JP2012204627A5 - - Google Patents
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- JP2012204627A5 JP2012204627A5 JP2011068118A JP2011068118A JP2012204627A5 JP 2012204627 A5 JP2012204627 A5 JP 2012204627A5 JP 2011068118 A JP2011068118 A JP 2011068118A JP 2011068118 A JP2011068118 A JP 2011068118A JP 2012204627 A5 JP2012204627 A5 JP 2012204627A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive pattern
- pattern portion
- hole
- alignment mark
- misalignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
比較例７
工程（ｂ′）において、アライメントマークとして用いた貫通孔Ａ上及びその周囲（貫通孔の外縁から３００μｍ範囲内）の光架橋性樹脂層も硬化させた後、工程（ｄ）において、貫通孔Ａをアライメントマークとした以外は、実施例５と同様にして導電パターンを作製した。工程（ｅ）で得られたエッチングレジスト層の直径５０μｍの円状パターン部Ｃ計４個について、第一導電パターン部と第二導電パターン部の中心間距離の平均は２０μｍであった。工程（ｆ）で得られた導電パターンには、第一導電パターン部と第二導電パターン部の位置ずれに由来するショート欠陥が多発していた。
Comparative Example 7
In the step (b ′), the photocrosslinkable resin layer on and around the through hole A used as the alignment mark (within 300 μm from the outer edge of the through hole) is also cured, and then in the step (d), the through hole A A conductive pattern was produced in the same manner as in Example 5 except that was used as an alignment mark. The average distance between the centers of the first conductive pattern portion and the second conductive pattern portion was 20 μm for a total of four circular pattern portions C having a diameter of 50 μm of the etching resist layer obtained in the step (e). In the conductive pattern obtained in the step (f), short-circuit defects derived from misalignment between the first conductive pattern portion and the second conductive pattern portion frequently occurred.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011068118A JP5537476B2 (en) | 2011-03-25 | 2011-03-25 | Method for producing conductive pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011068118A JP5537476B2 (en) | 2011-03-25 | 2011-03-25 | Method for producing conductive pattern |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012204627A JP2012204627A (en) | 2012-10-22 |
| JP2012204627A5 true JP2012204627A5 (en) | 2013-11-07 |
| JP5537476B2 JP5537476B2 (en) | 2014-07-02 |
Family
ID=47185265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011068118A Active JP5537476B2 (en) | 2011-03-25 | 2011-03-25 | Method for producing conductive pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5537476B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05273766A (en) * | 1992-03-26 | 1993-10-22 | Matsushita Electric Works Ltd | Circuit board |
| JPH0661616A (en) * | 1992-08-04 | 1994-03-04 | Fujitsu Ltd | Formation of photoresist film |
| JPH06202128A (en) * | 1992-12-28 | 1994-07-22 | Sharp Corp | Thin film working method |
| JP2007079315A (en) * | 2005-09-15 | 2007-03-29 | Fujifilm Corp | Pattern forming method |
| JP2009295677A (en) * | 2008-06-03 | 2009-12-17 | Mitsubishi Paper Mills Ltd | Method of producing metallic pattern |
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2011
- 2011-03-25 JP JP2011068118A patent/JP5537476B2/en active Active
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