JP2012174912A - Semiconductor device and method of manufacturing same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To seal a semiconductor element and a substrate with a resin containing a filler while a circuit part is properly protected in a simplified step, at the time when an object, in which a semiconductor element containing a circuit part that is vulnerable to stress is mounted on a substrate, is sealed with a mold material comprising the resin containing filler.SOLUTION: The method of manufacturing a semiconductor device includes a structure arrangement step in which a structure 1 where a semiconductor element 20 containing a circuit part 23 on one surface 21 side is mounted on a substrate 10 is arranged in a metal mold 100, and then a molding step in which a resin 30 containing an insulating filler 31 is packed in the metal mold 100. In the structure arrangement step, a gap regulating means 101 for regulating a gap 200 having a size with which the resin 30 can enter, with no filler 31 in the resin 30 entering the circuit part 23 is so provided as to surround the circuit part 23 in the metal mold 100. Then in the molding step, packing is made with the resin 30 that contains the filler 31 under the stated condition.

Description

  The present invention relates to a semiconductor device in which a semiconductor element mounted on a substrate is sealed with a molding material, and a method for manufacturing such a semiconductor device.

Conventionally, this type of semiconductor device has a structure in which a semiconductor element is mounted on a substrate with the other side opposite to the one side of the semiconductor element having a circuit portion on one side facing the substrate. Is placed in a mold for resin molding, and then the semiconductor element and the substrate are sealed with the resin by filling the mold with a resin containing an insulating filler as a molding material. (For example, see Patent Document 1)
Here, the mold material contains a filler made of ceramic or the like for the purpose of adjusting the thermal expansion coefficient characteristic of the resin. In addition, a circuit part such as a precision power supply is formed on one surface of the semiconductor element. After the semiconductor element is sealed with a resin, local stress due to the filler contained in the resin affects the element in the circuit part of the semiconductor element. There is a possibility that the characteristics of the circuit section are fluctuated.

  For such problems, conventionally, a protective film made of a relatively soft resin such as a polyimide resin different from the epoxy resin constituting the molding material is attached to one surface of the semiconductor element, and the circuit portion is formed with this protective film. There has been proposed a semiconductor element in which the stress of the filler applied to a circuit portion that is weak against stress is reduced by protection (see, for example, Patent Document 2).

JP 2005-166898 A Japanese Patent Laid-Open No. 9-289269

  However, conventionally, in order to form a protective film that covers the circuit part of the semiconductor element, a protective film is applied on the circuit part of the semiconductor element and cured, followed by sealing with a molding material, that is, a molding step Therefore, the process becomes complicated.

  The present invention has been made in view of the above problems, and is simplified when sealing a semiconductor element having a circuit portion that is vulnerable to stress on a substrate with a molding material made of a resin containing a filler. It is an object of the present invention to seal the semiconductor element and the substrate with a resin containing a filler while appropriately protecting the circuit portion of the semiconductor element in the step.

In order to achieve the above object, in the first aspect of the present invention, the other surface (22) side opposite to the one surface (21) in the semiconductor element (20) having the circuit portion (23) on the one surface (21) side is formed. The structure (1) in which the semiconductor element (20) is mounted on the substrate (10) with the semiconductor element (20) facing the substrate (10) is disposed in the resin molding mold (100). After the placement process,
A mold step for sealing the semiconductor element (20) and the substrate (10) with the resin (30) by filling the resin (30) containing the insulating filler (31) into the mold (100). In the manufacturing method of the semiconductor device manufactured by performing,
In the structure arranging step, the gap defining means (101) that defines the gap (200) in which the filler (31) in the resin (30) does not enter the circuit portion (23) and the resin (30) enters. , 300) is provided so as to surround the circuit part (23) in the mold (100),
Thereafter, in the molding step, the mold (100) is filled with the resin (30) containing the filler (31) in a state where the gap defining means (101, 300) is provided.

  According to this, the semiconductor element (20) and the substrate (10) can be sealed by a single molding step, and the filler (31) is formed on the circuit part (23) which is weak against stress among the semiconductor elements (20). The resin (30) not containing water penetrates and covers and protects the circuit part (23). Since the resin (30) covering the circuit part (23) does not include the filler (31) and is made of a resin material as a molding material, the resin (30) is sealed as a molding material without changing the circuit part characteristics. It has a function.

  Therefore, according to the present invention, the semiconductor element (20) made of the resin (30) containing the filler (31) while appropriately protecting the circuit portion (23) of the semiconductor element (20) in a simplified process. In addition, the substrate (10) can be sealed.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the gap defining means is provided above the one surface (21) of the semiconductor element (20) as a part of the mold (100). To the one surface (21) with a gap (200) facing each other (101), and the facing portion (101) is movable in a direction orthogonal to one surface (21) of the semiconductor element (20) And
In the molding process, after covering the circuit portion (23) with the resin (30) that has entered the circuit portion (23) from the gap (200), the opposing portion (101) is pulled up to contain the filler (31). The filling of the mold (100) with (30) is continued, and the resin (30) covering the circuit part (23) is further covered with the resin (30) containing the filler (31).

  According to this, the circuit part (23) is appropriately covered with the resin (30) not including the filler (31), and the resin (30) containing the filler (31) is disposed thereon and sealed. However, in this case, since the resin (30) serving as the protective film of the circuit portion (23) and the resin (30) covering the protective film are the same resin material, Compared to the case of using different resin materials for the mold material, the adhesiveness between these two materials is excellent, and peeling can be prevented.

Furthermore, in the invention according to claim 3, in the method of manufacturing a semiconductor device according to claim 2, in the molding step, the facing portion (101) is moved from the portion of the mold (100) other than the facing portion (101). Set the temperature as high as
In this state, after covering the circuit part (23) with the resin (30) that has entered the circuit part (23) from the gap (200), the opposing part (101) is pulled up, and the resin containing the filler (31) ( 30) The mold (100) is continuously filled.

  According to this, after the resin (30) that enters the circuit part (23) through the gap (200) and covers the circuit part (23) is semi-cured or cured first, the resin (30) is contained on the resin (30). Since it becomes easy to prevent the filler (31) from entering and mixing into the resin (30) covering the circuit portion (23), it is preferable.

  According to a fourth aspect of the present invention, in the semiconductor device manufacturing method according to any one of the first to third aspects, the facing portion (101) is a peripheral portion (102) of the facing portion (101). ) Is a part facing the one surface (21) of the semiconductor element (20) with a gap (200), and the part (103) inside the peripheral part (102) is more than the peripheral part (102). It is characterized by being a recessed part.

  According to this, it is easy to ensure the thickness of the resin (30) that enters from the gap (200) and covers the circuit portion (23), that is, the resin (30) that becomes the protective film.

  Further, as in the invention described in claim 5, in the method of manufacturing a semiconductor device according to claim 1, the gap defining means includes one surface (21) of the semiconductor element (20) so as to cover the circuit portion (23). ), And the mesh opening may be a mesh member (300) constituting the gap (200).

  In this case, it is sufficient to provide a gap defining means on the semiconductor element (20) side in advance, and thereafter perform resin sealing using a normal mold, so that it can be applied to a general molding process without changing the mold. There is an advantage.

  Furthermore, in the invention described in claim 6, in the method for manufacturing a semiconductor device according to claim 5, the mesh member is a plurality of bonding wires connected in a mesh pattern to one surface (21) of the semiconductor element (20). (300).

  According to this, since the mesh member (300) as the gap defining means can be formed by wire bonding normally performed on the semiconductor element (20), simplification of the process is expected.

  According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor device according to any one of the first to sixth aspects, the gap (200) defined by the gap defining means (101, 300) is a filler. It is smaller than the average particle diameter of (31). Accordingly, it is preferable for preventing the filler (31) from entering.

In invention of Claim 8, it has a board | substrate (10) and a circuit part (23) in the one surface (21) side, and the other surface (22) side opposite to the one surface (21) is a board | substrate (10). A semiconductor element () mounted on the substrate (10) in a state of being opposed to each other, and a resin (30) containing an insulating filler (31) that seals the semiconductor element (20) and the substrate (10) In a semiconductor device comprising:
In the semiconductor element (20), the circuit part (23) is covered with the resin (30), and the filler (31) of the resin (30) is distributed outside the region (30a) around the circuit part (23). It is characterized by.

  The semiconductor device of the present invention is appropriately manufactured by the manufacturing method of claim 1 and has the same effect as that of claim 1.

Further, as in the ninth aspect of the invention, in the semiconductor device according to the eighth aspect, an opening portion (21) smaller than the average particle diameter of the filler (31) is formed on one surface (21) of the semiconductor element (20). 200) and a mesh member (300) having a shape protruding in a direction away from the circuit portion (23) is provided so as to cover the circuit portion (23), and the mesh member (300) The opening is a gap (200),
It is assumed that the predetermined region (30a) is partitioned by the mesh member (300) so that the inside of the mesh member (300) is a predetermined region (30a) on the circuit part (23) of the resin (30). Also good.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

(A) is a schematic sectional drawing of the semiconductor device which concerns on 1st Embodiment of this invention, (b) is a top view schematic plan view of (a). It is process drawing which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment. FIG. 3 is a process diagram illustrating a manufacturing method subsequent to FIG. 2. It is a figure which shows the other example of the opposing part of 1st Embodiment. It is process drawing which shows the manufacturing method of the semiconductor device which concerns on 2nd Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device of 2nd Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
1A and 1B are diagrams showing a schematic configuration of a semiconductor device according to a first embodiment of the present invention, in which FIG. 1A is a schematic cross-sectional view, and FIG. 1B is a schematic top plan view of FIG. In the plan view shown in FIG. 1B, the outer shape of the resin 30 that is a molding material is indicated by a one-dot chain line, and the components that pass through the resin 30 and are located inside the resin 30 are shown.

  The semiconductor device according to the present embodiment is roughly arranged on the substrate 10 with the substrate 10 and the circuit portion 23 on the one surface 21 side, and the other surface 22 side opposite to the one surface 21 facing the substrate 10. A semiconductor element 20 mounted thereon and a resin 30 as a molding material for sealing the semiconductor element 20 and the substrate 10 are provided.

  The substrate 10 is composed of, for example, an island of a lead frame, a heat sink, a wiring substrate, and the like. Here, the substrate 10 has a rectangular plate shape.

  The semiconductor element 20 is made of a silicon semiconductor or the like and is formed by a general semiconductor process. Here, the semiconductor element 20 has a circuit portion 23 on one surface 21 side which is one plate surface, and a die mount material (not shown) in a state where the other surface 22 side which is the other plate surface faces the substrate 10. For example, it is mounted on the substrate 10 and fixed.

  Specifically, the semiconductor element 20 is a sensor chip such as an IC chip or a pressure sensor element, and the circuit unit 23 is a sensing unit such as a precision power source or a diaphragm. The circuit portion 23 is a portion that is vulnerable to stress in the semiconductor element 20, and the characteristics of the circuit portion are likely to fluctuate due to stress application.

  A lead terminal 40 configured as a lead portion of a lead frame or the like is provided outside the semiconductor element 20. The lead terminal 40 is connected to the semiconductor element 20 and the substrate 10 by, for example, wire bonding (not shown), and electrical exchange between the semiconductor element 20 and the outside is performed via the lead terminal 40. ing.

  The resin 30 as a molding material seals the inner leads of the lead terminals 40 together with the semiconductor element 20 and the substrate 10. The resin 30 as the mold material is a resin made of an epoxy resin or the like containing an insulating filler 31 as in the case of a general mold material.

  Examples of such filler 31 include silica, alumina, and alumina nitride. The shape of the filler 31 is, for example, spherical or flaky, and the average particle size is, for example, about several tens of μm.

  Here, the resin 30 as the molding material is such that the filler 31 is distributed over the entire surface except for the predetermined region 30 a on the circuit portion 23 on the one surface 21 of the semiconductor element 20. Here, the predetermined region 30a on the circuit unit 23 is not a whole region directly above the circuit unit 23 but a partial region from the circuit unit 23 to a predetermined height. The predetermined height means that after the semiconductor element 20 is sealed with the resin 30, local stress due to the filler 31 contained in the resin 30 hardly affects the elements in the circuit portion 23 of the semiconductor element 20, and the circuit due to the local stress is It is only necessary to have a distance that can suppress fluctuations in the part characteristics.

  That is, the predetermined region 30a, in other words, the region 30a around the circuit unit 23 is a region of a resin 30a that does not contain a filler (hereinafter referred to as filler-free resin) 30a, and serves as a protective film that covers and protects the circuit unit 23. This is the region of the filler-free resin 30a. The circuit portion 23 is covered with a filler-free resin 30a, and further, the circuit portion 23 is sealed with a resin 30 as a molding material.

  Next, a method for manufacturing this semiconductor device will be described with reference to FIGS. 2 and 3 are process diagrams showing the present manufacturing method. FIGS. 2 (a), 2 (c), and 3 show the workpiece in cross-section, and FIG. 2 (b) is shown in FIG. 2 (a). It is a schematic plan view of the opposing part 101 of.

  First, as shown in FIG. 2A, the structure 1 in which the semiconductor element 20 is mounted on the substrate 10 is formed with the other surface 22 side of the semiconductor element 20 facing the substrate 10. In this structure 1, the lead terminal 40 and the substrate 10 are integrated by a connecting portion such as a suspension lead or caulking, and the lead terminal 40 and the substrate 10 are connected by a bonding wire (not shown). .

  Then, in the structure arranging step shown in FIG. 2A, the structure 1 is arranged in the mold 100 for resin molding. The mold 100 is made of an iron-based metal or the like. Basically, an upper mold and a lower mold used in a general transfer mold method are matched, and a cavity filled with a resin 30 is placed between the upper and lower molds. Is formed.

  Further, the mold 100 of the present embodiment is provided with a gap defining means 101 provided so as to surround the circuit unit 23 in the mold 100. The gap defining means 101 defines a gap 200 having such a size that the filler 31 in the resin 30 as the molding material does not enter the circuit portion 23 and the resin 30 enters.

  Here, the gap defining means is a facing portion 101 that faces the one surface 21 with a gap 200 from above the one surface 21 of the semiconductor element 20 as a part of the mold 100, and the facing portion 101 is a semiconductor element. 20 can be moved in the orthogonal direction to one surface 21, that is, can be moved up and down toward the one surface 21.

  Specifically, the facing portion 101 is a nesting made of an iron-based metal or the like, and is slidably inserted into a hole provided in the upper mold of the mold 100. It can be moved in the vertical direction in FIG. 2 by an actuator or the like.

  The planar size of the portion of the facing portion 101 facing the one surface 21 of the semiconductor element 20 is larger than the planar size of the circuit portion 23. In the structure 1 that has been installed in the mold 100, the facing portion 101 is positioned so as to protrude from the entire outer portion of the circuit portion 23 in a state where the facing portion 101 faces the one surface 21 of the semiconductor element 20. It has become.

  Here, the facing portion 101 is a portion where the peripheral portion 102 of the facing portion 101 faces the one surface 21 of the semiconductor element 20 with the gap 200, and is a portion 103 inside the peripheral portion 102. Is a portion recessed from the peripheral portion 102.

  Here, as shown in FIGS. 2A and 2B, the facing portion 101 has a rectangular shape whose peripheral portion 102 forms a rectangular frame shape. The frame width of the peripheral portion 102 is preferably as thin as possible, and the inner portion 103 only needs to be recessed by 10 μm or more from the peripheral portion 102, for example.

  In the structure arranging step, the facing portion 101 as the gap defining means is provided so as to surround the circuit portion 23 in the mold 100. Specifically, the structure 1 is installed in the mold 100, and the facing portion 101 is lowered toward the one surface 21 of the semiconductor element 20.

  Here, after the peripheral portion 102 of the facing portion 101 is once brought into contact with the one surface 21 of the semiconductor element 20, the facing portion 101 is raised by the gap 200 to thereby raise the one surface 21 of the semiconductor element 20 and the facing portion 101. The gap 200 is defined between the two.

  At this time, the mold 100 and the facing portion 101 are made of an iron-based metal or the like, but the portion to be applied to the semiconductor element 20, specifically, the peripheral portion 102 is coated with a heat resistant resin such as polyimide resin. Also good. As a result, damage to the semiconductor element 20 when the facing portion 101 hits the semiconductor element 20 can be reduced.

  Here, the gap 200 has such a size that the filler 31 in the resin 30 as the molding material does not enter the circuit portion 23 and the resin 30 enters, but the average particle size of the filler 31 (for example, several tens of μm). ) Set as follows.

  Even if the gap 200 is larger than the average particle diameter of the filler 31, the filler 31 is not in a bare state but is encased in the resin 30, so even if the gap 200 is slightly larger than the average particle diameter of the filler 31. It is easy to become a thing which does not enter substantially.

  Thereafter, in the molding process shown in FIGS. 2C and 3, the mold 100 is filled with a resin 30 as a molding material containing the filler 31 in a state where the facing portion 101 is provided. The semiconductor element 20 and the substrate 10 are sealed with the resin 30.

  In this molding process, the position of the gate for injecting the resin 30 as the molding material may be any position on the mold 100. As shown in FIG. 2C, when the resin 30 is injected and reaches the facing portion 101, the filler 31 in the resin 30 does not enter the gap 200, and only the resin 30 not including the filler 31 has the gap 200. Is injected onto the circuit portion 23.

  And after covering the circuit part 23 with the resin 30 which penetrate | invaded the circuit part 23 from the clearance gap 200, as FIG. 3 shows, the opposing part 101 is pulled up to the metal mold | die 100 of the resin 30 containing the filler 31. The resin 30 covering the circuit portion 23 (corresponding to the filler-free resin 30a) is further covered with a resin 30 as a molding material containing the filler 31.

  Here, in FIG. 3, both the peripheral portion 102 and the inner portion 103 of the raised facing portion 101 are located on the same plane as the inner surface of the cavity. This is because the inner portion 103 and the peripheral portion 102 are separated from each other. It can be easily realized by configuring as a slidable one. Note that the inner portion 103 and the peripheral portion 102 may be integrated as the facing portion 101. In this case, the inner portion 103 remains recessed from the peripheral portion 102 in the state of FIG. May be.

  Also in this embodiment, since the mold 100 is set to have a temperature equal to or higher than the curing temperature of the resin 30 as in the general molding process, the curing of the entire resin 30 proceeds after the filling of the resin 30 is completed. With the completion of the curing, that is, the completion of the molding process, the semiconductor device of this embodiment shown in FIG. 1 is completed.

  By the way, according to the present embodiment, the semiconductor element 20 and the substrate 10 can be sealed by a single molding process, and the resin 30 does not include the filler 31 on the circuit portion 23 that is vulnerable to stress among the semiconductor elements 20. (Corresponding to the filler-free resin 30a) enters and covers and protects the circuit portion 23.

  Since the resin 30 covering the circuit portion 23 does not include the filler 31 and is made of a resin material as a molding material, the resin 30 has a sealing function as a molding material without changing the circuit portion characteristics. .

  Therefore, according to the present embodiment, the circuit part 23 of the semiconductor element 20 can be appropriately formed in a simplified process without separately performing a process such as coating for forming a protective film of the circuit part as in the prior art. The semiconductor element 20 and the substrate 10 can be sealed with the resin 30 containing the filler 31 while protecting.

  Further, in the above manufacturing method, after covering the circuit portion 23 with the resin 30 that has entered from the gap 200, the facing portion 101 is pulled up, and the resin 30 that covers the circuit portion 23 is further replaced with the resin 30 containing the filler 31. It is covered.

  In this case, since the resin 30 serving as the protective film of the circuit portion 23 and the resin 30 covering the protective film are the same resin material, different resin materials are used for the protective film and the molding material as in the past. Compared with the case where it does, it is excellent in the adhesiveness of both, and peeling prevention is attained.

  In the above manufacturing method, in the molding step, the facing portion 101 is set to a temperature higher than that of the mold 100 other than the facing portion 101, and in this state, the circuit is formed by the resin 30 that has entered the circuit portion 23 from the gap 200. After covering the part 23, the facing part 101 may be pulled up to continue filling the mold 100 with the resin 30 containing the filler 31.

  According to this, the resin 30 that enters the circuit part 23 through the gap 200 and covers the circuit part 23 is first semi-cured or cured, and then the resin 30 containing the filler 31 is coated thereon. It becomes easy to prevent the filler 31 from entering and mixing into the resin 30 covering the circuit portion 23.

  Here, the mold 100 is heated to a predetermined temperature by an energizing heater or the like, as in a normal case, but here, for example, the opposing portion 101 is replaced with a portion of the mold 100 other than that. Has another energizing heater, and the opposing portion 101 may be heated with a larger current than the other.

  For example, as in a general molding process, the mold 100 is set to a temperature (for example, about 180 ° C.) that is equal to or higher than the curing temperature of the resin 30 (for example, about 150 ° C. for epoxy resin). For example, about 190 ° C.).

  Further, in order to suppress the escape of heat from the facing portion 101, a heat insulating member may be interposed between the facing portion 101 and the hole in the mold 100 portion into which the facing portion 101 is inserted. For example, a film made of a heat resistant resin such as polyimide may be provided on the outer surface of the facing portion 101 or the inner surface of the hole.

  Of course, when the above-described mixing of the fillers 31 is unlikely to occur due to conditions such as the viscosity of the resin 30, the facing portion 101 and the other mold 100 portions may be set to the same temperature.

  In addition, as described above, the facing portion 101 has the peripheral portion 102 that defines the gap 200 and the recessed portion 103 inside thereof, so that the resin 30 that enters the gap 200 and covers the circuit portion 23, that is, protection. It becomes easy to secure the thickness of the filler-free resin 30a to be a film.

  In FIG. 2, the facing portion 101 is a square-shaped facing portion in which the peripheral portion 102 forms a rectangular frame shape, but the peripheral portion 102 is circular as shown in FIG. A so-called donut-shaped facing portion 101 may be used. Further, as shown in FIG. 4B, the opposing portion 101 may be an integral flat surface in both the peripheral portion and the inner portion. In any case, the facing portion 101 can define the gap 200 and has a plane size that allows the circuit portion 23 to enter the inner periphery thereof.

  Further, unlike the above manufacturing method, after the circuit part 23 is covered with the resin 30 that has entered the circuit part 23 from the gap 200, the mold 100 of the resin 30 containing the filler 31 as it is without lifting the facing part 101. The filling and curing of the resin 30 may be completed.

  In this case, in the completed semiconductor device, a concave portion is formed in the shape of the facing portion 101 in the resin 30, but the circuit portion 23 is protected and sealed by the filler-free resin 30 a at the bottom of the concave portion. It has been done and there is no problem.

(Second Embodiment)
FIGS. 5A and 5B are process diagrams showing a method of manufacturing a semiconductor device according to the second embodiment of the present invention, wherein FIGS. 5A and 5C show a workpiece in cross section, and FIG. 2 is a schematic plan view of one surface 21 of the semiconductor element 20 of FIG. This embodiment is different from the manufacturing method of the first embodiment in that the gap defining means 300 is provided on the semiconductor element 20 side of the structure 1 in advance, and here, the difference is mainly described. It will be described in the following.

  As shown in FIG. 5A, in the present embodiment, the filler 31 in the resin 30 as the molding material does not enter the circuit portion 23 and the gap that defines the gap 200 having a size that allows the resin 30 to enter. The defining means 300 is provided so as to surround the circuit portion 23 on the one surface 21 of the semiconductor element 20 in the structure 1.

  Here, as shown in FIG. 5B, the gap defining means 300 is fixed to the one surface 21 of the semiconductor element 20 so as to cover the circuit portion 23, has a mesh shape, and the opening portion of the mesh has a gap 200. It is the mesh member 300 which comprises. In FIG. 5B, the surface of the circuit portion 23 is point-hatched for identification.

  Specifically, the mesh member is composed of a plurality of bonding wires 300 connected to the one surface 21 of the semiconductor element 20 in a mesh pattern. These bonding wires 300 can be easily formed by ordinary gold or aluminum wire bonding.

  And in the manufacturing method of this embodiment, the structure 1 in which the mesh member 300 was previously formed is installed in the mold 100. The mold 100 in this case may be a general one that does not have the facing portion 101.

  In the structure arranging step of the present embodiment, the mesh member 300 as the gap defining means is provided so as to surround the circuit portion 23 in the mold 100 simply by installing the structure 1 in the mold 100 as described above. State.

  Thereafter, as shown in FIG. 5C, in the molding step of the present embodiment, the mold 30 is filled with the resin 30 containing the filler 31 in a state where the mesh member 300 is provided. 20 and the substrate 10 are sealed with a resin 30. At this time, the filler 31 does not enter the circuit portion 23 from the opening 200 of the mesh member 300, that is, the gap 200, and only the resin 30 enters.

  Therefore, also in this embodiment, the circuit part 23 is covered with a filler-free resin, and the top thereof is further sealed with a resin 30 containing a filler 31. Also in this manufacturing method, a semiconductor device is completed upon completion of filling and curing of the resin 30, that is, completion of the molding process.

  Thus, according to the manufacturing method of the present embodiment, the mesh member 300 as the gap defining means is provided in advance on the semiconductor element 20 side, and thereafter, resin sealing using the normal mold 100 may be performed. There is an advantage that it can be applied to a general molding process without changing the mold 100.

  Further, by forming the mesh member 300 with the bonding wire 300, the mesh member 300 as the gap defining means can be formed by wire bonding normally performed on the semiconductor element 20, so that simplification of the process is expected. . In addition to the bonding wire 300, for example, a wire mesh such as a tea strainer may be bonded to the one surface 21 of the semiconductor element 20 as the mesh member of the present embodiment.

  Here, FIG. 6 is a diagram showing a schematic cross-sectional configuration of the semiconductor device of the present embodiment completed by the above manufacturing method. The semiconductor device is the same as the semiconductor device of FIG. 1 except that the mesh member 300 remains in the resin 30 and is sealed.

  Also in this semiconductor device, the filler 30 is distributed throughout the resin 30 except for a predetermined region 30a (corresponding to the filler-free resin 30a) on the circuit portion 23 on the one surface 21 of the semiconductor element 20.

  Here, it is desirable that the mesh member 300 has a mesh shape having an opening 200 as a gap smaller than the average particle diameter of the filler 31. The mesh member 300 has a shape that protrudes in a direction away from the circuit portion 23 on the one surface 21 of the semiconductor element 20, specifically a substantially dome shape, and is provided so as to cover the circuit portion 23. It has been.

  The inside of the mesh member 300 is a predetermined region 30 a on the circuit portion 23 of the resin 30, that is, the filler-free resin 30 a, and the outside of the mesh member 300 is the resin 30 containing the filler 31. That is, the predetermined region 30 a of the resin 30 is partitioned by the mesh member 300.

DESCRIPTION OF SYMBOLS 1 Structure 10 Board | substrate 20 Semiconductor element 21 One surface of a semiconductor element 22 The other surface of a semiconductor element 23 Circuit part 30 Resin 30a Predetermined area | region equivalent to a resin containing no filler 31 Filler 100 Mold 101 Opposite part as gap defining means 102 Opposite part 103 of the inner part of the peripheral part in the opposite part 300 A mesh member as a gap defining means

Claims (9)

In the semiconductor element (20) having the circuit part (23) on the one surface (21) side, the other surface (22) side opposite to the one surface (21) is opposed to the substrate (10). After the structure placing step of placing the structure (1) formed by mounting (20) on the substrate (10) in the mold (100) for resin molding,
The semiconductor element (20) and the substrate (10) are sealed with the resin (30) by filling the mold (100) with a resin (30) containing an insulating filler (31). In a method for manufacturing a semiconductor device manufactured by performing a molding process,
In the structure arranging step, the filler (31) in the resin (30) does not enter the circuit portion (23), and the resin (30) defines a gap (200) that is large enough to enter. The gap defining means (101, 300) is provided so as to surround the circuit portion (23) in the mold (100),
Thereafter, in the molding step, the mold (100) is filled with the resin (30) containing the filler (31) in a state where the gap defining means (101, 300) is provided. A method for manufacturing a semiconductor device. The gap defining means is a facing portion facing the one surface (21) and the gap (200) from above the one surface (21) of the semiconductor element (20) as a part of the mold (100). (101)
The facing portion (101) is movable in a direction orthogonal to the one surface (21) of the semiconductor element (20),
In the molding step, the resin part (30) that has entered the circuit part (23) from the gap (200) is covered with the circuit part (23), and then the opposing part (101) is pulled up to form the filler. Filling the mold (100) with the resin (30) containing (31), the resin (30) covering the circuit part (23), and further containing the filler (31) The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is covered with a resin (30). In the molding step, the facing portion (101) is set to a temperature higher than that of the mold (100) other than the facing portion (101),
In this state, after covering the circuit portion (23) with the resin (30) that has entered the circuit portion (23) from the gap (200), the facing portion (101) is pulled up to fill the filler (31 3. The method of manufacturing a semiconductor device according to claim 2, wherein the mold (100) is continuously filled with the resin (30) containing the resin (30).   The facing portion (101) is a portion where the peripheral portion (102) of the facing portion (101) faces the one surface (21) of the semiconductor element (20) with the gap (200). The part (103) inside the peripheral part (102) is a part recessed from the peripheral part (102). The manufacturing method of the semiconductor device as described in any one of Claims 1-3.   The gap defining means is fixed to the one surface (21) of the semiconductor element (20) so as to cover the circuit portion (23), has a mesh shape, and the opening portion of the mesh constitutes the gap (200). The method of manufacturing a semiconductor device according to claim 1, wherein the mesh member is a mesh member.   6. The method of manufacturing a semiconductor device according to claim 5, wherein the mesh member includes a plurality of bonding wires (300) connected in a mesh pattern to the one surface (21) of the semiconductor element (20). .   The gap (200) defined by the gap defining means (101, 300) is smaller than the average particle diameter of the filler (31), and the gap (200) is any one of claims 1 to 6. The manufacturing method of the semiconductor device as described in any one of Claims 1-3. A substrate (10);
A circuit part (23) is provided on one surface (21) side, and the other surface (22) side opposite to the one surface (21) is opposed to the substrate (10). Mounted semiconductor element (),
In a semiconductor device comprising: a resin (30) containing an insulating filler (31) for sealing the semiconductor element (20) and the substrate (10);
In the semiconductor element (20), the circuit portion (23) is covered with the resin (30), and the filler (31) of the resin (30) is formed in a region (30a) around the circuit portion (23). ) A semiconductor device characterized by being distributed outside. The one surface (21) of the semiconductor element (20) has a mesh shape having openings (200) smaller than the average particle diameter of the filler (31), and is away from the circuit portion (23). A mesh member (300) having a convex shape is provided so as to cover the circuit portion (23),
The opening of the mesh member (300) is the gap (200);
The predetermined region (30a) is partitioned by the mesh member (300) so that the inside of the mesh member (300) is a predetermined region (30a) on the circuit part (23) of the resin (30). The semiconductor device according to claim 8.

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