JP2012212761A - Metal foil with electrical resistance film and manufacturing method therefor - Google Patents

Metal foil with electrical resistance film and manufacturing method therefor Download PDF

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JP2012212761A
JP2012212761A JP2011077230A JP2011077230A JP2012212761A JP 2012212761 A JP2012212761 A JP 2012212761A JP 2011077230 A JP2011077230 A JP 2011077230A JP 2011077230 A JP2011077230 A JP 2011077230A JP 2012212761 A JP2012212761 A JP 2012212761A
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metal foil
film
electric resistance
resistance film
metal
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Toshio Kurosawa
俊雄 黒澤
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JX Nippon Mining and Metals Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a built-in resistor in which variation in electrical resistance is small for variation in temperature.SOLUTION: In the metal foil with an electrical resistance film, a film having an electrical resistivity higher than that of the metal foil is formed on the metal foil. The electrical resistance film has a multilayer structure of an oxide based resistance film composed of CrSiO or NiCrSiO, and a metal Cr film the variation in electrical resistance of which is small for variation in temperature. Since an electrical resistor provided on the metal foil has a multilayer structure, good temperature characteristics are ensured even in a state of relatively high resistance.

Description

多くの電子装置は機能の異なる部品のハイブリットで構成されている。これらの電子装置は近年、実装面においても小型軽量化の要求があり基板面積の縮小化、あるいは能動デバイスの大規模化に対応した各部品の効率的配置が要求されている。特に抵抗、コンデンサー等の単体部品は空間的なスペースを広く取るため場所の取らない薄膜抵抗体を利用する方法が開発されている。本発明は、金属箔に電気抵抗からなる膜を形成した電気抵抗膜付金属箔に関する。   Many electronic devices are composed of hybrid parts having different functions. In recent years, these electronic devices have been required to be small and light in terms of mounting, and there has been a demand for efficient arrangement of components corresponding to a reduction in substrate area or an increase in the scale of active devices. In particular, a single component such as a resistor and a capacitor has been developed to use a thin film resistor that does not take up space in order to take a wide space. The present invention relates to a metal foil with an electric resistance film in which a film made of electric resistance is formed on a metal foil.

プリント回路基板の配線材料として、一般に金属箔、特に銅箔が使用されている。この銅箔は、その製造法により電解銅箔と圧延銅箔に分けられる。この銅箔は、厚さは5μmの非常に薄い銅箔から140μm程度の厚い銅箔まで、その範囲を任意に調整することができる。   Generally as a wiring material of a printed circuit board, metal foil, especially copper foil is used. This copper foil is divided into an electrolytic copper foil and a rolled copper foil depending on the production method. The range of the copper foil can be arbitrarily adjusted from a very thin copper foil having a thickness of 5 μm to a thick copper foil having a thickness of about 140 μm.

これら銅箔箔は、エポキシやポリイミド等の樹脂からなる基板に接合され、プリント回路用基板として使用される。銅箔には基板となる樹脂との接着強度を十分確保することが求められるが、その為に、電解銅箔は一般に製箔時に形成されるマット面と呼ばれる粗面を利用し、更にその上に表面粗化処理を施して使用する。又、圧延銅箔も同様にその表面に粗化処理を施して使用される。   These copper foil foils are bonded to a substrate made of a resin such as epoxy or polyimide and used as a printed circuit board. Copper foils are required to have sufficient adhesive strength with the resin used as a substrate. For this reason, electrolytic copper foils generally use a rough surface called a matte surface that is formed during foil making. Is used after surface roughening treatment. Similarly, rolled copper foil is used after its surface is roughened.

最近、配線材料である銅箔に、更に電気抵抗材料からなる薄膜層を形成することが提案されている(特許文献1、2参照)。電子回路基板には、電気抵抗素子が不可欠であるが、抵抗層を備えた金属箔を使用すれば、金属箔に形成された電気抵抗膜層を、塩化第二銅等のエッチング溶液を用いて、抵抗素子を露出させるだけでよい。したがって、抵抗の基板内蔵化により、従来のようにチップ抵抗素子を、半田接合法を用いて基板上に表面実装する手法しかなかったものに比べ、限られた基板の表面積を有効に利用することが可能となる。   Recently, it has been proposed to form a thin film layer made of an electric resistance material on a copper foil as a wiring material (see Patent Documents 1 and 2). An electric resistance element is indispensable for an electronic circuit board. However, if a metal foil provided with a resistance layer is used, an electric resistance film layer formed on the metal foil is removed using an etching solution such as cupric chloride. It is only necessary to expose the resistance element. Therefore, by incorporating the resistor into the substrate, the limited surface area of the substrate can be effectively used compared to the conventional method of mounting the chip resistor element on the substrate using the solder bonding method. Is possible.

また、多層基板内部に抵抗素子を形成することによる設計上の制約が少なくなり、回路長の短縮が可能となることにより電気的特性の改善も図れる。したがって、抵抗層を備えた金属箔を使用すれば、半田接合が不要となるか又は大きく軽減され、軽量化・信頼性向上が図れる。このように、電気抵抗膜を内蔵した基板は多くの利点を持っている。   In addition, design restrictions due to the formation of resistance elements inside the multilayer substrate are reduced, and the circuit length can be shortened, so that the electrical characteristics can be improved. Therefore, if a metal foil provided with a resistance layer is used, solder bonding is unnecessary or greatly reduced, and weight reduction and reliability can be improved. As described above, a substrate incorporating an electric resistance film has many advantages.

電気抵抗膜として従来利用されているNiCr、NiCrAlSi等は抵抗が低いという問題がある。そのため、近年抵抗の高い物が要求されており、その材料物質としてCrSiO及びNiCrSiO等が開発されている。
しかし、これらの材料は温度変化に対して抵抗の変化が大きく、実装したときの不安定要因となるという新たな問題が発生している。このため、温度変化の小さい電気抵抗体が要求されている。
NiCr, NiCrAlSi, and the like conventionally used as an electric resistance film have a problem of low resistance. Therefore, in recent years, a material having high resistance is required, and CrSiO, NiCrSiO, and the like have been developed as material materials.
However, there is a new problem that these materials have a large resistance change with respect to a temperature change and become an unstable factor when mounted. For this reason, an electrical resistor having a small temperature change is required.

特許第3311338号公報Japanese Patent No. 331338 特許第3452557号公報Japanese Patent No. 3425557

本願発明は、従来利用されている内蔵抵抗体の上記のような問題に鑑み、金属箔の上に設ける電気抵抗体を多層構造とし、抵抗が比較的高い状態でも温度特性の良い、すなわち温度の変化に対して、電気抵抗の変化が小さい内蔵抵抗体を提供する内蔵抵抗体を提供することを課題とする。   In view of the above-described problems of a built-in resistor that has been used in the present invention, the electric resistor provided on the metal foil has a multi-layer structure, and has a good temperature characteristic even in a relatively high resistance state, that is, the temperature It is an object of the present invention to provide a built-in resistor that provides a built-in resistor with a small change in electrical resistance with respect to the change.

本発明は、この内蔵抵抗体の温度特性を改善できる新しい構造を提供できるとの知見を得た。   The present invention has found that a new structure capable of improving the temperature characteristics of the built-in resistor can be provided.

この知見に基づき、本発明は、
1)金属箔上に、該金属箔より電気抵抗率の高い膜を有する電気抵抗膜付金属箔であって、該電気抵抗膜は、CrSiO又はNiCrSiOからなる酸化物系抵抗膜と温度変化に対して電気抵抗の変化が少ない金属Cr膜との多層構造を有することを特徴とする電気抵抗膜付金属箔、を提供する。
Based on this finding, the present invention
1) A metal foil with an electric resistance film having a film having a higher electric resistivity than the metal foil on the metal foil, the electric resistance film being an oxide-based resistance film made of CrSiO or NiCrSiO, and a temperature change And a metal foil with an electric resistance film, characterized in that it has a multilayer structure with a metal Cr film with little change in electric resistance.

また、本発明は、
2)電気抵抗膜は、前記酸化物系抵抗膜と温度変化に対して電気抵抗の変化が少ない金属Cr膜との2層構造を有することを特徴とする上記1)記載の電気抵抗膜付金属箔、を提供する、を提供する。
The present invention also provides:
2) The metal with an electric resistance film according to the above 1), wherein the electric resistance film has a two-layer structure of the oxide resistance film and a metal Cr film with little change in electric resistance with respect to temperature change. Foil, provide, provide.

また、本発明は、
3)電気抵抗膜は、前記酸化物系抵抗膜の両面に温度変化に対して、電気抵抗の変化が少ない金属膜を設けたサンドイッチ構造を有することを特徴とする上記1)又は2)記載の電気抵抗膜付金属箔、を提供する。
The present invention also provides:
3) The electrical resistance film has a sandwich structure in which a metal film having a small change in electrical resistance with respect to a temperature change is provided on both surfaces of the oxide resistance film, according to the above 1) or 2) A metal foil with an electric resistance film is provided.

また、本発明は、
4)前記金属箔が、銅または銅合金箔であることを特徴とする上記1)〜3)のいずれか一項に記載の電気抵抗膜付金属箔、を提供する。
The present invention also provides:
4) The metal foil with an electric resistance film according to any one of 1) to 3) above, wherein the metal foil is a copper or copper alloy foil.

また、本発明は、
5)真空装置内に電気抵抗材料からなるカソードを配置し、金属箔をカソードに対面させて搬送しつつ、カソードをターゲットとしてスパッタリングし、該金属箔上にターゲット材を成膜する電気抵抗膜付金属箔の製造方法であって、金属箔に対面させて、少なくとも2つ以上のカソードを並置し、金属箔上に電気抵抗膜と温度変化に対して電気抵抗の変化が少ない金属膜を順次成膜することを特徴とする電気抵抗膜付金属箔の製造方法、を提供する。
The present invention also provides:
5) A cathode made of an electric resistance material is placed in a vacuum apparatus, and the metal foil is transported while facing the cathode, and the cathode is used as a target for sputtering, and an electric resistance film is formed on the metal foil. A method for producing a metal foil, wherein at least two or more cathodes are juxtaposed to face the metal foil, and an electric resistance film and a metal film with little change in electric resistance with respect to temperature change are sequentially formed on the metal foil. There is provided a method for producing a metal foil with an electric resistance film, characterized by forming a film.

また、本発明は、
6)前記金属箔が銅または銅合金箔であり、前記電気抵抗膜がCrSiO又はNiCrSiOからなる酸化物系抵抗膜であり、温度変化に対して電気抵抗の変化が少ない金属膜が、Cr膜であることを特徴とする上記5)記載の電気抵抗膜付金属箔の製造方法、を提供する。
The present invention also provides:
6) The metal foil is copper or a copper alloy foil, the electric resistance film is an oxide-based resistance film made of CrSiO or NiCrSiO, and the metal film having a small change in electric resistance with respect to a temperature change is a Cr film. There is provided a method for producing a metal foil with an electric resistance film as described in 5) above.

本発明は、金属箔の上に設ける電気抵抗体を多層構造とし、抵抗が比較的高い状態でも温度特性の良い、すなわち温度の変化に対して、電気抵抗の変化が小さい内蔵抵抗体を提供することができる大きな効果を得ることができる。
これによって、より高い電気抵抗膜層を金属箔に内蔵させることができ、回路設計の際に、新たに別の電気抵抗素子を単独に形成する必要がなく、金属箔に形成された電気抵抗膜層を、塩化第二銅等のエッチング溶液を用いて、抵抗素子を露出させるだけでよいので、半田接合が不要となるか又は大きく軽減され、実装工程が著しく簡素化されるという効果を有する。
The present invention provides a built-in resistor having a multilayer structure for an electric resistor provided on a metal foil and having good temperature characteristics even in a relatively high resistance state, that is, a small change in electric resistance with respect to a change in temperature. A great effect can be obtained.
As a result, a higher electric resistance film layer can be built in the metal foil, and there is no need to separately form another electric resistance element when designing the circuit, and the electric resistance film formed on the metal foil. Since the layer only needs to expose the resistance element by using an etching solution such as cupric chloride, solder bonding becomes unnecessary or greatly reduced, and the mounting process is remarkably simplified.

さらに、実装部品や半田数が低減される結果、スペースが拡張でき小型軽量になるという利点もある。これによって回路設計の自由度を向上させることができる。また、このように金属箔により高い抵抗体を内蔵させることにより、多くの利点を得ることができる効果を備えている。   Furthermore, as a result of the reduction in the number of mounted parts and solder, there is an advantage that the space can be expanded and the size and weight can be reduced. As a result, the degree of freedom in circuit design can be improved. Further, by incorporating a high resistor in the metal foil in this way, it has an effect that many advantages can be obtained.

本発明の抵抗内蔵金属箔の例を示す説明図であるIt is explanatory drawing which shows the example of metal foil with a built-in resistance of this invention. 従来の抵抗層付金属箔の構造の例を示す説明図である。It is explanatory drawing which shows the example of the structure of the conventional metal foil with a resistance layer. 図2の断面を示す図である。It is a figure which shows the cross section of FIG.

薄膜抵抗体を実装するときの模式図を、図2に、図3とその断面を示す。
1aは薄膜抵抗体、1bは金属箔 ボンディングパット、基板となる絶縁体1cへ抵抗内蔵金属箔を貼り付け、フォトエッチング技術を利用して金属箔と不要抵抗体を除去することによって図2の構造が作られる。
従来1aの薄膜抵抗体はCrSiOもしくはNiCrSiO等が利用され、金属箔を巻取りながらその表面へスパッタリング法により作り付けられる。このNiCrSiOの抵抗温度係数(1°C当りの抵抗変化率)は、150ppm程度であり、温度変化に対して電気抵抗の低下が大きいという問題があった。
FIG. 2 shows a schematic diagram when a thin film resistor is mounted, and FIG. 3 shows a cross section thereof.
1a is a thin film resistor, 1b is a metal foil bonding pad, a metal foil with a built-in resistor is attached to an insulator 1c to be a substrate, and the structure shown in FIG. Is made.
Conventional thin film resistors of 1a are made of CrSiO, NiCrSiO, or the like, and are formed on the surface of the metal foil by sputtering while winding the metal foil. The resistance temperature coefficient (resistance change rate per 1 ° C.) of this NiCrSiO is about 150 ppm, and there is a problem that the electric resistance greatly decreases with respect to the temperature change.

本発明は、従来のこのような欠点を改良する発明である。本発明の抵抗内蔵金属箔の例を、図1に示す。1bはベースの銅箔、1aはNiCrSiOで抵抗の高い抵抗体である。層3aには、金属Crを使用した。
本発明は従来の単層内蔵抵抗体へ3aのCr膜(金属)を付加した2層膜抵抗体により温度特性を改良する方法である。
The present invention is an invention for improving such a conventional defect. An example of the metal foil with a built-in resistor according to the present invention is shown in FIG. 1b is a copper foil of the base, and 1a is a NiCrSiO resistor having high resistance. For the layer 3a, metal Cr was used.
The present invention is a method for improving temperature characteristics by using a two-layer film resistor obtained by adding a 3a Cr film (metal) to a conventional single-layer built-in resistor.

層3aと層1aを反対にしてもよい。また、層3aの金属を層1aの抵抗体でサンドイッチ構造にしてもよい。さらに、この逆のサンドイッチ構造にすることもできる。金属Cr以外の他の金属、例えばバナジウム、タングステン、ジルコニウム、モリブデン、タンタル、ニッケル、クロム等の材料を用いることもできる。   Layer 3a and layer 1a may be reversed. Alternatively, the metal of the layer 3a may be sandwiched with the resistor of the layer 1a. Furthermore, a reverse sandwich structure can be used. A metal other than the metal Cr, for example, a material such as vanadium, tungsten, zirconium, molybdenum, tantalum, nickel, or chromium can also be used.

この抵抗内蔵金属箔を製造に際しては、NiCrSiOターゲットとCrターゲットの2種類を装備した巻取り型スパッタリング装置内で、金属箔を巻取りながら、第一の層NiCrSiOを、数10nm膜付けする。
スパッタリング装置内の真空チャンバーには、アルゴンガスを導入し、圧力を約0.4paに保つ。カソードターゲットに高圧電圧を印加すると、プラズマ状態となりターゲット材が飛び出し、金属箔上へスパッタリングされる。
When manufacturing this metal foil with a built-in resistor, the first layer NiCrSiO is deposited to several tens of nanometers while winding the metal foil in a winding type sputtering apparatus equipped with two types of NiCrSiO target and Cr target.
Argon gas is introduced into the vacuum chamber in the sputtering apparatus and the pressure is maintained at about 0.4 pa. When a high voltage is applied to the cathode target, the target material is ejected and sputtered onto the metal foil.

比較例として、銅箔上にNiCrSiOを単層で40nm成膜した。この抵抗層付き箔をエポキシ樹脂基板上に積層し、エッチングによって、約6mm角の抵抗素子を形成した。その上で、抵抗素子の抵抗値を100°C、24°C、−196°Cで測定し、その結果から抵抗温度係数を算出した。
このときのシート抵抗値は960Ω/sqであり、抵抗温度係数は150ppmであった。
As a comparative example, a NiCrSiO film having a single layer thickness of 40 nm was formed on a copper foil. This foil with a resistance layer was laminated on an epoxy resin substrate, and a resistance element of about 6 mm square was formed by etching. Then, the resistance value of the resistance element was measured at 100 ° C., 24 ° C., and −196 ° C., and the temperature coefficient of resistance was calculated from the result.
The sheet resistance at this time was 960 Ω / sq, and the temperature coefficient of resistance was 150 ppm.

これに対し実施例として、第一の層NiCrSiOを金属箔に約16nm成膜した後、連続して第二層目に、Crを約8.5nm膜付けし、比較例と同様に積層・素子形成・抵抗値測定を実施した。このときのCr/NiCrSiOの2層でのシート抵抗値は901Ω/sqで、また抵抗温度係数は2ppmであり、抵抗層二層化によって、抵抗温度係数の著しい改善が見られた。   On the other hand, as an example, the first layer NiCrSiO was formed on a metal foil with a thickness of about 16 nm, and then the second layer was continuously provided with about 8.5 nm of Cr. The formation and resistance values were measured. At this time, the sheet resistance value in the two layers of Cr / NiCrSiO was 901 Ω / sq and the resistance temperature coefficient was 2 ppm, and the resistance temperature coefficient was remarkably improved by the two-layered resistance layer.

このように、本願発明の薄膜抵抗体を内蔵した金属箔であるが、一方は、CrSiO又はNiCrSiOの酸化物系抵抗材料を選択し、他方の金属層としては、例えばバナジウム、タングステン、ジルコニウム、モリブデン、タンタル、ニッケル、クロム等の材料を用いることもできる。
これら自体もまた、電気抵抗素子の材料として用いられるものであるが、いずれも正の温度抵抗係数を持った材料である。これらの金属材料は、それぞれ単独の膜として又は他の元素との合金膜として使用することができる。
Thus, although it is a metal foil incorporating the thin film resistor of the present invention, one is an oxide-based resistance material of CrSiO or NiCrSiO, and the other metal layer is, for example, vanadium, tungsten, zirconium, molybdenum A material such as tantalum, nickel, or chromium can also be used.
These themselves are also used as materials for electric resistance elements, but all are materials having a positive temperature resistance coefficient. Each of these metal materials can be used as a single film or as an alloy film with other elements.

また、アルミニウム、シリコン、銅、鉄、インジウム、亜鉛、錫等の、比較的電気抵抗の低い材料であっても、それを他の元素と合金化することにより、電気抵抗が高くなる材料であれば、当然使用できる。
例えば、NiCr合金、NiCrAlSi合金等の電気抵抗素子も、前記CrSiO又はNiCrSiOの酸化物系抵抗材料との積層材料として、使用することができる。これらの材料の選択は回路設計に応じて任意に選択することができる。いずれも、酸化物系の抵抗膜と温度変化に対して電気抵抗の変化が少ない金属膜として使用することが可能である。
Even if the material has a relatively low electrical resistance, such as aluminum, silicon, copper, iron, indium, zinc, tin, etc., it should be a material whose electrical resistance is increased by alloying it with other elements. Of course, you can use it.
For example, an electric resistance element such as a NiCr alloy or a NiCrAlSi alloy can also be used as a laminated material with the CrSiO or NiCrSiO oxide resistance material. The selection of these materials can be arbitrarily selected according to the circuit design. Any of them can be used as an oxide-based resistance film and a metal film with little change in electrical resistance with respect to temperature change.

この電気抵抗膜層の形成に際しては、スパッタリング法、真空蒸着法、イオンビームめっき法などの物理的表面処理方法、熱分解法、気相反応法などの化学的表面処理法、又は電気めっき法、無電解めっき法などの湿式表面処理法を用いて形成することができる。   In the formation of this electric resistance film layer, a physical surface treatment method such as sputtering, vacuum deposition, ion beam plating, chemical surface treatment such as thermal decomposition, gas phase reaction, or electroplating, It can be formed using a wet surface treatment method such as an electroless plating method.

一般には、電気めっき法が低コストで製造できる利点がある。また、スパッタリング法は、均一な厚みの膜であり、かつ等方性を備えているので、品質の高い抵抗素子を得ることができるという利点がある。
この電気抵抗膜層の形成は、膜の用途に応じて形成されるものであり、その場合の付着方法又はめっき方法は、その電気抵抗膜層の性質に応じて、適宜選択することが望ましいと言える。
In general, there is an advantage that the electroplating method can be manufactured at low cost. Further, the sputtering method has an advantage that a high-quality resistive element can be obtained because it is a film having a uniform thickness and isotropic.
The formation of the electric resistance film layer is formed according to the use of the film, and it is desirable that the adhesion method or the plating method in that case is appropriately selected according to the properties of the electric resistance film layer. I can say that.

本願発明の抵抗膜層を備えた金属箔としては、銅箔が代表的な材料である。一般に、箔厚が5〜70μmの銅箔、特に5〜35μm銅箔を使用することができる。この銅箔の厚みは、用途に応じて任意に選択できるが、製造条件からくる制約もあり、上記の範囲で製造するのが効率的である。さらに、本願発明は、電解銅箔又は圧延銅箔の粗化処理を施した面に、電気抵抗層を形成することができる。また、電解銅箔のマット面に、さらに節(ふし)こぶ状の粒子を付着させる粗化処理を行うこともできる。   A copper foil is a typical material for the metal foil provided with the resistive film layer of the present invention. In general, a copper foil having a foil thickness of 5 to 70 μm, particularly a 5-35 μm copper foil can be used. Although the thickness of this copper foil can be arbitrarily selected according to a use, there exists a restriction | limiting which comes from manufacturing conditions, and it is efficient to manufacture in said range. Furthermore, this invention can form an electrical resistance layer in the surface which gave the roughening process of the electrolytic copper foil or the rolled copper foil. Further, it is possible to perform a roughening treatment in which knot-shaped particles are further adhered to the mat surface of the electrolytic copper foil.

また、必要に応じて、圧延銅箔への粗化処理も行うこともできる。上記粗化処理によって、Rz0.3〜10.0μmの低プロファイル銅箔又は標準プロファイル等の粗化面を得ることができる。本発明は、これらの金属箔へ2種以上の電気抵抗膜層を内蔵させることができる。   Moreover, the roughening process to a rolled copper foil can also be performed as needed. By the roughening treatment, a rough surface such as a low profile copper foil having a Rz of 0.3 to 10.0 μm or a standard profile can be obtained. In the present invention, two or more kinds of electric resistance film layers can be incorporated in these metal foils.

本発明は、金属箔の上に設ける電気抵抗体を多層構造とし、抵抗が比較的高い状態でも温度特性の良い、すなわち温度の変化に対して、電気抵抗の変化が小さい内蔵抵抗体を提供することができる大きな効果を得ることができる。
これによって、より高い電気抵抗膜層を金属箔に内蔵させることができ、回路設計の際に、新たに別の電気抵抗素子を単独に形成する必要がなく、金属箔に形成された電気抵抗膜層を、塩化第二銅等のエッチング溶液を用いて、抵抗素子を露出させるだけでよいので、半田接合が不要となるか又は大きく軽減され、実装工程が著しく簡素化されるという効果を有する。
さらに、実装部品や半田数が低減される結果、スペースが拡張でき小型軽量になるという利点もある。これによって回路設計の自由度を向上させることができる。また、このように金属箔により高い抵抗体を内蔵させることにより、多くの利点を得ることができる効果を備えているので、プリント回路基板として極めて有用である。
The present invention provides a built-in resistor having a multilayer structure for an electric resistor provided on a metal foil and having good temperature characteristics even in a relatively high resistance state, that is, a small change in electric resistance with respect to a change in temperature. A great effect can be obtained.
As a result, a higher electric resistance film layer can be built in the metal foil, and there is no need to separately form another electric resistance element when designing the circuit, and the electric resistance film formed on the metal foil. Since the layer only needs to expose the resistance element by using an etching solution such as cupric chloride, solder bonding becomes unnecessary or greatly reduced, and the mounting process is remarkably simplified.
Furthermore, as a result of the reduction in the number of mounted parts and solder, there is an advantage that the space can be expanded and the size and weight are reduced. As a result, the degree of freedom in circuit design can be improved. In addition, by incorporating a high resistor in the metal foil in this way, it has an effect of obtaining many advantages, and thus is extremely useful as a printed circuit board.

1a:内蔵された薄膜抵抗体
1b:ベースの金属箔
3a:金属膜
1a: Built-in thin film resistor 1b: Base metal foil 3a: Metal film

Claims (6)

金属箔上に、該金属箔より電気抵抗率の高い膜を有する電気抵抗膜付金属箔であって、該電気抵抗膜は、CrSiO又はNiCrSiOからなる酸化物系抵抗膜と温度変化に対して電気抵抗の変化が少ない金属Cr膜との多層構造を有することを特徴とする電気抵抗膜付金属箔。   A metal foil with an electric resistance film having a film having a higher electric resistivity than the metal foil on the metal foil, the electric resistance film being an oxide-based resistance film made of CrSiO or NiCrSiO and electrically A metal foil with an electric resistance film, characterized by having a multilayer structure with a metal Cr film with little resistance change. 電気抵抗膜は、前記酸化物系抵抗膜と温度変化に対して電気抵抗の変化が少ない金属Cr膜との2層構造を有することを特徴とする請求項1記載の電気抵抗膜付金属箔。   2. The metal foil with an electric resistance film according to claim 1, wherein the electric resistance film has a two-layer structure of the oxide resistance film and a metal Cr film with little change in electric resistance with respect to temperature change. 電気抵抗膜は、前記酸化物系抵抗膜の両面に温度変化に対して、電気抵抗の変化が少ない金属膜を設けたサンドイッチ構造を有することを特徴とする請求項1又は2記載の電気抵抗膜付金属箔。   3. The electric resistance film according to claim 1, wherein the electric resistance film has a sandwich structure in which a metal film having a small change in electric resistance with respect to a temperature change is provided on both surfaces of the oxide-based resistance film. Attached metal foil. 前記金属箔が、銅または銅合金箔であることを特徴とする請求項1〜3のいずれか一項に記載の電気抵抗膜付金属箔。   The metal foil with an electric resistance film according to any one of claims 1 to 3, wherein the metal foil is a copper or copper alloy foil. 真空装置内に電気抵抗材料からなるカソードを配置し、金属箔をカソードに対面させて搬送しつつ、カソードをターゲットとしてスパッタリングし、該金属箔上にターゲット材を成膜する電気抵抗膜付金属箔の製造方法であって、金属箔に対面させて、少なくとも2つ以上のカソードを並置し、金属箔上に電気抵抗膜と温度変化に対して電気抵抗の変化が少ない金属膜を順次成膜することを特徴とする電気抵抗膜付金属箔の製造方法。   A metal foil with an electric resistance film in which a cathode made of an electric resistance material is disposed in a vacuum apparatus, and the metal foil is transported while facing the cathode, and the cathode is used as a target to form a target material on the metal foil. In this manufacturing method, at least two or more cathodes are juxtaposed to face a metal foil, and an electric resistance film and a metal film with little change in electric resistance with respect to temperature change are sequentially formed on the metal foil. The manufacturing method of the metal foil with an electrical resistance film characterized by the above-mentioned. 前記金属箔が銅または銅合金箔であり、前記電気抵抗膜がCrSiO又はNiCrSiOからなる酸化物系抵抗膜であり、温度変化に対して電気抵抗の変化が少ない金属膜が、Cr膜であることを特徴とする請求項5記載の電気抵抗膜付金属箔の製造方法。   The metal foil is copper or a copper alloy foil, the electric resistance film is an oxide-based resistance film made of CrSiO or NiCrSiO, and the metal film having a small change in electric resistance with respect to a temperature change is a Cr film. The method for producing a metal foil with an electric resistance film according to claim 5.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5346408B2 (en) * 2011-03-28 2013-11-20 Jx日鉱日石金属株式会社 Metal foil provided with electric resistance film and method for manufacturing the same
JP2020007601A (en) * 2018-07-05 2020-01-16 住友金属鉱山株式会社 Resistor material, sputtering target for forming resistance thin film, resistance thin film and thin film resistor, and manufacturing method of sputtering target for forming resistance thin film and manufacturing method of resistance thin film
CN111919083A (en) * 2018-04-05 2020-11-10 美蓓亚三美株式会社 Strain gauge and manufacturing method thereof
CN115762938A (en) * 2022-11-28 2023-03-07 北京东方计量测试研究所 Metal foil resistor comprehensive performance improvement method and metal foil resistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5346408B2 (en) * 2011-03-28 2013-11-20 Jx日鉱日石金属株式会社 Metal foil provided with electric resistance film and method for manufacturing the same
CN111919083A (en) * 2018-04-05 2020-11-10 美蓓亚三美株式会社 Strain gauge and manufacturing method thereof
CN111919083B (en) * 2018-04-05 2023-08-22 美蓓亚三美株式会社 Strain gauge and method for manufacturing same
JP2020007601A (en) * 2018-07-05 2020-01-16 住友金属鉱山株式会社 Resistor material, sputtering target for forming resistance thin film, resistance thin film and thin film resistor, and manufacturing method of sputtering target for forming resistance thin film and manufacturing method of resistance thin film
JP7087741B2 (en) 2018-07-05 2022-06-21 住友金属鉱山株式会社 A method for manufacturing a resistor material, a sputtering target for forming a resistance thin film, a resistance thin film and a thin film resistor, and a method for manufacturing a sputtering target for forming a resistance thin film and a method for manufacturing a resistance thin film.
CN115762938A (en) * 2022-11-28 2023-03-07 北京东方计量测试研究所 Metal foil resistor comprehensive performance improvement method and metal foil resistor

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