JP2012191189A5 - - Google Patents

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Publication number
JP2012191189A5
JP2012191189A5 JP2012034646A JP2012034646A JP2012191189A5 JP 2012191189 A5 JP2012191189 A5 JP 2012191189A5 JP 2012034646 A JP2012034646 A JP 2012034646A JP 2012034646 A JP2012034646 A JP 2012034646A JP 2012191189 A5 JP2012191189 A5 JP 2012191189A5
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JP
Japan
Prior art keywords
semiconductor layer
silicon semiconductor
oxide
conductive film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012034646A
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English (en)
Japanese (ja)
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JP2012191189A (ja
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Publication date
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Priority to JP2012034646A priority Critical patent/JP2012191189A/ja
Priority claimed from JP2012034646A external-priority patent/JP2012191189A/ja
Publication of JP2012191189A publication Critical patent/JP2012191189A/ja
Publication of JP2012191189A5 publication Critical patent/JP2012191189A5/ja
Withdrawn legal-status Critical Current

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JP2012034646A 2011-02-21 2012-02-21 光電変換装置 Withdrawn JP2012191189A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012034646A JP2012191189A (ja) 2011-02-21 2012-02-21 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011034576 2011-02-21
JP2011034576 2011-02-21
JP2012034646A JP2012191189A (ja) 2011-02-21 2012-02-21 光電変換装置

Publications (2)

Publication Number Publication Date
JP2012191189A JP2012191189A (ja) 2012-10-04
JP2012191189A5 true JP2012191189A5 (https=) 2015-03-05

Family

ID=46651742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012034646A Withdrawn JP2012191189A (ja) 2011-02-21 2012-02-21 光電変換装置

Country Status (3)

Country Link
US (1) US20120211067A1 (https=)
JP (1) JP2012191189A (https=)
KR (1) KR20120095786A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP6108858B2 (ja) 2012-02-17 2017-04-05 株式会社半導体エネルギー研究所 ｐ型半導体材料および半導体装置
JP2016111279A (ja) * 2014-12-10 2016-06-20 国立大学法人東京農工大学 多接合太陽電池およびその製造方法
JP2017062210A (ja) * 2015-09-25 2017-03-30 株式会社ブイ・テクノロジー 放射線画像撮影装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
JP2704565B2 (ja) * 1990-12-27 1998-01-26 株式会社半導体エネルギー研究所 光電変換装置
JP2004503112A (ja) * 2000-07-06 2004-01-29 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 部分透過性光起電モジュール
US7189917B2 (en) * 2003-03-26 2007-03-13 Canon Kabushiki Kaisha Stacked photovoltaic device
AU2004222793B2 (en) * 2003-10-27 2007-07-26 Mitsubishi Heavy Industries, Ltd. Solar cell and process for producing solar cell
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US20100269896A1 (en) * 2008-09-11 2010-10-28 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
CN102165600B (zh) * 2008-09-26 2013-09-25 株式会社半导体能源研究所 光电转换器件及其制造方法
US8228160B2 (en) * 2008-11-14 2012-07-24 Epcos Ag Sensor element and process for assembling a sensor element
WO2010064549A1 (ja) * 2008-12-04 2010-06-10 三菱電機株式会社 薄膜光電変換装置の製造方法
JPWO2010113708A1 (ja) * 2009-03-30 2012-10-11 三菱マテリアル株式会社 太陽電池モジュールの製造方法

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