JP2012158833A5 - - Google Patents

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Publication number
JP2012158833A5
JP2012158833A5 JP2012014799A JP2012014799A JP2012158833A5 JP 2012158833 A5 JP2012158833 A5 JP 2012158833A5 JP 2012014799 A JP2012014799 A JP 2012014799A JP 2012014799 A JP2012014799 A JP 2012014799A JP 2012158833 A5 JP2012158833 A5 JP 2012158833A5
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JP
Japan
Prior art keywords
precursor gas
substrate
ion beam
gallium
tin
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JP2012014799A
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English (en)
Japanese (ja)
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JP2012158833A (ja
JP5930735B2 (ja
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Publication of JP2012158833A publication Critical patent/JP2012158833A/ja
Publication of JP2012158833A5 publication Critical patent/JP2012158833A5/ja
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Publication of JP5930735B2 publication Critical patent/JP5930735B2/ja
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JP2012014799A 2011-01-31 2012-01-27 低抵抗材料のビーム誘起堆積 Active JP5930735B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161438144P 2011-01-31 2011-01-31
US61/438,144 2011-01-31

Publications (3)

Publication Number Publication Date
JP2012158833A JP2012158833A (ja) 2012-08-23
JP2012158833A5 true JP2012158833A5 (OSRAM) 2015-03-05
JP5930735B2 JP5930735B2 (ja) 2016-06-08

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ID=45528993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012014799A Active JP5930735B2 (ja) 2011-01-31 2012-01-27 低抵抗材料のビーム誘起堆積

Country Status (4)

Country Link
US (2) US9090973B2 (OSRAM)
EP (1) EP2481829A3 (OSRAM)
JP (1) JP5930735B2 (OSRAM)
CN (1) CN102618852B (OSRAM)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10023955B2 (en) 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
CN105200394A (zh) * 2014-06-24 2015-12-30 Fei公司 创建对称fib沉积的方法和系统
US20150369710A1 (en) * 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
US10538844B2 (en) 2015-09-11 2020-01-21 Fei Company Nanofabrication using a new class of electron beam induced surface processing techniques
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
US11261527B2 (en) 2019-08-12 2022-03-01 MEO Engineering Company, Inc. Method and apparatus for precursor gas injection

Family Cites Families (28)

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US4239788A (en) 1979-06-15 1980-12-16 Martin Marietta Corporation Method for the production of semiconductor devices using electron beam delineation
JPS5979426A (ja) * 1982-10-29 1984-05-08 Tdk Corp 磁気記録媒体
JPS61220417A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd 半導体装置の製造方法
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams
US5104684A (en) 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5594245A (en) 1990-10-12 1997-01-14 Hitachi, Ltd. Scanning electron microscope and method for dimension measuring by using the same
JP2962386B2 (ja) * 1993-03-10 1999-10-12 本荘ケミカル株式会社 透明導電性酸化スズ膜の製造方法
WO1996000803A1 (en) * 1994-06-28 1996-01-11 Fei Company Charged particle deposition of electrically insulating films
WO1997038355A1 (en) 1996-04-08 1997-10-16 Micrion Corporation Systems and methods for deposition of dielectric films
TW471122B (en) * 1999-04-22 2002-01-01 Seiko Instr Inc Formation method, lead-line setting correction and forming device of transparent conductive film
US6399944B1 (en) 1999-07-09 2002-06-04 Fei Company Measurement of film thickness by inelastic electron scattering
US6200649B1 (en) 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US6638580B2 (en) * 2000-12-29 2003-10-28 Intel Corporation Apparatus and a method for forming an alloy layer over a substrate using an ion beam
US6492261B2 (en) * 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition
US7504182B2 (en) 2002-09-18 2009-03-17 Fei Company Photolithography mask repair
US7674706B2 (en) 2004-04-13 2010-03-09 Fei Company System for modifying small structures using localized charge transfer mechanism to remove or deposit material
EP1630849B1 (en) 2004-08-27 2011-11-02 Fei Company Localized plasma processing
US8835880B2 (en) 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
EP2109873B1 (en) 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
TWI479570B (zh) 2007-12-26 2015-04-01 奈華科技有限公司 從樣本移除材料之方法及系統
CN102149509B (zh) 2008-07-09 2014-08-20 Fei公司 用于激光加工的方法和设备
EP2151848A1 (en) 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
US8778804B2 (en) 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
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US8524139B2 (en) 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US8617668B2 (en) 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
WO2011060444A2 (en) 2009-11-16 2011-05-19 Fei Company Gas delivery for beam processing systems
EP2402475A1 (en) 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures

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