JP2012178509A - Multilayer film coil and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer film coil in which there is no through-hole and a bulk-shaped magnetic core is available, without using a photolithography step.SOLUTION: A multilayer film coil is formed in a helical shape by alternately layering a pattern of a conductive film and a pattern of an insulating film on a substrate and connecting the patterns of the conductive films with each other. When a circumferential length for one round around an axis of the helical shape is defined as P, the pattern of the conductive film and the pattern of the insulating film have determined circumferential lengths Lc and Li shorter than P. The pattern of the conductive film or the insulating film is formed right above the substrate. Regarding the same direction around the axis of the helical shape, an end point starting the pattern of the insulating film is matched to a position advanced from an end point starting the pattern of the conductive film right below the end point starting the pattern of the insulating film by a circumferential length P-Li, the end point starting the pattern of the conductive film is matched to a position advanced from the end point starting the pattern of the insulating film right below the end point starting the pattern of the conductive film by a circumferential length P-Lc, and the patterns are layered, respectively.

Description

  The present invention relates to a multilayer coil having a helical shape formed by laminating thin films (a spiral that repeats the same pattern for projection onto a plane perpendicular to an axis) and a method for manufacturing the same.

  As a prior art of a multilayer film coil having a helical shape, for example, a small chip coil disclosed in Patent Document 1 is known. FIG. 17 shows a perspective view of the chip coil. Conductive thin films 2e, 2f, and 2g are stacked on the first, second, and third layers, and a helical coil is formed between the coil terminal 5a and the pad terminal 5b that is connected by wire bonding or the like. .

  FIG. 18 is a cross-sectional view of the chip coil shown in FIG. 18A is a cross-sectional view taken along the line AA, and FIG. 18B is a cross-sectional view taken along the line BB. Reference numeral 1 denotes a coil substrate, in which a lower insulating layer 3a is laminated on a first conductive thin film 2e, a second conductive thin film 2f is laminated thereon, and an upper insulating layer 3b is laminated thereon. A third layer of conductive thin film 2g is laminated thereon. And the protective film 7 is formed in the uppermost layer so that the whole chip-shaped coil may be covered. The first conductive thin film 2e and the second conductive thin film 2f are connected by a through hole 4a, and the second and third layers are connected by a through hole 4b. Reference numerals 9a, 9b, and 9c denote film-shaped magnetic cores, and a lower insulating layer 3a and an upper insulating layer 3b are interposed between the respective film-shaped magnetic cores.

Japanese Patent Laid-Open No. 10-233315

  A conventional chip coil requires a through hole provided in an insulating layer to connect between conductive thin films. Therefore, the coil requires an extra thickness of the insulating layer for the through hole, and increasing the number of turns of the coil increases the thickness of the entire coil. Further, the magnetic core provided on the central axis of the coil is a film-shaped magnetic core separated by an insulating layer, and there is a problem that it is difficult to provide a bulky magnetic core having a strong action. In addition, the production of the chip-shaped coil has a problem of high cost because it uses a photolithography technique (hereinafter also referred to as a photolithography process) that requires a certain amount of equipment and man-hours.

  The present invention has been made in view of such problems, and it is intended to provide a multilayer film coil that does not require the use of a through hole, can use a bulk magnetic core, and does not require a photolithography process, and a method for manufacturing the same. Objective.

  The multilayer coil according to the present invention has a helical shape in which conductive film patterns and insulating film patterns are alternately stacked on a substrate, and the conductive film patterns are connected to each other. When the circumferential length of one circumference around the helical axis is P, the conductive film pattern and the insulating film pattern have lengths Lc and Li along the circumference which are shorter than the circumferential length P. And, except for the lowermost layer on the substrate, for the same orientation around the axis of the helical shape, the starting end point of the insulating film pattern is longer in the circumference than the starting end point of the conductive film pattern immediately below it The start point of the conductive film pattern is aligned with the position advanced by P-Li, and the start end point of the conductive film pattern is aligned with the position advanced by the length P-Lc along the circumference from the start point of the insulating film pattern immediately below it. Laminated and Li + Lc> P.

  According to the present invention, “the end point of the insulating film pattern has advanced by a length P-Li along the circumference from the starting end point of the pattern of the conductive film immediately below it in the same direction around the axis. The total length of the insulating film pattern and the conductive film pattern immediately below it is equal to the circumferential length P due to the requirement of “aligned to the position”. It is configured to end just by hitting the starting end point of the film pattern. Similarly, according to the requirement that “the end point of the conductive film pattern is aligned at a position advanced by a length P-Lc along the circumference from the start end point of the insulating film pattern immediately below the conductive film pattern” Since the combined length of the pattern of the insulating film immediately below is equal to the circumferential length P, the end point of the end of the pattern of the conductive film always ends by directly abutting the end point of the pattern of the insulating film immediately below. Become.

  By being configured in this way, the multilayer coil of the present invention does not form useless overlapping portions or gaps between patterns, and therefore there is no unnecessary unevenness, and the film pattern is closely packed and optimally compact And smooth alternating lamination becomes possible. Then, depending on the requirement that Lc and Li are shorter than P and Li + Lc> P, formation of an exposed portion that is not covered with the pattern of the insulating film immediately above the pattern of the conductive film, and the next in the exposed portion Connection with the pattern of the conductive film is secured, and a coil is formed. That is, the conductive films sandwiching the insulating film directly overlap each other without the insulating film being sandwiched by the length of P-Li> 0. Since conduction between the conductive films can be obtained at the overlapping portion, a through hole is not required unlike the prior art. In addition, since the structure of the conductive film and the pattern of the insulating film, each having a predetermined shape, are alternately laminated, the mechanical mask is used without using the photolithography process, and at most two or only one mechanical mask depending on the form of the coil. By using this, it is possible to form a coil by alternately laminating conductive films and insulating films by a simple film forming process.

The perspective view which shows an example of the structure of the multilayer film coil 200 of this invention. The figure which shows an example of the top view and side view of the conductive film-forming mask 20 and the insulating film-forming mask 25. The figure which shows the schematic of the vapor deposition apparatus which forms a thin film. The figure which shows the schematic of the vapor deposition apparatus which forms a thin film using a rotation mechanical mask. The figure which shows the rotation mechanical mask 45 and the substrate holder 48 seen from the direction of the arrow A shown in FIG. The figure which shows the process of forming into a pattern the pattern 14 of an electrically conductive film, and the pattern 12 of an insulating film alternately. The figure which shows the top view of the rotation mechanical mask 70 at the time of setting center angle (alpha) = 30 degrees. The figure which shows the top view of the rotation mechanical mask 80 at the time of setting center angle (alpha) = 60 degrees. The figure which shows the top view of the rotation mechanical mask 80 which is an example when the number k of an opening part is an odd number. The figure which shows the top view of the rotation mechanical mask 100 which is an example when the pattern of an electrically conductive film and the pattern of an insulating film are regular N squares (square). The figure which shows the top view of the rotation mechanical mask 110 when the pattern of an electrically conductive film and the pattern of an insulating film are a regular hexagon and m = 1. The figure which shows the top view of the rotation mechanical mask 120 when the pattern of an electrically conductive film and the pattern of an insulating film are a regular hexagon and m = 2. The figure which shows the top view of the rotation mechanical mask 130 when the pattern of an electrically conductive film and the pattern of an insulating film are regular pentagons and m = 2. The figure which shows a mode that coil formation is performed using the rotation mechanical mask 130. FIG. The figure which shows the board | substrate holder 48 'seen from the direction of arrow A shown in FIG. 3, and rotation mechanical mask 45'. The figure which shows the perspective view of the multilayer film coil 170 which has arrange | positioned the integral magnetic core to the axis | shaft of a multilayer film coil. The figure which shows the perspective view of the conventional chip-shaped coil. The figure which shows the cross section of the chip-shaped coil of FIG.

  Embodiments of the present invention will be described below with reference to the drawings. The same reference numerals are given to the same components in a plurality of drawings, and the description will not be repeated.

FIG. 1 is a perspective view showing an example of the structure of a multilayer film coil 200 of the present invention. On a cylindrical substrate 10 having a low height and made of a non-conductive glass material, for example, a circular arc having a length P-Lc along the circumference is cut out and the length Lc along the circumference of the annular shape is cut. A conductive film pattern 14a is formed with the notched P-Lc portion facing right (in FIG. 1). P is the circumference of one round around the axis forming the helical circle, and Lc is smaller than P. In this example, the insulating film pattern 12a is slightly wider than the conductive film pattern 14a. Pattern 12a of the insulating film, on the conductive film pattern 14a (substrate 10 opposite), in the direction of the clockwise looking down in a direction indicated by an arrow in the figure, the length Li along from the end point T ₂ peripheral A film is formed. The starting end point T ₂ is a position advanced from the starting end point T ₁ of the conductive film pattern 14 a by a length P-Li along the circumference in the clockwise direction when viewed from above the substrate 10. Here, Li is also smaller than P, and Li + Lc> P. In FIG. 1, P, Lc, and Li indicate the length of the outer periphery of the annular shape. However, the present invention is not limited to this, and any length of the ring shape may be used as long as it is determined in advance. For example, the length of the inner circumference or the length of the center may be used.

In this way, the length along the circumference of the conductive film pattern 14a and the insulating film pattern 12a immediately above the conductive film pattern 14a is just equal to the circumferential length P. Therefore, the end point T ₃ of the insulating film pattern 12a is terminated. , just abuts against the end point T ₁ of the start of the conductive film pattern 14a. Therefore, useless gaps or overlaps are not formed between the end point T ₁ and the end point T ₃ , and the conductive film pattern 14 a and the insulating film pattern 12 a are smoothly connected at the end of the end points. Then, the pattern formed on the portion at the end of the both end points, in this example, the conductive film pattern 14b, can be smoothly formed on the lower layer free from the voids and the unevenness due to the overlap. In this example, the electrode 16a is formed in the vicinity of the end of the conductive film pattern 14a.

And then, the pattern 14b of the conductive film to be the third layer is, the starting position advanced length P-Lc along the circumferential clockwise than the end point T ₂ of the beginning of the pattern 12a of the insulating film immediately below its is deposited as the end point, as well as the end points of the end of the pattern 14b of the conductive film comes into contact with the end point T ₂ of the beginning of the pattern 12a of the insulating film. Here, on the surface of the arc portion of the length P-Li where the first-layer conductive film pattern 14a is exposed, the first-layer conductive film pattern 14a and the third-layer conductive film pattern. 14b is directly connected. Thereafter, in the same manner, the alternate lamination of the insulating film pattern and the conductive film pattern is repeated. In this example, the other electrode 16b is formed on the conductive film pattern 14d of the seventh layer, and also serves as a protective film thereon. An insulating film pattern 12d is formed to form a helical multilayer coil 200 between the electrodes 16a and 16b.

  In this way, an optimally compact multilayer coil is constructed. In Example 1, Lc and Li need not have the same length. In this example, the insulating film patterns 12a to 12d are made slightly wider than the conductive film patterns 14a to 14d in order to enhance the prevention of short circuit between the conductive films. Good.

Furthermore, in this example, an annular shape is used for the conductive film pattern and the insulating film pattern. However, in the present invention, the helical shape of the coil draws a linear shape whose projection onto a plane perpendicular to the axis is a perfect circle. Not limited to things. As a modified example of the first embodiment, a helical coil that repeats a circular shape having a circumference including a non-circular circle or a polygon may be configured in the same manner as in the first embodiment.
[Method for Manufacturing Multilayer Coil 200]
Next, a method for manufacturing the multilayer coil coil 200 shown in FIG. 1 will be described.

  FIG. 2 shows an example of a conductive film forming mask 20 for forming the conductive film pattern 14 and an example of an insulating film forming mask 25 for forming the insulating film pattern 12. 2A shows an example of a conductive film forming mask 20 for forming a conductive film pattern 14, and FIG. 2B shows an example of an insulating film forming mask 25 for forming an insulating film pattern 12. The conductive film forming mask 20 and the insulating film forming mask 25 are mechanical masks made of, for example, a metal disk such as stainless steel, and are substantially in contact with the surface of the substrate 10 as shown in FIG. Positioned.

  The conductive film formation mask 20 and the insulation film formation mask 25 are respectively the conductive film pattern 14 of the multilayer coil 200 of FIG. 1, the conductive film pattern opening 21 corresponding to the insulation film pattern 12, and the insulation film. The opening 26 of the pattern is provided. That is, as shown in FIG. 2A, the opening 21 of the conductive film pattern has a length Lc along the circumference obtained by cutting out a circular arc having a length P-Lc along the circumference from a ring with a circumference P. It has an annular shape. Further, as shown in FIG. 2B, the opening 26 of the pattern of the insulating film is a circle having a length Li along the circumference obtained by cutting out an arc having a length P-Li along the circumference from a ring having a circumference P. It has a ring shape. The opening 26 of the insulating film pattern is slightly wider than the opening 21 of the conductive film pattern.

The pattern of the conductive film and the insulating film is formed by a general vapor deposition method or a sputtering method. FIG. 3 shows a schematic diagram of a vapor deposition apparatus used in the vacuum vapor deposition method, and the thin film formation method will be described. The inside of the vacuum chamber 40 is maintained at a high vacuum of, for example, 10 ⁻⁴ Pa or less by the exhaust pump 42. The electron gun 41 as a heat source evaporates the conductive film deposition source 43 and the insulating film deposition source 44 at the time of film formation. The conductive film evaporation source 43, for example Cu, evaporation source 44 of the insulating film is, for example, _S i _{O 2} or the like is used.

  The substrate holder 48 and the substrate 10 are disposed at opposite positions, and the conductive film formation mask 20 or the insulation film formation mask 25 is positioned on the substrate holder 48 and the substrate 10 so as to be substantially in contact with the surface of the substrate 10. Here, the conductive film formation mask 20 and the insulation film formation mask 25 are alternately installed on the substrate 10. When the conductive film formation mask 20 is installed, the conductive film deposition source 43 is replaced by the insulation film formation mask 25. When installed, an insulating film deposition source 44 is deposited by each electron gun 41. At the time of the replacement installation, with respect to the same direction around the axis, the starting end point of the opening 26 of the insulating film pattern related to that direction of the insulating film formation mask 25 is that of the conductive film formation mask 20 installed immediately before that. The position of the conductive film pattern with respect to the direction is aligned so as to reach a position advanced by P-Li along the circumference with respect to the position of the starting end point of the opening 21 of the conductive film pattern. Similarly, the starting end point of the opening portion 21 of the conductive film pattern related to the direction of the conductive film forming mask 20 is the beginning of the opening portion 26 of the insulating film pattern related to the direction of the insulating film forming mask 25 installed immediately before the end point. It is aligned so as to come to a position advanced by P-Lc along the circumference with respect to the direction of the end point.

  Thus, the multilayer film coil 200 of FIG. 1 can be laminated | stacked by carrying out film-forming by installing two mechanical masks alternately, shifting an azimuth | direction around an axis | shaft.

  As a modification, even if the conductive film pattern and the insulating film pattern have a shape obtained by cutting out one side or a plurality of continuous sides from a regular polygon, two coils are exactly the same. The mechanical masks can be alternately installed while being shifted around the axis to form a film. Alternatively, the pattern of the conductive film and the pattern of the insulating film are made the same in terms of length and width, and only one mechanical mask is shared by both, and the film is alternately formed while shifting the direction around the axis. Can also be produced. In addition, a helical multilayer coil whose projection on the vertical cross section is not a perfect circle or regular polygon is also prepared by preparing as many mechanical masks as necessary for the conductive film and insulating film patterns. Can be stacked.

  The above is the most general case, but in particular, the helical shape of the coil is a perfect circle (radius R), and k is k ≧ 3 for both the conductive film pattern and the insulating film pattern. As an integer

If the arc shape has a central angle Φ that can be written as follows, the fabrication is further facilitated. That is, in this case, instead of the two mechanical masks of the first embodiment, a single rotating mechanical mask in which both the opening of the conductive film pattern and the opening of the insulating film pattern are formed is used. By alternately forming the films while rotating in the vacuum chamber, a plurality of multilayer coils can be efficiently manufactured in parallel without replacing the mechanical mask. Hereinafter, this example will be described in detail.

  FIG. 4 shows a schematic view of a vapor deposition apparatus using a rotating mechanical mask. A substrate holder 48, a plurality of coated substrates (substrates 10 a and 10 b in the illustrated example), and a rotating mechanical mask 45 are disposed at positions facing the vapor deposition sources 43 and 44. The coated substrate is the same as the substrate 10 (FIG. 1) described above, and is fixed to the substrate holder 48 with the surface on the side of the vapor deposition sources 43 and 44 as the coated surface. A rotating mechanical mask 45 is disposed in the vicinity of the coating surface of the coating substrate.

When the rotary mechanical mask 45 is rotated by the rotary motor 49, the opening portion of the conductive film pattern and the opening portion of the insulating film pattern located on each coating substrate are switched. When the opening portion of the conductive film pattern is disposed on the coating surface of the coating substrate (all), the evaporation source 43 is evaporated by the electron gun 41, and the conductive film (for example, Cu) pattern is formed on the coating surface of the coating substrate. Is deposited. When forming an insulating film pattern, an opening portion of the insulating film pattern is disposed on the coating surface of the coating substrate, the evaporation source 44 is evaporated, and a pattern of the insulating film (for example, S _i O ₂ ) is formed. Is done.

  The rotating mechanical mask is spaced at an angle equal to α in the equation (1) with respect to the direction from the rotation axis, and the center of the ring shape of the pattern is on the circumference of the same radius Rm around the rotation axis. Thus, a total of k conductive film or insulating film pattern openings are provided.

  As an example of a multilayer coil that can be manufactured using such a rotating mechanical mask, a multilayer coil in which the conductive film pattern and the insulating film pattern are both arcs with a central angle Φ = 270 ° will be described first. In this case, α = 90 ° and integer k = 4 in the above equation (1). FIG. 5 shows a rotating mechanical mask 45 and a substrate holder 48 for manufacturing the multilayer film coil of this example as seen from the direction of arrow A shown in FIG. FIG. 5A is a diagram showing the shape of the rotating mechanical mask 45, and FIG. 5B is a diagram showing the arrangement of the substrate holder 48 and the substrates 10a and 10b. In the rotating mechanical mask 45, an opening portion of a ring-shaped conductive film pattern in which an arc corresponding to a central angle α = 90 ° is cut out on a circumference having a predetermined radius Rm centered on a rotation axis (origin) 47. 45a and 45b, and two openings 46a and 46b in the insulating film pattern, a total of four, all in the same direction, an angle equal to the central angle of the pattern notch, that is, every α = 90 ° They are alternately provided in spaced directions.

  The two coated substrates, the substrate 10a and the substrate 10b, are arranged so that they can be simultaneously aligned with the positions of the openings 45a and 45b of the conductive film pattern in FIG. 5A, for example. In other words, the conductive film pattern openings 45a and 45b of the rotating mechanical mask 45 or the insulating film pattern openings 46a and 46b are positioned on the substrate holder 48 in a position corresponding to one of the openings of FIG. It arrange | positions as illustrated in b) (Of course, any one may be arrange | positioned).

  FIG. 6 shows a process of alternately forming the conductive film pattern 14 and the insulating film pattern 12. FIG. 6A shows a state in which a conductive film pattern 14a with an electrode 16a is formed on the substrate 10a shown in FIG. 5B. The description will be made on the formation of a thin film on the substrate 10a. However, if the substrate 10b is also arranged on the substrate holder 48 as shown in FIG. A thin film is formed simultaneously.

  The conductive film pattern 14a in FIG. 6A is obtained by rotating the rotating mechanical mask 45 at the position shown in FIG. 5A by 90 ° counterclockwise (viewed from the direction of arrow A). The opening 45a is positioned and formed on the substrate 10a. The electrode 16a is formed in advance by an electrode forming mask (not shown).

  The insulating film pattern 12a shown in FIG. 6B is obtained by rotating the rotating mechanical mask 45 when the conductive film pattern 14a of FIG. It is the insulating film formed on the top. At this time, the insulating film pattern 12a is formed from a position advanced by a length P-Li along the circumference in the clockwise direction from the starting end point of the conductive film pattern 14a. In the description using FIG. 6, the length along the circumference of the center portion of the annular shape is simply referred to as the length along the circumference.

  The conductive film pattern 14b shown in FIG. 6C is formed by further rotating the rotating mechanical mask 45 by 90 ° in the clockwise direction and positioning the opening 45b of the conductive film pattern at the position of the substrate 10a. It is. At this time, the conductive film pattern 14b is formed from a position advanced by a length P-Lc along the circumference in the clockwise direction from the starting end point of the insulating film pattern 12a. Conduction is conducted at a portion indicated by hatching with the pattern 14a.

  In the insulating film pattern 12b shown in FIG. 6D, the rotating mechanical mask 45 is further rotated 90 ° in the clockwise direction, and the length P-Li along the circumference in the clockwise direction from the starting end point of the conductive film pattern 14b. The film is formed from the advanced position.

In the conductive film pattern 14c shown in FIG. 6E, the rotating mechanical mask 45 is further rotated 90 ° clockwise, and the length P-Lc along the circumference in the clockwise direction from the starting end point of the insulating film pattern 12b. The film is formed from the advanced position. Then, the electrode 16b is formed by an electrode forming mask (not shown). The conductive film pattern 14c is electrically connected to the previous conductive film pattern 14b at a hatched portion.
[Modification 1]
Although the example in the case of the integer k = 4 has been described above, in general, when k is an even number, the rotating mechanical mask is alternately conductive at intervals of an angle α = 360 ° / k per direction from the rotation axis. By providing k / 2 openings for the pattern of the film and openings for the pattern of the insulating film, the number of the coatings is one or more and no more than k / 2 at the position corresponding to one of the openings. A substrate can be placed to form a film. Therefore, when k is an even number, it is possible to change the shapes of both patterns. Therefore, when k is an even number, it is advantageous to make the widths of the openings 45a and 45b of the conductive film pattern narrower than the widths of the openings 46a and 46b of the insulating film pattern as shown in FIG. is there. This can make it difficult for a short circuit between the patterns of the conductive films to be stacked.

  The lengths Li and Lc along the circumference of the insulating film pattern and the conductive film pattern are not limited to the example described above. The length can be set to an arbitrary length. FIG. 7 shows a plan view of the rotating mechanical mask 70 when the central angle α for determining the arc length P-Li or P-Lc is α = 30 °.

  The rotating mechanical mask 70 has a length along the circumference in which the arc length P-Lc with respect to the central angle α = 30 ° is cut out on the circumference having a predetermined radius Rm with the rotation axis (origin) 76 as the center. A total of 12 openings 70a to 70f in the ring-shaped conductive film pattern of Lc and 6 openings 71a to 71f in the pattern of the insulating film having a circumferential length of Li (k = 12) All are alternately arranged in the same direction every 30 °. In FIG. 7, the openings 70a to 70f in the conductive film pattern are shown in gray, and the openings 71a to 71f in the insulating film pattern are shown in white.

  One or more k / 2 or less coated substrates are arranged at positions corresponding to any one of the openings of the conductive film pattern or the insulating film pattern of the rotating mechanical mask 70, and the coated substrate One of the conductive film pattern and the insulating film pattern is formed on the substrate, and the rotating mechanical mask is rotated about the rotation axis 76 in the same direction by an angle corresponding to the central angle α to form the conductive film pattern and the insulating film pattern. A multilayer coil is manufactured by alternately laminating patterns.

The example in which k = 4 and k = 12 has been described above. However, if k is an even number, k / 2 multilayer coils can be manufactured at the same time.
[Modification 2]
Example 1, Example 2, Example 2 In Modification 1, the pattern of the insulating film was wider than the pattern of the conductive film. However, the conductive film pattern and the insulating film pattern may have the same shape. FIG. 8 shows a rotating mechanical mask 80 in which the conductive film pattern and the insulating film pattern in which the arc length with respect to the central angles Φ = 300 ° and α = 60 ° is cut out are the same. Since the rotating mechanical mask 80 has the same opening pattern, the opening of the conductive film pattern and the opening of the insulating film pattern are common and are not distinguished, and one or more at positions corresponding to these opening portions. By arranging a maximum of k = 6 coated substrates and rotating the rotating mechanical mask by α = 60 °, the conductive film and the insulating film can be alternately formed.

  In the second embodiment, k is an even number, but k may be an odd number. FIG. 9 shows a plan view of the rotating mechanical mask 90 when k = 3 (α = 120 °).

  When k is an odd number, the opening of the conductive film pattern and the opening of the insulating film pattern cannot be alternately provided over the entire circumference of the rotating mechanical mask 90. In other words, when k is an odd number, the opening of the conductive film pattern and the opening of the insulating film pattern have a common shape, and the opening is used in common (similar to the above-described second modification 2). The For example, when k = 3, the openings 91, 92, 93 are provided in the same orientation every α = 120 ° on the circumference of a predetermined radius Rm centered on the rotation axis (origin) 96. Here, the coated substrate can be disposed on the substrate holder 48 corresponding to all the openings. That is, the number of the coated substrates when using the rotating mechanical mask 90 is 1 or more and not more than k at the position corresponding to any opening. In the case of FIG. 9, up to three coated substrates can be arranged.

  The process of forming the insulating film pattern and the conductive film pattern using the rotating mechanical mask 90 is different only in that the rotation angle of the rotating mechanical mask 90 is 120 degrees each time each film is formed. This is exactly the same as the process described in FIG. The same applies to odd numbers 5, 7, 9, and 11 other than 3.

  In Example 2 and Example 3, the case where the shape of the pattern of the insulating film and the pattern of the conductive film is an annular shape has been described. However, the shape may be a regular N-gon with N ≧ 3 (N is an integer). In that case, m is an integer satisfying 1 ≦ m <N / 2, and the pattern of the conductive film and the insulating film is formed in a shape in which m sides continuous from the regular N-gon are notched. That is, the lengths Lc and Li of the conductive film and insulating film patterns described above correspond to the length of N−m continuous sides of a regular N-gon, where m <N / 2. This is to ensure the general condition Li + Lc> P described in connection with the first embodiment. FIG. 10 shows the rotating mechanical mask 100 when N = 4 and a regular square. From the condition of the above inequality, m = 1 is inevitably in this case. Therefore, the rotation mechanical mask 100 has a central angle α ′ = 360 ° / (N / m) = 360 ° / k ′ = 90 ° on the circumference of a predetermined radius Rm with the rotation axis (origin) 106 as the center. For each (k ′ = N / m will be described later), the openings 101a and 101b of the conductive film pattern of a regular square with one side cut out (a shape in which the “Ka” of Katakana is reversed to the left and right) are insulated from each other. A total of four openings 102a and 102b in the pattern of the film are provided in total, and are alternately provided every 90 degrees in the same direction.

Assuming that the number of cut-out sides is m, in FIG. 10, the openings 101a and 101b of the conductive film pattern and the openings 102a and 102b of the insulating film pattern are Nm = 4-1 = 3. The side is a continuous shape, and the length corresponding to the above-described Li and Lc is the continuous length of three sides. In general, if m is a divisor of N such that k ′ = N / m is an even number (in this case k ′ = 4/1 = 4), the openings of the conductive film pattern and the insulating film It is possible to change the shape of the opening of the pattern. That is, in the example of FIG. 10, it is possible to change the shapes of the openings 102a and 102b in the insulating film pattern and the openings 101a and 101b in the conductive film pattern. Then, the openings 102a and 102b in the insulating film pattern can be formed to have a relatively wider shape than the openings 101a and 101b in the conductive film pattern. It is possible to make it difficult to generate a short circuit.
[Modification]
On the other hand, the case where k ′ = N / m is an odd number will be described next. FIG. 11 shows an example of a rotating mechanical mask 110 as a modified example of the rotating mechanical mask 100 with a regular hexagon (N = 6) and m = 2. In this example, k ′ = N / m = 3. The rotating mechanical mask 110 has three regular hexagonal openings 111 to 113 having two sides cut out at every central angle α ′ = 120 ° on the circumference of a predetermined radius Rm centered on the rotating shaft 116. , All provided in the same direction at every 120 ° angle. When k ′ is an odd number, the opening of the insulating film pattern and the opening of the conductive film pattern have a common shape for the same reason described in the third embodiment.

  Generally, when k ′ is an odd number, one or more and N or less coated substrates are arranged at positions corresponding to the openings of the rotating mechanical mask (110), and a conductive film pattern or insulating film is formed on the coated substrate. One of the patterns is formed. Then, the rotating mechanical mask (110) is rotated about the rotation axis (origin) (116) in the same direction by the central angle α ′, and the conductive film pattern and the insulating film pattern are alternately laminated to form a multilayer film. A coil is produced.

  Similarly, as another example in the case where k ′ is an odd number, FIG. 12 shows an example of a rotating mechanical mask 120 having a regular pentagon (N = 5) and m = 1. The rotating mechanical mask 120 has a regular pentagonal opening in which one side is notched at every central angle α ′ = 72 ° (360 ° / N) on the circumference of a predetermined radius Rm centered on the rotating shaft 126. Five of 121 to 125 are provided at every 72 ° angle in the same direction.

  The opening portion of the insulating film pattern and the opening portion of the conductive film pattern have a common shape, and the rotating mechanical mask 120 has a central angle α ′ in the same direction around the rotation axis (origin) 126. The manufacturing method for forming each film by rotating the angle is the same as that of the fourth embodiment.

  The case where k ′ = N / m is selected to be an even number or an odd number, that is, m is a divisor of N has been described above with reference to the examples illustrated in FIGS.

  However, even if an integer set N and m is selected such that m is not a divisor of N, that is, k ′ = N / m is not an integer (even or odd), the present invention is still implemented using a rotating mechanical mask. It is possible to do. In such a case, the opening is common to the pattern of the conductive film and the pattern of the insulating film at an angle of 360 ° / N with respect to the direction from the rotation axis in the rotating mechanical mask. 1 or more and N or less coated substrates are fixed at positions corresponding to the openings, and the rotating mechanical mask is rotated around the rotation axis by an angle equal to 360 ° · m / N. A conductive film and an insulating film may be alternately formed.

  FIG. 13 shows an example of the rotating mechanical mask 130 where N = 5 and m = 2. The rotating mechanical mask 130 has five regular pentagonal openings 131 to 135 with two sides cut out on the circumference of a predetermined radius Rm with the rotation axis 136 as the center, all in the same direction at 360 ° / N = 360 ° / 5 = 72 °. Then, the conductive film and the insulating film are alternately formed and stacked by rotating twice the angle of 72 °, that is, an angle equal to 144 °, so that the conductive pattern is connected to the left hand and a coil can be formed.

The state of this coil formation is shown in FIG. FIG. 14A shows a state in which the conductive film patterns e ₁ , d ₁ , and c ₁ are formed by disposing a film substrate at a position corresponding to the opening 131 in FIG. In FIG. 14B, the rotating mechanical mask 130 is rotated 360 ° · 2/5 = 144 ° clockwise, and the insulating film patterns b ₁ , a ₁ , e ₂ are formed in a state where the opening 134 is on the coating substrate. The state where the film is formed is shown. An insulating film pattern e ₂ is formed on the conductive film pattern e ₁ .

FIG. 14C shows the conductive film patterns d ₂ , c ₂ , b ₂ in a state in which the rotating mechanical mask 130 is further rotated 360 ° · 2/5 = 144 ° clockwise and the opening 132 is on the coating substrate. Shows a state where the film is formed. A conductive film pattern b _{2, which} is electrically connected to the _first conductive film patterns d ₁ and c ₁ , is formed on the insulating film pattern b ₁ , and the coil conductor is extended in the counterclockwise direction. I understand that. FIG. 14D shows a state in which the insulating film pattern d ₃ is extended on the conductive film pattern d _{2 in} the next insulating film pattern forming step. FIG. 14 (e) shows a state where the conductive film pattern a ₃ on top of the pattern a ₂ is the insulating film is formed in the next deposition process. Note that the coil creation method described in the fifth embodiment, that is, the method of alternately forming the conductive film pattern and the insulating film pattern while rotating the rotating mechanical mask by an angle equal to 360 ° · m / N, The present invention is not limited only to the case where m is not a divisor of N. Even when k ′ = N / m is an even number or an odd number, it is only necessary that the conductive film pattern and the insulating film pattern have the same shape. More generally, this can be used to produce a regular N-angle multilayer coil.

  In the example described above, the conductive film pattern and the insulating film pattern are alternately formed each time the rotating mechanical mask is rotated clockwise by the central angle α or α ′ as seen from the direction of the arrow A shown in FIG. In this method, a multilayer coil is formed by film formation. In this manufacturing method, a left-handed multilayer coil is manufactured. That is, the rotating direction of the rotating mechanical mask and the winding direction of the coil are opposite to each other.

  The right-handed multilayer coil can be manufactured in the same manner. FIG. 15 (a) shows a rotating mechanical mask 45 ′ for producing a right-handed multilayer coil, and FIG. 15 (b) shows the substrates 10a ′ and 10b ′ on the substrate holder 48 ′. FIGS. 15A and 15B are diagrams in which FIG. 5 described above is symmetric with respect to the Y axis (the direction in which the openings 45a and 45b are arranged). However, it works the same only in the direction of the opening.

  A right-handed multilayer coil can be produced by alternately forming a conductive film pattern and an insulating film pattern while rotating the rotating mechanical mask 45 ′ counterclockwise by a central angle α. The process is the same as that in FIG. 6 except that the rotation direction of the rotating mechanical mask 45 'is different.

  FIG. 16 is a perspective view of a multilayer coil 170 in which an integral (bulk) magnetic body is provided at the position of the helical axis of the multilayer coil. The multilayer coil 170 is obtained by providing an integral magnetic body 174 of, for example, a ferrite material at the position of the helical axis of the multilayer coil 171 formed on the substrate 173.

  According to the method for manufacturing a multilayer coil of the present invention, since the insulating film pattern and the conductive film pattern can be selectively formed without depending on the photolithography process, as shown in FIG. It is possible to easily dispose an integral magnetic body at the center of each. The performance of the multilayer coil can be improved by providing an integral magnetic body having a strong action.

  FIG. 16 also shows a concept in which the multilayer film coil 172 is stacked on the multilayer film coil 171 to form one multilayer film coil 170. The multilayer coil 172 to be combined may be a coil wound in the same direction as the multilayer film coil 171 or may be wound in the opposite direction. The multilayer film coil 172 is a coil manufactured by the method of the present invention on a very thin donut-shaped substrate. In FIG. 16, the notation of a donut-shaped substrate is omitted.

  In this way, a single multilayer coil may be produced by combining a plurality of multilayer coils already formed. According to this method, it is also possible to manufacture a multilayer film coil having various specifications with respect to the magnetic body 174.

  As described above, in the multilayer coil according to the present invention, the conductor film layers constituting the coil are directly connected to each other without using conductor through holes (often referred to as vias, via holes, etc.) provided in the insulating layer. In addition, the present invention provides a multilayer coil structure in which each layer is disposed in an optimum manner for miniaturization of the coil. Further, the present invention provides a configuration that is a multilayer film coil and that can easily provide a bulk magnetic core in the center.

  In addition, according to the multilayer coil manufacturing method of the present invention, no photolithography process is required. In addition, by using a mechanical mask and by rotating only one mechanical mask in the chamber depending on the form of the coil, conductive layers and insulating layers can be alternately stacked. Also, the end point at the end of the pattern of the conductive film is always brought into contact with the start end point of the insulating film immediately below and ends. By being configured in this way, the multilayer coil of the present invention enables optimum compact and smooth alternating lamination without forming unnecessary overlapping portions and gaps between patterns and without unnecessary irregularities.

Conductive thin film 2e, 2f, 2g
Lower insulating layer 3a Upper insulating layer 3b
Through hole 4a, 4b
Coil terminal 5a Pad terminal 5b
Protective film 7
Film core 9a, 9b, 9c
Substrate 10, 10a, 10b, 173
Insulating film patterns 12a to 12d Conductive film patterns 14a to 14d
Electrode 16a, 16b
Conductive film formation mask 20 Insulation film formation mask 25
Vacuum chamber 40 Electron gun 41
Exhaust pump 42 Deposition source 43, 44
Substrate holder 48 Rotating motor 49
Rotation axis (origin) 47, 76, 86, 96, 106, 116, 126, 136
Rotating mechanical mask 45, 70, 80, 90, 100, 110, 120, 130
Openings 21, 26, 45a, 45b, 46a, 46b, 70a-70f, 71a-71f, 80a-80f, 91-93, 101a, 101b, 102a, 102b, 111-113, 121-125, 131-135
Multilayer coil 170,171,172,200
Magnetic body 174

Claims (14)

A multilayer coil in which conductive film patterns and insulating film patterns are alternately stacked on a substrate, and the conductive film patterns are connected to each other to form a helical coil,
When the circumferential length of one round around the helical axis is P, the conductive film pattern and the insulating film pattern have a predetermined circumferential length Lc, Li shorter than P, and the substrate Except in the case of the uppermost lower layer, with respect to the same direction around the axis, the starting end point of the insulating film pattern advances by a length P-Li along the circumference from the starting end point of the conductive film pattern immediately below it. The starting end point of the conductive film pattern is aligned to the position advanced by the length P-Lc along the circumference from the starting end point of the insulating film pattern immediately below the conductive film pattern. A multilayer coil in which Li + Lc> P. The multilayer coil coil according to claim 1, wherein
The helical shape is a perfect circle whose projection onto a plane perpendicular to the axis is a radius R, and the conductive film pattern and the insulating film pattern are both center angles φ with k being an integer of k ≧ 3. But,
φ = 360 ° · Lc / 2πR = 360 ° · Li / 2πR = 360 ° -α
However, α = 360 ° / k
The multilayer film coil is characterized in that it has an arc shape corresponding to the center angle φ, and the lengths P-Li and P-Lc along the circumference are both arc lengths of the center angle α. The multilayer film coil according to claim 2,
The multilayer film coil, wherein k is an even number, and a width of the pattern of the insulating film is larger than a width of the pattern of the conductive film. The multilayer film coil according to claim 2,
The multilayer film coil, wherein k is an odd number, and the pattern of the insulating film and the pattern of the conductive film have the same shape. The multilayer coil coil according to claim 1,
The helical shape is a regular N-gon with a projection onto a plane perpendicular to the axis of N ≧ 3 (N is an integer),
The conductive film pattern and the insulating film pattern each have a continuous shape of Nm sides of the regular N-gon, where m is an integer satisfying 1 ≦ m <N / 2, and the length along the circumference. Both the thicknesses Li and Lc are continuous lengths of the Nm sides. The multilayer coil coil according to claim 5, wherein
The multilayer coil, wherein the insulating film pattern and the conductive film pattern have the same shape. The multilayer coil coil according to claim 5, wherein
The multilayer film is characterized in that m is a divisor of N such that k ′ = N / m is an even number, and the pattern of the insulating film has a relatively wider shape than the pattern of the conductive film. coil. The multilayer coil coil according to claim 5, wherein
M is a divisor of N such that k ′ = N / m is an odd number. A method for producing a multilayer coil coil according to claim 3 in a film formation chamber,
The conductive film pattern openings and the insulating film pattern openings are k / 2 pieces each at an angle equal to the central angle α on the circumference of a predetermined radius around the rotation axis. Using rotating mechanical masks that are alternately arranged in the same direction,
1 or more and k / 2 or less coated substrates are disposed at positions corresponding to any one of the openings of the conductive film pattern or the insulating film pattern of the rotating mechanical mask,
Forming one of the conductive film pattern or the insulating film pattern on the coated substrate,
The rotary mechanical mask is rotated about the rotation axis by the central angle α in the same direction, and the conductive film pattern and the insulating film pattern are alternately laminated to produce a multilayer coil. A multilayer film coil manufacturing method. A method for producing the multilayer coil according to claim 4 in a film formation chamber,
For each angle equal to the central angle α on the circumference of a predetermined radius around the rotation axis, there are k openings that are common to the conductive film pattern and the insulating film pattern, all alternately in the same direction. Using the arranged rotating mechanical mask,
1 or more and k or less coated substrates are disposed at positions corresponding to any of the openings of the rotating mechanical mask,
Forming one of the conductive film pattern or the insulating film pattern on the coated substrate,
The rotating mechanical mask is rotated about the rotation axis by the angle of the central angle α in the same direction, and the conductive film pattern and the insulating film pattern are alternately stacked to produce a multilayer coil. Multilayer coil manufacturing method. A method for producing a multilayer coil according to claim 6 in a film formation chamber,
On the circumference of the same diameter around the rotation axis, there are N openings common to the conductive film pattern and the insulating film pattern at intervals equal to 360 ° / N per direction from the rotation axis. , Using rotating mechanical masks that are all arranged in the same direction,
In the film forming chamber, one or more and N or less substrates are fixed to positions corresponding to the rotating mechanical mask below the opening at the same time, and one of the conductive film and the insulating film is formed, and the rotating mechanical mask is formed. Is rotated around the rotation axis by an angle equal to 360 ° · m / N, and the formation of the other of the conductive film or the insulating film is repeated, whereby the pattern of the conductive film and the insulating film A multilayer coil manufacturing method, wherein patterns are alternately laminated. A method for producing the multilayer film coil according to claim 7 in a film formation chamber,
The conductive film pattern opening and the insulating film pattern opening are spaced apart by an angle equal to a central angle α ′ = 360 ° / k ′ on the circumference of a predetermined radius centered on the rotation axis. Using rotating mechanical masks that are alternately arranged in the same direction, k ′, with k ′ / 2 parts in total,
One or more k ′ / 2 or less coated substrates are arranged at positions corresponding to any one of the openings of the conductive film pattern or the insulating film pattern of the rotating mechanical mask. ,
Forming one of the conductive film pattern or the insulating film pattern on the coated substrate,
The rotating mechanical mask is rotated by an angle corresponding to the central angle α ′ in the same direction around the rotation axis, and the conductive film pattern and the insulating film pattern are alternately stacked to form a multilayer coil. A multilayer film coil manufacturing method to be manufactured. A method for producing the multilayer film coil according to claim 8 in a film formation chamber,
An opening common to the conductive film pattern and the insulating film pattern on the circumference of a predetermined radius centered on the rotation axis, with an interval equal to the central angle α ′ = 360 ° / k ′. K ', using rotating mechanical masks arranged alternately in the same direction,
1 or more and k ′ or less coated substrates are disposed at positions corresponding to the openings of the rotating mechanical mask,
Forming one of the conductive film pattern or the insulating film pattern on the coated substrate,
The rotating mechanical mask is rotated about the rotation axis by the central angle α ′ in the same direction, and the conductive film pattern and the insulating film pattern are alternately stacked to form a multilayer coil. A multilayer film coil manufacturing method. The multilayer coil coil according to any one of claims 1 to 8,
A multilayer coil, wherein a magnetic core of an integral magnetic material is provided at the position of the helical shaft on the substrate.

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