JP2012198099A - Inertial sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inertial sensor that can properly evaluate a symmetric circuit and is easily miniaturized.SOLUTION: A gyro sensor 1 (an example of an inertial sensor) includes a signal processing IC 10 and a sensor element 20. At least one of a plurality of rearrangement wirings 30 provided facing a first surface 11A of a semiconductor substrate 11 of the signal processing IC electrically connects electrodes formed on the semiconductor substrate and electrodes formed on the sensor element. There are further formed QV amplifiers 110, 120 (examples of a first and a second circuits) respectively generating a first and a second signal having a symmetric property, wirings 112, 122 (examples of a first and a second wirings), and a pad 70-1 (an example of a first electrode), 70-n (an example of a second electrode) to which the first and second signal are supplied via the wirings 112, 122, on the first surface of the semiconductor substrate. A form of the wiring 112 and a form of the wiring 122 have a symmetric property, in a planar view viewed from a direction orthogonal to the first surface of the semiconductor substrate.

Description

  The present invention relates to an inertial sensor.

  Inertial sensors that detect physical quantities such as angular velocity and acceleration are known. In recent years, not only high precision but also miniaturization of an inertial sensor has been demanded. One solution is to drive the sensor element and the desired physical quantity based on the output signal while driving the sensor element. An integrated circuit (IC) that generates a detection signal corresponding to the above has been developed.

  For example, in Patent Document 1, a gyro vibrating piece that functions as a sensor element and an IC are housed in one package, and a first detection terminal of the vibrating piece and a first amplifier connected to a charge amplifier (QV amplifier) of the IC are used. The detection signal input pad is connected via an IC connection terminal provided on the second layer substrate, and the second detection terminal of the resonator element and a second amplifier connected to the charge amplifier (QV amplifier) of the IC. A vibration gyro sensor having a structure in which the detection signal input pad is connected via an IC connection terminal provided on a second layer substrate is disclosed. In this vibration gyro sensor, the detection arm deforms and vibrates based on the Coriolis force acting on the drive arm of the vibration piece when the angular velocity is generated, and the IC is caused to vibrate with the first detection terminal of the vibration piece and the second The charge detection type sensor generates a detection signal corresponding to the magnitude of the angular velocity by detecting and processing the charge generated at the detection terminal by two charge amplifiers (QV amplifiers).

  Generally, a charge detection type sensor is easily affected by a disturbance because a small amount of charge is generated in a vibrating piece. On the other hand, according to the vibration gyro sensor of Patent Document 1, the first detection terminal and the second detection terminal are connected to the first detection signal input pad and the second detection signal input pad, respectively. Since the wiring path of the connection terminal is not exposed to the outer periphery of the package container, the impedance of the IC connection terminal changes due to moisture or salt adhering to the outside of the vibration gyro sensor, which adversely affects the detection signal characteristics. It has the effect that nothing is lost.

JP 2008-197033 A

  By the way, the two charge amplifiers (QV amplifiers) are designed as symmetrical circuits (symmetric circuits) using the same circuit and the same layout. The evaluation of the characteristics of the symmetric circuit is performed by the two output from the symmetric circuit. This is done by monitoring the signal from an external terminal. However, conventionally, there is a case where a characteristic that maintains symmetry is not seen in the evaluation of the symmetric circuit, and there is a problem that it is difficult to determine whether the cause is caused by the IC or the measurement.

  The present invention has been made in view of the above problems, and according to some aspects of the present invention, an inertial sensor that can appropriately evaluate a symmetric circuit and can be easily downsized is provided. Can be provided.

  (1) The present invention provides a semiconductor substrate having an electrode formed on a first surface, a sensor element having a vibrating portion and having an electrode formed on a surface facing the first surface of the semiconductor substrate, One or a plurality of rearrangement wirings provided opposite to the first surface of the semiconductor substrate, and at least one of the rearrangement wirings includes the electrode formed on the semiconductor substrate and the sensor The electrodes formed on the element are electrically connected, and the semiconductor substrate generates a first signal and a second signal having symmetry on the first surface and a second signal, respectively. Circuit, a first wiring, a second wiring, a first electrode to which the first signal is supplied through the first wiring, and the second wiring through the second wiring. And a second electrode to which the signal is supplied is formed on the first surface of the semiconductor substrate. In a plan view seen from the direction orthogonal shape of the first wiring shape and the second wiring has a symmetry, is an inertial sensor.

  According to the present invention, since the sensor element is mounted on the semiconductor substrate on which the integrated circuit is formed using the rearrangement wiring, the inertial sensor can be easily downsized. Further, the first wiring and the second wiring have a symmetry in a plan view viewed from a direction orthogonal to the first surface of the semiconductor substrate, so that the first wiring Since the difference between the parasitic resistance and the parasitic capacitance of the second wiring can be reduced, the first signal supplied to the first electrode and the second signal supplied to the second electrode are It is possible to appropriately evaluate the first circuit and the second circuit (symmetric circuit).

  (2) In this inertial sensor, the first wiring and the second wiring overlap with the vibration part of the sensor element in a plan view as viewed from a direction orthogonal to the first surface of the semiconductor substrate. You may make it arrange | position so that it may not become.

  In this way, the first wiring and the second wiring (symmetrical wiring) are less affected by the vibration part of the sensor element, so that the reliability of the evaluation of the first circuit and the second circuit (symmetrical circuit) is improved. Sex can be secured.

  (3) In this inertial sensor, the first wiring and the second wiring are the rearrangement wiring whose potential changes in a plan view viewed from a direction perpendicular to the first surface of the semiconductor substrate. You may make it arrange | position so that it may not overlap.

  In this way, the first wiring and the second wiring (symmetrical wiring) are not easily affected by the rearrangement wiring whose potential changes, so that the first circuit and the second circuit (symmetrical circuit) Reliability of evaluation can be ensured.

  (4) In this inertial sensor, the semiconductor substrate is rectangular in a plan view as viewed from a direction orthogonal to the first surface, and a plurality of external electrodes for inputting or outputting an external signal has a first side. And the two external electrodes may be the first electrode and the second electrode.

  In this way, since the first side of the semiconductor substrate is brought close to the substrate, it becomes easy to connect the external electrode of the semiconductor substrate and the substrate, so that a small multi-axis inertial sensor module can be created.

  (5) In this inertial sensor, the first electrode and the second electrode may be the two external electrodes at both ends of the plurality of external electrodes formed in the row. .

  In this case, the first circuit and the first wiring are formed in the peripheral portion along the second side orthogonal to the first side of the semiconductor substrate so as not to overlap the sensor element, and the second circuit When the circuit and the second wiring are formed in the peripheral portion along the third side parallel to the second side of the semiconductor substrate, the first wiring and the second wiring can be made shorter, so that the parasitic resistance And parasitic capacitance can be further reduced.

  (6) In this inertial sensor, the first circuit is formed in a peripheral portion along a second side orthogonal to the first side, and the second circuit is parallel to the second side. You may make it form in the peripheral part along a 3rd edge | side.

  In this way, the first circuit and the second circuit (symmetric circuit) can be moved away from the external electrode. Therefore, the influence of the external signal is reduced, and the first circuit and the second circuit (symmetric circuit) are reduced. ) Reliability of evaluation can be ensured.

  (7) In this inertial sensor, the first wiring is formed in a peripheral portion along the second side, and the second wiring is formed in a peripheral portion along the third side. It may be.

  In this way, the first wiring and the second wiring (symmetric wiring) can be moved away from the external electrode, so that the influence of the external signal is reduced and the first circuit and the second circuit (symmetric circuit) are reduced. ) Reliability of evaluation can be ensured.

  (8) In this inertial sensor, at least one of the relocation wirings is supplied with a fixed potential, and the first wiring and the second wiring are orthogonal to the first surface of the semiconductor substrate. In plan view as viewed from above, the wiring may be arranged so as to overlap the rearrangement wiring to which the fixed potential is supplied.

  In this way, the reliability of the evaluation of the first circuit and the second circuit (symmetric circuit) can be obtained by actively using the rearrangement wiring of the fixed potential as the shield wiring of the first wiring and the second wiring. Can be increased.

  (9) In this inertial sensor, the semiconductor substrate has the first shield wiring to which the fixed potential is supplied to the first surface in a plan view as viewed from a direction orthogonal to the first surface. The second shield wiring that is formed so as to overlap the first wiring or sandwich the first wiring and to which a fixed potential is supplied is seen in a plan view as viewed from a direction orthogonal to the first surface. It may be formed so as to overlap with the second wiring or sandwich the second wiring.

  In this way, since the first wiring and the second wiring can be shielded, the reliability of the evaluation of the first circuit and the second circuit (symmetric circuit) can be improved.

  (10) In this inertial sensor, the sensor element is formed with a mass adjusting unit capable of adjusting a mass in the vibrating unit, and at least one of the relocation wirings is the first surface of the semiconductor substrate. It may be arranged so as to overlap all of the mass adjusting portions of the sensor element in a plan view as viewed from a direction orthogonal to the sensor element.

  In this way, when the mass adjustment unit is irradiated with laser to finely adjust the mass, the laser that has passed through the mass adjustment unit can be absorbed by the rearrangement wiring, so that the laser reaches the semiconductor substrate. It is possible to prevent the circuit from being destroyed.

  (11) The inertial sensor further includes an insulating layer that is provided between the semiconductor substrate and the sensor element and absorbs a stress difference caused by a difference in temperature coefficient between the semiconductor substrate and the sensor element. You may make it.

  In this way, deformation of the sensor element due to stress can be mitigated, and stable oscillation of the sensor element can be maintained. Further, in order to relieve the stress applied to the sensor element, the insulating layer needs to have a certain thickness, so that a certain distance is secured between the QV amplifier and the sensor element and the rearrangement wiring, thereby reducing the coupling capacitance. be able to.

  (12) In this inertial sensor, the first circuit is a QV amplifier to which the first detection signal of the sensor element is input, and the second circuit is input to the second detection signal of the sensor element. A QV amplifier may be used.

  Since a QV amplifier that amplifies a minute signal has a higher gain than other circuits, the characteristics fluctuate greatly due to the difference in parasitic capacitance between the first wiring and the second wiring. Since the difference in parasitic capacitance between the first wiring and the second wiring can be reduced, the symmetry of the two QV amplifiers can be properly evaluated.

The functional block diagram of the gyro sensor of 1st-3rd embodiment. The layout diagram of the signal processing IC in 1st, 2nd embodiment. The top view which shows an example of the pattern of the rearrangement wiring in 1st, 3rd embodiment. The top view of the gyro sensor of 1st, 3rd embodiment. 5A, FIG. 5B, and FIG. 5C schematically show the AA cut surface, the BB cut surface, and the CC cut surface of FIG. 4 in the first embodiment, respectively. Figure. The perspective view of a 3 axis gyro sensor module. The top view which shows an example of the pattern of the rearrangement wiring in 2nd Embodiment. The top view of the gyro sensor of 2nd Embodiment. FIG. 9A, FIG. 9B, and FIG. 9C schematically show the AA cut surface, the BB cut surface, and the CC cut surface of FIG. 8 in the second embodiment, respectively. Figure. The layout diagram of signal processing IC in a 3rd embodiment. The layout diagram of signal processing IC in a 3rd embodiment. FIGS. 12A, 12B, and 12C schematically show the AA cut surface, the BB cut surface, and the CC cut surface of FIG. 4 in the third embodiment, respectively. Figure. The figure which shows typically the CC cut surface of FIG. 4 in the modification of 3rd Embodiment.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. Also, not all of the configurations described below are essential constituent requirements of the present invention.

  Hereinafter, an angular velocity detection device (gyro sensor) that detects an angular velocity will be described as an example of the inertial sensor. However, the present invention can detect any of various physical quantities such as angular velocity, angular acceleration, acceleration, and force. It can be applied to inertial sensors that can.

1. First Embodiment FIG. 1 is a functional block diagram of a gyro sensor of this embodiment. The gyro sensor 1 of this embodiment includes a signal processing IC (integrated circuit device) 10 and a sensor element 20.

  The sensor element 20 of the present embodiment is configured as a so-called double T type in which two T-type driving vibration arms 22 and 23 and one detection vibration arm 24 therebetween are connected by a base 21. However, the sensor element 20 may be, for example, a tuning fork type, or may be a sound piece type having a triangular prism shape, a quadrangular prism shape, a cylindrical shape, or the like. Alternatively, a silicon semiconductor substrate may be processed into a comb shape.

The sensor element 20 is, for example, piezoelectric single crystal such as quartz (SiO ₂ ), lithium tantalate (LiTaO ₃ ), lithium niobate (LiNbO ₃ ), or piezoelectric ceramics such as piezoelectric ceramics such as lead zirconate titanate (PZT). A material may be used, or a structure in which a piezoelectric thin film such as zinc oxide (ZnO) or aluminum nitride (AlN) sandwiched between drive electrodes is arranged on a part of the surface of a silicon semiconductor may be used. .

  Two drive electrodes and a ground electrode (both not shown) are formed on the surfaces of the drive vibration arms 22 and 23 and the base 21 of the sensor element 20, and when an AC voltage signal is applied to one of the drive electrodes, the drive vibration is generated. The arms 22 and 23 bend and vibrate (excitation vibration) in which the tips of the arms 22 repeat and approach each other due to the inverse piezoelectric effect. If the amplitudes of the bending vibrations of the drive vibration arms 22 and 23 are equal, the drive vibration arms 22 and 23 always bend and vibrate with respect to the detection vibration arm 24, so that the detection vibration arm 24 does not vibrate. .

  In this state, when an angular velocity with the axis perpendicular to the excitation vibration surface as the rotation axis is applied to the sensor element 20, the driving vibration arms 22 and 23 have a Coriolis force in a direction perpendicular to both the bending vibration direction and the rotation axis. Get. As a result, the symmetry of the bending vibration of the drive vibrating arms 22 and 23 is lost, and the detection vibrating arm 24 performs bending vibration so as to maintain a balance. The phase of the bending vibration of the detection vibration arm 24 and the bending vibration (excitation vibration) of the drive vibration arms 22 and 23 due to the Coriolis force is shifted by 90 °.

  Actually, the amplitudes of the bending vibrations of the drive vibrating arms 22 and 23 are slightly different even when no Coriolis force is applied, so that the detection vibrating arm 24 slightly bends to maintain balance. This bending vibration is called leakage vibration and has the same phase as the bending vibration (excitation vibration) of the drive vibration arms 22 and 23.

  Two detection electrodes and a ground electrode (both not shown) are formed on the surfaces of the detection vibration arm 24 and the base portion 21 of the sensor element 20, and AC charges based on these bending vibrations are detected by the piezoelectric effect. Occurs on the electrode. The AC charge generated based on the Coriolis force changes according to the magnitude of the Coriolis force (in other words, the magnitude of the angular velocity applied to the sensor element 20), whereas the AC charge generated based on the leakage vibration is The Coriolis force applied to the sensor element 20 is constant regardless of the magnitude (angular velocity magnitude).

  A weight portion 22a and a weight portion 22b are formed at the tip of the driving vibration arm 22 of the sensor element 20. Similarly, a weight part 23 a and a weight part 23 b are formed at the tip of the drive vibration arm 23. By forming the weight portion at the tips of the drive vibrating arms 22 and 23, the Coriolis force can be increased and a desired resonance frequency can be obtained with a relatively short vibrating arm. Similarly, a weight portion 24 a and a weight portion 24 b are also formed at the tip of the detection vibrating arm 24. By forming the weight portion at the tip of the detection vibrating arm 24, the AC charge generated in the two detection electrodes can be increased.

  Plated layers (not shown) are formed on the surfaces of the four weight portions 22a, 22b, 23a, and 23b at the tips of the drive vibrating arms 22 and 23, and the plated layers are formed by irradiating the surfaces of these weight portions with laser. The mass of the drive vibrating arms 22 and 23 can be finely adjusted by removing a part of. That is, the weight portions 22a, 22b, 23a, and 23b also function as mass adjusting portions. Thereby, while adjusting the resonance frequency of the drive vibration arms 22 and 23, the amplitude of the bending vibration of the drive vibration arms 22 and 23 can be made equal.

  The two drive electrodes of the sensor element 20 are connected to the external output terminal 171 (S4 terminal) and the external input terminal 172 (S3 terminal) of the signal processing IC 10, respectively. The two detection electrodes of the sensor element 20 are connected to the external input terminal 173 (S1 terminal) and the external input terminal 174 (S2 terminal) of the signal processing IC 100, respectively.

  The signal processing IC 10 includes a drive circuit 100, two QV amplifiers 110 and 120, a detection circuit 130, a reference block 140, and a logic circuit 150. The signal processing IC 10 is supplied with a power supply potential VDD (for example, 3 V) and a ground potential GND (0 V) from an external input terminal 178 (VDD terminal) and an external input terminal 179 (GND terminal), respectively.

  The drive circuit 100 generates a drive signal for exciting and vibrating the sensor element 20 and supplies the drive signal to one drive electrode of the sensor element 20 via the external output terminal 171. Further, the drive circuit 100 receives an oscillation current generated in the other drive electrode due to the excitation vibration of the sensor element 20 via the external input terminal 172, and the drive circuit 100 receives the drive signal so that the amplitude of the oscillation current is kept constant. Feedback control of amplitude level.

  The two QV amplifiers 110 and 120 have AC charges (an example of the first detection signal and the second detection signal) generated in each of the two detection electrodes of the sensor element 20 via the external input terminals 173 and 174. Are input and converted into AC voltage signals. The AC charges generated in each of the two detection electrodes are 180 ° out of phase with each other and have the same amplitude. Therefore, by using the same circuit and the same layout for the QV amplifiers 110 and 120, the QV amplifiers 110 and 120 output alternating voltage signals having different phases by 180 ° and the same amplitude. This amplitude changes according to the magnitude of the Coriolis force applied to the sensor element 20 (the magnitude of the angular velocity).

  The detection circuit 130 differentially amplifies the output signals of the QV amplifiers 110 and 120, and then performs synchronous detection to detect only the angular velocity component and generate a voltage level signal (angular velocity signal) corresponding to the magnitude of the angular velocity. . This angular velocity signal is output to the outside via the external output terminal 177, and is A / D converted by a microcomputer (not shown) connected to the external output terminal 177, for example, and used as various angular velocity data. Note that an A / D converter may be incorporated in the signal processing IC 10 and digital data representing the angular velocity may be output to the outside via, for example, a logic circuit 150 (for example, a serial interface).

  The reference block 140 generates a reference voltage for the drive circuit 100 and the detection circuit 130 from the power supply potential VDD and the GND potential GND.

  The logic circuit 150 includes, for example, a serial interface, and the adjustment data for a memory (not shown) included in the logic circuit 150 by the two-line logic based on the clock signal and the serial data signal via the external input terminal 175 and the external input / output terminal 176. Write and read processing, test mode setting processing for an internal register (not shown), and the like are performed.

  In this embodiment, by setting a predetermined test mode, the output signals of the QV amplifiers 110 and 120 are output to the outside via the external output terminal 180 (M1 terminal) and the external output terminal 181 (M2 terminal), respectively. Can be done. By setting the test mode and monitoring the signal output from the external output terminal 180 and the signal output from the external output terminal 181, the QV amplifiers 110 and 120 can be directly evaluated.

  2-5 is a figure for demonstrating the structure of the gyro sensor 1. FIG. FIG. 2 is a plan view (layout diagram) showing the arrangement of each block of the signal processing IC 10.

  As shown in FIG. 2, an integrated circuit (a driving circuit 100, QV amplifiers 110 and 120, a detection circuit 130, a reference block 140, a logic circuit 150) is formed on the first surface 11A (upper surface) of the semiconductor substrate 11 of the signal processing IC 10. A plurality of pads (electrodes) 70-1 to 70-n and 80 to 83 are formed. Specifically, the drive circuit 100, the detection circuit 130, the reference block 140, and the logic circuit 150 are formed on the first surface 11A of the semiconductor substrate 11 in a central portion so as to be rectangular as a whole so as to surround it. Further, pads 70-1 to 70-n and 80 to 83 are formed in the peripheral portion. The QV amplifier 110 is formed in the left pad arrangement region, and the QV amplifier 120 is formed in the right pad arrangement region.

  The pads (electrodes) 70-1 to 70-n are external electrodes for connecting the signal processing IC 10 and an external device.

  The pads 70-1 and 70-n are output pads that function as the external output terminals 180 (M1 terminal) and 181 (M2 terminal) in FIG. 1, respectively. In the present embodiment, the wirings 112 and 122 for connecting the outputs of the QV amplifiers 110 and 120 and the pads 70-1 and 70-n, respectively, when the predetermined test mode is set are provided on the first surface of the semiconductor substrate 11. 11A.

  The pads 70-2 to 70- (n-1) are any one of the external input terminal 175, the external input / output terminal 176, the external output terminal 177, the external input terminals 178 and 179, and the external terminals not shown in FIG. Function as. For example, the pads 70-2 and 70- (n-1) are power input pads that function as the external input terminals 178 (VDD terminal) and 179 (GND terminal) in FIG. 1, respectively, and the pads 70-2 and 70- ( The power supply potential VDD and the ground potential GND are respectively supplied from n−1).

  The pads 70-1 to 70-n are formed of titanium (Ti), titanium nitride (TiN), aluminum (Al), copper (Cu), or an alloy containing these.

  The pads 80 to 83 are for connecting the signal processing IC 10 and the sensor element 20. The pad 82 is an output pad that functions as the external output terminal 171 (S4 terminal) in FIG. 1, and a drive signal is output from the pad 82 and supplied to the sensor element 20. The pad 80 is an input pad that functions as the external input terminal 172 (S3 terminal) in FIG. 1, and an oscillation current is input from the sensor element 20. The pads 81 and 83 are input pads that function as the external input terminals 173 (S1 terminal) and 174 (S2 terminal) in FIG. 1, respectively, and are generated from the pads 81 and 83 at the two detection electrodes of the sensor element 20, respectively. AC charge is input.

  The gyro sensor 1 of the present embodiment is provided with one or a plurality of rearrangement wirings facing the upper surface of the signal processing IC 10 (on the first surface 11A side of the semiconductor substrate 11). FIG. 3 is a plan view showing an example of a rearrangement wiring pattern stacked on the upper surface of the signal processing IC 10.

  As shown in FIG. 3, the rearrangement wirings 30-1 to 30-n, 30a, 30b, 30c, and 30d cover the pads 70-1 to 70-n, 80, 81, 82, and 83 of the signal processing IC 10, respectively. And is electrically connected to each pad.

  The rearrangement wiring 30e is electrically connected to a GND potential pad (for example, pad 70- (n-1)) of the signal processing IC 10.

  N wirings (not shown) for external connection are connected to the rearrangement wirings 30-1 to 30-n, and the power supply potential VDD and the ground potential GND are supplied to the gyro sensor 1 through these wirings. Various external signals are input / output.

  The relocation wiring 30 includes gold (Au), copper (Cu), silver (Ag), titanium (Ti), tungsten (W), titanium tungsten (TiW), titanium nitride (TiN), nickel (Ni), It is formed of nickel vanadium (NiV), chromium (Cr), aluminum (Al), palladium (Pd), or the like.

  The gyro sensor 1 includes a sensor element 20 having a plurality of electrodes (two drive electrodes, two detection electrodes, and a ground electrode) formed on a lower surface (a surface facing the first surface 11A of the semiconductor substrate 11). It has a structure arranged on the upper surface of the arrangement wiring layer. FIG. 4 is a plan view of the gyro sensor 1 in which the sensor element 20 is arranged on the upper surface of the rearrangement wiring layer of FIG.

  As shown in FIG. 4, the base 21 of the sensor element 20 has four holding arms 25 a, 25 b, 25 c, 25 d (in addition to two drive vibrating arms 22, 23 and one detection vibrating arm 24). Are omitted). The holding arms 25a, 25b, 25c, and 25d extend from the base 21 to the upper surfaces of the rearrangement wirings 30a, 30b, 30c, and 30d.

  One drive electrode and the other drive electrode are formed on the lower surfaces of the holding arms 25a and 25c, respectively (not shown), and these two drive electrodes are connected to the rearrangement wirings 30a, 30a through the connection terminals 60 and 62, respectively. 30c is electrically connected.

  One detection electrode and the other detection electrode are formed on the lower surfaces of the holding arms 25b and 25d, respectively. These two detection electrodes are electrically connected to the rearrangement wirings 30b and 30d via the connection terminals 61 and 63, respectively. It is connected to the.

  In this way, the holding arms 25a, 25b, 25c, and 25d are connected to the connection terminals 60, 61, 62, and 63, respectively, so that the sensor element 20 is fixed on the IC 10.

  The connection terminals 60, 61, 62, and 63 are formed of a conductive material such as gold (Au), copper (Cu), aluminum (Al), solder balls, or solder paste printing.

  The GND potential rearrangement wiring 30e is formed so as to cover the four weight portions 22a, 22b, 23a, and 23b formed at the tips of the two vibrating arms 22 and 23 of the sensor element 20. That is, the rearrangement wiring 30e includes all of the weight portions 22a, 22b, 23a, and 23b that function as the mass adjustment portion of the sensor element 20 in a plan view as viewed from the direction orthogonal to the first surface 11A of the semiconductor substrate 11. They are arranged so as to overlap. This is because when the mass is finely adjusted by irradiating the weights 22a, 22b, 23a, 23b with a laser to remove a part of the plating layer (not shown) formed on the surface of these weights, This is because the laser transmitted through the element 20 is absorbed by the rearrangement wiring 30e and the laser reaches the signal processing IC 10 to prevent the circuit from being destroyed.

  The rearrangement wiring 30e is electrically connected to a ground electrode (not shown) formed on the lower surface of the sensor element 20.

  5A, FIG. 5B, and FIG. 5C are diagrams schematically showing the AA cut surface, the BB cut surface, and the CC cut surface of FIG. 4, respectively.

  As shown in FIG. 5A, the rearrangement wiring 30 a is connected to the drive electrode 26 a formed on the lower surface of the holding arm 25 a of the sensor element 20 via the connection terminal 60 and also connected to the signal via the wiring 51. It is connected to the pad 80 of the processing IC 10.

  The rearrangement wiring 30 b is connected to the detection electrode 27 a formed on the lower surface of the holding arm 25 b of the sensor element 20 through the connection terminal 61 and is connected to the pad 81 of the signal processing IC 10 through the wiring 52. .

  The rearrangement wiring 30-1 is connected to the pad 70-1 of the signal processing IC 10 through the wiring 50. The signal processing IC 10 is connected to an external device via the rearrangement wiring 30-1. In this embodiment, by setting to a predetermined test mode, the output signal of the QV amplifier 110 can be monitored from the outside via the rearrangement wiring 30-1.

  As shown in FIG. 5B, the rearrangement wiring 30 c is connected to the drive electrode 26 b formed on the lower surface of the holding arm 25 c of the sensor element 20 via the connection terminal 62 and also connected to the signal via the wiring 54. It is connected to the pad 82 of the processing IC 10.

  The rearrangement wiring 30d is connected to the detection electrode 27b formed on the lower surface of the holding arm 25d of the sensor element 20 through the connection terminal 63, and is connected to the pad 83 of the signal processing IC 10 through the wiring 55. .

  The rearrangement wiring 30-n is connected to the pad 70-n of the signal processing IC 10 through the wiring 53. The signal processing IC 10 is connected to an external device via the rearrangement wiring 30-n. In the present embodiment, by setting to a predetermined test mode, the output signal of the QV amplifier 120 can be monitored from the outside via the rearrangement wiring 30-n.

  5A, 5B, and 5C, an insulating layer 40 having a certain thickness is provided between the semiconductor substrate 11 (signal processing IC 10) and the sensor element 20. Is provided. The insulating layer 40 functions as a stress relaxation layer that absorbs a stress difference caused by a difference in temperature coefficient between the semiconductor substrate 11 and the sensor element 20. Thereby, the sensor element 20 can maintain stable oscillation.

  The insulating layer 40 is made of an insulating material such as polyimide resin, epoxy resin, acrylic resin, phenol resin, BCB (benzocyclobutene), or PBO (polybenzoxazole).

  In the present embodiment, as shown in FIGS. 3, 4, and 5, the two QV amplifiers 110 and 120 have the sensor element 20 in a plan view viewed from a direction orthogonal to the first surface 11 </ b> A of the semiconductor substrate 11. These are arranged so as not to overlap with the drive vibration arms 22 and 23 and the detection vibration arm 24 which are the vibration parts. Thereby, the coupling capacitance between the drive electrodes 26a and 26b and the detection electrodes 27a and 27b whose potentials change according to the excitation vibration of the sensor element 20 and the QV amplifiers 110 and 120 can be reduced.

  Further, in the present embodiment, the two QV amplifiers 110 and 120 are arranged so as not to overlap all the rearrangement wirings 30 in a plan view viewed from a direction orthogonal to the first surface 11A of the semiconductor substrate 11. Yes. Thereby, in particular, the rearrangement wirings 30a, 30b, 30c, and 30d whose potential changes according to the excitation vibration of the sensor element 20, and the rearrangement wirings 30-1 to 30-30 whose potential changes according to the input / output of an external signal. The coupling capacitance between −n and the QV amplifiers 110 and 120 can be reduced.

  As the insulating layer 40 is made thicker, the distance between the QV amplifiers 110 and 120 and the sensor element 20 or the rearrangement wiring 30 is increased, and the coupling capacitance can be further reduced.

  As described above, the QV amplifiers 110 and 120 are not overlapped with the vibration portion of the sensor element 20 and the rearrangement wiring 30 in which the potential changes in the plan view as viewed from the direction orthogonal to the first surface 11A of the semiconductor substrate 11. By disposing, the characteristic fluctuation of the QV amplifiers 110 and 120 can be reduced.

  By the way, the gyro sensor 1 of the present embodiment detects angular velocity around one axis, and the three gyro sensors 1 are used so that the detection axes are independent from each other, so that the angular velocity around the three axes is obtained. A gyro sensor module to be detected can be configured. For example, in the gyro sensor module 200 shown in FIG. 6, two support plates 3 (3A, 3B) are provided on the substrate 2 (the support plate 3A is bent in an L shape), and the gyro sensor 1A (signal processing) IC 10A and sensor element 20A) and gyro sensor 1B (including signal processing IC 10B and sensor element 20B) are supported by support plate 3A, and gyro sensor 1C (including signal processing IC 10C and sensor element 20C) is supported by support plate 3B. By being supported, the three gyro sensors 1A, 1B, and 1C are arranged in directions in which the detection axes are orthogonal to each other.

  The flexible printed circuit board 4 (4A, 4B, 4C) is provided on the substrate 2 and n relocation wirings (rearrangement wirings 30-1 to 30-n in FIG. 4) of the gyro sensors 1A, 1B, 1C. An external terminal (not shown) is connected.

  In FIG. 6, the gyro sensors 1 </ b> A, 1 </ b> B, and 1 </ b> C are covered and the package for forming the airtight space is omitted.

  The gyro sensor of this embodiment is assumed to be used as a part of such a three-axis gyro sensor module, and the flexible printed boards 4B and 4C of the gyro sensors 1B and 1C are provided on the board 2 outside. In order to easily connect to the terminals, as shown in FIG. 2, the pads 70-1 to 70-n of the signal processing IC 10 are one side of the rectangular semiconductor substrate 11 (an example of the first side, 2 are arranged in a row in the peripheral portion along the upper side).

  The QV amplifiers 110 and 120 are preferably arranged at positions far from the pads 70-1 to 70-n so as not to be affected by signals input or output via the pads 70-1 to 70-n. Further, since the minute currents input to the QV amplifiers 110 and 120 are respectively supplied from the two detection electrodes of the sensor element 20, the QV amplifiers 110 and 120 are set so that the input signal lines of the QV amplifiers 110 and 120 are as short as possible. Is preferably located near the pads 81 and 83, respectively.

  For these reasons, in this embodiment, as shown in FIG. 2, peripheral pads 70-1 to 70-1 along the left side of the rectangular semiconductor substrate 11 (an example of a second side orthogonal to the first side). The pad 81 and the QV amplifier 110 are formed as far as possible from 70-n, and the peripheral pads 70-1 to 70-n along the right side (an example of a third side parallel to the second side) are formed as much as possible. A pad 83 and a QV amplifier 120 are formed at a distant position.

  Incidentally, the QV amplifier 110 (an example of the first circuit) and the QV amplifier 120 (an example of the second circuit) are symmetrical circuits using the same circuit and the same layout, but the output signal of the QV amplifier 110 ( A wiring 112 (an example of the first wiring) that propagates an example of the first signal) to the pad 70-1 (an example of the first electrode) and an output signal (an example of the second signal) of the QV amplifier 120 are pads. If there is a large difference in the parasitic resistance or parasitic capacitance of the wiring 122 (an example of the second wiring) that propagates to 70-n (an example of the second electrode), the output signals of the QV amplifiers 110 and 120 are transferred to the pad 70-. Even when monitoring from 1,70-n, it is difficult to perform proper characteristic evaluation. However, because the wirings 112 and 122 are relatively long due to the restrictions on the arrangement of the QV amplifiers 110 and 120, differences in parasitic resistance and parasitic capacitance are likely to occur.

  Therefore, in the present embodiment, as shown in FIG. 2, in the peripheral portion along the first side (upper side) of the semiconductor substrate 11, the pads 70-1 and 70-n are arranged such that the pads 70-1 and 70-n are at both ends. The wirings 112 and 122 are shortened as much as possible by arranging 70-n, and the wiring 112 and the wiring 122 are symmetrical shapes in a plan view viewed from the direction orthogonal to the first surface 11A of the semiconductor substrate 11. Is formed. That is, the wiring 112 and the wiring 122 are formed so that the width, the length, and the number of bends are exactly the same. By so doing, differences in parasitic resistance and parasitic capacitance between the wiring 112 and the wiring 122 can be reduced, so that the QV amplifiers 110 and 120 can be evaluated appropriately.

  Further, it is desirable that the wiring layers of the wirings 112 and 122 are the same and the layout around the wirings 112 and 122 is also the same. In this way, the parasitic resistance and parasitic capacitance of the wiring 112 and the wiring 122 can be made substantially the same.

  It should be noted that the shape of the wiring 112 and the shape of the wiring 122 are acceptable even if they are not strictly symmetric as long as the difference in the characteristic evaluation of the QV amplifiers 110 and 120 is negligible.

  Further, in the present embodiment, as shown in FIGS. 3, 4, and 5 (C), the wirings 112 and 122 are sensors in a plan view viewed from a direction orthogonal to the first surface 11 </ b> A of the semiconductor substrate 11. The drive vibration arms 22 and 23 and the detection vibration arm 24 which are vibration parts of the element 20 are arranged so as not to overlap. Thereby, the coupling capacitance between the drive electrodes 26a and 26b and the detection electrodes 27a and 27b whose potentials change according to the excitation vibration of the sensor element 20 and the wirings 112 and 122 can be reduced.

  Further, in the present embodiment, the wirings 112 and 122 are rearranged wirings 30a whose potential changes according to the excitation vibration of the sensor element 20 in a plan view as viewed from a direction orthogonal to the first surface 11A of the semiconductor substrate 11. , 30b, 30c, 30d and the rearrangement wirings 30-2 to 30- (n-1) whose potential changes according to the input / output of an external signal. Thereby, the coupling capacitance between the wirings 112 and 122 and these rearrangement wirings can be reduced.

  As the insulating layer 40 is made thicker, the distance between the wirings 112 and 122 and the sensor element 20 and the rearrangement wiring 30 is increased, and the coupling capacitance can be further reduced.

  As described above, according to the gyro sensor of the first embodiment, since the sensor element 20 is mounted on the signal processing IC 10 by using the rearrangement wiring, the gyro sensor can be easily downsized. is there. In addition, since the symmetry between the wiring 112 and the wiring 122 is ensured, the QV amplifiers 110 and 120 can be properly evaluated.

2. Second Embodiment Since the functional block diagram of the gyro sensor and the layout diagram of the signal processing IC 10 of the second embodiment are the same as those of FIGS. 1 and 2, respectively, illustration and description thereof are omitted.

  FIG. 7 is a plan view illustrating an example of a pattern of rearrangement wiring stacked on the upper surface of the signal processing IC 10 in the second embodiment. 8 is a plan view of the gyro sensor 1 of the second embodiment in which the sensor element 20 is arranged on the upper surface of the rearrangement wiring layer of FIG. 7, and FIG. 9 (A), FIG. 9 (B) and FIG. (C) is a figure which shows typically the AA cut surface, BB cut surface, and CC cut surface of FIG. 8, respectively. In the second embodiment, the same elements as those in the first embodiment are denoted by the same reference numerals.

  The gyro sensor 1 of the second embodiment is the same as that of the first embodiment except for the shape of the rearrangement wiring 30e. As shown in FIGS. 7 and 9, in the second embodiment, the wiring 112 and the wiring 122 have a GND potential (fixed potential) in a plan view viewed from a direction orthogonal to the first surface 11 </ b> A of the semiconductor substrate 11. It arrange | positions so that it may overlap with the rearrangement wiring 30e supplied. With the rearrangement wiring 30e, the wirings 112 and 122 can be shielded from the drive electrodes 27a and 27b of the sensor element 20.

  As described above, according to the gyro sensor of the second embodiment, the QV amplifiers 110 and 120 can be evaluated by actively using the rearrangement wiring of the ground potential (fixed potential) as the shield wiring of the wirings 112 and 122. Reliability can be increased. Further, according to the second embodiment, similarly to the first embodiment, since the sensor element 20 is mounted on the signal processing IC 10 using the rearrangement wiring, the gyro sensor can be easily downsized. . In particular, since the shielding effect of the wirings 112 and 122 by the rearrangement wiring can be obtained even if the thickness of the stress relaxation layer 40 is reduced, it is also possible to form the stress relaxation layer 40 with a minimum thickness that can provide the stress relaxation effect. It is possible to further downsize the gyro sensor.

  7, 8, and 9, the rearrangement wiring 30 e may be formed so as to cover the QV amplifiers 110 and 120. In other words, the QV amplifiers 110 and 120 are arranged so as to overlap with the rearrangement wiring 30e to which the GND potential (fixed potential) is supplied in a plan view viewed from a direction orthogonal to the first surface 11A of the semiconductor substrate 11. It may be. In this way, the QV amplifiers 110 and 120 can be shielded from the drive electrodes 27a and 27b of the sensor element 20. In this way, by actively using the rearrangement wiring of the ground potential (fixed potential) as the shield wiring of the QV amplifiers 110 and 120, the characteristic variation of the QV amplifiers 110 and 120 can be reduced.

3. Third Embodiment A functional block diagram of a gyro sensor according to a third embodiment, a plan view of a rearrangement wiring pattern, and a plan view of the gyro sensor 1 in which the sensor element 20 is arranged on the upper surface of the rearrangement wiring layer are shown in FIG. Since it is the same as FIG. 3 and FIG. 4, its illustration and description are omitted.

  FIG. 10 is a plan view (layout diagram) showing the arrangement of each block of the signal processing IC 10 in the third embodiment. FIG. 11 is a plan view (layout diagram) showing the arrangement of each block of the signal processing IC 10 in which the wiring patterns 90 and 92 of FIG. 10 are omitted. 12 (A), 12 (B), and 12 (C) schematically show the AA cut surface, the BB cut surface, and the CC cut surface of FIG. 4 in the third embodiment, respectively. FIG. Note that FIG. 12C is illustrated in an enlarged manner only twice in the vertical direction with respect to FIGS. 12A and 12B for easy understanding of details. In 3rd Embodiment, the same code | symbol is attached | subjected to the same element as 1st Embodiment.

  The gyro sensor 1 of the third embodiment is the same as that of the first embodiment except for the layout of the signal processing IC 10. As shown in FIGS. 10, 11, and 12 (C), the signal processing IC 10 in the third embodiment has shield wirings 90 and 92 that cover the upper surfaces of the wirings 112 and 122, respectively. In addition, shield wiring 94 is formed on both sides of the wiring 112, and shield wiring 96 is formed on both sides of the wiring 122. The shield wirings 90, 92, 94, and 96 are electrically connected to, for example, the pad 70- (n-1) (not shown) and are at the GND potential. That is, in the signal processing IC 10 according to the third embodiment, the shield wiring 90 (an example of the first shield wiring) in which the GND potential (fixed potential) is supplied to the first surface 11A of the semiconductor substrate 11 is the semiconductor substrate 11. It is formed so as to overlap with the wiring 112 in a plan view viewed from a direction orthogonal to the first surface 11A. Similarly, a shield wiring 92 (an example of a second shield wiring) to which a GND potential (fixed potential) is supplied to the first surface 11A of the semiconductor substrate 11 is orthogonal to the first surface 11A of the semiconductor substrate 11. It is formed so as to overlap with the wiring 122 in a plan view viewed from the direction. In addition, a shield wiring 94 (an example of the first shield wiring) to which a GND potential (fixed potential) is supplied to the first surface 11A of the semiconductor substrate 11 is orthogonal to the first surface 11A of the semiconductor substrate 11. The wiring 112 is sandwiched in a plan view as viewed from above. Similarly, a shield wiring 96 (an example of a second shield wiring) to which a GND potential (fixed potential) is supplied to the first surface 11A of the semiconductor substrate 11 is orthogonal to the first surface 11A of the semiconductor substrate 11. It is formed so as to sandwich the wiring 122 in a plan view viewed from the direction.

  For example, when the signal processing IC 10 is manufactured by a three-layer wiring process, the wirings 112 and 122 are laid out by the wiring layer 2, the shield wirings 90 and 92 are laid out by the uppermost wiring layer 3, and the wirings 94 and 96 are wired. By laying out with the layer 2, the signal processing IC 10 in the third embodiment can be realized. Alternatively, the wirings 112 and 122 may be laid out with the wiring layer 1, the shield wirings 90 and 92 may be laid out with the wiring layer 2 or the wiring layer 3, and the wirings 94 and 96 may be laid out with the wiring layer 1.

  The shield wirings 90, 92, 94, 96 shield the wirings 112, 122 from the rearrangement wirings 30-1 to 30 -n, 30 a, 30 b, 30 c, 30 d whose potential changes, and nodes inside the signal processing IC 10. be able to. One of the shield wiring 90 and the shield wiring 94 may be omitted. Similarly, one of the shield wiring 92 and the shield wiring 96 may be omitted. Further, as shown in FIG. 13, shield wirings 98 and 99 that cover the lower surfaces of the wirings 112 and 122 may be further provided in the configuration of FIG.

  As described above, according to the gyro sensor of the third embodiment, the shield wiring of the ground potential (fixed potential) is formed in the signal processing IC 10 to shield the wirings 112 and 122, thereby evaluating the QV amplifiers 110 and 120. Reliability can be increased. Further, according to the third embodiment, since the sensor element 20 is mounted on the signal processing IC 10 using the rearrangement wiring as in the first embodiment, the gyro sensor can be easily downsized. . In particular, even if the thickness of the stress relaxation layer 40 is reduced, the shielding effect of the wirings 112 and 122 and the QV amplifiers 110 and 120 by the shield wiring inside the signal processing IC can be obtained. It is also possible to form the gyro sensor with a minimum thickness that is possible, and to further reduce the size of the gyro sensor.

  As shown in FIGS. 10, 12, and 13, the shield wirings 90 and 92 may be formed so as to cover the upper surfaces of the QV amplifiers 110 and 120, respectively. That is, the shield wirings 90 and 92 to which the GND potential (fixed potential) is supplied to the first surface 11A of the semiconductor substrate 11 are QV in a plan view as viewed from the direction orthogonal to the first surface 11A of the semiconductor substrate 11. The amplifiers 110 and 120 may be formed so as to overlap each other. In this way, the QV amplifiers 110 and 120 are connected to the rearrangement wirings 30-1 to 30-n, 30a, 30b, 30c, and 30d whose potentials are changed by the shield wirings 90 and 92 and the nodes inside the signal processing IC 10. Can be shielded. The shield wirings 90 and 92 have an effect of shielding the QV amplifiers 110 and 120 from the drive electrodes 27a and 27b of the sensor element 20. Therefore, fluctuations in the characteristics of the QV amplifiers 110 and 120 can be reduced.

  In addition, this invention is not limited to this embodiment, A various deformation | transformation implementation is possible within the range of the summary of this invention.

  For example, the second embodiment and the third embodiment may be combined. That is, the rearrangement wiring 30e to which the GND potential (fixed potential) is supplied is formed so as to overlap the wirings 112 and 122 in the plan view as viewed from the direction orthogonal to the first surface 11A of the semiconductor substrate 11, and the GND The shield wirings 90 and 92 inside the signal processing IC 10 to which a potential (fixed potential) is supplied may be formed so as to overlap the wirings 112 and 122, respectively. In this case, since only the rearrangement wiring 30e has a shielding effect in the upper surface direction of the QV amplifiers 110 and 120, the wirings 90 and 92 covering the upper surfaces of the QV amplifiers 110 and 120 may be omitted.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

1, 1A, 1B, 1C Gyro sensor, 2 substrate, 3, 3A, 3B support plate, 4, 4A, 4B, 4C flexible printed circuit board, 10, 10A, 10B, 10C signal processing IC (integrated circuit device), 11 semiconductor Substrate, 11A First surface of semiconductor substrate, 20, 20A, 20B, 20C Sensor element, 21 base, 22 driving vibration arm, 22a, 22b weight portion, 23 driving vibration arm, 23a, 23b weight portion, 24 detection vibration arm 24a, 24b Weight part, 25a-25d Holding arm, 26a, 26b Drive electrode, 27a, 27b Detection electrode, 30-1-30-n, 30a-30e Relocation wiring, 40 Insulating layer (stress relaxation layer), 50 ~ 55 wiring, 60 ~ 63 connection terminal, 70-1 ~ 70-n, 80 ~ 83 pad, 90, 92, 94, 96, 98, 99 shield Line, 100 drive circuit, 110 QV amplifier, 112 wiring, 120 QV amplifier, 122 wiring, 130 detection circuit, 140 reference block, 150 logic circuit, 171 external output terminal, 172, 173, 174, 175 external input terminal, 176 external Input / output terminal, 177 External output terminal, 178, 179 External input terminal, 180, 181 External output terminal, 200 Gyro sensor module

Claims (12)

A semiconductor substrate having an electrode formed on a first surface;
A sensor element having a vibrating portion and having an electrode formed on a surface facing the first surface of the semiconductor substrate;
Including one or a plurality of rearrangement wirings provided to face the first surface of the semiconductor substrate,
At least one of the relocation wirings is
Electrically connecting the electrode formed on the semiconductor substrate and the electrode formed on the sensor element;
The semiconductor substrate is
On the first surface, a first circuit and a second circuit that respectively generate a first signal and a second signal having symmetry, a first wiring, a second wiring, and the first wiring A first electrode to which the first signal is supplied via the wiring, and a second electrode to which the second signal is supplied via the second wiring,
An inertial sensor, wherein a shape of the first wiring and a shape of the second wiring have symmetry in a plan view viewed from a direction orthogonal to the first surface of the semiconductor substrate. In claim 1,
The first wiring and the second wiring are:
An inertial sensor arranged so as not to overlap the vibration portion of the sensor element in a plan view as viewed from a direction orthogonal to the first surface of the semiconductor substrate. In claim 1 or 2,
The first wiring and the second wiring are:
An inertial sensor arranged so as not to overlap the rearrangement wiring whose potential changes in a plan view viewed from a direction orthogonal to the first surface of the semiconductor substrate. In any one of Claims 1 thru | or 3,
The semiconductor substrate is
A plurality of external electrodes that are rectangular in a plan view viewed from a direction orthogonal to the first surface and that are used to input or output an external signal are formed in a row on the periphery along the first side,
Two of the external electrodes are an inertial sensor that is the first electrode and the second electrode. In claim 4,
The first electrode and the second electrode are:
An inertial sensor that is the two external electrodes at both ends among the plurality of external electrodes formed in the row. In claim 4 or 5,
The first circuit includes:
Formed in a peripheral portion along a second side orthogonal to the first side;
The second circuit includes:
An inertial sensor formed in a peripheral portion along a third side parallel to the second side. In claim 6,
The first wiring is
Formed in a peripheral portion along the second side;
The second wiring is
An inertial sensor formed in a peripheral portion along the third side. In any one of Claims 1 thru | or 7,
At least one of the relocation wirings is supplied with a fixed potential,
The first wiring and the second wiring are:
An inertial sensor disposed so as to overlap the rearrangement wiring to which the fixed potential is supplied in a plan view as viewed from a direction orthogonal to the first surface of the semiconductor substrate. In any one of Claims 1 thru | or 8.
The semiconductor substrate is
A first shield wiring to which a fixed potential is supplied to the first surface overlaps the first wiring in a plan view as viewed from a direction orthogonal to the first surface, or the first wiring And the second shield wiring to which a fixed potential is supplied overlaps the second wiring in a plan view viewed from a direction orthogonal to the first surface or the second wiring. An inertial sensor formed so as to sandwich the wiring. In any one of Claims 1 thru | or 9,
The sensor element is
A mass adjusting part capable of adjusting the mass is formed in the vibrating part,
At least one of the relocation wirings is
An inertial sensor arranged so as to overlap with all of the mass adjusting portions of the sensor element in a plan view as viewed from a direction orthogonal to the first surface of the semiconductor substrate. In any one of Claims 1 thru | or 10.
An inertial sensor further comprising an insulating layer provided between the semiconductor substrate and the sensor element and configured to absorb a stress difference caused by a difference in temperature coefficient between the semiconductor substrate and the sensor element. In any one of Claims 1 thru | or 11,
The first circuit is
A QV amplifier to which a first detection signal of the sensor element is input;
The second circuit is
An inertial sensor, which is a QV amplifier to which a second detection signal of the sensor element is input.

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