JP2012138544A - Resin sealed semiconductor device and manufacturing method of the same - Google Patents

Resin sealed semiconductor device and manufacturing method of the same Download PDF

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JP2012138544A
JP2012138544A JP2010291566A JP2010291566A JP2012138544A JP 2012138544 A JP2012138544 A JP 2012138544A JP 2010291566 A JP2010291566 A JP 2010291566A JP 2010291566 A JP2010291566 A JP 2010291566A JP 2012138544 A JP2012138544 A JP 2012138544A
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resin
semiconductor device
internal
bellows
arrangement direction
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JP5501218B2 (en
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Eigo Fukuda
永吾 福田
Kazushige Kaneda
一茂 金田
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Nihon Inter Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To manufacture a resin sealed semiconductor device at high yield and in high quality without increasing the size of the whole device, and with improving heat radiation performance and high rigidity resulting in less warpage.SOLUTION: A plurality of lead frames 301-304 are arranged such that internal connection parts 301b-304b are arranged to face substantially the same plane and in a predetermined arrangement direction X. Internal leads 109-111 each bridging each of semiconductor devices 106-108 and the neighboring internal connection part to mechanically and electrically connect the both. An arrangement direction of the plurality of semiconductor devices, an arrangement direction of the plurality of the internal leads and a bridge extension direction of each internal lead are adjusted to be the predetermined arrangement direction X. The lead frames have accordion parts 301c-304c and 301d-304d, respectively, each folded around an axis in the predetermined arrangement direction X at a part encapsulated by an encapsulating resin 305 and the accordion part protrudes to the side on which the semiconductor device is mounted.

Description

本発明は、半導体素子をリードフレームに搭載して樹脂で封止した樹脂封止型半導体装置及びその製造方法に関する。   The present invention relates to a resin-encapsulated semiconductor device in which a semiconductor element is mounted on a lead frame and sealed with resin, and a method for manufacturing the same.

図１４から図１７に従来の一例の樹脂封止型半導体装置を示す。
図１４から図１７に示す従来例の樹脂封止型半導体装置１００は、４つに分割されたリードフレーム１０１，１０２，１０３，１０４と、封止樹脂１０５と、複数の半導体素子として３つのダイオード１０６，１０７，１０８と、３本のブリッジ型内部リード１０９，１１０，１１１とから構成されている。
リードフレーム１０１−１０４はそれぞれ、外部端子部１０１ａ−１０４ａと、内部接続部１０１ｂ−１０４ｂとを有する。内部接続部１０１ｂ−１０４ｂには、ダイオード１０６，１０７，１０８又は／及び内部リード１０９，１１０，１１１が半田接合される。 14 to 17 show an example of a conventional resin-encapsulated semiconductor device.
14 to 17, the resin-encapsulated semiconductor device 100 of the conventional example is divided into four lead frames 101, 102, 103, 104, an encapsulating resin 105, and three diodes as a plurality of semiconductor elements. 106, 107, 108 and three bridge-type internal leads 109, 110, 111.
Each of the lead frames 101-104 has external terminal portions 101a-104a and internal connection portions 101b-104b. Diodes 106, 107, 108 and / or internal leads 109, 110, 111 are soldered to the internal connection portions 101b-104b.

従来例の樹脂封止型半導体装置１００は、以下のような工程で製造される。
図１６及び図１８に示すように、ダイオード１０６，１０７，１０８の裏面がそれぞれ、内部接続部１０２ｂ，１０３ｂ，１０４ｂの表面に半田Ｓ（図１８参照）を介して接合されて固定され、ダイオード１０６，１０７，１０８の裏面電極がリードフレーム１０２，１０３，１０４にそれぞれ電気的に接続される。
さらに、内部リード１０９，１１０，１１１の各一端に形成された下端部裏面がそれぞれ、ダイオード１０６，１０７，１０８の表面に半田Ｓを介して接合されて固定されるとともに、各他端に形成された下端部裏面がそれぞれ、リードフレーム１０１，１０２，１０３の表面に半田Ｓを介して接合されて固定される。これにより、各ダイオード１０６，１０７，１０８の表面電極が一方向に隣接するリードフレーム１０１，１０２，１０３に電気的に接続される。
したがって、３つのダイオード１０６，１０７，１０８が直列に接続され、その両端の電極が外部端子部１０１ａと、外部端子部１０４ａとに取り出される。ダイオード１０６と１０７との間の電極が外部端子部１０２ａに取り出され、ダイオード１０７と１０８との間の電極が外部端子部１０３ａに取り出される。
リードフレーム１０１−１０４は、少なくとも内部接続部１０１ｂ−１０４ｂに関しては、略同一面上に面するように配置されるとともに一方向に一列に並べられている。この内部接続部１０１ｂ−１０４ｂの配列方向と、ダイオード１０６，１０７，１０８の配列方向と、内部リード１０９，１１０，１１１の配列方向、さらには、各内部リード１０９，１１０，１１１の架設延在方向は同一方向とされる。図中に付記するように、この方向を配列方向Ｘとし、配列方向Ｘに垂直で内部接続部１０１ｂ−１０４ｂに平行な方向をＹ、Ｘ方向及びＹ方向に垂直な方向をＺとする。 The resin-encapsulated semiconductor device 100 of the conventional example is manufactured by the following process.
As shown in FIGS. 16 and 18, the back surfaces of the diodes 106, 107, and 108 are bonded and fixed to the surfaces of the internal connection portions 102b, 103b, and 104b via solder S (see FIG. 18), respectively. , 107, 108 are electrically connected to the lead frames 102, 103, 104, respectively.
Further, the back surfaces of the lower ends formed at the respective one ends of the internal leads 109, 110, and 111 are respectively bonded and fixed to the surfaces of the diodes 106, 107, and 108 via the solder S, and formed at the other ends. The bottom surfaces of the lower ends are joined and fixed to the surfaces of the lead frames 101, 102, and 103 via solder S, respectively. As a result, the surface electrodes of the diodes 106, 107, 108 are electrically connected to the lead frames 101, 102, 103 adjacent in one direction.
Therefore, the three diodes 106, 107, 108 are connected in series, and the electrodes at both ends thereof are taken out to the external terminal portion 101a and the external terminal portion 104a. The electrode between the diodes 106 and 107 is taken out to the external terminal portion 102a, and the electrode between the diodes 107 and 108 is taken out to the external terminal portion 103a.
The lead frames 101-104 are arranged so as to face substantially the same plane at least with respect to the internal connection portions 101b-104b, and are arranged in a line in one direction. The arrangement direction of the internal connection portions 101b-104b, the arrangement direction of the diodes 106, 107, and 108, the arrangement direction of the internal leads 109, 110, and 111, and the extending direction of the internal leads 109, 110, and 111 Are in the same direction. As described in the drawing, this direction is taken as an array direction X, a direction perpendicular to the array direction X and parallel to the internal connection portions 101b-104b is taken as Y, and a direction perpendicular to the X direction and the Y direction is taken as Z.

以上のように一体に接続された構成が、図１９に示すように上型１２０ａと下型１２０ｂとからなる金型１２０に収められ、金型１２０に樹脂が注入、充填されて、この樹脂を硬化させることによって、図１４及び図１５に示すように、封止樹脂１０５が形成される。封止樹脂１０５は、リードフレーム１０１−１０４に被着接合してこれらを連結するとともに、ダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１を覆う。図１４に示すように、封止樹脂１０５のダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１を覆う部分は、凸状部１０５ａにより形成されている。   As shown in FIG. 19, the integrally connected structure is housed in a mold 120 made up of an upper mold 120a and a lower mold 120b, and resin is injected into and filled in the mold 120. By curing, a sealing resin 105 is formed as shown in FIGS. The sealing resin 105 is attached and bonded to the lead frames 101 to 104 to connect them, and covers the diodes 106, 107, and 108 and the internal leads 109, 110, and 111. As shown in FIG. 14, portions of the sealing resin 105 covering the diodes 106, 107, and 108 and the internal leads 109, 110, and 111 are formed by convex portions 105a.

金型１２０における樹脂注入口１２０ｃは、配列方向Ｘの一端部に設けられ、エアベント１２０ｄは、その相対する位置に設けられる。
したがって、樹脂注入口１２０ｃから注入された樹脂は、配列方向Ｘに沿って流れるため、その注入圧によってダイオード１０６，１０７，１０８や内部リード１０９，１１０，１１１の接合部に大きな負担をかけることが抑制される。これに比較して、Ｙ方向に樹脂を注入する場合には、その注入圧によってダイオード１０６，１０７，１０８や内部リード１０９，１１０，１１１の接合部に大きな負担をかけることとなる。接合不良等が生じて品質低下、歩留まりの低下が懸念される。 The resin inlet 120c in the mold 120 is provided at one end in the arrangement direction X, and the air vent 120d is provided at the opposite position.
Accordingly, since the resin injected from the resin injection port 120c flows along the arrangement direction X, the injection pressure places a heavy burden on the junctions of the diodes 106, 107, 108 and the internal leads 109, 110, 111. It is suppressed. In contrast, when the resin is injected in the Y direction, the injection pressure places a heavy burden on the junctions of the diodes 106, 107, 108 and the internal leads 109, 110, 111. There are concerns about poor quality and yield due to poor bonding and the like.

以上のような樹脂封止型半導体装置が、各種電気・電子機器の電力系に用いられている。これら機器の高密度実装の要請により、これに実装される樹脂封止型半導体装置にあっても、外形寸法が制限される。
その一方で、近年の高電力化に伴い、パワー系半導体素子の発熱量は高まり、これらの素子が搭載されるリードフレームにあっては、放熱性の改善が求められる。
従来、リードフレームによる放熱性の改善として、半導体素子の搭載部及び外部端子部を有するリードフレームの大型化や、このリードフレームの裏面に絶縁層を介してアルミ放熱板を接合することが行われてきた。 The resin-encapsulated semiconductor device as described above is used in power systems of various electric / electronic devices. Due to the demand for high-density mounting of these devices, the outer dimensions are limited even in the resin-encapsulated semiconductor device mounted thereon.
On the other hand, with the recent increase in power, the amount of heat generated by power semiconductor elements increases, and lead frames on which these elements are mounted are required to improve heat dissipation.
Conventionally, to improve the heat dissipation by the lead frame, the lead frame having a semiconductor element mounting portion and an external terminal portion is enlarged, and an aluminum heat sink is joined to the back surface of the lead frame via an insulating layer. I came.

リードフレームの裏面に絶縁層を介してアルミ放熱板を接合した従来例の樹脂封止型半導体装置２００が図２０から図２２に示される。図１４から図１７に示した従来例の樹脂封止型半導体装置１００と共通の部分は同一の符号により示す。図２２に示すように絶縁層２３１を介して、各リードフレーム１０１−１０４にアルミ放熱板２３０が接合される。図２１に示すようにアルミ放熱板２３０は、放熱性の確保のため、そのＹ軸の負の方向の端部がリードフレーム１０１−１０４より延出しており、図２０に示すように、凸状部２０５ａを有する封止樹脂２０５が大判になっている。   20 to 22 show a conventional resin-encapsulated semiconductor device 200 in which an aluminum heat sink is bonded to the back surface of a lead frame via an insulating layer. Portions common to the conventional resin-encapsulated semiconductor device 100 shown in FIGS. 14 to 17 are denoted by the same reference numerals. As shown in FIG. 22, an aluminum heat sink 230 is joined to each lead frame 101-104 via an insulating layer 231. As shown in FIG. 21, the aluminum heat sink 230 has a negative Y-axis end extending from the lead frame 101-104 in order to ensure heat dissipation. The sealing resin 205 having the portion 205a is large.

しかし、以上のような、リードフレームの大型化や、アルミ放熱板の適用では、樹脂封止型半導体装置の大型化を招き、高密度実装の要請に相反することとなる。また、アルミ放熱板の適用は、材料費、工程増により製造コストが増大する。
上記の封止樹脂の材料として熱伝導性の高い樹脂材料を適用することにより、放熱性を高める工夫もされてきたが、熱伝導性の高い樹脂材料ほど粘度が高く、高い注入圧が必要となるという傾向がある。そのため、配列方向Ｘに沿った注入方向以外の注入方向を選択する余地が狭まる。しかし、配列方向Ｘに沿った注入方向では、樹脂注入口と逆端部までの距離が長く、未充填を防ぐために注入圧を高める必要がさらに生じる。配列方向Ｘに沿った注入であっても、注入圧による負荷応力は大きくなってしまい、接合不良等が生じて品質や歩留まりが低下するおそれは高まる。
一方、以上のような樹脂封止型半導体装置にあっては、封止樹脂の硬化収縮により、特に配列方向であるＸ軸に反りが生じやすいという問題もある。 However, the increase in the size of the lead frame and the application of the aluminum heat sink as described above cause an increase in the size of the resin-encapsulated semiconductor device, which contradicts the demand for high-density mounting. In addition, the application of the aluminum heat sink increases the manufacturing cost due to an increase in material costs and processes.
By applying a resin material with high thermal conductivity as a material for the above-mentioned sealing resin, there has been devised to increase heat dissipation, but the resin material with higher thermal conductivity has higher viscosity and requires higher injection pressure. Tend to be. Therefore, the room for selecting an injection direction other than the injection direction along the arrangement direction X is narrowed. However, in the injection direction along the arrangement direction X, the distance between the resin injection port and the opposite end is long, and it is necessary to increase the injection pressure to prevent unfilling. Even in the injection along the arrangement direction X, the load stress due to the injection pressure is increased, and there is a high possibility that the quality and the yield may be reduced due to defective bonding or the like.
On the other hand, in the resin-encapsulated semiconductor device as described above, there is also a problem that the X-axis, which is the arrangement direction, is likely to warp due to curing shrinkage of the encapsulating resin.

本発明は以上の従来技術における問題に鑑みてなされたものであって、装置全体の大型化を招くことなく、放熱性が向上され、高剛性で反りが発生しにくい樹脂封止型半導体装置、及びこれを歩留まり良く高品質に製造することができる製造方法を提供することを課題とする。   The present invention has been made in view of the above problems in the prior art, and without increasing the overall size of the device, the heat dissipation is improved, the resin-encapsulated semiconductor device is highly rigid and hardly warps, It is another object of the present invention to provide a manufacturing method capable of manufacturing this with high yield and high quality.

以上の課題を解決するための請求項１記載の発明は、複数の半導体素子と、複数のリードフレームと、複数の内部リードと、封止樹脂とを備え、
前記複数のリードフレームはそれぞれ、内部接続部及び外部端子部を有する板状に形成され、
前記内部接続部が略同一面上に面するように配置されるとともに所定の配列方向に並べられ、
前記半導体素子は、それぞれ異なる前記内部接続部に搭載されて機械的・電気的に接続し、
前記内部リードは、前記半導体素子とこれに隣接する前記内部接続部との間に架設されてこの両者を機械的・電気的に接続し、
前記複数の半導体素子の配列方向と、前記複数の内部リードの配列方向と、前記各内部リードの架設延在方向とが前記所定の配列方向とされ、
前記半導体素子、前記内部リード及び前記内部接続部が前記封止樹脂により覆われて封止され、前記外部端子部が前記封止樹脂から露出する樹脂封止型半導体装置において、
前記リードフレームは、前記封止樹脂により封止されたその一部が前記所定の配列方向に沿った軸回りで曲げられることで構成された蛇腹部を有し、該蛇腹部が前記内部接続部の前記半導体素子が搭載された側に凸であることを特徴とする樹脂封止型半導体装置である。 The invention according to claim 1 for solving the above problems comprises a plurality of semiconductor elements, a plurality of lead frames, a plurality of internal leads, and a sealing resin.
Each of the plurality of lead frames is formed in a plate shape having an internal connection portion and an external terminal portion,
The internal connection portions are arranged so as to face substantially the same plane and are arranged in a predetermined arrangement direction,
The semiconductor elements are mounted on the different internal connection portions and mechanically and electrically connected,
The internal lead is constructed between the semiconductor element and the internal connection part adjacent to the semiconductor element, and mechanically and electrically connects both of them.
The arrangement direction of the plurality of semiconductor elements, the arrangement direction of the plurality of internal leads, and the extending direction of the internal leads are the predetermined arrangement direction,
In the resin-encapsulated semiconductor device in which the semiconductor element, the internal lead, and the internal connection portion are covered and sealed with the sealing resin, and the external terminal portion is exposed from the sealing resin.
The lead frame has a bellows part formed by bending a part of the lead frame sealed with the sealing resin around an axis along the predetermined arrangement direction, and the bellows part is the internal connection part. The resin-encapsulated semiconductor device is characterized in that it is convex on the side on which the semiconductor element is mounted.

請求項２記載の発明は、前記蛇腹部を前記リードフレームの縁から相対する縁までに亘って前記所定の配列方向に長く１本又は２本以上有し、１本の蛇腹部は、前記所定の配列方向に沿った４条の折り目により断面矩形状に形成された請求項１に記載の樹脂封止型半導体装置である。   According to a second aspect of the present invention, the bellows portion has one or two or more long in the predetermined arrangement direction from the edge of the lead frame to the opposite edge, and one bellows portion is the predetermined bellows portion. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is formed in a rectangular cross section by four folds along the arrangement direction.

請求項３記載の発明は、前記蛇腹部は、前記内部接続部と前記外部端子部との間の部分に形成されている請求項１又は請求項２に記載の樹脂封止型半導体装置である。   The invention according to claim 3 is the resin-encapsulated semiconductor device according to claim 1 or 2, wherein the bellows portion is formed in a portion between the internal connection portion and the external terminal portion. .

請求項４記載の発明は、前記蛇腹部は、前記内部接続部を介して前記外部端子部と相対する部分に形成されている請求項１から請求項３のうちいずれか一に記載の樹脂封止型半導体装置である。   According to a fourth aspect of the present invention, the bellows portion is formed at a portion facing the external terminal portion via the internal connection portion. The resin seal according to any one of the first to third aspects. It is a stationary semiconductor device.

請求項５載の発明は、前記蛇腹部が凸に形成された側を覆う前記封止樹脂の外表面は、前記蛇腹部に沿って凹凸状に形成されている請求項１から請求項４のうちいずれか一に記載の樹脂封止型半導体装置である。   According to a fifth aspect of the present invention, the outer surface of the sealing resin that covers the side on which the bellows portion is convex is formed in an uneven shape along the bellows portion. The resin-encapsulated semiconductor device according to any one of the above.

請求項６の発明は、前記蛇腹部が凸に形成された側を覆う前記封止樹脂の外表面は、互いに隣接する複数の前記蛇腹部間の凹部に対応することなく平面状に形成されている請求項１から請求項４のうちいずれか一に記載の樹脂封止型半導体装置である。   According to a sixth aspect of the present invention, an outer surface of the sealing resin that covers a side on which the bellows portion is convex is formed in a flat shape without corresponding to the concave portions between the plurality of bellows portions adjacent to each other. The resin-encapsulated semiconductor device according to any one of claims 1 to 4.

請求項７の発明は、請求項１から請求項６のうちいずれか一に記載の樹脂封止型半導体装置を製造する方法であって、
前記のとおり接続された前記複数のリードフレーム、前記複数の半導体素子及び前記複数の内部リードを、前記封止樹脂を成型する金型内に収め、
前記半導体素子及び前記内部リードとの間に、前記蛇腹部が介在する位置に設けられた注入口から当該蛇腹部に向けて、前記封止樹脂を構成する樹脂を前記金型内に注入する樹脂成型工程を備える樹脂封止型半導体装置の製造方法である。 Invention of Claim 7 is a method of manufacturing the resin-encapsulated semiconductor device according to any one of Claims 1 to 6,
The plurality of lead frames connected as described above, the plurality of semiconductor elements, and the plurality of internal leads are housed in a mold for molding the sealing resin,
Resin for injecting a resin constituting the sealing resin into the mold from an injection port provided at a position where the bellows part is interposed between the semiconductor element and the internal lead toward the bellows part A method for manufacturing a resin-encapsulated semiconductor device including a molding step.

本発明の樹脂封止型半導体装置によれば、半導体素子が搭載されて接続されるリードフレームに蛇腹部が構成されるので、装置全体の大型化を招くことなく、放熱性が向上されるという効果がある。また、蛇腹部により曲剛性が向上し、これにより反りが発生しにくいという効果がある。
本発明の製造方法によれば、金型内に注入された樹脂は、半導体素子及び内部リードに直接的に当たることなく、まず先に蛇腹部に当たり蛇腹部に沿って回り込むため、樹脂の注入圧によって半導体素子及び内部リードに負荷される応力を緩和することができ、これにより樹脂の注入圧による内部不良の発生を抑制することで、樹脂封止型半導体装置を歩留まり良く高品質に製造することができるという効果がある。 According to the resin-encapsulated semiconductor device of the present invention, since the bellows portion is formed on the lead frame on which the semiconductor element is mounted and connected, heat dissipation is improved without increasing the size of the entire device. effective. Further, the bellows portion has an effect that the bending rigidity is improved, and thus warpage is hardly generated.
According to the manufacturing method of the present invention, the resin injected into the mold does not directly hit the semiconductor element and the internal lead, but first hits the bellows part and wraps around the bellows part. The stress applied to the semiconductor element and the internal lead can be relieved, thereby suppressing the occurrence of internal defects due to the injection pressure of the resin, so that the resin-encapsulated semiconductor device can be manufactured with high yield and high quality. There is an effect that can be done.

本発明の第１実施形態に係る樹脂封止型半導体装置の表側から見た斜視図である。It is the perspective view seen from the front side of the resin sealing type semiconductor device concerning a 1st embodiment of the present invention. 本発明の第１実施形態に係る樹脂封止型半導体装置の裏側から見た斜視図である。It is the perspective view seen from the back side of the resin-sealed semiconductor device which concerns on 1st Embodiment of this invention. 本発明の第１実施形態に係る樹脂封止型半導体装置の内部構造を表側から見た斜視図である。It is the perspective view which looked at the internal structure of the resin-sealed semiconductor device which concerns on 1st Embodiment of this invention from the front side. 本発明の第１実施形態に係るリードフレームの平面図(a)及びＢ−Ｂ断面図(b)である。1A is a plan view of a lead frame according to a first embodiment of the present invention, and FIG. 本発明の第１実施形態に係る樹脂成型用金型の平面レイアウト図(a)及び横断面図(b)である。FIG. 3 is a plan layout view (a) and a cross-sectional view (b) of a resin molding die according to the first embodiment of the present invention. 本発明の第２実施形態に係る樹脂封止型半導体装置の表側から見た斜視図である。It is the perspective view seen from the front side of the resin-sealed semiconductor device which concerns on 2nd Embodiment of this invention. 本発明の第２実施形態に係る樹脂封止型半導体装置の裏側から見た斜視図である。It is the perspective view seen from the back side of the resin-sealed semiconductor device which concerns on 2nd Embodiment of this invention. 本発明の第２実施形態に係る樹脂封止型半導体装置の内部構造を表側から見た斜視図である。It is the perspective view which looked at the internal structure of the resin-sealed semiconductor device which concerns on 2nd Embodiment of this invention from the front side. 本発明の第２実施形態に係るリードフレームの平面図(a)及びＣ−Ｃ断面図(b)である。It is the top view (a) and CC sectional drawing (b) of the lead frame which concern on 2nd Embodiment of this invention. シミュレーションに係る従来例１の温度分布図である。It is a temperature distribution figure of the prior art example 1 which concerns on simulation. シミュレーションに係る従来例２の温度分布図である。It is a temperature distribution figure of the prior art example 2 which concerns on simulation. シミュレーションに係る本発明例１の温度分布図である。It is a temperature distribution figure of example 1 of the present invention concerning simulation. シミュレーションに係る本発明例２の温度分布図である。It is a temperature distribution figure of example 2 of the present invention concerning simulation. 従来の一例に係る樹脂封止型半導体装置の表側から見た斜視図である。It is the perspective view seen from the front side of the resin sealing type semiconductor device which concerns on an example of the past. 従来の一例に係る樹脂封止型半導体装置の裏側から見た斜視図である。It is the perspective view seen from the back side of the resin sealing type semiconductor device which concerns on an example of the past. 従来の一例に係る樹脂封止型半導体装置の内部構造を表側から見た斜視図である。It is the perspective view which looked at the internal structure of the resin sealing type semiconductor device which concerns on an example of the past from the front side. 従来の一例に係るリードフレームの平面図(a)及びＣ−Ｃ断面図(b)である。It is the top view (a) and CC sectional view (b) of the lead frame concerning an example of the past. リードフレーム上の半導体素子及び内部リードを通る縦断面図である。It is a longitudinal cross-sectional view which passes through the semiconductor element and internal lead on a lead frame. 従来例に係る樹脂成型用金型の平面レイアウト図(a)及び横断面図(b)である。It is the plane layout figure (a) and the cross-sectional view (b) of the metal mold for resin molding which concerns on a prior art example. アルミ放熱板を有する従来の一例に係る樹脂封止型半導体装置の表側から見た斜視図である。It is the perspective view seen from the front side of the resin-sealed semiconductor device which concerns on an example which has an aluminum heat sink. アルミ放熱板を有する従来の一例に係る樹脂封止型半導体装置の裏側から見た斜視図である。It is the perspective view seen from the back side of the resin-sealed semiconductor device which concerns on an example which has an aluminum heat sink. アルミ放熱板を有する従来の一例に係る樹脂封止型半導体装置の部分断面図である。It is a fragmentary sectional view of the resin-sealed type semiconductor device concerning an example of the past which has an aluminum heat sink.

以下に本発明の一実施形態につき図面を参照して説明する。以下は本発明の一実施形態であって本発明を限定するものではない。   An embodiment of the present invention will be described below with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

〔第１実施形態〕
まず、本発明の第１実施形態につき説明する。図１から図４に本発明の第１実施形態に係る樹脂封止型半導体装置３００を示す。上記従来例と同様の部分は同一の符号で示す。
本実施形態の樹脂封止型半導体装置３００は、４つに分割されたリードフレーム３０１，３０２，３０３，３０４と、封止樹脂３０５と、複数の半導体素子として３つのダイオード１０６，１０７，１０８と、３本のブリッジ型内部リード１０９，１１０，１１１とから構成されている。
リードフレーム３０１−３０４はそれぞれ、外部端子部１０１ａ−１０４ａと、内部接続部３０１ｂ−３０４ｂと、蛇腹部３０１ｃ−３０４ｃと、蛇腹部３０１ｄ−３０４ｄとを有する。内部接続部３０１ｂ−３０４ｂには、ダイオード１０６，１０７，１０８又は／及び内部リード１０９，１１０，１１１が半田接合される。 [First Embodiment]
First, a first embodiment of the present invention will be described. 1 to 4 show a resin-encapsulated semiconductor device 300 according to the first embodiment of the present invention. The same parts as those in the conventional example are denoted by the same reference numerals.
The resin-encapsulated semiconductor device 300 according to this embodiment includes four lead frames 301, 302, 303, and 304, an encapsulating resin 305, and three diodes 106, 107, and 108 as a plurality of semiconductor elements. It is composed of three bridge-type internal leads 109, 110, and 111.
Each of the lead frames 301-304 includes an external terminal portion 101a-104a, an internal connection portion 301b-304b, a bellows portion 301c-304c, and a bellows portion 301d-304d. Diodes 106, 107, 108 and / or internal leads 109, 110, 111 are soldered to the internal connection portions 301b-304b.

本樹脂封止型半導体装置３００は、以下のような工程で製造される。
図３及び図１８に示すように、ダイオード１０６，１０７，１０８の裏面がそれぞれ、内部接続部３０２ｂ，３０３ｂ，３０４ｂの表面に半田Ｓ（図１８参照）を介して接合されて固定され、ダイオード１０６，１０７，１０８の裏面電極がリードフレーム３０２，３０３，３０４にそれぞれ電気的に接続される。
さらに、内部リード１０９，１１０，１１１の各一端に形成された下端部裏面がそれぞれ、ダイオード１０６，１０７，１０８の表面に半田Ｓを介して接合されて固定されるとともに、各他端に形成された下端部裏面がそれぞれ、リードフレーム３０１，３０２，３０３の表面に半田Ｓを介して接合されて固定される。これにより、各ダイオード１０６，１０７，１０８の表面電極が一方向に隣接するリードフレーム３０１，３０２，３０３に電気的に接続される。
したがって、３つのダイオード１０６，１０７，１０８が直列に接続され、その両端の電極が外部端子部１０１ａと、外部端子部１０４ａとに取り出される。ダイオード１０６と１０７との間の電極が外部端子部１０２ａに取り出され、ダイオード１０７と１０８との間の電極が外部端子部１０３ａに取り出される。
リードフレーム３０１−３０４は、少なくとも内部接続部３０１ｂ−３０４ｂに関しては、略同一面上に面するように配置されるとともに一方向に一列に並べられている。この内部接続部３０１ｂ−３０４ｂの配列方向と、ダイオード１０６，１０７，１０８の配列方向と、内部リード１０９，１１０，１１１の配列方向、さらには、各内部リード１０９，１１０，１１１の架設延在方向は同一方向とされる。図中に付記するように、この方向を配列方向Ｘとし、配列方向Ｘに垂直で内部接続部３０１ｂ−３０４ｂに平行な方向をＹ、Ｘ方向及びＹ方向に垂直な方向をＺとする。 The resin-encapsulated semiconductor device 300 is manufactured by the following process.
As shown in FIGS. 3 and 18, the back surfaces of the diodes 106, 107, and 108 are joined and fixed to the surfaces of the internal connection portions 302b, 303b, and 304b via solder S (see FIG. 18), respectively. , 107, and 108 are electrically connected to the lead frames 302, 303, and 304, respectively.
Further, the back surfaces of the lower ends formed at the respective one ends of the internal leads 109, 110, and 111 are respectively bonded and fixed to the surfaces of the diodes 106, 107, and 108 via the solder S, and formed at the other ends. The rear surfaces of the lower ends are bonded and fixed to the surfaces of the lead frames 301, 302, and 303 via solder S, respectively. Thereby, the surface electrodes of the diodes 106, 107, 108 are electrically connected to the lead frames 301, 302, 303 adjacent in one direction.
Therefore, the three diodes 106, 107, 108 are connected in series, and the electrodes at both ends thereof are taken out to the external terminal portion 101a and the external terminal portion 104a. The electrode between the diodes 106 and 107 is taken out to the external terminal portion 102a, and the electrode between the diodes 107 and 108 is taken out to the external terminal portion 103a.
The lead frames 301-304 are arranged so as to face substantially the same plane at least with respect to the internal connection portions 301b-304b, and are arranged in a line in one direction. The arrangement direction of the internal connection portions 301b to 304b, the arrangement direction of the diodes 106, 107, and 108, the arrangement direction of the internal leads 109, 110, and 111, and the extending direction of the internal leads 109, 110, and 111 Are in the same direction. As indicated in the drawing, this direction is the arrangement direction X, Y is the direction perpendicular to the arrangement direction X and parallel to the internal connection portions 301b to 304b, and Z is the direction perpendicular to the X direction and the Y direction.

以上のように一体に接続された構成が、図５に示すように上型３２０ａと下型１２０ｂとからなる金型３２０に収められ、金型３２０に樹脂が注入、充填されて、この樹脂を硬化させることによって、図１及び図２に示すように、封止樹脂３０５が形成される。封止樹脂３０５は、リードフレーム３０１−３０４に被着接合してこれらを連結するとともに、ダイオード１０６，１０７，１０８、内部リード１０９，１１０，１１１及び内部接続部３０１ｂ−３０４ｂを覆う。図１に示すように、封止樹脂３０５のダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１を覆う部分は、凸状部３０５ａにより形成されている。   As shown in FIG. 5, the integrally connected structure is housed in a mold 320 composed of an upper mold 320a and a lower mold 120b, and resin is injected into and filled in the mold 320. By curing, a sealing resin 305 is formed as shown in FIGS. The sealing resin 305 is attached and bonded to the lead frames 301-304 to connect them, and covers the diodes 106, 107, 108, the internal leads 109, 110, 111, and the internal connection portions 301b-304b. As shown in FIG. 1, portions of the sealing resin 305 that cover the diodes 106, 107, and 108 and the internal leads 109, 110, and 111 are formed by convex portions 305a.

図５に示すように金型３２０における樹脂注入口３２０ｃは、Ｙ軸方向の一端部の中央部に設けられ、２つのエアベント３２０ｄ１，３２０ｄ２は、その相対する端部の両隅寄りにそれぞれ設けられる。
したがって、樹脂注入口３２０ｃから注入された樹脂は、配列方向Ｘに垂直なＹ軸方向に沿って金型３２０内に流入することとなる。 As shown in FIG. 5, the resin injection port 320c in the mold 320 is provided at the center of one end in the Y-axis direction, and the two air vents 320d1 and 320d2 are provided near both corners of the opposite ends. .
Therefore, the resin injected from the resin injection port 320 c flows into the mold 320 along the Y-axis direction perpendicular to the arrangement direction X.

本樹脂封止型半導体装置３００の上述の従来例と異なる点は、リードフレーム３０１−３０４が蛇腹部３０１ｃ−３０４ｃ、３０１ｄ−３０４ｄを有する点、この蛇腹部に対応して上型３２０ａの内面が凹凸状に形成された点、金型３２０の樹脂注入口３２０ｃが変更された点である。   The resin-encapsulated semiconductor device 300 is different from the above-described conventional example in that the lead frame 301-304 has bellows portions 301c-304c, 301d-304d, and the inner surface of the upper die 320a corresponds to the bellows portions. This is a point formed in a concavo-convex shape and a point where the resin injection port 320c of the mold 320 is changed.

蛇腹部３０１ｃ−３０４ｃ、３０１ｄ−３０４ｄは、リードフレーム３０１−３０４の一部がＸ軸回りで曲げられることで構成されている。蛇腹部３０１ｃ−３０４ｃ、３０１ｄ−３０４ｄは、内部接続部３０１ｂ−３０４ｂの表面側に凸である。各１本の蛇腹部は、Ｘ軸方向に沿った４条の折り目により断面矩形状に形成されており、この４条の折り目が、内部接続部３０１ｂ−３０４ｂの表面側から見て谷折、山折、山折、谷折の順とされることにより、内部接続部３０１ｂ−３０４ｂの表面側に断面矩形状で凸である。このように、明確な折り目を付けずに波形に形成しても良い。また、適宜折り目にはＲが付けられる。   The bellows portions 301c-304c and 301d-304d are configured by bending a part of the lead frame 301-304 around the X axis. The bellows portions 301c-304c and 301d-304d are convex on the surface side of the internal connection portions 301b-304b. Each one of the bellows portions is formed into a rectangular cross section by four folds along the X-axis direction, and these four folds are valley-folded when viewed from the surface side of the internal connection portions 301b-304b. Due to the order of mountain folds, mountain folds, and valley folds, the surface of the internal connection portions 301b to 304b is convex in a rectangular shape. In this way, it may be formed in a waveform without giving a clear crease. Further, R is appropriately attached to the fold.

蛇腹部３０１ｃ−３０４ｃは、内部接続部３０１ｂ−３０４ｂと外部端子部１０１ａ−１０４ａとの間の部分に形成され、蛇腹部３０１ｄ−３０４ｄは、内部接続部３０１ｂ−３０４ｂを介して外部端子部１０１ａ−１０４ａと相対する部分に形成されている。   The bellows portion 301c-304c is formed at a portion between the internal connection portion 301b-304b and the external terminal portion 101a-104a, and the bellows portion 301d-304d is connected to the external terminal portion 101a- via the internal connection portion 301b-304b. It is formed at a portion facing 104a.

蛇腹部３０１ｃ−３０４ｃ、３０１ｄ−３０４ｄを内部接続部３０１ｂ−３０４ｂの表面側に凸にしたので、図５に示すように、樹脂注入口３２０ｃから金型３２０内に注入された樹脂は、ダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１に直接的に当たることなく、まず先に蛇腹部３０１ｄ−３０４ｄに当たり蛇腹部に沿って回り込むため、樹脂の注入圧によってダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１に負荷される応力を緩和することができる。注入された樹脂は、図５(a)中に矢印Ｅで示すように、蛇腹部３０１ｄ−３０４ｄに沿ってＸ軸方向に両側に流れ、蛇腹部３０１ｄ−３０４ｄの端部を回り込んで、今度はＸ軸方向の内側に向かって流れて内部接続部３０１ｂ−３０４ｂ、ダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１の周囲のキャビティに充填される。したがって、配列方向Ｘに垂直なＹ軸方向に樹脂を注入しても、ダイオード及び内部リードの周囲のキャビティにおいては配列方向Ｘに樹脂は流入し、樹脂の注入圧によって半導体素子及び内部リードに負荷される応力を緩和することができる。
また、注入直後に蛇腹部３０１ｄ−３０４ｄに当たった樹脂の一部は、蛇腹部３０１ｄ−３０４ｄを乗り越えて、ダイオード及び内部リードの周囲のキャビティに流入するものの、その量が少ないことと、蛇腹部３０１ｄ−３０４ｄに当たった後であるために半導体素子及び内部リードに負荷される応力は緩和される。
以上の効果を得るために、本樹脂成型工程において、ダイオード１０６，１０７，１０８及び内部リード１０９，１１０，１１１との間に、いずれかの蛇腹部が介在する位置に設けられた注入口から当該蛇腹部に向けて、封止樹脂３０５を構成する樹脂を注入する。 Since the bellows portions 301c-304c, 301d-304d are convex on the surface side of the internal connection portions 301b-304b, the resin injected into the mold 320 from the resin injection port 320c is formed in the diode 106 as shown in FIG. , 107, 108 and the internal leads 109, 110, 111, without first directly hitting the bellows portions 301d-304d, and then wrapping around the bellows portions, the diodes 106, 107, 108 and the internal leads are injected by the resin injection pressure. The stress applied to 109, 110, 111 can be relaxed. The injected resin flows to both sides in the X-axis direction along the bellows portions 301d-304d as shown by arrow E in FIG. 5 (a), wraps around the end portions of the bellows portions 301d-304d, and this time. Flows inward in the X-axis direction and fills the cavities around the internal connection portions 301b-304b, the diodes 106, 107, 108 and the internal leads 109, 110, 111. Therefore, even if the resin is injected in the Y-axis direction perpendicular to the arrangement direction X, the resin flows in the arrangement direction X in the cavity around the diode and the internal lead, and the semiconductor element and the internal lead are loaded by the injection pressure of the resin. Stress can be relieved.
Further, a part of the resin hitting the bellows portions 301d-304d immediately after injection passes over the bellows portions 301d-304d and flows into the cavities around the diode and the internal lead, but the amount of the resin is small. Since it is after hitting 301d-304d, the stress applied to the semiconductor element and the internal lead is relaxed.
In order to obtain the above effect, in this resin molding step, the injection port provided at a position where any one of the bellows portions is interposed between the diodes 106, 107, and 108 and the internal leads 109, 110, and 111. A resin constituting the sealing resin 305 is injected toward the bellows part.

図５に示すように蛇腹部に対応して上型３２０ａの内面が凹凸状に形成され、その凸部３２０ｅ，３２０ｆがＸ軸方向に壁状に延在するので、蛇腹部と同様に、Ｙ軸方向の樹脂流入速度を緩和し、Ｘ軸方向に案内する効果を奏する。   As shown in FIG. 5, the inner surface of the upper mold 320a is formed in a concavo-convex shape corresponding to the bellows portion, and the convex portions 320e and 320f extend in a wall shape in the X-axis direction. The resin inflow speed in the axial direction is reduced, and the effect of guiding in the X-axis direction is achieved.

また、金型３２０における樹脂注入口３２０ｃは、Ｙ軸方向の一端部の中央部に設けられているので、図１９に示した従来の金型１２０に比較して、金型内キャビティの注入口から最も遠い部分までの距離を短くすることができる。さらに、その部分の近傍に２つのエアベント３２０ｄ１，３２０ｄ２が設けられる。したがって、未充填を効率よく排除することができる。   Further, since the resin injection port 320c in the mold 320 is provided at the center of one end portion in the Y-axis direction, the injection port of the cavity in the mold is compared with the conventional mold 120 shown in FIG. The distance from the farthest to the farthest part can be shortened. Further, two air vents 320d1 and 320d2 are provided in the vicinity of the portion. Therefore, unfilling can be efficiently eliminated.

以上のようにして構成された樹脂封止型半導体装置３００にあっては、封止樹脂３０５は蛇腹部の凸側に沿って凹凸状に形成され、図１に示すように、封止樹脂３０５は、中央の凸状部３０５ａに、２本の凸状部３０５ｂ，３０５ｃを加えた３本の凸状部３０５ａ，３０５ｂ，３０５ｃを形成している。これにより封止樹脂３０５は、比較的均一な厚みで形成され、その表面積は大きくなる。
また、樹脂封止型半導体装置３００にあっては、蛇腹部３０１ｃ−３０４ｃ、３０１ｄ−３０４ｄによって、リードフレーム３０１−３０４の容積及び表面積が大きくなり、放熱性が向上する。さらに蛇腹部３０１ｃ−３０４ｃ、３０１ｄ−３０４ｄによって、曲剛性が向上して、Ｘ軸方向を反らせる反りが発生しにくくなる。
以上により、樹脂封止型半導体装置の品質・信頼性・歩留まりの低下が改善される。 In the resin-encapsulated semiconductor device 300 configured as described above, the encapsulating resin 305 is formed in a concavo-convex shape along the convex side of the bellows portion, and as shown in FIG. Forms three convex portions 305a, 305b, and 305c by adding two convex portions 305b and 305c to the central convex portion 305a. Thereby, the sealing resin 305 is formed with a relatively uniform thickness, and its surface area is increased.
Further, in the resin-encapsulated semiconductor device 300, the volume and surface area of the lead frames 301-304 are increased by the bellows portions 301c-304c, 301d-304d, and the heat dissipation is improved. Further, the bellows portions 301c-304c and 301d-304d improve the flexural rigidity and are less likely to warp in the X-axis direction.
As described above, quality, reliability, and yield reduction of the resin-encapsulated semiconductor device are improved.

〔第２実施形態〕
次に、本発明の第２実施形態につき説明する。図６から図９に本発明の第２実施形態に係る樹脂封止型半導体装置４００を示す。本実施形態は、上記第１実施形態に対して蛇腹部の本数を２倍にし、封止樹脂の形状及びこれに対応する金型の形状を変更したものであって、その他は上記第１実施形態と同様である。上記第１実施形態と同様の部分は同一の符号で示し説明を省略する。 [Second Embodiment]
Next, a second embodiment of the present invention will be described. 6 to 9 show a resin-encapsulated semiconductor device 400 according to the second embodiment of the present invention. In this embodiment, the number of bellows portions is doubled compared to the first embodiment, and the shape of the sealing resin and the shape of the mold corresponding thereto are changed. It is the same as the form. Portions similar to those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

本樹脂封止型半導体装置４００に適用されるリードフレーム４０１においては、図８及び図９に示すように、２本の蛇腹部４０１ｃ１，４０１ｃ２が、内部接続部４０１ｂと外部端子部１０１ａとの間の部分に形成され、他の２本の蛇腹部４０１ｄ１，４０１ｄ２が、内部接続部４０１ｂを介して外部端子部１０１ａと相対する部分に形成されている。他のリードフレーム４０２，４０３，４０４についても同様に構成されている。   In the lead frame 401 applied to the resin-encapsulated semiconductor device 400, as shown in FIGS. 8 and 9, two bellows portions 401c1 and 401c2 are provided between the internal connection portion 401b and the external terminal portion 101a. The other two bellows portions 401d1 and 401d2 are formed in a portion facing the external terminal portion 101a via the internal connection portion 401b. The other lead frames 402, 403, and 404 are similarly configured.

本樹脂封止型半導体装置４００に適用される封止樹脂４０５は、蛇腹部の凸側に沿って凹凸状に形成されない。蛇腹部が凸に形成された表面側を覆う封止樹脂４０５の外表面は、互いに隣接する複数の蛇腹部間の凹部に対応することなく平面状に形成されている。
したがって、封止樹脂４０５を成型するための金型として、図５(b)に示す凸部３２０ｅ，３２０ｆが排されて平面状にされた天井面を有する上型が適用される。これにより、隣接する２本の蛇腹部間の間隔が狭くなっても、樹脂の未充填を防ぐことができる。 The sealing resin 405 applied to the resin-encapsulated semiconductor device 400 is not formed in an uneven shape along the convex side of the bellows part. The outer surface of the sealing resin 405 covering the surface side on which the bellows portions are convex is formed in a flat shape without corresponding to the recesses between the plurality of adjacent bellows portions.
Therefore, as the mold for molding the sealing resin 405, an upper mold having a flat ceiling surface from which the protrusions 320e and 320f shown in FIG. Thereby, even if the space | interval between two adjacent bellows parts becomes narrow, unfilling of resin can be prevented.

本実施形態によれば、上記第１実施形態と同様に、４列の蛇腹部により、樹脂成型用の金型内においてＹ軸方向の樹脂流入速度を緩和し、Ｘ軸方向に案内する効果を奏する。
また本実施形態によれば、上記第１実施形態に比較してさらに曲剛性が向上して、Ｘ軸方向を反らせる反りがさらに発生しにくくなる。
また本実施形態によれば、上記第１実施形態に比較してリードフレーム４０１−４０４の容積及び表面積がさらに大きくなる。 According to the present embodiment, as in the first embodiment, the effect of guiding the resin flow rate in the Y-axis direction in the mold for resin molding is reduced and guided in the X-axis direction by the four rows of bellows portions. Play.
Further, according to the present embodiment, the bending rigidity is further improved as compared with the first embodiment, and the warp that warps the X-axis direction is further less likely to occur.
In addition, according to the present embodiment, the volume and surface area of the lead frames 401 to 404 are further increased as compared with the first embodiment.

〔発熱シミュレーション〕
本発明と従来技術の放熱性を比較するため、発熱シミュレーションを行った。
対象としたのは２つの本発明例１，２及び２つの従来例１，２である。本発明例１は上記第１実施形態の樹脂封止型半導体装置３００（図１〜図４）に従う構成、本発明例２は上記第２実施形態の樹脂封止型半導体装置４００（図６〜図９）に従う構成、従来例１は上記従来例の樹脂封止型半導体装置１００（図１４〜図１７）に従う構成、従来例２は上記従来例の樹脂封止型半導体装置２００（図２０〜図２２）に従う構成である。 [Heat generation simulation]
In order to compare the heat dissipation of the present invention and the prior art, a heat generation simulation was performed.
The two objects are the present invention examples 1 and 2 and the two conventional examples 1 and 2. Example 1 of the present invention is a configuration according to the resin-encapsulated semiconductor device 300 (FIGS. 1 to 4) of the first embodiment, and Example 2 of the present invention is a resin-encapsulated semiconductor device 400 (FIGS. 6 to 6) of the second embodiment. 9), the conventional example 1 is the structure according to the above-described conventional resin-encapsulated semiconductor device 100 (FIGS. 14 to 17), and the conventional example 2 is the above-described conventional resin-encapsulated semiconductor device 200 (FIG. 20-FIG. 20). 22).

さらに本発明例１，２及び従来例１，２は、共通して以下の条件に従う。
各構成部品の熱伝導率（Ｗ／ｍｍ＊Ｋ）は、半導体素子（ダイオード１０６−１０８）が８４×１０-3、銅（リードフレーム及び内部リード）が３９１×１０-3、半田Ｓが５０．３×１０-3、封止樹脂が０．５×１０-3、と設定した。各樹脂封止型半導体装置１００〜４００のＸ軸方向の寸法を９５．０（ｍｍ）とした。従来例１，２のリードフレーム１０１−１０４に対して、本発明例１のリードフレーム３０１−３０４は、約２倍の表面積を、本発明例２のリードフレーム４０１−４０４は、約２．４倍の表面積を有する。 Further, Examples 1 and 2 of the present invention and Examples 1 and 2 of the prior art commonly follow the following conditions.
The thermal conductivity (W / mm * K) of each component is 84 × 10 −3 for semiconductor elements (diodes 106-108), 391 × 10 −3 for copper (lead frame and internal leads), and 50 for solder S. .3 × 10 −3 and the sealing resin was set to 0.5 × 10 −3 . The dimension in the X-axis direction of each of the resin-encapsulated semiconductor devices 100 to 400 was 95.0 (mm). Compared to the lead frames 101-104 of the conventional examples 1 and 2, the lead frame 301-304 of the present invention example 1 has about twice the surface area, and the lead frame 401-404 of the present invention example 2 has about 2.4 times the surface area. Double the surface area.

以上の条件で樹脂封止型半導体装置１００〜４００がそれぞれ、気温８０°で無風・自然空冷状態の雰囲気内に設置され、ダイオード１０６に２０（Ｗ）、ダイオード１０７に２０（Ｗ）、ダイオード１０８に１０（Ｗ）の発熱がある場合の温度分布を計算した。その結果は、表１及び図１０から図１３に示す通りとなった。すなわち、各半導体素子（ダイオード１０６−１０８）の温度は表１に示す通りとなり、封止樹脂を除く部分の温度分布ついては、従来例１は図１０に、従来例２は図１１に、本発明例１は図１２に、本発明例２は図１３に示す通りとなった。   Under the above conditions, each of the resin-encapsulated semiconductor devices 100 to 400 is installed in an atmosphere of air temperature 80 ° and no wind and natural air cooling. The diode 106 has 20 (W), the diode 107 has 20 (W), and the diode 108 has. The temperature distribution was calculated when there was 10 (W) heat generation. The results were as shown in Table 1 and FIGS. 10 to 13. That is, the temperature of each semiconductor element (diodes 106-108) is as shown in Table 1. Regarding the temperature distribution of the portion excluding the sealing resin, Conventional Example 1 is shown in FIG. 10, Conventional Example 2 is shown in FIG. Example 1 was as shown in FIG. 12, and Example 2 of the present invention was as shown in FIG.

以上の結果からわかるように、従来例１に対し本発明例１では約４４％の温度低減、本発明例２では約３０％の温度低減が達成される。また、本発明例１，２はアルミ放熱板が適用されていないが、同じくアルミ放熱板が適用されていない従来例１と、アルミ放熱板が適用された従来例２のそれぞれと比較すると、アルミ放熱板が適用された従来例２と同程度の温度低減が達成される。
したがって、本発明の蛇腹部を有するリードフレームを適用することにより、アルミ放熱板を適用せずとも、従来例１とほぼ同サイズで、アルミ放熱板が適用された従来例２と同程度の放熱性を獲得することができる。 As can be seen from the above results, a temperature reduction of about 44% is achieved in Example 1 of the present invention, and a temperature reduction of about 30% is achieved in Example 2 of the present invention compared to Conventional Example 1. Moreover, although the aluminum heat sink is not applied to the inventive examples 1 and 2, compared with the conventional example 1 in which the aluminum heat sink is similarly applied and the conventional example 2 in which the aluminum heat sink is applied, the aluminum heat sink is compared with aluminum. The same temperature reduction as that of the conventional example 2 to which the heat sink is applied is achieved.
Therefore, by applying the lead frame having the bellows portion of the present invention, the heat radiation is almost the same size as that of the conventional example 1 without using the aluminum heat radiating plate and the same level as the conventional example 2 in which the aluminum heat radiating plate is applied. You can gain sex.

本発明例１は、本発明例２に対しても良好な結果を得た。これは、上述したように構成材料のうち樹脂の熱伝導率が一番低いところ、本発明例２の封止樹脂４０５が蛇腹部の凸側に沿って凹凸状に形成されず平面状に形成されているのに対し、本発明例１の封止樹脂３０５が蛇腹部の凸側に沿って凹凸状に形成されていることに起因する。すなわち、本発明例２の封止樹脂が内部の凹凸に沿わない分その凹部で樹脂層が厚くなるのに対し、本発明例１の封止樹脂は内部の凹凸に沿う外表面を有しその凹部で樹脂層が本発明例２より薄くなり（図１；３０５ａ−３０５ｂ間、３０５ａ−３０５ｃ間参照）、樹脂外表面までの熱伝導の点で有利となったためである。   Inventive Example 1 also obtained good results compared to Inventive Example 2. This is because, as described above, the resin has the lowest thermal conductivity among the constituent materials, and the sealing resin 405 of Example 2 of the present invention is not formed unevenly along the convex side of the bellows part but formed in a planar shape. In contrast to this, the sealing resin 305 of Example 1 of the present invention is formed in a concavo-convex shape along the convex side of the bellows portion. That is, while the sealing resin of Invention Example 2 does not follow the internal irregularities, the resin layer becomes thicker in the recesses, whereas the sealing resin of Invention Example 1 has an outer surface along the internal irregularities. This is because the resin layer becomes thinner in the concave portion than in Example 2 of the present invention (see FIG. 1; between 305a and 305b and between 305a and 305c), which is advantageous in terms of heat conduction to the resin outer surface.

１００ 樹脂封止型半導体装置（従来）
１０１−１０４ リードフレーム
１０１ａ−１０４ａ 外部端子部
１０１ｂ−１０４ｂ 内部接続部
１０６，１０７，１０８ ダイオード
１０９，１１０，１１１ 内部リード
１２０ 金型
１２０ｃ 樹脂注入口
１２０ｄ エアベント
２００ 樹脂封止型半導体装置（従来）
２０５ 封止樹脂
２３０ アルミ放熱板
２３１ 絶縁層
３００ 樹脂封止型半導体装置（本発明第１実施形態）
３０１−３０４ リードフレーム
３０１ｂ−３０４ｂ 内部接続部
３０１ｃ−３０４ｃ 蛇腹部
３０１ｄ−３０４ｄ 蛇腹部
３０５ 封止樹脂
３０５ａ，３０５ｂ，３０５ｃ 凸状部
２０ 金型
３２０ｃ 樹脂注入口
３２０ｄ１，３２０ｄ２ エアベント
３２０ｅ，３２０ｆ 凸部
４００ 樹脂封止型半導体装置
４００ 樹脂封止型半導体装置（本発明第２実施形態）
４０１−４０４ リードフレーム
４０１ｂ−４０４ｂ 内部接続部
４０１ｃ１，４０１ｃ２−４０４ｃ１，４０４ｃ２ 蛇腹部
４０１ｄ１，４０１ｄ２−４０４ｄ１，４０４ｄ２ 蛇腹部
４０５ 封止樹脂
Ｓ 半田
Ｘ 配列方向 100 Resin-encapsulated semiconductor device (conventional)
101-104 Lead frame 101a-104a External terminal part 101b-104b Internal connection part 106, 107, 108 Diode 109, 110, 111 Internal lead 120 Mold 120c Resin inlet 120d Air vent 200 Resin-encapsulated semiconductor device (conventional)
205 Sealing resin 230 Aluminum heat sink 231 Insulating layer 300 Resin sealing semiconductor device (first embodiment of the present invention)
301-304 Lead frame 301b-304b Internal connection part 301c-304c Bellow part 301d-304d Bellow part 305 Sealing resin 305a, 305b, 305c Convex part 20 Mold 320c Resin injection port 320d1, 320d2 Air vent 320e, 320f Convex part 400 Resin encapsulated semiconductor device 400 Resin encapsulated semiconductor device (second embodiment of the present invention)
401-404 Lead frame 401b-404b Internal connection 401c1, 401c2-404c1, 404c2 Bellows 401d1, 401d2-404d1, 404d2 Bellows 405 Sealing resin S Solder X Arrangement direction

Claims (7)

複数の半導体素子と、複数のリードフレームと、複数の内部リードと、封止樹脂とを備え、
前記複数のリードフレームはそれぞれ、内部接続部及び外部端子部を有する板状に形成され、
前記内部接続部が略同一面上に面するように配置されるとともに所定の配列方向に並べられ、
前記半導体素子は、それぞれ異なる前記内部接続部に搭載されて機械的・電気的に接続し、
前記内部リードは、前記半導体素子とこれに隣接する前記内部接続部との間に架設されてこの両者を機械的・電気的に接続し、
前記複数の半導体素子の配列方向と、前記複数の内部リードの配列方向と、前記各内部リードの架設延在方向とが前記所定の配列方向とされ、
前記半導体素子、前記内部リード及び前記内部接続部が前記封止樹脂により覆われて封止され、前記外部端子部が前記封止樹脂から露出する樹脂封止型半導体装置において、
前記リードフレームは、前記封止樹脂により封止されたその一部が前記所定の配列方向に沿った軸回りで曲げられることで構成された蛇腹部を有し、該蛇腹部が前記内部接続部の前記半導体素子が搭載された側に凸であることを特徴とする樹脂封止型半導体装置。 A plurality of semiconductor elements, a plurality of lead frames, a plurality of internal leads, and a sealing resin,
Each of the plurality of lead frames is formed in a plate shape having an internal connection portion and an external terminal portion,
The internal connection portions are arranged so as to face substantially the same plane and are arranged in a predetermined arrangement direction,
The semiconductor elements are mounted on the different internal connection portions and mechanically and electrically connected,
The internal lead is constructed between the semiconductor element and the internal connection part adjacent to the semiconductor element, and mechanically and electrically connects both of them.
The arrangement direction of the plurality of semiconductor elements, the arrangement direction of the plurality of internal leads, and the extending direction of the internal leads are the predetermined arrangement direction,
In the resin-encapsulated semiconductor device in which the semiconductor element, the internal lead, and the internal connection portion are covered and sealed with the sealing resin, and the external terminal portion is exposed from the sealing resin.
The lead frame has a bellows part formed by bending a part of the lead frame sealed with the sealing resin around an axis along the predetermined arrangement direction, and the bellows part is the internal connection part. A resin-encapsulated semiconductor device characterized by being convex on the side on which the semiconductor element is mounted. 前記蛇腹部を前記リードフレームの縁から相対する縁までに亘って前記所定の配列方向に長く１本又は２本以上有し、１本の蛇腹部は、前記所定の配列方向に沿った４条の折り目により断面矩形状に形成された請求項１に記載の樹脂封止型半導体装置。   The bellows part has one or two or more long in the predetermined arrangement direction from the edge of the lead frame to the opposite edge, and one bellows part has four strips along the predetermined arrangement direction. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is formed in a rectangular cross section by a fold. 前記蛇腹部は、前記内部接続部と前記外部端子部との間の部分に形成されている請求項１又は請求項２に記載の樹脂封止型半導体装置。   The resin-encapsulated semiconductor device according to claim 1, wherein the bellows portion is formed in a portion between the internal connection portion and the external terminal portion. 前記蛇腹部は、前記内部接続部を介して前記外部端子部と相対する部分に形成されている請求項１から請求項３のうちいずれか一に記載の樹脂封止型半導体装置。   4. The resin-encapsulated semiconductor device according to claim 1, wherein the bellows portion is formed in a portion facing the external terminal portion via the internal connection portion. 5. 前記蛇腹部が凸に形成された側を覆う前記封止樹脂の外表面は、前記蛇腹部に沿って凹凸状に形成されている請求項１から請求項４のうちいずれか一に記載の樹脂封止型半導体装置。   The resin according to any one of claims 1 to 4, wherein an outer surface of the sealing resin covering a side on which the bellows portion is convex is formed in an uneven shape along the bellows portion. Sealed semiconductor device. 前記蛇腹部が凸に形成された側を覆う前記封止樹脂の外表面は、互いに隣接する複数の前記蛇腹部間の凹部に対応することなく平面状に形成されている請求項１から請求項４のうちいずれか一に記載の樹脂封止型半導体装置。   The outer surface of the sealing resin that covers the side on which the bellows portion is convexly formed is formed in a flat shape without corresponding to the concave portions between the plurality of bellows portions adjacent to each other. 4. The resin-encapsulated semiconductor device according to claim 1. 請求項１から請求項６のうちいずれか一に記載の樹脂封止型半導体装置を製造する方法であって、
前記のとおり接続された前記複数のリードフレーム、前記複数の半導体素子及び前記複数の内部リードを、前記封止樹脂を成型する金型内に収め、
前記半導体素子及び前記内部リードとの間に、前記蛇腹部が介在する位置に設けられた注入口から当該蛇腹部に向けて、前記封止樹脂を構成する樹脂を前記金型内に注入する樹脂成型工程を備える樹脂封止型半導体装置の製造方法。 A method for manufacturing the resin-encapsulated semiconductor device according to any one of claims 1 to 6,
The plurality of lead frames connected as described above, the plurality of semiconductor elements, and the plurality of internal leads are housed in a mold for molding the sealing resin,
Resin for injecting a resin constituting the sealing resin into the mold from an injection port provided at a position where the bellows part is interposed between the semiconductor element and the internal lead toward the bellows part A method for manufacturing a resin-encapsulated semiconductor device comprising a molding step.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432075A (en) * 1977-08-15 1979-03-09 Nec Corp Semiconductor device
JPH0357253A (en) * 1989-07-26 1991-03-12 Hitachi Ltd Semiconductor device
JP2001068622A (en) * 1999-08-25 2001-03-16 Nippon Inter Electronics Corp Composite semiconductor device and its manufacture
JP2003518733A (en) * 1999-11-01 2003-06-10 ゼネラル セミコンダクター，インク． Planar hybrid diode rectifier bridge

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432075A (en) * 1977-08-15 1979-03-09 Nec Corp Semiconductor device
JPH0357253A (en) * 1989-07-26 1991-03-12 Hitachi Ltd Semiconductor device
JP2001068622A (en) * 1999-08-25 2001-03-16 Nippon Inter Electronics Corp Composite semiconductor device and its manufacture
JP2003518733A (en) * 1999-11-01 2003-06-10 ゼネラル セミコンダクター，インク． Planar hybrid diode rectifier bridge

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