JP2012227482A - Electronic component mounting package and electronic device using the same - Google Patents

Electronic component mounting package and electronic device using the same Download PDF

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JP2012227482A
JP2012227482A JP2011096263A JP2011096263A JP2012227482A JP 2012227482 A JP2012227482 A JP 2012227482A JP 2011096263 A JP2011096263 A JP 2011096263A JP 2011096263 A JP2011096263 A JP 2011096263A JP 2012227482 A JP2012227482 A JP 2012227482A
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sealing material
electronic component
terminal
hole
substrate
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Masahiko Taniguchi
雅彦 谷口
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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Abstract

PROBLEM TO BE SOLVED: To provide: an electronic component mounting package with high reliability; and an electronic device using the same.SOLUTION: An electronic component mounting package includes: a substrate 1 having an electronic component mounting section 1a disposed on an upper surface of the substrate, and a through hole 1b extended between the upper surface and a lower surface of the substrate; a sealing material 2 loaded in the through hole 1b; and an upper end that protrudes upward from the upper surface of the substrate 1, and a lower end that protrudes downward from the lower surface of the substrate 1. The upper end and the lower end extend through the sealing material 2, and are fixed to the substrate 1. The electronic component mounting package includes terminals 3 configured to electrically connect electronic components therethrough. The sealing material 2 includes a recess 2a formed so as to surround the terminals 3.

Description

本発明は、例えば光通信分野等に用いられる光半導体素子等の電子部品を搭載して収納するための電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for mounting and storing an electronic component such as an optical semiconductor element used in the field of optical communication, for example, and an electronic apparatus using the same.

近年、例えば40km以下の伝送距離における高速通信に対する需要が急激に増加しており、高速大容量な情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する半導体装置等の電子装置の高速化が注目されており、電子装置による光信号の高出力化と高速化が伝送容量を向上させるための課題であるとして研究開発されている。   In recent years, for example, the demand for high-speed communication at a transmission distance of 40 km or less is rapidly increasing, and research and development on high-speed and large-capacity information transmission is being advanced. In particular, increasing speed of electronic devices such as semiconductor devices that receive and transmit optical signals using optical communication devices has been attracting attention, and the issue of increasing the output and speed of optical signals by electronic devices to improve transmission capacity It has been researched and developed as being.

光通信分野等に用いられる光半導体素子等の電子部品が搭載されるパッケージとして、貫通孔を有する基体と、貫通孔に充填された封止材と、封止材を貫通して基体に固定された端子とを備えているものがある。電子部品は、基体の上面に搭載され、例えば蓋体によって覆われる。   As a package on which an electronic component such as an optical semiconductor element used in the field of optical communication or the like is mounted, a base having a through hole, a sealing material filled in the through hole, a sealing material penetrating the sealing material, and fixed to the base Some of them have terminals. The electronic component is mounted on the upper surface of the base and is covered with, for example, a lid.

特開平8−130266号公報JP-A-8-130266

上述のパッケージに関して、封止材の端子との接合部分において、封止材の一部が端子に濡れ広がるように端子に付着しており、メニスカス部分が形成されていることがある。このメニスカス部分は、基体の上面側であれば上端部に向かうに伴って、基体の下面側であれば下端部に向かうに伴って、端子の周囲に付着している封止材の端子表面からの厚みが小さくなるため、例えば基体および封止材の熱膨張係数の違いによって生じる応力が原因となりクラックが生じてパッケージの気密性が損なわれる可能性がある。   With respect to the above-described package, a part of the sealing material is attached to the terminal so as to spread out on the terminal at the joint portion of the sealing material with the terminal, and a meniscus portion may be formed. This meniscus part is from the terminal surface of the sealing material adhering to the periphery of the terminal as it goes toward the upper end if it is on the upper surface side of the substrate and toward the lower end portion if it is on the lower surface side of the substrate. Since the thickness of the package becomes small, for example, the stress caused by the difference in the thermal expansion coefficient between the substrate and the sealing material may cause a crack, thereby impairing the airtightness of the package.

本発明の一つの態様によれば、電子部品搭載用パッケージは、上面および下面を有しており、前記上面に設けられた電子部品の搭載部と前記上面から前記下面にかけて設けられた貫通孔とを含む基体と、前記貫通孔に充填された封止材と、該封止材を貫通して前記基体に固定されており、前記基体の前記上面から上方へ突出している上端と前記基体の前記下面から下方へ突出している下端とを有しており、前記電子部品が電気的に接続される端子とを備えており、前記封止材は、前記端子を取り囲むように形成された凹部を有していることを特徴とするものである。   According to one aspect of the present invention, the electronic component mounting package has an upper surface and a lower surface, and an electronic component mounting portion provided on the upper surface and a through hole provided from the upper surface to the lower surface A base material including a sealing material filled in the through-hole, an upper end projecting upward from the top surface of the base material, and being fixed to the base material through the sealing material, and the base material A lower end projecting downward from the lower surface, and a terminal to which the electronic component is electrically connected, and the sealing material has a recess formed to surround the terminal. It is characterized by that.

本発明の他の態様によれば、前記凹部は、前記端子から離間して形成されていることを特徴とするものである。   According to another aspect of the present invention, the recess is formed apart from the terminal.

本発明の他の態様によれば、電子装置は、上記構成の本発明の電子部品搭載用パッケージと、該電子部品搭載用パッケージの前記搭載部に搭載された電子部品と、該電子部品および前記貫通孔を覆うように前記基体の前記上面に接合された蓋体とを備えていることを特徴とするものである。   According to another aspect of the present invention, an electronic device includes the electronic component mounting package of the present invention having the above-described configuration, the electronic component mounted on the mounting portion of the electronic component mounting package, the electronic component, and the electronic component. And a lid joined to the upper surface of the base so as to cover the through-hole.

本発明の一つの態様によれば、電子部品搭載用パッケージは、基体に設けられた貫通孔に充填された封止材と、封止材を貫通して基体に固定されている端子とを備えており、封止材が、端子を取り囲むように形成された凹部を有していることによって、基体と封止材の熱膨張係数の違いによって貫通孔の内壁から封止材に加わる応力により、封止材における端子との接合部分の端部にクラックが入ったとしても、凹部の壁面でクラックの進行が抑制されてクラックが拡がらないものとなり、信頼性が高いものとなる。   According to one aspect of the present invention, an electronic component mounting package includes a sealing material filled in a through-hole provided in a base, and a terminal that passes through the sealing material and is fixed to the base. The sealing material has a recess formed so as to surround the terminal, and due to the stress applied to the sealing material from the inner wall of the through hole due to the difference in thermal expansion coefficient between the base and the sealing material, Even if a crack is generated at the end of the joint portion with the terminal in the sealing material, the progress of the crack is suppressed on the wall surface of the recess, and the crack does not spread, and the reliability is high.

本発明の他の態様によれば、上記構成の電子部品搭載用パッケージは、凹部が端子から離間して形成されていることによって、封止材の端子周辺が端子を取り囲んだ突出形状となり、基体と封止材の熱膨張係数の違いによって貫通孔の内壁から封止材に加わる応力の位置が封止材の端子との接合部分の端部からずれて、封止材における端子との接合部分の端部にクラックが入り難くなり、より信頼性が高いものとなる。   According to another aspect of the present invention, the electronic component mounting package having the above-described configuration has a protruding shape in which the periphery of the terminal of the sealing material surrounds the terminal because the recess is formed apart from the terminal. The position of the stress applied to the sealing material from the inner wall of the through-hole due to the difference in thermal expansion coefficient between the sealing material and the sealing material shifts from the end of the joining portion with the terminal of the sealing material, and the joint portion with the terminal in the sealing material It becomes difficult for cracks to enter the end portions of the, and the reliability becomes higher.

本発明の他の態様によれば、電子装置は、上記構成の電子部品搭載用パッケージの搭載部に搭載された電子部品と、電子部品および貫通孔を覆うように基体の上面に接合された蓋体とを備えていることによって、信頼性が高いものとなる。   According to another aspect of the present invention, an electronic device includes an electronic component mounted on the mounting portion of the electronic component mounting package having the above configuration, and a lid bonded to the upper surface of the base so as to cover the electronic component and the through hole. By having the body, it becomes highly reliable.

本発明の電子装置の実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic device of this invention. 図1に示された電子装置のA−A線における断面を示す断面図である。It is sectional drawing which shows the cross section in the AA of the electronic device shown by FIG. (a)は図2に示された電子装置のA部の拡大図であり、(b)、(c)は同様の電子装置の他の例の要部拡大図である。(A) is the enlarged view of the A section of the electronic device shown in FIG. 2, (b), (c) is the principal part enlarged view of the other example of the same electronic device. 図1に示された本発明の電子装置の下面の一例を示す下面図である。It is a bottom view which shows an example of the lower surface of the electronic device of this invention shown by FIG. 本発明の電子装置の実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic device of this invention. 図5に示された電子装置のA−A線における断面を示す断面図である。It is sectional drawing which shows the cross section in the AA of the electronic device shown by FIG. (a)は図6に示された電子装置のA部の拡大図であり、(b)、(c)は同様の電子装置の他の例の要部拡大図である。(A) is an enlarged view of the A part of the electronic device shown in FIG. 6, and (b) and (c) are enlarged views of the main part of another example of the same electronic device. 図5に示された本発明の電子装置の下面の一例を示す下面図である。It is a bottom view which shows an example of the lower surface of the electronic device of this invention shown by FIG. 図6に示された突出部の拡大図である。It is an enlarged view of the protrusion part shown by FIG.

本発明の一つの実施形態における電子部品搭載用パッケージおよびそれを用いた電子装置について、添付の図面を参照しつつ詳細に説明する。   An electronic component mounting package and an electronic apparatus using the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

図1〜図8において、1は基体、1aは搭載部、1bは貫通孔、1cは蓋体接合部、2は封止材、2aは封止材2に形成された凹部、3は端子、3aは端子3の中で高周波信号の流れる信号端子、3bは端子3の中で高周波信号の流れないDC端子、4は電子部品、4aは回路基板、4bは中継基板、5は蓋体、6は温度制御素子、7はボンディングワイヤ、8はモニタPD素子、9は反射鏡、10は温度モニタ素子である。   1 to 8, 1 is a base, 1a is a mounting portion, 1b is a through hole, 1c is a lid joint portion, 2 is a sealing material, 2a is a recess formed in the sealing material 2, 3 is a terminal, 3a is a signal terminal through which a high-frequency signal flows in the terminal 3, 3b is a DC terminal in which no high-frequency signal flows in the terminal 3, 4 is an electronic component, 4a is a circuit board, 4b is a relay board, 5 is a lid, 6 Is a temperature control element, 7 is a bonding wire, 8 is a monitor PD element, 9 is a reflecting mirror, and 10 is a temperature monitor element.

図1、図5に示す例では、基体1の上面の中央部を搭載部1aとして、ペルチェ素子等の温度制御素子6および回路基板4aを介して電子部品4が搭載されている。電子部品4の一方の端子はボンディングワイヤ7によって回路基板4a上の配線に電気的に接続されている。信号端子3aの上端部と中継基板4bの信号線路とがろう材等の接合材によって電気的に接続され、中継基板4bの上面の信号線路と回路基板4aの配線とがボンディングワイヤ7によって電気的に接続されることで、電子部品4と信号端子3aとが電気的に接続されている。また、電子部品4の他方の端子は、回路基板4aの配線を介して、グラウンドとして機能するDC端子3bの一つに電気的に接続されている。これによって、信号端子3aは電子部品4と外部電気回路(図示せず)との間の入出力信号を伝送する伝送路として機能する。   In the example shown in FIGS. 1 and 5, the electronic component 4 is mounted via a temperature control element 6 such as a Peltier element and a circuit board 4a, with the central portion of the upper surface of the substrate 1 being a mounting portion 1a. One terminal of the electronic component 4 is electrically connected to the wiring on the circuit board 4 a by a bonding wire 7. The upper end portion of the signal terminal 3a and the signal line of the relay board 4b are electrically connected by a bonding material such as a brazing material, and the signal line on the upper surface of the relay board 4b and the wiring of the circuit board 4a are electrically connected by the bonding wire 7. As a result, the electronic component 4 and the signal terminal 3a are electrically connected. The other terminal of the electronic component 4 is electrically connected to one of the DC terminals 3b functioning as the ground via the wiring of the circuit board 4a. Thereby, the signal terminal 3a functions as a transmission path for transmitting an input / output signal between the electronic component 4 and an external electric circuit (not shown).

図1、図5に示された例において、主となる電子部品4がLD素子である例が示されており、回路基板4a上には、LD素子の発振状態をモニタするPD素子8,LD素子から発振されたレーザー光を回路基板4aの上面から垂直方向に反射させるための反射鏡9,および回路基板4a上の温度を測定して温度制御素子6へフィードバックするための温度モニタ素子10が搭載されている。そして、基体1には、信号端子3aを固定するための貫通孔1b以外に、3つの貫通孔1bが形成され、それぞれに2本ずつのDC端子3bが封止材2によって基体1に固定され、第1の基体1に形成された第1の貫通孔1bからDC端子3bの端部が突出している。DC端子3bは、上述したグラウンド用以外に、温度制御素子6,モニタPD8,および温度モニタ素子10への電力供給用のもの等がある。   In the example shown in FIGS. 1 and 5, an example in which the main electronic component 4 is an LD element is shown. On the circuit board 4a, a PD element 8 for monitoring the oscillation state of the LD element, LD There is a reflecting mirror 9 for reflecting the laser light oscillated from the element in the vertical direction from the upper surface of the circuit board 4a, and a temperature monitoring element 10 for measuring the temperature on the circuit board 4a and feeding it back to the temperature control element 6. It is installed. In addition to the through hole 1b for fixing the signal terminal 3a, the base 1 is formed with three through holes 1b, and two DC terminals 3b are fixed to the base 1 by the sealing material 2 respectively. The end of the DC terminal 3b protrudes from the first through hole 1b formed in the first base 1. The DC terminal 3b is for supplying power to the temperature control element 6, the monitor PD 8, and the temperature monitor element 10 in addition to the above-described ground.

なお、図1、図5において、電子部品4等が搭載された状態がわかるように蓋体5が外された状態で示されているが、図2に示された例のように、破線で示されたような蓋体5が溶接またはろう接によって蓋体接合部1cに接合される。図2、図6に示された例において、反射鏡9によって基体1の上面から垂直上方向に反射されたレーザー光が通るための透光性部材がはめられた窓部を有する蓋体5の例が示されている。   In FIGS. 1 and 5, the lid 5 is shown removed so that the state where the electronic component 4 and the like are mounted can be seen. However, as shown in the example shown in FIG. The lid 5 as shown is joined to the lid joint 1c by welding or brazing. In the example shown in FIGS. 2 and 6, the lid 5 having a window portion in which a translucent member for allowing laser light reflected vertically upward from the upper surface of the substrate 1 by the reflecting mirror 9 to pass is fitted. An example is shown.

なお、図1および図2、図5および図6に示された例において、1個の電子部品4が回路基板4aおよび温度制御素子6を介して基体1の搭載部1aの上に搭載されているが、複数の電子部品4が搭載されてもよいし、回路基板4aおよび温度制御素子6を介さずに基体1の搭載部1aの上に直接搭載されてもよいし、ボンディングワイヤ7によって電子部品4と信号端子3aとが直接接続されてもよい。また、信号端子3aの数も、電子部品4の数や電子部品4の電極の数に応じて複数であっても構わない。そして、DC端子3bの数も、温度制御素子6、モニタPD8、温度モニタ素子10等の数に応じて決まるものである。   In the example shown in FIGS. 1, 2, 5, and 6, one electronic component 4 is mounted on the mounting portion 1 a of the base 1 via the circuit board 4 a and the temperature control element 6. However, a plurality of electronic components 4 may be mounted, or may be mounted directly on the mounting portion 1a of the base 1 without using the circuit board 4a and the temperature control element 6, or the bonding wires 7 may The component 4 and the signal terminal 3a may be directly connected. Also, the number of signal terminals 3a may be plural according to the number of electronic components 4 and the number of electrodes of the electronic components 4. The number of DC terminals 3b is also determined according to the number of temperature control elements 6, monitor PDs 8, temperature monitor elements 10, and the like.

本実施形態における電子部品搭載用パッケージは、図1〜図8に示されているように、上面および下面を有しており、上面に設けられた電子部品の搭載部1aと上面から下面にかけて設けられた貫通孔1bとを含む基体1と、貫通孔1bに充填された封止材2と、封止材2を貫通して基体1に固定されており、基体1の上面から上方へ突出している上端と基体1の下面から下方へ突出している下端とを有しており、電子部品が電気的に接続される端子3とを備えており、封止材2は、端子3を取り囲むように形成された凹部2aを有していることを特徴とするものである。   As shown in FIGS. 1 to 8, the electronic component mounting package in the present embodiment has an upper surface and a lower surface, and is provided from the upper surface to the lower surface of the electronic component mounting portion 1a provided on the upper surface. The base 1 including the through-hole 1b formed, the sealing material 2 filled in the through-hole 1b, the sealing material 2 is fixed to the base 1 through the sealing material 2, and protrudes upward from the upper surface of the base 1 And a terminal 3 to which an electronic component is electrically connected. The sealing material 2 surrounds the terminal 3. It has the recessed part 2a formed, It is characterized by the above-mentioned.

このような構成により、基体1と封止材2の熱膨張係数の挙動の違いにより貫通孔1bの内壁から封止材2に加わる応力により、封止材2における端子3との接合部分の端部にクラックが入ったとしても、凹部2aの壁面でクラックの進行が抑制されてクラックが拡がらないものとなり、高信頼性の電子部品搭載用パッケージとなる。これによって、高出力の素子を使用する場合に基体1に熱伝導率の高い材料を使用したいが封止材2の熱膨張係数と合わないことで使用できなかったり、50Ωでインピーダンスを整合させるために低誘電率の封止材2を使用したいが、熱伝導率の良い基体1の熱膨張係数と合わないことで使用できなかったりした場合に、多少の熱膨張係数の差であれば使用できるようになるので、設計の自由度が高くなる。   With such a configuration, due to the stress applied to the sealing material 2 from the inner wall of the through hole 1b due to the difference in the behavior of the thermal expansion coefficient between the base 1 and the sealing material 2, the end of the joint portion with the terminal 3 in the sealing material 2 Even if there is a crack in the portion, the progress of the crack is suppressed on the wall surface of the recess 2a and the crack does not spread, and a highly reliable electronic component mounting package is obtained. This makes it necessary to use a material with high thermal conductivity for the substrate 1 when using a high-power element, but it cannot be used because it does not match the thermal expansion coefficient of the sealing material 2, or the impedance is matched with 50Ω. In the case where it is desired to use the sealing material 2 having a low dielectric constant, but cannot be used because it does not match the thermal expansion coefficient of the substrate 1 having good thermal conductivity, it can be used as long as it has a slight difference in thermal expansion coefficient. As a result, the degree of freedom in design increases.

また、本実施形態の電子部品搭載用パッケージにおいては、図1〜図8に示された例のように、貫通孔1bを長円形に形成し、貫通孔1b内に複数の端子3を封止材2で固定し、封止材2は、複数の端子3を各々取り囲むように形成された複数の凹部2aを有していることによって、複数の端子を同一の貫通孔中に形成した場合には、基体1の貫通孔1bの内側面から複数の端子3に加わる応力が不均等となるために封止材2の強度の弱い部分が起点となって封止材2にクラックがより顕著に発生しやすくなるが、凹部2aを形成す
ると、上記同じ原理で、凹部2aの壁面でクラックの進行が抑制されてクラックが拡がらないものとなり、高信頼性の電子部品搭載用パッケージとなる。例では2本の端子3を貫通孔1b内に固定しているが、3本以上の端子3を貫通孔1b内に固定しても良い。これによって、同じ面積の基体により多数の端子を気密に貫通させることができるようになるので、同じ寸法の基体1を使用した場合により多くの端子を形成することができるようになり、また、同じ端子3の数であれば、基体1を小さくすることができるようになるので、設計の自由度がより高くなる。一つの貫通孔1b内に複数の端子3を設けられており、仮に本実施形態の電子部品搭載用パッケージにおける封止材2の凹部2aを有さない構造の場合には、封止材における端子との接合部分の端部にクラックが入って封止材のクラックの進行が抑制されず、パッケージの気密性が損なわれる可能性がある。
Further, in the electronic component mounting package of the present embodiment, as in the example shown in FIGS. 1 to 8, the through hole 1b is formed in an oval shape, and a plurality of terminals 3 are sealed in the through hole 1b. When the plurality of terminals are formed in the same through-hole by fixing with the material 2 and the sealing material 2 has a plurality of recesses 2 a formed so as to surround the plurality of terminals 3, respectively. Since the stress applied to the plurality of terminals 3 from the inner surface of the through hole 1b of the substrate 1 is uneven, the sealing material 2 is more prone to cracks starting from the weaker portions of the sealing material 2. However, if the recess 2a is formed, the progress of cracks on the wall surface of the recess 2a is suppressed by the same principle as described above, and the cracks do not spread, resulting in a highly reliable electronic component mounting package. In the example, two terminals 3 are fixed in the through hole 1b, but three or more terminals 3 may be fixed in the through hole 1b. As a result, a large number of terminals can be air-tightly penetrated by a substrate having the same area, so that more terminals can be formed when the substrate 1 having the same dimensions is used. With the number of terminals 3, the base body 1 can be made smaller, and the degree of freedom in design becomes higher. In the case where a plurality of terminals 3 are provided in one through-hole 1b, and there is no recess 2a of the sealing material 2 in the electronic component mounting package of this embodiment, the terminals in the sealing material There is a possibility that cracks are generated at the end of the joint portion and the progress of the crack of the sealing material is not suppressed, and the airtightness of the package is impaired.

また、本実施形態の電子部品搭載用パッケージにおいては、凹部2aは、端子3から離間して形成されていることを特徴とするものである。   Further, in the electronic component mounting package of the present embodiment, the recess 2 a is formed away from the terminal 3.

このような構成により、封止材2の端子周辺が端子3を取り囲んだ突出形状となり、基体1と封止材2の熱膨張係数の違いによって貫通孔1bの内壁から封止材2に加わる応力の位置が封止材2の端子3との接合部分の端部からずれて、封止材2における端子3との接合部分の端部にクラックが入り難くなり、より高信頼性の電子部品搭載用パッケージとなる。   With such a configuration, the periphery of the terminal of the sealing material 2 has a protruding shape surrounding the terminal 3, and stress applied to the sealing material 2 from the inner wall of the through hole 1b due to the difference in thermal expansion coefficient between the base 1 and the sealing material 2 Is shifted from the end of the joint portion of the sealing material 2 to the terminal 3 and the end portion of the joint portion of the sealing material 2 to the terminal 3 is less likely to crack, so that a more reliable electronic component is mounted. It becomes a package for.

また、本実施形態の電子部品搭載用パッケージにおいては、図5〜図8に示された例のように、図1〜図4に示された例と同様に、貫通孔1bを長円形に形成し、貫通孔1b内に複数の端子3を封止材2で固定し、封止材2は、複数の端子3を各々取り囲むように端子3から離間して複数の凹部2aが形成されていることによって、複数の端子を同一の貫通孔中に形成した場合には、基体1の貫通孔1bの内側面から複数の端子3に加わる応力が不均等となるために封止材2の強度の弱い部分が起点となって封止材2にクラックがより顕著に発生しやすくなるが、端子3から離間して凹部2aを形成すると、上記同じ原理で、封止材2に加わる応力が分散されることで、封止材2と端子3の接合端部に加わる応力が小さくなるために、封止材2にクラックが入り難くなり、より高信頼性の電子部品搭載用パッケージとなる。例では2本の端子3を貫通孔1b内に固定しているが、図1〜図4に示された例と同様に、3本以上の端子3を貫通孔1b内に固定しても良い。   Further, in the electronic component mounting package of the present embodiment, as in the example shown in FIGS. 5 to 8, the through hole 1 b is formed in an oval shape as in the example shown in FIGS. 1 to 4. Then, a plurality of terminals 3 are fixed with a sealing material 2 in the through-hole 1b, and the sealing material 2 is spaced apart from the terminals 3 so as to surround each of the plurality of terminals 3, and a plurality of recesses 2a are formed. Thus, when a plurality of terminals are formed in the same through-hole, the stress applied to the plurality of terminals 3 from the inner surface of the through-hole 1b of the substrate 1 becomes uneven, so that the strength of the sealing material 2 is increased. Cracks are more likely to occur in the sealing material 2 starting from the weak part, but if the recess 2a is formed away from the terminal 3, the stress applied to the sealing material 2 is dispersed by the same principle as described above. As a result, the stress applied to the joining end portion of the sealing material 2 and the terminal 3 is reduced. The cracks are hardly enters, a more highly reliable electronic component mounting package. In the example, two terminals 3 are fixed in the through hole 1b, but three or more terminals 3 may be fixed in the through hole 1b as in the example shown in FIGS. .

本実施形態の電子装置は、上記構成の電子部品搭載用パッケージの搭載部1aに電子部品4を搭載するとともに、蓋体接合部1cに蓋体5を接合したことから、信頼性が高いものとなる。   The electronic device according to the present embodiment has high reliability because the electronic component 4 is mounted on the mounting portion 1a of the electronic component mounting package having the above-described configuration and the lid body 5 is joined to the lid joint portion 1c. Become.

本実施形態の電子装置は、上記構成において、電子部品4が温度制御素子6を介して搭載されているときには、温度制御素子6によって電子部品4の温度を一定に保つことができるようになり、温度変化によって発生する電子部品4の特性変化がなくなるので、より特性の安定したものとなる。   In the electronic device according to the present embodiment, when the electronic component 4 is mounted via the temperature control element 6 in the above configuration, the temperature of the electronic component 4 can be kept constant by the temperature control element 6. Since the characteristic change of the electronic component 4 caused by the temperature change is eliminated, the characteristic becomes more stable.

基体1は、上面の中央部に電子部品4の搭載部1aを有するとともに、搭載された電子部品4が発生する熱をパッケージの外部に放散する機能を有する。このため、基体1は、熱伝導性の良い金属から成るものであることが好ましい。搭載される電子部品4やセラミック製の回路基板4aの熱膨張係数に近いものが好ましく、またコストの安いものとして、例えば、Fe−Mn合金等の鉄系の合金や純鉄等の金属や、銅(Cu)や銅系の合金、発熱量が少ない場合にはFe−Ni−Co合金が選ばれる。より具体的には、Fe99.6質量%−Mn0.4質量%系のSPC(Steel Plate Cold)材(熱伝導率:80W/m・K)が
ある。例えば基体1がFe−Mn合金から成る場合は、この合金のインゴット(塊)に圧延加工や打ち抜き加工等の金属加工方法を施すことによって所定形状に製作され、貫通孔
1bはドリル加工や金型による打ち抜き加工によって形成される。また、基体1が搭載部1aとして突出部を有する形状の場合は、切削加工やプレス加工することによって形成することができる。
The base body 1 has a mounting portion 1a for the electronic component 4 at the center of the upper surface, and also has a function of radiating heat generated by the mounted electronic component 4 to the outside of the package. Therefore, the substrate 1 is preferably made of a metal having good thermal conductivity. What is close to the thermal expansion coefficient of the electronic component 4 to be mounted or the circuit board 4a made of ceramic is preferable, and as an inexpensive one, for example, an iron-based alloy such as an Fe-Mn alloy, a metal such as pure iron, Copper (Cu), a copper-based alloy, or Fe-Ni-Co alloy is selected when the amount of heat generated is small. More specifically, there is an SPC (Steel Plate Cold) material (thermal conductivity: 80 W / m · K) of Fe 99.6 mass% -Mn 0.4 mass%. For example, when the substrate 1 is made of an Fe—Mn alloy, the ingot (lumb) of the alloy is manufactured into a predetermined shape by applying a metal processing method such as rolling or punching, and the through-hole 1b is formed by drilling or mold. It is formed by punching. Moreover, when the base | substrate 1 is a shape which has a protrusion part as the mounting part 1a, it can form by cutting or pressing.

基体1は厚みが0.5〜1mmの平板状であり、その形状には特に制限はないが、例えば
直径が3〜6mmの円板状,半径が1.5〜8mmの円周の一部を切り取った半円板状,一
辺が3〜15mmの四角板状等である。
The substrate 1 is a flat plate having a thickness of 0.5 to 1 mm, and the shape thereof is not particularly limited. For example, the substrate 1 is a disc having a diameter of 3 to 6 mm and a half of a circle having a radius of 1.5 to 8 mm. A disc shape, a square plate shape with a side of 3 to 15 mm, or the like.

基体1の厚みは0.5mm以上が好ましい。厚みが0.5mm未満の場合は、電子部品4を保護するための金属製の蓋体5を金属製の基体1の上面に接合する際に、接合温度等の接合条件によっては基体1が曲がったりして変形し易くなる。また、厚みが1mmを超えると、電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなるので、基体1の厚みは1mm以下であるのが好ましい。   The thickness of the substrate 1 is preferably 0.5 mm or more. When the thickness is less than 0.5 mm, when the metal lid 5 for protecting the electronic component 4 is bonded to the upper surface of the metal substrate 1, the substrate 1 may be bent depending on the bonding conditions such as the bonding temperature. It becomes easy to deform. Further, if the thickness exceeds 1 mm, the thickness of the electronic component mounting package and the electronic device becomes unnecessarily thick, and it is difficult to reduce the size. Therefore, the thickness of the substrate 1 is preferably 1 mm or less.

搭載部1aの周辺には基体1の上面から下面にかけて形成された直径が0.6〜2.6mmの貫通孔1bを複数有する。信号端子3aが通る貫通孔1bの直径は、中心に信号端子3aが貫通することで特性インピーダンスが50Ωの同軸配線が形成されるような寸法とする。例えば、信号端子5の直径が0.2mm、封止材2の比誘電率が6.8の場合であれば、貫通孔1bの直径は1.75mmとすればよい。DC端子3bが通る貫通孔1bについては、DC端子8は特性インピーダンスの影響を受けないので、DC端子8と基体1とがショートしない程度に、DC端子3bと貫通孔1bの内面との間に十分な厚み(0.2mm程度)の封止
材3が入る0.6mm程度の大きさに形成すればよい。また、逆に貫通孔1bを上記寸法よ
りも大きくして、図1、図5に示す例のように複数のDC端子3bを貫通させても構わない。この場合は、貫通孔1bの長径に沿ってφ0.2mmのDC端子3b間に充分な間隔(0.3mm程度)をとってDC端子3b間のピッチを0.5mmとして、貫通孔1bの寸法は長
径は1.1mm短径を0.6mmとして2本のDC端子を形成できる。独立した貫通孔1bを2つ形成する場合のDC端子3bのピッチは0.9mm程度必要となるために複数のDC端子
3bを1つの貫通孔1bに形成することでDC端子3bの密度を高く形成できるようにな
る。上述したように、電子部品4の数や電子部品4の端子の数に応じて信号端子3aの数が、また電子部品4以外の他の素子等の数に応じてDC端子3bの数が決まるので、それに応じて貫通孔1bも適宜形成すればよい。
A plurality of through holes 1b having a diameter of 0.6 to 2.6 mm formed from the upper surface to the lower surface of the base 1 are provided around the mounting portion 1a. The diameter of the through hole 1b through which the signal terminal 3a passes is set such that a coaxial wiring having a characteristic impedance of 50Ω is formed by the signal terminal 3a passing through the center. For example, if the diameter of the signal terminal 5 is 0.2 mm and the relative permittivity of the sealing material 2 is 6.8, the diameter of the through hole 1b may be 1.75 mm. With respect to the through hole 1b through which the DC terminal 3b passes, the DC terminal 8 is not affected by the characteristic impedance, so that the DC terminal 8 and the base 1 are not short-circuited so that the DC terminal 3b and the inner surface of the through hole 1b are not short-circuited. What is necessary is just to form in the magnitude | size of about 0.6 mm in which the sealing material 3 of sufficient thickness (about 0.2 mm) enters. On the contrary, the through hole 1b may be made larger than the above dimension, and a plurality of DC terminals 3b may be penetrated as in the example shown in FIGS. In this case, a sufficient interval (about 0.3 mm) is provided between the DC terminals 3b of φ0.2 mm along the long diameter of the through hole 1b, and the pitch between the DC terminals 3b is 0.5 mm. Can form two DC terminals with a short diameter of 1.1 mm and 0.6 mm. When the two independent through holes 1b are formed, the pitch of the DC terminals 3b is required to be about 0.9 mm. Therefore, by forming a plurality of DC terminals 3b in one through hole 1b, the density of the DC terminals 3b is increased. become able to. As described above, the number of signal terminals 3a is determined according to the number of electronic components 4 and the number of terminals of electronic component 4, and the number of DC terminals 3b is determined according to the number of other elements other than electronic component 4. Therefore, the through hole 1b may be appropriately formed accordingly.

また、基体1の表面には、耐食性に優れ、ろう材との濡れ性に優れた厚さが0.5〜9μ
mのNi層と厚さが0.5〜5μmのAu層とをめっき法によって順次被着させておくのが
よい。これにより、基体1が酸化腐食するのを有効に防止することができるとともに、電子部品4や回路基板4aあるいは蓋体5等を基体1に良好にろう付けすることができる。
Further, the surface of the substrate 1 has a thickness of 0.5 to 9 μm, which has excellent corrosion resistance and excellent wettability with the brazing material.
It is preferable that the Ni layer of m and the Au layer having a thickness of 0.5 to 5 μm are sequentially deposited by plating. Thereby, it is possible to effectively prevent the base body 1 from being oxidatively corroded, and the electronic component 4, the circuit board 4a, the lid body 5 and the like can be brazed to the base body 1 in a good manner.

信号端子3aおよびDC端子3bの端子3は、Fe−Ni−Co合金やFe−Ni合金等の金属から成り、例えば信号端子3aがFe−Ni−Co合金から成る場合は、この合金のインゴット(塊)に圧延加工や打ち抜き加工等の金属加工方法を施すことによって、長さが1.5〜22mm、直径が0.1〜0.5mmの線状に製作される。   The terminal 3 of the signal terminal 3a and the DC terminal 3b is made of a metal such as Fe-Ni-Co alloy or Fe-Ni alloy. For example, when the signal terminal 3a is made of Fe-Ni-Co alloy, an ingot ( By applying a metal working method such as rolling or punching to the lump), the lump is produced into a linear shape having a length of 1.5 to 22 mm and a diameter of 0.1 to 0.5 mm.

信号端子3aおよびDC端子3bは、少なくとも下端部が基体1の貫通孔1bから1〜20mm程度突出するように封止材2を介して固定され、上端部は基体1の貫通孔1bから0〜2mm程度突出させる。   The signal terminal 3a and the DC terminal 3b are fixed via the sealing material 2 so that at least the lower end portion protrudes from the through hole 1b of the base body 1 by about 1 to 20 mm, and the upper end portion is set to 0 to 0 from the through hole 1b of the base body 1. Project about 2 mm.

グラウンド端子は基体1の下面にろう材等を用いて接続してもよい。   The ground terminal may be connected to the lower surface of the base 1 using a brazing material or the like.

封止材2は、ガラスやセラミックスなどの無機材料から成り、信号端子3aおよびDC端子3bの端子3と基体1との絶縁間隔を確保するとともに、信号端子3aおよびDC端
子3bを貫通孔1bに固定する機能を有する。このような封止材2の例としては、ホウケイ酸ガラス,ソーダガラス等のガラスおよびこれらのガラスに封止材2の熱膨張係数や比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、信号端子3aの外径が0.2mmの場合であれば、貫通孔1bの内径を1.75mmとして、封止材2
に比誘電率が6.8であるものを用いればよい。あるいは信号端子3aの外径が0.25mmの
場合であれば、貫通孔1bの内径を2.2mmとして、封止材2の比誘電率が6.8であるものを用いればよい。また、同じく信号端子3aの外径が0.25mmの場合であれば、貫通孔1bの内径を1.65mmとして、封止材2の比誘電率が5であるものを用いてもよい。封止材2の比誘電率が4であれば、同じ外径0.25mmの場合で、貫通孔1bの内径を1.35mmとすれば特性インピーダンスが50Ωとなる。
The sealing material 2 is made of an inorganic material such as glass or ceramics, and ensures an insulation interval between the terminal 3 of the signal terminal 3a and the DC terminal 3b and the base 1, and the signal terminal 3a and the DC terminal 3b are formed in the through hole 1b. Has the function of fixing. Examples of such a sealing material 2 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 2. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, in order to set the characteristic impedance to 50Ω, if the outer diameter of the signal terminal 3a is 0.2 mm, the inner diameter of the through hole 1b is set to 1.75 mm, and the sealing material 2
The one having a relative dielectric constant of 6.8 may be used. Alternatively, when the outer diameter of the signal terminal 3a is 0.25 mm, the inner diameter of the through hole 1b is 2.2 mm, and the relative permittivity of the sealing material 2 is 6.8. Similarly, if the outer diameter of the signal terminal 3a is 0.25 mm, the inner diameter of the through hole 1b may be 1.65 mm and the relative permittivity of the sealing material 2 may be 5. If the relative permittivity of the sealing material 2 is 4, the characteristic impedance is 50Ω when the inner diameter of the through hole 1b is 1.35 mm in the case of the same outer diameter of 0.25 mm.

封止材2の比誘電率が小さいほど、貫通孔1bを小さくしてもインピーダンスを50Ωに整合することができるため、結果として基体1の大きさの小型化に効果的であり、より小型の電子部品収納用パッケージとすることができる。   As the relative dielectric constant of the sealing material 2 is smaller, the impedance can be matched to 50Ω even if the through hole 1b is made smaller. As a result, the base 1 is more effectively reduced in size and more compact. An electronic component storage package can be obtained.

DC端子3bを固定するための封止材2は、特にインピーダンスを考慮する必要はなく、気密に封止してDC端子3bを固定できるものであればよいので、信号端子3aを固定するための封止材2と同じものでなくても構わない。信号端子3aの固定と同時にDC端子3bの固定を行なうためには、信号端子3aを固定するための封止材2と同じガラス、あるいは同程度の融点を有するガラスを用いるとよい。   The sealing material 2 for fixing the DC terminal 3b does not need to consider impedance in particular, and may be any material that can be hermetically sealed to fix the DC terminal 3b, so that the signal terminal 3a is fixed. The sealing material 2 may not be the same. In order to fix the DC terminal 3b at the same time as fixing the signal terminal 3a, it is preferable to use the same glass as the sealing material 2 for fixing the signal terminal 3a or a glass having the same melting point.

封止材2がガラスから成る場合は、内径が信号端子3aまたはDC端子3bの外径よりも大きく、外径が貫通孔1bの内径よりも小さい筒状になるように粉体プレス法や押し出し成形法等で成形されたガラスの封止材2を貫通孔1bに挿入し、信号端子3aまたはDC端子3bをこの封止材2に挿通する。そして、所定位置に所定深さで端子3が配置される様に穴が形成された受けジグに上記で組み立てた部材を上面が下になるようにして配置し、上から、所定位置に端子3を挿通させる貫通穴を形成した重石ジグを乗せた。このときに、封止材2は、端子3を取り囲むように凹部2aが形成できるように少なくとも受けジグおよび重石ジグのどちらか一方に端子3と封止材2の接合端部となる部位には、端子3を取り囲むように円環状の突起部を形成しておく。しかる後、所定の温度に加熱して封止材2を溶融させることによって、信号端子3aまたはDC端子3bが封止材2に埋め込まれるとともに貫通孔1bに基体1と絶縁されて気密に固定されると共に、封止材2は、端子3を取り囲むように形成された凹部2aを有している構造となり、さらに円環状の突起部の内径を端子3の直径より大きいものとすることにより、封止材2の凹部2aは、端子3から離間して形成され、封止材2の端子3周辺が端子3を取り囲んだ突出形状(突出部2b)の構造となる。このときに、突出部2bの高さは凹部2a底面から0.1mm以上
あると、確実に貫通孔1bの内壁から封止材2に加わる応力の位置は封止材2の端子3との接合端部からずれることで封止材2にクラックが入り難くなるので好ましい。
When the sealing material 2 is made of glass, a powder pressing method or extrusion is performed so that the inner diameter is larger than the outer diameter of the signal terminal 3a or the DC terminal 3b and the outer diameter is smaller than the inner diameter of the through hole 1b. A glass sealing material 2 molded by a molding method or the like is inserted into the through hole 1 b, and the signal terminal 3 a or the DC terminal 3 b is inserted into the sealing material 2. Then, the member assembled as described above is placed on a receiving jig in which a hole is formed so that the terminal 3 is placed at a predetermined depth at a predetermined position, and the terminal 3 is placed at a predetermined position from above. A heavy stone jig with a through hole through which was inserted was placed. At this time, the sealing material 2 is at least in one of the receiving jig and the weight stone jig so as to form the concave portion 2a so as to surround the terminal 3 at a portion to be a joining end portion of the terminal 3 and the sealing material 2. An annular protrusion is formed so as to surround the terminal 3. Thereafter, the sealing material 2 is melted by heating to a predetermined temperature, whereby the signal terminal 3a or the DC terminal 3b is embedded in the sealing material 2 and insulated from the base body 1 in the through-hole 1b and fixed in an airtight manner. In addition, the sealing material 2 has a structure having a recess 2 a formed so as to surround the terminal 3, and the inner diameter of the annular protrusion is larger than the diameter of the terminal 3. The concave portion 2 a of the stopper 2 is formed so as to be separated from the terminal 3, and has a projecting shape (protruding portion 2 b) in which the periphery of the terminal 3 of the sealing material 2 surrounds the terminal 3. At this time, if the height of the protruding portion 2b is 0.1 mm or more from the bottom surface of the concave portion 2a, the position of the stress applied to the sealing material 2 from the inner wall of the through hole 1b is surely the joining end of the sealing material 2 to the terminal 3 Since it becomes difficult for a crack to enter the sealing material 2 by shifting from the portion, it is preferable.

なお、図3(a)、図7(a)においては、全ての端子3の封止材2の上下面に凹部2aを形成しているが、信号端子3aの中継基板4bとの接続部においては、凹部2aがあるためインピーダンスが大きくなりやすいことで、信号端子3aの基体1の凹部2aが形成されている部位では同軸構造からマイクロストリップ構造への変換にロスが発生しやすくなり、伝達特性が低下するため、図3(b)、図7(b)の例に示すように、少なくとも信号端子3aにおいては、基体1の上面方向には凹部2aを形成せず、下面方向にだけ凹部2aを形成するほうが信号の伝達特性上は好ましい。信号端子3aと封止材2の接合端部を垂直に(ほぼメニスカスを発生させずに)接合するには、受けジグに形成する端子3の挿通用穴のクリアランスを小さく形成することで実施できるが、クリアランスを小さ
くすると作業性が低下するために、例えば以下のようにすれば作業性を低下させずにクリアランスを小さくできるようになるので良い。受けジグは、端子3の熱膨張係数より小さい熱膨張係数を持つ材質で作製すると、常温で部品を組み立てるときには端子3を無理なく挿通できる穴でありながら、封止材2を溶融させる温度では端子3と各ジグの穴の隙間がほとんどなくなるようにできることで、封止材2が各ジグの穴と端子3の間の隙間に流れ込むことで形成されるメニスカスを小さくできるようになる。例えば信号端子3aをFe50Ni(熱膨張係数:9.9×10-6/K)合金のように比較的低熱膨張の材料を用いた場合
でも、受けジグをカーボン(熱膨張係数:4×10-6/K)で作製することで実現することが
できる。この場合には、基体1の下面側の封子材2と端子3の接続端部にだけメニスカスが形成されるので、全ての端子3の封止材2の下面に凹部2aを形成している。
In FIGS. 3A and 7A, the recesses 2a are formed on the upper and lower surfaces of the sealing material 2 of all the terminals 3, but at the connection portion of the signal terminal 3a with the relay substrate 4b. Since the impedance tends to increase due to the presence of the recess 2a, a loss tends to occur in the conversion from the coaxial structure to the microstrip structure at the portion where the recess 2a of the base 1 of the signal terminal 3a is formed. 3 (b) and FIG. 7 (b), at least in the signal terminal 3a, the recess 2a is not formed in the upper surface direction of the base 1, and the recess 2a is only formed in the lower surface direction. Is preferable in terms of signal transfer characteristics. In order to join the joining end portion of the signal terminal 3a and the sealing material 2 vertically (substantially without generating a meniscus), the clearance of the insertion hole of the terminal 3 formed in the receiving jig can be reduced. However, if the clearance is reduced, the workability is lowered. For example, if the following is performed, the clearance can be reduced without reducing the workability. If the receiving jig is made of a material having a thermal expansion coefficient smaller than the thermal expansion coefficient of the terminal 3, it is a hole through which the terminal 3 can be inserted without difficulty when assembling parts at room temperature, but at a temperature at which the sealing material 2 is melted. Since the gap between the hole 3 and each jig hole can be almost eliminated, the meniscus formed by the sealing material 2 flowing into the gap between each jig hole and the terminal 3 can be reduced. For example, even when the signal terminal 3a is made of a relatively low thermal expansion material such as an Fe50Ni (thermal expansion coefficient: 9.9 × 10 −6 / K) alloy, the receiving jig is made of carbon (thermal expansion coefficient: 4 × 10 −6 / K). It can be realized by manufacturing in K). In this case, since the meniscus is formed only at the connection end portion of the sealing material 2 and the terminal 3 on the lower surface side of the base body 1, the recess 2 a is formed on the lower surface of the sealing material 2 of all the terminals 3. .

また、図3(c)、図7(c)に示されているように、円形の貫通孔1bの中心に1本の信号端子3aを封止材2で固定している場合には、封止材2の接合端部にメニスカスが形成され封止材2の薄い層が端子3上に形成されたとしても、応力が基体の円形の貫通孔の内側面から端子に均等に加わるためにクラックは発生し難いために、複数のDC端子3bを形成している貫通孔1bの封止材2だけに凹部2aを形成しても良い。   Further, as shown in FIGS. 3C and 7C, when one signal terminal 3a is fixed to the center of the circular through hole 1b with the sealing material 2, the sealing is performed. Even if a meniscus is formed at the joint end of the stopper 2 and a thin layer of the sealant 2 is formed on the terminal 3, the stress is applied evenly to the terminal from the inner surface of the circular through-hole of the base. Therefore, the recess 2a may be formed only in the sealing material 2 of the through hole 1b forming the plurality of DC terminals 3b.

ここで、図9を参照して説明するように、端子3を同心円状に取り囲む凹部2aと突出部2bにおいては、凹部深さ(H)および凹部の底面と内側の壁面の間の曲率半径(r)、突出高さ(T)と突出径(D)が重要である。凹部深さ(H)とは、凹部2aの外側から凹部の底面までの距離のことをいう。曲率半径(r)とは、凹部2aの底面と内側の壁面の間に形成されている曲面部分の曲面度合いのことをいう。突出高さ(T)とは、凹部2aの底面から突出部2bの上端までの距離のことをいう。突出径(D)とは、突出部2bの直径のことをいう。突出高さ(T)と凹部の内側の壁面との曲率半径(r)の比率は、2<T/rが好ましい。T/r≦2であると、基体1の貫通孔1bの内側面から封止材2に加わる応力が凹部2aの底面から曲率半径(r)に沿って突出部2bの上端まで伝わるために、メニスカスの先端の封止材2の厚みの薄い部位まで応力が加わり封止材2の厚みの薄い部分でクラックが発生し易いが、T/r1が2より大きくなると、凹部2aの底面から曲率半径によって、応力の伝わる高さが制限されるために、メニスカスの先端の封止材2の厚みの薄い部位まで応力が伝わらなくなるために封止材2の厚みの薄い部分でもクラックが発生し難くなる。好ましくは、3<T/r1がより好ましい。また、突出径(
D)は端子3の径をDtとすれば、D−Dt>0.05mmを満足するような突出径(D)が好ましい。D−Dt≦0.05mmとなると、突出部2bの封止材2の厚みが薄くなるので、突出部2bの封止材2の強度が小さくなり、クラックが発生しやすくなる傾向がある。また、フレキシブル基板によって信号端子3aを外部端子に接続することが一般的に行われているが、この場合にフレキシブル基板を封子材2とできるだけ隙間無く接続したほうがインピーダンスの不整合を小さくでき信号伝達の劣化が少なくなるが、図7(c)に示されている封子材2の接合端部に形成されるメニスカスによってフレキシブル基板と封子材2の間に隙間が形成されやすくなるため、図9の例に示すように、突出高さ(T)を封子材2のメニスカスが形成される高さだけ凹部深さ(H)より低くすることで、例えメニスカスが形成されたとしても封子材2とフレキシブル基板との隙間を小さくできる構造とすればよい。また凹部深さ(H)は突出高さ(T)より大きいと、突出部2bが取り扱い時に他の部品とぶつかったりして欠けることが無いのでその点でも好ましい。凹部深さ(H)を突出高さ(T)より大きく形成するには、封止材2を貫通孔1bに加熱接合するときのカーボンジグに形成する円環状の突起部の内径の内側の高さを突起部の外側より高く形成すると、出来上がりの封止材2の突出部2bが凹部2aの周囲より低く形成することができる。
Here, as will be described with reference to FIG. 9, in the recess 2 a and the protrusion 2 b that concentrically surround the terminal 3, the recess depth (H) and the radius of curvature between the bottom surface of the recess and the inner wall surface ( r), the protrusion height (T) and the protrusion diameter (D) are important. The recess depth (H) refers to the distance from the outside of the recess 2a to the bottom surface of the recess. The radius of curvature (r) refers to the degree of curvature of the curved portion formed between the bottom surface of the recess 2a and the inner wall surface. The protrusion height (T) refers to the distance from the bottom surface of the recess 2a to the upper end of the protrusion 2b. The protruding diameter (D) refers to the diameter of the protruding portion 2b. The ratio of the radius of curvature (r) between the protrusion height (T) and the inner wall surface of the recess is preferably 2 <T / r. When T / r ≦ 2, the stress applied to the sealing material 2 from the inner surface of the through hole 1b of the base body 1 is transmitted from the bottom surface of the recess 2a along the radius of curvature (r) to the upper end of the protrusion 2b. Stress is applied to the thin portion of the sealing material 2 at the tip of the meniscus, and cracks are likely to occur in the thin portion of the sealing material 2, but when T / r1 is greater than 2, the radius of curvature starts from the bottom surface of the recess 2a. Therefore, since the height at which the stress is transmitted is limited, the stress is not transmitted to the portion where the thickness of the sealing material 2 at the tip of the meniscus is thin. . Preferably, 3 <T / r1 is more preferable. Also, the protruding diameter (
D) is preferably a protruding diameter (D) that satisfies D−Dt> 0.05 mm, where Dt is the diameter of the terminal 3. When D−Dt ≦ 0.05 mm, the thickness of the sealing material 2 of the protruding portion 2b becomes thin, so that the strength of the sealing material 2 of the protruding portion 2b decreases, and cracks tend to occur. In general, the signal terminal 3a is connected to an external terminal by a flexible board. In this case, the impedance mismatch can be reduced by connecting the flexible board to the sealing material 2 with as little gap as possible. Although the deterioration of the transmission is reduced, a gap is easily formed between the flexible substrate and the sealing material 2 by the meniscus formed at the joining end portion of the sealing material 2 shown in FIG. As shown in the example of FIG. 9, the protrusion height (T) is made lower than the recess depth (H) by the height at which the meniscus of the encapsulant 2 is formed, so that even if the meniscus is formed, the sealing is performed. What is necessary is just to set it as the structure which can make the clearance gap between the child material 2 and a flexible substrate small. Further, if the depth (H) of the recess is larger than the protrusion height (T), the protrusion 2b will not collide with other parts during handling, and this is preferable. In order to form the recess depth (H) larger than the protrusion height (T), the inner height of the inner diameter of the annular projection formed on the carbon jig when the sealing material 2 is heated and joined to the through hole 1b. If the height is formed higher than the outside of the protrusion, the protrusion 2b of the finished sealing material 2 can be formed lower than the periphery of the recess 2a.

このような本実施形態の電子部品搭載用パッケージの搭載部1aに電子部品4を搭載するとともに、基体1の蓋体接合部1cに蓋体5を接合することにより、本実施形態の電子
装置となる。
The electronic component 4 is mounted on the mounting portion 1a of the electronic component mounting package of the present embodiment, and the lid body 5 is joined to the lid joint portion 1c of the base body 1. Become.

本実施形態の電子装置は、上記構成の本実施形態の電子部品搭載用パッケージの搭載部に電子部品4を搭載するとともに、蓋体接合部1cに蓋体5を接合したことから、信頼性が高いものとなる。   The electronic device according to the present embodiment has high reliability because the electronic component 4 is mounted on the mounting portion of the electronic component mounting package according to the present embodiment having the above-described configuration, and the lid 5 is joined to the lid joint 1c. It will be expensive.

電子部品4としては、LD(レーザーダイオード)やPD(フォトダイオ−ド)等の光半導体素子、あるいは半導体集積回路素子を含む半導体素子、あるいは水晶振動子や弾性表面波素子等の圧電素子、あるいは圧力センサー素子,容量素子,抵抗器等が挙げられる。   As the electronic component 4, an optical semiconductor element such as an LD (laser diode) or PD (photodiode), a semiconductor element including a semiconductor integrated circuit element, a piezoelectric element such as a crystal resonator or a surface acoustic wave element, or A pressure sensor element, a capacitive element, a resistor, etc. are mentioned.

回路基板4aおよび中継基板4bの絶縁基板は、酸化アルミニウム(アルミナ:Al)質焼結体,窒化アルミニウム(AlN)質焼結体等のセラミックス絶縁材料等から成り、絶縁基板が例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ(Al)やシリカ(SiO),カルシア(CaO),マグネシア(MgO)等の原料粉末に適当な有機溶剤,溶媒を添加混合して泥漿状とし、これをドクターブレード法やカレンダーロール法等によってシート状に成形してセラミックグリーンシート(以下、グリーンシートともいう)を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することによって製作される。また、その後、必要に応じて絶縁基板の主面に研磨加工を施す場合もある。 The insulating substrates of the circuit board 4a and the relay substrate 4b are made of a ceramic insulating material such as an aluminum oxide (alumina: Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, and the insulating substrate is, for example, oxidized. If it is made of an aluminum sintered body, first add and mix an appropriate organic solvent and solvent to the raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. Then, it is made into a mud shape, and this is formed into a sheet shape by a doctor blade method, a calender roll method or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C. Thereafter, the main surface of the insulating substrate may be polished as necessary.

この絶縁基板の上面に配線導体を蒸着法およびフォトリソグラフィ法を用いて形成することで、回路基板4aおよび中継基板4bとなる。なお、配線導体は、例えば密着金属層、拡散防止層および主導体層が順次積層された3層構造の導体層から成る。また、回路基板4aおよび中継基板4bに形成される高周波信号の通る配線導体については、信号端子3aの貫通孔1b部分と同様に、例えば特性インピーダンスを50Ωに整合させた線路とする。   By forming the wiring conductor on the upper surface of the insulating substrate by using the vapor deposition method and the photolithography method, the circuit substrate 4a and the relay substrate 4b are obtained. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated. Further, the wiring conductor through which the high-frequency signal is formed on the circuit board 4a and the relay board 4b is a line whose characteristic impedance is matched to 50Ω, for example, similarly to the through hole 1b portion of the signal terminal 3a.

密着金属層は、セラミックス等から成る絶縁基板との密着性を良好とするという観点からは、チタン(Ti),クロム(Cr),タンタル(Ta),ニオブ(Nb),ニッケル−クロム(Ni−Cr)合金,窒化タンタル(TaN)等の熱膨張率がセラミックスと近い金属のうち少なくとも1種より成るのが好ましく、その厚みは0.01〜0.2μm程度が
好ましい。密着金属層の厚みが0.01μm未満では、密着金属層を絶縁基板に強固に密着することが困難となる傾向があり、0.2μmを超えると、成膜時の内部応力によって密着金
属層が絶縁基板から剥離し易くなる傾向がある。
From the viewpoint of improving the adhesion with an insulating substrate made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni- It is preferable that at least one kind of metal having a coefficient of thermal expansion close to that of ceramics, such as a Cr) alloy and tantalum nitride (Ta 2 N), and the thickness thereof is preferably about 0.01 to 0.2 μm. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate. If the thickness exceeds 0.2 μm, the adhesion metal layer is insulated by the internal stress during film formation. It tends to become easy to peel off.

また、拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金(Pt),パラジウム(Pd),ロジウム(Rh),ニッケル(Ni),Ni−Cr合金,Ti−W合金等の熱伝導性の良好な金属のうち少なくとも1種より成ることが好ましく、その厚みは0.05〜1μm程度が好ましい。拡散防止層の厚みが0.05μm未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、1μmを超えると、成膜時の内部応力によって拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にNi−Cr合金を用いる場合は、Ni−Cr合金は絶縁基板との密着性が良好なため、密着金属層を省くことも可能である。   In addition, the diffusion preventing layer is made of platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, from the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer. It is preferably made of at least one metal having good thermal conductivity such as Ti—W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion preventing layer is less than 0.05 μm, defects such as pinholes tend to be generated and it becomes difficult to perform the function as the diffusion preventing layer. If the thickness exceeds 1 μm, the diffusion preventing layer is caused by internal stress during film formation. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion preventing layer, the adhesion metal layer can be omitted because the Ni—Cr alloy has good adhesion to the insulating substrate.

さらに、主導体層は、電気抵抗の小さい金(Au),Cu,Ni,銀(Ag)の少なくとも1種より成ることが好ましく、その厚みは0.1〜5μm程度が好ましい。主導体層の
厚みが0.1μm未満では、電気抵抗が大きなものとなって回路基板4aの配線導体に要求
される電気抵抗を満足できなくなる傾向があり、5μmを超えると、成膜時の内部応力によって主導体層が拡散防止層から剥離し易く成る傾向がある。なお、Auは貴金属で高価
であることから、低コスト化の点でなるべく薄く形成することが好ましい。また、Cuは酸化し易いので、その上にNiおよびAuからなる保護層を被覆してもよい。
Furthermore, the main conductor layer is preferably made of at least one of gold (Au), Cu, Ni, and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance tends to be large and the electric resistance required for the wiring conductor of the circuit board 4a tends not to be satisfied. Therefore, the main conductor layer tends to be easily separated from the diffusion preventing layer. Since Au is a noble metal and expensive, it is preferably formed as thin as possible in terms of cost reduction. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

図1、図5に示す例のような場合は、例えば、回路基板4aおよび中継基板4bは、下面の接地導体層の表面に、200〜400℃の融点を有する半田や金(Au)−錫(Sn)等の低融点ろう材を、スクリーン印刷法を用いてろう材ペーストを印刷したり、フォトリソグラフィ法によって低融点ろう材膜を形成したり、低融点ろう材のプリフォームを配置したりして、200〜400℃の温度で加熱することによって第1の基体1に固定される。そして、電子部品4は、搭載部1aに接合された回路基板4aに200〜400℃の融点を有するAu−Sn等のろう材によってろう付けされて固定され、その電極をボンディングワイヤ7を介して回路基板4aの配線導体に接続してこの配線導体と信号端子3aとをボンディングワイヤ7で接続することによって信号端子3aに電気的に接続される。また、例えば、回路基板4aを基体1上に搭載した後に電子部品4を回路基板4a上に搭載する場合は、回路基板4aの固定には金−錫(Au−Sn)合金や金−ゲルマニウム(Au−Ge)合金をろう材として用い、電子部品4の固定には、これらより融点の低い錫−銀(Sn−Ag)合金や錫−銀−銅(Sn−Ag−Cu)合金のろう材や、融点より低い温度で硬化可能なAgエポキシ等の樹脂製の接着剤を用いればよい。また、電子部品4を回路基板4a上に搭載した後に回路基板4aを基体1上に搭載してもよく、その場合は上記とは逆に、回路基板4aを基体1上に搭載する際に用いるろう材の融点の方を低くすればよい。いずれの場合であっても、回路基板4a上や基体1の搭載部1a上にろう材ペーストを周知のスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によってろう材層を形成したり、低融点ろう材のプリフォームを載置するなどすればよい。   In the case of the example shown in FIGS. 1 and 5, for example, the circuit board 4 a and the relay board 4 b are solder or gold (Au) -tin having a melting point of 200 to 400 ° C. on the surface of the ground conductor layer on the lower surface. (Sn) or other low melting point brazing material is printed on the brazing material paste using a screen printing method, a low melting point brazing material film is formed by photolithography, or a low melting point brazing material preform is disposed. And it fixes to the 1st base | substrate 1 by heating at the temperature of 200-400 degreeC. The electronic component 4 is fixed to the circuit board 4a bonded to the mounting portion 1a by brazing with a brazing material such as Au—Sn having a melting point of 200 to 400 ° C., and the electrode is bonded via the bonding wire 7. By connecting to the wiring conductor of the circuit board 4a and connecting the wiring conductor and the signal terminal 3a with the bonding wire 7, they are electrically connected to the signal terminal 3a. Further, for example, when the electronic component 4 is mounted on the circuit board 4a after the circuit board 4a is mounted on the base body 1, gold-tin (Au-Sn) alloy or gold-germanium ( An Au—Ge) alloy is used as a brazing material, and a brazing material of a tin-silver (Sn—Ag) alloy or a tin—silver—copper (Sn—Ag—Cu) alloy having a lower melting point is used for fixing the electronic component 4. Alternatively, an adhesive made of resin such as Ag epoxy that can be cured at a temperature lower than the melting point may be used. Further, after mounting the electronic component 4 on the circuit board 4a, the circuit board 4a may be mounted on the base body 1. In this case, contrary to the above, it is used when mounting the circuit board 4a on the base body 1. The melting point of the brazing material may be lowered. In any case, a brazing material paste is printed on the circuit board 4a or the mounting portion 1a of the base body 1 using a known screen printing method, a brazing material layer is formed by a photolithography method, A preform of a melting point brazing material may be placed.

高出力のLD素子を電子部品4として搭載する場合は、電子部品4をより効果的に冷却して、電子部品4の温度変化によって特性が変化しないように、図1および図2、図5および図6に示す例のように、温度制御素子6を電子部品搭載用パッケージの搭載部1a上に搭載して、その上に電子部品4を搭載すればよい。搭載の方法は、上記と同様に、低融点ろう材によって固定すればよい。   When a high-power LD element is mounted as the electronic component 4, the electronic component 4 is cooled more effectively so that the characteristics do not change due to a temperature change of the electronic component 4. As in the example shown in FIG. 6, the temperature control element 6 may be mounted on the mounting part 1a of the electronic component mounting package, and the electronic component 4 may be mounted thereon. The mounting method may be fixed by a low melting point brazing material as described above.

蓋体5は、平面視で基体1の上面の外周領域の蓋体接合部1cの形状に沿った外形で、基体1の上面の搭載部1aに搭載された電子部品4を覆うような空間を有する形状のものである。電子部品4と対向する部分に光を透過させる窓を設けてもよいし、窓に換えて、または窓に加えて光ファイバおよび戻り光防止用の光アイソレータを接合したものでもよい。   The lid body 5 has an outer shape along the shape of the lid joint portion 1c in the outer peripheral area of the upper surface of the base body 1 in plan view, and covers a space that covers the electronic component 4 mounted on the mounting portion 1a on the upper surface of the base body 1. It has a shape. A window that transmits light may be provided at a portion facing the electronic component 4, or an optical fiber and an optical isolator for preventing return light may be joined instead of or in addition to the window.

蓋体5は、Fe−Ni−Co合金やFe−Ni合金、Fe−Mn合金等の金属から成り、これらの板材にプレス加工や打ち抜き加工等の周知の金属加工方法を施すことによって作製される。蓋体5は、基体1の材料と同程度の熱膨張係数を有するものが好ましく、基体1の材料と同じものを用いるのがより好ましい。蓋体5が窓を有する場合は、電子部品4と対向する部分に孔を設けたものに、平板状やレンズ状のガラス製の窓部材を低融点ガラスなどによって接合する。   The lid 5 is made of a metal such as an Fe—Ni—Co alloy, an Fe—Ni alloy, or an Fe—Mn alloy, and is produced by subjecting these plate materials to a known metal working method such as press working or punching. . The lid 5 preferably has the same thermal expansion coefficient as that of the material of the substrate 1, and more preferably the same material as that of the substrate 1. When the lid 5 has a window, a flat or lens-shaped glass window member is bonded to a portion provided with a hole in the portion facing the electronic component 4 with a low-melting glass or the like.

蓋体5の基体1の蓋体接合部1cへの接合は、シーム溶接やYAGレーザー溶接等の溶接またはAu−Snろう材等のろう材によるろう付け等のろう接によって行なわれる。   The lid body 5 is joined to the lid joint portion 1c of the base body 1 by welding such as seam welding or YAG laser welding or brazing with a brazing material such as an Au-Sn brazing material.

1・・・・・基体
1a・・・・搭載部
1b・・・・貫通孔
1c・・・・蓋体接合部
2・・・・・封止材
2a・・・・凹部
2b・・・・突出部
3・・・・・端子
3a・・・・信号端子
3b・・・・DC端子
4・・・・・電子部品
4a・・・・回路基板
4b・・・・中継基板
5・・・・・蓋体
6・・・・・温度制御素子
7・・・・・ボンディングワイヤ
8・・・・・モニタPD
9・・・・・反射鏡
10・・・・・温度モニタ素子
DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Mounting part 1b ... Through-hole 1c ... Lid joint part 2 ... Sealing material 2a ... Recess 2b ... Projection part 3... Terminal 3a... Signal terminal 3b... DC terminal 4... Electronic component 4a ... Circuit board 4b ... Relay board 5. -Lid 6 ... Temperature control element 7 ... Bonding wire 8 ... Monitor PD
9: Reflector
10 ... Temperature monitor element

Claims (3)

上面および下面を有しており、前記上面に設けられた電子部品の搭載部と前記上面から前記下面にかけて設けられた貫通孔とを含む基体と、
前記貫通孔に充填された封止材と、
該封止材を貫通して前記基体に固定されており、前記基体の前記上面から上方へ突出している上端と前記基体の前記下面から下方へ突出している下端とを有しており、前記電子部品が電気的に接続される端子とを備えており、
前記封止材は、前記端子を取り囲むように形成された凹部を有していることを特徴とする電子部品搭載用パッケージ。
A base including an upper surface and a lower surface, the electronic component mounting portion provided on the upper surface, and a through hole provided from the upper surface to the lower surface;
A sealing material filled in the through hole;
The electronic device is fixed to the base body through the sealing material, and has an upper end projecting upward from the upper surface of the base body and a lower end projecting downward from the lower surface of the base body. And a terminal to which the component is electrically connected,
The electronic component mounting package, wherein the sealing material has a recess formed so as to surround the terminal.
前記凹部は、前記端子から離間して形成されていることを特徴とする請求項1に記載の電子部品搭載用パッケージ。   The electronic component mounting package according to claim 1, wherein the recess is formed apart from the terminal. 請求項1または請求項2に記載された電子部品搭載用パッケージと、
該電子部品搭載用パッケージの前記搭載部に搭載された電子部品と、
該電子部品および前記貫通孔を覆うように前記基体の前記上面に接合された蓋体とを備えていることを特徴とする電子装置。
The electronic component mounting package according to claim 1 or 2,
An electronic component mounted on the mounting portion of the electronic component mounting package;
An electronic apparatus comprising: a lid body joined to the upper surface of the base so as to cover the electronic component and the through hole.
JP2011096263A 2011-04-22 2011-04-22 Electronic component mounting package and electronic device using the same Withdrawn JP2012227482A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112585743A (en) * 2018-12-26 2021-03-30 京瓷株式会社 Wiring substrate, package for housing electronic component, and electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112585743A (en) * 2018-12-26 2021-03-30 京瓷株式会社 Wiring substrate, package for housing electronic component, and electronic device
CN112585743B (en) * 2018-12-26 2023-10-13 京瓷株式会社 Wiring substrate, electronic component housing package, and electronic device

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