JP2007088235A - Method of transferring thin film element, manufacturing method, method of manufacturing thin-film device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a supplier for supplying thin film devices and its manufacturing method which facilitates handling for manufacturing and delivering even a thin film device having a shape unstability, a technology for peeling and transferring a layer to be transferred onto a substrate having a softness or flexibility, a technology for easily assembling an indicator on the transferred layer, a method of manufacturing a thin film element, utilizing such peeling and transferring technology, and an electronic apparatus manufactured thereby. <P>SOLUTION: The method of transferring a thin film element comprises a step of assembling an indicator on the surface of a transferred layer 30 being fixed to a support board through a provisionally fixing adhesive 60, by bonding the transferred layer to a final transfer board 50 through a permanent adhesive layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a transfer technique for a thin film element and a mounting technique after transfer, and more particularly, a transfer method that can be easily peeled and transferred even when a transfer body has flexibility or flexibility, and easily on a thin film element. Manufacturing method and electronic device capable of mounting display element and the like on the substrate.

  In recent years, regarding the manufacture of thin film devices including thin film elements such as thin film transistors (TFTs) and thin film diodes (TFDs), the thin film elements are transferred from a manufacturer substrate on which the thin film elements themselves are manufactured to, for example, a flexible flexible substrate. Therefore, a technique for manufacturing a thin film device having light weight, excellent impact resistance, and flexibility has been studied.

  For example, as a method of transferring a thin film element manufactured on a manufacturer's substrate to a flexible substrate or the like on a transfer substrate, a thin film element is manufactured on a manufacturer's substrate via a release layer, and this is adhered to a transfer destination substrate. A transfer method for irradiating the release layer with light to cause release and releasing the manufacturer's substrate from the thin film element has been developed, and a patent application has already been filed (JP-A-10-125931). In addition, a transfer method has been developed in which a thin film element is primarily transferred onto a temporary transfer substrate (primary transfer member) and then transferred onto a transfer destination substrate (secondary transfer member), and a patent application has already been filed (JP-A-11-26733). Publication, Unexamined-Japanese-Patent No. 2001-189460).

According to these transfer methods, after manufacturing a thin film element that requires a high-temperature process and strict processing accuracy on a manufacturer substrate that is excellent in heat resistance and shape stability and suitable for manufacturing a thin film element, for example, resin A flexible thin film device can be manufactured by transferring onto a lightweight and flexible substrate such as a substrate.
Japanese Patent Laid-Open No. 10-125931 JP 11-26733 A Japanese Patent Laid-Open No. 2001-189460

  However, the flexible thin film device manufactured by using the above-described conventional transfer technology is lightweight and excellent in flexibility, but has a drawback that it is difficult to handle because of its unstable shape. That is, since the substrate is flexible, mistakes such as dropping are likely to occur when the substrate is held or transported by the same method as when handling conventional glass or silicon wafers. Moreover, when manufacturing a display apparatus, it was similarly difficult to pass through the process of forming a display material on a flexible thin film element device, a mounting process, and an inspection process.

Therefore, an object of the present invention is to provide a thin film device supply body and a method for manufacturing the thin film device that facilitate the handling of manufacture and shipment even for a thin film device having shape instability.
In addition, the present invention provides a technique for peeling and transferring a transfer layer onto a substrate having flexibility or flexibility, and a display on the transfer layer after peeling and transferring the transfer layer onto a substrate having flexibility or flexibility. An object is to provide a technique for easily incorporating an apparatus.
Another object of the present invention is to provide a method of manufacturing a thin film element using such a peeling transfer technique and an electronic device manufactured by the method.

  In order to achieve the above object, a method for manufacturing a thin film element according to the present invention is a method for transferring a transfer layer formed on a manufacturer substrate to a transfer body having flexibility or flexibility, on the manufacturer substrate. A first step of forming a transferred layer; a second step of bonding the transferred layer formed on the production substrate to a final transfer body having flexibility or flexibility via a permanent adhesive; A third step of bonding a support substrate to the back surface of the final transfer substrate via a temporary fixing adhesive; and a fourth step of peeling and transferring the transferred layer from the manufacturer substrate to the final transfer substrate. .

  According to this, by fixing the transfer body having flexibility or flexibility to the support substrate, it becomes possible to apply a uniform force to the substrate and the transfer body when peeling, so that the substrate can be simply used. Can be peeled off from the transfer body to which the transfer layer is bonded. This transfer layer transfer method is used, for example, in the manufacture of thin film semiconductor devices, the manufacturing method of sheet-like electro-optical devices, the manufacturing method of electronic equipment, and the like.

  Another aspect of the present invention is a method for transferring a transfer layer formed on a manufacturer substrate to a transfer body having flexibility or flexibility, wherein the transfer layer is formed on the manufacturer substrate. A second step of bonding the transferred layer on the manufacturer substrate to the temporary transfer substrate via a temporary adhesive, and a third step of peeling and transferring the transferred layer from the manufacturer substrate to the temporary transfer substrate. A fourth step of bonding the transferred layer transferred to the temporary transfer substrate to the final transfer substrate having flexibility or flexibility, and a temporary fixing adhesive on the back surface of the final transfer substrate. A transfer method including a fifth step of bonding the support substrate and a sixth step of peeling and transferring the transfer layer from the temporary transfer substrate to the final transfer substrate.

  According to this, when the transfer is performed twice, the final transfer substrate is supported even when the final transfer substrate to be finally transferred (second time) has flexibility or flexibility. By fixing to the substrate, the temporary transfer substrate can be easily peeled from the final transfer substrate to which the transfer layer is bonded.

  According to this configuration, since the thin film element is fixed to the support substrate, it can be handled indirectly through the support substrate.

  Here, the support substrate includes a hard substrate having excellent shape stability, such as glass, quartz, or silicon wafer. Since these substrates are very commonly used in the manufacturing process of semiconductors and liquid crystal displays, they are very easy to handle. A relatively thick plastic substrate is also included.

  The support substrate is preferably a translucent substrate. Thus, it is possible to apply light energy that causes the temporary fixing adhesive layer to peel off or eliminates (decreases) the adhesive force through the support substrate.

  The temporary fixing adhesive layer has a function of temporarily fixing the thin film device to the support substrate and a function of removing the thin film device as necessary. As the property of the adhesive layer, a liquid or paste-like precursor may be exerted by curing it using means such as heat curing or photocuring, and a thin film device can be formed by an adhesive force like an adhesive sheet. May be fixed to the support substrate.

  In the method for manufacturing a thin film element of the present invention, the step of peeling the layer to be peeled from the manufacturer substrate and the step of peeling the layer to be peeled from the temporary transfer substrate are translucent as the manufacturer substrate and the temporary transfer substrate. The release layer formed in advance on the surface of these substrates is irradiated with light from the back side of the manufacturer's substrate and the back side of the temporary transfer substrate, and the release layer is subjected to interface peeling and / or It causes delamination in the layer.

  The step of peeling the layer to be peeled from the manufacturer substrate may be a method of grinding and / or etching the manufacturer substrate.

  More preferably, the temporary fixing substrate is a substrate such as glass or quartz (quartz glass) and exhibits translucency.

  Further, in the present invention described above, each release layer is preferably made of a material that causes peeling (ablation) when the atomic force or the intermolecular force is lost or reduced by irradiation with light such as a laser beam.

  Further, the present invention provides the transfer layer surface in a state where the transfer layer is bonded to the final transfer substrate via the permanent adhesive layer and fixed to the support substrate via the temporary fixing adhesive. And a step of incorporating a display device into the device.

  According to such a configuration, since the thin film element is fixed to the support substrate, it can be handled indirectly via the support substrate, and the assembly process of a display device such as a liquid crystal, an electrophoretic display, or an organic EL display, or a ribbon The mounting process and inspection process for cables and the like can be performed quickly.

  Examples of the layer to be transferred include thin film elements such as thin film transistors.

  The electronic device of the present invention is configured by mounting a thin film element provided by the above-described manufacturing method.

  In an embodiment of the present invention, a thin film element layer on which a TFT (thin film transistor) circuit or the like is formed by a transfer transfer method is transferred to a flexible substrate in a manufacturing process of an electronic device such as an electro-optical device using the flexible substrate. . At this time, by attaching a support substrate having high mechanical strength to a flexible substrate that is difficult to handle, and supporting the flexible substrate during the process to avoid bending, etc. This facilitates handling of the display device assembly process, mounting process, inspection process, and the like.

Example 1
FIG. 1 shows a method of manufacturing a thin film device according to the first embodiment of the present invention. As shown in the figure, the thin film device supplier of this example has a transfer layer 30 formed on the surface of a manufacturer substrate 10 with a release layer 20 interposed therebetween.

  The manufacturer substrate 10 is preferably made of, for example, a light-transmitting material that can transmit the irradiation light 110 irradiated in a later step. The substrate 10 is preferably made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature when the release layer 20 and the transferred layer 30 are formed.

  The release layer 20 absorbs irradiated light (eg, light irradiation 110) and has such a property as to cause peeling (hereinafter referred to as “in-layer peeling” or “interfacial peeling”) in the layer and / or the interface. Preferably, the bonding force between the atoms or molecules of the substance constituting the release layer 20 disappears or decreases due to light irradiation, that is, ablation occurs and the layer is peeled off and / or the interface. What leads to peeling is good.

  Furthermore, the gas may be released from the release layer 20 by light irradiation, and a separation effect may be exhibited. That is, there are a case where the component contained in the release layer 20 is released as a gas and a case where the release layer 20 absorbs light and becomes a gas for a moment, and its vapor is released, contributing to separation. .

  Examples of such a release layer 20 include amorphous silicon (a-Si). Moreover, the peeling layer 20 may be comprised from the multilayer film. The multilayer film can be composed of, for example, an amorphous silicon film and a metal film such as Al formed thereon. In addition, ceramics, metals, organic polymer materials, etc. having the above properties can be used.

  The formation method of the peeling layer 20 is not specifically limited, It selects suitably according to various conditions, such as a film composition and a film thickness. For example, various vapor phase film forming methods such as CVD and sputtering, various plating methods, coating methods such as spin coating, various printing methods, transfer methods, ink jet coating methods, powder jet methods, etc., and two or more of these can be mentioned. Can also be formed.

  Although not shown in FIG. 1 (a), an intermediate layer for the purpose of improving the adhesion between the manufacturer substrate 10 and the release layer 20 is provided between the manufacturer substrate 10 and the release layer 20 according to the properties of the manufacturer substrate 10 and the release layer 20. It may be provided. This intermediate layer prevents migration of components to or from the protective layer, insulating layer, transferred layer, or the like, which physically or chemically protect the transferred layer during manufacture or use, for example. It exhibits at least one of the functions as a barrier layer and a reflective layer.

  Next, a thin film device (example: thin film transistor) 30 as a transfer layer is formed on the release layer 20. At this time, connection terminals, wiring, and the like necessary for electrical connection with the outside are formed as necessary.

  Next, as shown in FIG. 1B, a final transfer substrate 50 that will eventually constitute a semiconductor device is bonded onto the thin film device 30 via a permanent adhesive 40.

  The final transfer substrate 50 used in the present invention has flexibility or flexibility. Such a final transfer substrate 50 may be a sheet or a film, and the material constituting it is not particularly limited. The material constituting the final transfer substrate 50 may be a resin, a glass material, or a metal material.

  Suitable examples of the permanent adhesive 40 include a reaction curable adhesive, a thermosetting adhesive, a photocurable adhesive (eg, an ultraviolet curable adhesive), an anaerobic curable adhesive, and the like. The composition of the adhesive may be any of epoxy, acrylate, and silicone.

  Next, as shown in FIG. 1C, a support substrate 70 for reinforcing the strength of the final transfer substrate 50 is joined to the final transfer substrate 50 via a temporary fixing adhesive 60 for temporary fixing.

The support substrate 70 is for facilitating separation of the final transfer substrate 50 and the manufacturer substrate 10 in a later process. The support substrate 70 is not particularly limited as long as it can reinforce the strength of the final transfer substrate 50. For example, a rigid substrate made of glass or resin is used.
The material constituting the temporary fixing adhesive 60 for fixing the support substrate 70 needs to be removable later. Examples of such an adhesive include an adhesive that becomes brittle by specific light, an adhesive that can be easily peeled off by heating, and an adhesive that dissolves in a specific solvent. Specifically, for example, an acrylic resin-based water-soluble adhesive is used.

  Next, as shown in FIG. 1D, the manufacturer substrate 10 is separated from the transferred layer 30 by irradiating the release layer 20 with light 110 from the back surface 11 side of the manufacturer substrate 10. The irradiation light 110 passes through the manufacturer substrate 10 and is applied to the release layer 20. Thereby, in-layer peeling and / or interface peeling occur in the peeling layer 20. The principle that peeling in the release layer 20 and / or interfacial peeling occurs is that the constituent material of the release layer 20 is ablated, the gas contained in the release layer 20 is released, and further, melting and transpiration that occurs immediately after irradiation. It is estimated that this is due to a phase change.

  Here, the ablation means that the fixing material that absorbs the irradiation light (the constituent material of the release layer 20) is excited photochemically or thermally, and the bonds of atoms or molecules inside the surface or inside are cut and released. In general, all or part of the constituent material of the release layer 20 appears as a phenomenon that causes a phase change such as melting and transpiration (vaporization). In addition, the phase change may result in a fine foamed state, resulting in a decrease in bonding strength.

The light source of the irradiation light 110 may be any light source such as X-ray, ultraviolet light, visible light, infrared light, laser light, millimeter wave, microwave, electron beam, and radiation. Among these, laser light is preferably used from the viewpoint that ablation is likely to occur. The type of laser light may be any of a gas laser, a solid laser (semiconductor laser), etc. Among them, an excimer laser, an Nd-YAG laser, an Ar laser, a CO ₂ laser, a CO laser, a He—Ne laser, etc. are preferable. Excimer laser is preferred.

  Next, as shown in FIG. 1E, the manufacturer substrate 10 and the final transfer body substrate 50 are separated. For example, the manufacturer substrate 10 is detached from the final transfer substrate 50 by applying a force to the manufacturer substrate 10 and the final transfer substrate 50 in a direction in which both are separated. Since the strength of joining the transfer target layer 30 to be transferred and the manufacturer's substrate 10 is weakened by the light irradiation, peeling transfer is easily performed.

  In addition, in FIG.1 (e), although the case where the peeling layer 20 adhered to the manufacturer board | substrate 10 side was shown, peeling may arise in the peeling layer 20 or between the peeling layer 20 and the manufacturer board | substrate 10. FIG. In this case, the release layer 20 remains attached to the transfer layer 30, but the release layer 20 attached to the transfer layer 30 can be removed by washing, etching, ashing, or the like.

(Example 2)
In the present embodiment, a case where a transfer layer is temporarily transferred to a temporary transfer substrate and then transferred twice to a final transfer substrate that constitutes a final product will be described as an example.
FIG. 2 is a diagram for explaining the transfer method of the transfer target layer according to the second embodiment. In FIG. 2, the same elements as those in FIG.

  As shown in FIG. 2A, a transferred layer 30 is formed on one surface of the manufacturer's substrate 10 via a release layer 20. Next, as illustrated in FIG. 1B, the temporary transfer substrate 100 is bonded onto the transfer layer 30 via the temporary adhesive 80 and the release layer 90. The temporary transfer substrate 100 is not particularly limited, and a substrate such as glass or resin is used. The temporary adhesive 80 is used for adhering the release layer 90 and the layer to be transferred 30, and is preferably easily removed when the transfer substrate 100 is peeled off later. As an adhesive constituting such a temporary adhesive 80, for example, an acrylic resin-based water-soluble adhesive is used. Moreover, as the peeling layer 90, the thing similar to the peeling layer 20 is used.

Next, as shown in FIG. 2 (c), the peeling layer 20 is irradiated with irradiation light 110 from the back surface side 11 of the manufacturer's substrate 10, thereby causing in-layer peeling and / or interfacial peeling in the peeling layer 20. Thereafter, by applying a force in a direction to separate both the temporary transfer substrate 100 and the manufacturer substrate 10, the manufacturer substrate 10 is removed from the temporary transfer substrate 100, and the transferred layer 30 is transferred to the temporary transfer substrate 100 side. .
Next, as shown in FIG. 2 (d), a final transfer substrate 50 having flexibility or flexibility is bonded to the surface of the transferred layer 30 from which the manufacturer substrate 10 is removed via a permanent adhesive 40. To do.

Next, as shown in FIG. 2 (e), a support substrate 70 is bonded to the final transfer substrate 50 via a temporary fixing adhesive 60 in order to reinforce the strength of the final transfer substrate 50.
Next, as shown in FIG. 2F, the release layer 90 is irradiated with irradiation light 110 from the temporary transfer substrate 100 side, and the temporary transfer substrate 100 is peeled from the transferred layer 30 to which the temporary adhesive 80 is adhered.

Next, as shown in FIG. 2F, the temporary adhesive 80 is removed. When the temporary adhesive 80 is composed of a water-soluble adhesive, it can be removed by washing with water.
In addition, when the temporary adhesive 80 is comprised from materials other than a water-soluble adhesive, for example, when comprised from the adhesive agent which can be decomposed | disassembled by light irradiation etc., by irradiating appropriate light, The temporary adhesive 80 can be removed.

  As the manufacturer substrate 10, heat resistant glass such as soda glass, Corning 7059 (trade name), and Nippon Electric Glass OA-2 (trade name) can be used in addition to quartz glass. The thickness of the manufacturer's substrate 10 is not greatly limited, but is preferably about 0.1 mm to 1.5 mm, and more preferably 0.5 mm to 1.5 mm. If the thickness of the manufacturer's substrate 10 is too thin, the strength is reduced. Conversely, if the thickness is too thick, the irradiation light is attenuated when the transmittance of the manufacturer's substrate 10 is low. However, when the transmittance of the irradiation light of the manufacturer substrate 10 is high, the thickness can be increased beyond the upper limit.

  The support substrate 70 is used for stably mounting a thin film device. In addition to quartz glass, glass such as soda glass, Corning 7059 (trade name), Nippon Electric Glass OA-2 (trade name), etc. A silicon wafer or a resin is used. These substrates are hard and have excellent shape stability.

  The support substrate 70 is desirably a light-transmitting substrate in order to apply light energy (or heat) to the temporary fixing adhesive layer 60 from the back surface 71 side.

  It is desirable that the temporary fixing adhesive layer 60 has a characteristic that the adhesive force is significantly reduced or eliminated by light irradiation or heating.

  As a property of the temporary fixing adhesive layer 60, a material that exhibits an adhesive force by curing a liquid or paste-like precursor using means such as thermosetting or photocuring can be used. The thin film device may be fixed to the support substrate by an adhesive force like an adhesive sheet.

  The temporary fixing adhesive layer 60 is formed for various purposes. For example, a protective film that physically or chemically protects the transferred layer 30 at the time of manufacture or use, a conductive layer, a light-shielding layer or a reflective layer of the irradiation light 110, a component to the transferred layer 30 or from the thin film element 35 Among those functions as a barrier layer that prevents the transition of the above, those that exhibit at least one of the functions can be mentioned.

  The transferred layer 30 includes a thin film transistor (TFT), a diode, a light emitting element, an optical element, various detection elements, a capacitor, a resistor, an inductor, a wiring, an electrode, an insulator, and the like, and a thin film circuit that exhibits a certain function. The thin film device, the thin film element described above, and the like are applicable.

  By adopting such a configuration, it becomes possible to indirectly handle the transferred layer 30 via the support substrate 70 having required physical and mechanical strength.

  For example, the transfer target layer 30 is bonded to a transfer target body (transfer destination substrate) (not shown) while being placed on the support substrate 70 with a permanent adhesive, and then temporarily fixed and adhered to the transfer target region by laser light irradiation or the like. By eliminating the adhesive force of the layer 60, the layer 60 is peeled off from the support substrate 70 and can be moved (peeled and transferred) to the transfer object.

  The final transfer substrate 50 has flexibility and elasticity as mechanical characteristics. Preferably, it has a certain degree of rigidity (strength). By using the flexible final transfer substrate 50 as described above, it is possible to realize excellent characteristics that cannot be obtained with a highly rigid glass substrate or the like.

As a material for such a final transfer substrate 50, various synthetic resins are preferable. The synthetic resin may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin cyclic polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), modified polyolefin, polychlorinated Vinyl, Polyvinyl chloride, Polystyrene, Polyamide, Polyimide, Polyamideimide, Polycarbonate, Poly (4-methylbenten-1), Ionomer, Acrylic resin, Polymethylmethacrylate, Acrylic-styrene copolymer (AS resin), Butadiene Polyesters such as styrene copolymers, polio copolymers (EVOH), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT), polyethers, poly -Terketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin , Polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene, and other thermoplastic elastomers, epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyesters, silicone resins, polyurethanes, etc. One or more of them can be used in combination (for example, as a laminate of two or more layers).
The final transfer substrate 50 preferably has translucency.

  Further, the thickness of the final transfer substrate 50 is selected depending on the strength of the final transfer substrate 50, the permanent adhesive layer 40, and the thickness of the transfer target layer 30. For example, the thickness is preferably about 5 μm to 500 μm.

The description supplements the elemental technology in the manufacturing process described above.
It is desirable that the release layers 20 and 90 have a property that absorbs the irradiation light 110 and thereby causes peeling at the boundary surface with the adjacent layer or in the release layer.

  In addition, the gas contained in the release layers 20 and 90 is released by the irradiation of the irradiation light 110, and the released gas causes a void at the interface, thereby causing a change in the shape of each release layer. it can. In this case, the roughness of the release layers 20 and 90 after irradiation with the irradiation light 110 can be controlled by the number of irradiations of the irradiation light 110 and / or the content of gaseous elements.

  Examples of the composition of the release layers 20 and 90 include amorphous silicon. Examples of the gas element include hydrogen as described later.

  Amorphous silicon is instantaneously melted by irradiation with light having a high energy such as a laser and changed to polysilicon when solidified again. When amorphous silicon is crystallized, a crystal grain boundary is formed, and therefore, the peeling layers 20 and 90 are undulated due to the crystal grain boundary. Further, when irradiation light 110 is repeatedly applied to the crystallized release layers 20 and 90, the form of melting and solidification is different between the crystal grain boundaries and the crystal grains, so that the roughness of the release layers 20 and 90 increases.

  Further, this amorphous silicon may contain hydrogen. In this case, the hydrogen content is preferably about 2 at% or more, more preferably about 2 to 20 at%. When a predetermined amount of hydrogen is contained in this way, hydrogen is released by irradiation with irradiation light, and the released hydrogen creates voids at the interface, forming undulations in the release layers 20 and 90. Furthermore, when irradiation light is repeatedly irradiated, the contained hydrogen is gradually released, and the roughness of the interface may increase. In this case, when the hydrogen is completely released by receiving the number of times of irradiation according to the hydrogen content, no change occurs even if the irradiation light is repeatedly irradiated thereafter.

  Moreover, as a composition of the peeling layers 20 and 90, a polysilicon can also be mentioned, for example.

  Similarly, the above-mentioned amorphous silicon is instantly melted and solidified again by irradiation with light having high energy. At this time, since the melting and solidification forms are different between the crystal grain boundaries and the crystal grains, the roughness of the release layers 20 and 90 can be increased by repeatedly irradiating the irradiation light 110.

  The advantage of adopting polysilicon as the composition of the release layers 20 and 90 is that the above Tmax can be set to a temperature equal to or higher than Tth, where Tth is the boundary temperature at which amorphous silicon undergoes phase transition to polysilicon. Is a point. In other words, the range of the process temperature when forming the transferred layer 30 can be increased.

  For example, when a thin film transistor is formed as the transfer layer 30, not only a low temperature process but also a high temperature process can be applied as a formation method.

  The thicknesses of the release layers 20 and 90 vary depending on various conditions such as the composition, layer configuration, and formation method of each release layer, but it is desirable that the release layers 20 and 90 have a thickness sufficient to absorb the irradiation light 110. If the thickness of each release layer is too small, the irradiated light 110 transmitted without being absorbed by each release layer may damage the transferred layer 30. In addition, if the thickness of each release layer is too large, light energy is not transmitted to the release layer interface, and even if irradiated with irradiation light, there may be no change in the interface.

(Example 3)
FIG. 3 shows a method for manufacturing a thin film device of the present invention. For example, this figure shows a method of manufacturing an electrophoretic display which is one of display devices.

  FIG. 3 (a) has the same structure as FIG. 1 (e) and FIG. 2 (f), and the transfer target 30 is bonded to the final transfer substrate 50 via the permanent adhesive 40, and the final transfer substrate. 50 is fixed to the support substrate 70 via a temporary fixing adhesive 60.

  As shown in FIG. 3 (b) in the configuration of FIG. 3 (a), a step of attaching the electrophoretic material layer 120 to the surface of the transfer target 30 at a predetermined position, a step of bonding the ribbon cable 130 to the terminal portion, and the like. By passing, it becomes possible to advance a process rapidly. Any display device such as a liquid crystal, an organic EL display, or an electrochromic display device can be easily formed on the transfer target.

As shown in FIG. 3C, the temporary fixing adhesive 60 and the support substrate 70 are removed. When the temporary fixing adhesive 60 is composed of a water-soluble adhesive, it can be removed by washing with water. Further, the support substrate 70 can be removed by washing away the temporary fixing adhesive 60. In this way, a semiconductor device can be obtained.
In addition, when the temporary fixing adhesive 60 is made of a material other than the water-soluble adhesive, for example, when it is made of an adhesive that can be decomposed by light irradiation or the like, the appropriate light is irradiated. Thus, the temporary fixing adhesive 60 can be removed.
Further, when the temporary fixing adhesive 60 is composed of an adhesive that can be decomposed by heat, the temporary fixing adhesive 60 can be removed by applying appropriate heat.

  The present invention relates to a method of manufacturing a thin film device by transferring a thin film element, and more particularly to a manufacturing method advantageous in manufacturing a large amount of flexible thin film devices having improved shape instability. The present invention is used when manufacturing thin film devices in various fields as various electronic devices become thin or flexible. Thin film devices are used in electro-optical devices such as electrophoretic displays and organic EL displays, electronic equipment, and the like.

  4A and 4B show examples of electronic devices including a thin film device. FIG. 4A is an example applied to the television apparatus 300, and the electronic apparatus includes the electro-optical device 1. FIG. 4B shows a roll-up television device 310 including the electro-optical device 1. Since the roll-up television device 310 shown in FIG. 4B needs to be flexible as a whole, the final substrate needs to be a highly elastic material such as a plastic substrate.

  The electro-optical device and the electronic apparatus are merely examples, and can be widely applied to devices using a thin film device transferred and manufactured by the method of manufacturing a thin film device of the present invention.

FIG. 1 is a manufacturing process sectional view for explaining the embodiment of the first embodiment of the present invention. FIG. 2 is a manufacturing process sectional view for explaining a mode of the second embodiment of the present invention. FIG. 3 is a plan view of the manufacturing process for explaining the embodiment of the present invention. FIG. 4 illustrates an example of an electronic device.

Explanation of symbols

10 ... Manufacturer substrate, 11 ... Manufacturer substrate back, 20 ... Release layer, 30 ... Transfer layer, 40 ... Permanent adhesive, 50 ... Final transfer substrate, 60 ... Temporary fixing adhesive, 70 ... support substrate, 71 ... back surface of support substrate, 80 ... temporary adhesive, 90 ... release layer, 100 ... temporary transfer substrate, 110 ... light irradiation, 120: Electrophoretic material layer, 130: Ribbon cable.

Claims (10)

A method of transferring a transfer layer formed on a manufacturer substrate to a transfer body having flexibility or flexibility,
A first step of forming a transfer layer on the manufacturer substrate;
A second step of joining the transferred layer formed on the production substrate to a final transfer body having flexibility or flexibility via a permanent adhesive;
A third step of bonding a support substrate to the back surface of the final transfer substrate via a temporary fixing adhesive;
A fourth step of peeling and transferring the transferred layer from the manufacturer substrate to the final transfer substrate;
A thin film element transfer method comprising: A method of transferring a transfer layer formed on a manufacturer substrate to a transfer body having flexibility or flexibility,
A first step of forming a transfer layer on the manufacturer substrate;
A second step of bonding the transfer layer on the manufacturer substrate to a temporary transfer substrate via a temporary adhesive;
A third step of peeling and transferring the transferred layer from the manufacturer substrate to the temporary transfer substrate;
A fourth step of bonding the transferred layer transferred to the temporary transfer substrate to the final transfer substrate having flexibility or flexibility;
A fifth step of bonding a support substrate to the back surface of the final transfer substrate via a temporary fixing adhesive;
A sixth step of peeling and transferring the transferred layer from the temporary transfer substrate to the final transfer substrate;
A thin film element transfer method comprising:   The thin film element transfer method according to claim 1, wherein the support substrate has translucency.   The thin film element transfer method according to claim 1, wherein the adhesive for temporary fixing significantly reduces or disappears the adhesive force by light irradiation or heating. The step of peeling the peelable layer from the manufacturer substrate and the step of peeling the peelable layer from the temporary transfer substrate are as follows:
Translucent substrates are used as the manufacturer substrate and the temporary transfer substrate, and light irradiation is performed from the back side of the manufacturer substrate and the back side of the temporary transfer substrate to the release layer previously formed on the surfaces of these substrates. 3. The method for transferring a thin film element according to claim 1, wherein the peeling layer causes interfacial peeling and / or intra-layer peeling. The step of peeling the layer to be peeled from the manufacturer substrate,
The thin film element transfer method according to claim 1, wherein the manufacturer substrate is ground and / or etched.   A method for manufacturing a thin film element, wherein the transfer method according to claim 1 is used.   3. The thin film element transfer method according to claim 1, wherein the transfer layer is further bonded to the final transfer substrate via the permanent adhesive layer, and the support substrate is bonded via the temporary fixing adhesive. A method of manufacturing a thin film device, comprising a step of incorporating a display device on the surface of the transfer layer while being fixed to the surface of the transfer layer.   The method of manufacturing a thin film device according to claim 8, wherein the transfer layer is a thin film element. An electronic apparatus using the thin film element obtained by the manufacturing method according to claim 1.