JP2012151413A - 半導体粒子の製造方法 - Google Patents

半導体粒子の製造方法 Download PDF

Info

Publication number
JP2012151413A
JP2012151413A JP2011010779A JP2011010779A JP2012151413A JP 2012151413 A JP2012151413 A JP 2012151413A JP 2011010779 A JP2011010779 A JP 2011010779A JP 2011010779 A JP2011010779 A JP 2011010779A JP 2012151413 A JP2012151413 A JP 2012151413A
Authority
JP
Japan
Prior art keywords
semiconductor
powder
concentration
dopant
predetermined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011010779A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012151413A5 (enrdf_load_stackoverflow
Inventor
Mikio Murozono
幹男 室園
Yoshihiro Akashi
義弘 明石
Yoji Oshima
洋司 大嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clean Venture 21 Corp
Original Assignee
Clean Venture 21 Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clean Venture 21 Corp filed Critical Clean Venture 21 Corp
Priority to JP2011010779A priority Critical patent/JP2012151413A/ja
Publication of JP2012151413A publication Critical patent/JP2012151413A/ja
Publication of JP2012151413A5 publication Critical patent/JP2012151413A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP2011010779A 2011-01-21 2011-01-21 半導体粒子の製造方法 Pending JP2012151413A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011010779A JP2012151413A (ja) 2011-01-21 2011-01-21 半導体粒子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011010779A JP2012151413A (ja) 2011-01-21 2011-01-21 半導体粒子の製造方法

Publications (2)

Publication Number Publication Date
JP2012151413A true JP2012151413A (ja) 2012-08-09
JP2012151413A5 JP2012151413A5 (enrdf_load_stackoverflow) 2014-02-27

Family

ID=46793358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011010779A Pending JP2012151413A (ja) 2011-01-21 2011-01-21 半導体粒子の製造方法

Country Status (1)

Country Link
JP (1) JP2012151413A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015159196A (ja) * 2014-02-24 2015-09-03 竹田 眞司 効率のいい太陽光発電装置と製造方法
JP2015537375A (ja) * 2012-10-18 2015-12-24 イー・２・ブイ・セミコンダクターズ 長波長における量子効率を向上させた画像センサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015537375A (ja) * 2012-10-18 2015-12-24 イー・２・ブイ・セミコンダクターズ 長波長における量子効率を向上させた画像センサ
JP2015159196A (ja) * 2014-02-24 2015-09-03 竹田 眞司 効率のいい太陽光発電装置と製造方法

Similar Documents

Publication Publication Date Title
KR101073744B1 (ko) 반도체 입자의 제조방법
CN107293349B (zh) 导电糊料组合物和用其制成的半导体装置
JP6127041B2 (ja) 熱電変換材料及びその製造方法
TWI745562B (zh) 導電糊料組成物及用其製成的半導體裝置
WO2008026688A1 (en) Method of forming mold for silicon ingot production, process for producing substrate for solar cell element, process for producing solar cell element, and mold for silicon ingot production
US20130298982A1 (en) Glass composition and its use in conductive silver paste
KR101497038B1 (ko) 전극 형성용 은 페이스트 조성물 및 이의 제조 방법
JP2014501445A (ja) リチウムを含有する導電性ペースト組成物およびそれから製造される物品
CN103329214A (zh) 含锂导电糊料组合物和由其制成的制品
WO2013085961A1 (en) Conductive silver paste for a metal-wrap-through silicon solar cell
TW201308630A (zh) 含有鉍－碲－氧化物之厚膜膏及其在半導體裝置製造中的使用
CN102674696A (zh) 一种玻璃粉及其制备方法和一种导电银浆及其制备方法
US9236506B2 (en) Conductive silver paste for a metal-wrap-through silicon solar cell
JP2012151413A (ja) 半導体粒子の製造方法
CN102543252A (zh) 一种宽高温烧结窗口硅太阳能电池正银浆料
CN105637046A (zh) 包含纳米级化学熔料的导电糊料或导电油墨
TW202029537A (zh) 熱電變換材料之晶片
CN104756198B (zh) 导电膏组合物及由其制成的半导体器件
CN106830691B (zh) 一种石墨烯掺杂型电子浆料用玻璃粉及其制备方法
JP5223048B2 (ja) 球状半導体粒子の製造方法
CN105940455A (zh) 导电糊料组合物及由其制成的半导体器件
CN105940458B (zh) 导电糊料组合物及由其制成的半导体器件
JP2010150106A (ja) 球状半導体粒子の製造方法
JP2010089977A (ja) 半導体粒子の製造方法
TW201419309A (zh) 厚膜銀膏及其於半導體裝置之製造中的應用

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20131206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150825

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20151222