.
three. By combining the formation of the color pattern layer and the penetrating region, a color image can be displayed on the thin film solar cell, and the added value and artistry of application to the window of the thin film solar cell are improved.
本発明の技術内容、構造特徴、達成する目的を詳細に説明するため、以下に実施例を挙げ並びに図面を組み合わせて説明する。 In order to describe in detail the technical contents, structural features, and objects to be achieved of the present invention, examples will be described below in combination with the drawings.
図１及び図２に示されるように、本発明は一種のフルカラー画像薄膜太陽電池の製造方法を提供し、それは以下のステップを包含する。 As shown in FIGS. 1 and 2, the present invention provides a method for manufacturing a kind of full-color image thin film solar cell, which includes the following steps.
Ｓ１：光電変換膜（２０）形成ステップ。このステップにおいて、第１基板（１０）の表面に光電変換膜（２０）を形成し、さらに説明すると、図２を特に参照されたいが、該光電変換膜（２０）は以下のステップにより完成する。 S1: Photoelectric conversion film (20) formation step. In this step, a photoelectric conversion film (20) is formed on the surface of the first substrate (10), and will be further described. With particular reference to FIG. 2, the photoelectric conversion film (20) is completed by the following steps. .
Ｓ１Ａ：表面粗化処理ステップ。このステップにおいて、第１基板（１０）の表面を粗化処理し、粗化表面を形成し、これにより光線反射の形成する損失を減らし、該第１基板（１０）の採光率を増す。
Ｓ１Ｂ：透明導電層（２１）形成ステップ。このステップにおいて、該粗化表面に該透明導電層（２１）を形成し、且つその材質は酸化インジウム錫或いは酸化亜鉛ガリウム等とする。
Ｓ１Ｃ：半導体層（２２）形成ステップ。このステップにおいて、該透明導電層（２１）の、該第１基板（１０）と反対の一側に該半導体層（２２）を形成し、該半導体層（２２）は、光線を吸収して電気エネルギーに変換するのに用いられ、該半導体層（２２）はＰＩＮ半導体とされ得て、光線の吸収と電気エネルギーへの変換を行える。
Ｓ１Ｄ：金属層（２３）形成ステップ。このステップにおいて、該半導体層（２２）の該透明導電層（２１）と反対の一側に該金属層（２３）を形成し、該金属層（２３）の材質は銀或いはアルミニウム等とされ、該金属層（２３）と該透明導電層（２１）は、該半導体層（２２）が変換した後の電気エネルギーの受け取りと伝導に用いられる。
S1A: Surface roughening treatment step. In this step, the surface of the first substrate (10) is roughened to form a roughened surface, thereby reducing the loss of light reflection and increasing the lighting rate of the first substrate (10).
S1B: Transparent conductive layer (21) formation step. In this step, the transparent conductive layer (21) is formed on the roughened surface, and the material thereof is indium tin oxide or zinc gallium oxide.
S1C: Semiconductor layer (22) formation step. In this step, the semiconductor layer (22) is formed on one side of the transparent conductive layer (21) opposite to the first substrate (10), and the semiconductor layer (22) absorbs light to electrically Used to convert to energy, the semiconductor layer (22) can be a PIN semiconductor that can absorb light and convert to electrical energy.
S1D: Metal layer (23) formation step. In this step, the metal layer (23) is formed on one side of the semiconductor layer (22) opposite to the transparent conductive layer (21), and the material of the metal layer (23) is silver or aluminum, The metal layer (23) and the transparent conductive layer (21) are used for receiving and conducting electric energy after the semiconductor layer (22) is converted.
続いて、図３に示されるように、ステップＳ１の完成の後、ステップＳ２が実行される。すなわち、
Ｓ２：マスク（３０）設置ステップ。このステップにおいて、該光電変換膜（２０）上にパターンが形成されたマスク（３０）を設置する。
Subsequently, as shown in FIG. 3, after completion of step S1, step S2 is executed. That is,
S2: Mask (30) installation step. In this step, a mask (30) on which a pattern is formed is placed on the photoelectric conversion film (20).
図４を参照されたい。続いてステップＳ３が実行される。すなわち、
Ｓ３：貫通領域（２４）の形成ステップ。このステップにおいて、レーザービーム（４０）或いはその他の破壊性を有する光束を該マスク（３０）を通して該光電変換膜（２０）に照射して該光電変換膜（２０）を溶融させ、並びに該光電変換膜（２０）上に該貫通領域（２４）を形成する。説明が必要であることは、該マスク（３０）の阻止により、レーザービーム（４０）はただ逐一該マスク（３０）をスウィープするだけでよく、該マスク（３０）上のグレースケールパターン設計により、該マスク（３０）を透過した後のレーザービーム（４０）の強度を制御でき、これによりグレースケールパターンを有する表示を達成する。このほか、パターン表示の形状の違いに合わせて、溶融させられる面積も異なり、実験により分かったことは、レーザービーム（４０）で該光電変換膜（２０）の面積の約２０％を溶融させると、明らかな透光と光照明の効果を達成でき、溶融前に較べると、本発明はもとの変換効率の９０％以上を維持できる。ただし、溶融前に較べると、室内全体の光照度は明らかにアップする。
Please refer to FIG. Subsequently, step S3 is executed. That is,
S3: Step of forming the through region (24). In this step, the photoelectric conversion film (20) is irradiated with a laser beam (40) or other destructive light flux through the mask (30) to melt the photoelectric conversion film (20), and the photoelectric conversion The through region (24) is formed on the membrane (20). What needs to be explained is that by blocking the mask (30), the laser beam (40) only needs to sweep the mask (30) one by one, and by the grayscale pattern design on the mask (30), The intensity of the laser beam (40) after passing through the mask (30) can be controlled, thereby achieving a display having a gray scale pattern. In addition, the area to be melted differs according to the difference in pattern display shape, and it has been found from experiments that about 20% of the area of the photoelectric conversion film (20) is melted by the laser beam (40). The effect of clear light transmission and light illumination can be achieved, and the present invention can maintain 90% or more of the original conversion efficiency as compared with before melting. However, the light intensity of the entire room is clearly increased compared to before melting.
Ｓ４：第２基板（５０）と封止樹脂膜（６０）を製造するステップ。このステップにおいて、該封止樹脂膜（６０）は該第１基板（１０）と該第２基板（５０）の間に設置され、その材質は弾性ゴム或いは熱可塑性樹脂とされ、弾性ゴムはたとえば、エチレン−酢酸ビニル共重合体、流し込みポリウレタン樹脂、シリコーン樹脂等とされ、熱可塑性樹脂は、たとえば熱可塑性ポリウレタン樹脂（Ｔｈｅｒｍｏｐｌａｓｔｉｃ ｐｏｌｙｕｒｅｔｈａｎｅ，ＴＰＵ）、ポリ塩化ビニル、酸変性ポリオレフィン等とされる。 S4: A step of manufacturing the second substrate (50) and the sealing resin film (60). In this step, the sealing resin film (60) is placed between the first substrate (10) and the second substrate (50), and the material thereof is an elastic rubber or a thermoplastic resin. , Ethylene-vinyl acetate copolymer, cast polyurethane resin, silicone resin, and the like, and thermoplastic resin such as thermoplastic polyurethane resin (TPU), polyvinyl chloride, acid-modified polyolefin, and the like.
Ｓ５：色付けステップ。このステップにおいて、カラー顔料を利用して該第１基板（１０）と該第２基板（５０）の間の該貫通領域（２４）に対応する位置に色付けし、並びにカラーパターン層（７０）を形成する。本実施例では、該カラー顔料は、該貫通領域（２４）に対応する位置において、該封止樹脂膜（６０）に対して色付けして、カラーパターン層（７０）を形成する。このほか、図５に示されるように、色付けの位置は、封止樹脂膜（６０）の表面に限定されるわけではなく、該カラー顔料で直接貫通領域（２４）を有する該光電変換膜（２０）の表面に色付けしてもよい。このほか、図６に示されるように、該カラー顔料で、該第２基板（５０）に色付けしてもよい。該カラー顔料は、印刷、インクジェット、レーザー或いは手作業による色付けの方式で、該光電変換膜（２０）或いは該封止樹脂膜（６０）に対して色付けされ、該カラーパターン層（７０）が形成される。 S5: Coloring step. In this step, a color pigment is used to color a position corresponding to the through region (24) between the first substrate (10) and the second substrate (50), and a color pattern layer (70) is provided. Form. In this embodiment, the color pigment is colored with respect to the sealing resin film (60) at a position corresponding to the penetrating region (24) to form a color pattern layer (70). In addition, as shown in FIG. 5, the coloring position is not limited to the surface of the sealing resin film (60), but the photoelectric conversion film ( The surface of 20) may be colored. In addition, as shown in FIG. 6, the second substrate (50) may be colored with the color pigment. The color pigment is colored on the photoelectric conversion film (20) or the sealing resin film (60) by printing, ink-jet, laser, or manual coloring method to form the color pattern layer (70). Is done.
Ｓ６：結合ステップ。このステップにおいて、該封止樹脂膜（６０）を介して該第１基板（１０）と該第２基板（５０）を結合する。すなわち、該第１基板（１０）の該光電変換膜（２０）が接続された一面を、該封止樹脂膜（６０）を介して該第２基板（５０）と結合固定し、以上で太陽電池を形成する。 S6: Joining step. In this step, the first substrate (10) and the second substrate (50) are bonded via the sealing resin film (60). That is, one surface of the first substrate (10) to which the photoelectric conversion film (20) is connected is bonded and fixed to the second substrate (50) through the sealing resin film (60). Form a battery.
本発明はさらに一種のフルカラー画像薄膜太陽電池を開示し、それは、第１基板（１０）、該第１基板（１０）の表面に形成された光電変換膜（２０）、第２基板（５０）及び該第２基板（５０）と該光電変換膜（２０）の間に設置された封止樹脂膜（６０）とカラーパターン層（７０）を包含する。該光電変換膜（２０）は該第１基板（１０）と接続された透明導電層（２１）、金属層（２３）及び該透明導電層（２１）と該金属層（２３）の間に形成された半導体層（２２）を包含する。該封止樹脂膜（６０）は弾性ゴム或いは熱可塑性樹脂とされる。該弾性ゴムは、エチレン−酢酸ビニル共重合体、流し込みポリウレタン樹脂、シリコーン樹脂等とされ、熱可塑性樹脂は、たとえば熱可塑性ポリウレタン樹脂（Ｔｈｅｒｍｏｐｌａｓｔｉｃ ｐｏｌｙｕｒｅｔｈａｎｅ，ＴＰＵ）、ポリ塩化ビニル、酸変性ポリオレフィン等とされる。 The present invention further discloses a kind of full-color image thin film solar cell, which includes a first substrate (10), a photoelectric conversion film (20) formed on the surface of the first substrate (10), and a second substrate (50). And a sealing resin film (60) and a color pattern layer (70) disposed between the second substrate (50) and the photoelectric conversion film (20). The photoelectric conversion film (20) is formed between the transparent conductive layer (21) connected to the first substrate (10), the metal layer (23), and the transparent conductive layer (21) and the metal layer (23). A patterned semiconductor layer (22). The sealing resin film (60) is made of elastic rubber or thermoplastic resin. The elastic rubber is an ethylene-vinyl acetate copolymer, a cast polyurethane resin, a silicone resin, or the like, and the thermoplastic resin is, for example, a thermoplastic polyurethane resin (TPU), polyvinyl chloride, an acid-modified polyolefin, or the like. The
レーザービーム（４０）をパターンを形成したマスク（３０）に組み合わせて該光電変換膜（２０）に照射して溶融させ、該光電変換膜（２０）の表面に貫通領域（２４）を形成する。特に説明すべきことは、該カラーパターン層（７０）は、カラー顔料で色付けしてなり且つ該貫通領域（２４）に対応して該第１基板（１０）と該第２基板（５０）の間に設置され、図４に示されるようであり、該カラーパターン層（７０）は、印刷、インクジェット、レーザー、或いは手作業による色付けの方式で該封止樹脂膜（６０）の表面に形成される。このほか、また、図５に示されるように、該カラー顔料を利用して該光電変換膜（２０）に対して色付けして、該カラーパターン層（７０）を形成してもよい。また、図６の第３の実施例のように、該第２基板（５０）に対して色付けして該カラーパターン層（７０）を形成してもよい。該第２基板（５０）は該封止樹脂膜（６０）を介して該第１基板（１０）に結合され、並びに光線（８０）の照射後、該封止樹脂膜（６０）上のカラーパターン層（７０）は、該貫通領域（２４）を通して現出される。 A laser beam (40) is combined with a patterned mask (30) to irradiate and melt the photoelectric conversion film (20) to form a penetrating region (24) on the surface of the photoelectric conversion film (20). It should be particularly explained that the color pattern layer (70) is colored with a color pigment and corresponds to the through region (24) and is formed on the first substrate (10) and the second substrate (50). As shown in FIG. 4, the color pattern layer (70) is formed on the surface of the sealing resin film (60) by printing, inkjet, laser, or manual coloring method. The In addition, as shown in FIG. 5, the color conversion layer (70) may be formed by coloring the photoelectric conversion film (20) using the color pigment. Further, as in the third embodiment of FIG. 6, the color pattern layer (70) may be formed by coloring the second substrate (50). The second substrate (50) is bonded to the first substrate (10) through the sealing resin film (60), and after irradiation with light rays (80), the color on the sealing resin film (60). The pattern layer (70) is exposed through the through region (24).
総合すると、周知技術と比較して、本発明は以下のような特徴を有している。
一．マスク（３０）にレーザービーム（４０）を組み合わせて光電変換膜（２０）を溶融させることで、周知の技術における、長期にわたり何度もレーザーのオンオフを繰り返すことでレーザー寿命が短縮されすぐに損壊してしまう問題を回避する。
二．マスク（３０）に光束を組み合わせて溶融させることで、グレースケールパターン表示の目的を達成し、並びに解析度をアップできる。
三．カラーパターン層（７０）により、並びに貫通領域（２４）が組み合わされることで、薄膜太陽電池にカラー画像表示を行わせられ、薄膜太陽電池の窓への応用の付加価値と芸術性をアップする。
四．簡単な印刷或いはインクジェットの方式でカラーパターン表示の目的を達成でき、その製造工程は簡易であり、製造に便利で、コストが低い長所を有し、これにより大量製造に適用可能である。
In summary, the present invention has the following characteristics as compared with known techniques.
one. By combining the laser beam (40) with the mask (30) and melting the photoelectric conversion film (20), the laser life is shortened by repeating the laser on and off over a long period of time in a well-known technique, and it is immediately damaged. To avoid the problem.
two. By combining and melting the luminous flux on the mask (30), the purpose of gray scale pattern display can be achieved, and the degree of analysis can be improved.
three. The color pattern layer (70) and the penetrating region (24) are combined to allow the thin film solar cell to display a color image, thereby enhancing the added value and artistry of application to the thin film solar cell window.
Four. The purpose of color pattern display can be achieved by a simple printing or ink jet method, and the manufacturing process is simple, convenient for manufacturing, and has the advantages of low cost, and can be applied to mass production.
（１０）第１基板
（２０）光電変換膜
（２１）透明導電層
（２２）半導体層
（２３）金属層
（２４）貫通領域
（３０）マスク
（４０）レーザービーム
（５０）第２基板
（６０）封止樹脂膜
（７０）カラーパターン層
（８０）光線
(10) first substrate (20) photoelectric conversion film (21) transparent conductive layer (22) semiconductor layer (23) metal layer (24) penetrating region (30) mask (40) laser beam (50) second substrate (60) ) Sealing resin film (70) Color pattern layer (80) Light beam
Claims (9)
第１基板（１０）、
該第１基板（１０）の表面に形成された光電変換膜（２０）であって、レーザーにパターンを形成したマスク（３０）を組み合わせて該光電変換膜（２０）に対して溶融が実行されて該光電変換膜（２０）の表面に貫通領域（２４）が形成された上記光電変換膜（２０）、
第２基板（５０）であって、該光電変換膜（２０）の該第１基板（１０）と反対の一側に設置された上記第２基板（５０）、
該第２基板（５０）と該光電変換膜（２０）の間に設置された封止樹脂膜（６０）であって、該封止樹脂膜（６０）により該光電変換膜（２０）が設置された該第１基板（１０）と該第２基板（５０）が結合される上記封止樹脂膜（６０）、
カラーパターン層（７０）であって、該第１基板（１０）と該第２基板（５０）の間に設置され、並びに該貫通領域（２４）の位置と形状に対応する上記カラーパターン層（７０）、
以上を包含することを特徴とする、フルカラー画像薄膜太陽電池。 In full-color image thin film solar cells,
A first substrate (10),
A photoelectric conversion film (20) formed on the surface of the first substrate (10), wherein a mask (30) in which a pattern is formed on a laser is combined to melt the photoelectric conversion film (20). The photoelectric conversion film (20) having a penetrating region (24) formed on the surface of the photoelectric conversion film (20),
A second substrate (50), the second substrate (50) installed on one side of the photoelectric conversion film (20) opposite to the first substrate (10);
A sealing resin film (60) disposed between the second substrate (50) and the photoelectric conversion film (20), wherein the photoelectric conversion film (20) is disposed by the sealing resin film (60). The sealing resin film (60) to which the first substrate (10) and the second substrate (50) are bonded,
A color pattern layer (70), which is disposed between the first substrate (10) and the second substrate (50), and corresponds to the position and shape of the penetrating region (24) ( 70),
The full color image thin film solar cell characterized by including the above.
Ｓ１：第１基板（１０）の表面に光電変換膜（２０）を形成するステップ、
Ｓ２：該光電変換膜（２０）上にパターンが形成されたマスク（３０）を設置するステップ、
Ｓ３：光束を該マスク（３０）を組み合わせて該光電変換膜（２０）に照射して該光電変換膜（２０）を溶融させ並びに該光電変換膜（２０）に貫通領域（２４）を形成するステップ、
Ｓ４：第２基板（５０）と、該第１基板（１０）と該第２基板（５０）との間に設置する封止樹脂膜（６０）を製造するステップ、
Ｓ５：カラー顔料を利用して該第１基板（１０）と該第２基板（５０）の間の該貫通領域（２４）に対応する位置に色付けしてカラーパターン層（７０）を形成するステップ、 Ｓ６：該封止樹脂膜（６０）を介して該第１基板（１０）と該第２基板（５０）を結合し、すなわち、該第１基板（１０）の該光電変換膜（２０）が設けられた一面に、該封止樹脂膜（６０）を介して該第２基板（５０）を結合固定し、以上で太陽電池を形成するステップ、
以上を包含することを特徴とする、フルカラー画像薄膜太陽電池の製造方法。 In the method for producing a full color image thin film solar cell,
S1: forming a photoelectric conversion film (20) on the surface of the first substrate (10);
S2: installing a mask (30) having a pattern formed on the photoelectric conversion film (20);
S3: Combine the mask (30) with the light beam and irradiate the photoelectric conversion film (20) to melt the photoelectric conversion film (20) and form a through region (24) in the photoelectric conversion film (20). Step,
S4: producing a second substrate (50) and a sealing resin film (60) to be installed between the first substrate (10) and the second substrate (50);
S5: forming a color pattern layer (70) by coloring a position corresponding to the through region (24) between the first substrate (10) and the second substrate (50) using a color pigment. S6: The first substrate (10) and the second substrate (50) are bonded through the sealing resin film (60), that is, the photoelectric conversion film (20) of the first substrate (10). The second substrate (50) is bonded and fixed to the one surface provided with the sealing resin film (60), and a solar cell is formed as described above.
The manufacturing method of the full-color image thin film solar cell characterized by including the above.
Ｓ１Ａ：該第１基板（１０）の表面を粗化処理し、粗化表面を形成するステップ、
Ｓ１Ｂ：該粗化表面に透明導電層（２１）を形成するステップ、
Ｓ１Ｃ：該透明導電層（２１）の、該第１基板（１０）と反対の一側に、光線を吸収して電気エネルギーに変換するための半導体層（２２）を形成するステップ、
Ｓ１Ｄ：該半導体層（２２）の該透明導電層（２１）と反対の一側に、該半導体層（２２）が変換した後の電気エネルギーの受け取りと伝導のために金属層（２３）を形成するステップ、
を包含することを特徴とする、フルカラー画像薄膜太陽電池の製造方法。 6. The method of manufacturing a full color image thin film solar cell according to claim 5, wherein step S1 further comprises:
S1A: roughening the surface of the first substrate (10) to form a roughened surface;
S1B: forming a transparent conductive layer (21) on the roughened surface;
S1C: forming a semiconductor layer (22) for absorbing light and converting it into electrical energy on one side of the transparent conductive layer (21) opposite to the first substrate (10);
S1D: A metal layer (23) is formed on one side of the semiconductor layer (22) opposite to the transparent conductive layer (21) for receiving and conducting electric energy after the semiconductor layer (22) is converted. Step to do,
A method for producing a full-color image thin-film solar cell.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100118452 | 2011-05-26 | ||
| TW100118452A TW201248888A (en) | 2011-05-26 | 2011-05-26 | Full color picture thin-film solar cell and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012248824A true JP2012248824A (en) | 2012-12-13 |
| JP5372184B2 JP5372184B2 (en) | 2013-12-18 |
Family
ID=47140542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012007961A Expired - Fee Related JP5372184B2 (en) | 2011-05-26 | 2012-01-18 | Full-color image thin film solar cell and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5372184B2 (en) |
| KR (1) | KR101485490B1 (en) |
| DE (1) | DE102012101073A1 (en) |
| TW (1) | TW201248888A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019021893A (en) * | 2017-07-19 | 2019-02-07 | 海力雅集成股▲分▼有限公司 | Solar module |
| CN117080302A (en) * | 2023-08-21 | 2023-11-17 | 新源劲吾(北京)科技有限公司 | Preparation method of full-color photovoltaic module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201301537A (en) * | 2011-06-23 | 2013-01-01 | Life Renewable Energy Co Ltd | Thin film solar cell with hologram |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168357A (en) * | 1999-12-08 | 2001-06-22 | Sharp Corp | Thin-film solar battery module and method of manufacturing the same |
| JP2001326373A (en) * | 2000-05-15 | 2001-11-22 | Sharp Corp | Solar battery module |
| JP2002319694A (en) * | 2001-04-20 | 2002-10-31 | Sharp Corp | Solar battery module having light-gathering laminated glass structure and solar battery module having light gathering type double-layered structure |
| JP2002343998A (en) * | 2001-05-21 | 2002-11-29 | Sharp Corp | Thin-film solar cell module and panel thereof |
| US20090133739A1 (en) * | 2007-11-07 | 2009-05-28 | Ming-Liang Shiao | Photovoltaic Roofing Elements and Roofs Using Them |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007287894A (en) * | 2006-04-17 | 2007-11-01 | Showa Shell Sekiyu Kk | Cis thin-film solar module with pattern display function, and its manufacturing method |
| KR100951778B1 (en) * | 2008-05-28 | 2010-04-08 | 연세대학교 산학협력단 | Method for patterning thin film by laser printing |
-
2011
- 2011-05-26 TW TW100118452A patent/TW201248888A/en not_active IP Right Cessation
-
2012
- 2012-01-18 JP JP2012007961A patent/JP5372184B2/en not_active Expired - Fee Related
- 2012-02-09 DE DE102012101073A patent/DE102012101073A1/en not_active Withdrawn
- 2012-02-16 KR KR20120015921A patent/KR101485490B1/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168357A (en) * | 1999-12-08 | 2001-06-22 | Sharp Corp | Thin-film solar battery module and method of manufacturing the same |
| JP2001326373A (en) * | 2000-05-15 | 2001-11-22 | Sharp Corp | Solar battery module |
| JP2002319694A (en) * | 2001-04-20 | 2002-10-31 | Sharp Corp | Solar battery module having light-gathering laminated glass structure and solar battery module having light gathering type double-layered structure |
| JP2002343998A (en) * | 2001-05-21 | 2002-11-29 | Sharp Corp | Thin-film solar cell module and panel thereof |
| US20090133739A1 (en) * | 2007-11-07 | 2009-05-28 | Ming-Liang Shiao | Photovoltaic Roofing Elements and Roofs Using Them |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019021893A (en) * | 2017-07-19 | 2019-02-07 | 海力雅集成股▲分▼有限公司 | Solar module |
| CN117080302A (en) * | 2023-08-21 | 2023-11-17 | 新源劲吾(北京)科技有限公司 | Preparation method of full-color photovoltaic module |
| CN117080302B (en) * | 2023-08-21 | 2024-01-16 | 新源劲吾(北京)科技有限公司 | Preparation method of full-color photovoltaic module |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201248888A (en) | 2012-12-01 |
| KR101485490B1 (en) | 2015-01-26 |
| KR20120132309A (en) | 2012-12-05 |
| DE102012101073A1 (en) | 2012-11-29 |
| JP5372184B2 (en) | 2013-12-18 |
| TWI445191B (en) | 2014-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2018129688A1 (en) | Color solar energy module and fabrication method therefor | |
| CN205406538U (en) | Dual -glass photovoltaic assembly | |
| JP2008085128A (en) | Cis based thin film solar cell module and its manufacturing method | |
| CN212323009U (en) | Colored photovoltaic module and photovoltaic system | |
| AU2018101583A4 (en) | Solar cell module | |
| JP5372184B2 (en) | Full-color image thin film solar cell and manufacturing method thereof | |
| CN111164765A (en) | Photovoltaic module | |
| TWI587533B (en) | Colorful solar power module and manufacturing method thereof | |
| TW201225319A (en) | Package structure of solar photovoltaic module and method of manufacturing the same | |
| CN201994317U (en) | Arc crystalline silicon dual-glass photovoltaic component | |
| CN206115111U (en) | Novel coated glass discolours | |
| WO2009038091A1 (en) | Solar battery manufacturing method | |
| CN112331640A (en) | Display equipment capable of generating power and manufacturing method thereof | |
| CN202949381U (en) | Photovoltaic cell device for photovoltaic solar building integration | |
| WO2014180019A1 (en) | Solar module | |
| CN105978444A (en) | Building material type photovoltaic component with characteristic of light modulation and photovoltaic system | |
| CN107154443A (en) | A kind of solar cell module encapsulating structure | |
| CN102097035B (en) | Display module as well as solar cell, electronic book and outdoor billboard employing same | |
| CN109118974A (en) | Photovoltaic shows that curtain wall component and photovoltaic show curtain wall system | |
| TWM556910U (en) | Coloured solar power module with glassless 3D graph thereof | |
| CN205985023U (en) | Photovoltaic assembly | |
| TWM556970U (en) | Chromatic solar power module | |
| TW201804724A (en) | Glassless 3D graphed coloured solar power module and manufacturing method thereof | |
| CN203377239U (en) | Welding strip for crystalline silica solar battery | |
| KR101062700B1 (en) | Dye-sensitized solar cell module with double protection of grid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130415 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130423 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130722 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130827 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130917 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5372184 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |