JP2013239491A - Substrate processing device and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a first processing section under a second processing section from being contaminated by processing liquid used at the second processing section, in a substrate processing device having the first processing section and the second processing section thereon.SOLUTION: A substrate processing device (100) comprises: a first processing section (1) for processing a substrate with first liquid; and a second processing section (2) for processing the substrate with second liquid at an upper part of the first processing section (1). When the substrate is processed with the second liquid at the second processing section, processing liquid is supplied to the substrate held and rotated by a substrate holding section (10) at the second processing section from a processing liquid supply nozzle (40). At that time, liquid supply means (45) supplies the liquid coating a surface of a member constituting the first processing section (1). The substrate processing device (100) comprises: first exhaust paths (50A, 55) for exhausting the liquid supplied to the first processing section to the outside of the liquid processing device; and second exhaust paths (50B, 56) isolated from the first exhaust paths and exhausting the processing liquid supplied to the second processing section to the outside of the substrate processing device.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for supplying a processing liquid to a substrate and performing a predetermined liquid processing on the substrate.

  In a series of processes for manufacturing a semiconductor device, a liquid process for supplying a processing liquid such as a chemical liquid or a rinsing liquid to the substrate is performed in order to remove unnecessary films or contaminants on the substrate such as a semiconductor wafer. Is called. As an apparatus for performing such a liquid processing, there is known a substrate processing apparatus that supplies a processing liquid from a processing liquid nozzle onto the surface of a substrate held and rotated by a spin chuck. (For example, refer to Patent Document 1).

  Usually, in the above-described type of substrate processing apparatus, a plurality of types of liquid processing are continuously performed on one substrate in one substrate processing apparatus. Specifically, for example, an acidic chemical cleaning process, a rinsing process, an alkaline chemical cleaning process, and a rinsing process are continuously performed on one substrate. However, it is not always optimal to use the same processing unit for all of the series of processes described above. On the other hand, if the above-described series of processing is performed using a plurality of types of substrate processing apparatuses, the production efficiency is reduced by the amount of transfer time between the substrate processing apparatuses.

  In order to solve the above problem, the present inventors have conceived a substrate processing apparatus in which two processing units are provided on the upper and lower sides. However, it has been found that such a substrate processing apparatus has a problem of cross contamination, in particular, a problem that the processing liquid in the upper processing section adversely affects the lower processing section.

Japanese Patent Laid-Open No. 2008-4878

  According to the present invention, in a substrate processing apparatus having a first processing unit and a second processing unit on the first processing unit, the first processing unit below the second processing unit is used by the processing liquid used in the second processing unit. Provide technology to prevent contamination.

  According to the present invention, in the substrate processing apparatus, the first processing unit for performing the first liquid processing on the substrate, and the second processing unit for performing the second liquid processing on the substrate above the first processing unit, A substrate holding unit for holding the substrate, a rotating mechanism for rotating the substrate holding unit, a substrate moving mechanism capable of moving the substrate between the first processing unit and the second processing unit, and the second A processing liquid supply nozzle for supplying a processing liquid to a rotating substrate held and rotated by the substrate holding section in the processing section; and when the second processing is performed on the substrate in the second processing section, the first processing section is A liquid supply means for supplying a liquid covering the surface of the constituent members, a first discharge path for discharging the liquid supplied to the first processing section to the outside of the substrate processing apparatus, and the first discharge path The processing liquid provided and supplied to the second processing unit A second discharge path, the substrate processing apparatus including a is provided for discharging to the outside of the plate processor.

  In addition, according to the present invention, the first processing unit for performing the first liquid processing on the substrate and the second processing unit for performing the second liquid processing on the substrate above the first processing unit are provided. In the substrate processing method performed using the substrate processing apparatus, the second processing unit in a state where the liquid is supplied to the surface of the member constituting the first processing unit and the surface of the member is covered with the liquid. The substrate is rotated, the processing liquid is supplied to the rotated substrate to perform the second liquid processing, and the liquid supplied to the surface of the member constituting the first processing unit is discharged to the first position. Discharging to the outside of the substrate processing apparatus via a path, and a second discharge path provided to isolate the processing liquid supplied to the substrate in the second processing section from the first discharge path. And discharging the substrate processing apparatus through the substrate processing method. That.

  According to the present invention, when the second liquid processing is performed on the substrate in the second processing unit, the liquid that covers the surface of the member constituting the first processing unit is supplied to be used in the second processing unit. It is possible to prevent the first processing unit from being contaminated by the processing liquid. Moreover, the discharge path for the liquid supplied for preventing contamination of the first processing section and the discharge path for the processing liquid used in the second processing section can be separated.

1 is a plan view schematically showing an overall configuration of a substrate processing system in which a substrate processing apparatus according to an embodiment is incorporated. It is sectional drawing which shows the structure of the said substrate processing apparatus, Comprising: It is a figure which shows the state which is performing the chemical | medical solution process. It is a schematic sectional drawing which shows the state which is performing the DIP rinse process by the said substrate processing apparatus. It is a schematic sectional drawing which shows the state which is performing the rinse process and the spin drying process by the said substrate processing apparatus.

  Embodiments of the invention will be described below with reference to the accompanying drawings. First, a processing system including a substrate processing apparatus 100 configured as a substrate cleaning apparatus will be described with reference to FIG. The processing system includes a mounting table 101 for mounting a carrier containing a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as a substrate to be processed, and a wafer W accommodated in the carrier. A transfer arm 102, a shelf unit 103 having a buffer for temporarily placing the wafer W taken out by the transfer arm 102, and the wafer W placed on the shelf unit 103 are received, and the wafer W is subjected to substrate cleaning. And a transfer arm 104 for transferring into the apparatus 10. As shown in FIG. 2, a plurality (10 in the embodiment shown in FIG. 2) of substrate processing apparatuses 100 and two reversers (REV, wafer turning apparatus) 105 are incorporated in the liquid processing system.

  Next, the configuration of the substrate processing apparatus 100 will be described with reference to FIGS. As shown in FIG. 2, the substrate processing apparatus 100 includes a first processing unit 1 for performing a first liquid processing on a wafer W and a second liquid processing for a wafer W above the first processing unit. And a second processing unit 2. In the present embodiment, the first liquid processing is liquid processing performed by discharging the processing liquid from the nozzle to the wafer W while rotating the wafer W, and the second liquid processing is performed by immersing the wafer W in the processing liquid. (DIP) It is a liquid process performed by touching. The substrate processing apparatus 100 includes a plurality of first processing members for executing processing in the first processing unit 1 and a plurality of second processing members for executing processing in the second processing unit. . The first and second processing members will be described after the specific configuration of the substrate processing apparatus 100 is described in detail.

  The substrate processing apparatus 100 includes a substrate holding unit 10 that supports the wafer W with the circuit pattern forming surface facing downward. The substrate holding unit 10 includes a circular top plate 11 having a diameter larger than the diameter of the wafer W and three gripping claws provided on the peripheral edge of the top plate 11 (two gripping claws 12a, 12b is shown). The three gripping claws are provided at positions obtained by dividing the circumference of the top plate 11 into three equal parts, and one of the gripping claws 12a (shown on the right side in FIG. 2) is movable. The movable gripping claw 12a is biased by a spring (not shown) so as to press the wafer W toward the other two (only one is shown) fixed gripping claws 12b. By the push bar 13a of the grip release mechanism 13, the movable grip claw 12a can be moved to a position where the wafer W is released against the spring force. Such a mechanism that enables gripping and release by gripping claws is well known in the art, and detailed description thereof is omitted. A gap is formed between the upper surface of the wafer W held by the gripping claws and the lower surface of the top plate 11.

  The top plate 11 can be rotated around a vertical axis by a motor (rotating mechanism) 14. By rotating the top plate 11, the wafer W held by the holding claws is also rotated together with the top plate 11. A heater 15 for heating the wafer W is provided above the top plate 11. The heater 15 can be configured by a lamp array including a plurality of LED lamps that emit light having a wavelength suitable for heating the wafer W, for example, light having a wavelength of 880 nm. The heater 15 is energized from a power supply device (not shown). In this case, the portion of the top plate 11 directly below the lamp array is made of a material that transmits light with a wavelength of 880 nm well and does not corrode by the SPM liquid described later, for example, quartz or tetrafluoroethylene (PTFE). It is preferable to do. The heater 15 is structurally separated from the top plate 11 so as not to rotate even if the top plate 11 is rotated. In order to protect the grip release mechanism 13, the motor 14, and the heater 15 from the chemical solution atmosphere, a substantially cylindrical cover 16 is provided above the top plate 11. The cover 16 is also structurally separated from the top plate 11 so that it does not rotate even if the top plate 11 is rotated.

  The motor 14 has a hollow rotating shaft 14a, and an upper nozzle 20 is passed through a hole formed in the cavity of the rotating shaft 14a and in the center of the top plate. The upper nozzle 20 can be rotated relative to the rotating shaft 14a or is structurally separated from the rotating shaft 14a so as not to rotate even when the motor 14 is driven. A rinsing liquid passage 21a through which a rinsing liquid (in this embodiment, room temperature pure water (also referred to as “CDIW”) flows) and an N2 gas passage 22a through which N2 gas flows extend in the axial direction in the upper nozzle 20. The lower end of the liquid passage 21a serves as a rinsing liquid discharge port 21b, and the lower end of the N2 gas passage 22a serves as an N2 gas discharge port 22b. N2 gas (nitrogen gas) is supplied from the N2 gas supply mechanism 22c to the N2 gas passage 22a.

  The substrate holding unit 10 is supported by the support arm 17. The support arm 17 can be moved up and down by a lifting mechanism 18. The elevating mechanism 18 can be constituted by, for example, a ball screw mechanism. By driving the lifting mechanism 18, the top plate 11, the gripping claws 12a and 12b, the gripping release mechanism 13, the motor 14, the heater 15, the cover 16, and the upper nozzle 20 can be lifted and lowered together. The substrate holding unit 10 includes a loading / unloading position (a position higher than the position shown in FIG. 2) at which the wafer W is loaded into and unloaded from the substrate holding unit 10 and a first processing position (processing in the first processing unit 1). 2) and a second processing position lower than the first processing position (the positions shown in FIGS. 3 and 4 for processing in the second processing unit 2).

  Below the substrate holding unit 10, a storage unit 30 is provided that forms a tank for storing a processing liquid in which the wafer W is immersed. The storage unit 30 includes a circular bottom plate (bottom wall) 31 and a ring-shaped weir member 32 that surrounds the outer peripheral edge of the bottom plate 31. The dam member 32 can be moved up and down by an elevating mechanism 33 such as an air cylinder, whereby the relative height positional relationship between the bottom plate 31 and the dam member 32 can be changed. The weir member 32 can take an ascending position (position shown in FIG. 3), an intermediate position (position shown in FIG. 2), and a descending position (position shown in FIG. 4). A gap 34 is formed between the outer peripheral edge of the bottom plate 31 and the inner peripheral surface of the weir member 32. For convenience of illustration, the size of the gap 34 is drawn larger than the actual size.

  The upper surface of the bottom plate 31 is inclined so that the center portion is the highest and becomes lower as it approaches the periphery. Thereby, drainage from the reservoir 30 can be performed efficiently. An ultrasonic transducer 35 is provided on the bottom plate 31. Ultrasonic cleaning can be performed by supplying power to the ultrasonic transducer 35 from an ultrasonic oscillator (not shown) while the cleaning liquid is stored in the storage unit 30.

  The lower nozzle 40 is passed through a hole penetrating the center portion of the bottom plate 31 up and down. In the lower nozzle 40, a chemical solution (SPM (Sulfuric Acid Hydrogen Peroxide Mixture) solution generated by mixing heated sulfuric acid and room temperature hydrogen peroxide solution) flows in the axial direction. A chemical liquid passage 41a, a rinsing liquid passage 42a through which a rinsing liquid (normal temperature DIW (pure water) in this embodiment) flows, and an N2 gas passage 43a extend. The upper end of the chemical liquid passage 41a is a chemical discharge port 41b, the upper end of the rinse liquid passage 42a is a rinse liquid discharge port 42b, and the upper end of the N2 gas passage 43a is an N2 gas discharge port 43b. . The SPM liquid is supplied to the chemical liquid passage 41a from the chemical liquid supply mechanism 41c. Room temperature DIW is supplied from the rinse liquid supply mechanism 42c to the rinse liquid passage 42a. N2 gas is supplied to the N2 gas passage 43a from an N2 gas supply mechanism 43c.

  The lower nozzle 40 can be moved up and down between a raised position (position shown in FIG. 2) and a lowered position (position shown in FIGS. 3 and 4) by a lifting mechanism 44 such as an air cylinder. The lower nozzle 40 is supported by a plate-like support body 44b, and the lower nozzle 40 is moved up and down by moving the support body 44b up and down by the elevating mechanism 44. A suitable sealing member (not shown) is provided between the inner peripheral surface of the hole of the bottom plate 31 through which the lower nozzle 40 passes and the outer peripheral surface of the lower nozzle 40. In addition, a bellows 44a is provided between the lower surface of the bottom plate 31 and the support body 44b so as to surround the lower nozzle 40 in preparation for a leak from the seal member.

  Further, a rinse nozzle 45 is provided on the bottom plate 31. The rinse nozzle 45 is supplied with pure water (also referred to as “HDIW”) heated from the rinse liquid supply mechanism 45 c.

Various processing fluid supply mechanisms described above (specifically, rinse liquid supply mechanism 21c, N2 gas supply mechanism 22c, chemical liquid supply mechanism 41c, rinse liquid supply mechanism 42c, N2 gas supply mechanism 43c, rinse liquid supply mechanism 45c) Is a supply source of each processing fluid, a pipe line connected to the supply source, a flow rate adjustment device (open / close valve, flow rate adjustment valve, etc.) interposed in the pipe line, and a process provided as necessary. And a temperature control device (such as a heater) for adjusting the temperature of the fluid. The chemical solution supply mechanism 41c for supplying the SPM solution includes a sulfuric acid supply mechanism that supplies heated sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide that supplies hydrogen peroxide water (H ₂ O ₂ ) at room temperature. A water supply mechanism and a mixing unit such as an in-line mixer that mixes sulfuric acid and hydrogen peroxide solution supplied from the sulfuric acid supply mechanism and the hydrogen peroxide solution supply mechanism can be used. As each supply mechanism, those well-known in the technical field can be adopted, and detailed description thereof will be omitted.

  A cup body 50 is provided around the storage unit 30. The cup body 50 has an annular inner wall 51 and outer wall 52, a partition wall 53, and a bottom wall 54. In the cup body 50, an annular first internal space 50A formed between the inner wall 51 and the partition wall 53, and an annular second internal space 50B formed between the outer wall 52 and the partition wall 53, Is provided. As will be described in detail later, the first internal space 50A and the second internal space 50B respectively form part of a first discharge path and a second discharge path for discharging the fluid used for processing to the outside of the substrate processing apparatus. . The first internal space 50A is divided by the weir member 32 into an inner portion 50A1 and an outer portion 50A2.

  The bottom wall 54 of the cup body 50 is formed with a first discharge port 55 for discharging a fluid (specifically, mainly DIW) flowing into the first internal space 50A. Further, the bottom wall 54 of the cup body 50 is further formed with a second discharge port 56 for discharging the fluid (specifically, mainly the SPM liquid) flowing into the second internal space 50B. A discharge pipe 56a is connected to the second discharge port 56, and a mist trap 56b and an ejector 56c are sequentially provided in the discharge pipe 56a. Instead of providing the mist trap 56b in the discharge pipe 56a, a structure for gas-liquid separation may be provided in the second internal space 50B of the cup body 50.

  The dam member 32 of the storage unit 30 described above is located in the first internal space 50A, and the first internal space 50A is partitioned by the dam member 32 into an inner portion 50A1 and an outer portion 50A2.

  As schematically shown in FIG. 2, the substrate processing apparatus 100 includes a controller (control unit) 200 that performs overall control of the entire operation. The controller 200 controls the operation of all functional components of the substrate processing apparatus 100 (for example, the substrate holding unit 11, the motor 14, the heater 15, the power source of the ultrasonic transducer, the supply mechanism of various processing fluids, etc.). The controller 200 can be realized by, for example, a general-purpose computer as hardware and a program (such as an apparatus control program and a processing recipe) for operating the computer as software. The software is stored in a storage medium such as a hard disk drive that is fixedly provided in the computer, or is stored in a storage medium that is detachably set in the computer such as a CD-ROM, DVD, or flash memory. Such a storage medium is indicated by reference numeral 201 in FIG. The processor 202 calls and executes a predetermined processing recipe from the storage medium 201 based on an instruction or the like from a user interface (not shown) as necessary, whereby each functional component of the substrate processing apparatus 100 is controlled under the control of the controller 200. It operates to perform a predetermined process.

  Next, a series of processes for removing an unnecessary resist film on the upper surface of the wafer W will be described as an embodiment of a substrate processing method executed using the substrate processing apparatus 100 described above. A series of processing described below is performed by the controller 200 controlling the operation of each functional component of the substrate processing apparatus 100. In the present embodiment, the controller 200 also has a function of controlling the operation of the entire substrate processing system shown in FIG.

  A wafer W having an unnecessary resist film to be removed on the surface is taken out from the carrier 101 by the transfer arm 102 and placed on the shelf unit 103. The transfer arm 104 takes out the wafer W from the shelf unit 103 and loads it into the reverser 105. In the reverser 105, the wafer W is turned over so that the circuit pattern forming surface, that is, the surface on which the resist film is formed faces downward. The transfer arm 104 takes out the wafer W from the reverser 105. On the other hand, in the substrate processing apparatus 100, the lifting mechanism 18 is operated to place the substrate holding unit 10 in the loading / unloading position (the position where the entire substrate holding unit 10 is sufficiently above the uppermost part of the cup body 40). Let In this state, the transfer arm 104 (not shown in FIG. 2) loads the wafer W to a position where the gripping claws of the substrate holding unit 10 at the loading / unloading position can be gripped. When the wafer W is held by the gripping claws of the substrate holding unit 10, the transfer arm 104 moves out of the substrate processing apparatus 100.

[Chemical solution processing]
Next, the substrate holding unit 10 holding the wafer W is lowered from the loading / unloading position to the first processing position shown in FIG. At this time, the wafer W is positioned at a height position lower than the upper edge 52 a of the outer wall 52 of the cup body 50 and higher than the upper edge 53 a of the partition wall 53. Further, the weir member 32 of the storage unit 30 is positioned at an intermediate position, DIW heated to about 60 ° C. to 80 ° C. is ejected from the rinse nozzle 45, and DIW is stored in the storage unit 30. In the case where the wafer W is processed with a processing solution at room temperature in the next step, DIW at room temperature may be used. The DIW is supplied from the rinse nozzle 45 at a jet flow rate that allows the storage unit 30 to be quickly filled with DIW from the start of ejection until the storage unit 30 is filled with DIW. After DIW is filled in the reservoir 30, the DIW ejection flow rate from the rinse nozzle 45 is changed from the gap 34 between the weir member 32 and the bottom plate 31 of the reservoir 30 to the inner portion 50A1 of the first internal space 50A. The flow rate is reduced so as to be almost balanced with the leakage flow rate of DIW. At this time, there may be DIW that overflows the upper edge 32a of the weir member 32 and overflows to the outer space 50A2 of the first inner space 50A.

  Further, the lower nozzle 40 is raised, and the chemical discharge port 41b at the tip of the lower nozzle 40 is at a height higher than the upper edge 32a of the weir member 32, that is, above the liquid level of DIW stored in the storage unit 30. It should be located at the height position. Further, the wafer W held on the substrate holding unit 10 is rotated, and then energization to the heater 15 is started, and the wafer W held on the substrate holding unit 10 is heated from the back surface side (upper surface side). Further, the ejector 55c is operated to suck the inside of the second internal space 50B of the cup body 50. Thereby, the air flow F1 which goes into the 2nd internal space 50B from the clearance gap between the top plate 11 and the upper edge 52a of the outer wall 52 is formed.

  Next, the SPM liquid is discharged from the chemical liquid discharge port 41 b of the lower nozzle 40 toward the center of the lower surface of the wafer W held and rotated by the substrate holding unit 10. The SPM liquid spreads outward on the lower surface of the wafer W due to centrifugal force and scatters outward of the wafer W. The SPM liquid reacts with the resist film as it flows on the lower surface of the wafer W, thereby removing the resist film. The removed resist film and reaction product together with the SPM liquid splashing outward of the wafer W are formed between the upper edge 52a of the outer wall 52 of the cup body 50 and the upper edge 53a of the partition wall 53 from the first inside. Jump into the space 50B (see arrow S1). The air flow F1 promotes the SPM liquid, the reaction product, and the removed resist film (hereinafter referred to as “contaminant” for simplicity) to jump into the first internal space 50B. Further, fumes (in the form of gas), which are reaction products generated by the reaction between the SPM liquid and the resist film, are also introduced into the first internal space 50B by the air flow F1. The pollutant that has flowed into the first internal space 50B is discharged from the second discharge port 56, the liquid component and the gas component are separated by the mist trap 56b, and discharged to the factory waste liquid system (acid drain) and the factory exhaust system. .

  The SPM liquid, reaction products, and part of the removed resist film supplied to the lower surface of the wafer W are dropped below the wafer W by gravity and dropped toward the storage unit 30. However, since DIW is stored in the storage unit 30, in other words, the surface of the member constituting the storage unit 30 forming the second processing unit 2 is covered with DIW, and thus the surface of the member is contaminated. Never happen. In addition, since DIW is continuously supplied from the rinse nozzle 45 to the storage unit 30 and DIW flows out from the storage unit 30 through the gap 34, contaminants fall into the storage unit 30. However, the contaminant is diluted with DIW and flows out of the storage unit 30 along the DIW flow. Therefore, the storage unit 30 is not contaminated. The DIW that has flowed into the first internal space 50A of the reservoir 30 cup body 50 is discharged from the discharge port 55 to the factory waste liquid system.

[DIP rinse treatment]
After performing the chemical processing for a predetermined time, the discharge of the SPM liquid from the lower nozzle 40 is stopped, the energization to the heater 15 is stopped, and the rotation of the substrate holding unit 10 is stopped. Further, the weir member 32 of the storage unit 30 is moved from the intermediate position to the raised position, and the amount of DIW ejected from the rinse nozzle 45 is increased. When the reservoir 30 is filled with DIW as shown in FIG. 3, the DIW ejection flow rate from the rinse nozzle 45 is changed from the gap 34 between the weir member 32 and the bottom plate 31 of the reservoir 30 to the first internal space 50A. The flow rate is decreased so as to be substantially balanced with the leakage flow rate of DIW leaking to the inner portion 50A1. At this time, there may be DIW that overflows the upper edge 32a of the weir member 32 and overflows to the outer portion 50A2 of the first inner space 50A. Further, the lower nozzle 40 is lowered to the lowered position so as not to collide with the wafer W.

  Next, the substrate holding unit 10 is lowered, and the wafer W held by the substrate holding unit 10 is immersed in the heated DIW stored in the storage unit 30. In this state, the ultrasonic transducer 35 is driven to generate ultrasonic vibration, and the wafer W is ultrasonically cleaned. For simplification of the drawing, only two ultrasonic transducers 35 are shown, but actually, a larger number of ultrasonic transducers 35 are provided and distributed uniformly below the wafer W. ing. In order to perform more uniform ultrasonic cleaning, the wafer W may be rotated by rotating the substrate holder 10 at a low speed. By performing ultrasonic cleaning in this way, the residue derived from the chemical treatment attached to the lower surface of the wafer W is removed from the wafer W. The removed residue, together with DIW, flows out from the reservoir 30 through the gap 34 into the first internal space 50A of the cup body 50, and is discharged from the first discharge port 55 to the factory waste liquid system.

[DIW rinse treatment]
After performing the above DIP rinsing process (rinsing process performed in a state of being immersed in hot DIW) for a predetermined time, the DIW ejection from the rinsing nozzle 45 is stopped, and as shown in FIG. 32 is moved from the raised position to the lowered position. As a result, most of the DIW stored in the storage section 30 flows into the outer portion 50A2 of the first internal space 50A of the cup body 50 across the upper edge 32a of the dam member 32 at a stretch, and the first discharge port 55 Discharged from. The remaining DIW stored in the storage unit 30 flows into the inner portion 50A1 of the first internal space 50A through the gap 34 and is discharged from the first discharge port 55. The substrate processing unit 10 and the lower nozzle 40 are maintained at the same height as when the DIP rinsing process is performed. In this state, the wafer W is rotated by the substrate holding unit 10, normal temperature DIW is discharged from the rinse liquid discharge port 42 b of the lower nozzle 40 to the center of the lower surface of the wafer W, and the rinse liquid discharge port of the upper nozzle 20. The normal temperature DIW is discharged from 21 b to the center of the upper surface of the wafer W. The DIW discharged to the central portion of the upper and lower surfaces of the wafer spreads toward the periphery of the wafer W while washing away contaminants remaining on the wafer W due to centrifugal force, and scatters outward from the wafer W. Since the upper edge 53a of the partition wall 53 of the cup body 50 is at a higher position than the wafer W, the scattered DIW is received by the partition wall 53 and flows downward through the outer portion 50A2 of the first internal space 50A. And is discharged from the first discharge port 55.

[Spin drying process]
After the DIW rinse process is performed for a predetermined time, the DIW discharge from the rinse liquid discharge port 42b of the lower nozzle 40 and the rinse liquid discharge port 21b of the upper nozzle 20 is stopped, and the rotation speed of the wafer W is increased. As a result, the DIW remaining on the wafer W is shaken off by the centrifugal force, whereby the wafer W is dried. At this time, DIW scattered from the wafer W is received by the partition wall 53, flows downward through the outer portion 50A2 of the first inner space 50A, and is discharged from the discharge port 55. At this time, N2 gas is discharged from the N2 discharge port 43b of the lower nozzle 40 to the center of the lower surface of the wafer W, and N2 gas is discharged from the N2 gas discharge port 22b of the upper nozzle 20 to the center of the upper surface of the wafer W. To do. As a result, the oxygen concentration and humidity in the atmosphere around the wafer W are reduced, and the wafer W can be efficiently dried while preventing the generation of the water mark.

  Thus, a series of processes for one wafer W is completed. Thereafter, the substrate holding unit 10 is positioned at the carry-in / out position, and the processed wafer W is carried out of the substrate processing apparatus 100 by a transfer arm (not shown).

  As can be understood from the above description, in the above-described embodiment, the first liquid process performed in the first processing unit 1 is a DIP rinse process, and the second liquid processing performed in the second processing unit above the first processing unit. The liquid process is a chemical process (SPM process). In addition, the substrate processing apparatus 100 mainly includes a storage unit 30, a substrate holding unit 10, and a rinse nozzle 45 as a plurality of first processing members for executing the first liquid processing in the first processing unit 1. As a plurality of second processing members for performing the first liquid processing in the second processing unit 2, the substrate holding unit 10, the motor 14, and the lower nozzle 40 are mainly included. Since the substrate holding unit 10 is used to hold the substrate in both the first processing unit 1 and the second processing unit 2, it is a first processing member and a second processing member.

  According to the above embodiment, when the chemical processing (SPM processing) is performed in the second processing unit 2 above the first processing unit 1, the surface of the first processing member for the first liquid processing, in particular, Since the surface of the member that is not allowed to be contaminated (specifically, the upper surface of the bottom plate 31 of the storage unit 30 and the inner peripheral surface of the dam member 32) is covered with liquid (DIW), the first processing unit 1 is configured. The member is prevented from being contaminated. For this reason, when performing a 1st liquid process in a 1st process part after a 2nd liquid process, it can prevent that a cross contamination arises.

  In addition, the first internal space 50A of the cup body 50 constituting a part of the first discharge path for discharging the liquid (DIW) supplied to the first processing unit to the outside of the substrate processing apparatus 100, and the second processing unit Since the second internal space 50B of the cup body 50 constituting a part of the second discharge path for discharging the liquid (SPM) supplied to the outside of the substrate processing apparatus 100 is separated by the partition wall 53, Even if the liquid supplied to the first processing unit and the liquid supplied to the second processing unit are reactive, there is no risk of adverse effects due to the reaction (generation of heat, generation of harmful substances, pollutants). . Moreover, since the liquid supplied to the first processing unit and the liquid supplied to the second processing unit are not mixed, the liquid supplied to the second processing unit can be recovered and reused.

  Moreover, according to the said embodiment, since the bottom plate 31 and the dam member 32 which comprise the storage part 30 can move up and down relatively, for example, the height of the upper edge 32a of the dam member 32 is the same as the upper surface of the bottom plate 31 By setting the height, the liquid stored in the storage unit 30 can be quickly discharged, and the process can be quickly shifted to the next step. Moreover, the depth of the storage part 30 can be suitably changed as needed by moving the bottom plate 31 and the dam member 32 relatively up and down.

  In the above embodiment, the weir member 32 is positioned at the intermediate position during the chemical treatment shown in FIG. 2, but may be positioned at the raised position. In this case, while it is possible to shorten the transition time from the chemical treatment to the DIP rinse treatment, it is necessary to increase the vertical stroke amount of the lower nozzle 40.

  In the above embodiment, the liquid is discharged from the storage unit 30 when a certain amount of liquid is stored in the storage unit 30 mainly by leakage from the gap 34 between the bottom plate 31 and the weir member 32. However, the present invention is not limited to this. The liquid in the reservoir 30 may be discharged mainly by the overflow of the liquid at the upper edge 32a of the dam member 32. In addition, by discharging | emitting by the leak from the clearance gap 34, the contaminant which falls in the storage part 30 (detailed later) can be discharged | emitted from the storage part 30, diluting actively. On the other hand, by discharging due to overflow at the upper edge 32a of the weir member 32, DIW in the surface layer portion containing a large amount of contaminants can be discharged. By using leakage and overflow in combination, the above two effects can be achieved simultaneously. Depending on the situation, only one of leakage and overflow may be employed, or both may be employed. When only leakage is employed, the flow rate of ejection from the rinse nozzle 45 may be controlled so that overflow does not occur. When only overflow is employed, the gap 34 between the weir member 32 and the bottom plate 31 may be eliminated or sealed. When both leakage and overflow are employed, the flow rate of ejection from the rinse nozzle 45 may be controlled so that a desired amount of overflow occurs.

  Moreover, in the said embodiment, although the chemical | medical solution used in a chemical | medical solution process was SPM liquid, it is not limited to this, Other chemical | medical solutions, for example, SC-1, SC-2, DHF etc., may be sufficient. . Further, during a series of processing, the chemical processing of the wafer W back surface (pattern non-forming surface) may be performed with the circuit pattern forming surface of the wafer W facing up.

  In the above embodiment, the SC-1 cleaning process and the DIW rinse process may be performed again between the DIW rinse process and the spin drying process. The SC-1 cleaning can be executed in the situation shown in FIG. 4 by adding a configuration for discharging the SC-1 liquid to the lower nozzle 40.

  Moreover, in the said embodiment, although the member holding the wafer W in the 1st process part 1 and the 2nd process part 2 was the same board | substrate holding part 10, it is not limited to this. For example, another substrate holding unit that holds the wafer W in the storage unit 30 may be provided. Further, the other substrate holding unit may be movable up and down, and the wafer W may be transferred between the first processing unit 1 and the substrate holding unit 10. In the above embodiment, the substrate moving mechanism for moving the wafer W between the first processing unit 1 and the second processing unit 2 is the substrate holding unit 10 and the lifting mechanism 18 for moving the substrate holding unit 10 up and down. Although configured, the present invention is not limited to this. As described above, when a substrate holding unit that can be raised and lowered is provided separately from the substrate holding unit 10, this is the substrate moving mechanism. Further, a member other than the substrate holding unit 10 and the another substrate holding unit, for example, an arm or a pin that moves up and down may be provided as the substrate moving mechanism.

  In the above embodiment, when the second liquid processing is performed on the substrate in the second processing section, the liquid supply means for supplying the liquid covering the surface of the member constituting the first processing section is the first processing section. The rinse nozzle 45 for supplying DIW, which is a liquid used for the first liquid process (DIP rinse process), is not limited to this. It is also conceivable that the first liquid process in the first processing unit is a liquid process other than the DIW rinse process (for example, a liquid process using a chemical solution different from the second liquid process). In such a case, a liquid supply means (for example, a nozzle) for supplying a processing liquid used for the first liquid processing, and a liquid supply means for supplying a liquid that covers the surface of the member constituting the first processing section, , May be another member.

  The substrate processed by the substrate processing apparatus 100 is not limited to the semiconductor wafer W, and may be any substrate used in the field of semiconductor device manufacturing technology, such as a glass substrate or a ceramic substrate.

DESCRIPTION OF SYMBOLS 1 1st process part 2 2nd process part 10 Substrate holding part 14 Rotating mechanism 18 Substrate moving mechanism (elevating mechanism)
40 Treatment liquid supply nozzle (lower nozzle)
30 Reservoir 45 Liquid supply means (rinse nozzle)
50A, 55 1st discharge path (1st internal space 50A, 1st discharge port 55)
50B, 56 Second discharge path (second internal space 50B, second discharge port 56)

Claims (7)

In substrate processing equipment,
A first processing unit for performing a first liquid treatment on a substrate;
A second processing unit for performing a second liquid processing on the substrate above the first processing unit;
A substrate holder for holding the substrate;
A rotation mechanism for rotating the substrate holder;
A substrate moving mechanism capable of moving the substrate between the first processing unit and the second processing unit;
A processing liquid supply nozzle for supplying a processing liquid to the rotating substrate held and rotated by the substrate holding unit in the second processing unit;
A liquid supply means for supplying a liquid covering a surface of a member constituting the first processing unit when the second processing unit performs the second liquid processing on the substrate;
A first discharge path for discharging the liquid supplied to the first processing unit out of the substrate processing apparatus;
A second discharge path that is provided separately from the first discharge path and discharges the processing liquid supplied to the second processing unit to the outside of the substrate processing apparatus;
A substrate processing apparatus comprising:   The first processing unit includes a member that forms a storage unit capable of storing a liquid, and performs the first liquid processing in a state in which the substrate is immersed in the first processing liquid stored in the storage unit. The substrate processing apparatus according to claim 1, which is configured.   The member forming the storage part has a bottom wall and a peripheral wall provided at the periphery of the bottom wall, and a gap is provided between the bottom wall and the peripheral wall. The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus forms part of the first discharge path.   The substrate processing apparatus according to claim 3, wherein the bottom wall and the peripheral wall are relatively movable up and down.   The substrate processing apparatus according to claim 2, wherein a member that forms the storage portion is provided with a discharge port that communicates with the first discharge path. When performing the second liquid processing in the second processing unit, further comprising a cup body for receiving the second processing liquid flying from the substrate in the second processing unit,
The first discharge path is provided between the first processing unit and the cup body,
At least a portion of the second discharge path is formed by the internal space of the cup body,
The substrate processing apparatus according to claim 1. Using a substrate processing apparatus comprising: a first processing unit for performing a first liquid treatment on a substrate; and a second processing unit for performing a second liquid processing on a substrate above the first processing unit. In the substrate processing method,
In the state where the liquid is supplied to the surface of the member constituting the first processing unit and the surface of the member is covered with the liquid, the substrate is rotated in the second processing unit, and the rotated substrate is processed. Supplying a liquid to perform the second liquid treatment;
Discharging the liquid supplied to the surface of the member constituting the first processing unit to the outside of the substrate processing apparatus via the first discharge path;
Discharging the processing liquid supplied to the substrate in the second processing unit to the outside of the substrate processing apparatus through a second discharge path provided separately from the first discharge path;
A substrate processing method comprising:

Images