JP2012186187A - Etching method and etching process device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an etching method and an etching process device which obtain a patterning shape which is more uniform and does not have variations due to locations on a substrate.SOLUTION: An etching method includes: a process where a surface layer of a metal film is removed by using an etchant having a temperature t1 in a first stage etching treatment tank 61; and a process where the metal film is patterned by using an etchant having a temperature t2 higher than the temperature t1 in second to fourth stage etching treatment tanks 62 to 64 after the removal process of the surface layer of the metal film.

Description

  The present invention relates generally to an etching method and an etching processing apparatus, and more specifically to an etching method and an etching processing apparatus used when patterning a film formed on a substrate.

  Regarding conventional etching methods, for example, Japanese Patent Application Laid-Open No. 4-337737 discloses that product quality is prevented by leaving water marks and the like during etching, cleaning, and drying processes in a manufacturing process of a thin film transistor matrix substrate and the like. And a method for processing a film-formed substrate for the purpose of improving yield (Patent Document 1).

  In the method for processing a film-formed substrate disclosed in Patent Document 1, an etching process for wet-etching a film using an etching liquid, a rinsing process for cleaning the etching liquid by jetting pure water onto the substrate, and a high pressure A drying step of drying the substrate is sequentially performed by an air knife that blows out air.

JP-A-4-337737

  As disclosed in the above-mentioned patent document, etching is used as a method for patterning a film formed on a substrate. However, the state of the film formed on the substrate may differ partially due to reasons such as local progress of oxidation or nitridation. In this case, if an etchant is supplied to the film and etching is performed, the etching rate varies depending on the location on the substrate, and the patterning shape of the obtained film may vary.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-described problems, and to provide an etching method and an etching processing apparatus that obtain a more uniform patterning shape of a film that does not vary depending on a location on a substrate.

  The etching method according to the present invention is an etching method for patterning a film formed on a substrate. The etching method uses an etchant having a second temperature higher than the first temperature after the step of removing the surface layer of the film using the etchant having the first temperature and the step of removing the surface layer of the film. Patterning.

  According to the etching method configured as described above, assuming that the etching rate of the film varies depending on the location on the substrate, first, the surface layer of the film that may be the cause is removed. At this time, etching is performed at a relatively low processing temperature by using an etchant having a first temperature. Thereby, at a relatively low processing temperature, a difference in reaction rate hardly occurs between a place where the etching rate is high and a place where the etching rate is low, so that the surface layer of the film can be more uniformly removed on the substrate. Thereafter, the film is patterned at a relatively high processing temperature using an etchant having a second temperature. As a result, a more uniform patterning shape of the film can be obtained without variation depending on the location on the substrate.

  Preferably, the step of removing the surface layer of the film includes a step of supplying an etchant having a first temperature to the film for a predetermined period. The step of patterning the film includes a step of supplying an etchant having a second temperature to the film for a predetermined period. According to the etching method configured as described above, the surface layer of the film is removed while the etchant having the first temperature is supplied to the film for a predetermined period, and the etchant having the second temperature is supplied for the predetermined period. The film is patterned while being supplied to the film.

  Preferably, the etching method further includes a step of cleaning the substrate after the step of patterning the film. According to the etching method thus configured, the etching solution remaining on the substrate and the residue of the film are removed after the step of patterning the film.

  Preferably, the substrate is a liquid crystal substrate. The film is a metal film for forming wiring on the liquid crystal substrate. According to the etching method thus configured, a more uniform wiring pattern can be formed on the liquid crystal substrate without variation depending on the location on the substrate.

  Preferably, the step of removing the surface layer of the film includes a step of supplying an etchant having a first temperature to the film in the first etching treatment tank. The etching method further includes a step of moving the substrate from the first etching bath to the second etching bath after the step of removing the surface layer of the film. The step of patterning the film includes a step of supplying an etchant having a second temperature to the film in the second etching treatment tank.

  According to the etching method configured as described above, by separately providing a first etching treatment tank for performing the step of removing the surface layer of the film and a second etching treatment tank for performing the step of patterning the film, A system for supplying etchants having different temperatures can be easily configured.

  An etching processing apparatus according to the present invention is an etching processing apparatus for patterning a film formed on a substrate. An etching apparatus includes a first etching treatment tank that removes a surface layer of a film using an etchant having a first temperature, and an etchant having a second temperature that is higher than the first temperature by transferring a substrate from the first etching treatment tank. A second etching treatment tank for patterning the film using the film, a tank part for collecting the etchant supplied to the film, and adjusting the temperature of the etchant collected in the tank part to the first temperature and supplying the first etching treatment tank to the first etching process tank And a second supply unit that adjusts the temperature of the etchant collected in the tank unit to a second temperature and supplies the etchant to the second etching treatment tank.

  According to the etching processing apparatus configured as described above, a more uniform patterning shape of the film can be obtained without variation depending on the location on the substrate. Further, an etchant circulation system is constructed in which the etchant supplied to the film is collected, and the etchant adjusted to the first temperature and the second temperature is supplied to the first etching treatment tank and the second etching treatment tank, respectively. Thereby, the supply mechanism of the etchant having different temperatures can be simply configured and can be easily and compactly incorporated in the etching processing apparatus.

  Preferably, the second supply unit includes a temperature adjustment unit provided to adjust the temperature of the etchant stored in the tank unit to the second temperature. According to the etching processing apparatus configured as described above, the etchant whose temperature is adjusted to the second temperature in the tank unit is supplied to the second etching processing tank, and from the second temperature to the first temperature by the first supply unit. The temperature-controlled etchant is supplied to the first etching treatment tank.

  As described above, according to the present invention, it is possible to provide an etching method and an etching processing apparatus that obtain a more uniform patterning shape of a film that does not vary depending on the location on the substrate.

It is sectional drawing which shows the 1st process of the etching method in Embodiment 1 of this invention. It is a top view which shows the liquid crystal substrate processed by the etching method shown in FIG. It is sectional drawing which shows the 2nd process of the etching method in Embodiment 1 of this invention. It is sectional drawing which shows the 3rd process of the etching method in Embodiment 1 of this invention. It is a graph which shows the temperature change of the etching liquid supplied at the time of an etching process. It is a graph which shows the 1st modification of the temperature change of the etching liquid shown in FIG. It is a graph which shows the 2nd modification of the temperature change of the etching liquid shown in FIG. It is a graph showing the relationship between the processing temperature of etching, and the reaction rate. It is a figure which shows typically the etching processing apparatus in Embodiment 2 of this invention. It is a figure which shows typically the supply system of the etching liquid provided in the etching processing apparatus in FIG. It is a figure which shows the modification of the etching processing apparatus shown in FIG. 9 and FIG.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings referred to below, the same or corresponding members are denoted by the same reference numerals.

(Embodiment 1)
1 is a cross-sectional view showing a first step of an etching method according to Embodiment 1 of the present invention. FIG. 2 is a plan view showing a liquid crystal substrate processed by the etching method shown in FIG. In this embodiment, the case where the etching method of the present invention is applied to a manufacturing process of a display panel of a liquid crystal display device will be described.

  FIG. 1 representatively shows a substrate cross section in the central region 100 of the liquid crystal substrate 10 and a substrate cross section in the outer edge region 110. As shown in FIG. 2, the center region 100 is a region near the center of the liquid crystal substrate 10, and the outer edge region 110 is a region near the outer edge of the liquid crystal substrate 10.

  In the etching method in the present embodiment, first, a metal film 12 and a resist film 14 are formed on the liquid crystal substrate 10 as a pre-process of the etching process.

  Liquid crystal substrate 10 is made of glass and has a main surface 10 m. A metal film 12 that is patterned by the etching method in the present embodiment is formed on main surface 10m. The metal film 12 is a film for forming a thin film transistor (TFT) wiring (for example, a source wiring or a gate wiring) on the liquid crystal substrate 10 and is made of metal. The metal film 12 is made of, for example, aluminum, titanium, copper, molybdenum, or the like.

  In addition, although the metal film 12 consisting of one layer is shown in the drawing, a metal film consisting of a plurality of layers may be formed on the main surface 10m.

  The liquid crystal substrate 10 has a rectangular shape when the main surface 10m is viewed in plan. As an example, the liquid crystal substrate 10 is a large substrate having a size of 2160 × 2460 mm or 2850 × 3050 mm.

  The resist film 14 is used as a mask film when the metal film 12 is etched. The resist film 14 is formed in a pattern corresponding to the patterning shape of the metal film 12 by a photolithography process performed in advance.

  FIG. 3 is a sectional view showing a second step of the etching method according to Embodiment 1 of the present invention. FIG. 4 is a sectional view showing a third step of the etching method according to Embodiment 1 of the present invention.

  Next, referring to FIG. 3, an etching solution having a temperature t <b> 1 is supplied onto the substrate of the liquid crystal substrate 10. Thus, the surface layer 12a of the metal film 12 exposed from the resist film 14 is removed in each of the central region 100 and the outer edge region 110.

  Referring to FIG. 4, next, an etching solution having a temperature t2 higher than the temperature t1 is supplied onto the substrate of the liquid crystal substrate 10. Thus, the metal film 12 exposed from the resist film 14 is removed in each of the central region 100 and the outer edge region 110, and the metal film 12 is patterned into a predetermined wiring shape.

  FIG. 5 is a graph showing the temperature change of the etchant supplied during the etching process. Referring to FIG. 5, in the etching method according to the present embodiment, an etchant having a constant temperature t1 is supplied onto the substrate of liquid crystal substrate 10 for a predetermined period in the step shown in FIG. Thereafter, in a step shown in FIG. 4, an etching solution having a constant temperature t2 is supplied onto the substrate of the liquid crystal substrate 10 for a predetermined period.

  Note that the steps shown in FIG. 3 and FIG. 4 may be carried out continuously as shown in FIG. 5, or the steps shown in FIG. 3 and the steps shown in FIG. There may be a period during which the etching solution is not supplied.

  The etching solutions used in the etching steps shown in FIGS. 3 and 4 are the same type. As the etching solution, a general one used for etching a metal film is used. For example, a chemical solution such as sulfuric acid, nitric acid, phosphoric acid, or hydrofluoric acid is used.

  The temperature t1 of the etching solution used in the etching process shown in FIG. 3 is appropriately set in consideration of the surface state of the metal film 12, the type of the metal film 12, the type of the etching solution, and the like. The temperature t2 of the etching solution used in the etching process shown in FIG. 4 is set to a value that is optimal when a normal etching process is assumed.

  As a specific example of the temperature of the etching solution, the temperature t1 is 25 ° C. and the temperature t2 is 40 ° C. As an example of the relationship between the temperature t1 and the temperature t2, the temperature t1 is lower than the normal temperature of the etching solution (meaning the temperature that does not heat or cool), and the temperature t2 is higher than the normal temperature of the etching solution. In some cases, the temperature t1 is the room temperature of the etching solution, and the temperature t2 is a temperature higher than the room temperature of the etching solution.

  Thereafter, the cleaning process and the drying process of the liquid crystal substrate 10 are performed to complete the etching process.

  FIG. 6 is a graph showing a first modification of the temperature change of the etching solution shown in FIG. Referring to FIG. 6, in the present modification, an etching solution having a constant temperature t1 is supplied onto the substrate of the liquid crystal substrate 10 for a predetermined period in the step shown in FIG. Subsequently, the etching solution is supplied onto the substrate of the liquid crystal substrate 10 while increasing the temperature from the temperature t1 to the temperature t2. In the process shown in FIG. 4, an etching solution having a constant temperature t2 is supplied onto the substrate of the liquid crystal substrate 10 for a predetermined period. As described above, the temperature of the etching solution to be supplied may be continuously increased between the step shown in FIG. 3 and the step shown in FIG.

  FIG. 7 is a graph showing a second modification of the temperature change of the etching solution shown in FIG. Referring to FIG. 7, in this modification, the etching solution is supplied onto the substrate of liquid crystal substrate 10 for a predetermined period while the temperature is increased from temperature t1 to temperature t1 ′ in the step shown in FIG. Thereafter, in the step shown in FIG. 4, the etching solution is supplied onto the substrate of the liquid crystal substrate 10 for a predetermined period while the temperature is increased from the temperature t2 to the temperature t2 ′. Thus, the temperature of the etching solution supplied in each step in FIGS. 3 and 4 may not be constant.

  Next, functions and effects achieved by the etching method in the present embodiment will be described.

  When the metal film 12 formed on the substrate of the liquid crystal substrate 10 is patterned and wiring is formed on the main surface 10m, the metal film 12 is locally oxidized and nitrided between the previous process and the etching process. Thus, the state of the surface of the metal film 12 may vary depending on the location on the substrate. In the present embodiment, as an example, the oxidation or nitridation of the metal film 12 proceeds in the central region 100, and the outer edge region 110 and the oxide film are formed due to the oxide film or nitride film formed on the surface of the metal film 12. It is assumed that the metal film 12 is difficult to be etched (the etching rate is low) when compared.

  FIG. 8 is a graph showing the relationship between the etching processing temperature and the reaction rate. Referring to FIG. 8, in the drawing, the relationship between the etching processing temperature and the reaction rate in the central region 100 where the etching rate is low is represented by a curve 120, where the etching rate is high. The relationship between the etching processing temperature and the reaction rate in the outer edge region 110 is represented by a curve 130.

  In the etching process, when the processing temperature is low, the difference in the etching reaction rate between the place where the etching rate is high and the place where the etching rate is low is small. The difference in etching reaction rate is large (T1 <T2, S1 <S2).

  In the present embodiment, during the etching step shown in FIG. 3, the oxide film or nitride film formed on the surface of the metal film 12 is removed together with the surface layer 12a. At this time, etching is performed at a relatively low processing temperature by using an etching solution having a temperature t1 lower than the temperature t2. As a result, as described above, when the processing temperature is low, a difference in etching reaction rate is unlikely to occur between a place where the etching rate is high and a place where the etching rate is low, and thus there is a variation between the center region 100 and the outer edge region 110. The surface layer 12a of the metal film 12 can be more uniformly removed without causing it.

  Thereafter, the metal film 12 remaining at a relatively high processing temperature is patterned using an etching solution having a temperature t2. As a result, a more uniform wiring pattern can be formed on the liquid crystal substrate 10 without variation depending on the location on the substrate.

  The steps of the etching method according to the first embodiment of the present invention described above will be described together. The etching method according to the present embodiment uses an etching solution as an etchant having a temperature t1 as a first temperature. After the step of removing the surface layer 12a of the metal film 12 as a film (the step shown in FIG. 3) and the step of removing the surface layer 12a of the metal film 12, the temperature t2 is a second temperature higher than the temperature t1. And a step of patterning the metal film 12 using an etching solution (step shown in FIG. 4).

  According to the etching method of the first embodiment of the present invention configured as described above, a uniform wiring pattern having no variation depending on the location on the substrate can be formed on the liquid crystal substrate 10. In this case, it is possible to prevent the occurrence of luminance unevenness due to the variation in the wiring width and improve the in-plane uniformity of the liquid crystal panel. Further, assuming that the liquid crystal substrate 10 is a large substrate and a plurality of liquid crystal panels are cut out from the single liquid crystal substrate 10, it is possible to prevent variations in display performance between products.

  In the present embodiment, the etching method according to the present invention is applied when forming the wiring film in the manufacturing process of the display panel of the liquid crystal display device. However, the present invention is not limited to this and involves etching of the metal film. Widely applicable to manufacturing processes.

(Embodiment 2)
FIG. 9 schematically shows an etching processing apparatus according to the second embodiment of the present invention. In this embodiment, a specific example of an etching processing apparatus for carrying out the etching method in Embodiment 1 will be described.

  Referring to FIG. 9, etching processing apparatus 500 in the present embodiment is configured to include a receiving unit 50, an etching processing bath 60, a cleaning bath 70, a drying bath 80, and a takeout unit 90. Yes. The receiving part 50, the etching treatment tank 60, the washing tank 70, the drying tank 80, and the take-out part 90 are arranged in the order mentioned, and constitute a production line for carrying out the etching process. Each tank is provided with a transport roller 31 as a transport mechanism. The liquid crystal substrate 10 is sequentially transported from the receiving unit 50 toward the take-out unit 90 while being placed on the transport roller 31.

  The liquid crystal substrate 10 on which the metal film 12 and the resist film 14 are formed is first received by the receiving unit 50 and then received by the manufacturing line for the etching process. Next, the liquid crystal substrate 10 is transferred to the etching treatment tank 60. In the etching treatment tank 60, the metal film 12 is etched into a predetermined wiring pattern by supplying an etching solution to the liquid crystal substrate 10.

  Next, the liquid crystal substrate 10 is transferred to the cleaning tank 70. In the cleaning tank 70, pure water as a cleaning liquid is supplied to the liquid crystal substrate 10, and the etching liquid remaining on the substrate and the residues of the metal film 12 and the resist film 14 are cleaned. Next, the liquid crystal substrate 10 is conveyed to the drying tank 80. In the drying tank 80, the liquid crystal substrate 10 is dried by ejecting air from the air knife 23. Next, the liquid crystal substrate 10 is transported to the takeout unit 90. The liquid crystal substrate 10 that has been subjected to the etching process is unloaded from the manufacturing line of the etching process through the take-out unit 90.

  In this embodiment, the etching tank 60 includes a first-stage etching tank 61, a second-stage etching tank 62, a third-stage etching tank 63, and a fourth-stage etching tank 64. The first-stage etching tank 61, the second-stage etching tank 62, the third-stage etching tank 63, and the fourth-stage etching tank 64 are arranged in the order listed from the upstream side to the downstream side of the etching process production line. It is out. In the first-stage etching tank 61, an etching process for removing the surface layer 12a of the metal film 12 shown in FIG. 3 is performed, and the second-stage etching tank 62, the third-stage etching tank 63, and the fourth-stage etching tank 63. In the etching treatment tank 64, an etching process for patterning the metal film 12 shown in FIG. 4 is performed.

  That is, in the etching process using the etching processing apparatus 500 in the present embodiment, the etching solution having the temperature t1 is supplied onto the substrate of the liquid crystal substrate 10 in the first-stage etching processing tank 61 as the first etching processing tank. . Next, the liquid crystal substrate 10 is sequentially moved from the first-stage etching tank 61 to the second to fourth-stage etching layers 62, 63, and 64 as the second etching tank. Then, an etchant having a temperature t <b> 2 is supplied onto the substrate of the liquid crystal substrate 10 in the second to fourth etching layers 62, 63, 64.

  Each etching tank is provided with an injection nozzle 21 that injects an etching solution toward the liquid crystal substrate 10. The ejection nozzle 21 is provided at a position facing the liquid crystal substrate 10 placed on the transport roller 31. The injection nozzle 21 is provided independently of each other at least between the first stage etching tank 61, the second stage etching tank 62, the third stage etching tank 63, and the fourth stage etching tank 64. ing.

  FIG. 10 is a diagram schematically showing an etching solution supply system provided in the etching processing apparatus in FIG.

  Referring to FIGS. 9 and 10, etching processing apparatus 500 in the present embodiment is configured to further include tank unit 32, etching solution supply unit 47, and etching solution supply unit 44.

  The tank part 32 has a tank shape capable of storing an etching solution. The tank part 32 is connected to the first to fourth stage etching tanks 61, 62, 63, 64 through the recovery pipe 41.

  The etching solution supply unit 47 includes a supply pipe 46 and a cooling unit 45. The supply pipe 46 extends between the tank portion 32 and the first-stage etching processing tank 61 so that the etching solution stored in the tank section 32 can be supplied to the spray nozzle 21 of the first-stage etching processing tank 61. It has been. The cooling unit 45 is provided on the path of the supply pipe 46. The cooling unit 45 includes, for example, a cooling chiller or a buffer tank.

  The etching solution supply unit 44 includes a supply pipe 42 and a heating unit 43. The supply pipe 42 extends between the tank part 32 and the second to fourth stage etching tanks 62, 63, and 64, and etches the etching solution stored in the tank part 32 into the second to fourth stage etching. It is provided so as to be supplied to the spray nozzles 21 of the treatment tanks 62, 63 and 64. In the present embodiment, the heating unit 43 is provided so that the etching solution stored in the tank unit 32 can be heated. The heating unit 43 is composed of, for example, an electric heater. The heating unit 43 may be provided on the path of the supply pipe 42.

  In the etching processing apparatus 500 in the present embodiment, the etching solution supplied to the liquid crystal substrate 10 in each of the first to fourth etching processing tanks 61, 62, 63, 64 flows through the recovery pipe 41. And collected in the tank unit 32. The etching solution stored in the tank unit 32 is heated to a temperature t2 (for example, 40 ° C.) by the heating unit 43 of the etching solution supply unit 44. The etching solution heated to the temperature t <b> 2 flows through the supply pipe 42 of the etching supply unit 44 and is supplied again to the second to fourth stage etching treatment tanks 62, 63 and 64. The etching solution heated to the temperature t2 is cooled to the temperature t1 (for example, 25 ° C.) by the cooling unit 45 of the etching supply unit 47. The etching solution cooled to the temperature t1 flows through the supply pipe 46 and is supplied again to the first-stage etching processing tank 61.

  In this embodiment, the etching solution supply units 44 and 47 are provided to store the etching solution supplied to the first-stage etching processing tank 61 and the second to fourth-stage etching processing tanks 62 and 63. , 64 is shared by a tank section for storing an etching solution supplied to the semiconductor device. For this reason, the system which supplies the etching liquid of different temperature for every etching processing tank can be comprised compactly. Thereby, the etching solution supply system can be easily incorporated into the manufacturing line of the etching processing apparatus 500 (realization of in-line of the etching solution supply system).

  Depending on the relationship between the temperature of the etching solution recovered in the tank 32 and the temperature t1, the heating unit 43 may be provided on the path of the supply pipe 42 and the cooling unit 45 may be omitted. In this case, the etching solution collected in the tank unit 32 is directly supplied to the first-stage etching processing tank 61.

  When the structure of the etching processing apparatus according to the second embodiment of the present invention described above is described together, the etching processing apparatus 500 according to the present embodiment uses the etching solution having the temperature t1 to form the surface layer 12a of the metal film 12. The first-stage etching tank 61 as a first etching tank that removes the liquid crystal substrate 10 is transferred from the first-stage etching tank 61, and the metal film is etched using an etchant having a temperature t2 higher than the temperature t1. 2nd to 4th stage etching tanks 62, 63 and 64 as second etching tanks for patterning 12, a tank part 32 for collecting the etching solution supplied to the metal film 12, and a tank part 32 Etch as a first supply unit for adjusting the temperature of the etched etchant to a temperature t1 and supplying it to the first-stage etching tank 61 Etching solution as a second supply unit that adjusts the temperature of the etching solution collected in the solution supply unit 47 and the tank unit 32 to the temperature t2 and supplies it to the second to fourth-stage etching treatment tanks 62, 63, and 64. And a supply unit 44.

  The etchant supply unit 44 includes a heating unit 43 as a temperature adjustment unit provided so as to adjust the temperature of the etchant stored in the tank unit 32 to the temperature t2.

  FIG. 11 is a diagram showing a modification of the etching processing apparatus shown in FIGS. 9 and 10. Referring to FIG. 11, in the present modification, a single etching processing tank 60 is provided in a subsequent process of the receiving unit 50. A tank portion 36 for storing an etching solution set at a temperature t 1 and a tank portion 37 for storing an etching solution set at a temperature t 2 are connected to the etching processing tank 60 through a supply pipe 39. Has been. On the path of the supply pipe 39, one of the tank part 36 and the etching tank 60 and the tank part 37 and the etching tank 60 are communicated with each other, and the other is blocked. The valve 38 is provided.

  In the etching processing apparatus in this modification, by operating the valve 38, first, an etching solution having a temperature t1 is supplied from the tank unit 36 to the etching processing tank 60, and thereafter, an etching solution having a temperature t2 is etched from the tank unit 37. It supplies to the processing tank 60.

  According to the etching processing apparatus in the second embodiment of the present invention configured as described above, the effects described in the first embodiment can be obtained similarly.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is mainly used in a manufacturing process for forming various metal wirings of a thin film transistor on a liquid crystal substrate.

  10 liquid crystal substrate, 10 m main surface, 12 metal film, 12a surface layer, 14 resist film, 21 spray nozzle, 23 air knife, 31 transport roller, 32, 36, 37 tank part, 38 valve, 39, 42, 46 supply pipe, 41 recovery pipe, 43 heating unit, 44, 47 etching solution supply unit, 45 cooling unit, 50 receiving unit, 60 etching processing tank, 61-64 first to fourth stage etching processing tank, 70 cleaning tank, 80 drying tank, 90 extraction part, 100 center region, 110 outer edge region, 120, 130 curve, 500 etching processing apparatus.

Claims (7)

An etching method for patterning a film formed on a substrate,
Removing the surface layer of the film using an etchant having a first temperature;
And a step of patterning the film using an etchant having a second temperature higher than the first temperature after the step of removing the surface layer of the film. Removing the surface layer of the film includes supplying an etchant having a first temperature to the film for a predetermined period;
The etching method according to claim 1, wherein the step of patterning the film includes a step of supplying an etchant having a second temperature to the film for a predetermined period.   The etching method according to claim 1, further comprising a step of cleaning the substrate after the step of patterning the film. The substrate is a liquid crystal substrate;
The etching method according to claim 1, wherein the film is a metal film for forming a wiring on a liquid crystal substrate. Removing the surface layer of the film includes supplying an etchant having a first temperature to the film in a first etching treatment tank;
After the step of removing the surface layer of the film, further comprising the step of moving the substrate from the first etching treatment tank to a second etching treatment tank,
5. The etching method according to claim 1, wherein the step of patterning the film includes a step of supplying an etchant having a second temperature to the film in the second etching treatment tank. An etching processing apparatus for patterning a film formed on a substrate,
A first etching treatment tank for removing a surface layer of the film using an etchant having a first temperature;
A second etching tank in which the substrate is transported from the first etching tank and the film is patterned using an etchant having a second temperature higher than the first temperature;
A tank unit for collecting the etchant supplied to the membrane;
A first supply unit for adjusting the temperature of the etchant collected in the tank unit to a first temperature and supplying the etchant to the first etching tank;
An etching processing apparatus comprising: a second supply unit that adjusts a temperature of the etchant collected in the tank unit to a second temperature and supplies the etchant to the second etching processing tank.   The etching processing apparatus according to claim 6, wherein the second supply unit includes a temperature adjustment unit provided to adjust the temperature of the etchant stored in the tank unit to a second temperature.

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