JP2012156268A - Liquid processing apparatus and liquid processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a liquid chemical from infiltrating into a line for gas discharge, in a liquid processing apparatus including a nozzle for discharging the liquid chemical to a lower surface of a substrate and a nozzle for discharging two-fluid for which a process liquid and a gas are mixed to the lower surface of the substrate.SOLUTION: An apparatus includes a nozzle 60 provided with a first discharge port 61 for discharging a processing fluid containing the liquid chemical to the lower surface of the substrate and a second discharge port 62 for discharging the two-fluid for which the process liquid and the gas are mixed to the lower surface of the substrate. At the part of the second discharge port of the nozzle, a process liquid discharge path 67b for guiding the process liquid to the second discharge port and a gas discharge path 68b for guiding the gas to the second discharge port are merged. When executing two-fluid spray processing, the gas is made to flow to the second discharge port at a first flow rate required for the execution of the two-fluid spray processing. When not executing the two-fluid spray processing, the gas is made to flow to the second discharge port at a second flow rate lower than the first flow rate at least while a first liquid chemical is being discharged from the first discharge port.

Description

  The present invention relates to a liquid processing apparatus and a liquid processing method for performing predetermined liquid processing such as cleaning processing or etching processing on a substrate by supplying a processing liquid to the lower surface of the substrate while rotating the substrate.

  In a semiconductor manufacturing process, a chemical solution is used to remove an unnecessary film (for example, an oxide film, a nitride film, a resist film that has finished its role as a mask) attached to a front surface or back surface of a substrate, for example, a semiconductor wafer. Cleaning or etching is performed.

  In Patent Document 1, a spin chuck that holds and rotates a wafer horizontally, and a two-fluid spray composed of a processing liquid such as a chemical solution and nitrogen gas is formed on the upper surface of the wafer held by the spin chuck at a radius of the wafer. A substrate processing apparatus is described that includes a two-fluid nozzle that discharges in the form of a band of corresponding length. The two-fluid nozzle generates two fluids (droplets) by injecting gas into the chemical liquid flowing through the chemical liquid discharge path from a gas discharge path (gas discharge line) that merges with the chemical liquid discharge path. Patent Document 1 suggests that such a two-fluid nozzle may be disposed below the wafer to clean the lower surface of the wafer.

  The inventor of the present invention has disclosed a liquid treatment for discharging a chemical solution from below the wafer to the lower surface of the wafer and a two-fluid solution for discharging two fluids formed by mixing a treatment liquid and a gas different from the chemical solution to the lower surface of the wafer from below the wafer We considered processing wafers in combination with spray processing. However, in this case, the chemical once reaching the wafer may fall from the wafer due to gravity and reattach to the nozzle, and the lower space of the wafer where the nozzle is disposed is exposed to the chemical atmosphere. For this reason, there is a concern that the chemical solution may enter the gas discharge line for generating the two-fluid spray of the nozzle and adversely affect the two-fluid spray process.

JP 2005-353739 A

  The present invention is a liquid processing apparatus having a discharge port for discharging a chemical solution from below the substrate to the bottom surface of the substrate, and a discharge port for discharging two fluids mixed with a processing liquid and a gas from below the substrate to the bottom surface of the substrate. Provided are a liquid processing apparatus and a liquid processing method capable of preventing a chemical liquid from entering a gas discharge line connected to a two-fluid discharge port.

  According to the first aspect of the present invention, the substrate holding member that holds the peripheral portion of the substrate, holds the substrate horizontally, the rotation driving unit that rotates the substrate holding unit, and the substrate holding A first discharge port for discharging a processing fluid containing a chemical solution to the lower surface of the substrate held by the substrate holding unit, the first discharge port being provided to be positioned below the lower surface of the substrate held by the unit; and the substrate holding A nozzle having a second discharge port for discharging two fluids, which are a mixture of a processing liquid and a gas, on the lower surface of the substrate held by the unit, in the portion of the second discharge port A nozzle in which a processing liquid discharge path for introducing the processing liquid to the second discharge opening and a gas discharge path for introducing the gas to the second discharge opening are joined together; and the first discharge opening A chemical supply mechanism for supplying the first chemical to the second discharge port and the second discharge port A processing liquid supply mechanism that supplies gas, a gas supply mechanism that supplies gas to the second discharge port, and a controller that controls at least the operation of the chemical liquid supply mechanism, the processing liquid supply mechanism, and the gas supply mechanism. And the controller controls the gas supply mechanism to execute the two-fluid spray process when performing the two-fluid spray process for discharging the two fluids from the second discharge port. When the chemical liquid process is performed to discharge at least the first chemical liquid from the first discharge port in the case where the gas flows to the second discharge port at a flow rate of 1 and the two-fluid spray process is not performed. There is provided a liquid processing apparatus that controls the gas supply mechanism so that gas flows to the second discharge port at a second flow rate smaller than the first flow rate.

  Further, according to the second aspect of the present invention, the substrate is held in a horizontal posture, the substrate is rotated, and a chemical is supplied from the first discharge port provided below the lower surface of the substrate. A chemical liquid treatment is performed on the substrate, and a treatment liquid discharge path that joins a second discharge port provided below the lower surface of the substrate at a portion of the second discharge port; A processing liquid and a gas are supplied to the second discharge port through gas discharge paths, respectively, whereby two fluids mixed with the processing liquid and the gas are discharged onto the lower surface of the substrate, and the two fluids are supplied to the substrate. And performing a two-fluid spray process in which the two fluids are discharged from the second discharge port, and a gas at a first flow rate necessary for the two-fluid spray process. Flowing into the second discharge port, In the case of not executing the lay process, at least when the chemical process for discharging the first chemical liquid from the first discharge port is executed, the gas is supplied at a second flow rate smaller than the first flow rate. A liquid processing method is provided that flows to the discharge port.

  According to the present invention, when the chemical solution is discharged from at least the first discharge port, the gas is discharged from the second discharge port at a second flow rate that is smaller than the first flow rate (the flow rate when the two-fluid spray is generated). By flowing in, the chemical solution is prevented from entering the gas discharge path.

It is the upper top view which looked at the liquid processing system containing the substrate cleaning apparatus by embodiment of this invention from upper direction. It is a longitudinal cross-sectional view which shows the structure of the board | substrate cleaning apparatus of embodiment of this invention, Comprising: It is a figure which shows a state when a lift pin plate and a washing | cleaning liquid supply pipe | tube are in a lowered position. It is a longitudinal cross-sectional view which shows the structure of the board | substrate cleaning apparatus of embodiment of this invention, Comprising: It is a figure which shows a state when a lift pin plate and a washing | cleaning liquid supply pipe | tube are in a raise position. It is the top view which looked at the substrate washing | cleaning apparatus in FIG. 2A which shows the state hold | maintained by the substrate support part and the fixed holding | maintenance part as shown to FIG. 2A from the upper direction. It is a perspective view which shows the structure of the lift pin plate of the board | substrate cleaning apparatus shown to FIG. 2A and 2B. It is a perspective view which shows the structure of the holding | maintenance plate of the board | substrate cleaning apparatus shown to FIG. 2A and FIG. 2B. 2B is an enlarged vertical cross-sectional view showing details of the configuration of a connecting member extending downward from the lift pin plate and a hollow receiving member extending downward from the holding plate and accommodating the connecting member in the substrate cleaning apparatus shown in FIGS. 2A and 2B. FIG. FIG. 3 is an enlarged longitudinal sectional view showing a configuration of a substrate support portion provided on a holding plate in the substrate cleaning apparatus shown in FIGS. 2A and 2B. FIG. 7 is an enlarged longitudinal sectional view showing a state when the lift pin plate moves downward from the state shown in FIG. 6. FIG. 8 is an enlarged longitudinal sectional view showing a state when the lift pin plate further moves downward from the state shown in FIG. 7. It is a perspective view which shows the structure of the raising / lowering mechanism which raises / lowers the process fluid supply pipe | tube of the board | substrate cleaning apparatus shown to FIG. 2A and FIG. 2B, a V-shaped nozzle, and these. It is a top view which shows a V-shaped nozzle. FIG. 5 is a schematic plan view for explaining the positional relationship among a V-shaped nozzle, lift pins, and a transfer arm when a wafer is transferred between a lift pin plate and a transfer arm. It is a figure explaining the structure and effect | action of the 1st rod-shaped part of a V-shaped nozzle, Comprising: (a) is sectional drawing which shows the internal structure of the 1st rod-shaped part along the XIa-XIa line | wire in FIG. ) Is an operation diagram showing how SPM is discharged from the first rod-shaped portion. It is a figure explaining the structure and effect | action of the 2nd rod-shaped part of a V-shaped nozzle, Comprising: (a) is sectional drawing which shows the internal structure of the 2nd rod-shaped part along the XIIa-XIIa line | wire in FIG. ) Is an operational diagram showing how only DIW is discharged from the second rod-shaped portion, and (c) is a two-fluid (two-fluid spray) mixture of DIW and N ₂ gas discharged from the second rod-shaped portion. It is an effect | action figure which shows a mode that it is performed. It is a figure explaining the structure of the center part of a V-shaped nozzle, Comprising: It is sectional drawing along the XIII-XIII line | wire in FIG. It is a figure explaining the structure of the center part of a V-shaped nozzle, Comprising: It is sectional drawing along the XVI-XVI line | wire in FIG. It is a schematic plan view explaining the spot which the process liquid discharged from the V-shaped nozzle forms on the lower surface of the wafer.

  Embodiments of the present invention will be described below with reference to the drawings. First, a processing system including a substrate cleaning apparatus according to an embodiment of a liquid processing apparatus according to the present invention will be described with reference to FIG. As shown in FIG. 1, the processing system includes a mounting table 101 for mounting a carrier containing a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as a substrate to be processed from the outside, and a carrier. A transfer arm 102 for taking out the wafer W, a shelf unit 103 for placing the wafer W taken out by the transfer arm 102, a wafer W placed on the shelf unit 103, and receiving the wafer W as a substrate. And a transfer arm 104 for transfer into the cleaning apparatus 10. As shown in FIG. 1, a plurality (10 in the embodiment shown in FIG. 1) of substrate cleaning apparatuses 10 and two reversers (REV, wafer turning apparatus) 105 are incorporated in the liquid processing system. As shown in FIG. 1, the transfer arm 104 is substantially U-shaped when viewed from above, but the transfer arm 104 places the wafer W on the lift pins 22 (described later) or from above the lift pins 22. When the wafer W is removed, the lift pins 22 and the V-shaped nozzle 60 described in detail later are not contacted (see FIG. 10B).

  Next, a schematic configuration of the substrate cleaning apparatus 10 will be described with reference to FIGS. 2A and 2B. The substrate cleaning apparatus 10 has a chamber 12 (shown only in FIG. 2A). A holding plate 30 for holding the wafer W and a holding plate 30 provided above the holding plate 30 are provided in the chamber 12. Lift pin plate 20 having lift pins 22 for supporting W from below, rotation drive unit 39 including an electric motor for rotating holding plate 30, through hole 30 a formed in the central portion of holding plate 30 and lift pin plate 20 A processing fluid supply pipe 40 provided so as to pass through a through hole 20a formed in the central portion of the wafer, and a V-shaped nozzle 60 for spraying the processing fluid supplied through the processing fluid supply pipe 40 toward the lower surface of the wafer W; A heap that can be positioned close to the upper surface of the wafer W held by the holding plate 30 and covering the upper surface of the wafer W. It has a cover member 80 over built-in, a. At the time of processing, the lift pin plate 20 is rotated integrally with the holding plate 30. A fan filter unit (FFU) 14 that forms a downflow of clean air in the chamber 12 is provided on the ceiling of the chamber 12. On the side wall of the chamber 12 (the right side wall in FIG. 2A), a wafer W inlet / outlet (not shown) provided with a shutter member (not shown) is formed, and the wafer W passes through this inlet / outlet. The transfer arm 104 holding can enter the chamber. 2A, the ceiling of the chamber 12 is drawn at a position lower than the actual position in FIG. 2A, but the ceiling is actually in the position where the transfer arm 104 and the cover member 80 shown in FIG. It is high enough to be positioned.

  The lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 can be moved up and down relatively with respect to the holding plate 30. Here, FIG. 2A shows a state when the lift pin plate 20, the processing fluid supply pipe 40 and the V-shaped nozzle 60 are in the lowered position, and FIG. 2B shows the lift pin plate 20, the processing fluid supply pipe 40 and the V-shaped nozzle 60. The state when the character-shaped nozzles 60 are respectively in the raised position is shown. The lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 move up and down between a lowered position as shown in FIG. 2A and a raised position as shown in FIG. 2B, respectively. FIG. 2A shows the cover member 80 in the processing position (lowering position). In FIG. 2B, the display of the cover member 80 in the retracted position (the raised position) is omitted, but in actuality, it is positioned above the wafer W indicated by the two-dot chain line.

  Next, details of each component of the substrate cleaning apparatus 10 will be described below.

  As shown in FIG. 3, the lift pin plate 20 is formed in a disc shape, and a through hole 20a is formed in the center portion thereof. An annular protrusion 20b is provided around the through hole 20a to prevent the liquid on the lift pin plate 20 from entering the through hole 20a. The processing fluid supply pipe 40 is passed through the through hole 20a. A plurality of (four in this example) lift pins 22 are provided in the vicinity of the peripheral edge of the surface of the lift pin plate 20. In the preferred embodiment, particularly as shown in FIG. 2C, four lift pins 22 form two pairs, with one pair 22a, 22a '(two on the left in FIG. 2C) in the circumferential direction. It is arranged at a position separated by a distance corresponding to a central angle of 30 degrees (acute angle), and the other pair 22b, 22b ′ (two on the right side in FIG. 2C) is 120 degrees in the circumferential direction at the central angle. It is arranged at a position separated by a distance corresponding to (obtuse angle). Further, the four lift pins 22 are arranged symmetrically with respect to a virtual line extending in the left-right direction through the center of the wafer W in FIG. 2C. By disposing the lift pins as shown in FIG. 2C, the wafer W can be supported on the lift pins 22 in a sufficiently stable state, and at the time of loading / unloading the wafer W (see FIG. 2B). The U-shaped transfer arm 104 (see also FIG. 10B) can enter below the wafer W (intrusion from the right hand side to the left hand side in FIG. 2C). A plurality of, for example, three rod-shaped connecting members 24 extend downward from the lower surface of the lift pin plate 20 (the surface opposite to the surface on which the lift pins 22 are provided). These connecting members 24 are provided at equal intervals in the circumferential direction in the vicinity of the peripheral edge of the lift pin plate 20.

  As shown in FIG. 4, the holding plate 30 has a disk shape, and a through hole 30a is formed at the center thereof. A processing fluid supply pipe 40 is passed through the through hole 30a. Further, as shown in FIG. 2A, a rotating cup 36 is attached to the surface of the holding plate 30 via a connection member 38. The rotary cup 36 surrounds the outer peripheral edge of the wafer W held by the holding plate 30 when the lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 are in the lowered position. Further, as shown in FIGS. 2A and 2C, the rotary cup 36 is provided with two fixed holding members 37 for holding the wafer W. A specific function of the fixed holding member 37 will be described later. These fixed holding members 37 may be provided on the holding plate 30 instead of being provided on the rotary cup 36, or may be directly connected to the connecting member 38. When the fixed holding member 37 is directly connected to the connection member 38, the strength of the fixed holding member 37 with respect to the horizontal force can be increased.

  A hollow rotating shaft 34 is attached to the center portion of the lower surface of the holding plate 30 (the surface opposite to the surface on which the rotating cup 36 is provided) so as to extend downward from the lower surface of the holding plate 30. A processing fluid supply pipe 40 is accommodated in the hollow portion of the rotating shaft 34. The rotating shaft 34 is supported by a bearing (not shown) and is rotated by a rotation driving unit 39 such as an electric motor. When the rotation drive unit 39 rotates the rotation shaft 34, the holding plate 30 also rotates.

  As shown in FIG. 4, the holding plate 30 is formed with three through holes (connection member through holes) 30b, and the connection member 24 coupled to the lift pin plate 20 is slidably passed through each through hole 30b. Has been. Accordingly, the connecting member 24 prohibits relative rotation between the holding plate 30 and the lift pin plate 20 and connects the holding plate 30 and the lift pin plate 20 so as to rotate integrally, while the holding plate 30 and the lift pin plate 20 are connected. Relative vertical movement is allowed. The through holes 30 b are provided at equal intervals in the circumferential direction of the holding plate 30. In addition, on the lower surface of the holding plate 30, three cylindrical housing members 32 are provided at the positions of the respective through holes 30 b. Each accommodating member 32 extends downward from the lower surface of the holding plate 30, and accommodates each connecting member 24 extending downward from the lower surface of the lift pin plate 20. These accommodating members 32 are provided at equal intervals in the circumferential direction in the vicinity of the peripheral edge portion of the holding plate 30.

  Each connecting member 24 extending downward from the lower surface of the lift pin plate 20 and each accommodating member 32 extending downward from the lower surface of the holding plate 30 will be described in more detail with reference to FIG. As shown in FIG. 5, the inner diameter of each cylindrical accommodating member 32 is slightly larger than the outer diameter of each connecting member 24, and each cylindrical member 32 extends in the longitudinal direction (vertical direction in FIG. 5). The connecting member 24 can move within each housing member 32. As shown in FIG. 2A, when the lift pin plate 20 is in the lowered position, each connection member 24 is completely accommodated in each accommodation member 32. On the other hand, as shown in FIG. 2B, when the lift pin plate 20 is in the raised position, each connection member 24 is in a state where only a part of the connection member 24 is accommodated in each accommodation member 32, and each connection member 24 is attached to the holding plate 30. It passes through the formed through hole 30b and protrudes upward from the holding plate 30. When the lift pin plate 20 is in the lowered position, each connecting member 24 is housed in each housing member 32.

  As shown in FIG. 5, the spring 26 is housed in a compressed state in the hollow portion of each housing member 32. The spring 26 has a lower end attached to the lower end portion of the connection member 24 and an upper end attached to the lower surface of the holding plate 30 in the vicinity of the through hole 30b. For this reason, the connection member 24 is urged downward by the spring 26. That is, a downward force (a force to move downward from the holding plate 30) is always applied to the connecting member 24 by a force that the spring 26 tries to return to the original state from the compressed state.

  As shown in FIGS. 2A and 2B, an outer cup 56 is provided outside the rotating cup 36, and the holding plate 30 and the rotating cup 36 are covered with the outer cup 56. A drainage pipe 58 is connected to the outer cup 56 and is used for cleaning the wafer W. The cleaning liquid splashed outward from the wafer W by the rotation of the wafer W and received by the outer cup 56 is The liquid is discharged through the drain pipe 58.

  As shown in FIGS. 2A and 2B, the holding plate 30 is provided with a movable substrate holding member 31 for supporting the wafer W from the side. The substrate holding member 31 holds the wafer W from the side when the lift pin plate 20 is in the lowered position as shown in FIG. 2A, while the wafer holds when the lift pin plate 20 is in the raised position as shown in FIG. 2B. Separate from W. More specifically, as shown in FIG. 2C, the wafer W is held by a substrate holding member 31 and two fixed holding members (fixed substrate holding members) 37 when the wafer W is cleaned. At this time, the substrate holding member 31 presses the wafer W toward the fixed holding member 37. 2C, a force is applied to the wafer W in the left direction in FIG. 2C by the substrate holding member 31, whereby the wafer W is pressed against the two fixed holding members 37. Thus, when the wafer W is held from the side by using both the movable substrate holding member 31 and the fixed holding member 37, only the plurality of movable substrate holding members 31 are used without using the fixed holding member 37. As compared with the case where the wafer W is used and held from the side, the number of members that move (advance and retreat) relative to the wafer W can be reduced to one, so that the wafer W can be held with a simpler configuration. It can be carried out.

  Details of the configuration of the substrate holding member 31 will be described below with reference to FIGS. 6 is a view showing a state in which the lift pin plate 20 is moving from the raised position as shown in FIG. 2B toward the lowered position as shown in FIG. 2A, and FIG. 7 is a view from the state shown in FIG. FIG. 8 is a diagram illustrating a state when the lift pin plate 20 is moved downward. FIG. 8 is a diagram illustrating a state where the lift pin plate 20 is further moved downward from the state illustrated in FIG. 6 and the lift pin plate 20 is in a lowered position as illustrated in FIG. It is a figure which shows a state when it arrives.

  As shown in FIGS. 6 to 8, the substrate holding member 31 is pivotally supported by the holding plate 30 via a shaft 31a. More specifically, as shown in FIGS. 6 to 8, a bearing portion 33 is attached to the holding plate 30, and the shaft 31 a is received in a bearing hole 33 a provided in the bearing portion 33. The bearing hole 33a is a long hole extending in the horizontal direction, and the shaft 31a of the substrate holding member 31 can move in the horizontal direction along the bearing hole 33a. In this way, the substrate holding member 31 can swing around the shaft 31 a received in the bearing hole 33 a of the bearing portion 33.

  A spring member 31 d such as a torsion spring is wound around the shaft 31 a of the substrate holding member 31. The spring member 31d biases the substrate holding member 31 with a force that rotates the substrate holding member 31 in the clockwise direction in FIGS. 6 to 8 about the shaft 31a. As a result, when no force is applied to the substrate holding member 31, the substrate holding member 31 is inclined with respect to the holding plate 30, as shown in FIG. A substrate holding portion 31 b (described later) for holding from the side is in a state of being away from the center of the holding plate 30.

  Further, a linear portion extends from the spring member 31 d wound around the shaft 31 a, and this linear portion is locked to the inner wall surface 33 b of the bearing portion 33 so that the shaft 31 a is centered on the holding plate 30. Push it back. Thus, the shaft 31a is constantly pressed toward the center of the holding plate 30 (that is, toward the left in FIGS. 6 to 8) by the linear portion of the spring member 31d. For this reason, when the wafer W having a relatively small diameter is supported by the movable substrate holding member 31 and the fixed holding member 37, the shaft 31a has a holding plate in the bearing hole 33a as shown in FIGS. It is located at a position close to the center of 30 (that is, a position on the left side in FIGS. 6 to 8). On the other hand, when the wafer W having a relatively large diameter is supported by the substrate holding member 31 and the fixed holding member 37, the shaft 31a is moved along the bearing hole 33a against the force of the linear portion of the spring member 31d. It moves rightward from the position shown in FIG. Here, the size of the wafer diameter means the size of the wafer within an allowable dimensional error.

  The substrate holding member 31 includes a substrate holding portion 31b that holds the wafer W from the side, and a pressed member 31c that is provided on the opposite side of the substrate holding portion 31b with respect to the shaft 31a. The member to be pressed 31c is provided between the lift pin plate 20 and the holding plate 30, and the member to be pressed 31c has the lift pin plate 20 in the lowered position or a position in the vicinity thereof as shown in FIGS. Sometimes it is pressed downward by the lower surface of the lift pin plate 20.

  As shown in FIGS. 6 to 8, when the lift pin plate 20 is moved from the raised position to the lowered position, the substrate holding member 31 is pressed downward by the pressed member 31 c by the lower surface of the lift pin plate 20. It rotates about the shaft 31a in the counterclockwise direction (arrow direction in FIG. 6) of FIG. Then, the substrate holding member 31 rotates about the shaft 31a, so that the substrate holding portion 31b moves toward the wafer W from the side of the wafer W. Thus, when the lift pin plate 20 reaches the lowered position, the wafer W is held from the side by the substrate holding member 31 as shown in FIG. Here, as shown in FIG. 8, when the wafer W is held from the side by the substrate holding member 31, the wafer W is separated upward from the tip of the lift pin 22 and floats upward from the lift pin 22. Become. Further, as described above, depending on the size of the wafer W, the shaft 31a moves rightward from the position shown in FIG. 6 or the like along the bearing hole 33a against the force of the linear portion of the spring member 31d. There is also. For this reason, even when a relatively large wafer W is held by the substrate holding member 31 and the fixed holding member 37, the substrate holding member 31 can move in the horizontal direction. The wafer W can be held from the side without being damaged.

  Since the substrate holding member 31 as described above is provided in the substrate cleaning apparatus 10, there is no need to provide a dedicated drive mechanism (power source) for driving the substrate holding member 31, and an elevating drive unit 50 described later. Thus, the wafer W can be held / released by the substrate holding member 31 of the holding plate 30 simply by lifting and lowering the lift pin plate 20, so that the configuration of the substrate cleaning apparatus 10 can be simplified. In addition, a time lag can be prevented from occurring between the lifting / lowering timing of the lift pin plate 20 and the movement timing of the substrate holding member 31, and throughput can be improved.

2A and 2B, the processing fluid supply pipe 40 is provided so as to pass through the through hole 20a of the lift pin plate 20 and the through hole 30a of the holding plate 30, respectively. The processing fluid supply pipe 40 does not rotate even when the lift pin plate 20 or the holding plate 30 rotates. In the processing fluid supply pipe 40, a plurality of, in this example, six fluid supply paths, that is, first fluid supply paths (also referred to as “sulfuric acid supply paths”) 40a, for supplying the processing fluid to the V-shaped nozzle 60, are provided. Second fluid supply path (also referred to as “hydrogen peroxide solution supply path”) 40b, third fluid supply path (also referred to as “first DIW supply path”) 40c, and fourth fluid supply path (“first fluid supply path”) of also referred to as N ₂ gas supply passage ") 40d, a fifth fluid supply passage (also referred to as" second DIW supply path ") 40e, both the fluid supply passage 6 (" second N ₂ gas supply passage " 40f) is provided to extend in the vertical direction. A V-shaped nozzle 60, which will be described in detail later, is attached to the upper end of the processing fluid supply pipe 40.

As shown in FIG. 2A, the first to sixth fluid supply paths 40a, 40b, 40c, 40d, 40e, and 40f in the processing fluid supply pipe 40 correspond to the corresponding first to sixth fluid supply mechanisms 70a, 70b, 70c, 70d, 70e, and 70f are connected.
The first fluid supply mechanism 70a is a sulfuric acid supply mechanism (hereinafter referred to as “sulfuric acid supply mechanism 70a”) for supplying sulfuric acid (H ₂ SO ₄ ), and is upstream of a pipe line 74a connected to the sulfuric acid supply source 71a. A variable throttle valve 72a and an on-off valve 73a are sequentially provided from the side.
The second fluid supply mechanism 70b is a hydrogen peroxide supply mechanism (hereinafter referred to as “hydrogen peroxide supply mechanism 70b”) that supplies hydrogen peroxide (H ₂ O ₂ ). The pipe 74b connected to the supply source 71b has a variable throttle valve 72b and an on-off valve 73b sequentially provided from the upstream side.
The third fluid supply mechanism 70c is a DIW supply mechanism (hereinafter referred to as “first DIW supply mechanism 70c”) that supplies DIW (pure water) that is a rinsing liquid, and is connected to the DIW supply source 71c. In addition, a variable throttle valve 72c and an opening / closing valve 73c are sequentially provided in the pipeline 74c from the upstream side.
The fourth fluid supply mechanism 70d is an N ₂ gas supply mechanism (hereinafter referred to as “first N ₂ gas supply mechanism 70d”) that supplies an inert gas, for example, N ₂ gas, and an N ₂ gas supply source 71d. A variable throttle valve 72d and an opening / closing valve 73d are sequentially provided from the upstream side to the pipe line 74d connected to the pipe 74d.
The fifth fluid supply mechanism 70e is a DIW supply mechanism (hereinafter referred to as “second DIW supply mechanism 70e”) that supplies DIW (pure water) that is a rinsing liquid, and is connected to the DIW supply source 71e. In addition, a variable throttle valve 72e and an opening / closing valve 73e are sequentially provided in the pipeline 74e from the upstream side.
The sixth fluid supply mechanism 70f is an N ₂ gas supply mechanism (hereinafter referred to as “second N ₂ gas supply mechanism 70f”) that supplies an inert gas, for example, N ₂ gas, and is connected to the N ₂ gas supply source 71f. A variable throttle valve 72f and an opening / closing valve 73f are sequentially provided in the pipeline 74f from the upstream side.

  In addition, the sulfuric acid supply source 71a can be comprised from the arbitrary apparatus which can pump the sulfuric acid heated from the tank with a heater, and the said tank, for example. Since the hydrogen peroxide solution is supplied at room temperature, the hydrogen peroxide solution supply source 71b can be composed of, for example, a tank and any device that can pump the hydrogen peroxide solution at room temperature from the tank. .

  As shown in FIGS. 2A, 2 </ b> B, and 9, the processing fluid supply pipe 40 is provided with a lifting drive unit 50 via a connecting member 52. The raising / lowering drive part 50 raises / lowers the process fluid supply pipe 40. That is, when the raising / lowering drive part 50 raises / lowers the connecting member 52, the processing fluid supply pipe 40 and the V-shaped nozzle 60 connected to the connecting member 52 are also raised / lowered. More specifically, the elevating drive unit 50 moves the processing fluid supply pipe 40 and the V-shaped nozzle 60 up and down between a lowered position as shown in FIG. 2A and an elevated position as shown in FIG. 2B.

  As shown in FIG. 9, a first interlocking member 44 is connected to the processing fluid supply pipe 40. Three first bar-like second interlocking members 46 are connected to the first interlocking member 44 so as to extend upward from the first interlocking member 44. Here, each second interlocking member 46 is provided corresponding to each connecting member 24 provided so as to extend downward from the lower surface of the lift pin plate 20, and the outer diameter of each rod-like second interlocking member 46. Is smaller than the inner diameter of the cylindrical housing member 32. More specifically, each second interlocking member 46 is provided so as to contact the bottom surface of each connecting member 24, and each second interlocking member 46 is provided in each housing member 32 as shown in FIG. Thus, each connecting member 24 can be pushed upward.

  That is, in the state shown in FIG. 2A, when the elevation drive unit 50 moves the processing fluid supply pipe 40 upward, the first interlocking member 44 connected to the processing fluid supply pipe 40 and each second interlocking function. The member 46 also moves upward, and each second interlocking member 46 pushes up each connection member 24 upward in each housing member 32. As a result, the lift pin plate 20 also moves upward in conjunction with the processing fluid supply pipe 40, and as shown in FIG. 2B, the lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 reach their raised positions. It will be. On the other hand, in the state shown in FIG. 2B, when the elevation drive unit 50 moves the processing fluid supply pipe 40 downward, the connection member 24 is always lowered by the force of the spring 26 provided in the housing member 32. Therefore, when each second interlocking member 46 moves downward, each connection member 24 also moves downward so that its lower surface comes into contact with the upper end portion of each second interlocking member 46. . In this way, as shown in FIG. 2A, the lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 reach their lowered positions.

  As shown in FIG. 2A, the lift pin plate 20 is adjacent to the holding plate 30 when in the lowered position. Specifically, in the illustrated example, the lift pin plate 20 is placed on the holding plate 30 and supported by the holding plate 30. On the other hand, as shown in FIG. 2B, when the lift pin plate 20 is in the raised position, the lift pin plate 20 is separated upward from the holding plate 30 to transfer the wafer W onto the lift pins 22 and take out the wafer W from the lift pins 22. Will be able to.

  Thus, the first interlocking member 44 and the three second interlocking members 46 constitute an interlocking mechanism that interlocks the lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 in an integrated manner. Yes. Further, the lift pin plate 20, the processing fluid supply pipe 40 and the V-shaped nozzle 60 are moved up and down in conjunction with the first interlocking member 44, the three second interlocking members 46, the lifting drive unit 50, and the connecting member 52, A lifting mechanism that lifts and lowers the lift pin plate 20, the processing fluid supply pipe 40 and the V-shaped nozzle 60 relative to the holding plate 30 is configured.

  Next, the configuration of the V-shaped nozzle 60 will be described with reference to FIGS. 2A, 2B, 9 and 10. FIG. The V-shaped nozzle 60 has a central portion 60C, and a first rod-shaped portion 60A and a second rod-shaped portion 60B that are connected to the central portion 60C and arranged in a V-shape. In the central portion 60 </ b> C, the V-shaped nozzle 60 is attached to the upper end of the processing fluid supply pipe 40. The central portion 60 </ b> C also serves as a cover member that covers the through hole 20 a of the lift pin plate 20. The rod-shaped portions 60A and 60B extend from the central portion 60C radially outward of the lift pin plate 20, that is, radially outward of the wafer W, so that they do not interfere with the lift pins 22 during processing (the V-shaped nozzle 60 does not rotate during processing but the lift pin plate 20 Rotates) and terminates slightly before the virtual circumference where the lift pin 22 is located.

  In the embodiment shown in FIG. 10A, the first rod-shaped portion 60A and the second rod-shaped portion 60B form an angle of, for example, 30 degrees (not limited to this angle). Therefore, by positioning the lift pin plate 20 and the holding plate 30 at predetermined angular positions, the first rod-like portion 60A and the second rod-like portion 60B are aligned so as to extend toward the lift pins 22a and 22a ′, respectively. Can do. As can be understood from FIG. 2B, since the space between the lower surface of the wafer W and the V-shaped nozzle 60 is very narrow, from the viewpoint of avoiding the collision between the transfer arm 104 and the V-shaped nozzle 60, It is preferable that the transfer arm 104 and the V-shaped nozzle 60 do not overlap in plan view. If the positional relationship between the lift pins 22a and 22a ′ and the first rod-like portion 60A and the second rod-like portion 60B as shown in FIG. 10A is secured, the transport arm 104 is moved to four lift pins as shown in FIG. 10B. And it becomes easy to enter the lower side of the wafer so as not to collide with the V-shaped nozzle 60. As shown in FIG. 10B, the bifurcated tip of the transfer arm 104 is outside the lift pins 22a and 22a ′ and inside the lift pins 22b and 22b ′ when the transfer arm 104 enters the lower side of the wafer. Pass through. The above is one of the advantages that can be obtained by arranging the first rod-shaped portion 60A and the second rod-shaped portion 60B in a V shape.

  In particular, as shown in FIGS. 11 (a) and 12 (a), the rod-like portions 60A and 60B have a cross-sectional shape similar to an airfoil. In this liquid processing apparatus, the wafer W is rotated in the direction of the arrow R shown in FIGS. 10, 11A, and 12A with respect to the rod-shaped portions 60A and 60B. At this time, an airflow in the direction of arrow R is generated between the lower surface of the wafer W and the lift pin plate 20. The flow of the liquid is improved by the airflow passing above the rod-shaped portions 60A and 60B having an airfoil cross section. Specifically, the airflow is rectified so as to increase the flow velocity due to the squeezing effect and toward the lower surface of the wafer W when passing between the back surfaces of the rod-shaped portions 60A and 60B and the wafer W. As described above, the airflow influenced by the rod-shaped portions 60A and 60B helps the processing liquid (for example, chemical solution) colliding with the lower surface of the wafer W to smoothly diffuse along the lower surface of the wafer W. Further, since the rod-shaped portions 60A and 60B have an airfoil cross section, vibration of the rod-shaped portions 60A and 60B due to the influence of the airflow is suppressed to a minimum.

The V-shaped nozzle 60 has a plurality of first discharge ports 61 arranged between a position facing the center of the wafer W and a position facing the peripheral edge of the wafer W. The first discharge port 61 is for discharging heated SPM (mixed solution of sulfuric acid and hydrogen peroxide solution) toward the wafer W. The first discharge ports 61 are arranged in a line along the longitudinal direction of the first rod-shaped portion 60A in a section from the central portion 60C to the tip of the first rod-shaped portion 60A. Further, the V-shaped nozzle 60 has a plurality of second discharge ports 62 arranged between a position facing the central portion of the wafer W and a position facing the peripheral edge of the wafer W. The second discharge port 62 is for discharging only DIW (pure water) toward the wafer W or discharging a two-fluid spray composed of a mixed fluid of DIW and N ₂ gas toward the wafer W. The second discharge ports 62 are arranged in a line along the longitudinal direction of the second rod-shaped portion 60B in the section from the central portion 60C to the tip of the second rod-shaped portion 60B. Further, the V-shaped nozzle 60 has one third discharge port 63 at the central portion 60C. The third discharge port 63 is for discharging DIW toward the center of the wafer W. Furthermore, the V-shaped nozzle 60 has one fourth discharge port 64 at the central portion 60C. The fourth discharge port 64 is for discharging N ₂ gas toward the center of the wafer W. The fourth discharge port 64 is located almost directly below the center of the wafer W held on the holding plate 30.

  The first and second discharge ports 61 and 62 and the discharge passages (67a, 67b, 68a, 68b) connected to the first and second discharge ports 61 and 62 are considerably small (about 0.3 to 0.5 mm in diameter). When passing through the outlet and the discharge path, it is charged by friction (particularly in the discharge port and the discharge path through which non-conductive DIW flows). In order to prevent this, it is desirable to form the V-shaped nozzle 60 with a conductive material, for example, PFA containing carbon fiber.

  As shown in FIG. 14, the processing fluid supply pipe 40 has a head portion 41 having an enlarged diameter at the upper end thereof. The central portion 60C of the V-shaped nozzle 60 is connected to the head 41 of the processing fluid supply pipe 40 by a screw (not shown).

As shown in FIG. 14, when the central portion 60C of the V-shaped nozzle 60 and the head portion 41 of the processing fluid supply pipe 40 are connected, a second DIW supply path 40e extending in the vertical direction in the processing fluid supply pipe 40, A discharge passage 63a extending in the vertical direction communicates with the central portion 60C. As a result, the DIW sent via the second DIW supply path 40e can be discharged from the third discharge port 63 toward the lower surface of the wafer W. The third discharge port 63 is formed in a shape that ensures that DIW discharged from the third discharge port 63 reliably reaches the center Wc on the lower surface of the wafer W. When the central portion 60C and the head portion 41 are connected, the second N ₂ gas supply path 40f extending in the vertical direction in the processing fluid supply pipe 40 and the discharge path 64a extending in the vertical direction in the central portion 60C communicate with each other. To do. Thereby, it becomes possible to eject the N ₂ gas sent through the second N ₂ gas supply passage 40f toward the fourth discharge port 64 to the lower surface of the wafer W.

When the central portion 60C and the head portion 41 are connected, as shown in FIG. 13, the first DIW supply passage 40c extending in the vertical direction in the processing fluid supply pipe 40 and the V-shaped nozzle 60 are formed. A fluid passage (DIW passage) 65 b communicates with the first N ₂ supply passage 40 d extending in the vertical direction in the processing fluid supply pipe 40 and a fluid passage (N ₂ passage) 66 b formed in the V-shaped nozzle 60. And communicate. As indicated by broken lines in FIG. 10, the DIW passage 65b and the N ₂ passage 66b extend along the longitudinal direction of the rod-shaped portion 60B from the central portion 60C of the V-shaped nozzle 60 to the tip of the second rod-shaped portion 60B. , Extending horizontally and parallel to each other. Although not shown in detail, when the central portion 60C and the head portion 41 are connected, the sulfuric acid supply passage that extends in the vertical direction in the processing fluid supply pipe 40 in the same manner as that shown in FIG. 40c and a fluid passage (sulfuric acid passage) 65a formed in the V-shaped nozzle 60 communicate with each other, and the hydrogen peroxide solution supply passage 40b extending in the vertical direction in the processing fluid supply pipe 40 and the V-shaped nozzle 60 are formed. The fluid passage (hydrogen peroxide solution passage) 66a communicated. As shown by a broken line in FIG. 10, the sulfuric acid passage 65a and the hydrogen peroxide water passage 66a extend from the central portion 60C of the V-shaped nozzle 60 to the tip of the first rod-like portion 60A. It extends horizontally and parallel to each other along the longitudinal direction.

As shown in FIG. 11A, in the central portion 60C and the first rod-shaped portion 60A of the V-shaped nozzle 60, one sulfuric acid discharge passage 67a is formed in the sulfuric acid passage 65a corresponding to each discharge port 61. One hydrogen peroxide water discharge path 68a is connected to the hydrogen oxide water path 66a. The hydrogen peroxide solution passage 68a joins the sulfuric acid discharge passage 67a at a position before the discharge port 61 where the sulfuric acid discharge passage 67a ends. Accordingly, SPM formed by mixing sulfuric acid and hydrogen peroxide solution is discharged from each discharge port 61. As shown in FIG. 11B, each discharge port 61 is arranged such that the discharge direction of the SPM discharged therefrom is inclined in the rotation direction R of the wafer W, in other words, the SPM discharged from each discharge port 61. It is preferable that the vector V ₆₁ indicating the discharge direction is configured to have a component in the wafer rotation direction R. Thereby, it is possible to prevent the SPM that has collided with the lower surface of the wafer W from being repelled (splashing) by the wafer W, and most of the discharged SPM can be used for processing the wafer W without wasting the discharged SPM. It can be used effectively. The SPM discharge direction has a component in the rotation direction of the wafer W, thereby reducing the SPM that has once reached the wafer W from dropping from the wafer W and reattaching to the rod-shaped portion 60A of the V-shaped nozzle 60. Can do. This is because the fall of the SPM from the wafer W is likely to occur immediately after and immediately after the SPM reaches the wafer W. In most of the plurality of discharge ports 61, a vector V ₆₁ indicating the discharge direction of SPM discharged from the discharge port 61 has a component in the wafer rotation direction R, and the vector V ₆₁ is the longitudinal length of the first rod-shaped portion 60A. It is preferable to face the direction orthogonal to the direction. However, one discharge port (61 ″) located at the outermost radial direction or several discharge ports 61 including the discharge port 61 includes a vector V ₆₁ indicating the discharge direction of the SPM discharged from the discharge port 61 in FIG. 10A. As indicated by the arrow with V _61e, it may have a component that faces outward in the radial direction, whereby the reacted SPM is smoothly detached from the wafer W. One or several discharge ports 61, particularly one discharge port 61 ′ located at the innermost radial direction, has a vector V ₆₁ indicating the discharge direction of the SPM discharged therefrom, which is denoted by reference numeral V _{61c in} FIG. 10A. As indicated by an arrow marked with, it is desirable to face the center of the wafer W. By doing so, it is possible to prevent an unprocessed region from occurring at the center of the wafer W.

As shown in FIG. 12A, in the central portion 60C and the second rod-shaped portion 60B of the V-shaped nozzle 60, one DIW discharge passage 67b is provided in the DIW passage 65b corresponding to each discharge port 62. One N ₂ discharge path 68b is connected to each of the _two paths 66b. The DIW discharge path 67b has a curved turning surface 67c in the vicinity of the discharge port 62 where the DIW discharge path 67b terminates, and the N ₂ passage 66b joins the DIW passage 65b in the vicinity of the lower end of the turning surface 67c. ing. That is, the N ₂ passage 66 b terminates at the discharge port 62, and the end of the N ₂ passage 66 b faces the discharge port 62. When DIW is flowed from the DIW passage 65b through the DIW discharge passage 67b without flowing N ₂ or in a small amount, DIW is turned by the turning surface 67c. As a result, as shown in FIG. The discharge direction of DIW discharged from the discharge port 62 is inclined in the rotation direction R of the wafer W. In other words, the vector V ₆₂ indicating the discharge direction of DIW discharged from each discharge port 62 has a component in the wafer rotation direction R.

Further, when N ₂ gas flows from the N ₂ passage 66b through the N ₂ discharge passage 68b and DIW flows from the DIW passage 65b through the DIW discharge passage 67b, the DIW discharge passage 67b and the N ₂ discharge passage 68b The DIW flow and the N ₂ gas flow collide at the confluence of the two and are mixed to form a mist-like mixed fluid consisting of DIW and N ₂ gas, that is, a two-fluid spray (droplet). Since DIW is mixed with N ₂ gas before reaching the turning surface 67c, the two-fluid spray discharged from the discharge port 62 is fan-shaped as shown in FIG. The liquid is discharged upward while spreading. In this case, the vector V _{62 ′} (see FIG. 12C) indicating the discharge direction (main direction) of the two-fluid spray is substantially upward in the vertical direction (that is, the discharge direction of the two-fluid spray is the lower surface of the wafer W). This component is preferable because the cleaning effect by the two-fluid spray depends on the collision energy of the two-fluid spray. It is also preferable that the vector V _{62 ′} indicating the discharge direction (main direction) of the two-fluid spray has a component in the direction opposite to the rotation direction R of the wafer W. Similarly to the SPM discharge, one discharge port 62 ″ located at the outermost radial direction or several discharge ports 62 including this are a vector indicating the discharge direction of DIW or two-fluid spray discharged therefrom. V ₆₂ (V _{62 ′} ) preferably has a component facing radially outward, as indicated by an arrow _labeled V _61e in FIG. The discharge port 62 ′ or several discharge ports 62 including the discharge port 62 ′, in particular, the one discharge port 62 ′ located at the innermost radial direction is a vector V ₆₂ indicating the discharge direction of DIW or two-fluid spray discharged therefrom. 10A, it is desirable that the center of the wafer W be directed as indicated by an arrow _labeled V _62c in Fig. 10A, in particular, the two-fluid spray is an impact applied to the wafer W by the two-fluid spray as described above. Since the wafer W is cleaned by impact energy, the two-fluid spray discharged from any one of the discharge ports 62 is directly sprayed on all regions of the processing surface (lower surface) of the wafer W. It is desirable to provide an outlet 62.

  As shown in FIG. 12A, a plurality of DIW discharge ports 69 are provided on the bottom wall of the V-shaped nozzle 60 that divides the DIW passage 65b. The DIW discharge ports 69 are provided at predetermined intervals over the entire length of the DIW passage 65b. DIW discharged from the DIW discharge port 69, that is, the apparatus cleaning liquid, is discharged toward the surface of the lift pin plate 22, flows toward the outside of the lift pin plate 22 by centrifugal force, and scatters outward from the lift pin plate 22. Along with this DIW flow, unnecessary substances such as SPM on the surface of the lift pin plate 22 and reaction products of the SPM and the resist are washed away. In order to supply DIW to the DIW discharge port 69, a DIW passage independent of the DIW passage 65b may be provided in the V-shaped nozzle 60.

  A plurality of ellipses shown in FIG. 15 are regions on the lower surface of the wafer W that are covered with the processing fluid at the moment when the processing fluid (SPM, DIW) discharged from the discharge ports 61 and 62 reaches the lower surface of the wafer W. (Hereinafter also referred to as “spot”) is schematically shown. After the processing fluid reaches the lower surface of the wafer W, the processing fluid spreads on the lower surface of the wafer W according to factors such as the centrifugal force generated by the rotation of the wafer W and the discharge pressure of the processing fluid from the discharge ports 61 and 62. Since the processing fluid is discharged from the discharge ports 61 and 62 obliquely upward in the tangential direction of the circle in plan view, the spot becomes an ellipse. However, in the case of a two-fluid spray, it becomes a generally circular shape with a relatively large diameter. The distance P between the centers of the spots is equal to the arrangement pitch of the discharge ports 61 and 62. Further, since the processing fluid diffuses after the discharge and before reaching the wafer, the length B of the elliptical short axis (the short axis coincides with the arrangement direction of the discharge ports) is larger than the diameter of the discharge ports 61 and 62. The major axis length A of the ellipse is much larger than the diameter of the discharge port 61. When the two-fluid spray is ejected, the collision energy given to the wafer W by the two-fluid spray is important. Therefore, it is desirable that the overlapping portion L is generated in the adjacent spot. Therefore, the ejection ports 61 and 62 are designed as such. It is desirable to do. Further, when discharging a chemical solution such as SPM, it is preferable to design the discharge ports 61 and 62 so that an overlapping portion having a predetermined length L is generated in an adjacent spot from the viewpoint of processing uniformity. However, if the chemicals that form adjacent spots are fused immediately, there may be no overlap between adjacent spots.

  As shown in FIG. 10, the V-shaped nozzle 60 has a first rod-shaped portion 60A and a second rod-shaped portion 60B arranged in a V-shape, but a discharge port 61 for discharging SPM is provided. The provided first rod-like portion 60A is advanced (rotated) by a small acute angle (here, 30 degrees) in the wafer rotation direction R from the second rod-like portion 60B for discharging the DIW or the two-fluid spray containing DIW. )). This arrangement is preferable for maintaining the cleanliness of the V-shaped nozzle 60. That is, in the space on the lower surface side of the wafer, an air flow that travels in the wafer rotation direction R is generated, and the liquid discharged from the discharge ports 61 and 62 flows along the air flow. A part of the liquid discharged from the discharge ports 61 and 62 and reaching the wafer W falls from the wafer W due to gravity. If the positions of the first rod-shaped portion 60A and the second rod-shaped portion 60B are opposite to those shown in the figure, the SPM and the reaction product discharged from the first rod-shaped portion 60A are DIW or two. The possibility of adhering to the second rod-shaped portion 60B for discharging the fluid spray increases. It is not preferable that the second rod-like portion 60B supplying the rinsing fluid is contaminated with SPM and reaction products. On the other hand, when the first rod-like portion 60A and the second rod-like portion 60B are in the illustrated positional relationship, the first rod-like portion is discharged by the two-fluid spray containing DIW or DIW discharged from the second rod-like portion 60B. Portion 60A can be cleaned. From the above, it is advantageous that the first rod-shaped portion 60A is located at a position advanced from the second rod-shaped portion 60B by as small an angle as possible in the wafer rotation direction R (30 degrees in the illustrated example). It is obvious that the second rod-shaped portion 60B is advantageously located at a position advanced from the first rod-shaped portion 60A by as much an angle as possible in the wafer rotation direction R (330 degrees in the illustrated example).

  The substrate cleaning apparatus 10 has a controller 100 that controls the overall operation of the substrate cleaning apparatus 10. The controller 100 operates all the functional components of the substrate cleaning apparatus 10 (for example, the rotation drive unit 39, the elevating drive unit 50, the first to sixth fluid supply mechanisms 70a to 70f, the power supply device for the LED lamp 83 described later, and the like). To control. The controller 100 can be realized by, for example, a general-purpose computer as hardware and a program (such as an apparatus control program and a processing recipe) for operating the computer as software. The software is stored in a storage medium such as a hard disk drive fixedly provided in the computer, or is stored in a storage medium that is detachably set in the computer such as a CDROM, DVD, or flash memory. Such a storage medium is indicated by reference numeral 101. The processor 102 calls and executes a predetermined processing recipe from the storage medium 101 based on an instruction from a user interface (not shown) as necessary, whereby each functional component of the substrate cleaning apparatus 10 is controlled under the control of the controller 100. It operates to perform a predetermined process. The controller 100 may be a system controller that controls the entire liquid processing system shown in FIG.

  Next, the cover member 80 will be described. As shown in FIG. 2A, the cover member 80 has a disk-shaped main body 81 having a diameter larger than at least the diameter of the wafer W. The disc-shaped main body 81 preferably has a shape and dimension sufficient to completely cover the upper opening of the rotating cup 36, and has a shape and dimension sufficient to completely cover the upper opening of the outer cup 50. More preferably, it has. In the illustrated embodiment, the cover member 80 is formed in a disc shape having a diameter slightly larger than the diameter of the upper opening of the outer cup 50. A hole 87 that penetrates the cover member 80 in the vertical direction is provided at the center of the cover member 80.

  As schematically shown in FIG. 2A, an LED lamp 83 for heating the wafer W is provided inside the cover member 80. In the illustrated embodiment, one LED lamp array having a plurality of LED lamps 83 is provided. As the LED lamp 83, a lamp that emits light having a wavelength suitable for heating the wafer W, specifically, light having a wavelength of, for example, 880 nm is used. The LED lamp 83 is well protected by being covered with a cover 84 made of quartz, which transmits light with a wavelength of 880 nm well and has high corrosion resistance. FIG. 2A shows an example in which one LED lamp array having a size approximately equal to the size of the wafer W is provided. However, the present invention is not limited to this, and the position facing the center of the wafer is not limited thereto. 1 or a plurality of LED lamp arrays are provided, one or a plurality of LED lamp arrays are provided at a position facing the wafer peripheral portion, and one or a plurality of LED lamp arrays are disposed at a position facing the wafer intermediate portion between the wafer central portion and the wafer peripheral portion. A plurality of LED lamp arrays may be provided. In this case, temperature control can be performed for each part of the wafer W (so-called zone control) by individually controlling each of these LED lamp arrays. Since the outer peripheral portion of the wafer W tends to be easily cooled by the air flow generated by the rotation of the wafer W, it is preferable to increase the number of LED outputs or the number of LED lamps (the number of light emitting elements) as the outer peripheral portion. Then, the entire surface of the wafer W can be heated uniformly.

  Above the LED lamp 83, a refrigerant passage 82a is provided inside the main body 81 in order to cool and protect the LED lamp 83 that is vulnerable to heat. The refrigerant passage 82a can be arranged in a spiral shape or a concentric shape in a plan view. A refrigerant supply pipe 82b connected to a refrigerant supply source (for example, a cooling water supply source) 82e (CM) is connected to the refrigerant passage 82a, and the variable throttle valve 82d, An on-off valve 82c is interposed. The refrigerant passage 82a is connected to a refrigerant discharge pipe (not shown) for discharging the refrigerant heated by heat exchange to the refrigerant passage 82a. The LED lamp 83 is supplied with power by a power supply device 85b via a cable 85a.

  An elevating drive mechanism 86 is provided to move the cover member 80 up and down. By driving the elevating drive mechanism 86, a “processing position” positioned close to the wafer W and directly above the wafer W is provided. 2B, the cover member 80 is placed between the “standby position” (a position further above the wafer W shown by the two-dot chain line in FIG. 2B) far from the wafer W so as not to hinder the loading / unloading operation of the wafer W shown in FIG. 2B. Can be moved. The raising / lowering drive mechanism 86 includes an arm 86a connected to the center of the upper surface of the cover member 80, and an air cylinder 86b having a cylinder rod whose upper end is connected to the arm 86a.

  Next, a series of cleaning processing steps for removing an unnecessary resist film on the wafer surface using the substrate cleaning apparatus 10 described above will be described.

<Wafer loading and installation process>
First, the lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 are positioned at the raised position as shown in FIG. 2B by the lifting mechanism. Next, as shown by a two-dot chain line in FIG. 2B, the wafer W is transferred from the outside of the substrate cleaning apparatus 10 to the substrate cleaning apparatus 10 by the transfer arm 104, and the wafer W is placed on the lift pins 22 of the lift pin plate 20. Is done. Next, the raising / lowering drive unit 50 moves the processing fluid supply pipe 40 and the V-shaped nozzle 60 from the raised position to the lowered position. At this time, since a downward force is always applied to the connection member 24 by the force of the spring 26 provided in the housing member 32, the lift pin is interlocked with the downward movement of the processing fluid supply pipe 40. The plate 20 also moves downward, and the lift pin plate 20 moves from the raised position to the lowered position. At this time, the pressed portion 31c of the substrate holding member 31 is pressed downward from the state shown in FIG. 6 by the lower surface of the lift pin plate 20, so that the substrate holding member 31 is centered on the shaft 31a in FIG. Rotates counterclockwise. In this way, the substrate holding portion 31b of the substrate holding member 31 moves from the side of the wafer W toward the wafer W (see FIG. 7), and the wafer W is held from the side by the substrate holding member 31 (see FIG. 7). (See FIG. 8). At this time, the wafer W held from the side by the substrate holding member 31 is separated upward from the lift pins 22. The wafer W is placed in the substrate cleaning apparatus 10 so that its “front surface” (surface on which a pattern is formed) is a “lower surface” and its “back surface” (surface on which no pattern is formed) is an “upper surface”. Before carrying in, it is turned over by the reverser 105 (refer FIG. 1), and is hold | maintained by the holding plate 30 in this state. In this specification, the term “upper surface (lower surface)” is simply used to mean a surface facing upward (downward) at a certain point in time.

<SPM cleaning process>
Next, as shown in FIG. 2A, the cover member 80 that has been waiting at the upper standby position is lowered and moved to a processing position that covers the upper portion of the wafer W in the vicinity of the wafer W. In this state, the holding plate 30 is then rotated by the rotation drive unit 39. At this time, the connecting members 24 provided so as to extend downward from the lower surface of the lift pin plate 20 are accommodated in the receiving members 32 provided so as to extend downward from the lower surface of the holding plate 30. When the holding plate 30 rotates, the lift pin plate 20 also rotates in conjunction with it, and the wafer W also rotates. At this time, the processing fluid supply pipe 40 and the V-shaped nozzle 60 connected thereto remain stopped without rotating. Simultaneously with or after the start of rotation of the wafer, the LED lamp 83 of the cover member 80 is turned on to heat the wafer W from the back surface (device non-formation surface), that is, the top surface of the wafer W. At this time, for example, the wafer W is heated to about 200 ° C. When the temperature of the wafer W rises to a predetermined temperature, sulfuric acid heated to about 150 ° C. is supplied from the sulfuric acid supply mechanism 70a to the sulfuric acid supply path 40a, and the normal temperature is supplied from the hydrogen peroxide solution supply mechanism 70b to the hydrogen peroxide solution supply path 40b. Supply hydrogen peroxide water. As shown in FIG. 11B, the supplied sulfuric acid and hydrogen peroxide solution are mixed immediately before the discharge port 61 and discharged toward the lower surface of the wafer W as SPM. The temperature rises due to reaction heat when sulfuric acid and hydrogen peroxide are mixed. The temperature of SPM discharged from the discharge port 61 is about 180 ° C. The resist film on the wafer W is lifted off (peeled) by the supplied SPM. In addition, since the wafer temperature is lowered when the SPM having a temperature lower than the wafer temperature is applied to the wafer W, it is preferable to discharge the SPM intermittently in order to prevent the wafer temperature from being lowered. The removed resist film and reaction product flow together with the SPM radially outward on the lower surface of the wafer W by centrifugal force, flow out to the outside of the wafer W, are received by the rotating cup 36, and turn downward. The liquid is discharged through a drainage pipe 58 connected to the bottom of the outer cup 56. At this time, fumes are generated in the space below the lower surface of the wafer W. However, since the upper portion of the wafer W and the upper portion of the rotating cup 36 and the outer cup 56 are covered with the cover member 80, the fumes are contained in the chamber 12 above the wafer W. Does not spread. The fumes are sucked into the drain pipe 58 connected to the factory exhaust system (that is, in a slightly reduced pressure state), that is, the negative pressure space, and discharged together with the SPM waste liquid. Further, as shown in FIG. 2A, an air flow F <b> 1 is generated in the space sandwiched between the upper surface of the wafer W and the lower surface of the cover member 80 and is directed to the outside of the wafer W due to the rotation of the wafer W. Under the influence of the air flow F1, a negative pressure is generated in the vicinity of the center portion of the wafer W. Since the hole 87 is provided at the center of the cover member 80, the atmosphere above the cover member 80 (clean air) is formed in the space between the wafer W and the cover member 80 through the hole 87, that is, the atmosphere intake port. Atmosphere). The taken-in atmosphere forms an air flow F1, is turned downward by the inner peripheral surface of the rotary cup 36 (see arrow F2), and passes through a drain pipe 58 in a slightly reduced pressure state at the bottom of the outer cup 56. Discharged. The airflow indicated by the arrows F1 and F2 serves as a shield that prevents fumes filling the lower surface of the wafer W from diffusing upward from the wafer W. For this reason, it is possible to more effectively suppress the fumes from diffusing into the chamber 12. Incidentally, by connecting the supply mechanism of the inert gas such as N ₂ gas to the upper end of the bore 87, it fed the N ₂ gas to the space between the wafer W and the cover member 80, the N ₂ gas at arrows F1, F2 An airflow as shown may be formed.

<First DIW rinse step>
After performing the SPM cleaning process for a predetermined time, the discharge of SPM from the discharge port 61 is stopped, and the heating of the wafer W by the LED lamp 83 is stopped. Next, while the wafer W is continuously rotated, DIW is supplied from the second DIW supply mechanism 70e to the second DIW supply path 40e at a relatively large flow rate (for example, 1500 ml per minute). DIW is discharged toward the center of the wafer W from the discharge port 63 at 60C. The DIW flows radially outward on the lower surface of the wafer W due to centrifugal force, flows out to the outside of the wafer W, is received by the rotating cup 36, turns downward, and is connected to the bottom of the outer cup 56. 58 and discharged. SPM, resist residues, and the like remaining on the lower surface of the wafer W are washed away by DIW flowing radially outward on the lower surface of the wafer W.

<Two fluid spray process>
After the first DIW rinse step is executed for a predetermined time, the discharge of DIW from the discharge port 63 is stopped. Next, while the wafer W is continuously rotated, DIW is supplied from the first DIW supply mechanism 70c to the first DIW supply path 40c at a flow rate of, for example, about 100 to 300 ml / min, and the first N ₂ supply N ₂ gas is supplied from the mechanism 70d to the first N ₂ supply path 40c. As shown in FIG. 12C, the supplied DIW and N ₂ gas are mixed just before the discharge port 62, and a two-fluid spray (droplet) consisting of a mixed phase flow of misted DIW and N ₂ gas. ) Is discharged toward the lower surface of the wafer W. Due to the collision energy of the two-fluid spray, substances such as resist residues and particles remaining on the lower surface of the wafer are removed. The DIW constituting the two-fluid spray flows radially outward on the lower surface of the wafer W due to centrifugal force, flows out to the outside of the wafer W, is received by the rotating cup 36, turns downward, and moves to the bottom of the outer cup 56. The liquid is discharged through the connected drain pipe 58. N ₂ gas is also discharged through the drain pipe 58. This two-fluid spraying process can also be regarded as a kind of rinsing process.

<Second DIW rinse step>
After the two-fluid spray process is executed for a predetermined time, the discharge of the two-fluid spray from the discharge port 62 is stopped. Next, the second DIW rinse process is performed in the same manner as the first DIW rinse process described above while the wafer W is continuously rotated.

_{<N 2} spin drying process>
After the second DIW rinse process is executed for a predetermined time, the discharge of DIW from the discharge port 63 is stopped. Next, the N ₂ gas is supplied from the second N ₂ supply mechanism 70 f to the second N ₂ supply path 40 f while continuing to rotate the wafer W (preferably increasing the rotation speed), and the V-shaped nozzle 60. N ₂ gas is discharged toward the center of the wafer W from the discharge port 64 in the central portion 60C. Thereby, DIW remaining on the lower surface of the wafer W is shaken off by the centrifugal force, and drying is promoted by the N ₂ gas.

<Wafer unloading process>
When the N ₂ spin drying process ends, the cover member 80 is raised and returned to the standby position. Next, the lift drive unit 50 moves the processing fluid supply pipe 40 and the V-shaped nozzle 60 from the lowered position to the raised position. At this time, each second interlocking member 46 pushes up each connecting member 24 upward, so that the lift pin plate 20 also moves upward in conjunction with the upward movement of the processing fluid supply pipe 40, and the lift pin plate 20 Move from the lowered position to the raised position. At this time, due to the biasing force of the spring member 31d against the substrate holding member 31, the substrate holding member 31 rotates about the shaft 31a in the clockwise direction of FIG. 6 (the direction opposite to the arrow in FIG. 6). . Thereby, the substrate holding member 31 is separated from the wafer W laterally. When the substrate holding member 31 is laterally separated from the wafer W, the wafer W is supported from the back surface by the lift pins 22. As shown in FIG. 2B, after the lift pin plate 20, the processing fluid supply pipe 40 and the V-shaped nozzle 60 reach the raised position, the wafer W placed on the lift pins 22 is removed from the lift pins 22 by the transfer arm 104. The The wafer W taken out by the transfer arm 104 is carried out of the substrate cleaning apparatus 10, and the reverse side is reversed by the reverser 105. The cover member 80 may be returned to the standby position at an arbitrary time after the SPM cleaning process is completed.

Incidentally, the discharge passage 67a, 67b, 68a, among 68b, in the _{N 2} discharge passage 68b _{which N 2} gas flowing a gas, the supply of _{N 2} gas to the _{N 2} discharge passage 68b is shut off Sometimes, the atmosphere outside the nozzle easily enters the N ₂ discharge path 68b. In the discharge path through which the liquid flows, there is no such problem because the liquid remains in the discharge path even if the flow of the liquid to the discharge path is interrupted. For example, if the SPM atmosphere enters the N ₂ discharge path 68b, the cleanliness of the DIW-containing two-fluid spray discharged thereafter is not preferable. In order to prevent such a situation, a small amount of N ₂ gas is always passed through the N ₂ discharge path 68b (a smaller flow rate than the N ₂ gas at the time of the two-fluid spray process), and a small amount of N ₂ is discharged from the discharge port 62. ₂ gas always flows out. From the same point of view, in order to maintain the cleanliness in the discharge port 64 and the discharge passage 64a connected thereto, a small amount of N ₂ gas is always passed through the discharge passage 64a, and a small amount of N ₂ is also discharged from the discharge port 64. ₂ gas always flows out. Specifically, during the operation of the substrate cleaning apparatus (liquid processing apparatus), when the two-fluid spray process is performed, N ₂ gas is supplied to the N ₂ discharge path 68b at a flow rate required by the process. In addition, when the N ₂ spin drying process is performed, N ₂ gas is supplied to the discharge path 64a at a flow rate required by the process, and during other processes, N ₂ gas is supplied. _The N ₂ gas is supplied to the _second discharge path 68b and the discharge path 64a at a flow rate smaller than the flow rates required by the two-fluid spray process and the N ₂ spin drying process, respectively. Such flow rate control is performed by the controller 100 controlling the first and second N ₂ gas supply mechanisms 70d and 70f.

As described above, it is preferable that a small amount of N ₂ gas flows out during the operation of the substrate cleaning apparatus. However, the present invention is not limited to this, and the space on the lower surface side of the wafer W has strong acid and fume. You may perform only during the SPM washing | cleaning process used as the atmosphere satisfy | filled with.

As described above, according to the above-described embodiment, at least during the SPM cleaning process, the N ₂ gas is allowed to flow from the discharge path 64a toward the discharge port 62 for supplying the two fluids during the two-fluid spray process. Therefore, the chemical solution (SPM) can be prevented from entering the N ₂ gas discharge path 64a. For this reason, it is possible to prevent the two-fluid spray mixed with the chemical solution (SPM) from being discharged onto the wafer at the initial stage of the two-fluid spray process.

  Further, according to the above embodiment, when the resist film on the wafer W is removed by the high temperature SPM process, the processing surface of the wafer W faces downward, and the upper portion of the wafer W is provided with the LED lamp 83 for heating the wafer. A chemical solution (SPM) is supplied to the lower surface of the wafer W from a nozzle 60 which is covered with the member 80 and provided below the wafer W. Therefore, it is possible to prevent the fumes composed of the processing liquid generated under the wafer W and the gas or mist derived from the object to be processed from diffusing above the substrate. For this reason, it is possible to prevent the fumes from contaminating or corroding the chamber inner wall and the chamber components above the wafer and generating substances that cause wafer contamination. Moreover, since the wafer substrate is heated by the heater provided on the cover member, the processing can be accelerated. Further, by providing the cover member with the fume shielding function and the wafer heating function at the same time, the number of parts can be reduced. Further, in the above embodiment, the periphery of the wafer W is surrounded by the cup (outer cup 56). For this reason, a generally closed space communicating with the exhaust system is formed on the lower surface side of the wafer W, and the SPM process is performed therein, so that the fumes diffuse above the wafer, and the chamber inner wall and the chamber inner parts above the wafer. Can be more reliably prevented from being contaminated or corroded. Particularly in the above embodiment, since the upper opening of the cup is also covered by the cover member, it is possible to more reliably prevent the fume from leaking upward.

  In addition, according to the above-described embodiment, the plurality of discharge ports 61 (which are arranged along the position between the position facing the central portion of the wafer W and the position facing the peripheral edge of the substrate and discharge the same processing fluid from each of the discharge ports 61 ( 62), the lower surface of the wafer W can be processed with high in-plane uniformity.

  Further, since the nozzle 60 is configured to generate SPM by mixing sulfuric acid and hydrogen peroxide solution immediately before discharge, heat generated by mixing sulfuric acid and hydrogen peroxide solution is discharged. It occurs just before. For this reason, since sulfuric acid and hydrogen peroxide solution can be flowed at a low temperature (compared with a case where they are mixed in advance) immediately before the discharge port 61, the burden on the piping system of sulfuric acid and hydrogen peroxide solution can be reduced. it can.

  Further, since the wafer W is heated by the LED lamp that emits light of a predetermined wavelength, the temperature of the wafer W can be quickly raised.

  In the above embodiment, the lift pin plate 20, the processing fluid supply pipe 40, and the V-shaped nozzle 60 are moved up and down relatively with respect to the holding plate 30, and the lift pins 22 that support the wafer W from below. Is provided on the lift pin plate 20. Therefore, as compared with the conventional case where the through hole for passing the lift pins 22 is formed in the bottom plate and the lift pins 22 are retracted below the bottom plate through the through holes, the wafer W Thus, the cleaning liquid does not remain on the lift pins 22 after drying, thereby preventing the processing liquid from adhering to the back surface of the wafer W after the liquid processing. This is because the lift pins 22 rotate integrally with the lift pin plate 20 when the wafer W is dried. Further, when the lift pins 22 rotate integrally with the lift pin plate 20, it is possible to prevent the droplets of the processing liquid from remaining on the lift pins 22, and thereby the droplets of the processing liquid adhere to the back surface of the processed wafer W. This can be further prevented. Furthermore, the central portion 60 </ b> C of the V-shaped nozzle 60 closes the through hole 20 a of the lift pin plate 20. For this reason, it is possible to prevent the processing liquid from entering the through hole 20a through which the processing fluid supply pipe 40 passes. In the above embodiment, the processing fluid supply pipe 40 and the V-shaped nozzle 60 and the lift pin plate 20 are moved up and down integrally, so that the processing fluid supply pipe 40 and the lift pin plate 20 are moved up and down. Furthermore, since the central portion 60C of the V-shaped nozzle 60 closes the through hole 20a of the lift pin plate 20, it is possible to further prevent the processing liquid from entering the through hole 20a.

  Further, in the above embodiment, since the rotating cup 36 is provided on the holding plate 30, the processing liquid is prevented from splashing outward from the rotating wafer W when the wafer W is subjected to the liquid processing. can do. In addition, since the substrate holding member 31 is provided on the holding plate 30, the wafer W is more stably held by supporting the wafer W from the side when the wafer W is rotated.

  The above embodiment can be modified as follows, for example.

In the above embodiment, the resist film is formed by sequentially performing the chemical solution cleaning step by SPM, the first DIW rinsing step, the two-fluid spraying step by DIW and N ₂ gas, the second DIW rinsing step, and the N ₂ spin drying step. Removed. However, the process performed by the substrate processing apparatus according to the above embodiment is not limited to this. For example, the chemical cleaning step can be a wet etching process using a mixed acid (a mixture of sulfuric acid and nitric acid). Also in this case, the subsequent rinsing step, two-fluid spraying step, and N ₂ spin drying step can be similarly performed.

Further, the two-fluid spraying process may be performed with SC-1 (mixed liquid of ammonia water and hydrogen peroxide solution) and N ₂ gas. In this case, the third fluid supply mechanism (first DIW supply mechanism) 70c shown in FIG. 2A may be replaced with an SC-1 supply mechanism. Also in this case, at least during the SPM cleaning process (preferably always during operation of the substrate cleaning apparatus), a small amount of N ₂ gas is allowed to flow out from the discharge port 62, so that SPM enters the discharge path 64a, which is SC-1. It is possible to prevent mixing with SC-1 at the initial stage of discharging two fluids composed of N ₂ and N ₂ gas.

Further, if the two-fluid spraying process is performed with DIW and N ₂ gas, the first DIW rinsing process can be omitted. In place of the N ₂ gas, it is also possible to use other inert gases.

  It is also possible to use a heating lamp other than the LED lamp, such as a halogen lamp, for heating the wafer. However, it is desirable to use an LED lamp from the viewpoint of heating efficiency and space efficiency.

  It is preferable to use a nozzle having a plurality of discharge ports arranged in the radial direction of the wafer as shown in the drawing as a nozzle for supplying a chemical solution to the lower surface of the wafer from the viewpoint of processing uniformity and processing solution saving. However, the present invention is not limited to this. For example, the chemical solution may be discharged to the central portion 60C of the nozzle including only the central portion 60C without the rod-shaped portions 60A and 60B, and then the chemical solution may be discharged from the central portion on the lower surface of the wafer. In this case, the chemical solution consumption increases, but it is possible to execute the chemical treatment. Also, for example, while maintaining the second rod-shaped portion 60B for two-fluid spray, the first rod-shaped portion 60A for supplying SPM is deleted, and SPM is discharged from the chemical solution discharge port provided in the central portion 60C of the nozzle. May be.

  In the above embodiment, as a substrate holding part of a so-called “spin chuck” which is a mechanism for holding and rotating a wafer, a type having a lift pin plate 20 and a holding plate 30 integrated with a rotary cup 36 is used. It was. However, the V-shaped nozzle 60 according to the above embodiment can be combined with various types of spin chucks to construct a liquid processing apparatus as long as the V-shaped nozzle 60 is of a type that holds the periphery of the substrate.

20, 30 Substrate holder (holding plate, lift pin plate)
31, 37 Holding member (substrate holding member, fixed holding member)
39 Rotation Drive Unit 56 Cup (Outer Cup)
60 nozzles (V-shaped nozzles)
60A First rod-shaped portion of nozzle 60B Second rod-shaped portion of nozzle 60C Center portion of nozzle 61 Discharge port 62 Discharge port 67b Treatment liquid discharge path 68b Gas discharge path 70a, 70b Chemical liquid supply mechanism W Substrate (semiconductor wafer)

Claims (11)

A holding member that holds the peripheral edge of the substrate, and a substrate holding portion that holds the substrate horizontally;
A rotation drive unit for rotating the substrate holding unit;
A first discharge port provided to be positioned below the lower surface of the substrate held by the substrate holding unit, and for discharging a processing fluid containing a chemical solution to the lower surface of the substrate held by the substrate holding unit; A nozzle having a second discharge port for discharging two fluids obtained by mixing a processing liquid and a gas onto the lower surface of the substrate held by the substrate holding unit, the second discharge port A nozzle in which a processing liquid discharge path for guiding the processing liquid to the second discharge port and a gas discharge path for guiding the gas to the second discharge port are joined in
A chemical supply mechanism for supplying a first chemical to the first discharge port;
A treatment liquid supply mechanism for supplying a treatment liquid to the second discharge port;
A gas supply mechanism for supplying gas to the second discharge port;
A controller for controlling operations of at least the chemical solution supply mechanism, the treatment solution supply mechanism, and the gas supply mechanism,
The controller is
When performing the two-fluid spray process for discharging the two-fluid from the second discharge port, the gas is controlled at the first flow rate required for the two-fluid spray process by controlling the gas supply mechanism. Flow to the second outlet,
In the case where the two-fluid spray process is not performed, at least when the chemical liquid process for discharging the first chemical liquid from the first discharge port is performed, the gas supply mechanism is controlled so as to be more than the first flow rate. A liquid processing apparatus, characterized in that gas flows to the second discharge port with a small second flow rate.   The controller controls the gas supply mechanism so that gas flows to the second discharge port at the second flow rate when the two-fluid spray process or the chemical process is not performed. The liquid processing apparatus according to claim 1.   The liquid processing apparatus according to claim 1, wherein the processing liquid is DIW (pure water).   The liquid processing apparatus according to claim 1, wherein the processing liquid is a second chemical liquid different from the first chemical liquid.   The liquid processing apparatus according to claim 1, wherein the gas is an inert gas.   A plurality of second discharge ports are provided in the nozzle, and the plurality of second discharge ports are opposed to the peripheral portion of the substrate from a position facing the central portion of the substrate held by the substrate holding unit. The liquid processing apparatus according to claim 1, wherein the liquid processing apparatus is arranged between the positions. Holding the substrate in a horizontal position;
Rotating the substrate;
Discharging a chemical solution from a first discharge port provided below the lower surface of the substrate to the lower surface of the substrate to perform a chemical treatment on the substrate;
The second discharge port provided below the lower surface of the substrate is supplied with the processing liquid and the gas through the processing liquid discharge path and the gas discharge path respectively joined at the second discharge port portion. Supplying a two-fluid spray treatment to the substrate by discharging a two-fluid mixed with the treatment liquid and the gas onto the lower surface of the substrate by supplying to the outlet;
With
In the case of performing a two-fluid spray process for discharging the two fluids from the second discharge port, a gas is caused to flow to the second discharge port at a first flow rate necessary for the execution of the two-fluid spray process,
In the case where the two-fluid spray process is not performed, at least when the chemical liquid process for discharging the first chemical liquid from the first discharge port is performed, the gas flows at a second flow rate smaller than the first flow rate. A liquid processing method, wherein the liquid processing method is characterized by causing the second discharge port to flow.   8. The liquid processing method according to claim 7, wherein when the two-fluid spray process or the chemical liquid process is not performed, a gas is caused to flow to the second discharge port at the second flow rate.   The liquid processing method according to claim 7, wherein the processing liquid is DIW (pure water).   The liquid processing method according to claim 7, wherein the processing liquid is a second chemical liquid different from the first chemical liquid.   The liquid processing method according to claim 7, wherein the gas is an inert gas.

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