JP2012191016A - 光学デバイス - Google Patents
光学デバイス Download PDFInfo
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- JP2012191016A JP2012191016A JP2011053507A JP2011053507A JP2012191016A JP 2012191016 A JP2012191016 A JP 2012191016A JP 2011053507 A JP2011053507 A JP 2011053507A JP 2011053507 A JP2011053507 A JP 2011053507A JP 2012191016 A JP2012191016 A JP 2012191016A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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Abstract
【解決手段】光学デバイス1は、窪み3を有する収納部材2と、この窪み3の底面6の側に第一活性領域5を向ける光学素子4と、窪み3の底面6側に機能性素子14を設置した機能性素子基板15とを備え、光学素子4と機能性素子基板15は窪み3の上端面19から突出しないように収納部材2に収納される。収納部材2は、第一活性領域5に対向する窪み3の底部が透明な第一透明領域7であり、窪み3の内側面8に段差部11が形成され、この段差部11に機能性素子基板15が接合している。段差部11の段差表面には段差電極12が形成され、底面6に形成した第三電極E3や上端面19に形成した第四電極E4と内側面8に形成した側面電極9を介して電気的に接続される。
【選択図】図1
Description
図1及び図2は本発明の第一実施形態に係る光学デバイス1の説明図である。図1は光学デバイス1の縦断面模式図であり、図2は収納部材2を開口側から見た平面模式図であり、図1は図2に示す部分AAの断面に相当する。光学デバイス1は、光学素子4と機能性素子基板15と収納部材2を備えている。光学素子4は、第一面M1に第一活性領域5と第一電極E1を有し、第一面M1の反対側に第二面M2を有している。機能性素子基板15は、第三面M3に機能性素子14と第二電極E2を有し、第三面M3の反対側に第四面M4を有している。収納部材2は、中央に窪み3を有し、その窪み3の底面6の側に第一面M1を向ける光学素子4と、窪み3の開口側に第四面M4を向け、窪み3の上端面19から第四面M4が突出しないようにして機能性素子基板15とを収納している。
図3及び図4は、本発明の第二実施形態に係る光学デバイス1を説明するための図である。図3は光学デバイス1の縦断面模式図であり、図4(a)は収納部材2を開口側から見た平面模式図であり、図4(b)は部分CCの断面から上方を見た状態を表す模式図である。第一実施形態と異なる部分は、内側面8に傾斜路10を形成し、傾斜路10の路面上に側面電極9を形成した点である。同一の部分または同一の機能を有する部分には同一の符号を付している。
図5は、本発明の第三実施形態に係る光学デバイス1の断面模式図である。本実施形態の光学デバイス1は、機能性素子14が光学的な機能を有し、窪み3の底部に形成した第一透明領域7と異なる第二透明領域17を介して光を入射又は射出する。同一の部分又は同一の機能を有する部分には同一の符号を付している。
2 収納部材
3 窪み
4 光学素子
5 第一活性領域
6 底面
7 第一透明領域
8 内側面
9 側面電極
10 傾斜路
11 段差部
12 段差電極
14 機能性素子
15 機能性素子基板
16 第二活性領域
17 第二透明領域
18 土手
19 上端面
20 ワイヤー
Claims (8)
- 光学的に活性な第一活性領域と第一電極を有する第一面と、前記第一面の反対側に第二面を有する光学素子と、
機能性素子と第二電極を有する第三面と、前記第三面の反対側に第四面を有する機能性素子基板と、
中央に窪みを有し、前記窪みの底面の側に前記第一面を向ける前記光学素子と、前記窪みの開口側に前記第四面を向け、前記窪みの開口側の上端面から前記第四面が突出しないように前記機能性素子基板とを収納する収納部材と、を備え、
前記収納部材は、前記第一活性領域に対向する前記窪みの底部が透明な第一透明領域であり、前記窪みの内側面に段差部が設置され、前記底面に前記第一電極と電気的に接続する第三電極と、前記上端面に第四電極と、前記内側面に設置され、前記第三電極と前記第四電極とを電気的に接続する側面電極と、前記段差部の段差表面に設置され、前記第三電極、前記第四電極又は前記側面電極のいずれかに電気的に接続する段差電極とを備え、
前記機能性素子基板は前記段差部に接合し、前記第二電極が前記段差電極と電気的に接続する光学デバイス。 - 前記機能性素子は、前記底面の側に光学的に活性な第二活性領域を備え、
前記収納部材は、前記第二活性領域に対向する前記底部が透明な第二透明領域である請求項1に記載の光学デバイス。 - 前記側面電極の電極面は、前記底面に対して60°を超えない傾斜角を有する請求項1又は2に記載の光学デバイス。
- 前記内側面は、前記底面に対して傾斜する傾斜路を有し、
前記傾斜路の路面上に前記側面電極が形成されている請求項3に記載の光学デバイス。 - 前記傾斜路は、前記底面から前記上端面にかけて葛折り状に形成されている請求項4に記載の光学デバイス。
- 前記側面電極はナノ金属粒子により形成される請求項1〜5のいずれか一項に記載の光学デバイス。
- 前記底面は、前記第一活性領域を囲む土手を有する請求項1〜6のいずれか一項に記載の光学デバイス。
- 前記第一面は、前記土手により囲まれる領域を除いてモールド材によりモールドされている請求項7に記載の光学デバイス。
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JP2011053507A JP5709165B2 (ja) | 2011-03-10 | 2011-03-10 | 光学デバイス |
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JP2011053507A JP5709165B2 (ja) | 2011-03-10 | 2011-03-10 | 光学デバイス |
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JP2012191016A true JP2012191016A (ja) | 2012-10-04 |
JP5709165B2 JP5709165B2 (ja) | 2015-04-30 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017131286A (ja) * | 2016-01-25 | 2017-08-03 | 京セラ株式会社 | 計測センサ用パッケージおよび計測センサ |
WO2018153464A1 (en) * | 2017-02-23 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Sensor element |
JP2019003976A (ja) * | 2017-06-12 | 2019-01-10 | 大日本印刷株式会社 | 貫通電極基板、光学素子、撮像モジュール、撮像装置 |
JP2019003974A (ja) * | 2017-06-12 | 2019-01-10 | 大日本印刷株式会社 | 光学素子、撮像モジュール、撮像装置 |
US10367102B2 (en) | 2017-03-09 | 2019-07-30 | Canon Kabushiki Kaisha | Electronic component and equipment |
Citations (8)
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JPH04116460U (ja) * | 1991-03-29 | 1992-10-19 | 日本電気株式会社 | イメージセンサ |
JPH0660156U (ja) * | 1993-01-25 | 1994-08-19 | 松下電工株式会社 | プリント基板 |
JPH10209413A (ja) * | 1997-01-21 | 1998-08-07 | Toshiba Corp | 固体撮像装置 |
US20040041221A1 (en) * | 2002-08-28 | 2004-03-04 | Boon Suan Jeung | Leadless packaging for image sensor devices and methods of assembly |
JP2007225923A (ja) * | 2006-02-23 | 2007-09-06 | Hamamatsu Photonics Kk | 光送受信デバイス |
US20090014822A1 (en) * | 2007-07-12 | 2009-01-15 | Micron Technology, Inc. | Microelectronic imagers and methods for manufacturing such microelectronic imagers |
US20090224386A1 (en) * | 2008-03-07 | 2009-09-10 | Stats Chippac, Ltd. | Optical Semiconductor Device Having Pre-Molded Leadframe with Window and Method Therefor |
JP2010123606A (ja) * | 2008-11-17 | 2010-06-03 | Seiko Instruments Inc | 貫通電極付基板、発光デバイス及び貫通電極付基板の製造方法 |
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2011
- 2011-03-10 JP JP2011053507A patent/JP5709165B2/ja not_active Expired - Fee Related
Patent Citations (9)
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JPH04116460U (ja) * | 1991-03-29 | 1992-10-19 | 日本電気株式会社 | イメージセンサ |
JPH0660156U (ja) * | 1993-01-25 | 1994-08-19 | 松下電工株式会社 | プリント基板 |
JPH10209413A (ja) * | 1997-01-21 | 1998-08-07 | Toshiba Corp | 固体撮像装置 |
US20040041221A1 (en) * | 2002-08-28 | 2004-03-04 | Boon Suan Jeung | Leadless packaging for image sensor devices and methods of assembly |
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JP2007225923A (ja) * | 2006-02-23 | 2007-09-06 | Hamamatsu Photonics Kk | 光送受信デバイス |
US20090014822A1 (en) * | 2007-07-12 | 2009-01-15 | Micron Technology, Inc. | Microelectronic imagers and methods for manufacturing such microelectronic imagers |
US20090224386A1 (en) * | 2008-03-07 | 2009-09-10 | Stats Chippac, Ltd. | Optical Semiconductor Device Having Pre-Molded Leadframe with Window and Method Therefor |
JP2010123606A (ja) * | 2008-11-17 | 2010-06-03 | Seiko Instruments Inc | 貫通電極付基板、発光デバイス及び貫通電極付基板の製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017131286A (ja) * | 2016-01-25 | 2017-08-03 | 京セラ株式会社 | 計測センサ用パッケージおよび計測センサ |
WO2018153464A1 (en) * | 2017-02-23 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Sensor element |
US10868209B2 (en) | 2017-02-23 | 2020-12-15 | Osram Oled Gmbh | Sensor element |
DE112017007111B4 (de) | 2017-02-23 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Sensorelement |
US10367102B2 (en) | 2017-03-09 | 2019-07-30 | Canon Kabushiki Kaisha | Electronic component and equipment |
JP2019003976A (ja) * | 2017-06-12 | 2019-01-10 | 大日本印刷株式会社 | 貫通電極基板、光学素子、撮像モジュール、撮像装置 |
JP2019003974A (ja) * | 2017-06-12 | 2019-01-10 | 大日本印刷株式会社 | 光学素子、撮像モジュール、撮像装置 |
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