JP2009141182A - Substrate treatment method and substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment method that prevents a substrate, such as a glass substrate used for a liquid crystal display panel, from being warped by a great difference in temperature between treatment liquids, such as chemicals and pure water, when the treatment liquids are supplied for treatment. <P>SOLUTION: When chemicals are supplied to a treated surface of a substrate that is transported in a given direction in order to treat the surface, the temperatures of the chemicals supplied to the substrate in respective chemical treatment chambers separated from each other by dividing walls are decreased in a stepwise manner from the upstream side toward the downstream side in the substrate transporting direction. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for supplying a chemical solution to a substrate such as a glass substrate used for a liquid crystal display panel while conveying the substrate.

  In recent years, liquid crystal display panels have been widely used as display units for home appliances such as computers and televisions. In general, a liquid crystal display panel has a configuration in which a pair of glass substrates composed of a thin film transistor (TFT) substrate and a color filter (CF) substrate are arranged in parallel to face each other at a predetermined interval, and liquid crystal is filled between the substrates. I am doing.

  For example, when manufacturing a TFT substrate, the glass substrate surface is sequentially subjected to a plurality of processing steps such as a film forming process on a glass substrate surface, a resist film forming process, an exposure process, a resist developing process, an etching process, and a resist stripping process. A TFT or the like is formed on the substrate.

  In order to form a circuit such as a TFT on the surface of the glass substrate, a method is employed in which a metal film is formed on the surface of the glass substrate by a film forming process, and then this metal film is etched into a predetermined pattern. A resist which is a photosensitive resin is used as a mask in the etching process, and the resist is removed by a peeling process after the etching process.

  For the resist stripping process on the surface of the glass substrate, a stripping processing apparatus that supplies a stripping solution to the front and back surfaces of the glass substrate by a shower method is employed. FIG. 7 is a diagram showing a schematic configuration of the resist stripping apparatus as viewed from above. In this case, the resist stripping apparatus 201 is an apparatus that performs the resist stripping process while the glass substrate 202 is tilted at a predetermined angle, for example, 75 degrees in the vertical direction with respect to the horizontal direction and transported by the transport roller 209.

  As shown in the figure, the resist stripping processing apparatus 201 has a configuration in which a plurality of stripping chambers 230 to 280 are arranged in order, and the glass substrate 202 is placed in the stripping chambers 230 to 280 sequentially one by one from the neutral chamber 220. The resist is stripped by the stripping liquid 204 after being conveyed. The separation chambers 230 to 280 are partitioned by partition walls 231 to 291, and the partition walls 231 to 291 are provided with substrate insertion openings 231 a to 291 a that are opened in a slit shape.

  Further, each of the peeling chambers 230 to 280 is provided with an air jetting unit 212, and high pressure air is jetted from the air jetting unit 212 to remove the stripping liquid 204 and foreign matters adhering to the front and back surfaces of the glass substrate 202. To be done. Usually, the air ejection means 212 is, for example, a substrate insertion port formed in the partition wall 241 so that the stripping liquid 204 and foreign matter used in the stripping chamber 230 are not brought into the adjacent stripping chamber 240 as shown in the figure. It is arrange | positioned before and after 241a.

  The inside of each of the peeling chambers 230 to 280 is forcibly exhausted inside the peeling chambers 230 to 280 by an exhaust unit (not shown). By exhausting the inside of the peeling chamber, an air flow is generated from the inside of the peeling chamber to the outside, and the vapor and mist of the peeling liquid 204 spreading above the glass substrate 204 are exhausted. Since the stripping solution 204 is usually a chemical solution that is toxic to the human body, such exhaust is performed in order to prevent leakage from the stripping chamber.

  In addition, such an exhaust is used, for example, to prevent the vapor or mist of the stripping liquid 204 used in the stripping chamber 230 and foreign matter contained therein from leaking into the adjacent stripping chamber 240 as illustrated. is there. This is because when a large amount of foreign matter is generated in a specific peeling chamber, if the foreign matter enters another peeling chamber, the entire resist peeling apparatus is maintained.

  In general, the higher the temperature of the stripping solution 204 supplied to the glass substrate 202, the shorter the time required for stripping the resist. Therefore, for example, in each of the stripping chambers 230 to 280 as shown in the figure. The temperature of the stripping solution 204 is set to a high temperature of 80 ° C. The stripping liquid 204 supplied to each of the stripping chambers 230 to 280 is supplied from the storage tank 206 through the pump 214 to the glass substrate 202 in a shower shape from the nozzle 207.

  Inside the storage tank 206, a stripping solution heating means 208 for heating the stripping solution 204 is provided. The stripping solution heating means 208 includes a steam pipe 208a, and the steam pipe 20a is immersed in the stripping liquid 204 to raise the temperature of the stripping liquid 204 in the storage tank 206 to 80 ° C. In this case, high-temperature steam flows in the steam pipe 208a.

  Then, the glass substrate 202 having passed through the peeling chambers 230 to 280 is transported to the washing chamber 290, and the front and back surfaces of the glass substrate 202 are washed with pure water 205, and then dried by air or the like in a substrate drying chamber (not shown). Is called. In addition, the following patent document is mentioned as a prior art document relevant to this invention.

JP 2003-270803 A

  However, in the resist stripping apparatus 201 described above, the glass substrate 202 is treated with the stripping solution 204 at 80 ° C. in each of the stripping chambers 230 to 280, and then transferred to the washing chamber 290 to be purified water 205 at 25 ° C. near room temperature. Since the glass substrate 202 is washed with water, the temperature change when the glass substrate 202 enters the washing chamber 290 is large, and the glass substrate 202 is greatly bent on the transport roller 209, and the substrate insertion port 291a and the air jet are blown as shown in the figure. There has been a problem that the glass substrate 202 comes into contact with the means 212 and the surface of the glass substrate 202 is damaged.

  This is because the glass substrate 202 that is expanded by the supply of the stripping solution 204 at 80 ° C. is rapidly cooled by the supply of the pure water 205 at 25 ° C. and contracts to generate a temperature gradient in the glass substrate 202, This is because the glass substrate 202 is bent between the expanded portion and the contracted portion of the glass substrate 202.

  In recent years, as glass substrates used for flat display panels such as liquid crystal display panels have been increased in size (eighth generation: 2160 mm × 2460 mm), the deflection of such glass substrates 202 has increased. It was.

  Further, when processing is performed with the glass substrate 202 in a horizontal state, such bending is suppressed by the weight of the glass substrate 202, but in a clean room where the substrate processing apparatus such as the resist stripping apparatus 201 described above is installed. In order to reduce the installation area of the device, as described above, the glass substrate 202 is inclined at 75 degrees in the vertical direction with respect to the horizontal direction, so that the size of the device is reduced. When the glass substrate 202 is processed in a substantially vertical state, such bending cannot be suppressed even by its own weight.

  As a countermeasure for this problem, it is conceivable to increase the area of the substrate insertion port 291a so that the glass substrate 202 does not come into contact with the substrate insertion port 291a even if the glass substrate 202 is bent. Vapor and mist of the stripping liquid 204 inside 280 and foreign substances contained therein leak into the adjacent flush chamber 290.

  In order to suppress such leakage, the amount of exhaust from the inside of the separation chamber 280 is increased, and the amount of water vapor and mist of the separation liquid 204 taken out to the outside of the separation chamber 280 is increased by exhaust. Since the problem of increasing the consumption of the stripping liquid 204 occurs, it is not a good idea to increase the area of the substrate insertion opening 291a.

  Therefore, the problem to be solved by the present invention is that there is a large temperature difference between processing solutions when processing a substrate such as a glass substrate used in a liquid crystal display panel by supplying a processing solution such as a chemical solution or pure water. It is to provide a substrate processing method and a substrate processing apparatus in which the substrate is prevented from being bent by the above.

  In order to solve the above-described problems, the substrate processing method according to the present invention provides each chemical processing in a plurality of chemical processing chambers partitioned by a partition when supplying a chemical to a processing surface of a substrate transported in a certain direction to perform chemical processing. The gist is that the temperature of each chemical solution supplied to the substrate in the chamber is lowered stepwise from the upstream side to the downstream side in the transport direction of the substrate.

  In this case, the substrate may be transported with the processing surface inclined at an angle. Further, the substrate may be configured to be washed with water after chemical treatment. Furthermore, the chemical solution may be a stripping solution that strips the resist formed on the processing surface of the substrate.

  In order to solve the above-described problems, a substrate processing apparatus according to the present invention is a substrate processing apparatus that supplies a chemical solution to a processing surface of a substrate that is conveyed in a certain method and performs a chemical treatment, and a plurality of substrates to which the substrate is conveyed. The chemical solution processing chambers are arranged side by side in order, and the temperature of each chemical solution supplied to the substrate in each chemical solution processing chamber is set to a different temperature by a plurality of chemical solution heating and supplying means, and is supplied to the substrate in each chemical solution processing chamber The gist of the invention is that the temperature of each chemical solution is lowered stepwise from the upstream side to the downstream side in the substrate transport direction.

  In this case, a transport roller for supporting and transporting the substrate at a predetermined angle and a lower end support roller for supporting the lower end of the substrate transported by the transport roller are disposed in each chemical processing chamber, and the substrate is processed. It is preferable that the surface is inclined and transported. Moreover, it is good to set it as the structure provided with the water washing process chamber in which the said board | substrate is washed with water after the said chemical | medical solution process.

  Further, a cooling means is provided in the middle of a chemical liquid supply pipe disposed from the plurality of chemical liquid heating supply means to the chemical liquid processing chamber, and the temperature of the chemical liquid passing through the chemical liquid supply pipe is reduced by the cooling means. The temperature may be lower than the temperature of the chemical solution set by the heating supply means. In addition, each chemical solution processing chamber is partitioned by a partition, and air jetting means for removing the chemical on the substrate processing surface by air is provided before and after the substrate insertion opening formed in each partition in a slit shape. It is good to make it. And the said chemical | medical solution is good to set it as the structure which is a peeling liquid which peels the resist formed in the process surface of the said board | substrate.

  According to the present invention having the above-described configuration, when a chemical solution is supplied to a processing surface of a substrate transported in a certain direction to perform a chemical treatment, the substrate is formed in each chemical treatment chamber of a plurality of chemical treatment chambers partitioned by a partition wall. Since the temperature of each chemical solution to be supplied is lowered stepwise from the upstream side to the downstream side in the transport direction of the substrate, for example, when the substrate is washed with water after the chemical solution treatment, it is used for the chemical solution and water washing. The temperature difference of the pure water to be produced can be reduced, and the bending of the substrate due to the temperature difference between the chemical solution and the pure water can be suppressed. Thus, the substrate is prevented from being damaged by coming into contact with a member disposed in the vicinity of the substrate such as a substrate insertion port or an air blowing means provided in the chemical processing chamber.

  In this case, the temperature of each chemical solution supplied to the substrate in each chemical solution processing chamber is set to a different temperature by a plurality of chemical solution heating and supplying means, and is disposed from the plurality of chemical solution heating and supplying means to the chemical solution processing chamber. A cooling means is provided in the middle of the chemical solution supply pipe, and the temperature of the chemical liquid passing through the chemical supply pipe is lowered by this cooling means from the temperature of the chemical liquid set by the chemical heating supply means. By doing so, the temperature of the chemical liquid supplied from one chemical liquid heating and supplying means can be set to a plurality of different temperatures, and the number of chemical liquid heating and supplying means required for setting the temperature of the chemical liquid can be reduced.

  Hereinafter, an embodiment of a substrate processing method and a substrate processing apparatus according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of the resist stripping apparatus according to the first embodiment of the present invention as viewed from above. FIG. 2 is a schematic configuration of the stripping chamber provided in the resist stripping apparatus of FIG. FIG. 3 is a diagram showing a schematic configuration of the substrate transfer means of FIG. 2, FIG. 4 (a) is a diagram showing a schematic configuration of the shower type nozzle of FIG. 2, and FIG. 4 (b) is a diagram of FIG. It is the figure which showed schematic structure of the air ejection means.

  The resist stripping apparatus 1 shown in FIG. 1 is an apparatus that performs resist stripping processing while the glass substrate 2 is tilted at a predetermined angle, in this case, 75 degrees in the vertical direction with respect to the horizontal direction and transported by the transport roller 9. is there.

  As shown in the figure, the resist stripping processing apparatus 1 has a configuration in which a plurality of stripping chambers 30 to 80 are arranged in order, and the glass substrate 2 is placed in the stripping chambers 30 to 80 one by one from the neutral chamber 20 one by one. After being transported and subjected to a resist stripping process with the stripping solution 4 and subjected to the resist stripping process, it is transported to the water washing chamber 90 and subjected to a water washing process with pure water 5. In this case, the glass substrate 2 is conveyed from the neutral chamber 20 disposed on the upstream side of the resist stripping apparatus 1 toward the water washing chamber 90 disposed on the downstream side.

  Substrate insertion holes 21 a and 31 a that are opened in a slit shape are formed in the partition walls 21 and 31 provided on the upstream side and the downstream side of the neutral chamber 20, respectively. The board insertion holes 21a and 31a are provided with shutters 3 and 3, and the board insertion holes 21a and 31a can be closed by the shutters 3 and 3, respectively.

  In the first peeling chamber 30, the peeling liquid 4 is supplied from the storage tank 6 through the nozzle 7 to the front and back surfaces of the glass substrate 2. The temperature of the stripping solution 4 is raised to 80 ° C. by the stripping solution heating means 8 in the storage tank 6. The stripping solution heating means 8 includes a steam pipe 8a, and the steam pipe 8a is immersed in the stripping liquid 4 to raise the temperature of the stripping liquid 4 in the storage tank 6 to 80 ° C. In this case, high-temperature steam flows in the steam pipe 8a.

  Since the first peeling chamber 30 and peeling chambers 40 to 80 described later have substantially the same internal configuration, the first peeling chamber 30 will be described with reference to FIGS.

  As shown in FIGS. 2 and 3, the glass substrate 2 is conveyed at an angle of a predetermined angle of 75 degrees in the first peeling chamber 30. As the conveying means, a plurality of conveying rollers 9 and a plurality of lower end support rollers 10 are provided. Moreover, the nozzle 7 which supplies the peeling liquid 4 with respect to the surface and back surface of the glass substrate 2 conveyed to the space inside the 1st peeling chamber 30, and the peeling liquid 4 adhering to the surface and back surface of the glass substrate 2 are removed. Air jetting means 12 is provided.

  The transport roller 9 provided on the transport shaft 9a is disposed on the back side, which is the lower side in the tilt direction of the glass substrate 2, and its axis is parallel to the glass substrate 2 to be transported, that is, inclined at an angle of 75 degrees. ing. A plurality of transport shafts 9a are provided at predetermined intervals along the transport direction. The upper end portion of the transport shaft 9a is rotatably supported by the bearing 9b and the lower end portion is rotatably supported by the bearing 9c.

  The lower end of the glass substrate 2 is supported by a lower end support roller 10 provided on the drive shaft 10a. A motor 11 is connected to the drive shaft 10a via a gear 10b and a gear 11a. Then, the lower end support roller 10 is rotationally driven by the motor 11 so that a driving force is applied to the glass substrate 2 by a frictional force generated between the lower end support roller 10 and the lower end of the glass substrate 2, and the glass substrate 2 is conveyed. It is conveyed along the roller 9.

  As shown in FIG. 2 and FIG. 4A, the nozzle 7 is arranged so as to be orthogonal to the transport direction of the glass substrate 2, and supplies the stripping solution 4 to the front and back surfaces of the glass substrate 2 in a shower shape. . A plurality of nozzles 7 are provided at predetermined intervals along the transport direction. The stripping solution supply port 7 a of the nozzle 7 is connected to the storage tank 6 by a stripping solution supply pipe 13 as shown in FIG. 1, and the stripping solution 4 is sent to the nozzle 7 by the pump 14. The stripping solution 4 is ejected in a shower form from the stripping solution spout 7 b at the tip of the nozzle 7.

  Although not shown, a filter for filtering the stripping liquid 4 passing through the stripping liquid supply pipe 13 and the flow rate of the stripping liquid 4 are adjusted in the middle of the stripping liquid supply pipe 13 between the pump 14 and the nozzle 7. A flow rate adjusting valve or the like is provided.

  The bottom 32 of the first peeling chamber 30 is connected to the storage tank 6 through the drain pipe 15 as shown in FIG. The stripping solution 4 collected by the bottom 32 is once stored in the storage tank 6 and then sent again to the nozzle 7 by the pump 14.

  As shown in FIG. 2 and FIG. 4B, the air ejection means 12 is disposed so as to be orthogonal to the conveyance direction of the glass substrate 2. The air ejection means 12 has an air storage chamber 12b that temporarily retains the air supplied from the air supply port 12a therein, communicates with the air storage chamber 12b, and emits air linearly with respect to the glass substrate 2. A slit-like air outlet 12c for jetting is formed. An air pump (not shown) is connected to the air supply port 12a of the air ejection means 12, and compressed air is supplied.

  Such an air ejection means 12 is disposed in the vicinity of the substrate insertion ports 31a and 41a formed in the respective partition walls 31 and 41 on the upstream side and the downstream side of the first peeling chamber 30, and ejects high-pressure air. Then, the stripping solution 4 and foreign matter adhering to the front and back surfaces of the glass substrate 2 are removed. As shown in FIG. 1, the air ejection means 12 is provided in front of and behind the substrate insertion opening 41 a so that the stripping solution 4 and foreign matter used in the first stripping chamber 30 are not brought into the adjacent second stripping chamber 40. Is arranged.

  As shown in FIG. 2, an exhaust port 33 is provided above the first separation chamber 30, and exhaust inside the first separation chamber 30 is forced by an unillustrated exhaust means connected to the exhaust port 33. Has been done. By exhausting the inside of the first peeling chamber 30, an air flow is generated from the inside of the first peeling chamber 30 toward the outside, and the vapor or mist of the peeling liquid 4 spreading above the glass substrate 2 is exhausted. As a result, the vapor or mist of the stripping solution 4 used in the first stripping chamber 30 and the foreign matters contained therein do not leak into the adjacent second stripping chamber 40, the neutral chamber 20, or the like.

  Next, the peeling chambers 40 to 80 and the washing chamber 90 will be described. As shown in FIG. 1, the second peeling chamber 40 and the third peeling chamber 50 are separated by a partition wall 51, but the peeling liquid 4 supplied from the storage tank 6 is configured to be used in both the peeling chambers 40 and 80. It has become. Accordingly, the air ejection means 12 for removing the peeling liquid 4 and foreign matters adhering to the front and back surfaces of the glass substrate 2 is provided in the vicinity of the substrate insertion opening 41a formed in the partition wall 41 on the upstream side of the second peeling chamber 40, and 3 provided in the vicinity of the substrate insertion opening 61 a formed in the partition wall 61 on the downstream side of the peeling chamber 50.

  The stripping solution 4 supplied to the second stripping chamber 40 and the third stripping chamber 50 is heated to 70 ° C. by the stripping solution heating means 8 in the storage tank 6. The stripping solution 4 heated to 70 ° C. by the stripping solution heating means 8 is supplied to the front and back surfaces of the glass substrate 2 from the nozzles 7 and 7 by the pumps 14 and 14 through the stripping solution supply pipes 13 and 13, respectively. .

  The stripping solution 4 collected at the bottoms 42 and 52 of the second stripping chamber 40 and the third stripping chamber 50 is once stored in the storage tank 6 through the drain pipes 15 and 15, The liquid is again sent to the nozzles 7 and 7 by 14 and supplied to the front and back surfaces of the glass substrate 2.

  The fourth stripping chamber 60 and the fifth stripping chamber 70 are similarly partitioned by a partition wall 71, but the stripping solution 4 supplied from the storage tank 6 is configured to be used in both stripping chambers 60 and 70. Therefore, the air blowing means 12 for removing the peeling liquid 4 and foreign matters adhering to the front and back surfaces of the glass substrate 2 is provided in the vicinity of the substrate insertion opening 61a formed in the partition wall 61 on the upstream side of the fourth peeling chamber 60, and 5 is provided in the vicinity of the substrate insertion opening 81a formed in the partition wall 81 on the downstream side of the peeling chamber 70.

  The stripping solution 4 supplied to the fourth stripping chamber 60 and the fifth stripping chamber 70 is heated to 50 ° C. by the stripping solution heating means 8 in the storage tank 6. The stripping solution 4 heated to 50 ° C. by the stripping solution heating means 8 is supplied from the nozzles 7 and 7 to the front and back surfaces of the glass substrate 2 by the pumps 14 and 14 through the stripping solution supply pipes 13 and 13, respectively. .

  Further, the stripping solution 4 collected at the bottoms 62 and 72 of the fourth stripping chamber 60 and the fifth stripping chamber 70 is temporarily stored in the storage tank 6 through the drain pipe 15, and then re-nozzled by the pumps 14 and 14. 7 and 7 and supplied to the front and back surfaces of the glass substrate 2.

  The sixth peeling chamber 80 is partitioned into a front chamber 80a and a rear chamber 80b by a partition wall 83 provided in the center. In this case, the air blowing means 12 for removing the peeling liquid 4 and foreign matter adhering to the front and back surfaces of the glass substrate 2 is in the vicinity of the substrate insertion port 81a formed in the partition wall 81 on the upstream side of the sixth peeling chamber 80, It is provided in the vicinity of the substrate insertion port 91a formed in the partition wall 91 on the downstream side.

  The stripping solution 4 supplied to the sixth stripping chamber 80 is heated to 40 ° C. by the stripping solution heating means 8 in the storage tank 6. The release liquid 4 heated to 40 ° C. by the release liquid heating means 8 is supplied from the nozzles 7 and 7 by the pump 14 via the release liquid supply pipe 13 and the release liquid supply pipe 13 branched from the release liquid supply pipe 13. It is supplied to the front and back surfaces of the glass substrate 2.

  The stripping solution 4 collected at the bottom 82 of the sixth stripping chamber 80 is temporarily stored in the storage tank 6 via the drainage pipes 15 and 15 and then sent again to the nozzles 7 and 7 by the pump 14. It is supplied to the front and back surfaces of the glass substrate 2.

  Thus, the glass substrate 2 is treated with the stripping solution 4 at 80 ° C. in the first stripping chamber 30, and then treated with the stripping solution 4 at 70 ° C. in the second stripping chamber 40 and the third stripping chamber 50. Next, the fourth stripping chamber 60 and the fifth stripping chamber 70 are treated with the stripping solution 4 at 50 ° C., and finally, the sixth stripping chamber 80 is treated with the stripping solution 4 at 40 ° C.

  Then, the glass substrate 2 treated with the stripping solution 4 at 40 ° C. in the sixth stripping chamber 80 is transported to the washing chamber 90, and its front and back surfaces are washed with pure water 5 at 25 ° C. close to room temperature. The pure water 5 is supplied from the nozzle 19 to the front and back surfaces of the glass substrate 2 through the pure water supply pipe 18. The pure water supply pipe 18 is connected to a pure water supply means (not shown).

  At this time, the glass substrate 2 is treated with the stripping solution 4 at 40 ° C. in the sixth stripping chamber 80, then transferred to the washing chamber 80 and washed with pure water at 25 ° C. close to room temperature. The temperature change at the time of entering the washing chamber 90 is small, and the glass substrate 2 is not greatly bent on the transport roller 9. As a result, the glass substrate 2 comes into contact with the substrate insertion port 91a formed in the partition wall 91 and the air ejection means 12 disposed in the vicinity of the substrate insertion port 91a, and the surface of the glass substrate 2 is damaged. The problem disappears.

  As described above, since the expansion of the glass substrate 2 is reduced by gradually decreasing the temperature of the stripping solution 4 supplied to the glass substrate 2 to 80 ° C., 70 ° C., 50 ° C., and 40 ° C., 25 The glass substrate 2 is not rapidly cooled by the supply of the pure water 5 at 0 ° C. Thereby, since the temperature gradient of the glass substrate 2 at the time of being conveyed to the washing chamber 90 is relieve | moderated, it will be suppressed that the glass substrate 2 bends greatly.

  This is particularly effective when it is not possible to suppress the bending of the glass substrate 2 in the horizontal state due to its own weight, such as when the glass substrate 2 is processed in a substantially vertical state as in the resist stripping apparatus 1 described above. In addition, the configuration such as the resist stripping apparatus 1 described above can obtain such an effect only by changing the temperature setting of the stripping solution stored in the storage tank of the currently used resist stripping apparatus. Since it is a structure, it is easy to implement with little cost increase.

  Next, a resist stripping apparatus according to the second embodiment of the present invention will be described with reference to FIG. In addition, about the same structure as the resist peeling apparatus 1 demonstrated in 1st Embodiment mentioned above, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different point.

  As shown in the drawing, of the two stripping solution supply pipes 13 and 13 for supplying the stripping solution 4 to the second stripping chamber 40 and the third stripping chamber 50 provided in the resist stripping apparatus 101, the stripping is performed in the third stripping chamber 50. By providing the cooling means 17 in the middle of the stripping solution supply pipe 13 that supplies the liquid 4, the temperature of the stripping solution 4 supplied to the third stripping chamber 50 is set to the stripping solution 4 supplied to the second stripping chamber 40. The temperature is set to 60 ° C., which is 10 ° C. lower than 70 ° C.

  As shown in FIG. 6, the cooling means 17 includes a cooling water pipe 17 a, and the cooling water pipe 17 a is wound around a peeling liquid supply pipe 13 that supplies the peeling liquid 4 to the third peeling chamber 50. The temperature of the stripping solution 4 passing through the stripping solution supply pipe 13 is lowered. In this case, for example, 7 ° C. cold water flows in the cooling water pipe 7a.

  Further, as shown in the drawing, the fifth stripping chamber 70 out of the two stripping solution supply pipes 13 and 13 for supplying the stripping solution 4 to the fourth stripping chamber 60 and the fifth stripping chamber 70 provided in the resist stripping apparatus 101, respectively. By providing the cooling means 17 in the middle of the stripping solution supply pipe 13 that supplies the stripping solution 4 to the stripping strip 4 supplied to the fourth stripping chamber 60, the temperature of the stripping solution 4 supplied to the fifth stripping chamber 70 is set. The temperature of liquid 4 is set to 40 ° C., which is 10 ° C. lower than 50 ° C.

  Further, as shown in the drawing, the sixth stripping liquid supply pipes 13 and 13 for feeding the stripping solution 4 to the front chamber 80a and the rear chamber 80b of the sixth stripping chamber 80 provided in the resist stripping apparatus 101, respectively. By providing the cooling means 17 in the middle of the stripping solution supply pipe 13 that supplies the stripping solution 4 to the back chamber 80b of the chamber 80, the temperature of the stripping solution 4 supplied to the back chamber 80b of the sixth stripping chamber 80 is The temperature of the stripping solution 4 supplied to the front chamber 80a of the sixth stripping chamber 80 is set to 30 ° C., which is 10 ° C. lower than 40 ° C.

  And the glass substrate 2 processed with the 30 degreeC peeling liquid 4 in the back chamber 80b of the 6th peeling chamber 80 is conveyed to the washing room 90, and the surface and the back surface are 25 degreeC pure water 5 near room temperature. Washed with water. At this time, the glass substrate 2 is treated in the rear chamber 80b of the sixth stripping chamber 80 with the stripping solution 4 at 30 ° C. and then transferred to the washing chamber 90 and washed with pure water at 25 ° C. close to room temperature. The temperature change when the glass substrate 2 enters the rinsing chamber 90 is smaller than in the case of the first embodiment described above, and the glass substrate 2 is further prevented from being greatly bent on the transport roller 9. .

  Thus, the temperature of the stripping solution 4 supplied to the glass substrate 2 such as 80 ° C., 70 ° C., 60 ° C., 50 ° C., 40 ° C., and 30 ° C. is finer and stepwise than in the case of the first embodiment described above. Since the expansion of the glass substrate 2 is further reduced by lowering to 25 ° C., the glass substrate 2 is not rapidly cooled by the supply of pure water 5 at 25 ° C. Thereby, since the temperature gradient of the glass substrate 2 at the time of being conveyed to the washing chamber 90 is further relieved, it will be suppressed that the glass substrate 2 bends greatly.

  Further, the configuration such as the resist stripping apparatus 101 described above has a storage tank 6 and stripping solution heating unit that raise the stripping solution 4 to a predetermined temperature only by providing the cooling unit 17 at a midway position in the stripping solution supply pipe 13. The number 8 can be used as it is, and the temperature of the stripping solution 4 can be set to a plurality of temperatures, and can be implemented simply by adding the cooling means 17 to the currently used resist stripping apparatus.

  As mentioned above, although one Embodiment of this invention was described, this invention is not limited to such Embodiment at all, Of course, in the range which does not deviate from the summary of this invention, it can implement in a various aspect. For example, in the above-described embodiment, the case where the present invention is applied to the resist stripping apparatus has been described. However, the present invention can be applied to any substrate processing apparatus that supplies and processes a high-temperature chemical solution to a substrate. Further, the configuration and the number of separation chambers and washing chambers as chemical processing chambers are not limited to the above-described embodiment. Furthermore, the temperature setting of the stripping solution as the chemical solution is not limited to the above-described embodiment.

It is the figure which showed schematic structure which looked at the resist peeling apparatus which concerns on the 1st Embodiment of this invention from upper direction. It is the figure which showed schematic structure which looked at the peeling chamber with which the resist peeling apparatus of FIG. 1 is provided from the side. It is the figure which showed schematic structure of the board | substrate conveyance means of FIG. (A) is the figure which showed schematic structure of the shower type nozzle of FIG. 2, (b) is the figure which showed schematic structure of the air ejection means of FIG. It is the figure which showed schematic structure which looked at the resist peeling apparatus which concerns on the 2nd Embodiment of this invention from upper direction. It is the figure which showed schematic structure of the cooling means of FIG. It is the figure which showed schematic structure which looked at the resist peeling apparatus used conventionally from the upper direction.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Resist peeling apparatus 4 Stripping liquid 5 Pure water 6 Storage tank 7 Nozzle 8 Stripping liquid heating means 9 Conveying roller 12 Air ejection means 13 Stripping liquid supply pipe 14 Pump 15 Drain pipe 17 Cooling means 17a Cooling water pipes 20 to 80 Stripping chambers 21 to 21 81 Bulkhead 21a-81a Substrate insertion port 90 Flush room

Claims (10)

  When supplying a chemical solution to the processing surface of the substrate transported in a certain direction and processing the chemical solution, the temperature of each chemical solution supplied to the substrate in each chemical solution processing chamber of a plurality of chemical solution processing chambers partitioned by a partition wall The substrate processing method is characterized in that it is lowered stepwise from the upstream side to the downstream side in the transport direction.   The substrate processing method according to claim 1, wherein the substrate is transported with a processing surface inclined at an angle.   The substrate processing method according to claim 1, wherein the substrate is subjected to a water washing treatment after a chemical solution treatment.   The substrate processing method according to claim 1, wherein the chemical solution is a stripping solution that strips a resist formed on a processing surface of the substrate.   A substrate processing apparatus for supplying a chemical to a processing surface of a substrate transported in a certain method and performing a chemical processing, wherein a plurality of chemical processing chambers to which the substrate is transported are arranged side by side in each chemical processing chamber. The temperature of each chemical solution supplied to the substrate is set to a different temperature by a plurality of chemical solution heating and supplying means, and the temperature of each chemical solution supplied to the substrate in each chemical solution processing chamber is downstream from the upstream side in the substrate transport direction. The substrate processing apparatus is lowered stepwise toward the side.   A transport roller for supporting and transporting the substrate at a predetermined angle and a lower end support roller for supporting a lower end of the substrate transported by the transport roller are disposed in each chemical processing chamber, and the substrate has a slanted processing surface. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is inclined and conveyed.   The substrate processing apparatus according to claim 5, further comprising a water washing treatment chamber in which the substrate is washed with water after the chemical treatment.   Cooling means is provided in the middle of a chemical liquid supply pipe disposed in the chemical liquid processing chamber from the plurality of chemical liquid heating supply means, and the temperature of the chemical liquid passing through the chemical liquid supply pipe is reduced by the cooling means. The substrate processing apparatus according to claim 5, wherein the temperature is lower than a temperature of the chemical solution set by the means.   Each chemical solution processing chamber is partitioned by a partition, and air jetting means for removing the chemical on the substrate processing surface by air is provided before and after the substrate insertion opening formed in each partition in a slit shape. The substrate processing apparatus according to claim 5.   The substrate processing apparatus according to claim 5, wherein the chemical solution is a stripping solution that strips a resist formed on a processing surface of the substrate.

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