JP2012209334A - Low-profile millimeter waveband package and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a millimeter waveband package which absorbs a stress and is excellent in heat radiation properties.SOLUTION: There is provided a low-profile millimeter waveband package comprising: a ceramic substrate including a terminal connection pattern, a terminal electrode, and a backside metallic layer; and a conductor base plate. The ceramic substrate and the conductor base plate are joined by soldering at the time of joining of a semiconductor device.

Description

  Embodiments described herein relate generally to a millimeter-wave band thin package and a method for manufacturing the same.

  In the millimeter wave band package, a thin package having a low height from the mounting surface to the terminal surface is required. The manufacturing technology of these packages includes a technology for joining a base metal and a terminal metal by DBC (Direct Bonding Copper) joining, a technology for joining alumina and a base metal by silver brazing material, a ceramic substrate, a base metal and a terminal by DBC joining. Metal bonding technology is common.

JP 2001-156196 A JP 2001-313345 A JP 2002-110835 A

  A ceramic substrate is excellent as a substrate in the millimeter wave band in that the loss (tan δ) is small. The bonding between the ceramic substrate and the base metal that serves as both grounding and heat dissipation requires that the semiconductor device is not peeled off during the mounting process of the semiconductor device. Therefore, a bonding method having a melting point higher than the process temperature is used. Specifically, silver brazing or DBC bonding is used. However, these techniques all involve high-temperature treatment such as about 850 ° C. or about 1000 ° C., so that the ceramic substrate is broken.

  When copper (Cu), which has good heat dissipation, is used as the base metal, the temperature of the silver brazing is as high as 850 ° C., so cracks are generated in the ceramic substrate due to the stress caused by the difference in linear thermal expansion coefficient between the ceramic substrate and Cu. . For this reason, the ceramic substrate could not be made thinner than about 0.3 mm.

  Further, if a material such as CuW having a linear thermal expansion coefficient close to that of the ceramic substrate is used as the base metal, the difference in linear thermal expansion coefficient from the ceramic substrate is small, so that the stress is small and even a thin ceramic substrate is not broken. For this reason, although a ceramic substrate can be formed thinly, heat dissipation is impaired.

  When an adhesive is used as a bonding method at a low temperature, it cannot withstand the process temperature (about 300 ° C.) of AuSn solder for mounting a semiconductor or the like thereafter. That is, if an adhesive is used when bonding the base metal and the ceramic substrate, a low temperature process of about 200 ° C., which is the curing temperature, can be performed, but on the other hand, AuSn solder is used when mounting the semiconductor chip. This is a high temperature process of about 300 ° C., and the allowable temperature of the adhesive is exceeded at this time.

  The problem to be solved by the present embodiment is to provide a thin package for a millimeter-wave band with reduced stress and good heat dissipation and a method for manufacturing the same.

  The thin package for the millimeter wave band according to the present embodiment includes a ceramic substrate provided with a terminal connection pattern, a terminal electrode, and a back metal layer, and a conductor base plate. The ceramic substrate and the conductor base plate are joined by solder when the semiconductor device is joined.

(A) Typical cross-section figure of thin package for millimeter wave band which concerns on 1st Embodiment, (b) The enlarged view of P part of Fig.1 (a). 1 is a schematic bird's-eye view structure for explaining a manufacturing method of a millimeter-wave band thin package according to a first embodiment; (a) an input terminal connection pattern 19a, an output terminal connection pattern 19b, and a gate on the surface of a ceramic substrate 20; Process diagram of forming terminal connection pattern 21g and drain terminal connection pattern 21d, (b) Process diagram of forming RF input terminal electrode 21a, RF output terminal electrode 21b, gate terminal electrode 23G, and drain terminal electrode 23D, (c) The formation process figure of the back surface metal layer 20a. FIG. 2 is a schematic bird's-eye view illustrating a method for manufacturing a millimeter-wave band thin package according to the first embodiment, in which (a) a process diagram for heating the conductor base plate 200 and (b) a solder layer on the conductor base plate 200; Process diagram for forming 200a, (c) Process diagram for joining the ceramic substrate 20 after the process of FIG. 2 (c) on the conductor base plate 200, (d) Semiconductor device 24 on the conductor base plate 200 via the solder layer 200a Process diagram to be mounted on. (A) Typical sectional structure drawing of thin package for millimeter wave band according to second embodiment, (b) Enlarged view of Q portion in FIG. 4 (a). 4 is a schematic bird's-eye view structure for explaining a manufacturing method of a millimeter-wave band thin package according to a second embodiment, wherein (a) an RF input terminal electrode 21a, an RF output terminal electrode 21b, and a gate are formed on the surface of the ceramic substrate 20; The process drawing which arrange | positions the terminal electrode 23G and the drain terminal electrode 23D, and arrange | positions the metal foil 20b on the back surface side of the ceramic substrate 20, (b) RF input terminal electrode 21a and RF output terminal electrode 21b on the surface of the ceramic substrate 20 The process of forming the metal foil 20b on the back surface of the ceramic substrate 20 and forming the back surface metal layer 20a simultaneously with the formation of the gate terminal electrode 23G and the drain terminal electrode 23D. It is a typical bird's-eye view structure explaining the manufacturing method of the thin package for millimeter wave bands which concerns on 2nd Embodiment, Comprising: (a) Process drawing which heats conductor baseplate 200, (b) Solder layer on conductor baseplate 200 FIG. 5C is a process diagram for forming 200a, (c) a process diagram for bonding the ceramic substrate 20 after the process of FIG. 5B on the conductor base plate 200, and (d) a metal foil 20b in which the solder layer 200b is surrounded by the ceramic substrate 20. Process drawing formed on top, (e) Process drawing of mounting the semiconductor device 24 on the conductor base plate 200 via the solder layer 200b. (A) The typical cross-section figure of the thin package for millimeter wave bands which concerns on 3rd Embodiment, (b) The enlarged view of R part of Fig.7 (a). FIG. 6 is a schematic bird's-eye view structure for explaining a third manufacturing method of the millimeter-wave band thin package according to the third embodiment, and (a) an RF input terminal electrode 21a and an RF output terminal electrode on the surface of the ceramic substrate 20; 21b, a gate terminal electrode 23G, and a drain terminal electrode 23D, and a process diagram in which a metal foil 20b is disposed on the back surface of the ceramic substrate 20, (b) an RF input terminal electrode 21a, an RF output terminal on the surface of the ceramic substrate 20. Process of forming the metal foil 20b on the back surface of the ceramic substrate 20 simultaneously with the formation of the electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D, and (c) the metal foil 20b in which the solder layer 200b is surrounded by the ceramic substrate 20 (E) a process diagram for forming the conductor base plate 200c on the solder layer 200b; Process chart of forming a field layer 200d on the conductor base plate 200c, process diagram for implementing the (f) the semiconductor device 24 to the solder layer 200d. (A) The enlarged view of the typical plane pattern structure of the semiconductor device mounted in the thin package for millimeter wave bands which concerns on embodiment, (b) The enlarged view of J part of Fig.9 (a). FIG. 10 is a schematic cross-sectional structure diagram illustrating a configuration example 1 of the semiconductor device mounted on the millimeter-wave band thin package according to the embodiment, taken along line IV-IV in FIG. 9B; FIG. 10 is a configuration example 2 of the semiconductor device mounted on the millimeter-wave band thin package according to the embodiment, and is a schematic cross-sectional configuration diagram taken along line IV-IV in FIG. FIG. 10 is a configuration example 3 of the semiconductor device mounted on the millimeter-wave band thin package according to the embodiment, and is a schematic cross-sectional structure diagram taken along line IV-IV in FIG. 9B; FIG. 10 is a schematic cross-sectional structure diagram taken along line IV-IV in FIG. 9B, which is a configuration example 4 of the semiconductor device mounted on the millimeter-wave band thin package according to the embodiment.

  Next, embodiments will be described with reference to the drawings. In the following, the same elements are denoted by the same reference numerals to avoid duplication of explanation and to simplify the explanation. It should be noted that the drawings are schematic and different from the actual ones. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  The embodiment described below exemplifies an apparatus and a method for embodying the technical idea, and the embodiment does not specify the arrangement of each component as described below. This embodiment can be modified in various ways within the scope of the claims.

[First embodiment]
The schematic cross-sectional structure of the millimeter-wave band thin package 1 according to the first embodiment is represented as shown in FIG. 1A, and the enlarged structure of the P portion in FIG. It is expressed as shown in b).

  In addition, a schematic bird's-eye view structure for explaining the manufacturing method of the millimeter-wave band thin package 1 according to the first embodiment, wherein an input terminal connection pattern 19a, an output terminal connection pattern 19b, and a gate are formed on the surface of the ceramic substrate 20. The step of forming the terminal connection pattern 21g and the drain terminal connection pattern 21d is expressed as shown in FIG. 2A, and includes an RF input terminal electrode 21a, an RF output terminal electrode 21b, a gate terminal electrode 23G, and a drain terminal electrode. The formation process of 23D is expressed as shown in FIG. 2B, and the formation process of the back surface metal layer 20a is expressed as shown in FIG.

  Furthermore, it is a schematic bird's-eye view structure for explaining the manufacturing method of the millimeter-wave band thin package 1 according to the first embodiment, and the step of heating the conductor base plate 200 is represented as shown in FIG. The step of forming the solder layer 200a on the conductor base plate 200 is expressed as shown in FIG. 3B, and the step of bonding the ceramic substrate 20 after the step of FIG. 3C, and the process of mounting the semiconductor device 24 on the conductor base plate 200 via the solder layer 200a is expressed as shown in FIG. Here, FIG. 1A corresponds to a schematic cross-sectional structure taken along the line II of FIG. 3D except for the case 70, the wiring board 60, and the wiring layers 61a and 61b.

  As shown in FIG. 1 to FIG. 3, the thin package 1 for millimeter wave band according to the first embodiment includes terminal connection patterns 19a, 19b, 21g, and 21d, terminal electrodes 21a, 21b, 23G, and 23D, and a back surface metal. A ceramic substrate 20 having a layer 20a and a conductor base plate 200 are included. The ceramic substrate 20 and the conductor base plate 200 are joined by solder 200a when the semiconductor device 24 is joined.

  As shown in FIG. 1 to FIG. 3, the millimeter-wave band thin package 1 according to the first embodiment includes a conductor base plate 200, terminal connection patterns 19 a, 19 b, 21 g, 21 d, and terminal connection patterns 19 a, 19 b, A ceramic substrate 20 disposed on a conductor base plate 200 having terminal electrodes 21a, 21b, 23G, and 23D connected on 21g and 21d on the front surface, a back metal layer 20a on the back surface, and an opening 30; Is provided.

  As shown in FIGS. 1 to 3, the thin millimeter-wave package 1 according to the first embodiment includes a ceramic substrate 20 having an opening 30 and an input terminal connection pattern disposed on the surface of the ceramic substrate 20. 19a, output terminal connection pattern 19b, gate terminal connection pattern 21g, drain terminal connection pattern 21d, and input terminal connection pattern 19a, output terminal connection pattern 19b, gate terminal connection pattern 21g, RF connected on the drain terminal connection pattern 21d The input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, the drain terminal electrode 23D, the back metal layer 20a disposed on the back surface of the ceramic substrate 20, the conductor base plate 200, and the conductor base plate 200. Solder layer 200a, and back surface metal layer 2 on solder layer 200a By joining a, it comprises the opening 30 of the ceramic substrate 20 arranged on the conductor base plate 200, and a semiconductor device 24 disposed on the conductor base plate 200 through a solder layer 200a.

  Further, the millimeter-wave band thin package 1 according to the first embodiment may include a housing 70 having a recess 80 as shown in FIG. Here, the conductor base plate 200 is disposed on the mounting surface 70a on the bottom surface of the recess.

  Further, the millimeter-wave band thin package 1 according to the first embodiment is disposed on an end surface 80a surrounding the recess 80 of the housing 70 as shown in FIGS. 1 (a) and 1 (b). The wiring board 60 and wiring layers 61 a and 61 b arranged on the wiring board 60 may be provided. Here, the RF input terminal electrode 21a and the RF output terminal electrode 21b extend on the wiring substrate 60 and are connected to the wiring layers 61a and 61b. Here, although illustration is omitted, the gate terminal electrode 23G and the drain terminal electrode 23D are similarly extended on the wiring substrate 60 in the direction perpendicular to the paper surface and connected to another wiring layer.

  In addition, as shown in FIG. 1A, the millimeter-wave band thin package 1 according to the first embodiment has a height from the mounting surface 70a to the surface of the wiring layers 61a and 61b. It is equal to the height to the surface of the input terminal connection pattern 19a, the output terminal connection pattern 19b, the gate terminal connection pattern 21g, and the drain terminal connection pattern 21d. In the millimeter wave band thin package 1 according to the first embodiment, as shown in FIG. 1A, the terminal surface 21c on the back surface of the RF input terminal electrode 21a and the RF output terminal electrode 21b is connected to the input terminal. It is in contact with the surface of the pattern 19a / output terminal connection pattern 19b and the surface of the wiring layers 61a / 61b.

  In the millimeter-wave band thin package 1 according to the first embodiment, a thin ceramic substrate 20 that is metallized on the back surface by the back surface metal layer 20a is used. The reason why the ceramic substrate 20 is made thin is from the signal line composed of the input terminal connection pattern 19a and the output terminal connection pattern 19b of the thin package 1 for millimeter wave band to the mounting surface 70a that becomes the ground of the housing 70 as the operating frequency increases. This is because it is necessary to reduce the height t1. For example, if the operating frequency is a 14 GHz band, the height t1 can be tolerated to 2 mm or less, but in the 30 GHz band, the height t1 needs to be 1 mm or less.

This height t1 is represented by the sum of the thickness t _B of the conductor base plate 200, the thickness t _S of the solder layer 200a, the thickness t _M of the back surface metal layer 20a, and the thickness t _A of the ceramic substrate 20. Is done. For example, the thickness t _B of the conductor base plate 200 is about 0.500 mm, the thickness t _S of the solder layer 200a is about 0.100 mm, and the thickness t _M of the back metal layer 20a is determined by a vacuum evaporation method or a plating technique. When formed, the thickness t _A of the ceramic substrate 20 is about 0.002 mm and about 0.200 mm. Therefore, the height t1 is about 0.802 mm, which is 1 mm or less.

(Production method)
As shown in FIG. 2A, the manufacturing method of the millimeter-wave band thin package 1 according to the first embodiment includes an input terminal connection pattern 19a and an output terminal connection on the surface of the ceramic substrate 20 having the opening 30. The step of forming the pattern 19b, the gate terminal connection pattern 21g, and the drain terminal connection pattern 21d and, as shown in FIG. 2B, the input terminal connection pattern 19a, the output terminal connection pattern 19b, the gate terminal connection pattern 21g, and the drain terminal The step of forming the RF input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D on the connection pattern 21d by, for example, silver brazing, as shown in FIG. Forming a back metal layer 20a on the back surface of the ceramic substrate 20.

  Furthermore, the manufacturing method of the millimeter wave band thin package 1 according to the first embodiment includes a step of heating the conductor base plate 200 as shown in FIG. 3A and a step of heating the conductor base plate 200 as shown in FIG. The step of forming the solder layer 200a on the conductor base base plate 200, and as shown in FIG. 3C, the back surface metal layer 20a is joined to the solder layer 200a, and the ceramic substrate 20 is mounted on the conductor base plate 200. 3D, the semiconductor device 24 is mounted on the conductor base plate 200 through the solder layer 200a in the opening 30 as shown in FIG.

  Here, the process of mounting the ceramic substrate 20 on the conductor base plate 200 and the process of mounting the semiconductor device 24 on the conductor base plate 200 are performed simultaneously.

  In addition, as shown in FIG. 1A, the manufacturing method of the millimeter wave band thin package 1 according to the first embodiment includes a step of forming a recess 80 in the housing 70 and a mounting surface 70a on the bottom of the recess. A step of mounting the conductor base plate 200 thereon;

  Further, in the manufacturing method of the millimeter wave band thin package 1 according to the first embodiment, as shown in FIG. 1A, the wiring substrate 60 is formed on the end surface 80 a of the housing 70 surrounding the recess 80. A step of forming wiring layers 61a and 61b on the wiring substrate 60, and a step of connecting the terminal electrode RF input terminal electrode 21a and the RF output terminal electrode 21b extending on the wiring substrate 60 to the wiring layers 61a and 61b. Have In this step, although not shown, the gate terminal electrode 23G and the drain terminal electrode 23D extending on the wiring substrate 60 are also connected to another wiring layer in a direction perpendicular to the paper surface.

  In the thin millimeter-wave band package 1 according to the first embodiment, the input terminal connection pattern 19a, the output terminal connection pattern 19b, the gate terminal connection pattern 21g, the drain terminal connection pattern 21d, and the back metal layer 20a are vacuum It can be formed of a vapor deposition layer or a plating layer.

  For example, AuSn solder can be applied to the solder layer 200a.

Further, in the millimeter wave band thin package 1 according to the first embodiment, the ceramic substrate 20 is formed of any one of aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), or beryllium oxide (BeO). Is possible.

  The conductor base plate 200 applied to the millimeter-wave band thin package 1 according to the first embodiment is made of a metal having high conductivity and heat dissipation, and is formed of, for example, copper (Cu), aluminum (Al), or the like. ing. Furthermore, a plated conductor such as Au, Ni, Ag, Ag—Pt alloy, or Ag—Pd alloy may be formed on the surface of the conductor base plate 200.

  The cap 10 applied to the millimeter-wave band thin package 1 according to the first embodiment has, for example, a key-shaped flat plate shape as shown in FIG. The cap 10 can be formed of, for example, a conductive metal such as aluminum, molybdenum, copper molybdenum alloy, or ceramic.

  Further, the millimeter-wave band thin package 1 according to the first embodiment includes a matching circuit board disposed adjacent to the semiconductor device 24 on the conductor base plate 200 surrounded by the ceramic substrate 20, and a matching circuit board. And a matching wire for connecting the semiconductor device and the matching circuit, and the like.

  In the millimeter waveband thin package 1 according to the first embodiment, the conductor base plate 200, the ceramic substrate 20, the semiconductor device 24, the matching circuit substrate, and the like are disposed on the mounting surface 70a in the recess 80 of the housing 70. After mounting the bonding wire or the like, the cap is fixed with an adhesive or the like and sealed.

  According to the first embodiment, the height t1 from the signal line including the input terminal connection pattern 19a and the output terminal connection pattern 19b to the mounting surface 70a serving as the ground of the housing 70 can be reduced to 1 mm or less. .

  According to the first embodiment, since a thin metal substrate that has been metallized in advance and a conductive base plate having good conductivity and heat dissipation are formed, the stress is reduced and the millimeter wave has good heat dissipation. A thin package for a band can be provided.

[Second Embodiment]
The schematic cross-sectional structure of the millimeter-wave band thin package 1 according to the second embodiment is represented as shown in FIG. 4A, and the enlarged structure of the Q portion in FIG. It is expressed as shown in b).

  Further, it is a schematic bird's-eye view structure for explaining the manufacturing method of the millimeter-wave band thin package 1 according to the second embodiment, and the RF input terminal electrode 21a, the RF output terminal electrode 21b, The process of disposing the gate terminal electrode 23G and the drain terminal electrode 23D and disposing the metal foil 20b on the back surface of the ceramic substrate 20 is expressed as shown in FIG. The process of forming the metal foil 20b on the back surface of the ceramic substrate 20 and the process of forming the back surface metal layer 20a simultaneously with the formation of the terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D are shown in FIG. It is expressed as shown in (b).

  Furthermore, it is a schematic bird's-eye view structure for explaining the manufacturing method of the millimeter-wave band thin package 1 according to the second embodiment, and the step of heating the conductor base plate 200 is represented as shown in FIG. The process of forming the solder layer 200a on the conductor base plate 200 is expressed as shown in FIG. 6B, and the process of joining the ceramic substrate 20 after the process of FIG. The process of forming the solder layer 200b on the metal foil 20b surrounded by the ceramic substrate 20 is represented as shown in FIG. 6D, and the semiconductor device 24 is represented as shown in FIG. The process of mounting on the conductor base plate 200 via the solder layer 200b is expressed as shown in FIG. Here, FIG. 4A corresponds to a schematic cross-sectional structure taken along line II-II in FIG. 6E except for the case 70, the wiring board 60, and the wiring layers 61a and 61b.

  As shown in FIGS. 4 to 6, the thin package 1 for millimeter wave band according to the second embodiment includes a ceramic substrate 20 including terminal electrodes 21 a, 21 b, 23 G, and 23 D and a metal foil 20 b, a conductor It consists of a base plate 200. The ceramic substrate 20 and the conductor base plate 200 are joined by solder 200a when the semiconductor device 24 is joined.

  As shown in FIGS. 4 to 6, the millimeter-wave band thin package 1 according to the second embodiment includes a conductor base plate 200 and terminal electrodes 21a, 21b, 23G, and 23D on the surface, and a metal foil 20b. The ceramic substrate 20 provided on the conductor base plate 200 having the opening 30 is provided on the back surface.

  The millimeter wave band thin package 1 according to the second embodiment includes a ceramic substrate 20 having an opening 30 and an RF input terminal electrode arranged on the surface of the ceramic substrate 20 as shown in FIGS. 21a, RF output terminal electrode 21b, gate terminal electrode 23G, drain terminal electrode 23D, metal foil 20b disposed on the back surface side of the ceramic substrate 20, and back surface disposed on the metal foil 20b from the back surface side of the ceramic substrate 20 The metal layer 20a, the conductor base plate 200, the solder layer 200a disposed on the conductor base plate 200, and the opening 30 of the ceramic substrate 20 disposed on the conductor base plate 200 by bonding the back surface metal layer 20a to the solder layer 200a. The solder layer 200b disposed on the metal foil 20b and the opening 30 of the ceramic substrate 20 Te, and a semiconductor device 24 arranged on the solder layer 200b.

  Moreover, the millimeter-wave band thin package 1 according to the second embodiment may include a housing 70 having a recess 80 as shown in FIG. Here, the conductor base plate 200 is disposed on the mounting surface 70a on the bottom surface of the recess.

  Further, the millimeter-wave band thin package 1 according to the second embodiment is disposed on an end surface 80a surrounding the recess 80 of the housing 70 as shown in FIGS. 4 (a) and 4 (b). The wiring board 60 and wiring layers 61 a and 61 b arranged on the wiring board 60 may be provided. Here, the RF input terminal electrode 21a and the RF output terminal electrode 21b extend on the wiring substrate 60 and are connected to the wiring layers 61a and 61b. Here, although illustration is omitted, the gate terminal electrode 23G and the drain terminal electrode 23D are similarly extended on the wiring substrate 60 in the direction perpendicular to the paper surface and connected to another wiring layer.

  Further, as shown in FIG. 4A, the millimeter wave band thin package 1 according to the second embodiment has a height t2 from the mounting surface 70a to the surfaces of the wiring layers 61a and 61b. To the height of the ceramic substrate 20 surface. In the millimeter wave band thin package 1 according to the second embodiment, as shown in FIG. 4A, the terminal surfaces 21c on the back surfaces of the RF input terminal electrode 21a and the RF output terminal electrode 21b are formed on the ceramic substrate 20. And the surfaces of the wiring layers 61a and 61b.

  In the millimeter wave band thin package 1 according to the second embodiment, a thin ceramic substrate 20 that is metallized on the back surface by a metal foil 20b and a back surface metal layer 20a is used. The reason for thinning the ceramic substrate 20 is from the signal line made up of the RF input terminal electrode 21a and the RF output terminal electrode 21b of the millimeter wave band thin package 1 to the mounting surface 70a serving as the ground of the housing 70 as the operating frequency increases. This is because it is necessary to reduce the height t2. For example, if the operating frequency is a 14 GHz band, the height t2 can be tolerated to 2 mm or less, but in the 30 GHz band, the height t2 needs to be 1 mm or less.

The height t2 includes the thickness t _B of the conductor base plate 200, the thickness t _S of the solder layer 200a, the thickness t _M of the back surface metal layer 20a, the thickness t _C of the metal foil, and the ceramic substrate 20 Expressed as the sum of thickness t _A. For example, the thickness t _B of the conductor base plate 200 is about 0.500 mm, the thickness t _S of the solder layer 200a is about 0.100 mm, and the thickness t _M of the back metal layer 20a is determined by a vacuum evaporation method or a plating technique. When formed, the thickness t _C of the metal foil is about 0.002 mm. For example, in the case of a copper foil made of DBC, the thickness t _A is about 0.050 mm, and the thickness t _A of the ceramic substrate 20 is about 0.200 mm. Therefore, the height t2 is about 0.852 mm, which is 1 mm or less.

(Production method)
As shown in FIG. 5A, the manufacturing method of the millimeter-wave band thin package 1 according to the second embodiment includes an RF input terminal electrode 21a and an RF output terminal on the surface of the ceramic substrate 20 having the opening 30. The step of disposing the electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D and disposing the metal foil 20b on the back side of the ceramic substrate 20, and the ceramic substrate having the opening 30 as shown in FIG. Forming the RF input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D on the surface of the ceramic substrate 20, and forming the metal foil 20b on the back side of the ceramic substrate 20; A step of forming a back metal layer 20a on the metal foil 20b from the back side, and a conductor base plate 20 as shown in FIG. 6B, a step of forming a solder layer 200a on the conductor base plate 200 as shown in FIG. 6B, and a back metal layer 20a bonded to the solder layer 200a as shown in FIG. 6C. The step of mounting the ceramic substrate 20 on the conductor base plate 200 and the step of forming the solder layer 200b on the metal foil 20b in the opening 30 of the ceramic substrate 20 as shown in FIG. 6E, a step of mounting the semiconductor device 24 on the solder layer 200b in the opening 30 of the ceramic substrate 20 is included.

  In addition, as shown in FIG. 4A, the manufacturing method of the millimeter wave band thin package 1 according to the second embodiment includes a step of forming a recess 80 in the housing 70 and a mounting surface 70a on the bottom of the recess. And a step of mounting the conductor base plate 200 thereon.

  Furthermore, in the manufacturing method of the millimeter wave band thin package 1 according to the second embodiment, as shown in FIG. 4A, the wiring substrate 60 is formed on the end surface 80 a of the housing 70 surrounding the recess 80. A process, a process of forming wiring layers 61a and 61b on the wiring board 60, and a process of connecting the RF input terminal electrode 21a and the RF output terminal electrode 21b extending on the wiring board 60 to the wiring layers 61a and 61b. . In this step, although not shown, the gate terminal electrode 23G and the drain terminal electrode 23D extending on the wiring substrate 60 are also connected to another wiring layer in a direction perpendicular to the paper surface.

  In the manufacturing method of the millimeter-wave band thin package 1 according to the second embodiment, the RF input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, the drain terminal electrode 23D, and the metal foil 20b are DBC. Can be formed.

Here, the DBC process will be described. First, after processing the thin ceramic substrate 20 into a desired shape, DBC (Cu foil) that becomes the RF input terminal electrode 21a, RF output terminal electrode 21b, gate terminal electrode 23G, and drain terminal electrode 23D on the upper surface and the metal foil 20b on the lower surface A ceramic substrate 20 is sandwiched between DBC (Cu foil) to be, and a heat treatment step of, for example, about 1100 ° C. is performed. At this time, Cu of DBC melts with alumina (Al ₂ O ₃ ), for example. After the DBC treatment, Au plating may be applied to the Cu portion. Other configurations and steps are the same as those in the first embodiment, and thus redundant description is omitted.

  As shown in FIG. 4A, the structure of the millimeter-wave band thin package 1 according to the second embodiment is the same as that of the first embodiment in that the semiconductor device 24 includes the metal foil 20b. The distance from the bottom surface to the mounting surface 70a of the housing 70 is formed thick. However, since the metal foil 20b is pure Cu formed by DBC, the heat dissipation is not impaired.

  According to the millimeter-wave band thin package according to the second embodiment, the height t2 from the signal line composed of the RF input terminal electrode 21a and the RF output terminal electrode 21b to the mounting surface 70a serving as the ground of the housing 70 is set. The thickness can be reduced to 1 mm or less.

  According to the thin package for millimeter wave band according to the second embodiment, the terminal electrode and the backside metal foil are formed by DBC technology, so that the manufacturing process is simplified and the thin structure of the ceramic substrate is easily realized. can do.

[Third embodiment]
A schematic cross-sectional structure of the millimeter-wave band thin package 1 according to the third embodiment is represented as shown in FIG. 7A, and the enlarged structure of the R portion in FIG. It is expressed as shown in b).

  Further, it is a schematic bird's-eye view structure for explaining a third manufacturing method of the millimeter-wave band thin package according to the third embodiment, and the RF input terminal electrode 21a and the RF output terminal electrode 21b are formed on the surface of the ceramic substrate 20. The step of disposing the gate terminal electrode 23G and the drain terminal electrode 23D and disposing the ceramic substrate 20 on the metal foil 20b is expressed as shown in FIG. The step of forming the metal foil 20b on the back surface of the ceramic substrate 20 simultaneously with the formation of the input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D is as shown in FIG. The step of forming the solder layer 200b on the metal foil 20b surrounded by the ceramic substrate 20 is expressed as shown in FIG. The process of forming the body base plate 200c on the solder layer 200b is represented as shown in FIG. 8D, and the process of forming the solder layer 200d on the conductor base plate 200c is represented as shown in FIG. 8E. Then, the process of mounting the semiconductor device 24 on the solder layer 200d is expressed as shown in FIG. Here, FIG. 7A corresponds to a schematic cross-sectional structure taken along line III-III in FIG. 8F except for the case 70, the wiring board 60, and the wiring layers 61a and 61b.

  As shown in FIGS. 7 to 8, the thin package 1 for millimeter wave band according to the third embodiment includes a ceramic substrate 20 including terminal electrodes 21a, 21b, 23G, and 23D and a metal foil 20b, and a conductor. It consists of a base plate 200c. The ceramic substrate 20 and the conductor base plate 200c are joined by the solder 200b when the semiconductor device 24 is joined.

  As shown in FIGS. 7 to 8, the millimeter wave band thin package 1 according to the third embodiment includes terminal electrodes 21 a, 21 b, 23 G, and 23 D on the front surface, metal foil 20 b on the back surface, and an opening. The ceramic substrate 20 having the portion 30 and the conductor base plate 200c disposed on the metal foil 20b of the opening 30 of the ceramic substrate 20 are provided.

  As shown in FIGS. 7 to 8, the thin millimeter-wave band package 1 according to the third embodiment includes a ceramic substrate 20 having an opening 30 and an RF input terminal electrode disposed on the surface of the ceramic substrate 20. 21a, RF output terminal electrode 21b, gate terminal electrode 23G, drain terminal electrode 23D, metal foil 20b disposed on the back side of the ceramic substrate 20, and disposed on the metal foil 20b in the opening 30 of the ceramic substrate 20. The solder layer 200b, the conductor base plate 200c disposed on the solder layer 200b in the opening 30 of the ceramic substrate 20, and the solder layer disposed on the conductor base plate 200c in the opening 30 of the ceramic substrate 20. 200d and a semiconductor disposed on the solder layer 200d in the opening 30 of the ceramic substrate 20 And a device 24.

  Moreover, the millimeter-wave band thin package 1 according to the third embodiment may include a housing 70 having a recess 80 as shown in FIG. Here, the ceramic substrate 20 is mounted on the mounting surface 70a on the bottom surface of the recess through the metal foil 20b.

  Further, the millimeter-wave band thin package 1 according to the third embodiment is disposed on an end face 80a surrounding the recess 80 of the housing 70 as shown in FIGS. 7 (a) and 7 (b). The wiring board 60 and wiring layers 61 a and 61 b arranged on the wiring board 60 may be provided. Here, the RF input terminal electrode 21a and the RF output terminal electrode 21b extend on the wiring substrate 60 and are connected to the wiring layers 61a and 61b. Here, although illustration is omitted, the gate terminal electrode 23G and the drain terminal electrode 23D are similarly extended on the wiring substrate 60 in the direction perpendicular to the paper surface and connected to another wiring layer.

  Further, in the millimeter wave band thin package 1 according to the third embodiment, as shown in FIG. 7A, the height t3 from the mounting surface 70a to the surface of the wiring layers 61a and 61b is from the mounting surface 70a. It is equal to the height to the surface of the ceramic substrate 20. In the millimeter wave band thin package 1 according to the third embodiment, as shown in FIG. 7A, the terminal surfaces 21c on the back surfaces of the RF input terminal electrode 21a and the RF output terminal electrode 21b are formed on the ceramic substrate 20. And the surfaces of the wiring layers 61a and 61b.

  In the millimeter-wave band thin package 1 according to the third embodiment, a thin ceramic substrate 20 whose back surface is metallized with a metal foil 20b is used. The reason for thinning the ceramic substrate 20 is from the signal line made up of the RF input terminal electrode 21a and the RF output terminal electrode 21b of the millimeter wave band thin package 1 to the mounting surface 70a serving as the ground of the housing 70 as the operating frequency increases. This is because it is necessary to reduce the height t3. For example, if the operating frequency is a 14 GHz band, the height t3 can be tolerated to 2 mm or less, but in the 30 GHz band, the height t3 needs to be 1 mm or less.

This height t3 is represented by the sum of the thickness t _C of the metal foil 20b and the thickness t _A of the ceramic substrate 20. For example, the thickness t _C of the metal foil 20b is about 0.050 mm in the case of a copper foil made of DBC, and the thickness t _A of the ceramic substrate 20 is about 0.500 mm. Accordingly, the height t2 is about 0.550 mm, which is sufficiently 1 mm or less.

In the millimeter wave band thin package 1 according to the third embodiment, the thickness t _A of the ceramic substrate 20 is about 0.500 mm, and a relatively thick substrate is used. ing.

  Further, in order to prevent the thin ceramic substrate 20 from being broken by the high temperature DBC bonding process, the Cu foil is suitably about 50 μm. However, when the thickness is about 50 μm, it does not function as a heat radiating plate for mounting the semiconductor device 24 as a heating element. For this reason, in the millimeter-wave band thin package 1 according to the third embodiment, the conductor base plate 200c having a certain thickness, for example, about 0.500 mm is joined in a relatively low temperature mounting process.

(Production method)
As shown in FIG. 8A, the manufacturing method of the millimeter-wave band thin package 1 according to the third embodiment includes an RF input terminal electrode 21a and an RF output terminal on the surface of the ceramic substrate 20 having the opening 30. The step of disposing the electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D and disposing the metal foil 20b on the back surface side of the ceramic substrate 20, and the ceramic substrate 20 having the opening 30 as shown in FIG. Forming the RF input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, and the drain terminal electrode 23D at the same time, and forming the metal foil 20b on the back side of the ceramic substrate 20, and FIG. As shown in FIG. 8D, a step of forming a solder layer 200b on the metal foil 20b in the opening 30 of the ceramic substrate 20, The step of forming the conductor base plate 200c on the solder layer 200b in the opening 30 of the ceramic substrate 20, and the solder on the conductor base plate 200c in the opening 30 of the ceramic substrate 20 as shown in FIG. A step of forming the layer 200d, and a step of mounting the semiconductor device 24 on the solder layer 200d in the opening 30 of the ceramic substrate 20.

  Further, in the manufacturing method of the millimeter-wave band thin package 1 according to the third embodiment, as shown in FIG. 7A, the step of forming the recess 80 in the housing 70 and the mounting surface 70a on the bottom surface of the recess. And mounting the ceramic substrate 20 on the metal foil 20b.

  Further, in the manufacturing method of the millimeter wave band thin package 1 according to the third embodiment, as shown in FIG. 7A, the wiring substrate 60 is formed on the end surface 80 a of the casing 70 surrounding the recess 80. A process, a process of forming wiring layers 61a and 61b on the wiring board 60, and a process of connecting the RF input terminal electrode 21a and the RF output terminal electrode 21b extending on the wiring board 60 to the wiring layers 61a and 61b. . In this step, although not shown, the gate terminal electrode 23G and the drain terminal electrode 23D extending on the wiring substrate 60 are also connected to another wiring layer in a direction perpendicular to the paper surface.

  In the method for manufacturing the millimeter-wave band thin package 1 according to the third embodiment, the RF input terminal electrode 21a, the RF output terminal electrode 21b, the gate terminal electrode 23G, the drain terminal electrode 23D, and the metal foil 20b are DBC. Can be formed. The DBC process is the same as that in the second embodiment. Other configurations and steps are the same as those in the first embodiment, and thus redundant description is omitted.

  According to the millimeter wave band thin package according to the third embodiment, the height t3 from the signal line formed of the RF input terminal electrode 21a and the RF output terminal electrode 21b to the mounting surface 70a serving as the ground of the housing 70 is set. The thickness can be reduced to 1 mm or less.

  According to the thin package for the millimeter wave band according to the third embodiment, the manufacturing process is simplified and the thin structure of the ceramic substrate is easily realized because the terminal electrode and the back surface metal foil are formed by DBC technology. can do.

  The millimeter wave band thin package according to the third embodiment has a structure in which the conductor base plate is arranged in the opening of the ceramic substrate, so that the thin structure can be easily realized.

(Semiconductor element structure)
An enlarged view of a schematic planar pattern configuration of the semiconductor device 24 mounted on the millimeter-wave band thin package package according to the first to third embodiments is expressed as shown in FIG. An enlarged view of portion J in (a) is expressed as shown in FIG. Moreover, it is the structural examples 1-4 of the semiconductor device 24 mounted in the package which concerns on Embodiment, Comprising: The typical cross-section structural examples 1-4 along the IV-IV line of FIG.9 (b) are respectively FIG. To be expressed as shown in FIG.

  In the semiconductor device 24 mounted on the millimeter-wave band thin package according to the first to third embodiments, the plurality of FET cells FET1 to FET10 are formed of a semi-insulating substrate 110 as shown in FIGS. And a gate finger electrode 124, a source finger electrode 120 and a drain finger electrode 122, each having a plurality of fingers, disposed on the first surface of the semi-insulating substrate 110, and disposed on the first surface of the semi-insulating substrate 110, A plurality of gate terminal electrodes G1, G2,..., G10 formed by bundling a plurality of fingers for each of the gate finger electrode 124, the source finger electrode 120 and the drain finger electrode 122, and a plurality of source terminal electrodes S11, S12, S21, S22. ,..., S101, S102 and drain terminal electrodes D1, D2 .., D10, VIA holes SC11, SC12, SC21, SC22,..., SC101, SC102 disposed under the source terminal electrodes S11, S12, S21, S22,. Arranged on the second surface opposite to the first surface, via the VIA holes SC11, SC12, SC21, SC22,..., SC101, SC102 with respect to the source terminal electrodes S11, S12, S21, S22,. Connected to a ground electrode (not shown).

  The gate terminal electrodes G1, G2,..., G10 are connected with bonding wires, the drain terminal electrodes D1, D2,..., D10 are connected with bonding wires, and the source terminal electrodes S11, S12, S21, S22,. , S101, S102, VIA holes SC11, SC12, SC21, SC22,..., SC101, SC102 are formed, and barriers formed on the inner walls of the VIA holes SC11, SC12, SC21, SC22,. The source terminal electrodes S11, S12, S21, S22,..., S101, and S102 are ground electrodes through a metal layer (not shown) formed on the metal layer (not shown) and the barrier metal layer and filling the VIA hole. (Not shown).

  The semi-insulating substrate 110 is a GaAs substrate, a SiC substrate, a GaN substrate, a substrate in which a GaN epitaxial layer is formed on a SiC substrate, a substrate in which a heterojunction epitaxial layer made of GaN / AlGaN is formed on a SiC substrate, a sapphire substrate, or One of the diamond substrates.

(Structural example 1)
As shown in FIG. 10, the configuration example 1 of the FET cell of the semiconductor device 24 mounted on the millimeter-wave band thin package package according to the first to third embodiments includes a semi-insulating substrate 110 and a semi-insulating substrate. Nitride compound semiconductor layer 112 disposed on conductive substrate 110 and aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) disposed on nitride compound semiconductor layer 112 ) 118, and a source finger electrode (S) 120, a gate finger electrode (G) 124, and a drain finger disposed on the aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118 And an electrode (D) 122. A two-dimensional electron gas (2DEG) layer is formed at the interface between the nitride-based compound semiconductor layer 112 and the aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118. 116 is formed. In the configuration example 1 shown in FIG. 10, a high electron mobility transistor (HEMT) is shown.

(Structural example 2)
As shown in FIG. 11, the configuration example 2 of the FET cell of the semiconductor device 24 mounted on the millimeter-wave band thin package package according to the first to third embodiments includes a semi-insulating substrate 110 and a semi-insulating substrate. Nitride compound semiconductor layer 112 disposed on conductive substrate 110, source region 126 and drain region 128 disposed on nitride compound semiconductor layer 112, and source finger electrode disposed on source region 126 ( S) 120, a gate finger electrode (G) 124 disposed on the nitride-based compound semiconductor layer 112, and a drain finger electrode (D) 122 disposed on the drain region 128. A Schottky contact is formed at the interface between the nitride-based compound semiconductor layer 112 and the gate finger electrode (G) 124. In the configuration example 2 shown in FIG. 11, a metal-semiconductor field effect transistor (MESFET) is shown.

(Structural example 3)
As shown in FIG. 12, the configuration example 3 of the FET cell of the semiconductor device 24 mounted on the millimeter-wave band thin package package according to the first to third embodiments includes a semi-insulating substrate 110 and a semi-insulating substrate. Nitride compound semiconductor layer 112 disposed on conductive substrate 110 and aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) disposed on nitride compound semiconductor layer 112 ) 118, a source finger electrode (S) 120 and a drain finger electrode (D) 122 disposed on an aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118, and aluminum And a gate finger electrode (G) 124 disposed in a recess portion on the gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118. A 2DEG layer 116 is formed at the interface between the nitride-based compound semiconductor layer 112 and the aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118. In the configuration example 3 illustrated in FIG. 12, the HEMT is illustrated.

(Structural example 4)
As shown in FIG. 13, the configuration example 4 of the FET cell of the semiconductor device 24 mounted on the millimeter-wave band thin package package according to the first to third embodiments includes a semi-insulating substrate 110 and a semi-insulating substrate. Nitride compound semiconductor layer 112 disposed on conductive substrate 110 and aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) disposed on nitride compound semiconductor layer 112 ) 118, a source finger electrode (S) 120 and a drain finger electrode (D) 122 disposed on an aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118, and aluminum And a gate finger electrode 124 disposed in a two-stage recess portion on a gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118. A 2DEG layer 116 is formed at the interface between the nitride-based compound semiconductor layer 112 and the aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 118. In the configuration example 4 illustrated in FIG. 13, the HEMT is illustrated.

  Moreover, in the above configuration examples 1 to 4, the nitride-based compound semiconductor layer 112 other than the active region is used as an electrically inactive element isolation region. Here, the active region refers to the 2DEG layer 116 immediately below the source finger electrode 120, the gate finger electrode 124, and the drain finger electrode 122, between the source finger electrode 120 and the gate finger electrode 124, and between the drain finger electrode 122 and the gate finger electrode 124. 2 DEG layer 116.

As another method for forming the element isolation region, the aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1) 18 and a part of the nitride-based compound semiconductor layer 112 in the depth direction are used. It can also be formed by ion implantation. As the ion species, for example, nitrogen (N), argon (Ar), or the like can be applied. The dose accompanying ion implantation is, for example, about 1 × 10 ¹⁴ (ions / cm ² ), and the acceleration energy is, for example, about 100 keV to 200 keV.

A passivation insulating layer (not shown) is formed on the element isolation region and the device surface. As this insulating layer, for example, a nitride film, an alumina (Al ₂ O ₃ ) film, an oxide film (SiO ₂ ), an oxynitride film (SiON) or the like deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) method is formed. be able to.

  The source finger electrode 120 and the drain finger electrode 122 are made of, for example, Ti / Al. The gate finger electrode 124 can be formed of, for example, Ni / Au.

  In the semiconductor device 24 mounted on the millimeter-wave band thin package package according to the first to third embodiments, the longitudinal pattern lengths of the gate finger electrode 124, the source finger electrode 120, and the drain finger electrode 122 are as follows. The shorter the operating frequency, the shorter is set. For example, in the millimeter wave band, the pattern length is about 25 μm to 50 μm.

  Further, the width of the source finger electrode 120 is, for example, about 40 μm, and the width of the source terminal electrodes S11, S12, S21, S22,..., S101, S102 is, for example, about 100 μm. Further, the formation width of the VIA holes SC11, SC12, SC21, SC22,..., SC101, SC102 is, for example, about 10 μm to 40 μm.

  According to the present embodiment, it is possible to provide a thin package for a millimeter wave band with reduced stress and good heat dissipation and a method for manufacturing the same.

[Other embodiments]
Although the millimeter-wave band thin package and the manufacturing method thereof according to the first to third embodiments have been described, this embodiment is presented as an example and is not intended to limit the scope of the invention. Absent. The novel embodiment can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. This embodiment and its modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  The semiconductor devices mounted on the millimeter-wave band thin package according to the first to third embodiments are not limited to FETs and HEMTs, but are also LDMOS (Laterally Diffused Metal-Oxide-Semiconductor Field Effect Transistors) and heterogeneous devices. Needless to say, an amplifying element such as a junction bipolar transistor (HBT) or a micro electro mechanical systems (MEMS) element can also be applied.

  As described above, various embodiments that are not described herein are included.

DESCRIPTION OF SYMBOLS 1 ... Thin package 10 for millimeter wave band ... Cap 19a ... Input terminal connection pattern 19b ... Output terminal connection pattern 20 ... Ceramic substrate 20a ... Back surface metal layer 20b ... Metal foil 21a ... RF input terminal electrode 21b ... RF output terminal electrode 21c ... Terminal surface 21g ... Gate terminal connection pattern 21d ... Drain terminal connection pattern 23G ... Gate terminal electrode 23D ... Drain terminal electrode 24 ... Semiconductor device 30 ... Opening 60 ... Wiring substrate 61a, 61b ... Wiring layer 70 ... Housing 70a ... Mounting surface 80 ... Recess 80a ... End face 110 ... Semi-insulating substrate 112 ... Nitride compound semiconductor layer (GaN epitaxial growth layer)
116: Two-dimensional electron gas (2DEG) layer 118: Aluminum gallium nitride layer (Al _x Ga _1-x N) (0.1 ≦ x ≦ 1)
DESCRIPTION OF SYMBOLS 120 ... Source finger electrode 122 ... Drain finger electrode 124 ... Gate finger electrode 126 ... Source region 128 ... Drain region 200, 200c ... Conductor base plate 200a, 200b, 200d ... Solder layer G, G1, G2, ..., G10 ... Gate terminal electrode S, S11, S12, ..., S101, S102 ... Source terminal electrodes D, D1, D2, ..., D10 ... Drain terminal electrodes SC11, SC12, ..., SC91, SC92, SC101, SC102 ... VIA holes

Claims (20)

A conductor base plate;
A ceramic substrate disposed on the conductor base plate, comprising a terminal connection pattern and a terminal electrode connected on the terminal connection pattern on a front surface, a back surface metal layer on the back surface, and an opening. A featured thin package for millimeter-wave bands. A housing having a recess;
A wiring board disposed on an end surface surrounding the recess of the housing;
The thin layer for millimeter wave band according to claim 1, further comprising: a wiring layer disposed on the wiring board, wherein the terminal electrode extends on the wiring board and is connected to the wiring layer. package.   The thin package for a millimeter wave band according to claim 2, wherein a height from the mounting surface to the surface of the wiring layer is equal to a height from the mounting surface to the surface of the terminal connection pattern.   The thin package for a millimeter wave band according to claim 1, wherein the terminal connection pattern and the back surface metal layer are vacuum deposited layers or plated layers. A conductor base plate;
A thin package for a millimeter-wave band, comprising: a ceramic substrate disposed on the conductor base plate, comprising a terminal electrode on the front surface, a metal foil on the back surface, and an opening.   The thin package for a millimeter wave band according to claim 1, further comprising a housing having a recess, wherein the conductor base plate is disposed on a mounting surface of the bottom surface of the recess. A ceramic substrate having a terminal electrode on the front surface, a metal foil on the back surface, and having an opening;
A thin package for millimeter wave band, comprising: a conductor base plate disposed on a metal foil in the opening of the ceramic substrate.   The thin package for a millimeter wave band according to claim 7, further comprising a housing having a recess, wherein the ceramic substrate is mounted on the mounting surface of the bottom surface of the recess via the metal foil. A housing having a recess;
A wiring board disposed on an end surface surrounding the recess of the housing;
The millimeter waveband according to claim 5 or 7, further comprising: a wiring layer disposed on the wiring board, wherein the terminal electrode extends on the wiring board and is connected to the wiring layer. Thin package for use.   10. The thin millimeter wave band according to claim 9, wherein a height from the mounting surface of the bottom surface of the recess to the surface of the wiring layer is equal to a height from the mounting surface of the bottom surface of the recess to the surface of the ceramic substrate. package.   The thin package for a millimeter wave band according to claim 5 or 7, wherein the terminal electrode and the metal foil are DBC metal layers. Said ceramic substrate is an aluminum oxide (Al ₂ O _3), millimeters of any one of claims 1 to 11, characterized in that either an aluminum nitride (AlN), or beryllium oxide (BeO) Thin package for wave bands. Forming a terminal connection pattern on the surface of the ceramic substrate having an opening;
Forming a terminal electrode on the terminal connection pattern;
Forming a back metal layer on the back surface of the ceramic substrate;
Forming a solder layer on the conductor base base plate;
Bonding the back metal layer to the solder layer and mounting the ceramic substrate on the conductor base plate;
And a step of mounting a semiconductor device on the conductor base plate through the solder layer in the opening. The method of manufacturing a thin package for a millimeter wave band according to claim 13, wherein the step of mounting the ceramic substrate on the conductor base plate and the step of mounting a semiconductor device on the conductor base plate are performed simultaneously. . Arranging a terminal electrode on the surface of the ceramic substrate having an opening, and arranging a metal foil on the back side of the ceramic substrate;
Forming the terminal electrode on the surface of the ceramic substrate and simultaneously forming the metal foil on the back surface of the ceramic substrate;
Forming a back metal layer on the metal foil from the back side of the ceramic substrate;
Forming a first solder layer on the conductor base plate;
Bonding the back metal layer to the first solder layer and mounting the ceramic substrate on the conductor base plate;
Forming a second solder layer on the metal foil in the opening of the ceramic substrate;
And a step of mounting a semiconductor device on the second solder layer in the opening of the ceramic substrate. Forming a recess in the housing;
The method for manufacturing a thin package for a millimeter wave band according to claim 13 or 15, further comprising: mounting the conductor base plate on a mounting surface of the bottom surface of the recess. Arranging a terminal electrode on the surface of the ceramic substrate having an opening, and arranging a metal foil on the back side of the ceramic substrate;
Forming the terminal electrode on the surface of the ceramic substrate and simultaneously forming the metal foil on the back surface of the ceramic substrate;
Forming a first solder layer on the metal foil in the opening of the ceramic substrate;
Forming a conductor base plate on the first solder layer in the opening of the ceramic substrate;
Forming a second solder layer on the conductor base plate in the opening of the ceramic substrate;
And a step of mounting a semiconductor device on the second solder layer in the opening of the ceramic substrate. Forming a recess in the housing;
The method of manufacturing a thin package for a millimeter wave band according to claim 17, further comprising: mounting the ceramic substrate on the mounting surface of the bottom surface of the recess via the metal foil. Forming a wiring board on an end surface of the casing surrounding the recess;
Forming a wiring layer on the wiring board;
The method of manufacturing a thin package for a millimeter wave band according to claim 16 or 18, further comprising a step of connecting the terminal electrode extending on the wiring board to the wiring layer.   The method of manufacturing a thin package for a millimeter wave band according to claim 15 or 17, wherein the terminal electrode and the metal foil are simultaneously formed by DBC processing.