JP2012174954A - Semiconductor light-emitting device and light source device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve a light source device which can mount a plurality of semiconductor light-emitting devices at high density, reduce the number of components such as a heat sink, and efficiently radiate heat generated from the semiconductor light-emitting elements.SOLUTION: A semiconductor light-emitting device 100 comprises a base 121 made of metal which can radiate light by using a semiconductor material and has a polygon planar shape of a principal surface, and a semiconductor light-emitting element 110 mounted on the principal surface of the base 121. The base 121 has fitting parts 150a, 150b, 151a and 151b on lateral faces thereof, which are capable of being fitted with bases 121 of other semiconductor light-emitting devices 100 each having the same structure.

Description

  The present invention relates to a semiconductor light emitting device and a light source device using the same, and more particularly to a semiconductor light emitting device that can be fitted to each other and a light source device using the same.

  A semiconductor light emitting device such as a semiconductor laser device that can emit light using a semiconductor material has features such as low cost, small size, and long life. In particular, a semiconductor light-emitting device having a waveguide, such as a semiconductor laser device, is characterized by excellent directivity. Accordingly, development of display devices such as projectors and liquid crystal backlights using such a semiconductor light emitting device as a light source is in progress. Further, such semiconductor light emitting devices are also being applied to industrial applications. For example, a laser scribing apparatus and a laser annealing apparatus using a semiconductor laser device as a light source are being put into practical use. Since the light source device used in these devices requires a high light output with a light output of 1 watt or more, for example, a semiconductor light emitting device on which a semiconductor light emitting element is mounted is required to have high heat dissipation characteristics. A light source device on which a plurality of semiconductor light emitting devices are mounted is used.

  A conventional semiconductor light emitting device and light source device will be described with reference to FIGS. A conventional general-purpose semiconductor laser device having a configuration in which a metal package called a TO-type package is sealed with a cap is proposed in Patent Document 1 and the like. As shown in FIG. 10, the semiconductor light emitting device 900 according to the first conventional example includes a semiconductor light emitting element 901, a stem 910, and a cap 920. The stem 910 includes a base 911, an element mounting base 912 formed on the base 911, and leads 913 connected to an external power source (not shown). The cap 920 includes a cover 921 having an opening 921a and a flange 921b, and a light extraction window 922 formed so as to close the opening 921a.

  A submount 902 is formed on the element mounting base 912, and the semiconductor light emitting element 901 is mounted on the submount 902. The semiconductor light emitting element 901 is electrically connected to an arbitrary lead by a bonding wire 930. Light generated from the semiconductor light emitting element 901 is emitted to the outside of the semiconductor light emitting device 900 through the light extraction window 922. The flange portion 921b is welded to the main surface of the base 911 of the stem 910. For this reason, the inside of the cap 920 is hermetically sealed.

  A conventional light source device including a plurality of such semiconductor light emitting devices is presented in Patent Document 2 and the like. As shown in FIGS. 11 and 12, the light source device 940 according to the second conventional example includes a plurality of semiconductor light emitting devices 941. Each semiconductor light emitting device 941 is mounted so as to be accommodated in a through hole 944 formed in the heat sink 942 and the holder 943, and is mounted so as to be sandwiched between the heat sink 942 and the holder 943. The heat sink 942 and the holding body 943 are fixed to a mounting base 945. Light generated from the semiconductor light emitting device 941 is emitted to the outside of the light source device 940 through the collimating lens 946 and the condenser lens 947. A part of the heat sink 942 is in contact with a part of the back surface of the base of the stem of the semiconductor light emitting device 941. The heat generated from each semiconductor light emitting device 941 is conducted to the heat radiating plate 942 via this contact surface and released into the atmosphere.

  In such a configuration, the heat sink is important in order to secure a path for radiating the heat generated from the semiconductor light emitting device. On the other hand, in order to reduce manufacturing costs, it is also important to reduce the number of parts.

  Thus, a conventional semiconductor light emitting device using a stem base as a heat radiating plate is presented in Patent Document 3 and the like. As shown in FIG. 13, a semiconductor light emitting device 970 according to a third conventional example is constituted by a stem 980, a cap 990, and a semiconductor light emitting element (disposed inside the cap 990 in the figure). The semiconductor light emitting device 970 is substantially the same as the configuration of the device shown in FIG. 10, but the shape of the base 981 of the stem 980 is different. In the semiconductor light emitting device 970, the base 981 has a shape that protrudes greatly, and its surface area is larger than that of the device shown in FIG. Thereby, since the base 981 itself has a function of a heat sink, a heat sink is unnecessary in the light source device using such a semiconductor light emitting device.

JP 2009-135235 A JP 2010-198772 A JP 2009-43878 A

  However, the light source device according to the second conventional example has a problem that the mounting density cannot be increased. As described above, the individual semiconductor light emitting devices are sandwiched between the heat sink and the holder, and in order to maintain the mechanical strength of the heat sink, it is necessary to separate the semiconductor light emitting devices by at least about 1 mm. . Moreover, the heat sink and the holder need to be provided according to the number of semiconductor light emitting devices to be used. For this reason, it is not possible to reduce the cost by using common parts.

  In the semiconductor light emitting device according to the third conventional example, since the stem base itself functions as a heat sink, a heat sink is not required when forming the light source device, but the surface area of the main surface of the base is small. Since it is large, the mounting density cannot be increased in a light source device using a plurality of semiconductor light emitting devices.

  In view of the above-described problems, the present invention has an object to mount a plurality of semiconductor light emitting devices at a high density, to reduce members such as a heat radiating plate, and to efficiently dissipate heat generated from the semiconductor light emitting element. The object is to obtain a light source device capable of doing this.

  In order to achieve the above object, the present invention has a configuration in which a plurality of semiconductor light emitting devices can be fitted to each other.

  Specifically, a semiconductor light emitting device according to the present invention includes a base made of metal, the planar shape of the main surface of which is a polygon, and a semiconductor light emitting element mounted on the main surface of the base. The base has a fitting portion on its side surface that can be fitted with a base of another semiconductor light emitting device having the same configuration.

  According to the semiconductor light emitting device of the present invention, the semiconductor light emitting device can be mounted at a high density because the semiconductor light emitting device has the fitting portion that can be fitted to the base of another semiconductor light emitting device having the same configuration. . As a result, it is possible to easily obtain a light source device that can reduce members such as a heat radiating plate and efficiently radiate heat generated from the semiconductor light emitting element.

  In the semiconductor light emitting device according to the present invention, the fitting portion includes a concave portion and a convex portion formed on the side surface of the base, and when the plurality of semiconductor light emitting devices are assembled, the concave portion in one adjacent semiconductor light emitting device and A plurality of semiconductor light emitting devices may be assembled by fitting a convex portion in the other semiconductor light emitting device and fitting a convex portion in one semiconductor light emitting device and a concave portion in the other semiconductor light emitting device.

  In the semiconductor light emitting device according to the present invention, the base is preferably made of a metal containing copper or aluminum as a main component.

  If it does in this way, the heat conductivity of a base can be made high and the heat | fever which arises from a semiconductor light-emitting element can be discharge | released outside efficiently. In addition, the base can be easily manufactured by press working, and the base can be manufactured in large quantities at low cost.

  A light source device according to the present invention includes a plurality of the semiconductor light emitting devices, and the plurality of semiconductor light emitting devices are fitted to each other on the side surface of the base.

  According to the light source device of the present invention, the density of the light emitting points of the semiconductor light emitting device can be increased, members such as a heat sink can be reduced, and the heat generated from the semiconductor light emitting device can be efficiently radiated. It becomes.

  The light source device according to the present invention further includes a fixing member for fixing the plurality of semiconductor light emitting devices, and the fixing member is formed so that a part thereof is fitted to a side surface of the base of the plurality of semiconductor light emitting devices. It is preferable.

  If it does in this way, the contact of the side surfaces of a base will become more reliable, and heat dissipation can be improved.

  In the light source device according to the present invention, it is preferable that the side surfaces of the base are bonded to each other with a solder material.

  In this way, it is possible to form a light source device using a plurality of semiconductor light emitting devices with high self-standing strength without using a specific fixing member.

  According to the semiconductor light emitting device and the light source device using the semiconductor light emitting device according to the present invention, the density of the light emitting points of the plurality of semiconductor light emitting devices can be increased, the number of parts can be reduced, and the heat generated from the semiconductor light emitting device can be reduced. Heat can be radiated efficiently.

(A) And (b) shows the semiconductor light-emitting device concerning the 1st Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the Ib-Ib line | wire of (a). . FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1A, showing the semiconductor light emitting device according to the first embodiment of the present invention. (A) And (b) is a perspective view which shows the semiconductor light-emitting device based on the 1st Embodiment of this invention. (A) And (b) shows the light source device using the semiconductor light-emitting device concerning the 1st Embodiment of this invention, (a) is typical sectional drawing, (b) is typical top view It is. (A) And (b) shows the light source device using the semiconductor light-emitting device concerning the 1st Embodiment of this invention, (a) is typical sectional drawing, (b) is typical top view It is. (A) And (b) shows the semiconductor light-emitting device concerning the 2nd Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the VIb-VIb line | wire of (a). . It is a typical top view which shows the light source device using the semiconductor light-emitting device concerning the 2nd Embodiment of this invention. It is a perspective view which shows the semiconductor light-emitting device concerning the 3rd Embodiment of this invention. It is a perspective view which shows the light source device using the semiconductor light-emitting device concerning the 3rd Embodiment of this invention. It is sectional drawing which shows the semiconductor light-emitting device concerning a 1st prior art example. It is a perspective view which shows the light source device using the semiconductor light-emitting device concerning a 2nd prior art example. It is sectional drawing which shows the light source device using the semiconductor light-emitting device concerning a 2nd prior art example. It is sectional drawing which shows the semiconductor light-emitting device concerning a 3rd prior art example.

(First embodiment)
A semiconductor light emitting device according to a first embodiment of the present invention will be described with reference to FIGS.

  As shown in FIGS. 1 to 3, the semiconductor light emitting device 100 of the first embodiment is roughly composed of a semiconductor light emitting element 110, a stem 120, and a cap 130. The stem 120 includes a base 121, an element mounting base 122 formed on the main surface of the base 121, and a seal ring 127 formed so as to surround the element mounting base 122 on the main surface of the base 121. It is configured. Further, the stem 120 includes, for example, leads 123a and 123b formed so as to penetrate the base 121 and leads 123c formed on the surface of the base 121 opposite to the surface on which the element mounting base 122 is formed. .

  A submount 111 is formed on the element mounting base 122 of the stem 120, and the semiconductor light emitting element 110 is mounted on the submount 111. A cap 130 is formed on the base 121 via the seal ring 127 so as to cover the semiconductor light emitting device 110. The cap 130 includes a cover 131 having an opening 131a and a flange 131b, and a light extraction window 132 formed so as to close the opening 131a. The flange portion 131b of the cap 130 is bonded to the seal ring 127. The light emitting surface of the semiconductor light emitting device 110 is disposed so as to face the opening 131 a of the cap 130. For the submount 111, a ceramic material having high thermal conductivity such as aluminum nitride (AlN) and silicon carbide (SiC) is used. Electrodes (not shown) made of gold (Au) or the like are formed on the surfaces of the semiconductor light emitting device 110 and the submount 111. The semiconductor light emitting device 110 and the submount 111 are electrically connected through these electrodes. Further, the electrode formed on the surface of the submount 111 is connected to the lead 123a by the bonding wire 140a. On the other hand, the electrode formed on the surface of the semiconductor light emitting device 110 is connected to the lead 123b by the bonding wire 140b, and an energization path to the semiconductor light emitting device 110 is secured. When the leads 123a and 123b are connected to an external power source (not shown) and energized, the semiconductor light emitting device 110 can emit light. The light output from the semiconductor light emitting element 110 passes through the light extraction window 132 and is extracted from the opening 131 a of the cap 130 to the outside of the semiconductor light emitting device 100.

  As shown in FIG. 1A, the base 121 of the stem 120 has a quadrangular planar shape as viewed from the main surface side. On the four side surfaces 160a, 161a, 160b and 161b of the base 121, convex portions 150a and 151a and concave portions 150b and 151b, which are fitting portions, are formed, respectively. Here, the dimension is designed so that the convex part 150a and the recessed part 150b may fit each other. For example, when another semiconductor light-emitting device having the same configuration as that of the semiconductor light-emitting device 100 is arranged next to the semiconductor light-emitting device 100 shown in FIG. On the side surface 160b of the device, the convex portion 150a of one device and the concave portion 150b of the other device are fitted to face each other. As a result, the side surface 160a of one device contacts the side surface 160b of the other device. Similarly, on the side surface 161a of one device and the side surface 161b of the other device, the convex portion 151a of one device and the concave portion 151b of the other device are brought into contact with each other.

  The semiconductor light emitting device 110 generates heat together with light when energized. The ratio (power-light conversion efficiency) that the input power to the semiconductor light emitting device 110 is converted into the optical output is usually 50% or less. Most of the electric power that has not been converted into light is emitted from the semiconductor light emitting device 110 as Joule heat. The heat is transmitted to the base 121 via the submount 111 and the element mounting table 122 by heat conduction, and is released to the outside of the semiconductor light emitting device 100. In order to efficiently release the heat generated from the semiconductor light emitting element 110 to the outside of the semiconductor light emitting device 100, the base 121 and the element mounting base 122 constituting the stem 120 are required to have high thermal conductivity. Furthermore, the stem 120 needs to be manufactured in a large amount at a low cost by pressing. For this reason, in addition to thermal conductivity, the stem 120 is required to be easily pressed. As a material that can achieve these, copper (Cu) or an alloy containing copper as a main component, or aluminum (Al) or an alloy containing aluminum as a main component is suitable. In the present invention, oxygen-free copper (OFCu) having a high thermal conductivity is used as the material of the base 121.

  On the other hand, an alloy containing iron such as iron (Fe) -nickel (Ni) alloy, Fe-Ni-cobalt (Co) alloy (Kovar) is used for the cover 131 constituting the cap 130. These materials have characteristics that are close to the thermal expansion coefficient of the optical glass used for the light extraction window 132. In the step of attaching the light extraction window 132 so as to close the opening 131a of the cap 130 using low melting point glass, it is required that the thermal expansion coefficients of both are close. If the thermal expansion coefficients of the two are greatly different, a gap is generated due to thermal strain, and the airtightness that is a function inherent to the cap 130 is impaired. In this embodiment, an Fe—Ni—Co alloy is used for the cover 131 of the cap 130.

  In the assembly process of the semiconductor light emitting device 100, it is easy to use a method of applying an electric current for welding the base 121 of the stem 120 and the cap 130. In order to use this method, it is necessary that the materials of the welded portions are the same or have similar compositions. In the semiconductor light emitting device 100 according to the present invention, since the base 121 uses OFCu, the material is significantly different from the Fe—Ni—Co alloy that is the cover 131 of the cap 130. Therefore, a seal ring 127 made of an Fe—Ni—Co alloy is attached on the main surface of the base 121 by silver brazing. Thereby, the cap 130 can be easily attached to the stem 120 by heat welding by applying an electric current.

  Next, a light source device configured by assembling a plurality of semiconductor light emitting devices according to the first embodiment of the present invention will be described with reference to FIGS. 4 and 5. 4 and 5, the seal ring 127 and the flange portion 131b are omitted.

  As shown in FIGS. 4A and 4B, the respective bases 121 of the plurality of semiconductor light emitting devices 100 constituting the light source device 200 are in contact with each other on their side surfaces. The plurality of semiconductor light emitting devices 100 are two-dimensionally arranged in the same direction. For this reason, the convex part 150a and the recessed part 150b formed in the side surface of the base 121, and the convex part 151a and the recessed part 151b are engaged with each other. As a result, the side surfaces of the bases 121 of the adjacent semiconductor light emitting devices 100 are in contact with each other. Furthermore, since the relative position of each of the plurality of semiconductor light emitting devices 100 is determined by the fitting of the convex portions 150a and 151a and the concave portions 150b and 151b, it is necessary to align each of the plurality of semiconductor light emitting devices 100. Absent. Further, since the bases 121 of the plurality of semiconductor light emitting devices 100 are mechanically connected to each other, all of the bases 121 themselves have a function of a heat sink. In the technique of the third conventional example shown in FIG. 13, a heat radiating plate or the like is necessary. However, in the configuration of this embodiment, a heat radiating plate or the like is not necessary.

  In general, the stem base of a conventional package is often made in a circular shape with a diameter of 5.8 mm. Therefore, in this embodiment, the size of the base 121 of the semiconductor light emitting device 100 is set to 5.8 mm × 5.8 mm for comparison. In the light source device using the conventional semiconductor light emitting device shown in FIGS. 11 and 12, a 1 mm gap is necessary between adjacent semiconductor light emitting devices. As a result, the interval between the light emitting points of the semiconductor light emitting device is 6.8 mm. On the other hand, in the light source device 200 according to the present embodiment, the semiconductor light emitting devices 100 can be arranged in close contact with each other. For this reason, the interval between the light emitting points of the semiconductor light emitting device 100 is 5.8 mm, and mounting with higher density is possible.

  When the light source device 200 is mounted on a device such as a projector, as shown in FIGS. 5A and 5B, the side surface of the base 121 of the semiconductor light emitting device 100 disposed at the peripheral portion of the light source device 200. Is preferably mounted so as to be pressed from the outside to the inside of the light source device 200. Specifically, as shown in FIG. 5B, the mounting plates 210a, 210b, 211a, and 211b, which are fixing members, are arranged so as to face the base 121 that forms the four side surfaces of the peripheral portion of the light source device 200. The light source device 200 is fixed so as to be attached and pressed in the directions of the arrows in the drawing. Thereby, the adhesiveness of the side surfaces of the bases 121 of the plurality of semiconductor light emitting devices 100 constituting the light source device 200 is improved, so that the efficiency of heat conduction between the bases 121 can be improved.

  When the light source device 200 cannot be fixed by the mounting plates 210a, 210b, 211a, and 211b, the side surfaces of the adjacent bases 121 can be bonded together by soldering. However, it is necessary to perform soldering at a temperature that does not exceed the mounting temperature (about 300 ° C.) of the semiconductor light emitting device 110 and the submount 111 on the device mounting base 122. For soldering, it is preferable to use a lead-free solder material such as SnAgCu and SnZnBi. Since each of the plurality of semiconductor light emitting devices 100 constituting the light source device 200 is fixed by such soldering, the mechanical strength of the light source device 200 increases.

  According to the semiconductor light emitting device and the light source device using the same according to the first embodiment of the present invention, the density of the light emitting points of the semiconductor light emitting device can be increased, the number of parts can be reduced, and the semiconductor light emitting device It is possible to efficiently dissipate the generated heat.

(Second Embodiment)
A semiconductor light emitting device according to the second embodiment of the present invention will be described below with reference to FIG. In the present embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted, and only different portions will be described.

  As shown in FIGS. 6A and 6B, the semiconductor light emitting device 300 according to the second embodiment is different in the shape of the base 321 of the stem 320 compared to the first embodiment. Specifically, in this embodiment, the planar shape of the base 321 viewed from the main surface side is a hexagon. Convex portions 350a, 351a, and 352a and concave portions 350b, 351b, and 352b are formed on the six side surfaces of the base 321, respectively. Moreover, the convex part 350a and the recessed part 350b, the convex part 351a and the recessed part 351b, and the convex part 352a and the recessed part 352b are designed so that it may each fit.

  Next, a light source device 400 configured by assembling a plurality of semiconductor light emitting devices 300 according to the second embodiment will be described with reference to FIG. In FIG. 7, the seal ring 127 and the flange portion 131b are omitted.

  As shown in FIG. 7, when a plurality of semiconductor light emitting devices 300 according to the present embodiment are two-dimensionally arranged in the same direction, a convex portion 350a and a concave portion 350b, a convex portion 351a and a concave portion 351b, and a convex portion 352a and a concave portion. 352b can be arranged adjacent to each other. Here, the adjacent convex part and concave part are designed to fit each other. When attention is paid to one semiconductor light-emitting device 300 among the plurality of semiconductor light-emitting devices 300 constituting the light source device 400, other semiconductor light-emitting devices 300 are adjacent to each other in six directions by 60 ° and are arranged periodically.

  According to the semiconductor light emitting device and the light source device using the same according to the second embodiment of the present invention, the density of the light emitting points of the semiconductor light emitting device can be increased, the number of components can be reduced, and the semiconductor light emitting element It is possible to efficiently dissipate the heat generated in. In the present embodiment, the planar shape viewed from the main surface side of the base is a hexagon, but is not limited thereto, and may be a polygon such as a triangle, or a polygon that can be filled in a plane. preferable. Further, the outer shape of the base of the stem of the semiconductor light emitting device may be changed according to conditions such as the purpose and size of the device.

(Third embodiment)
A semiconductor light emitting device according to the third embodiment of the present invention will be described below with reference to FIG. In the present embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, the description thereof is omitted, and only different members are described.

  As shown in FIG. 8, the semiconductor light emitting device 500 according to the third embodiment is different in the shape of the base 521 of the stem 520 from the first embodiment. Specifically, the shapes of the convex portions 550a and 551a and the concave portions 550b and 551b provided on the side surface of the base 521 are trapezoidal. The convex portion 550a and the concave portion 550b and the convex portion 551a and the concave portion 551b have shapes that can be fitted when adjacent to each other. Here, in the convex portion 550a, the width 550a1 of the portion close to the center of the base 521 is smaller than the width 550a2 of the portion close to the outer peripheral portion of the base. That is, the width of the convex portion 550a is smaller as it is closer to the center of the base 521. In the recess 550b, the width 550b1 of the portion near the outer periphery of the base 521 is smaller than the width 550b2 of the portion near the center of the base 521. That is, the width of the concave portion 550b increases as the distance from the center of the base 521 increases. The convex portion 551a and the concave portion 551b have the same dimensional relationship.

  Next, a light source device configured by assembling a plurality of semiconductor light emitting devices 500 according to the third embodiment will be described with reference to FIG.

  As shown in FIG. 9, a light source device 600 is configured by two-dimensionally arranging a plurality of semiconductor light emitting devices 500 according to the third embodiment in the same direction. The plurality of semiconductor light emitting devices 500 constituting the light source device 600 are connected by fitting the side surfaces thereof. Here, on the side surface of the adjacent base 521, the shape of the convex portion and the concave portion is trapezoidal, so that the semiconductor light emitting devices are not separated from each other by pulling in the in-plane direction of the main surface of the base 521.

  According to the semiconductor light emitting device and the light source device using the same according to the third embodiment of the present invention, the density of the light emitting points of the semiconductor light emitting device can be increased, the number of parts can be reduced, and the semiconductor light emitting element can be used. It is possible to efficiently dissipate the generated heat. Furthermore, a light source device with higher self-standing strength can be obtained without using a special mechanical support member.

  The semiconductor light emitting device according to the present invention can increase the density of light emitting points of a plurality of semiconductor light emitting devices, reduce the number of components, and can efficiently dissipate heat generated from the semiconductor light emitting device. It is useful for a semiconductor light emitting device that can be fitted to each other and a light source device using the same.

100, 300, 500 Semiconductor light emitting device 110 Semiconductor light emitting element 111 Submount 120, 320, 520 Stem 121, 321, 521 Base 122 Element mounting base 123a, 123b, 123c Lead 127 Seal ring 130 Cap 131 Cover 131a Opening 131b Flange Part 132 Light extraction window 140a, 140b Bonding wire 150a, 151a, 350a, 351a, 352a, 550a, 551a Convex part (fitting part)
150b, 151b, 350b, 351b, 352b, 550b, 551b Recessed portion (fitting portion)
160a Base side surface 160b Base side surface 161a Base side surface 162b Base side surface 200, 400, 600 Light source device 210a, 210b, 211c, 211d Mounting plate (fixing member)

Claims (6)

A semiconductor light emitting device capable of emitting light using a semiconductor material,
The plane shape of the main surface is polygonal, a base made of metal,
A semiconductor light emitting element mounted on the main surface of the base,
2. The semiconductor light emitting device according to claim 1, wherein the base has a fitting portion on a side surface of the base that can be fitted to a base of another semiconductor light emitting device having the same configuration as the semiconductor light emitting device. The fitting portion includes a concave portion and a convex portion formed on the side surface of the base.
When assembling a plurality of the semiconductor light emitting devices, the concave portion in one adjacent semiconductor light emitting device and the convex portion in the other semiconductor light emitting device are fitted, and the convex portion in one semiconductor light emitting device and the concave portion in the other semiconductor light emitting device The semiconductor light emitting device according to claim 1, wherein a plurality of semiconductor light emitting devices are assembled.   The semiconductor light-emitting device according to claim 1, wherein the base is made of a metal containing copper or aluminum as a main component. A plurality of the semiconductor light emitting devices according to any one of claims 1 to 3,
The light source device, wherein the plurality of semiconductor light emitting devices are fitted to each other on a side surface of the base. A fixing member for fixing the plurality of semiconductor light emitting devices;
5. The light source device according to claim 4, wherein a part of the fixing member is formed to be fitted to a side surface of the base of the plurality of semiconductor light emitting devices.   The light source device according to claim 4, wherein the side surfaces of the base are bonded to each other with a solder material.

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