CN202949381U - Photovoltaic cell device for photovoltaic solar building integration - Google Patents
Photovoltaic cell device for photovoltaic solar building integration Download PDFInfo
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- CN202949381U CN202949381U CN2012205122834U CN201220512283U CN202949381U CN 202949381 U CN202949381 U CN 202949381U CN 2012205122834 U CN2012205122834 U CN 2012205122834U CN 201220512283 U CN201220512283 U CN 201220512283U CN 202949381 U CN202949381 U CN 202949381U
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- dssc
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a photovoltaic cell device for photovoltaic solar building integration. The photovoltaic cell device is formed by splicing dye sensitized solar cells, and crystalline silica/film solar cells in a serial-connection way, or in a parallel-connection way or in a way combining serial connection and parallel connection. The photovoltaic cell device is then formed to have a layered structure which can be arranged on a building. By combining the dye sensitized solar cells, the silicon solar cells or the film solar cells and making full use of their respective characteristics, the photovoltaic cell device which is formed by the above-mentioned cells can achieve advantages of rice colors and patterns, high light transmittance and higher photoelectric conversion efficiency. The photovoltaic cell device is especially suitable for photovoltaic solar building integration.
Description
Technical field
The utility model belongs to regenerative resource and building material field, more specifically, relate to a kind of effectively combination dye sensitization solar battery and crystal silicon solar/thin-film solar cells crystal silicon solar energy battery characteristics separately, and be particularly useful for the film photovoltaic cell device of photovoltaic solar architecture-integral.
Background technology
Photovoltaic solar architecture-integral (BIPV) technology is at present solar energy to be used in one of architectural effective means, be that photovoltaic cell is no longer only as the additional product in building structure, and be mounted on peripheral structures such as roof, curtain wall, door glass, wall and combine with it, thus in as construction material and ornament materials, can also effectively absorb solar energy and be converted into electric energy, thus guarantee building self electricity consumption and to mains supply to alleviate the peak power demand.Data show, state-owned 48,000,000,000 square metres of construction areas at present, if to wherein 10% adopt the BIPV system, the exclusive market of solar energy of 500GW will be consisted of, this will greatly promote the demand for development of thin film solar technology, make simultaneously the substance that the product such as film glass curtain wall is marched toward more wide at home use.
In existing BIPV technology, use at present maximum with the non-crystalline silicon solar cell as photovoltaic solar architecture-integral material, for example, a kind of amorphous silicon photovoltaic building integration product is disclosed in CN201043332Y, wherein adopt the amorphous silicon semiconductor material to make the non-crystal silicon solar cell sheet, this cell piece and glass bonding are closed, consist of thus internal layer and be white clear glass, middle level and be the non-crystal silicon solar cell sheet, outer between glass and inside and outside two-layer and middle level with the bonding amorphous silicon photoelectric that forms of casting film resin thermosetting.Yet non-crystal silicon solar cell certainly exists the shortcomings such as the battery light transmittance is low, color is dull as the BIPV material; In addition, the manufacturing cost of non-crystal silicon solar cell is high, complex process, and these factors have all hindered the application and development of this technology in the photovoltaic solar architecture-integral.
Dye-sensitized cell is (wherein for example the most representative
Battery) be the novel solar battery of developing by simulating nature circle photosynthesis principle, its major advantage is abundant raw material, cost is low, process for machining and manufacturing is relatively simple.The DSSC distinguishing feature is that the transparency and color are adjustable, can be electric energy with the visible light transformation from all angles incident, therefore is applicable to the application scenario of various different illumination conditions.A kind of optoelectronic integration building based on DSSC is disclosed in CN101509306A, wherein the nano crystal semiconductor slurry directly is coated to for building with making semiconductive thin film on electrically-conductive backing plate, absorbing dye, make semiconductor optical anode afterwards; Then bonding to electrode, inject electrolyte and solidify the bonding product that makes thus.Yet this product fails to take full advantage of the characteristics of DSSC, and the whole electricity conversion of product is limited, has limited its application as photoelectric integration construction material.
The utility model content
Defective and technical need for prior art, the purpose of this utility model is to provide a kind of film photovoltaic cell device for the photovoltaic solar architecture-integral, it combines DSSC and crystal silicon solar/thin-film solar cells and takes full advantage of their characteristics separately, correspondingly obtain that colour image is abundant, light transmission rate is adjustable, the film photovoltaic cell device that photoelectric conversion efficiency is higher is particularly useful for the purposes of photovoltaic solar architecture-integral.
The utility model provides a kind of film photovoltaic cell device for the photovoltaic solar architecture-integral, it is characterized in that, this film photovoltaic cell device is spliced by the mode that series, parallel or connection in series-parallel combine with crystal silicon solar energy battery or thin-film solar cells by DSSC, and forms the layer structure that can be mounted to building.
As further preferably, described DSSC is individual layer or laminated construction, and comprise the semiconductor work electrode, to electrode be filled in electrolyte between these two electrodes, wherein said semiconductor work electrode by conductive substrates, be coated in the semiconductor nano hyaline layer on this electrically-conductive backing plate and the light-sensitive coloring agent that is adsorbed on described semiconductor nano film surface consists of jointly; Described for the DSSC of electrode for single layer structure, it is made of conductive substrates and the catalyst layer that is arranged on this conductive substrates, for the DSSC of laminated construction, it is stacked the merging absorbing dye by the semi-conducting material opposite with the semiconductor type of work electrode used and conductive substrates and consists of; The oxidation-reduction pair that has included the hole transport effect in described electrolyte.
As further preferably, the conductive substrates in described DSSC is transparent oxide electro-conductive glass or transparent conductive polymer.
As further preferably, the semiconductor nano hyaline layer in described DSSC is made of titanium dioxide, zinc oxide, tin oxide, niobium oxide or nickel oxide; Catalyst layer is made of platinum, carbon or conducting polymer.
As further preferably, the light-sensitive coloring agent in described DSSC is full organic dyestuff, porphyrin dye or ruthenium complex dyestuff.
As further preferably, it is solid-state, liquid or accurate solid-state that the electrolyte in described DSSC is.
As further preferably, described crystal silicon solar energy battery comprise p-type base layer and the N-shaped diffusion layer that is connected with each other by p-n junction and be separately positioned on the p-type base layer and the N-shaped diffusion layer on be used for drawing the upper/lower electrode of the electric energy that produces.
As further preferably, described film photovoltaic cell device is arranged on the peripheral structure of building, and described peripheral structure comprises glass curtain wall, lighting roof, door glass or wall.
As further preferably, the light transmission rate of described film photovoltaic cell device is adjusted by the transparency that changes the connection in series-parallel connected mode between DSSC and crystal silicon solar energy battery or change DSSC.
As further preferably, the color of described DSSC is by adjusting with absorbing wavelength different dyestuff and electrolyte.
As further preferably, the pattern of described DSSC is by using the different dyestuff of absorbing wavelength, change the shape of conductive substrates semiconductor-on-insulator nanometer crystal film or changing series-parallel system adjustment between DSSC and silicon solar cell or thin-film solar cells.
In general, according to film photovoltaic cell device of the present utility model compared with prior art, mainly possess following technological merit:
1, by DSSC and crystal silicon solar energy battery are both combined for building structure, can bring into play the characteristics of the latter's high-photoelectric transformation efficiency when the high light condition, and when the low light level or the bad condition of lighting angle, give full play to the relative higher advantage of the former conversion efficiency under this environment, thereby satisfy round-the-clock opto-electronic conversion requirement;
2, utilizing better the solar power generation environmental protection and energy saving simultaneously, change by DSSC is connected connection and arrangement mode with crystal silicon solar energy battery, can tackle mutually light transmission rate, the light conversion efficiency of film photovoltaic cell device and adjust as required, have the wider characteristics of applicable surface;
3, set-up mode and the type of each assembly in DSSC are adjusted, can enrich the selection of photovoltaic building material on color, pattern, transparency, preparation technology is simple simultaneously, cost is low, can directly as the construction material use, be applicable to all kinds of purposes of photovoltaic solar architecture-integral.
Description of drawings
Fig. 1 is the formation schematic diagram according to film photovoltaic cell device of the present utility model;
Fig. 2 is the structural representation of the DSSC shown in Fig. 1.
In institute's drawings attached, identical Reference numeral is used for representing identical element or structure, wherein:
The 1-DSSC; The 2-crystal silicon solar energy battery; 11-semiconductor work electrode 12-is to electrode; The 13-electrolyte; The 111-conductive substrates; 112-semiconductor nano hyaline layer; The 113-light-sensitive coloring agent; The 121-conductive substrates; The 122-catalyst layer.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the utility model, and be not used in restriction the utility model.In addition, below in described each execution mode involved technical characterictic just can mutually not make up as long as consist of each other conflict.
that considers the integrated photovoltaic building based on DSSC of the prior art exists the lower defective of photoelectric conversion efficiency, the inventor is through a large amount of contrast and research, determine to select crystal silicon solar/thin-film solar cells and DSSC to combine and consist of novel film photovoltaic cell device, this device can be brought into play the characteristics of the high-photoelectric transformation efficiency of crystal silicon solar energy battery when the high light condition, give full play to DSSC conversion efficiency higher advantage relatively under this environment when the low light level or the bad condition of lighting angle, thereby guarantee this device large tracts of land is applied to building envelope such as roof, curtain wall, door glass, wall etc., the photoelectricity that can satisfy under different condition is efficiently changed requirement, obtain simultaneously device overall appearance pattern abundant, the light transmission rate adjustable feature, and has the processing and manufacturing of being convenient to, compact conformation, many-sided advantages such as cost is low.
The below will illustrate the utility model with the example that is combined as of DSSC and crystal silicon solar energy battery, and the combination between DSSC and thin-film solar cells is similar therewith.Fig. 1 is the integral body formation schematic diagram according to the utility model film photovoltaic cell device.As shown in fig. 1, basic composition according to the utility model film photovoltaic cell device comprises DSSC 1 and crystal silicon solar energy battery 2, the mode that combines by series, parallel or connection in series-parallel is between the two spliced, and has consisted of thus the layer structure that can be mounted to building.For the ease of and building between large tracts of land install and obtain higher solar energy and utilize effect, for each DSSC 1, its inside can be individual layer or laminated construction; In addition, can also be with the DSSC 1 of greater number and crystal silicon solar energy battery 2 according to various suitable arrangement modes, and the mode that combines by series, parallel or connection in series-parallel is stitched together, and forms thus large-area array structure.In a preferred embodiment, the formed array structure example of a plurality of film photovoltaic cell devices splicing is as being plate shaped or curved slab shape, so more ground, aspect, closely be installed on the various peripheral structures that possess different surfaces of building.In another preferred embodiment, described peripheral structure can comprise glass curtain wall, lighting roof, door glass, the wall of building, and other any structures that are applicable to realize the photovoltaic solar architecture-integral.
Fig. 2 is the structural representation of the DSSC shown in Fig. 1.As shown in Figure 2, DSSC 1 comprises semiconductor work electrode 11, to electrode 12 and electrolyte 13, wherein mutually opposed to electrode 12 and semiconductor work electrode 11, for example bond to consist of inner chamber by PUR, electrolyte 13 is filled in this inner chamber, and contains oxidation-reduction pair.In addition, by drawing respectively wire from two electrodes, the direct current that inner opto-electronic conversion produces can be exported and collected.
Semiconductor work electrode 11 by conductive substrates 111, be coated in the semiconductor nano hyaline layer 112 on electrically-conductive backing plate 111 and be adsorbed on the lip-deep light-sensitive coloring agent 113 of semiconductor nano hyaline layer 112 and jointly consist of, wherein conductive substrates 11 can be selected such as be the transparent oxide electro-conductive glass of FTO electro-conductive glass, perhaps transparent conductive polymer etc.; Semiconductor nano hyaline layer 112 can be selected to be made of inorganic semiconductor materials such as titanium dioxide, zinc oxide, tin oxide, niobium oxide or nickel oxide; Light-sensitive coloring agent 113 can be chosen as full organic dyestuff, porphyrin dye or ruthenium complex etc.To electrode 12 by conductive substrates 121 be arranged on this suprabasil catalyst layer 122 and form, wherein conductive substrates 121 can select to select FTO electro-conductive glass or transparent conductive polymer etc., and catalyst layer 122 can be made of the material that the oxidation-reduction pair in electrolyte 13 plays catalytic action platinum, carbon, conducting polymer or other.That electrolyte 13 for example is is solid-state, the liquid or accurate solid-state form of fuse salt and ion for example, and has comprised the oxidation-reduction pair of hole transport effect.
The below will describe the manufacturing process of DSSC for example.
At first be the making step of semiconductor work electrode: can adopt laser or zinc powder and hydrochloric acid that FTO is led the conducting film fluorine doped tin oxide that does not need to conduct electricity on glass and erode and form strip, and between each strip by silk screen printing on slice silver slurry so that collected current; Conducting film is being arranged and there is no the place of silver slurry with the titania slurry silk screen printing of the diameter 10-400 nanometer of alcohol, ethyl cellulose and terpinol preparation, then c degree sintering forms the semiconductor nano hyaline layer of 8-20 micron thickness after 30 minutes; Then, after having the FTO electro-conductive glass of semiconductor nano hyaline layer to be cooled to 80 ~ 100 degree, be immersed in 0.3mM ruthenium dye (NaRu (H
2Dcbpy) (dmbpy) (NCS)
2, wherein: H
2Dcbpy=4,4-dicarboxylic acids-2,2-bipyridine, dmbpy=4,4-dinonyl-2,2-bipyridine, NCS=thiocyanate) acetonitrile solution in about 12 hours, make the semiconductor work electrode.Making step to electrode is: at first make a call to two holes on the FTO electro-conductive glass, then be coated with the aqueous isopropanol of last layer chloroplatinic acid in the one side that conducting film is arranged, form at last the catalyst layer of one deck platinum at 400-500 degree sintering.DSSC electrolyte used consist of 1,3-methylimidazole iodine, iodine, 1-butyl-1 hydrogen-benzimidazole, guanidine thiocyanate, solvent are methoxypropionitrile.
After the making of completing each components of DSSC, it need to be assembled: PUR is cut into suitable size, it is attached to the surrounding of titanium deoxid film in work electrode, the one side that then will the Pt layer be arranged to electrode to inner cap on work electrode, steady job electrode and to the relative position of electrode, heating and pressurization simultaneously are then cooling, and work electrode is together with namely having adhered to electrode like this.Then, electrolyte by the aperture on electrode is injected in battery.Seal aperture after having injected electrolyte; Then improve the capacity gauge of electronics with ultrasonic scolding tin at the battery glass edge, and draw wire from two-stage.
For crystal silicon solar energy battery or thin-film solar cells 2, its crystal silicon solar energy battery primary structure comprise p-type base layer and the N-shaped diffusion layer that is connected with each other by p-n junction and be separately positioned on the p-type base layer and the N-shaped diffusion layer on be used for drawing the upper/lower electrode of the electric energy that produces.Its basic functional principle is: when radiation of visible light was surperficial to silicon crystal, a part of photon was absorbed by silicon materials and energy is passed to silicon atom, made thus electronics generation transition become free electron and formed potential difference in p-n junction both sides gathering; When circuit is connected in the outside, will there be electric current to flow through external circuit and produce power output.Its thin-film solar cells, its primary structure are lamination transparent electrode layer, thin film semiconductive layer, inner face electrode layers successively on the insulating properties substrate.Its basic functional principle is to utilize the photovoltaic effect of P-N pn junction p n that luminous energy is directly changed into electric energy.In the utility model, described crystal silicon solar energy battery and thin-film solar cells 2 can be stipulated according to GB/T 14007-92.
In Fig. 1, what the connection between DSSC 1 and crystal silicon solar energy battery 2 was adopted is the series system of commonly using, and namely links with both positive and negative polarity between DSSC and crystal silicon solar energy battery.By the film photovoltaic cell device in Fig. 1 being carried out the light transmission rate test, light transmission rate in the time of can finding out independent use crystal silicon solar energy battery is 0 substantially, and the light transmission rate of the film photovoltaic cell device in the utility model in visible-range can reach 30% left and right.In addition, by using the film photovoltaic cell device shown in Fig. 1 at incident intensity 20%(20mW/cm
2, the standard sunlight conditions) environment under test, test result shows: wherein the open circuit voltage of DSSC is 672mV, short circuit current is density 4.25mA/cm
2, fill factor, curve factor is 0.77, efficient is 9.35%; The open circuit voltage of crystal silicon solar energy battery is 395mV, and short circuit current is density 10.1mA/cm
2, fill factor, curve factor is 0.53, efficient is 10.5%; And for the film photovoltaic cell device that jointly is comprised of both, its open circuit voltage is 1073mV, and short circuit current is density 3.59mA/cm
2, fill factor, curve factor is 0.55, efficient is more than 10%.Above digital proof is according to film photovoltaic cell device of the present utility model, even if in the situation that illumination condition is undesirable, also can realize the photoelectric conversion efficiency that high light transmission rate is large and higher, satisfy the round-the-clock requirement of carrying out opto-electronic conversion, and be particularly useful for the purposes of photovoltaic solar architecture-integral.
In addition, whole light transmission rate and photoelectric conversion efficiency according to film photovoltaic cell device of the present utility model can be changed by following approach: for example the electric connection mode between a plurality of DSSC and crystal silicon solar energy battery is adjusted, or the transparency of wherein DSSC is changed.In order to change the transparency of DSSC self, can be by the optical absorption characteristics of its light-sensitive coloring agent and the thickness of dye coating be realized.
In addition, except playing converting electrical energy, saving the effect of the energy, can also play decoration function according to film photovoltaic cell device of the present utility model to the building of installing.For example, can be by using the different dyestuff of absorbing wavelength, changing the shape of conductive substrates semiconductor-on-insulator nanometer crystal film or the series-parallel system between change DSSC and silicon solar cell or thin-film solar cells etc., change the pattern of the semiconductor work electrode of DSSC, realize thus different visual effects; The color of semiconductor work electrode can change by changing light-sensitive coloring agent and the electrolytical color of adsorbing on nanocrystalline slurry.
Those skilled in the art will readily understand; the above is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (9)
1. film photovoltaic cell device that is used for the photovoltaic solar architecture-integral, it is characterized in that, this film photovoltaic cell device is spliced by the mode that series, parallel or connection in series-parallel combine with crystal silicon solar energy battery or thin-film solar cells (2) by DSSC (1), and forms the layer structure that can be mounted to building.
2. film photovoltaic cell device as claimed in claim 1, it is characterized in that, described DSSC (1) is individual layer or laminated construction, and comprise semiconductor work electrode (11), to electrode (12) be filled in electrolyte (13) between these two electrodes, wherein said semiconductor work electrode by conductive substrates (111), be coated in the semiconductor nano hyaline layer (112) on this electrically-conductive backing plate and be adsorbed on that the lip-deep light-sensitive coloring agent of described semiconductor nano hyaline layer (112) (113) is common to be consisted of; Described for the DSSC of electrode for single layer structure, it is made of conductive substrates (121) and the catalyst layer (122) that is arranged on this conductive substrates, for the DSSC of laminated construction, it is stacked the merging absorbing dye by the semi-conducting material opposite with the semiconductor type of work electrode used and conductive substrates and consists of; The oxidation-reduction pair that has included the hole transport effect in described electrolyte.
3. film photovoltaic cell device as claimed in claim 2, is characterized in that, the conductive substrates in described DSSC (111,121) is transparent oxide electro-conductive glass or transparent conductive polymer.
4. film photovoltaic cell device as claimed in claim 2 or claim 3, is characterized in that, the light-sensitive coloring agent in described DSSC is full organic dyestuff, porphyrin dye or ruthenium complex dyestuff.
5. film photovoltaic cell device as claimed in claim 2 or claim 3, is characterized in that, it is solid-state, liquid or accurate solid-state that the electrolyte in described DSSC is.
6. film photovoltaic cell device as claimed in claim 1, is characterized in that, described film photovoltaic cell device is arranged on the peripheral structure of building, and described peripheral structure comprises glass curtain wall, lighting roof, door glass or wall.
7. film photovoltaic cell device as described in claim 1 or 6, it is characterized in that, the light transmission rate of described film photovoltaic cell device is adjusted by the transparency of the connection in series-parallel connected mode between change DSSC and crystal silicon solar energy battery or change DSSC.
8. film photovoltaic cell device as claimed in claim 1 or 2, is characterized in that, the color of described DSSC is by adjusting with absorbing wavelength different dyestuff and electrolyte.
9. film photovoltaic cell device as claimed in claim 1 or 2, it is characterized in that, the pattern of described DSSC is by using the different dyestuff of absorbing wavelength, changing the shape of conductive substrates semiconductor-on-insulator nanometer crystal film or the series-parallel system adjustment between change DSSC and silicon solar cell or thin-film solar cells.
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| CN2012205122834U CN202949381U (en) | 2012-10-08 | 2012-10-08 | Photovoltaic cell device for photovoltaic solar building integration |
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| CN2012205122834U CN202949381U (en) | 2012-10-08 | 2012-10-08 | Photovoltaic cell device for photovoltaic solar building integration |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104410358A (en) * | 2014-11-24 | 2015-03-11 | 上海太阳能科技有限公司 | Ceramic-plate-like dye sensitization battery photovoltaic building component |
| CN105337563A (en) * | 2015-11-30 | 2016-02-17 | 宁波大智机械科技有限公司 | Connection device of solar photovoltaic panel assembly and production method of connection device |
| CN108457406A (en) * | 2018-04-04 | 2018-08-28 | 四川聚创石墨烯科技有限公司 | A kind of architecture-integral photovoltaic and photothermal alliance component based on the design of indoor and outdoor perception |
-
2012
- 2012-10-08 CN CN2012205122834U patent/CN202949381U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104410358A (en) * | 2014-11-24 | 2015-03-11 | 上海太阳能科技有限公司 | Ceramic-plate-like dye sensitization battery photovoltaic building component |
| CN105337563A (en) * | 2015-11-30 | 2016-02-17 | 宁波大智机械科技有限公司 | Connection device of solar photovoltaic panel assembly and production method of connection device |
| CN108457406A (en) * | 2018-04-04 | 2018-08-28 | 四川聚创石墨烯科技有限公司 | A kind of architecture-integral photovoltaic and photothermal alliance component based on the design of indoor and outdoor perception |
| CN108457406B (en) * | 2018-04-04 | 2024-04-30 | 曜灵(广东)新能源科技有限公司 | Building integrated photovoltaic photo-thermal combined supply assembly based on indoor appearance design |
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