JP2012156523A - Thin film device feeder, manufacturing method of thin film device feeder, transfer method, manufacturing method of semiconductor device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide technology for simply peeling and transferring a transferred layer to a transfer body having softness or flexibility.SOLUTION: A method for transferring a transferred layer formed on a substrate to the transfer body having softness or flexibility comprises: a first step of forming the transferred layer on the substrate; a second step of joining the transferred layer formed on the substrate with the transfer body having softness or flexibility fixed to a fixing tool; and a third step of peeling the transferred layer from the substrate and transferring it onto the transfer body.

Description

The present invention relates to a thin film element transfer technique, and more particularly, to a transfer method that can be easily peeled and transferred even when a transfer body has flexibility or flexibility, a method for manufacturing a semiconductor device, and an electronic apparatus.

In recent years, regarding the manufacture of thin film devices including thin film elements such as thin film transistors (TFTs) and thin film diodes (TFDs), the thin film elements are transferred from a manufacturer substrate on which the thin film elements are manufactured to, for example, a flexible flexible substrate. Thus, a technique for manufacturing a thin film device having light weight, excellent impact resistance, and flexibility has been studied.

For example, as a method for transferring a thin film element manufactured on a manufacturer's substrate to a flexible substrate, which is a transfer destination substrate, the present applicant manufactures a thin film element on a manufacturer's substrate via a release layer, and transfers this to the transfer destination. A transfer method has been developed in which a peeling method is performed by irradiating the release layer with an irradiation light after being bonded to the substrate, and the manufacturer substrate is released from the thin film element (Japanese Patent Laid-Open No. 10-125).
No. 931).
In addition, the present applicant has developed a transfer method in which a thin film element is primarily transferred to a temporary transfer substrate (primary transfer body) and then further transferred to a transfer destination substrate (secondary transfer body). (JP-A-11-26733, JP-A-2001-189460).

According to these transfer methods, after manufacturing a thin film element that requires a high-temperature process and strict processing accuracy on a manufacturer substrate that is excellent in heat resistance and shape stability and suitable for manufacturing a thin film element, for example, By transferring onto a lightweight and flexible substrate such as a resin substrate, a flexible thin film device can be manufactured.
Japanese Patent Laid-Open No. 10-125931 JP-A-11-26733 JP 2001-189460 A

However, the flexible thin film device manufactured by using the above-described conventional transfer technology is lightweight and excellent in flexibility, but has a drawback that it is difficult to handle because of its unstable shape. In other words, since the substrate is flexible, the same method as that used to handle conventional glass or silicon wafers is likely to cause a mistake such as dropping when the substrate is held or transported. In particular, when manufacturing a large number of thin film devices divided into a relatively small area of several square millimeters to several square centimeters, each thin film device is handled individually, and inspection and mounting processes are performed quickly. Is very difficult.

Further, when the transfer layer is transferred to a soft transfer body such as a film, it is difficult to peel off. Even when a hard transfer body is used as the temporary transfer substrate (primary transfer body), the transfer destination substrate (secondary transfer body) to be finally transferred is composed of a flexible or flexible material such as a film. However, there is still a problem that it is difficult to separate the primary transfer member from the secondary transfer member to which the transfer layer is bonded.
Further, when the primary transfer member is made of a material that can be removed by etching or the like, there is a problem that selection of the material becomes complicated.

Accordingly, an object of the present invention is to provide a thin film device supply body and a method for manufacturing the same that facilitate the handling of manufacture and shipment even for a thin film device having shape instability.
Another object of the present invention is to provide a technique for peeling and transferring a transfer layer onto a transfer body having flexibility or flexibility.
It is another object of the present invention to provide a method of manufacturing a semiconductor device using such a peeling / transfer technique and an electronic device manufactured by the method.

In order to achieve the above object, a thin film device supply body according to the present invention has a structure in which a thin film device is fixed on a support substrate via a temporary fixing adhesive layer.

According to this configuration, the thin film device can be indirectly handled through the support substrate on which the thin film device is fixed.

Here, the support substrate includes a hard substrate having excellent shape stability, such as glass, quartz, or silicon wafer. Since these substrates are very commonly used in the manufacturing process of semiconductors and liquid crystal displays, they are very easy to handle.

A release layer is preferably formed on the support substrate, and the support substrate is preferably a translucent substrate. Thereby, it is possible to apply light energy that causes the peeling layer or the temporary fixing adhesive layer to peel off or extinguishes (decreases) the adhesive force through the support substrate.

The thin film device preferably has a structure in which a thin film element layer is mounted on a flexible substrate having flexibility. Accordingly, since the flexible thin film device is supported by the support substrate, handling of the thin film to be transferred (thin film device) is facilitated.

The temporary fixing adhesive layer has a function of temporarily fixing the thin film device to the support substrate and a function of removing the thin film device as necessary. As the property of the adhesive layer, a liquid or paste-like precursor may be exerted by curing it using means such as heat curing or photocuring, and a thin film device can be formed by an adhesive force like an adhesive sheet. May be fixed to the support substrate.

The thin film device supply body of the present invention is characterized in that the thin film device is fixed through a release layer and a temporary fixing adhesive layer formed on a support substrate.

According to such a configuration, even if it is difficult to control the adhesive force of the temporary fixing adhesive layer and it is difficult to remove the thin film device from the support substrate with the temporary fixing adhesive layer, the release layer is also a thin film device. The thin film device can be easily peeled off. Thereby,
The selection range of materials that can be used as the temporary fixing adhesive layer can be expanded. As mentioned above,
The thin film device can have a structure in which a thin film element layer is mounted on a flexible substrate having flexibility.

The thin film device supply body manufacturing method of the present invention is a thin film device supply body manufacturing method that bears a thin film device on a support substrate so that the thin film device can be peeled and transferred. A step of fixing the temporary fixing substrate via the first temporary fixing adhesive layer; a step of removing the manufacturer substrate from the thin film element layer; and a permanent adhesive layer on the surface of the thin film element layer from which the manufacturer substrate is removed. A step of bonding a flexible substrate through the substrate, a step of fixing a support substrate to a surface opposite to the surface of the flexible substrate to which the thin film element is bonded, via a second temporary fixing adhesive layer, and the thin film device Removing the temporary fixing substrate from the substrate.

The step of removing the manufacturer substrate from the thin film element layer uses a light-transmitting substrate as the manufacturer substrate, and performs irradiation light from the back side of the substrate on a release layer previously formed on the surface of the substrate, It is preferable to cause interfacial peeling and / or intra-layer peeling in the release layer. Moreover, the said process may remove the said manufacturer board | substrate by grinding and / or etching.

The step of removing the temporary fixing substrate from the thin film element is performed by irradiating or heating the first temporary fixing adhesive layer to significantly reduce or eliminate the adhesive force of the adhesive layer. It is preferable to remove. Further, in this step, the release layer previously formed on the temporarily fixed substrate may be irradiated with light, and interface release and / or intralayer release may be caused in the release layer. The step may be a step of dissolving the first temporary fixing adhesive layer in a solvent.

More preferably, the temporary fixing substrate is a substrate such as glass or quartz (quartz glass) and exhibits translucency.

Further, in the present invention described above, each release layer is preferably made of a material that causes peeling (ablation) when the atomic force or the intermolecular force is lost or reduced by irradiation with light such as a laser beam.

The thin film device supply body manufacturing method according to the present invention further includes fixing the thin film element layer to any one of the support substrate, the temporary fixing substrate, and the manufacturer substrate, and then attaching the thin film element layer to a plurality of regions. It is characterized by comprising the step of dividing into two.

The step of dividing the thin film element layer into a plurality of regions includes a step of forming a groove at a boundary portion of the plurality of regions of the thin film element layer, and a step of dividing the flexible substrate at a boundary portion of the plurality of regions. It is preferable to contain.

The width of the flexible substrate processing region for dividing the flexible substrate at the boundary between the plurality of regions is the width of the groove formed at the boundary between the plurality of thin film element layers and the thin film circuit region in the thin film element layer. Is preferably smaller.

The electronic apparatus of the present invention is configured by mounting a thin film device supplied from the thin film device supply body described above.

In order to solve the above problems, the transfer layer transfer method of the present invention is a method of transferring a transfer layer formed on a substrate to a transfer body having flexibility or flexibility, and the substrate A first step of forming a transfer layer thereon, a second step of joining the transfer layer formed on the substrate to a flexible or flexible transfer body fixed to a fixture, and the substrate And a third step of peeling and transferring the transfer layer onto the transfer body.

According to this, by fixing the flexible or flexible transfer body to the fixture, it becomes possible to apply a uniform force to the substrate and the transfer body when peeling, so the substrate can be simply Can be peeled off from the transfer body to which the transfer layer is bonded. This transfer layer transfer method is used, for example, in the manufacture of thin film semiconductor devices, the manufacturing method of sheet-like electro-optical devices, the manufacturing method of electronic equipment, and the like.

Another aspect of the present invention is a method of transferring a transfer layer formed on a substrate to a transfer body having flexibility or flexibility, and a first step of forming the transfer layer on the substrate. The substrate was transferred to the primary transfer member, the second step of bonding the transfer target layer to the primary transfer member, the third step of peeling and transferring the transfer target layer from the substrate to the primary transfer member, and the primary transfer member. A fourth step of bonding the transferred layer to a flexible or flexible secondary transfer body fixed to a fixture; and peeling and transferring the transferred layer from the primary transfer body to the secondary transfer body. And a fifth step.

According to this, even when the transfer is performed twice, even if the secondary transfer body to be finally transferred (second time) has flexibility or flexibility, the secondary transfer body By fixing to the fixing tool, the primary transfer body can be easily peeled from the secondary transfer body to which the transfer layer is bonded.

Still another embodiment of the present invention is a method for transferring a transfer layer formed on a substrate to a transfer body having flexibility or flexibility, and a first step of forming the transfer layer on the substrate. A second step of bonding the substrate to a primary transfer member having flexibility or flexibility fixed to a fixture via the transfer layer; and transferring the transfer layer from the substrate to the primary transfer member. A third step of peeling and transferring; a fourth step of joining the transferred layer transferred to the primary transfer body to a flexible or flexible secondary transfer body fixed to a fixture; and the primary transfer. And a fifth step of peeling and transferring the transfer layer from the body to the secondary transfer body.

According to this, even when both the primary transfer body that temporarily transfers the transfer layer and the secondary transfer body that is the final transfer body have flexibility or flexibility, the primary transfer is possible. By fixing the fixture to both the body and the secondary transfer body, the transfer layer can be easily transferred.

For example, an auxiliary substrate is used as the fixture.
Examples of the transfer layer include thin film devices such as thin film transistors.

Another aspect of the present invention provides a method for manufacturing a semiconductor device using the transfer method. According to this, since the above transfer method is used, it is possible to easily perform the peeling transfer, and it is possible to improve the productivity of the semiconductor device. Therefore, the price of the semiconductor device can be reduced.

Another embodiment of the present invention is an electronic device using the semiconductor device obtained by the above manufacturing method. According to this, an inexpensive electronic device can be provided.

In an embodiment of the present invention, a thin film element layer on which a TFT (thin film transistor) circuit or the like is formed by a transfer transfer method is transferred to a flexible substrate in a manufacturing process of an electronic device such as an electro-optical device using the flexible substrate. . At this time, a flexible substrate that is difficult to handle and a support substrate with high mechanical strength (
Alternatively, by fixing and supporting the fixing tool, it is possible to avoid bending of the flexible substrate during the process, thereby improving the accuracy of the peeling transfer and facilitating the handling of the peeling thin film.

Example 1
FIG. 1 shows a thin film device supply body according to a first embodiment of the present invention. As shown in the figure, the thin film device supply body of this embodiment forms a thin film device 30 on one side (upper surface) of a support substrate 10 with a first temporary fixing adhesive layer 20 interposed therebetween.

The support substrate 10 is used to stably place a thin film device. In addition to quartz glass, glass such as soda glass, Corning 7059 (trade name), Nippon Electric Glass OA-2 (trade name), or other heat-resistant glass is used. A silicon wafer or the like is used. These substrates are hard and have excellent shape stability.

The support substrate 10 is preferably a light-transmitting substrate in order to apply light energy (or heat) to the temporary fixing adhesive layer 20 from the back surface 9 side.

It is desirable that the temporary fixing adhesive layer 20 has a characteristic that the adhesive force is significantly reduced or eliminated by light irradiation or heating.

As a property of the temporary fixing adhesive layer 20, a material that exhibits an adhesive force by curing a liquid or paste-like precursor using means such as thermosetting or photocuring can be used. The thin film device may be fixed to the support substrate by an adhesive force like an adhesive sheet.

The temporary fixing adhesive layer 20 is formed for various purposes. For example, a protective film for physically or chemically protecting a thin film element (or thin film element layer) 35 to be described later at the time of manufacture or use, a conductive layer, a light-shielding layer or a reflective layer of the irradiation light 70, or a thin film element 35. Thin film element 35
Among the functions as a barrier layer that prevents the migration of components from the above, those that exhibit at least one of them.

The thin film device 30 includes a thin film transistor (TFT), a diode, a light emitting element, an optical element,
A thin film circuit or a thin film device configured by various detection elements, capacitors, resistors, inductors, wirings, electrodes, insulators, etc. and exhibiting a certain function, the thin film element described above, and the like are applicable.

With such a configuration, the support substrate 10 having required physical and mechanical strength.
It becomes possible to handle the thin film device 30 indirectly via the.

The thin film device 30 is, for example, attached to a transfer target body (transfer destination substrate) (not shown) while being placed on the support substrate 10 with a permanent adhesive, and then temporarily fixed adhesive layer in the transfer target region by laser light irradiation or the like. When the adhesive force of 20 is extinguished, it is peeled from the support substrate 10 and can be moved (peeled and transferred) to the transfer object.

(Example 2)
FIG. 2 shows a second embodiment of the present invention. In the figure, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

In the thin film device supply body of this embodiment, the support substrate 10 has a first release layer 15. A thin film device 30 is formed on the upper surface of the release layer 15 (the surface not in contact with the support substrate 10) via the temporary fixing adhesive layer 20. That is, the release layer 15 and the temporary fixing adhesive layer 20 are interposed between the support substrate 10 and the thin film device 30. As will be described later, an amorphous silicon layer or the like can be used as the release layer 15. For example, when energy is given by laser light, the release layer 15 loses the bonding force between atoms and molecules. As a result, release layer 1
5, peeling (destruction) occurs at the interface 16 between the peeling layer 15 and the support substrate 10, the interface 14 between the peeling layer 15 and the temporary emperor adhesive layer 20, and the like.

In addition to the temporary fixing adhesive layer 20, the release layer 15 is attached to the support substrate 10 and the thin film device 3.
According to the configuration of interposing between 0, when it is difficult to control the adhesive force of the temporary fixing adhesive layer 20, and it is difficult to remove (peel transfer) the thin film device from the support substrate 10 with the temporary fixing adhesive layer 20 The release layer 15 can also be used for removing the thin film device, and the movement of the thin film device is facilitated.

(Example 3)
FIG. 3 shows a third embodiment of the present invention. In the figure, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

In the thin film device supply body of this embodiment, the thin film device 30 is fixed to the support substrate via the release layer 15 and the temporary fixing adhesive layer 20. And the thin film device 30 is comprised by the flexible substrate 25 and the thin film element layer 35 etc. which were formed on it. The thin film device 30 is bonded to the flexible substrate 25 via an adhesive layer (not shown) (a permanent adhesive layer 34 (see FIG. 4) described later). That is, the thin film device supply body includes the support substrate 10 and the release layer 1.
5, temporary fixing adhesive layer 20, flexible substrate 25, (permanent adhesive layer 34) and thin film element layer 3
5 is laminated.

The flexible substrate 25 has flexibility and elasticity as mechanical characteristics. Preferably, it has a certain degree of rigidity (strength). Thus, if the flexible substrate 25 having flexibility is used, it is possible to realize excellent characteristics that cannot be obtained with a highly rigid glass substrate or the like.

As a material of such a flexible substrate 25, various synthetic resins are preferable. The synthetic resin may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin cyclic polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), modified polyolefin, polychlorinated Vinyl, polyvinylene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate,
Poly (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVOH), polyethylene terephthalate (PET) Polyesters such as polybutylene terephthalate (PBT) and polycyclohexane terephthalate (PCT),
Polyether, polyetherketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate,
Various thermoplastic elastomers such as aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluorine resins, styrene, polyolefin, polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene , Epoxy resin, phenol resin, urea resin, melamine resin, unsaturated polyester, silicone resin, polyurethane, etc., or a combination of one or more of these (for example, as a laminate of two or more layers) Can do.
Further, it is desirable that the flexible substrate 25 has translucency.

The thickness of the flexible substrate 25 is the strength of the flexible substrate 25 and the permanent adhesive layer 33,
The thickness of the thin film element 35 is selected, but for example, it is preferably about 20 μm to 500 μm.

Example 4
Next, the manufacturing method of the thin film device supply body of the present invention will be described with reference to FIGS.
This will be described with reference to 3).

First, as shown in FIG. 4A, for example, a light-transmitting heat-resistant substrate such as quartz glass that can withstand about 1000 ° C. is used as a manufacturer substrate 27.

The manufacturer substrate 27 includes quartz glass, soda glass, and Corning 7059 (trade name).
Further, heat-resistant glass such as Nippon Electric Glass OA-2 (trade name) can be used. Manufacturer board 2
The thickness of 7 has no large limiting element, but is preferably about 0.1 mm to 0.5 mm, more preferably 0.5 mm to 1.5 mm. If the thickness of the manufacturer's substrate 27 is too thin, the strength is reduced. Conversely, if the thickness is too thick, the irradiation light is attenuated when the transmittance of the manufacturer's substrate 27 is low. However, when the transmittance of the irradiation light of the manufacturer substrate 27 is high, the thickness can be increased beyond the upper limit.

A release layer 28 is formed on the manufacturer substrate 27. The release layer 28 is formed, for example, by depositing an amorphous silicon layer on the manufacturer substrate 27 by a CVD method.

A thin film element layer 35 is formed on the release layer. The thin film element layer 35 is formed using known thin film semiconductor device manufacturing processes such as silicon layer deposition, crystallization, patterning, insulating film formation, ion implantation, heat treatment, and wiring / electrode formation.

A first temporary fixing adhesive layer 40 is formed on the thin film element layer 35. Temporary fixing adhesive layer 40
As a suitable example of the adhesive layer constituting the adhesive layer, there are various curable adhesives such as a reaction curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. Can be mentioned. The composition of the adhesive may be any one such as epoxy, acrylate, or silicone. The temporary fixing adhesive layer 40 may be a pressure sensitive adhesive sheet.

Further, it is desirable that the temporary fixing adhesive layer 40 is significantly reduced or eliminated by applying light irradiation or heating to the temporary fixing adhesive layer 40. Alternatively, temporary fixing adhesive layer 4
When a soluble adhesive is used for 0, it is desirable that the temporary fixing adhesive layer 40 can be dissolved by immersing it in water. When a water-soluble adhesive is used, only the temporary fixing adhesive layer 40 can be dissolved by immersing it in water.

Next, the temporary fixing substrate 5 having the release layer 45 formed on the surface of the temporary fixing adhesive layer 40 described above.
Paste 0. As the temporary fixing substrate 50, a substrate such as glass made of the same material as that of the supporting substrate 10 described above is used. The release layer 45 is formed on the temporary fixing substrate 50 by a separate process similar to the release layer 15 (not shown).

Next, as shown in FIG. 4B, light irradiation 70 is performed from the manufacturer's substrate 27 side to release the release layer 28.
And the thin film element layer 35 are peeled off. In the illustrated example, peeling occurs between the interface 26 of the peeling layer 28 and the interface 34 of the thin film element 35. A protective layer can be formed in advance on the base of the thin film element layer 35.

As shown in FIG. 4C, a permanent adhesive layer 33 is applied to the peeling surface 34 of the thin film element layer 35 to adhere the flexible substrate 25.

Next, as shown in FIG. 4D, the second temporary fixing adhesive layer 20 is applied to the flexible substrate 25 and the support substrate 10 is bonded thereto. Note that a release layer 15 (see FIG. 3) can be formed in advance on the support substrate 10.

Thus, the temporary fixing adhesive layer 20, the flexible substrate 25, the permanent adhesive layer 33, the thin film element layer 35, the temporary fixing adhesive layer 40, the release layer 45, and the temporary fixing substrate 50 are formed on the support substrate 10.
An intermediate structure in which is stacked is obtained. Here, the support substrate 10 to the thin film element layer 35 of the intermediate structure is a portion corresponding to the thin film device supply body shown in FIGS. 1, 2, and 3.

Next, the thin film device supply part is separated from the intermediate structure. FIG. 4 (e-1) to FIG. 4 (e-3) each show a separation mode.

FIG. 4E-1 shows the first separation mode. In this example, irradiation light 70 having high energy such as laser is applied to the temporary fixing adhesive layer 40 from above the temporary fixing substrate 50. Thereby, the bonding force of the temporary fixing adhesive layer 40 is extinguished, and the thin film device supply body including the support substrate 10 to the thin film element layer 35 is separated from the intermediate structure to obtain the thin film device supply body.

FIG. 4 (e-2) shows a second separation mode. In this example, irradiation light 70 having high energy such as a laser is applied to the peeling layer 45 from above the temporarily fixed substrate 50. Thereby, the bonding force of the release layer 45 is eliminated, and the support substrate 10 to the temporary fixing adhesive layer 4 are removed from the intermediate structure.
A thin film device supply body consisting of 0 is separated to obtain a thin film device supply body.

FIG. 4 (e-3) shows a third separation mode. In this example, the temporary fixing adhesive layer 40 is made of a soluble adhesive that dissolves in a solvent, preferably a water-soluble adhesive, and the temporary fixing adhesive layer 40 is removed with a solvent. Thereby, the thin film device supply body composed of the support substrate 10 to the thin film element layer 35 is separated from the intermediate structure to obtain the thin film device supply body.

Thus, although the supply body of a thin film device is manufactured, the supply body of the thin film device of this invention is not limited to the thing manufactured by the above-mentioned manufacturing method.

The description supplements the elemental technology in the manufacturing process described above.
The release layers 15, 28, and 45 desirably have a property that absorbs the irradiation light 70, thereby causing separation at the boundary surface with the adjacent layer or in the release layer.

Further, the gas contained in the release layers 15, 28, and 45 is released by the irradiation of the irradiation light 70, and the released gas causes a gap at the interface, thereby causing a change in the shape of each release layer. You can also. In this case, the roughness of the release layers 15, 28, and 45 after the irradiation light 70 is irradiated can be controlled by the number of irradiations of the irradiation light 70 and / or the content of gaseous elements.

Examples of the composition of the release layers 15, 28 and 45 include amorphous silicon. Examples of the gas element include hydrogen as described later.

Amorphous silicon is instantaneously melted by irradiation with light having a high energy such as a laser and changed to polysilicon when solidified again. When the amorphous silicon is crystallized, a crystal grain boundary is formed. Therefore, the peeling layers 15, 28, and 45 are undulated due to the crystal grain boundary. Further, when the irradiation layer 70 is repeatedly irradiated to the crystallized release layers 15, 28 and 45,
Since the forms of melting and solidification are different between the crystal grain boundaries and the crystal grains, the roughness of the release layers 15, 28 and 45 increases.

Further, this amorphous silicon may contain hydrogen. In this case, the hydrogen content is preferably about 2 at% or more, more preferably about 2 to 20 at%. When a predetermined amount of hydrogen is contained in this manner, hydrogen is released by irradiation with irradiation light, and the released hydrogen creates voids at the interface, forming undulations in the release layers 15, 28 and 45. Furthermore, when irradiation light is repeatedly irradiated, the contained hydrogen is gradually released, and the roughness of the interface may increase. In this case, when the hydrogen is completely released by receiving the number of times of irradiation according to the hydrogen content, no change occurs even if the irradiation light is repeatedly irradiated thereafter.

Further, as the composition of the release layers 15, 28 and 45, for example, polysilicon can be cited.

Similarly, the above-mentioned amorphous silicon is instantly melted and solidified again by irradiation with light having high energy. At this time, since the melting and solidification forms are different between the crystal grain boundaries and the crystal grains, the roughness of the release layers 15, 28 and 45 can be increased by repeatedly irradiating the irradiation light 70.

The advantage of adopting polysilicon as the composition of the release layers 15, 28 and 45 is that the above Tmax is set to a temperature equal to or higher than Tth, where Tth is the boundary temperature at which amorphous silicon undergoes phase transition to polysilicon. It is a point that can be. In other words, the range of process temperature when forming the thin film element layer 35 can be increased.

For example, when a thin film transistor is formed as the thin film element 35, not only a low temperature process but also a high temperature process can be applied as a formation method.

The thicknesses of the release layers 15, 28, and 45 vary depending on various conditions such as the composition, layer configuration, and formation method of each release layer, but it is desirable that the release layers 15, 28, and 45 have a thickness sufficient to absorb the irradiation light 70. If the thickness of each release layer is too small, the irradiation light 70 transmitted without being absorbed by each release layer may damage the thin film element layer 35. In addition, if the thickness of each release layer is too large, light energy is not transmitted to the release layer interface, and even if irradiated with irradiation light, there may be no change in the interface.

For example, the release layer is amorphous and silicon, and the irradiation light is excimer laser XeCl (wavelength 3
08 nm), the thicknesses of the release layers 15, 28 and 45 are preferably 25 nm or more, and more preferably 50 to 200 nm.

The peeling layers 15, 28, and 45 include a light shielding layer and / or a reflective layer for the purpose of preventing the irradiation light 70 from passing through each peeling layer and reaching the thin film element 35 and affecting the thin film element 35. You may go out.

As the light source of the irradiation light 70, laser light is preferably used. The type of laser light is a solid-state laser such as a ruby laser, a YAG laser, or a glass laser, a gas laser such as a He—Ne laser, a CO 2 laser, or an excimer laser, or a semiconductor laser that uses ZnS, GaAs, GaP, GaAlAs, or the like as a light source. Etc., any kind of material may be used. In particular, an excimer laser, a YAG laser, and a CO2 laser are preferable because a high output and a uniform energy density distribution can be easily obtained.

Further, the laser oscillation mode may be either continuous oscillation or pulse oscillation, and the beam shape may be any shape such as spot irradiation or line irradiation.

Depending on the composition and characteristics of the manufacturer's substrate 27, release layer 15, release layer 28, release layer 45, and thin film element 35, visible light, infrared rays, ultraviolet rays, microwaves, etc. emitted from a halogen lamp or the like are used as the light source of the irradiation light 70. It can also be used.

(Example 5)
FIG. 5 shows another method for manufacturing a thin film device supply body according to an embodiment of the present invention. In this manufacturing method, in addition to the manufacturing process described above (see FIG. 4), the thin film device 30 is mounted on the support substrate 1.
0, a temporary fixing substrate 50, and a step of dividing the substrate into a plurality of regions while being fixed to at least one of the manufacturer's substrates 27. FIG. 5 shows an example in which the thin film device 30 fixed to the support substrate 10 is divided. The step of dividing the thin film device 30 into a plurality of regions includes, for example, the grooves 6 in the boundary portions 60 of the plurality of regions of the thin film element layer 35 manufactured on the surface of the manufacturer substrate 27.
1 and the step of dividing the flexible substrate 25 at the boundary between the plurality of regions.

By fixing the thin film device 30 to the support substrate 10 or the like, the thin film device can be divided and the divided thin film device can be easily handled.

FIG. 6 further explains division of the manufacturing method of the thin film device supply body. When dividing the flexible substrate 25, the width of the processed region 60 a of the substrate 25 for dividing the flexible substrate 25 is larger than the width of the groove 61 formed in the boundary portion 60 of the plurality of regions of the thin film element layer 35. Is also set small.

The present invention relates to a method of manufacturing a thin film device by transferring a thin film element,
The present invention relates to a manufacturing method advantageous in manufacturing a large amount of flexible thin film devices having improved shape instability. The present invention is used when manufacturing thin film devices in various fields as various electronic devices become thin or flexible. Further, the thin film device is used for an electro-optical device and an electronic apparatus described later.

(Example 6)
The sixth embodiment of the present invention will be described below with reference to the drawings.
In the present embodiment, a case where a transfer layer is transferred once to a final transfer body will be described by taking a semiconductor device manufacturing method as an example. Here, the final transfer body refers to a transfer body that will eventually constitute a semiconductor device.

FIG. 7 is a diagram for explaining an example of the transfer method of the transfer target layer according to the first embodiment.
As shown in FIG. 7A, a transferred layer 114 is formed on one surface of a substrate 110 with a first separation layer 112 interposed therebetween.

First, the first separation layer 112 is formed on the substrate 110.
The substrate 110 is preferably made of, for example, a light-transmitting material that can transmit the irradiation light 123 irradiated in a later step. Further, the substrate 110 is preferably made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature when forming the first separation layer 112 and the transferred layer 114.

The first separation layer 112 absorbs irradiated light (for example, irradiated light 123), and within the layer and / or
Alternatively, it has a property of causing peeling (hereinafter referred to as “in-layer peeling” or “interfacial peeling”) at the interface, and preferably, atoms of a substance constituting the first separation layer 112 by light irradiation. It is preferable that the bonding force between the layers or the molecules disappears or decreases, that is, ablation occurs and leads to in-layer separation and / or interfacial separation.

Furthermore, gas may be emitted from the first separation layer 112 by light irradiation, and a separation effect may be exhibited. That is, when the component contained in the first separation layer 112 is released as a gas, the first separation layer 112 absorbs light and becomes a gas for a moment, and its vapor is released, contributing to the separation. There are cases.

An example of the first separation layer 112 is amorphous silicon (a-Si). The first separation layer 112 may be composed of a multilayer film. The multilayer film can be composed of, for example, an amorphous silicon film and a metal film such as Al formed thereon. In addition, ceramics, metals, organic polymer materials, etc. having the above properties can be used.

The formation method of the 1st separated layer 112 is not specifically limited, According to various conditions, such as a film | membrane composition and a film thickness, it selects suitably. For example, various vapor deposition methods such as CVD and sputtering, various plating methods,
Examples of the coating method include spin coating, various printing methods, a transfer method, an ink jet coating method, and a powder jet method. Two or more of these methods can also be formed in combination.

Although not shown in FIG. 7A, depending on the properties of the substrate 110 and the first separation layer 12,
An intermediate layer for the purpose of improving the adhesion between the two may be provided between the substrate 110 and the first separation layer 112. This intermediate layer prevents migration of components to or from the protective layer, insulating layer, transferred layer, or the like, which physically or chemically protect the transferred layer during manufacture or use, for example. It exhibits at least one of the functions as a barrier layer and a reflective layer.

Next, a thin film device (eg, a thin film transistor) 114 as a transfer layer is formed on the first separation layer 112. At this time, connection terminals, wiring, and the like necessary for electrical connection with the outside are formed as necessary.

Next, as shown in FIG. 7B, the final transfer body 32 that will eventually constitute the semiconductor device is bonded onto the thin film device 114 via the adhesive layer 130.

The final transfer body 132 used in the present invention has flexibility or flexibility. Such a final transfer body 132 may be a substrate, a sheet or a film, and the material constituting it is not particularly limited. The material constituting the final transfer body 132 may be a resin or a glass material.

A permanent adhesive is used as the adhesive constituting the adhesive layer 130, and suitable examples thereof include a reaction curable adhesive, a thermosetting adhesive, and a photocurable adhesive (eg, an ultraviolet curable adhesive). And anaerobic curable adhesives. The composition of the adhesive may be any of epoxy, acrylate, and silicone.

Next, as shown in FIG. 7C, the fixture 13 for reinforcing the strength of the final transfer body 132.
6 is bonded to the final transfer body 32 via an adhesive layer 134 for temporary fixing.

The fixture 136 is for easily separating the final transfer body 32 and the substrate 110 in a later step. The fixing device 136 is not particularly limited as long as it can reinforce the strength of the final transfer body 32. For example, a rigid substrate made of glass or resin is used.
A work table or the like may be used as the fixture 36, or may be directly fixed to the work table or the like. The material constituting the adhesive layer 134 for fixing the fixture 136 needs to be removable later. Examples of such an adhesive include an adhesive that becomes brittle by specific light, an adhesive that dissolves in a specific solvent, and the like. Specifically, for example, an acrylic resin-based water-soluble adhesive is used.

Here, the fixing device 136 is bonded through the adhesive layer 134, but may be formed by other methods. Specifically, for example, it may be fixed by vacuum suction.

Next, as shown in FIGS. 7D and 7E, the substrate 110 is separated from the transferred layer 114 by irradiating the first separation layer 112 with light 123 from the back surface 111 side of the substrate 110. . The irradiation light 123 passes through the substrate 110 and is irradiated to the first separation layer 112. Thereby, in-layer peeling and / or interface peeling occurs in the first separation layer 112. The principle that the internal separation and / or the interface separation of the first separation layer 112 occurs is that the constituent material of the first separation layer 112 is ablated, the gas contained in the first separation layer 112 is released, and further irradiation is performed. It is presumed to be due to phase changes such as melting and transpiration that occur immediately after.

Here, the ablation means that the fixing material that absorbs the irradiation light (the constituent material of the first separation layer 112) is excited photochemically or thermally, and the surface or internal atom or molecule bond is cut and released. In general, all or part of the constituent material of the first separation layer 112 is melted,
It appears as a phenomenon that causes phase change such as transpiration (vaporization). In addition, the phase change may result in a fine foamed state, resulting in a decrease in bonding strength.

The light source of the irradiation light 23 may be any light source such as X-rays, ultraviolet rays, visible light, infrared rays, laser light, millimeter waves, microwaves, electron beams, and radiation. Even in such a situation,
From the viewpoint of easily causing ablation, laser light is preferably used. The type of laser light may be any of a gas laser, a solid laser (semiconductor laser), etc., among which an excimer laser, an Nd-YAG laser, an Ar laser, a CO2 laser, a CO laser, and a He-Ne.
A laser or the like is preferable, and an excimer laser is more preferable.

Next, as shown in FIG. 7E, the substrate 110 and the final transfer body 132 are separated. For example, the substrate 110 is detached from the final transfer body 132 by applying a force to the substrate 110 and the final transfer body 132 in a direction in which both are separated. Transfer target layer 11 to be transferred by the light irradiation
Since the strength at which the substrate 4 and the substrate 110 are bonded is weakened, peeling transfer is easily performed.

Note that FIG. 7E illustrates the case where the first separation layer 112 adheres to the substrate 110 side, but peeling occurs in the first separation layer 112 or between the first separation layer 112 and the substrate 110. In some cases. In this case, the first separation layer 112 remains attached to the transfer layer 114, but the first separation layer 112 attached to the transfer layer 114 can be removed by washing, etching, ashing, or the like. is there.

Next, as shown in FIG. 7F, the fixture 136 is removed by removing the adhesive layer 134. When the adhesive layer 134 is composed of a water-soluble adhesive, it can be removed by washing with water or the like. Thus, by washing away the adhesive layer 134, the fixture 136 can be separated. In this manner, a semiconductor device in which the transferred layer 114 is provided on the final transfer body 132 having flexibility or flexibility can be obtained.

When the adhesive layer 134 is made of a material other than the water-soluble adhesive, for example, when it is made of an adhesive that can be decomposed by light irradiation or the like, the adhesive layer 134 is bonded by irradiating with appropriate light. Layer 134 can be removed.

According to this embodiment, the final transfer body 132 having flexibility or flexibility is fixed by the fixing tool 136, so that the substrate 110 and the final transfer body 132 are removed when the substrate 110 is removed from the final transfer body 132 side. Since a uniform force can be applied to the substrate 110, the substrate 110 and the final transfer body 132 can be easily separated. Thus, according to this embodiment, the fixture 1
Since it becomes possible to facilitate the transfer of peeling by a simple method of mounting 36,
Productivity can be improved and the cost of the resulting semiconductor device can be reduced.

In the above example, the fixture 136 is attached before the light irradiation, but the fixture 136 is attached to the substrate 1.
10 may be attached when separating from the final transfer body 132, and the order of attaching the fixture 136 is not particularly limited.

(Example 7)
In this embodiment, the transfer layer is temporarily transferred to the primary transfer member, and then transferred twice to the final transfer member (secondary transfer member) that will form the final product. explain.
8 and 9 are diagrams for explaining the transfer method of the transfer target layer according to the second embodiment. 8 and 9, the same elements as those in FIG. 7 are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 8A, a transfer layer 114 is formed on one surface of a substrate 110 with a first separation layer 112 interposed therebetween. Next, as shown in FIG. 8B, an adhesive layer 116 is formed on the transferred layer 114.
The primary transfer body 120 is joined via the second separation layer 118. Although it does not specifically limit as the primary transfer body 120, Substrates, such as glass and resin, are used. The adhesive layer 116 is used to adhere the second separation layer 118 and the transferred layer 114, and
It is preferable that the primary transfer body 120 is easily removed later when it is peeled off. As an adhesive constituting such an adhesive layer 116, for example, an acrylic resin-based water-soluble adhesive is used. Further, as the second separation layer 118, the same material as the first separation layer 112 is used.

Next, as shown in FIG. 8C, the first separation layer 112 is irradiated with the irradiation light 123 from the back surface side 111 of the substrate 110 to cause in-layer separation and / or interface separation in the first separation layer 112. Let
Thereafter, the substrate 110 is removed from the primary transfer body 120 by applying a force in the direction in which both are separated from each other on the primary transfer body 120 side and the substrate 110 side, and the transfer layer 114 is removed from the primary transfer body 1.
Transfer to 20 side.
Next, as shown in FIG. 8D, a secondary transfer body 126 having flexibility or flexibility is bonded to the surface of the transfer layer 114 from which the substrate 110 has been removed via an adhesive layer 124. .

Next, as shown in FIG. 9A, a fixing tool 136 is joined to the secondary transfer body 126 via a temporary fixing adhesive layer 134 in order to reinforce the strength of the secondary transfer body 126.
Next, as shown in FIGS. 9B and 9C, the second separation layer 1 is formed from the primary transfer body 120 side.
18 is irradiated with irradiation light 131, and the transferred layer 11 to which the adhesive layer 116 is attached is attached to the primary transfer body 120.
4 is peeled off.

Next, as shown in FIG. 9D, the adhesive layer 116, the adhesive layer 134, and the fixture 136 are removed. When the adhesive layer 116 and the adhesive layer 134 are made of a water-soluble adhesive, it can be removed by washing or the like. In addition, by washing away the adhesive layer 134, the fixture 13 is removed.
6 can be removed. In this way, a semiconductor device can be obtained.
When the adhesive layer 116 and the adhesive layer 128 are made of a material other than the water-soluble adhesive, for example, when the adhesive layer 116 and the adhesive layer 128 are made of an adhesive that can be decomposed by light irradiation or the like, appropriate light is irradiated. As a result, the adhesive layer 116 and the adhesive layer 134 can be removed.

As in the present embodiment, by using the fixture 136, even when the secondary transfer onto the primary transfer body 120 and the secondary transfer body 132 is performed twice, the primary transfer body 120 and the secondary transfer body 132 are evenly distributed. Therefore, it is possible to easily pull them apart. Therefore, workability is improved, so that production efficiency can be increased and the cost of the semiconductor device can be reduced.

In the above example, the case where the secondary transfer body 132 is made of a material having flexibility or flexibility has been described. However, both the primary transfer body 120 and the secondary transfer body 132 are flexible or flexible. The method of the present invention can also be used when it is made of a material having When the primary transfer body 120 and the secondary transfer body 132 having flexibility or flexibility are separated, the fixing tool 136 is attached to both the primary transfer body 120 and the secondary transfer body 132, whereby the primary transfer body 120. In addition, the secondary transfer body 132 can be easily separated.

(Electro-optical device and electronic equipment)
The semiconductor device manufactured by the above method is suitably used for an electro-optical device or an electronic apparatus. Specific examples of the electro-optical device and the electronic apparatus according to the invention will be described with reference to FIGS. 10 and 11 are diagrams illustrating examples of various electronic apparatuses including the electro-optical device 600 (example: organic EL display device).

FIG. 11A shows an application example to a mobile phone, and the mobile phone 830 includes an antenna portion 831,
Audio output unit 832, audio input unit 833, operation unit 834, and electro-optical device 60 of the present invention
0 is provided. FIG. 10B shows an application example to a video camera.
0 includes an image receiving unit 841, an operation unit 842, an audio input unit 843, and an electro-optical device 600. FIG. 10C shows an application example to a portable personal computer (so-called PDA). The computer 850 includes a camera unit 851, an operation unit 852, and the electro-optical device 6.
00. FIG. 10D shows an application example to a head-mounted display. The head-mounted display 860 includes a band 861, an optical system storage portion 862, and an electro-optical device 600.

FIG. 11A shows an application example to a television, and the television 900 includes an electro-optical device 600. The electro-optical device 600 can be similarly applied to a monitor device used for a personal computer or the like. FIG. 11B shows an application example to a roll-up television, and the roll-up television 910 includes an electro-optical device 600.

In the above example, the organic EL display device is described as an example of the electro-optical device. However, the present invention is not limited to this, and other various electro-optical devices (for example, plasma light-emitting device, electrophoretic device, liquid crystal device) It is also possible to apply to an electro-optical device manufacturing method configured by The scope of application of the present invention is not limited to the electro-optical device and the manufacturing method thereof, and can be widely applied to various devices formed using a transfer technique. Also,
The electro-optical device is not limited to the above-described example, and can be applied to various electronic devices such as a fax machine with a display function, a digital camera finder, a portable TV, and an electronic notebook.

FIG. 1 is a manufacturing process cross-sectional view for explaining a mode of the first embodiment of the present invention. FIG. 2 is a manufacturing process sectional view for explaining an embodiment of the present invention. FIG. 3 is a manufacturing process cross-sectional view illustrating an embodiment of the present invention. FIG. 4 is a process diagram for explaining an embodiment of the present invention. FIG. 5 is a manufacturing process cross-sectional view illustrating an embodiment of the present invention. FIG. 6 is a manufacturing process cross-sectional view illustrating an embodiment of the present invention. FIG. 7 is a diagram for explaining an example of the transfer method of the transfer target layer according to the second embodiment. FIG. 8 is a diagram for explaining the transfer method of the transfer target layer according to the third embodiment. FIG. 9 is a diagram for explaining a transfer method of the transfer target layer according to the third embodiment. FIG. 10 is a diagram illustrating examples of various electronic apparatuses configured to include an electro-optical device (for example, an organic EL display device). FIG. 11 is a diagram illustrating examples of various electronic apparatuses configured to include an electro-optical device (eg, an organic EL display device).

DESCRIPTION OF SYMBOLS 9 ... Back surface of support substrate, 10 ... Support substrate, 14 ... First release layer interface in contact with support substrate, 15 ... First release layer, 16 ... For first temporary fixing First peel layer interface in contact with the adhesive layer, 20 ... first temporary fixing adhesive layer, 25 ... flexible substrate, 26 ... second peel layer interface in contact with the thin film element, 27 ... Manufacturer substrate, 28 ... second release layer, 29
... second release layer interface in contact with manufacturer substrate, 30 ... thin film device, 33 ... permanent adhesive layer, 34 ... surface with manufacturer substrate removed, 35 ... thin film element, 40. .. Second temporary fixing adhesive layer 44. Third release layer interface contacting the second temporary fixing adhesive layer 45.
..Third release layer, 46 ... third release layer interface in contact with temporary fixing substrate, 50 ... temporary fixing substrate, 60 ... boundary portion, 61 ... groove, 70 ... Irradiation light, 110 ... substrate, 1
DESCRIPTION OF SYMBOLS 11 ... Back surface 12 ... 1st separated layer, 114 ... Transfer target layer, 116 ... Adhesive layer, 1
18 ... second separation layer, 120 ... primary transfer body, 123 ... irradiation light, 124 ... adhesion layer, 126 ... secondary transfer body, 128 ... adhesion layer, 130 ...・ Adhesive layer, 131 ・ ・
Irradiation light, 132 ... final transfer body (secondary transfer body), 134 ... adhesive layer, 136 ...
Fixing tool, 600 ... electro-optical device, 830 ... mobile phone, 831 ... antenna part,
832 ... Voice output unit, 833 ... Voice input unit, 834 ... Operation unit, 840 ...
Video camera, 841... Image receiving unit, 842... Operation unit, 843.
50 ... Computer, 851 ... Camera unit, 852 ... Operation unit, 860 ... Head mounted display, 861 ... Band, 862 ... Optical system storage unit, 900
..Television, 910 ... Roll-up type television

In order to achieve the above object, a semiconductor device according to an embodiment of the present invention includes a separation layer formed on the entire surface of a light-transmitting substrate, a thin film element layer formed on the separation layer, and fixed on the thin film element layer. The substrate is bonded through the adhesive layer for separation, and the thin film element layer and the translucent substrate are separated from each other by irradiating light from the back side of the translucent substrate in the separation layer.

Furthermore, a thin film device supply body according to another embodiment of the present invention includes a structure in which a thin film device is fixed on a support substrate via a temporary fixing adhesive layer. According to this configuration, the thin film device can be indirectly handled through the support substrate on which the thin film device is fixed.

Another aspect of the present invention provides a method for manufacturing a semiconductor device using the transfer method. According to this, since the above transfer method is used, it is possible to easily perform the peeling transfer, and it is possible to improve the productivity of the semiconductor device. Therefore, the price of the semiconductor device can be reduced. Another embodiment of the present invention is an electronic device using the semiconductor device obtained by the above manufacturing method. According to this, an inexpensive electronic device can be provided.

According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the step of forming a separation layer on the entire surface of a light-transmitting substrate, the step of forming a thin film element layer on the separation layer, and the fixing on the thin film element layer. And a step of joining the substrate through the adhesive layer, and a step of separating the thin film element layer and the light transmissive substrate by irradiating light from the back side of the light transmissive substrate in the separation layer. To do.

Claims (25)

A thin film device supply body comprising a structure in which a thin film device is fixed on a support substrate via a temporary fixing adhesive layer. The thin film device supply body according to claim 1, wherein the support substrate includes a release layer. The thin film device supply body according to claim 1, wherein the thin film device has a structure in which a thin film element is mounted on a flexible substrate having flexibility. The thin film device supply body according to any one of claims 1 to 3, wherein the adhesive layer for temporary fixing significantly reduces or eliminates the adhesive force by light irradiation or heating. The thin film device supply body according to any one of claims 2 to 4, wherein the peeling layer causes interfacial peeling and / or intra-layer peeling by light irradiation. The thin film device supply body according to claim 1, wherein the support substrate has translucency. The thin film device is divided into a plurality of regions.
The thin film device supply body according to any one of the above. 5. The thin film device supply body according to claim 4, wherein the light irradiation or heating is performed only on a selected region of the divided regions of the thin film device. A method of manufacturing a thin film device supply body that is capable of peeling and transferring a thin film device on a support substrate,
Fixing the temporary fixing substrate to the thin film element layer manufactured on the surface of the manufacturer substrate via the first temporary fixing adhesive layer;
Removing the manufacturer substrate from the thin film element layer;
Bonding a flexible substrate through a permanent adhesive layer to the surface of the thin film element layer from which the manufacturer substrate has been removed;
Fixing the support substrate to the surface opposite to the surface to which the thin film element layer of the flexible substrate is bonded via a second temporary fixing adhesive layer;
Removing the temporarily fixed substrate from the thin film element;
A method for manufacturing a thin film device supply body. Removing the manufacturer substrate from the thin film element layer,
A light-transmitting substrate is used as the manufacturer substrate, and light is irradiated from the back side of the substrate to a release layer previously formed on the surface of the substrate, and interfacial peeling and / or intra-layer peeling is performed on the peeling layer. The method for producing a thin film device supply body according to claim 9, wherein the thin film device supply body is produced. Removing the manufacturer substrate from the thin film element layer,
The method of manufacturing a thin film device supply body according to claim 9, wherein the manufacturer substrate is ground and / or etched. The step of removing the temporarily fixed substrate from the thin film element layer,
The thin film device supply body according to claim 9, wherein the first temporary fixing adhesive layer is irradiated with light or heated to reduce or eliminate the adhesive force of the adhesive layer. Method. The step of removing the temporarily fixed substrate from the thin film element layer,
The light irradiation is performed on a peeling layer previously formed on the temporary fixing substrate, and interfacial peeling and / or peeling within the layer is caused in the peeling layer. Manufacturing method of thin film device supply body. The step of removing the temporarily fixed substrate from the thin film element layer,
10. The first temporary fixing adhesive layer is dissolved in a solvent.
The manufacturing method of the supply body of the thin film device of description. Furthermore, after the thin film element layer is fixed to any one of the support substrate, the temporarily fixed substrate, and the manufacturer substrate, the thin film element layer is further divided into a plurality of regions.
The manufacturing method of the supply body of the thin film device in any one of Claims 9 thru | or 14. The step of dividing the thin film element layer into a plurality of regions,
Forming a groove at a boundary between the plurality of regions of the thin film element layer;
Dividing the flexible substrate at a boundary between the plurality of regions;
The method for manufacturing a thin film device supply body according to claim 15, comprising: The step of dividing the flexible substrate at the boundary between the plurality of regions,
17. The thin film device supply according to claim 16, wherein a width of a region to be processed of the flexible substrate is formed to be smaller than a width of a groove formed at a boundary portion of the region of the thin film element layer. Body manufacturing method. An electronic apparatus equipped with the thin film device supplied from the thin film device supply body according to claim 1. A method of transferring a transfer layer formed on a substrate to a transfer body having flexibility or flexibility,
A first step of forming a transfer layer on the substrate;
A second step of joining the transfer layer formed on the substrate to a transfer body having flexibility or flexibility fixed to a fixture;
A third step of peeling and transferring the transfer layer from the substrate to the transfer body;
A method for transferring a layer to be transferred, comprising: A method of transferring a transfer layer formed on a substrate to a transfer body having flexibility or flexibility,
A first step of forming a transfer layer on the substrate;
A second step of bonding the substrate to the transferred layer to a primary transfer member;
A third step of peeling and transferring the transferred layer from the substrate to the primary transfer member;
A fourth step of joining the transferred layer transferred to the primary transfer body to a secondary transfer body having flexibility or flexibility fixed to a fixture;
A fifth step of peeling and transferring the transfer layer from the primary transfer member to the secondary transfer member;
A method for transferring a layer to be transferred, comprising: A method of transferring a transfer layer formed on a substrate to a transfer body having flexibility or flexibility,
A first step of forming a transfer layer on the substrate;
A second step of joining the substrate to a primary transfer body having flexibility or flexibility fixed to a fixture via the transfer layer;
A third step of peeling and transferring the transferred layer from the substrate to the primary transfer member;
A fourth step of joining the transferred layer transferred to the primary transfer body to a secondary transfer body having flexibility or flexibility fixed to a fixture;
A fifth step of peeling and transferring the transfer layer from the primary transfer member to the secondary transfer member;
A method for transferring a layer to be transferred, comprising:   The transfer method according to claim 19, wherein the fixture is an auxiliary substrate. The transfer method according to claim 19, wherein the transfer layer is a thin film device. A method for manufacturing a semiconductor device, wherein the transfer method according to claim 19 is used. An electronic apparatus using the semiconductor device obtained by the manufacturing method according to claim 24.

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