JPH05273766A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JPH05273766A JPH05273766A JP4068404A JP6840492A JPH05273766A JP H05273766 A JPH05273766 A JP H05273766A JP 4068404 A JP4068404 A JP 4068404A JP 6840492 A JP6840492 A JP 6840492A JP H05273766 A JPH05273766 A JP H05273766A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- film
- exposure
- circuit
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、銅張り積層板、銅張
りフレキシブル基板、ＩＴＯガラス基板等の基板に対し
回路形成を行って回路板を得る回路板の製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board manufacturing method for obtaining a circuit board by forming a circuit on a substrate such as a copper-clad laminate, a copper-clad flexible substrate, or an ITO glass substrate.
【０００２】[0002]
【従来の技術】従来、たとえばスルーホール付き銅張り
積層板に回路形成を行うために、表面保護層となる剥離
紙にレジストを塗布したものを基板に熱圧着してレジス
ト層を形成するドライフィルム工法が用いられてきた。
しかし、近年の目ざましい電子産業の発達により、部品
の小型化、ＩＣ回路の集積の高度化のため、より微細な
回路形成が望まれており，ドライフィルム工法では、レ
ジスト層の厚み、カバーフィルムの影響による解像度の
低下が避けられず、１００μｍ以下の回路形成が工業的
に行いにくいことが指摘されるようになった。2. Description of the Related Art Conventionally, in order to form a circuit on, for example, a copper-clad laminate having through-holes, a release film, which serves as a surface protective layer, is coated with a resist, which is thermocompression-bonded to a substrate to form a resist film. Construction methods have been used.
However, due to the recent remarkable development of the electronic industry, finer circuit formation is desired due to the miniaturization of parts and the sophistication of IC circuit integration. In the dry film method, the thickness of the resist layer and the cover film are It has been pointed out that a reduction in resolution due to the influence is unavoidable and that it is difficult to industrially form a circuit of 100 μm or less.
【０００３】[0003]
【発明が解決しようとする課題】これに対し、液状レジ
ストを用いて回路形成する方法は、ドライフィルム工法
よりも微細な回路形成を行うことが原理的に可能であ
る。この液状レジストを用いる方法では、一般的に、ポ
ジ型のレジストを用いる。しかし、このポジ型のレジス
トによる場合、レジスト塗布後その表面にタック性が残
るなど、まだ問題が残っている。On the other hand, in the method of forming a circuit using a liquid resist, it is possible in principle to form a finer circuit than the dry film method. In the method using the liquid resist, a positive resist is generally used. However, in the case of using this positive type resist, there are still problems such as tackiness remaining on the surface after the resist is applied.
【０００４】よく知られているように、レジストによっ
て描かれる回路パターンの精度を上げるにはレジスト厚
みは薄い程よい。しかし、従来、この薄膜化は、つぎの
ような問題があって、実現困難であった。すなわち、例
えばレジスト厚みを薄くするためにディップ法で行う
と、例えばスルーホール付積層板のスルーホールエッジ
部が特に薄くなってしまい、エッチングの結果、導通不
良を起こす。また、電着法で行うと、レジスト皮膜を生
成する際に不可避的に発生する酸素ガスの影響でレジス
ト皮膜にボアが発生し，製品回路の導通不良を起こすな
どレジストの薄膜化に限界があった。As is well known, the thinner the resist thickness, the better the accuracy of the circuit pattern drawn by the resist. However, conventionally, this thinning has been difficult to realize due to the following problems. That is, for example, if the dipping method is used to reduce the resist thickness, for example, the through-hole edge portion of the laminated plate with through-holes becomes particularly thin, resulting in poor conduction as a result of etching. In addition, when the electrodeposition method is used, there is a limit in thinning the resist, such as the occurrence of a bore in the resist film due to the influence of oxygen gas that is unavoidably generated when the resist film is formed, causing defective conduction in the product circuit. It was
【０００５】この発明は、上記のような問題に鑑み、液
状レジストを用いる回路板の形成工程において、タック
性が残らず、薄膜化が可能な回路板の製造方法を提供す
ることを課題とする。In view of the above problems, it is an object of the present invention to provide a method of manufacturing a circuit board which does not have tackiness and can be thinned in the step of forming a circuit board using a liquid resist. ..
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するた
め、この発明にかかる回路板の製造方法は、フォトレジ
ストを用いて回路形成する工程を含む回路板の製造方法
において、レジストとしてポジ型レジストを用いて基板
にレジスト皮膜を形成した後、前記レジスト皮膜に対
し、適性露光量よりも少ない露光量で前露光処理を行
い、つぎに、この前露光レジスト皮膜の表面部に対し現
像剤による可溶化を行って薄膜化した後、回路形成する
ようにすることをを特徴とする。In order to solve the above problems, a method of manufacturing a circuit board according to the present invention is a positive type resist as a resist in a method of manufacturing a circuit board including a step of forming a circuit using a photoresist. After forming a resist film on the substrate by using, a pre-exposure treatment is performed on the resist film with an exposure amount smaller than an appropriate exposure amount, and then the surface portion of the pre-exposure resist film is treated with a developer. It is characterized in that a circuit is formed after solubilization to form a thin film.
【０００７】以下に、この発明について詳しく述べる。
使用可能なポジ型レジストについては、一切制限はな
い。例えば、アルカリ可溶性樹脂と、ナフトキノンジア
ジド等のアルカリ可溶型を可能とする感光剤との組合せ
からなる通常の液状レジスト組成物、カルボキシル基、
スルホニル基、ホスホニル基、アミノ基などの極性基を
有する樹脂とナフトキノンジアジド等の前記感光剤との
組合せからなる電着用レジスト組成物、アルカリ可溶性
樹脂と感光により酸を発生する感光剤と酸によりアルカ
リ可溶性になる物質の組み合せからなる、いわゆる化学
増幅型レジスト組成物等があげられるが、レジストとし
ての完成度が高いと言う点から、アルカリ可溶性樹脂と
感光剤との組合せからなる前記通常の液状レジスト組成
物が好ましい。The present invention will be described in detail below.
There are no restrictions on the positive resist that can be used. For example, an ordinary liquid resist composition comprising a combination of an alkali-soluble resin and a sensitizer capable of an alkali-soluble type such as naphthoquinonediazide, a carboxyl group,
An electrodeposition resist composition comprising a combination of a resin having a polar group such as a sulfonyl group, a phosphonyl group, an amino group and the above-mentioned photosensitizer such as naphthoquinonediazide, an alkali-soluble resin, a photosensitizer that generates an acid by exposure to light, and an alkali by an acid Examples include so-called chemically amplified resist compositions, which are composed of a combination of substances that become soluble, but the ordinary liquid resist comprising a combination of an alkali-soluble resin and a photosensitizer from the viewpoint of high completion as a resist. Compositions are preferred.
【０００８】このレジストを用いて基板に塗布を行う。
塗布の方法は、特に限定はないが、スピンナー法、ロー
ルコーター法、ディップ法、電着法、スクリーン印刷
法、バーコーター法、ドクターブレード法、静電塗装
法、スプレー法などがあげられる。スルーホール付の基
板に塗布を行うのであれば、ディップ法、電着法が好ま
しい。A substrate is coated with this resist.
The coating method is not particularly limited, and examples thereof include a spinner method, a roll coater method, a dip method, an electrodeposition method, a screen printing method, a bar coater method, a doctor blade method, an electrostatic coating method and a spray method. If coating is applied to a substrate with through holes, dipping or electrodeposition is preferable.
【０００９】これらの方法により基板に形成したレジス
ト皮膜に対し、つぎに、前露光を行う。前露光の方法
は、前露光処理後のレジスト皮膜を現像剤で可溶化する
際に、薄膜化されたレジスト皮膜に欠陥を生じない程度
であれば、露光器、露光量に関して制限はない。一例を
あげるとすると、その露光量については、レジスト皮膜
全部を現像剤で可溶化するに充分な露光量すなわち適正
露光量の２０％〜８０％程度の露光を行うことが好まし
く、３０％〜６０％の範囲の露光を行うことが特に望ま
しい。この前露光量が適正露光量の２０％未満である
と、前露光処理の効果がほとんど得られない。また、８
０％を越えると、現像剤によるレジスト皮膜の薄膜化が
著しくなり、エッチングの際に回路に欠陥を生じる恐れ
がある。Next, pre-exposure is performed on the resist film formed on the substrate by these methods. The pre-exposure method is not limited with respect to the exposure device and the exposure amount as long as the resist film after pre-exposure treatment is solubilized with a developer as long as it does not cause defects in the thinned resist film. As an example, the exposure dose is preferably 20% to 80% of the exposure dose sufficient to solubilize the entire resist film with the developer, that is, 30% to 60%. It is particularly desirable to perform exposure in the range of%. If this pre-exposure amount is less than 20% of the proper exposure amount, the effect of the pre-exposure treatment can hardly be obtained. Also, 8
If it exceeds 0%, the resist film is remarkably thinned by the developer, which may cause defects in the circuit during etching.
【００１０】前露光に用いる露光器については、平行光
を照射する露光器を用いる必要は特になく、通常の露光
器を使用することができる。レジストや現像液の種類、
各処理の温度等により、レジスト皮膜の薄膜化処理の際
にレジスト皮膜表面が荒れることがあるが、その際に
は、乾燥器等を用いた加熱によって表面をレベリングす
ることで、この表面荒れを解消することができる。Regarding the exposure device used for the pre-exposure, it is not particularly necessary to use an exposure device for irradiating parallel light, and an ordinary exposure device can be used. Type of resist or developer,
Depending on the temperature of each treatment, the surface of the resist coating may become rough during the thinning treatment of the resist coating.In such a case, leveling the surface by heating with a drier etc. It can be resolved.
【００１１】このような前露光処理を行った基板に対
し、そのレジスト皮膜に適合する現像剤を用いて、レジ
スト皮膜の表面部の溶解除去を行い、所望の厚みに薄膜
化されたレジスト皮膜を得る。その後は、通常の方法で
回路形成することにより、基板の上に所望の回路を得る
ようにする。The surface of the resist film is dissolved and removed from the substrate subjected to such pre-exposure treatment by using a developer suitable for the resist film to form a resist film thinned to a desired thickness. obtain. After that, a circuit is formed by a usual method to obtain a desired circuit on the substrate.
【００１２】[0012]
【作用】レジスト皮膜が形成された基板に対し前露光処
理を施した後、前露光処理後のレジスト皮膜の表面部を
現像剤で可溶化して薄膜化するようにすると、微細な回
路形成を可能とするレジストパターンを描くのに適した
レジスト薄膜を容易に形成することができる。前露光に
よって、レジスト皮膜にタック性が残らないようにな
る。[Function] After the substrate on which the resist film is formed is subjected to the pre-exposure treatment, the surface portion of the resist film after the pre-exposure treatment is solubilized with a developer to form a thin film, thereby forming a fine circuit. A resist thin film suitable for drawing a possible resist pattern can be easily formed. Pre-exposure prevents the resist film from remaining tacky.
【００１３】また、ポジ型レジストを用いることによ
り、スルーホールつき配線板においてもスルーホール部
のレジスト薄膜を減少させることなく、表面部のレジス
ト皮膜を薄膜化することができる。Further, by using the positive type resist, even in the wiring board with through holes, the resist film on the surface portion can be thinned without reducing the resist thin film on the through hole portion.
【００１４】[0014]
【実施例】以下に、この発明をさらに詳しく説明するた
め、その実施例を挙げるが、この発明は、以下の実施例
により何等制約を受けるものでない。以下において
「部」は「重量部」を表す。 −実施例１− ノボラック樹脂（ＰＲ−５１７６７・住友ベークライト
社製）１００部、１，２−ナフトキノンジアジド系感光
剤（ＮＴ−１５４・東洋合成化学工業社製）３０部をエ
チルセロソルブアセテート３００部に混合溶解し、ポジ
型液状フォトレジスト（１）を調製した。そのレジスト
液の適正露光量を調べたところ３００ｍj ／ｃｍ2 であ
った。この液状レジストをディップ法を用いて銅張り積
層板に塗布、乾燥を行ったところ、約１０μｍのフォト
レジスト皮膜を得ることができた。EXAMPLES The present invention will now be described in more detail with reference to the following examples, which should not be construed as limiting the invention. In the following, "part" means "part by weight". -Example 1- 100 parts of novolak resin (PR-51767, manufactured by Sumitomo Bakelite Co., Ltd.), 30 parts of 1,2-naphthoquinonediazide type photosensitizer (NT-154, manufactured by Toyo Gosei Chemical Co., Ltd.) in 300 parts of ethyl cellosolve acetate. The mixture was dissolved to prepare a positive liquid photoresist (1). When the proper exposure amount of the resist solution was examined, it was 300 mj / cm 2 . When this liquid resist was applied to a copper-clad laminate using the dipping method and dried, a photoresist film of about 10 μm could be obtained.
【００１５】このフォトレジスト皮膜に１５０ｍj ／ｃ
ｍ2 （適正露光量の５０％）の前露光処理を行った後、
現像液であるメタケイ酸ソーダ（２．０重量％）水溶液
を用いて前露光処理レジスト膜表面部の可溶化処理を行
い、薄膜化したレジスト皮膜を得た。表面粗さ計を用い
て測定した膜厚は、約５μｍであった。次に、回路を模
したテストパターンを１７０ｍj ／ｃｍ2 の露光量で焼
き付け、現像処理したところ、７μｍのパターンまで完
全にパターニングすることができた。また、エッチング
後のスルーホール部での断線による導通不良は見られな
かった。150 mj / c of this photoresist film
After performing pre-exposure treatment of m 2 (50% of proper exposure amount),
Solubilization of the surface portion of the pre-exposure treated resist film was performed using an aqueous solution of sodium metasilicate (2.0 wt%) as a developing solution to obtain a thin resist film. The film thickness measured using a surface roughness meter was about 5 μm. Next, when a test pattern imitating a circuit was printed with an exposure amount of 170 mj / cm 2 and developed, it was possible to completely pattern up to a pattern of 7 μm. Further, no conduction failure due to disconnection in the through hole portion after etching was observed.
【００１６】−実施例２− 実施例１と同様のポジ型液状フォトレジスト（１）を、
ディップ法を用いて銅張り積層板に塗布、乾燥を行った
ところ、約１０μｍのフォトレジスト皮膜を得ることが
できた。このフォトレジスト皮膜に２００ｍj ／ｃｍ2
（適正露光量の６７％）の前露光処理を行い、実施例１
と同じ現像液を用いて前露光処理レジスト膜表面部の可
溶化処理を行い、薄膜化したレジスト皮膜を得た。表面
粗さ計を用いて測定した膜厚は、約３μｍであった。-Example 2- A positive type liquid photoresist (1) similar to that of Example 1 was used.
When the copper-clad laminate was coated and dried using the dip method, a photoresist film of about 10 μm could be obtained. 200 mj / cm 2 on this photoresist film
A pre-exposure treatment (67% of the proper exposure amount) is performed, and the first embodiment is performed.
Pre-exposure treatment The surface portion of the resist film was solubilized using the same developer as above to obtain a thin resist film. The film thickness measured using a surface roughness meter was about 3 μm.
【００１７】次に、回路を模したテストパターンを１０
０ｍj ／ｃｍ2 の露光量で焼き付け、現像処理したとこ
ろ、５μｍのパターンまで完全にパターニングすること
ができた。また、エッチング後のスルーホール部での断
線による導通不良は見られなかった。さらに、エッチン
グ処理時の回路のかけは生じず、充分なエッチング液耐
性を有していた。Next, a test pattern imitating a circuit is set to 10
When baking was performed with an exposure dose of 0 mj / cm 2 and development processing was performed, patterning up to a pattern of 5 μm could be completed. Further, no conduction failure due to disconnection in the through hole portion after etching was observed. Further, the circuit was not broken during the etching treatment, and had sufficient resistance to the etching solution.
【００１８】−実施例３− 実施例１と同様のポジ型液状フォトレジスト（１）を、
デイップ法を用いて銅張り積層板に塗布、乾燥を行った
ところ、約１０μｍのフォトレジスト皮膜を得ることが
できた。このフォトレジスト皮膜に８０ｍj ／ｃｍ
2 （適正露光量の２７％）の前露光処理を行い、実施例
１と同じ現像液を用いて前露光処理レジスト膜表面部の
可溶化処理を行い、薄膜化したレジスト皮膜を得た。表
面粗さ計を用いて測定した膜厚は、約７μｍであった。-Example 3-A positive liquid photoresist (1) similar to that of Example 1 was used.
When the copper-clad laminate was coated and dried using the dip method, a photoresist film of about 10 μm could be obtained. 80mj / cm on this photoresist film
2 (27% of the proper exposure amount) was pre-exposed, and the same developer as in Example 1 was used to solubilize the surface portion of the pre-exposed resist film to obtain a thin resist film. The film thickness measured using a surface roughness meter was about 7 μm.
【００１９】次に、回路を模したテストパターンを２４
０ｍj ／ｃｍ2 の露光量で焼き付け、現像処理したとこ
ろ、１０μｍのパターンまで完全にパターニングするこ
とができた。また、エッチング後のスルーホール部での
断線による導通不良は見られなかった。 −実施例４− 市販レジストであるポジ型液状フォトレジストＰＭＥＲ
−Ｐ４１００（東京応化社製）の適正露光量を調べたと
ころ４００ｍj ／ｃｍ2 であった。この液状レジストを
ディップ法を用いて銅張り積層板に塗布、乾燥を行った
ところ、約１０μｍのフォトレジスト皮膜を得ることが
できた。Next, 24 test patterns simulating the circuit
When baked and developed at an exposure amount of 0 mj / cm 2 , patterning of up to 10 μm could be completed. Further, no conduction failure due to disconnection in the through hole portion after etching was observed. -Example 4-Positive liquid photoresist PMER which is a commercially available resist
When the proper exposure amount of -P4100 (manufactured by Tokyo Ohka Co., Ltd.) was examined, it was 400 mj / cm 2 . When this liquid resist was applied to a copper-clad laminate using the dipping method and dried, a photoresist film of about 10 μm could be obtained.
【００２０】このフォトレジスト皮膜に２００ｍj ／ｃ
ｍ2 （適正露光量の５０％）の前露光処理を行い、実施
例１と同じ現像液を用いて前露光処理レジスト膜表面部
の可溶化処理を行い、薄膜化したレジスト皮膜を得た。
表面粗さ計を用いて測定した膜厚は、約５μｍであっ
た。次に、回路を模したテストパターンを２２０ｍj ／
ｃｍ2 の露光量で焼き付け、現像処理したところ、７μ
ｍのパターンまで完全にパターニングすることができ
た。また、エッチング後のスルーホール部での断線によ
る導通不良は見られなかった。200 mj / c of this photoresist film
A pre-exposure treatment of m 2 (50% of the proper exposure amount) was performed, and the pre-exposure treatment resist film surface portion was solubilized using the same developer as in Example 1 to obtain a thin resist film.
The film thickness measured using a surface roughness meter was about 5 μm. Next, a test pattern imitating a circuit is 220 mj /
When baked and developed with an exposure dose of cm 2 , it was 7μ.
The pattern of m could be completely patterned. Further, no conduction failure due to disconnection in the through hole portion after etching was observed.
【００２１】−実施例５− ノボラック樹脂（ＰＲ−５１７６７・住友ベークライト
社製）１００部、１，２─ナフトキノンジアジド系感光
剤（ＮＴ−３００・東洋合成化学工業社製）２０部をエ
チルセロソルブアセテート３００部に混合溶解し、ポジ
型液状フォトレジスト（２）を調製した。Example 5-100 parts of novolak resin (PR-51767, manufactured by Sumitomo Bakelite Co., Ltd.), 20 parts of 1,2-naphthoquinonediazide type photosensitizer (NT-300, manufactured by Toyo Gosei Chemical Industry Co., Ltd.) and ethyl cellosolve acetate. The mixture was dissolved in 300 parts to prepare a positive liquid photoresist (2).
【００２２】このレジスト液の適正露光量を調べたとこ
ろ２８０ｍj ／ｃｍ2 であった。この液状レジストをデ
ィッピングによりスルーホール付き銅張り積層板に塗
布、乾燥を行ったところ、約１０μｍのフォトレジスト
皮膜を得ることができた。このフォトレジスト皮膜に１
５０ｍj ／ｃｍ2 （適正露光量の５３％）の前露光処理
を行い、実施例１と同じ現像液を用いて前露光処理レジ
スト膜表面部の可溶化処理を行い、薄膜化したレジスト
皮膜を得た。 表面粗さ計を用いて測定した膜厚は、約
５μｍであった。When the proper exposure amount of this resist solution was examined, it was 280 mj / cm 2 . When this liquid resist was applied to a copper clad laminate with through holes by dipping and dried, a photoresist film of about 10 μm could be obtained. 1 for this photoresist film
A pre-exposure treatment of 50 mj / cm 2 (53% of the proper exposure amount) was performed, and the pre-exposure resist film surface portion was solubilized using the same developer as in Example 1 to obtain a thin resist film. It was The film thickness measured using a surface roughness meter was about 5 μm.
【００２３】次に、回路を模したテストパターンを１７
０ｍj ／ｃｍ2 の露光量で焼き付け、現像処理したとこ
ろ、７μｍのパターンまで完全にパターニングすること
ができた。また、エッチング後のスルーホール部での断
線による導通不良は見られなかった。 −比較例１− 実施例１と同様のポジ型液状フォトレジスト（１）を、
ディップ法を用いて銅張り積層板に塗布、乾燥を行った
ところ、約１０μｍのフォトレジスト皮膜を得ることが
できた。Next, a test pattern imitating a circuit is used.
When baking was performed with an exposure dose of 0 mj / cm 2 and development processing was performed, patterning up to a pattern of 7 μm could be completed. Further, no conduction failure due to disconnection in the through hole portion after etching was observed. -Comparative Example 1-A positive liquid photoresist (1) similar to that of Example 1 was used.
When the copper-clad laminate was coated and dried using the dip method, a photoresist film of about 10 μm could be obtained.
【００２４】このフォトレジスト皮膜に、前露光処理・
薄膜化を行なわずに、回路を模したテストパターンを３
００ｍj ／ｃｍ2 の露光量で焼き付け、現像処理したと
ころ１５μｍのパターンまでしか完全にパターニングす
ることができなかった。 −比較例２− 実施例１と同様のポジ型液状フォトレジスト（１）を、
ディップ法を用いて銅張り積層板に塗布、乾燥を行った
ところ、約１０μｍのフォトレジスト皮膜を得ることが
できた。Pre-exposure treatment /
Test pattern imitating a circuit without thinning 3
When baking was performed with an exposure dose of 00 mj / cm 2 and development processing was performed, patterning could only be completed up to a pattern of 15 μm. -Comparative Example 2-A positive liquid photoresist (1) similar to that of Example 1 was used,
When the copper-clad laminate was coated and dried using the dip method, a photoresist film of about 10 μm could be obtained.
【００２５】このフォトレジスト皮膜に、前露光処理を
行なわずに、実施例１と同様の現像液を用いて薄膜化処
理を行った。表面粗さ計を用いて測定した膜厚は、約１
０μｍと変化がなかった。次に、回路を模したテストパ
ターンを３００ｍj ／ｃｍ2 の露光量で焼き付け、現像
処理したところ、１５μｍのパターンまでし完全にパタ
ーニングすることができなかった。This photoresist film was subjected to a thinning treatment using the same developing solution as in Example 1 without performing the pre-exposure treatment. The film thickness measured with a surface roughness meter is about 1
There was no change of 0 μm. Next, a test pattern imitating a circuit was printed with an exposure amount of 300 mj / cm 2 and developed. As a result, a pattern of 15 μm was formed and complete patterning was not possible.
【００２６】−比較例３− 実施例１と同様のポジ型液状フォトレジスト（１）を、
この液状レジストをディップ法を用いて銅張り積層板に
塗布、乾燥を行ったところ約１０μｍのフォトレジスト
皮膜を得ることができた。このフォトレジスト皮膜にほ
ぼ適正露光量の前露光処理を行い、実施例１と同様の現
像液を用いて薄膜化処理を行った。表面粗さ計を用いて
測定した膜厚は、約１〜２μｍとほとんど膜が残ってお
らず、さらに膜厚ばらつきも大きくなっていた。Comparative Example 3 A positive type liquid photoresist (1) similar to that of Example 1 was used.
When this liquid resist was applied to a copper-clad laminate using the dipping method and dried, a photoresist film of about 10 μm could be obtained. This photoresist film was subjected to a pre-exposure treatment with an approximately proper exposure amount, and a thinning treatment was performed using the same developing solution as in Example 1. The film thickness measured using a surface roughness meter was about 1 to 2 μm, and almost no film remained, and the film thickness variation was large.
【００２７】次に、回路を模したテストパターンを３０
０ｍj ／ｃｍ2 の露光量で焼き付け、現像処理したとこ
ろ５μｍのパターンまで完全にパターニングすることが
できたが、エッチング処理時に回路のかけを生じ、充分
なエッチング液耐性を有していなかった。 −比較例４− 実施例１と同様のポジ型液状フォトレジスト（１）を、
ディップ法を用いて引き上げ速度を調整しつつ、銅張り
積層板に約４μｍのフォトレジスト皮膜が得られるよう
に塗布、乾燥を行った。Next, a test pattern imitating a circuit is set to 30.
When it was baked at an exposure dose of 0 mj / cm 2 and developed, it was possible to completely pattern up to a pattern of 5 μm, but a circuit was formed during the etching treatment and it did not have sufficient etching solution resistance. -Comparative Example 4-A positive liquid photoresist (1) similar to that of Example 1 was used.
The copper-clad laminate was coated and dried so as to obtain a photoresist film of about 4 μm while adjusting the pulling rate using a dipping method.
【００２８】このフォトレジスト皮膜に、前露光処理を
行なわずに、回路を模したテストパターンを３００ｍj
／ｃｍ2 の露光量で焼き付け、現像処理したところ、７
μｍのパターンまで完全にパターニングすることができ
たが、エッチング処理時にスルーホール部での断線が生
じ、充分なエッチング液耐性を有していなかった。A test pattern imitating a circuit was formed on this photoresist film at 300 mj without pre-exposure treatment.
After baking and developing with an exposure amount of / cm 2 ,
Although it was possible to completely pattern up to a pattern of μm, disconnection occurred in the through hole portion during the etching process, and sufficient resistance to the etching solution was not obtained.
【００２９】[0029]
【発明の効果】この発明にかかる回路板の製造方法によ
れば、エッチングレジスト皮膜を、皮膜に欠陥を与える
ことなく薄膜化することが可能になる。皮膜にタック性
も残らない。その結果、平行光を露光するような特別な
露光器を必要とせず、より微細、高精度のレジスト像を
得ることができ、高精度微細回路形成に有用である。According to the method of manufacturing a circuit board according to the present invention, the etching resist film can be thinned without causing defects in the film. No tackiness remains on the film. As a result, it is possible to obtain a finer and higher-precision resist image without the need for a special exposure device for exposing parallel light, which is useful for forming a high-precision fine circuit.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年６月２５日[Submission date] June 25, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００３[Name of item to be corrected] 0003
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００３】[0003]
【発明が解決しようとする課題】これに対し、液状レジ
ストを用いて回路形成する方法は、ドライフィルム工法
よりも微細な回路形成を行うことが原理的に可能であ
る。この液状レジストを用いる方法では、一般的に、ネ
ガ型のレジストを用いる。しかし、このネガ型のレジス
トによる場合、レジスト塗布後その表面にタック性が残
るなど、まだ問題が残っている。On the other hand, in the method of forming a circuit using a liquid resist, it is possible in principle to form a finer circuit than the dry film method. In the method using the liquid resist, in general, Ne
A moth- type resist is used. However, in the case of using this negative type resist, there are still problems such as tackiness remaining on the surface after the resist is applied.
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１２[Correction target item name] 0012
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１２】[0012]
【作用】レジスト皮膜が形成された基板に対し前露光処
理を施した後、前露光処理後のレジスト皮膜の表面部を
現像剤で可溶化して薄膜化するようにすると、微細な回
路形成を可能とするレジストパターンを描くのに適した
レジスト薄膜を容易に形成することができる。 [Function] After the substrate on which the resist film is formed is subjected to the pre-exposure treatment, the surface portion of the resist film after the pre-exposure treatment is solubilized with a developer to form a thin film, thereby forming a fine circuit. A resist thin film suitable for drawing a possible resist pattern can be easily formed .
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 3/06 Ｅ 6921−4Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H05K 3/06 E 6921-4E
Claims (2)
程を含む回路板の製造方法において、レジストとしてポ
ジ型レジストを用いて基板にレジスト皮膜を形成した
後、前記レジスト皮膜に対し、適性露光量よりも少ない
露光量で前露光処理を行い、つぎに、この前露光レジス
ト皮膜の表面部に対し現像剤による可溶化を行って薄膜
化した後、回路形成するようにすることを特徴とする回
路板の製造方法。1. A method of manufacturing a circuit board including a step of forming a circuit using a photoresist, wherein a positive resist is used as a resist to form a resist film on a substrate, and then a proper exposure amount is applied to the resist film. A circuit board characterized by performing a pre-exposure treatment with a small exposure amount, and then solubilizing the surface portion of this pre-exposure resist film with a developer to reduce the film thickness and then forming a circuit. Manufacturing method.
露光量の２０〜８０％である請求項１記載の回路板の製
造方法。2. The method of manufacturing a circuit board according to claim 1, wherein the exposure amount when performing the pre-exposure treatment is 20 to 80% of the proper exposure amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4068404A JPH05273766A (en) | 1992-03-26 | 1992-03-26 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4068404A JPH05273766A (en) | 1992-03-26 | 1992-03-26 | Circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05273766A true JPH05273766A (en) | 1993-10-22 |
Family
ID=13372719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4068404A Pending JPH05273766A (en) | 1992-03-26 | 1992-03-26 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05273766A (en) |
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-
1992
- 1992-03-26 JP JP4068404A patent/JPH05273766A/en active Pending
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|---|---|---|---|---|
| EP2247170A4 (en) * | 2008-01-30 | 2012-12-26 | Mitsubishi Paper Mills Ltd | Method for electroconductive pattern formation |
| EP2247170A1 (en) * | 2008-01-30 | 2010-11-03 | Mitsubishi Paper Mills Limited | Method for electroconductive pattern formation |
| US20100330504A1 (en) * | 2008-01-30 | 2010-12-30 | Munetoshi Irisawa | Method for electroconductive pattern formation |
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| KR101333974B1 (en) * | 2008-01-30 | 2013-11-27 | 미쓰비시 세이시 가부시키가이샤 | Method for electroconductive pattern formation |
| JP5339626B2 (en) * | 2008-01-30 | 2013-11-13 | 三菱製紙株式会社 | Method for producing conductive pattern |
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| JP2011069938A (en) * | 2009-09-25 | 2011-04-07 | Mitsubishi Paper Mills Ltd | Method of forming solder resist |
| JP2011077191A (en) * | 2009-09-29 | 2011-04-14 | Mitsubishi Paper Mills Ltd | Method of forming solder resist |
| JP2011142148A (en) * | 2010-01-06 | 2011-07-21 | Mitsubishi Paper Mills Ltd | Method of forming level-difference resist resin layer |
| JP2011141451A (en) * | 2010-01-07 | 2011-07-21 | Mitsubishi Paper Mills Ltd | Photocrosslinkable resin composition |
| JP2012008194A (en) * | 2010-06-22 | 2012-01-12 | Mitsubishi Paper Mills Ltd | Film-thinning processing method of photo-crosslinkable resin layer |
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| JP2012204627A (en) * | 2011-03-25 | 2012-10-22 | Mitsubishi Paper Mills Ltd | Manufacturing method of conductive pattern |
| JP2013109038A (en) * | 2011-11-17 | 2013-06-06 | Mitsubishi Paper Mills Ltd | Dry film resist thinning processing method |
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