JP2012132865A - Physical quantity measuring device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To appropriately measure a physical quantity in treating an object in an atmosphere where a temperature changes.SOLUTION: A physical quantity measuring device 90 is provided on a surface of a glass substrate G. The physical quantity measuring device 90 comprises: a measuring circuit 91; a temperature sensor 92 whose resistance value is changed in accordance with temperature change of the glass substrate G; a first wiring 93 for connecting the measuring circuit 91 to the temperature sensor 92; a dummy sensor 94 having a prescribed resistance value, which is changed less in accordance with the temperature change of the glass substrate G than the resistance value of the temperature sensor 92; and a second wiring 95 for connecting the measuring circuit 91 to the dummy sensor 94. A ratio in change in a resistance value against the temperature change of the glass substrate G between the first wiring 93 and the second wiring 95 is constant.

Description

  The present invention relates to a physical quantity measuring device that is provided on the surface of an object to be processed and measures a physical quantity when the object to be processed is processed in an atmosphere where the temperature changes, and a physical quantity measuring method using the physical quantity measuring device.

  For example, in a photolithography process in a flat panel display manufacturing process, a resist coating process for forming a resist film on a glass substrate for a flat panel display, an exposure process for exposing a predetermined pattern on the resist film, and developing the exposed resist film Various processing such as development processing and heat treatment of the glass substrate are performed.

  The predetermined pattern of the resist film described above determines the pattern shape of the underlying film to be processed and needs to be formed with strict dimensions. For this reason, although it is necessary to perform each said process appropriately, it is necessary to manage | control strictly the temperature of a glass substrate, the pressure of a process atmosphere, etc. in heat processing, for example. Therefore, physical quantities such as temperature and pressure are measured.

  Such physical quantity is measured using, for example, a measuring device provided on a glass substrate. Specifically, as a measurement device, for example, a sensor whose resistance value changes according to a change in physical quantity, such as a thermistor, a measurement circuit that measures a physical quantity by measuring the resistance value, a sensor and a measurement circuit are connected Wiring or the like is provided on a glass substrate (Patent Document 1).

JP-A-6-163340

Here, in the photolithography processing of the glass substrate, for example, a predetermined processing is performed on the glass substrate being transported on a plurality of transport rollers. For example, when performing heat treatment on a glass substrate, as shown in FIG. 9, for example, glass substrates G on a plurality of transport rollers R are transported into a chamber 500 of a heat treatment apparatus, and the glass being transported in the chamber 500 is transported. A heat treatment is performed on the substrate G. At this time, the temperature of the atmosphere T ₁ in the chamber 500 is, for example, 130 ° C., and the temperature of the atmosphere T ₂ outside the chamber 500 is, for example, 23 ° C., which is room temperature.

  For example, in order to measure the temperature of the glass substrate G, a measuring device 510 is provided on the surface of the glass substrate G as described in Patent Document 1 described above. The measurement device 510 includes a sensor 511, a measurement circuit 512, and a wiring 513. The wiring 513 has, for example, two lines of wiring (not shown) connected to both ends of the sensor 511. Moreover, the wiring 513 is extended | stretched in the conveyance direction of the glass substrate G, for example.

  However, in such a case, the resistance value of the wiring 513 is superimposed on the resistance value of the sensor 511, and the temperature of the glass substrate G cannot be appropriately measured in the measurement circuit 512.

  It is also conceivable to estimate the resistance value of the wiring 513 and subtract the resistance value of the wiring 513 from the resistance value measured in the measurement circuit 512, and measure the resistance value of the sensor 511. It is difficult to estimate. For example, when the glass substrate G is transferred into the chamber 500, the tip end side of the glass substrate G is inside the chamber 500, but the tail end side of the glass substrate G is outside the chamber 500. Then, in the wiring 513, the temperatures of the tip end portion 513a, the center portion 513b, and the tail end portion 513c are different. For example, the tip portion 513a is heated to 130 ° C., the tail end portion 513c is 23 ° C., and the center portion 513b is at a temperature between 23 ° C. and 130 ° C., for example, 80 ° C. Then, as the glass substrate G is transported, the resistance value of the wiring 513 also changes because the ranges and temperatures of the front end portion 513a, the central portion 513b, and the tail end portion 513c change. For this reason, it is difficult to estimate the resistance value of the wiring 513. Then, even if the resistance value of the wiring 513 is subtracted from the resistance value measured in the measurement circuit 512, the resistance value of the sensor 511 cannot be measured appropriately. Therefore, it is impossible to avoid the superimposition of the resistance value of the wiring 513, and the temperature of the glass substrate G is measured on the higher temperature side than the actual temperature and cannot be appropriately measured.

  In addition, with the recent increase in size of the glass substrate G, the wiring 513 provided on the glass substrate G also becomes longer. Therefore, it is more difficult to avoid such overlapping of the resistance values of the wiring 513. Yes.

  Further, for example, the sensor 511 and the measurement circuit 512 may be connected by a meandering wire 514 that does not extend linearly. The wiring 514 has, for example, two lines of wiring (not shown) connected to both ends of the sensor 511. In such a case, even if the wiring 514 has the same wiring length as the wiring 513, the temperature environment in which the wiring 514 and the wiring 513 are arranged is different, and thus the resistance value of the wiring 514 and the resistance value of the wiring 513 are different. For this reason, it is difficult to estimate the resistance value of the wiring 514, and it is difficult to avoid overlapping of the resistance values of the wiring 514. Therefore, the temperature of the glass substrate G cannot be measured appropriately.

  Note that, in order to suppress such superposition of resistance values of the wirings 513 and 514, it is also conceivable that the wirings 513 and 514 are each made of four wires. That is, in order to measure the resistance value of the sensor 511, a voltage measurement unit having a resistance value much higher than that of the sensor 511 is connected to the sensor 511. Then, a constant current is passed through the sensor 511, and the voltage measurement unit measures the resistance value of the sensor 511. However, in such a case, the configuration of the measurement circuit 512 on the glass substrate G is complicated, and control such as switching of switches in the measurement circuit 512 is complicated. Further, under a high temperature environment, the resistance value at the voltage measurement unit decreases, and thus the resistance value of the sensor 511 cannot be measured appropriately.

  This invention is made | formed in view of this point, and it aims at measuring appropriately the physical quantity at the time of processing a to-be-processed object in the atmosphere where temperature changes.

  In order to achieve the above object, the present invention is a physical quantity measuring device that is provided on the surface of an object to be processed and measures a physical quantity when processing the object to be processed in an atmosphere in which the temperature changes. A physical quantity sensor whose resistance value changes in response to a change, and a dummy sensor having a predetermined resistance value, and a change amount of the resistance value with respect to the change of the physical quantity is smaller than a change amount of the resistance value of the physical quantity sensor And a first wiring for connecting the physical quantity sensor and the measurement circuit, and a second wiring for connecting the dummy sensor and the measurement circuit, and the first wiring with respect to a temperature change of the object to be processed. The ratio between the amount of change in the resistance value of the second wiring and the amount of change in the resistance value of the second wiring is constant.

  According to the present invention, the measurement circuit measures the first resistance value including the resistance value of the physical quantity sensor and the resistance value of the first wiring. In the measurement circuit, the second resistance value including the resistance value of the dummy sensor and the resistance value of the second wiring is measured. Then, the resistance value of the second wiring is calculated by subtracting the resistance value of the dummy sensor from the second resistance value. At this time, since the dummy sensor has a predetermined resistance value, and the change amount of the resistance value with respect to the temperature change of the physical quantity is smaller than the change amount of the resistance value of the physical quantity sensor, the resistance value of the second wiring is set. Can be calculated appropriately. Since the ratio between the change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to the temperature change of the object to be processed is constant, the calculated resistance of the second wiring is calculated as described above. Based on the value, the resistance value of the first wiring can be calculated. Then, the resistance value of the physical quantity sensor is calculated by subtracting the calculated resistance value of the first wiring from the first resistance value measured in the measurement circuit. Then, the physical quantity can be appropriately measured based on the resistance value of the physical quantity sensor.

  The change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to the temperature change of the object to be processed may be the same. In this case, the cross-sectional area of the first wiring and the cross-sectional area of the second wiring may be the same, and the first wiring and the second wiring may be arranged in parallel. In the present invention, the ratio of the change amount of the resistance value of the first wiring and the second wiring is “same”, in addition to the ratio of the same value, a slightly different ratio within the error range. included. Similarly, the “same” cross-sectional area of the first wiring and the second wiring includes a cross-sectional area that is slightly different but within an error range in addition to the completely same cross-sectional area.

  The first wiring and the second wiring extend at least in a transport direction in which heat treatment is performed while the object to be processed is transported, and the first wiring and the second wiring are in the process of transporting the object to be processed. May be arranged under the same temperature environment.

  The heat treatment may be a heat treatment in a photolithography process.

  The object to be processed may be a flat panel display substrate.

  The physical quantity may be a temperature of an object to be processed, and the physical quantity sensor may be a temperature sensor.

  Another aspect of the present invention is a physical quantity measuring device that is provided on the surface of an object to be processed and measures a physical quantity when processing the object to be processed in an atmosphere whose temperature changes in the direction of conveyance of the object to be processed. A physical quantity sensor whose resistance value changes in accordance with a change in the physical quantity, and a predetermined resistance value, and a change amount of the resistance value with respect to the change in the physical quantity is a change in the resistance value of the physical quantity sensor. A dummy sensor that is smaller than the quantity, a first wiring that connects the physical quantity sensor and the measurement circuit, and a second wiring that connects the dummy sensor and the measurement circuit. The material of the wiring and the material of the second wiring are the same, the length of the first wiring and the length of the second wiring are the same, the cross-sectional area of the first wiring and the second wiring The cross-sectional area of the wiring is the same, and the first wiring and the front The second wiring is characterized in that it extends at least in the conveyance direction of the object to be processed and is arranged in parallel.

  Another aspect of the present invention is a physical quantity measurement method for measuring a physical quantity when processing an object to be processed in an atmosphere where the temperature changes, using a physical quantity measuring device provided on the surface of the object to be processed. The physical quantity measuring device includes a physical quantity sensor whose resistance value changes in accordance with a change in the physical quantity, a predetermined resistance value, and a change amount of the resistance value with respect to the change in the physical quantity is a resistance of the physical quantity sensor. A dummy sensor that is smaller than the amount of change in value, a first wiring that connects the physical quantity sensor and the measurement circuit, and a second wiring that connects the dummy sensor and the measurement circuit. The ratio between the change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to the temperature change of the processing body is constant, and the physical quantity measuring method includes the first wiring Each of the second wirings In the measurement circuit, the first resistance value including the resistance value of the physical quantity sensor and the resistance value of the first wiring is measured in the measurement circuit, and the resistance value of the dummy sensor is measured in the measurement circuit. Measuring a second resistance value including a resistance value of the second wiring, subtracting a resistance value of the dummy sensor from the second resistance value, and calculating a resistance value of the second wiring; Based on the resistance value of the second wiring, the resistance value of the first wiring is calculated, and the resistance value of the physical quantity sensor is calculated by subtracting the resistance value of the first wiring from the first resistance value. The physical quantity is measured based on a resistance value of the physical quantity sensor.

  The change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to the temperature change of the object to be processed may be the same. In this case, the cross-sectional area of the first wiring and the cross-sectional area of the second wiring may be the same, and the first wiring and the second wiring may be arranged in parallel.

  A heat treatment is performed while conveying the object to be processed, the temperature of the atmosphere changes in the direction of conveyance of the object to be processed, and the first wiring and the second wiring extend at least in the direction of conveyance of the object to be processed, During the transfer of the object to be processed, the first wiring and the second wiring may be in the same temperature environment.

  The heat treatment may be a heat treatment in a photolithography process.

  The object to be processed may be a flat panel display substrate.

  The physical quantity may be a temperature of an object to be processed, and the physical quantity sensor may be a temperature sensor.

  ADVANTAGE OF THE INVENTION According to this invention, the physical quantity at the time of processing a to-be-processed object in the atmosphere where temperature changes can be measured appropriately.

It is a top view which shows the outline of a structure of the coating-development processing system which processes the glass substrate provided with the physical quantity measuring device concerning this Embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of a heat processing apparatus. It is a cross-sectional view which shows the outline of a structure of a heat processing apparatus and a physical quantity measuring device. It is the flowchart which showed each process in the method of measuring the temperature of a glass substrate. It is a top view which shows the outline of a structure of the physical quantity measuring device concerning other embodiment. It is a top view which shows the outline of a structure of the physical quantity measuring device concerning other embodiment. (A) is the graph which measured the temperature of the glass substrate in a present Example, (b) is the graph which expanded a part of Fig.7 (a). (A) is the graph which measured the temperature of the glass substrate in a comparative example, (b) is the graph which expanded a part of Fig.8 (a). It is a cross-sectional view which shows the outline of a structure of the conventional heat processing apparatus and a measuring device.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing treatment system 1 for processing a glass substrate as an object to be processed provided with a physical quantity measuring device according to the present embodiment. In the present embodiment, a case where the physical quantity measuring device measures the temperature of the glass substrate G as a physical quantity will be described. Further, the glass substrate G is a substrate for a flat panel display, and has, for example, a square shape of 3000 mm × 3000 mm in plan view.

  As shown in FIG. 1, the coating and developing processing system 1 includes, for example, a cassette station 2 for loading and unloading a plurality of glass substrates G to / from the outside in units of cassettes, and a predetermined processing in a single wafer type in a photolithography process. The processing station 3 in which various processing apparatuses for performing the processing are arranged, and the interface station 5 provided adjacent to the processing station 3 and delivering the glass substrate G between the processing station 3 and the exposure apparatus 4 are integrated. It has a connected configuration.

  The cassette station 2 is provided with a cassette mounting table 10 that can mount a plurality of cassettes C in a line in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a substrate transfer body 12 that can move in the X direction on the transfer path 11. The substrate carrier 12 is also movable in the arrangement direction (Z direction; vertical direction) of the glass substrates G accommodated in the cassette C, and is selected with respect to the glass substrates G in each cassette C arranged in the X direction. Accessible.

  The substrate transport body 12 can rotate in the θ direction around the Z axis, and can also access an excimer UV irradiation device 20 and a cooling processing device 33 on the processing station 3 side described later.

  The processing station 3 includes, for example, two rows of transfer lines A and B extending in the Y direction (left and right direction in FIG. 1). The transfer line A is arranged on the front side of the processing station 3 (X direction negative direction side (lower side in FIG. 1)), and the transfer line B is on the back side of the processing station 3 (X direction positive direction side (upper side in FIG. 1). )).

  In the transport line A, transport rollers R are arranged side by side in the direction along the transport line A as shown in FIGS. Each conveyance roller R is configured to be rotatable about a central axis extending in a direction perpendicular to the direction along the conveyance line A as a rotation axis. In addition, among the plurality of transport rollers R, at least one transport roller R is provided with a drive mechanism (not shown) including, for example, a motor. And the glass substrate G can be linearly conveyed in the horizontal direction by these conveyance rollers R. 2 and 3 illustrate the periphery of the heat treatment apparatus 22 described later, the plurality of transport rollers R described above are disposed between the apparatuses 20 to 28 illustrated in FIG. Also in the transport line B, a plurality of transport rollers R having the above-described configuration are arranged.

  In the transfer line A, as shown in FIG. 1, for example, an excimer UV irradiation device 20 that removes organic substances on the glass substrate G and a scrubber cleaning that cleans the glass substrate G in order from the cassette station 2 side to the interface station 5 side. Apparatus 21, heat treatment apparatus 22 as a heat treatment apparatus for heat treating glass substrate G, cooling treatment apparatus 23 for cooling glass substrate G, resist coating treatment apparatus 24 for applying a resist solution to glass substrate G, and glass substrate G A vacuum drying device 25 for drying under reduced pressure, a heat treatment device 26, a cooling processing device 27, and an outstage 28 for temporarily waiting for the glass substrate G are arranged in a straight line.

  In the transport line B, in order from the interface station 5 side to the cassette station 2 side, for example, a development processing device 30 that develops the glass substrate G, an i-line UV irradiation device 31 that performs decoloring processing of the glass substrate G, and heat treatment The device 32 and the cooling processing device 33 are arranged in a straight line.

  Between the outstage 28 of the transport line A and the development processing apparatus 30 of the transport line B, a transport body 40 that transports the glass substrate G during this period is provided. The transport body 40 can transport the glass substrate G to an extension cooling device 60 of the interface station 5 described later.

  The interface station 5 is provided with, for example, an extension cooling device 60 that has a cooling function and delivers the glass substrate G, a buffer cassette 61 that temporarily stores the glass substrate G, and an external device block 62. The external device block 62 is provided with a titler that exposes a production management code to the glass substrate G and a peripheral exposure device that exposes the peripheral portion of the glass substrate G. The interface station 5 is provided with a substrate transfer body 63 that can transfer the glass substrate G to the extension cooling device 60, the buffer cassette 61, the external device block 62, and the exposure device 4.

  Next, the structure of the heat processing apparatus 22, 26, 32 mentioned above is demonstrated. The heat treatment apparatus 22 has a chamber 70 as shown in FIGS. The chamber 70 is provided so as to cover a part of the transport rollers R among the transport rollers R provided along the transport line A. A carry-in port 71 for the glass substrate G is formed on the side surface on the upstream side of the chamber 70, and a carry-out port 72 for the glass substrate G is formed on the side surface on the downstream side of the chamber 70. Each of the carry-in entrance 71 and the carry-out exit 72 is provided with an open / close shutter (not shown).

  A hot plate 80 is disposed inside the chamber 70 and above the conveyance roller R. Inside the hot plate 80, for example, a heater 81 that generates heat by power feeding is provided, and the hot plate 80 can be adjusted to a predetermined set temperature. Further, the hot plate 80 extends in the width direction of the glass substrate G, and can heat the glass substrate G being conveyed on the conveying roller R from the front side. Note that an exhaust pipe (not shown) for exhausting the internal atmosphere is connected to the heat treatment apparatus 22. In the illustrated example, the hot plate 80 heats the glass substrate G from the front surface side, but the glass substrate G may be heated from the back surface side. That is, the hot plate may be disposed at the same height as the transport roller R or may be disposed below the transport roller R. Furthermore, the glass substrate G may be heated from both sides of the front surface and the back surface by arranging both of these hot plates.

The temperature of the atmosphere T ₁ in the chamber 70 is, for example, 130 ° C. by the hot plate 80. The temperature of the atmosphere T ₂ of the outer chamber 70 is for example, between 23 ° C.. And in the heat processing apparatus 22, heat processing is performed to the said glass substrate G, conveying the glass substrate G on the conveyance roller R. FIG. Therefore, when the glass substrate G is transported into the chamber 70, the temperature of the atmosphere around the glass substrate G changes in the transport direction of the glass substrate G.

  In addition, about the structure of the heat processing apparatuses 26 and 32, since it is the same as that of the heat processing apparatus 22 mentioned above, description is abbreviate | omitted.

  Next, a physical quantity measuring device that is provided on the surface of the glass substrate G and measures the temperature of the glass substrate G as a physical quantity will be described. As shown in FIG. 3, the physical quantity measuring device 90 includes a measuring circuit 91 including, for example, a processor, a memory, an amplifier, a switch, and the like. Note that data such as a resistance value measured by the measurement circuit 91 may be stored in a memory in the measurement circuit 91, or may be output from the measurement circuit 91 to an external computer or the like, for example, wirelessly.

  The physical quantity measuring device 90 includes a temperature sensor 92 as a physical quantity sensor whose resistance value changes according to a change in the temperature of the glass substrate G. For the temperature sensor 92, for example, a resistance temperature detector (RTD) or a thermistor is used. In addition, the temperature coefficient of resistance (TCR) of the temperature sensor 92 is 3850 ppm, for example, and the resistance value of the temperature sensor 92 at 130 ° C. is 1500Ω, for example. A plurality of temperature sensors 92 are arranged at the temperature measurement points of the glass substrate G. The measurement circuit 91 and the temperature sensor 92 are connected by a first wiring 93. The first wiring 93 has, for example, two wires (not shown) connected to both ends of the temperature sensor 92. Moreover, the 1st wiring 93 is extended | stretched linearly in the conveyance direction (direction along the conveyance line A) of the glass substrate G, for example. Further, for example, a copper wire is used for the first wiring 93. In such a case, the TCR of the first wiring 93 is, for example, 4330 ppm.

  A dummy sensor 94 is provided in the vicinity of the temperature sensor 92. For the dummy sensor 94, for example, a precision resistor is used. The dummy sensor 94 has a predetermined resistance value, for example, 1000Ω. The dummy sensor 94 has a smaller change amount of the resistance value with respect to the temperature change of the glass substrate G than the change amount of the resistance value of the temperature sensor 92. More preferably, the dummy sensor 94 is a resistor whose resistance value with respect to the temperature change of the glass substrate G hardly changes, that is, a TCR of 0 ppm or extremely small. The measurement circuit 91 and the dummy sensor 94 are connected by a second wiring 95. The second wiring 95 has, for example, two wires (not shown) connected to both ends of the dummy sensor 94, respectively. Moreover, the 2nd wiring 95 is extended | stretched linearly in the conveyance direction (direction along the conveyance line A) of the glass substrate G, for example. Further, for example, a copper wire is used for the second wiring 95. In such a case, the TCR of the second wiring 95 is, for example, 4330 ppm. The predetermined resistance value in the dummy sensor 94 is not limited to the form of the present embodiment, and can take various values of 0Ω or more.

As described above, the first wiring 93 and the second wiring 95 are arranged in parallel and have the same length. The cross-sectional area of the first wiring 93 and the cross-sectional area of the second wiring 95 are also the same. Further, the material of the first wiring 93 and the material of the second wiring 95 are the same. Moreover, the first wiring 93 and the second wiring 95 are arranged in the same temperature environment in the transport direction of the glass substrate G. Therefore, with respect to the temperature change of the glass substrate G, the change amount and the first wiring resistance R _W1 of the first wiring 93, the same and the variation of the second wiring resistance R _W2 of the second wiring 95 is there. That is, regardless of the temperature change of the glass substrate G, the first wiring resistance value _RW1 and the second wiring resistance value _RW2 are the same. Note that the “same” of the first wiring resistance value R _W1 and the second wiring resistance value R _W2 includes a resistance value within the error range, although it is slightly different, in addition to the resistance value of the same value. included.

  The coating and developing treatment system 1 is provided with a control unit 100 as shown in FIG. The control unit 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for executing substrate processing in the coating and developing treatment system 1. The program storage unit also stores a program that executes physical quantity measurement in the physical quantity measuring device 90. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 100 from the storage medium H.

  Next, the substrate processing of the glass substrate G performed using the coating and developing processing system 1 configured as described above will be described.

  First, the plurality of glass substrates G in the cassette C of the cassette station 2 are sequentially transferred to the excimer UV irradiation apparatus 20 of the processing station 3 by the substrate transfer body 12. The glass substrate G is conveyed along the linear conveyance line A, and the excimer UV irradiation device 20, the scrubber cleaning device 21, the heat treatment device 22, the cooling treatment device 23, the resist coating treatment device 24, the reduced pressure drying device 25, and the heating. It is sequentially conveyed to the processing device 26 and the cooling processing device 27, and predetermined processing is performed in each processing device. After completion of the cooling process, the glass substrate G is transferred to the outstage 28. Thereafter, the glass substrate G is transported to the interface station 5 by the transport body 40 and is transported to the exposure apparatus 4 by the substrate transport body 63.

  The glass substrate G that has been subjected to the exposure processing in the exposure apparatus 4 is returned to the interface station 5 by the substrate transport body 63 and is transported to the development processing apparatus 30 of the processing station 3 by the transport body 40. The glass substrate G is transported along a linear transport line B and is transported in order to the development processing device 30, the i-line UV irradiation device 31, the heat processing device 32, and the cooling processing device 33, and a predetermined process is performed in each processing device. Is given. The glass substrate G that has been subjected to the cooling process in the cooling processing apparatus 33 is returned to the cassette C of the cassette station 2 by the substrate transfer body 12, and a series of photolithography steps is completed.

  Next, a method for measuring the temperature of the glass substrate G using the physical quantity measuring device 90 when the glass substrate G is heat-treated in the heat treatment apparatuses 22, 26, and 32 described above will be described. FIG. 4 is a flowchart showing the main steps in the method for measuring the temperature of the glass substrate G. In this embodiment, for example, as shown in FIG. 3, the case where the tip end side of the glass substrate G is in the chamber 70 but the tail end side of the glass substrate G is outside the chamber 70 will be described. In such a case, the temperature of the atmosphere changes in the transport direction of the glass substrate G, and the temperature of the glass substrate G also changes in the transport direction.

First, in the measurement circuit 91 to measure a first resistance value R1 and a first wiring resistance _{R W1} in the resistance value _{R T} of the first wiring 93 of the temperature sensor 92 (step S1 in FIG. 4). That is, the first resistance value R1 is expressed by the following formula (1). In the measurement circuit, the second resistance value R2 including the resistance value _RD of the dummy sensor 94 and the second wiring resistance value _RW2 of the second wiring 95 is measured (step S2 in FIG. 4). That is, the second resistance value R2 is expressed by the following formula (2).
R1 = R _T + R _W1 (1)
R2 = R _D + R _W2 (2)

Here, the resistance value _RD of the dummy sensor 94 is a predetermined resistance value, has a small TCR, and the resistance value with respect to the temperature change of the glass substrate G hardly changes. Therefore, when the resistance value _RD of the dummy sensor 94 is subtracted from the second resistance value R2 based on the above (2), the second wiring resistance value _RW2 is appropriately calculated regardless of the temperature change of the glass substrate G. (Step S3 in FIG. 4).

Since the first wiring resistance value R _W1 and the second wiring resistance value R _W2 are the same value regardless of the temperature change of the glass substrate G, the calculated second wiring resistance value R _W2 is described above. From this, the first wiring resistance value _RW1 can be calculated (step S4 in FIG. 4). And based on said Formula (1), 1st wiring resistance value _RW1 is subtracted from 1st resistance value R1, and resistance value _RT of the temperature sensor 92 is calculated (process S5 of FIG. 4). And based on resistance value _RT of this temperature sensor, the temperature of the glass substrate G can be measured appropriately (process S6 of FIG. 4).

As described above, according to the present embodiment, by using the dummy sensor 94 and the second wiring 95, it is possible to avoid the superimposition of the first wiring resistance value _{RW1 on} the resistance value _RT of the temperature sensor 92. it can. In particular the glass substrate G is large, even when the change amount of the first wiring resistance value R _W1 accompanying the conveyance of the glass substrate G is large, it is possible to avoid the superposition of the first wiring resistance R _W1 it can. Therefore, the resistance value _RT of the temperature sensor 92 can be appropriately measured, and the temperature of the glass substrate G can be appropriately measured.

The dummy sensor 94 is preferably as the TCR is small. However, if at least the change amount of the resistance value _RD with respect to the temperature change of the glass substrate G is smaller than the change amount of the resistance value _RT of the temperature sensor 92, the dummy sensor 94 is The wiring resistance value _RW2 of ₂ can be calculated more appropriately than in the past.

In the above embodiment, the dummy sensor 94 is provided for each temperature sensor 92. However, for example, when the shape and arrangement of the plurality of first wirings 93 are the same, one dummy sensor is provided for each of the plurality of temperature sensors 92. 94 may be provided. In such a case, since the first wiring resistance value R _W1 in each first wiring 93 is the same, in step S4, the plurality of first wiring resistance values R _W2 in one second wiring 95 are determined from the plurality of first wiring resistance values R _W1 . The wiring resistance value _RW1 can be calculated. In step S5, the resistance value _RT of the temperature sensor 92 can be appropriately calculated, and the first wiring resistance value _RW1 can be avoided from being superimposed on the resistance value _RT of the temperature sensor 92.

Further, in the above embodiment, the first wiring 93 and the second wiring 95 extend linearly along the conveyance direction of the glass substrate G, respectively, and the first wiring resistance against the temperature change of the glass substrate G. Although the value R _W1 and the second wiring resistance value R _W2 are the same value, the configuration in which the wiring resistance values R _W1 and R _W2 are the same is not limited to the present embodiment.

For example, as shown in FIG. 5, the first wiring 93 and the second wiring 95 may meander and be arranged in parallel. Even in such a case, the first wiring resistance value R _W1 and the second wiring resistance value R _W2 with respect to the temperature change of the glass substrate G can be made the same value, and the first wiring with respect to the resistance value R _T of the temperature sensor 92 can be obtained. The superposition of the resistance value R _W1 can be avoided.

Further, for example, as shown in FIG. 6, the first wiring 93 and the second wiring 95 may meander and be arranged in line symmetry. Even in such a case, the first wiring resistance value R _W1 and the second wiring resistance value R _W2 with respect to the temperature change of the glass substrate G can be made the same value, and the first wiring with respect to the resistance value R _T of the temperature sensor 92 can be obtained. The superposition of the resistance value R _W1 can be avoided.

In the above embodiment, the first wiring resistance value R _W1 and the second wiring resistance value R _W2 with respect to the temperature change of the glass substrate G are the same value, but the first wiring resistance value R _W1. It is only necessary that the ratio between the amount of change in the second wiring resistance value _RW2 is constant.

For example, when the cross-sectional area of the first wiring 93 is twice the cross-sectional area of the second wiring 95, the ratio of the change amount of the second wiring resistance value _{RW2 to} the change amount of the first wiring resistance value _RW1 is It becomes constant at 1/2. In such a case, the second wiring resistance R _W2 is calculated in step S3, the first wiring resistance R _W1 on the basis of the ratio in step S4 is calculated. Therefore, the superimposition of the first wiring resistance value _{RW1 on} the resistance value _RT of the temperature sensor 92 can be avoided.

Also for example, when the wiring length of the first wire 93 is twice the wire length of the second wiring 95, second ratio variation of the wiring resistance R _W2 with respect to the change amount of the first wiring resistance R _W1 Becomes constant at 1/2. Even in such a case, the superimposition of the first wiring resistance value R _W1 on the resistance value R _T of the temperature sensor 92 can be avoided as described above.

  In the above embodiment, the temperature of the glass substrate G is formed as a physical quantity in the physical quantity measuring device 90, but the physical quantity measuring device 90 can also measure other physical quantities. That is, instead of using the temperature sensor 92 as the physical quantity sensor, another physical quantity sensor may be used.

  For example, when a thermal flow meter is used as the physical quantity sensor, the physical quantity measuring device 90 can measure the gas flow rate and flow velocity of the processing atmosphere. Moreover, when a thermal pressure gauge or a resistance pressure gauge is used as the physical quantity sensor, the pressure of the processing atmosphere can be measured. Further, when a resistance strain meter is used as the physical quantity sensor, the strain of the glass substrate G can be measured. Further, when a resistance type accelerometer is used as the physical quantity sensor, it is possible to measure the shaking of the glass substrate G that is being transported on the transport roller R.

In the case where the physical quantity sensor whose resistance value changes in accordance with the change in the physical quantity as described above, when the dummy sensor 94 and the second wiring 95 are used as in the present invention, the first resistance value relative to the resistance value of the physical quantity sensor is used. The wiring resistance value _RW1 can be avoided. Therefore, the resistance value of the physical quantity sensor can be appropriately measured, and the physical quantity can be appropriately measured.

In the above embodiment, the case where the glass substrate G is used as the object to be processed has been described. However, the present invention can also be applied to objects to be processed other than the glass substrate G. For example, the present invention can be applied to other objects to be processed such as a semiconductor wafer and a mask reticle for a photomask. In particular, the size of semiconductor wafers has increased in recent years, and the wiring length of the first wirings 93 provided on the semiconductor wafer has also become longer. For this reason, it has become more difficult to avoid the superimposition of the first wiring resistance value _RW1 . Therefore, it is useful to apply the present invention to such a large semiconductor wafer. Furthermore, the present invention can also be applied to objects to be processed other than such product substrates, such as dummy substrates.

  Moreover, although the above embodiment demonstrated the case where the photolithographic process was performed to the glass substrate G in the application | coating development processing system 1, this invention is applicable also when performing another process. For example, the present invention can also be applied when processing a printed circuit board in a solder flow furnace.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

  Hereinafter, when the physical quantity measuring device of the present invention is used, the effect of appropriately measuring the physical quantity will be described with reference to a comparative example. In this example and the comparative example, the glass substrate G is transported to the heat treatment apparatus 22 shown in FIG. 2 and the temperature of the glass substrate G is measured. The temperature in the chamber 70 of the heat treatment apparatus 22 is set to 130 ° C. Moreover, the glass substrate G of the object to be processed has a quadrangular shape with a size of 3000 mm × 3000 mm in plan view. The glass substrate G not only changes its size according to the number of liquid crystal panels to be manufactured at the same time, but also has a rectangular shape.

  In this embodiment, the physical quantity measuring device 90 shown in FIG. 3 is used. An RTD was used as the temperature sensor 92, and 16 temperature sensors 92 were arranged on the glass substrate G. The dummy sensor 94 is a precision resistor having a TCR of 5 ppm and is disposed adjacent to each temperature sensor 92. As the first wiring 93 and the second wiring 95, a PTFE-coated copper wire having a diameter of 0.4 mm was used. The first wiring 93 and the second wiring are arranged in parallel.

  Then, when all the temperature sensors 92 entered the chamber 70, the above-described steps S1 to S6 were performed, and the temperature in each temperature sensor 92 was measured. The result is shown in FIG.

  In FIG. 7A, the horizontal axis indicates time, and the vertical axis indicates the temperature in each temperature sensor 92. FIG. 7B is an enlarged view of a part of FIG. Referring to FIG. 7, the temperature of all the temperature sensors 92 was in the range of 129.95 ° C. to 130.05 ° C., and the difference from the actual temperature of 130 ° C. of the glass substrate G was ± 0.05 ° C. . Therefore, in this example, the temperature of the glass substrate G could be appropriately measured.

  On the other hand, in the comparative example, the measuring device 510 shown in FIG. 9 was used. An RTD was used as the sensor 511, and 16 sensors 511 were arranged on the glass substrate G. As the wiring 513, a PTFE-coated copper wire having a diameter of 0.4 mm was used.

  And when all the sensors 511 entered the chamber 500, the temperature in each sensor 511 was measured. The result is shown in FIG.

  In FIG. 8A, the horizontal axis indicates time, and the vertical axis indicates the temperature in each sensor 511. FIG. 8B is an enlarged view of a part of FIG. Referring to FIG. 8, the temperature of all the sensors 511 was within a range of 130 ° C. to 137 ° C., and the difference from the actual temperature of 130 ° C. of the glass substrate G was 7 ° C. Therefore, according to this comparative example, the temperature of the glass substrate G could not be measured appropriately. This is presumably because the resistance value of the wiring 513 is superimposed on the resistance value of the sensor 511 as described above.

From the above, according to the present invention, it was found that the resistance value _RW1 of the first wiring 93 can be avoided from being superimposed on the resistance value _RT of the temperature sensor 92, and the temperature of the glass substrate G can be measured appropriately.

DESCRIPTION OF SYMBOLS 1 Coating / development processing system 22, 26, 32 Heat processing apparatus 70 Chamber 90 Physical quantity measuring apparatus 91 Measuring circuit 92 Temperature sensor 93 1st wiring 94 Dummy sensor 95 2nd wiring 100 Control part A, B Conveyance line G Glass substrate R Conveyor roller T ₁ Atmosphere inside the chamber T ₂ Outside atmosphere

Claims (15)

A physical quantity measuring device that is provided on the surface of the object to be processed and measures a physical quantity when the object to be processed is processed in an atmosphere where the temperature changes.
A physical quantity sensor whose resistance value changes in accordance with a change in the physical quantity;
A dummy sensor having a predetermined resistance value, and a change amount of the resistance value with respect to the change of the physical quantity is smaller than a change amount of the resistance value of the physical quantity sensor;
A first wiring connecting the physical quantity sensor and the measurement circuit;
A second wiring for connecting the dummy sensor and the measurement circuit;
A physical quantity measuring apparatus, wherein a ratio of a change amount of a resistance value of the first wiring and a change amount of a resistance value of the second wiring with respect to a temperature change of an object to be processed is constant. 2. The physical quantity measurement according to claim 1, wherein the change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to a temperature change of the object to be processed are the same. apparatus. The cross-sectional area of the first wiring and the cross-sectional area of the second wiring are the same,
The physical quantity measuring apparatus according to claim 2, wherein the first wiring and the second wiring are arranged in parallel. The first wiring and the second wiring extend at least in a transport direction in which heat treatment is performed while a target object is transported,
4. The physical quantity measurement according to claim 1, wherein the first wiring and the second wiring are arranged in the same temperature environment during conveyance of the object to be processed. 5. apparatus. The physical quantity measuring apparatus according to claim 4, wherein the heat treatment is a heat treatment in a photolithography process. The physical quantity measuring device according to claim 1, wherein the object to be processed is a flat panel display substrate. The physical quantity is the temperature of the object to be processed,
The physical quantity measuring device according to claim 1, wherein the physical quantity sensor is a temperature sensor. A physical quantity measuring device that is provided on the surface of the object to be processed and measures a physical quantity at the time of processing the object to be processed while being conveyed in an atmosphere in which the temperature changes in the direction of conveyance of the object to be processed,
A physical quantity sensor whose resistance value changes in accordance with a change in the physical quantity;
A dummy sensor having a predetermined resistance value, and a change amount of the resistance value with respect to the change of the physical quantity is smaller than a change amount of the resistance value of the physical quantity sensor;
A first wiring connecting the physical quantity sensor and the measurement circuit;
A second wiring for connecting the dummy sensor and the measurement circuit;
The material of the first wiring and the material of the second wiring are the same,
The length of the first wiring and the length of the second wiring are the same,
The cross-sectional area of the first wiring and the cross-sectional area of the second wiring are the same,
The physical quantity measuring device, wherein the first wiring and the second wiring extend at least in a conveyance direction of the object to be processed and are arranged in parallel. A physical quantity measuring method for measuring a physical quantity when processing an object to be processed in an atmosphere where the temperature changes using a physical quantity measuring device provided on the surface of the object to be processed,
The physical quantity measuring device is:
A physical quantity sensor whose resistance value changes in accordance with a change in the physical quantity;
A dummy sensor having a predetermined resistance value, and a change amount of the resistance value with respect to the change of the physical quantity is smaller than a change amount of the resistance value of the physical quantity sensor;
A first wiring connecting the physical quantity sensor and the measurement circuit;
A second wiring for connecting the dummy sensor and the measurement circuit;
The ratio between the change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to the temperature change of the object to be processed is constant,
The physical quantity measuring method is:
Placing the first wiring and the second wiring in the atmosphere,
In the measurement circuit, a first resistance value including a resistance value of the physical quantity sensor and a resistance value of the first wiring is measured,
In the measurement circuit, a second resistance value including a resistance value of the dummy sensor and a resistance value of the second wiring is measured,
Subtracting the resistance value of the dummy sensor from the second resistance value to calculate the resistance value of the second wiring;
Based on the resistance value of the second wiring, the resistance value of the first wiring is calculated,
The resistance value of the physical quantity sensor is calculated by subtracting the resistance value of the first wiring from the first resistance value,
The physical quantity measuring method, wherein the physical quantity is measured based on a resistance value of the physical quantity sensor. The physical quantity measurement according to claim 9, wherein the change amount of the resistance value of the first wiring and the change amount of the resistance value of the second wiring with respect to a temperature change of the object to be processed are the same. Method. The cross-sectional area of the first wiring and the cross-sectional area of the second wiring are the same,
The physical quantity measuring method according to claim 10, wherein the first wiring and the second wiring are arranged in parallel. Perform heat treatment while conveying the workpiece,
The temperature of the atmosphere changes in the conveyance direction of the object to be processed, and the first wiring and the second wiring extend at least in the conveyance direction of the object to be processed,
The physical quantity measuring method according to claim 9, wherein the first wiring and the second wiring are each in the same temperature environment during conveyance of the object to be processed. The physical quantity measurement method according to claim 12, wherein the heat treatment is a heat treatment in a photolithography process. The physical quantity measuring method according to claim 9, wherein the object to be processed is a flat panel display substrate. The physical quantity is the temperature of the object to be processed,
The physical quantity measuring method according to claim 9, wherein the physical quantity sensor is a temperature sensor.

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