JP2012222303A - テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 - Google Patents

テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Download PDF

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Publication number
JP2012222303A
JP2012222303A JP2011089539A JP2011089539A JP2012222303A JP 2012222303 A JP2012222303 A JP 2012222303A JP 2011089539 A JP2011089539 A JP 2011089539A JP 2011089539 A JP2011089539 A JP 2011089539A JP 2012222303 A JP2012222303 A JP 2012222303A
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JP
Japan
Prior art keywords
terahertz wave
electrodes
pulsed light
light
electrode
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Pending
Application number
JP2011089539A
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English (en)
Japanese (ja)
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JP2012222303A5 (enExample
Inventor
Hiroto Tomioka
紘斗 冨岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2011089539A priority Critical patent/JP2012222303A/ja
Priority to US13/443,414 priority patent/US8633442B2/en
Priority to CN2012101052095A priority patent/CN102738687A/zh
Publication of JP2012222303A publication Critical patent/JP2012222303A/ja
Publication of JP2012222303A5 publication Critical patent/JP2012222303A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0057—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Studio Devices (AREA)
JP2011089539A 2011-04-13 2011-04-13 テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Pending JP2012222303A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011089539A JP2012222303A (ja) 2011-04-13 2011-04-13 テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
US13/443,414 US8633442B2 (en) 2011-04-13 2012-04-10 Terahertz wave generating device, camera, imaging device, and measuring device
CN2012101052095A CN102738687A (zh) 2011-04-13 2012-04-11 太赫兹波产生装置、相机、成像装置以及测量装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011089539A JP2012222303A (ja) 2011-04-13 2011-04-13 テラヘルツ波発生装置、カメラ、イメージング装置および計測装置

Publications (2)

Publication Number Publication Date
JP2012222303A true JP2012222303A (ja) 2012-11-12
JP2012222303A5 JP2012222303A5 (enExample) 2014-05-22

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JP2011089539A Pending JP2012222303A (ja) 2011-04-13 2011-04-13 テラヘルツ波発生装置、カメラ、イメージング装置および計測装置

Country Status (3)

Country Link
US (1) US8633442B2 (enExample)
JP (1) JP2012222303A (enExample)
CN (1) CN102738687A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161450A (ja) * 2016-03-11 2017-09-14 国立研究開発法人情報通信研究機構 テラヘルツ波イメージング装置
JP2021081443A (ja) * 2021-02-24 2021-05-27 キヤノン株式会社 画像取得装置、これを用いた画像取得方法及び照射装置
JP2023510435A (ja) * 2019-12-20 2023-03-14 ヘルムート・フィッシャー・ゲーエムベーハー・インスティテュート・フューア・エレクトロニク・ウント・メステクニク テラヘルツ放射線を送信および／または受信するための装置、およびその使用
JP2023056674A (ja) * 2021-10-08 2023-04-20 キヤノン株式会社 検査システム及びコンピュータプログラム
US11646329B2 (en) 2016-11-28 2023-05-09 Canon Kabushiki Kaisha Image capture device, method of capturing image with the same, and irradiation device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010070257A2 (en) 2008-12-19 2010-06-24 Radio Physics Solutions Ltd A method for formation of radiometric images and an antenna for implementation of the method
GB201015207D0 (en) * 2010-09-13 2010-10-27 Radio Physics Solutions Ltd Improvements in or relating to millimeter and sub-millimeter mave radar-radiometric imaging
GB2496835B (en) 2011-09-23 2015-12-30 Radio Physics Solutions Ltd Package for high frequency circuits
KR101897257B1 (ko) * 2012-05-14 2018-09-11 한국전자통신연구원 광 검출기 및 그를 구비한 광학 소자
US12360503B2 (en) * 2020-08-25 2025-07-15 Building Robotics, Inc. Light fixture of building automation system

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JPH02221902A (ja) * 1989-02-22 1990-09-04 Hitachi Cable Ltd ガラス導波路
JPH04213884A (ja) * 1990-02-01 1992-08-04 Corning Inc 誘導放出型光信号増幅器
JP2000338453A (ja) * 1999-05-26 2000-12-08 Agency Of Ind Science & Technol 半導体光パルス圧縮導波路素子
JP2003152252A (ja) * 2001-11-09 2003-05-23 Nec Eng Ltd 光増幅素子
JP2005317669A (ja) * 2004-04-27 2005-11-10 Research Foundation For Opto-Science & Technology テラヘルツ波発生装置及びそれを用いた計測装置
JP2009105102A (ja) * 2007-10-19 2009-05-14 Panasonic Corp テラヘルツ波エミッタ装置
JP2009265361A (ja) * 2008-04-25 2009-11-12 Institute Of Physical & Chemical Research テラヘルツ波ビーム走査装置と方法
JP2011179989A (ja) * 2010-03-01 2011-09-15 Okayama Univ 電磁波波面整形素子及びそれを備えた電磁波イメージング装置、並びに電磁波イメージング方法

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JP3919344B2 (ja) 1998-07-27 2007-05-23 浜松ホトニクス株式会社 テラヘルツ波発生装置
DE102006014801A1 (de) * 2006-03-29 2007-10-04 Rwth Aachen University THz-Antennen-Array, System und Verfahren zur Herstellung eines THz-Antennen-Arrays
JP2008277565A (ja) 2007-04-27 2008-11-13 Matsushita Electric Ind Co Ltd テラヘルツ波発生装置

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH02221902A (ja) * 1989-02-22 1990-09-04 Hitachi Cable Ltd ガラス導波路
JPH04213884A (ja) * 1990-02-01 1992-08-04 Corning Inc 誘導放出型光信号増幅器
JP2000338453A (ja) * 1999-05-26 2000-12-08 Agency Of Ind Science & Technol 半導体光パルス圧縮導波路素子
JP2003152252A (ja) * 2001-11-09 2003-05-23 Nec Eng Ltd 光増幅素子
JP2005317669A (ja) * 2004-04-27 2005-11-10 Research Foundation For Opto-Science & Technology テラヘルツ波発生装置及びそれを用いた計測装置
JP2009105102A (ja) * 2007-10-19 2009-05-14 Panasonic Corp テラヘルツ波エミッタ装置
JP2009265361A (ja) * 2008-04-25 2009-11-12 Institute Of Physical & Chemical Research テラヘルツ波ビーム走査装置と方法
JP2011179989A (ja) * 2010-03-01 2011-09-15 Okayama Univ 電磁波波面整形素子及びそれを備えた電磁波イメージング装置、並びに電磁波イメージング方法

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Title
Y. LEE: ""Pulse compression using coupled-waveguide structures as highly dispersive elements"", APPLIED PHYSICS LETTERS, vol. 73, no. 19, JPN7015002709, 9 November 1998 (1998-11-09), pages 2715 - 2717, XP000788552, ISSN: 0003166316, DOI: 10.1063/1.122568 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161450A (ja) * 2016-03-11 2017-09-14 国立研究開発法人情報通信研究機構 テラヘルツ波イメージング装置
US11646329B2 (en) 2016-11-28 2023-05-09 Canon Kabushiki Kaisha Image capture device, method of capturing image with the same, and irradiation device
JP2023510435A (ja) * 2019-12-20 2023-03-14 ヘルムート・フィッシャー・ゲーエムベーハー・インスティテュート・フューア・エレクトロニク・ウント・メステクニク テラヘルツ放射線を送信および／または受信するための装置、およびその使用
JP7610525B2 (ja) 2019-12-20 2025-01-08 ヘルムート・フィッシャー・ゲーエムベーハー・インスティテュート・フューア・エレクトロニク・ウント・メステクニク テラヘルツ放射線を送信および／または受信するための装置、およびその使用
JP2021081443A (ja) * 2021-02-24 2021-05-27 キヤノン株式会社 画像取得装置、これを用いた画像取得方法及び照射装置
JP7167211B2 (ja) 2021-02-24 2022-11-08 キヤノン株式会社 画像取得装置、これを用いた画像取得方法及び照射装置
JP2023056674A (ja) * 2021-10-08 2023-04-20 キヤノン株式会社 検査システム及びコンピュータプログラム

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Publication number Publication date
US8633442B2 (en) 2014-01-21
CN102738687A (zh) 2012-10-17
US20120261576A1 (en) 2012-10-18

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