JP2012125788A - Laser processing method and laser processor - Google Patents

Laser processing method and laser processor Download PDF

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JP2012125788A
JP2012125788A JP2010278482A JP2010278482A JP2012125788A JP 2012125788 A JP2012125788 A JP 2012125788A JP 2010278482 A JP2010278482 A JP 2010278482A JP 2010278482 A JP2010278482 A JP 2010278482A JP 2012125788 A JP2012125788 A JP 2012125788A
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liquid
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thin film
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laser processing
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Kosuke Nakahara
中原  浩介
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Fuji Electric Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a laser processing method by which a substrate without particle contamination and patterned by high-quality thin film can be attained at high yield, and to provide a laser processor.SOLUTION: The laser processor includes: a conveyance means for conveying a substrate 1 along a predetermined route; a liquid tank 20 that is arranged so that the substrate 1 may be immersed in a liquid 21 on the midway of the conveyance route for the substrate and be taken out therefrom; a laser beam irradiation device 30 that directs a laser beam to a thin film through the liquid 21 in the liquid tank 20 to pattern the thin film into a predetermined shape; and a liquid removing device 40 for removing a liquid adhered to the surface of the substrate taken out from the liquid tank 20. The laser processor is used to process the substrate having a thin film with a laser.

Description

本発明は、薄膜が形成された基板にレーザ光を照射してパターニングするレーザ加工方法及びレーザ加工装置に関する。   The present invention relates to a laser processing method and a laser processing apparatus for patterning by irradiating a laser beam onto a substrate on which a thin film is formed.

加工技術の一つとして、レーザ加工がある。レーザ加工は、加工精度に優れることから、太陽電池の製造工程など、様々な分野において広く用いられている。   One of the processing techniques is laser processing. Laser processing is widely used in various fields such as a solar cell manufacturing process because of its excellent processing accuracy.

しかしながら、被加工物にレーザ光を照射してレーザ加工する際、被加工物の加工残渣が飛散して被加工物表面に再付着し易かった。   However, when laser processing is performed by irradiating the workpiece with laser light, processing residues of the workpiece are scattered and easily reattached to the surface of the workpiece.

このため、レーザ加工部の周辺に、パーティクル回収用の集塵機構などを設けて、加工残渣の飛散を防止することが従来より行われているが、集塵機構は排気により行うため、大容量の排気ブロアが必要であり、設備の大型化、消費電力の増大などの問題があった。また、集塵機構から大量の排気を行った場合、製造ラインの温度や湿度が変動するので、空調設備の増強が必要であった。   For this reason, a dust collection mechanism for collecting particles is provided around the laser processing unit to prevent scattering of processing residues, but since the dust collection mechanism is exhausted, a large capacity exhaust A blower was required, and there were problems such as increased equipment size and increased power consumption. In addition, when a large amount of exhaust air is exhausted from the dust collection mechanism, the temperature and humidity of the production line fluctuate, so it is necessary to reinforce the air conditioning equipment.

また、特許文献1、2には、被加工物を液体中に配置してレーザ加工を行うことで、加工残渣の飛散を防止でき、パーティクル汚染を抑制できることが開示されている。   Further, Patent Documents 1 and 2 disclose that by disposing a workpiece in a liquid and performing laser processing, scattering of processing residues can be prevented and particle contamination can be suppressed.

特開平6−142971号公報JP-A-6-142971 特開2001−219290号公報JP 2001-219290 A

しかしながら、引用文献1,2には、レーザ加工後の被加工物を液体から取出した後の処理に関しては何ら開示されていない。液滴が付着したまま、次工程に搬送されて、最終製品などに組み込まれると、最終製品の品質にバラつきが生じたり、故障の原因につながる。特に、太陽電池基板などの半導体薄膜が形成された基板においては、薄膜の不純物濃度が液滴によって変動し、該基板を取り込んだ最終製品の性能がバラツキ易かった。   However, the cited documents 1 and 2 do not disclose any processing after the workpiece after laser processing is taken out from the liquid. If the droplets are attached and transported to the next process and incorporated into a final product or the like, the quality of the final product may vary or cause failure. In particular, in a substrate on which a semiconductor thin film such as a solar cell substrate is formed, the impurity concentration of the thin film varies depending on the droplets, and the performance of the final product incorporating the substrate is likely to vary.

よって、本発明の目的は、パーティクル汚染が無く、品質の良好な薄膜でパターニングされた基板を歩留まり良く得ることが可能なレーザ加工方法及びレーザ加工装置を提供することにある。   Therefore, an object of the present invention is to provide a laser processing method and a laser processing apparatus capable of obtaining a substrate patterned with a thin film of good quality without particle contamination with a high yield.

上記目的を達成するに当たり、本発明のレーザ加工方法は、薄膜が形成された基板にレーザ光を照射して前記薄膜の一部を除去するレーザ加工方法において、
前記基板を搬送途中で液槽中の液体に浸漬させ、該液体を通してレーザ光を前記薄膜に照射して前記薄膜を所定形状にパターニングするレーザ加工工程と、
前記基板を前記液槽から取り出して、前記基板表面に付着した前記液体を除去する液体除去工程とを含むことを特徴とする。
In achieving the above object, the laser processing method of the present invention is a laser processing method for removing a part of the thin film by irradiating the substrate on which the thin film is formed with laser light.
A laser processing step of immersing the substrate in a liquid in a liquid tank in the middle of transportation, and irradiating the thin film with laser light through the liquid to pattern the thin film into a predetermined shape;
A liquid removal step of removing the liquid from the liquid tank and removing the liquid adhering to the surface of the substrate.

本発明のレーザ加工方法によれば、基板を搬送途中で液槽中の液体に浸漬させ、該液体を通してレーザ光を基板表面の薄膜に照射してパターニングするので、レーザ加工時に加工残渣が発生しても、周囲に飛散せず、基板周囲の液体によって流される。このため、基板表面への加工残渣の再付着を防止でき、パーティクル汚染を抑制できる。また、液体中でレーザ加工するので、基板の熱的損傷を低減できる。そして、このようにして基板をレーザ加工した後、液槽から取出して基板表面に付着した液体をただちに除去するので、液滴による薄膜の不純物濃度などの変動を抑制でき、薄膜の品質のばらつきを抑えることができる。このため、パーティクル汚染が無く、品質の良好な薄膜でパターニングされた基板を歩留まり良く製造することができる。   According to the laser processing method of the present invention, since the substrate is immersed in the liquid in the liquid tank in the middle of conveyance and patterned by irradiating the thin film on the surface of the substrate with the laser beam through the liquid, a processing residue is generated during laser processing. However, it does not scatter around and flows by the liquid around the substrate. For this reason, reattachment of the processing residue to the substrate surface can be prevented, and particle contamination can be suppressed. In addition, since laser processing is performed in a liquid, thermal damage to the substrate can be reduced. Then, after laser processing of the substrate in this way, the liquid adhering to the substrate surface taken out from the liquid tank is immediately removed, so fluctuations in the impurity concentration of the thin film due to droplets can be suppressed, and variations in the quality of the thin film can be suppressed. Can be suppressed. For this reason, it is possible to manufacture a substrate patterned with a thin film of good quality without particle contamination with a high yield.

本発明のレーザ加工方法は、前記基板が可撓性基板であって、可撓性基板が巻取られた巻出し装置から前記可撓性基板を引出して前記液槽中の液体に浸漬させ、該液体中で前記可撓性基板をガイドロールにより搬送させながら前記レーザ加工工程を行った後、前記可撓性基板を前記液槽から取出して前記液体除去工程を行い、巻取り装置で巻き取ることが好ましい。この態様によれば、パーティクル汚染や、液滴による基板の汚染を防止しつつ、ロール・ツー・ロール方式でレーザ加工できる。   In the laser processing method of the present invention, the substrate is a flexible substrate, and the flexible substrate is pulled out from the unwinding device on which the flexible substrate is wound, and immersed in the liquid in the liquid tank. The laser processing step is performed while the flexible substrate is conveyed by a guide roll in the liquid, and then the flexible substrate is taken out of the liquid tank, the liquid removing step is performed, and the film is wound by a winding device. It is preferable. According to this aspect, laser processing can be performed by a roll-to-roll method while preventing particle contamination and contamination of the substrate by droplets.

本発明のレーザ加工方法は、前記液槽中の液体を循環させて使用すると共に、その循環経路の途中で前記液体中の加工残渣を除去することが好ましい。この態様によれば、液槽中の液体を循環利用するので、レーザ加工に要する運転コストをより低減できる。   The laser processing method of the present invention is preferably used by circulating the liquid in the liquid tank and removing processing residues in the liquid in the course of the circulation path. According to this aspect, since the liquid in the liquid tank is circulated and used, the operating cost required for laser processing can be further reduced.

本発明のレーザ加工方法は、前記基板の加工面を鉛直方向下方又は水平方向側方に向けて前記液槽中の液体に浸漬させ、前記レーザ光を鉛直方向下方又は水平方向側方から、前記液体を通して前記薄膜に照射することが好ましい。   In the laser processing method of the present invention, the processing surface of the substrate is immersed in the liquid in the liquid tank so that the processing surface of the substrate is directed downward in the vertical direction or in the horizontal direction. It is preferable to irradiate the thin film through a liquid.

本発明のレーザ加工方法は、前記液体を前記基板の搬送方向と反対方向に流動させながら前記レーザ加工工程を行うことが好ましい。この態様によれば、レーザ加工時に発生した加工残渣を液槽中の液体で効率よく洗い流すことができるので、パーティクル汚染を効率よく防止できる。   In the laser processing method of the present invention, it is preferable to perform the laser processing step while causing the liquid to flow in a direction opposite to the transport direction of the substrate. According to this aspect, the processing residue generated at the time of laser processing can be efficiently washed away with the liquid in the liquid tank, so that particle contamination can be efficiently prevented.

本発明のレーザ加工方法は、前記液体を前記レーザ光の照射位置の移動方向と反対方向に流動させながら前記レーザ加工工程を行うことが好ましい。この態様によれば、レーザ加工時に発生した加工残渣を液槽中の液体で効率よく洗い流すことができるので、パーティクル汚染を効率よく防止できる。   In the laser processing method of the present invention, it is preferable to perform the laser processing step while flowing the liquid in a direction opposite to the moving direction of the irradiation position of the laser light. According to this aspect, the processing residue generated at the time of laser processing can be efficiently washed away with the liquid in the liquid tank, so that particle contamination can be efficiently prevented.

本発明のレーザ加工方法は、前記液体除去工程は、エアーブローによる液滴の除去、吸水ロールによる拭き取り、及び乾燥炉での乾燥の少なくとも1つの手段によって行うことが好ましい。   In the laser processing method of the present invention, it is preferable that the liquid removing step is performed by at least one means of removing droplets by air blow, wiping with a water absorbing roll, and drying in a drying furnace.

また、本発明のレーザ加工装置は、薄膜が形成された基板にレーザ光を照射して前記薄膜の一部を除去するレーザ加工装置において、
前記基板を所定経路に沿って搬送する搬送手段と、
前記基板の搬送経路の途中で前記基板が液体に浸漬されて取り出されるように配置された液槽と、
前記液槽中の液体を通してレーザ光を前記薄膜に照射して前記薄膜を所定形状にパターニングするレーザ光照射装置と、
前記液槽から取り出された前記表面に付着した前記液体を除去する液体除去装置とを備えていることを特徴とする。
Further, the laser processing apparatus of the present invention is a laser processing apparatus that removes a part of the thin film by irradiating the substrate on which the thin film is formed with laser light.
Transport means for transporting the substrate along a predetermined path;
A liquid tank disposed so that the substrate is immersed in a liquid and taken out in the middle of the transport path of the substrate;
A laser beam irradiation device configured to pattern the thin film into a predetermined shape by irradiating the thin film with a laser beam through the liquid in the liquid tank;
And a liquid removing device that removes the liquid adhering to the surface taken out from the liquid tank.

本発明のレーザ加工装置によれば、基板を搬送途中で液槽中の液体に浸漬させ、該液体を通してレーザ光を基板表面の薄膜に照射してパターニングするので、レーザ加工時に加工残渣が発生しても、周囲に飛散せず、基板周囲の液体によって洗い流され、基板への再付着が抑制される。そして、このようにしてレーザ加工された基板は、液槽から取出され、液体除去装置にて基板表面に付着した液体が除去される。このため、パーティクル汚染が無く、品質の良好な薄膜でパターニングされた基板を歩留まり良く製造することができる。   According to the laser processing apparatus of the present invention, since the substrate is immersed in the liquid in the liquid tank while being transported, and laser light is irradiated onto the thin film on the surface of the substrate through the liquid and patterned, processing residues are generated during laser processing. However, it does not scatter around and is washed away by the liquid around the substrate, and reattachment to the substrate is suppressed. Then, the substrate laser-processed in this manner is taken out from the liquid tank, and the liquid adhering to the substrate surface is removed by the liquid removing device. For this reason, it is possible to manufacture a substrate patterned with a thin film of good quality without particle contamination with a high yield.

本発明のレーザ加工装置は、前記基板が可撓性基板であって、前記液槽の前段に、可撓性基板が巻取られた基板巻出し装置が配置され、前記液体除去装置の後段に、液体が除去された基板を巻取る基板巻取り装置が配置され、前記液槽は、前記基板を搬送するためのガイドロールが配置されていることが好ましい。この態様によれば、ロール・ツー・ロール方式で基板をレーザ加工できる。   In the laser processing apparatus of the present invention, the substrate is a flexible substrate, and a substrate unwinding device on which the flexible substrate is wound is disposed in the front stage of the liquid tank, and is disposed in the rear stage of the liquid removing device. It is preferable that a substrate winding device for winding the substrate from which the liquid has been removed is disposed, and the liquid tank is disposed with a guide roll for transporting the substrate. According to this aspect, the substrate can be laser processed by a roll-to-roll method.

本発明のレーザ加工装置は、前記液槽中の液体を取り出して所定経路に沿って流動させた後、前記液槽中に戻す液体循環手段と、前記循環経路の途中で液体中の加工残渣を除去する加工残渣除去装置とを備えることが好ましい。この態様によれば、液槽中の液体を循環利用するので、レーザ加工に要する運転コストをより低減できる。   The laser processing apparatus of the present invention includes a liquid circulation means for taking out the liquid in the liquid tank and flowing it along a predetermined path, and then returning it to the liquid tank, and processing residues in the liquid in the middle of the circulation path. It is preferable to provide a processing residue removing device to be removed. According to this aspect, since the liquid in the liquid tank is circulated and used, the operating cost required for laser processing can be further reduced.

本発明のレーザ加工装置は、前記搬送手段が、前記基板の加工面を鉛直方向下方又は水平方向側方に向けて前記液槽中の液体に浸漬させるように構成され、前記レーザ光照射装置が、前記レーザ光を鉛直方向下方又は水平方向側方から前記薄膜に照射するように構成されていることが好ましい。   The laser processing apparatus of the present invention is configured such that the transport unit is immersed in the liquid in the liquid tank with the processing surface of the substrate facing downward in the vertical direction or laterally in the horizontal direction, and the laser beam irradiation apparatus It is preferable that the thin film is irradiated with the laser beam from below in the vertical direction or from the side in the horizontal direction.

本発明のレーザ加工装置は、前記液槽中で前記液体を前記基板の搬送方向と反対方向に流動させる流動手段を備えることが好ましい。   The laser processing apparatus of the present invention preferably includes a flow means for causing the liquid to flow in a direction opposite to the substrate transport direction in the liquid tank.

本発明のレーザ加工装置は、前記液槽中で前記液体を前記レーザ光の照射位置の移動方向と反対方向に流動させる流動手段を備えることが好ましい。この態様によれば、レーザ加工時に発生した加工残渣を液槽中の液体で効率よく洗い流すことができるので、パーティクル汚染を効率よく防止できる。   The laser processing apparatus of the present invention preferably includes a flow means for causing the liquid to flow in the liquid tank in a direction opposite to the moving direction of the laser light irradiation position. According to this aspect, the processing residue generated at the time of laser processing can be efficiently washed away with the liquid in the liquid tank, so that particle contamination can be efficiently prevented.

本発明のレーザ加工装置は、前記液体除去装置が、エアーブロー、吸水ロール、及び乾燥炉の少なくとも1つの手段を有することが好ましい。   In the laser processing apparatus of the present invention, it is preferable that the liquid removing apparatus has at least one means of an air blow, a water absorption roll, and a drying furnace.

本発明によれば、パーティクル汚染が無く、品質の良好な薄膜でパターニングされた基板を歩留まり良く得ることできる。   According to the present invention, a substrate patterned with a thin film having no particle contamination and good quality can be obtained with a high yield.

本発明のレーザ加工装置の第1の実施形態の概略図である。It is the schematic of 1st Embodiment of the laser processing apparatus of this invention. 本発明のレーザ加工装置の第2の実施形態の概略図である。It is the schematic of 2nd Embodiment of the laser processing apparatus of this invention.

本発明で用いる、「薄膜が表面に形成された基板(以下、薄膜形成基板という)」は、特に限定は無く、どのような形態のものであっても好ましく用いることができる。例えば、ポリエチレンテレフタレート(PET)、ポリエーテルサルフォン(PES)、ポリエチレンナフタレート(PEN)、ポリアリレート(PAR)、ポリアミドイミド(PAI)、ポリベンゾイミダゾール(PBI)、ポリサルフォン(PSF)等の材質から構成される可撓性基板、ガラス基板、ステンレス基板などの表面に、半導体等の薄膜が形成された、太陽電池形成基板等が一例として挙げられる。基板の種類としては、可撓性基板が好ましい。可撓性基板を用いることで、ロール・ツー・ロール方式でのレーザ加工が可能となり、生産性よくレーザ加工することができる。以下、基板材料として可撓性基板を用いた場合を例に挙げて説明する。   The “substrate having a thin film formed on its surface (hereinafter referred to as a thin film forming substrate)” used in the present invention is not particularly limited and can be preferably used in any form. For example, from materials such as polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polyarylate (PAR), polyamideimide (PAI), polybenzimidazole (PBI), polysulfone (PSF), etc. An example is a solar cell forming substrate in which a thin film such as a semiconductor is formed on the surface of a flexible substrate, a glass substrate, a stainless steel substrate, or the like. As the type of substrate, a flexible substrate is preferable. By using a flexible substrate, laser processing by a roll-to-roll method is possible, and laser processing can be performed with high productivity. Hereinafter, the case where a flexible substrate is used as a substrate material will be described as an example.

(第1の実施形態)
図1を用いて、本発明のレーザ加工装置の第1の実施形態を説明する。
(First embodiment)
A first embodiment of the laser processing apparatus of the present invention will be described with reference to FIG.

図1に示すように、このレーザ加工装置は、薄膜形成基板1が巻取られた巻出しロール10の後段(薄膜形成基板1の進行方向下流)に、液槽20が配置されている。巻出しロール10から引き出された薄膜形成基板1は、ガイドロール11により導かれて液槽20に搬送される。   As shown in FIG. 1, in the laser processing apparatus, a liquid tank 20 is disposed at a subsequent stage (downstream in the traveling direction of the thin film forming substrate 1) on which the thin film forming substrate 1 is wound. The thin film forming substrate 1 drawn out from the unwinding roll 10 is guided by the guide roll 11 and conveyed to the liquid tank 20.

液槽20には、レーザ光の吸収率が低く、揮発性の高く、そして薄膜形成基板1の薄膜積層体や基板に腐食や溶出・剥離などのダメージを与えない液体21が充填されている。液体21としては、水が好ましい。   The liquid tank 20 is filled with a liquid 21 that has a low laser beam absorptivity, high volatility, and does not damage the thin film stack or substrate of the thin film forming substrate 1 such as corrosion, elution, or peeling. The liquid 21 is preferably water.

液槽20内の液体21の液面上方には、搬送ロール22が複数(この実施形態では2個)が配置され、液槽20の液体21に浸漬された薄膜形成基板1が、搬送ロール22,22により張力がかけられた状態で搬送される。この実施形態では、薄膜形成基板1のレーザ加工面が鉛直方向下方となるように液体21に浸漬されて搬送される。   A plurality of (two in this embodiment) transport rolls 22 are disposed above the liquid level of the liquid 21 in the liquid tank 20, and the thin film forming substrate 1 immersed in the liquid 21 in the liquid tank 20 is transported by the transport roll 22. , 22 are transported in a tensioned state. In this embodiment, the laser processing surface of the thin film forming substrate 1 is immersed and transported in the liquid 21 so as to be vertically downward.

液槽20の下方には、薄膜形成基板1の進行方向上流側と、進行方向下流側とに接続され、液槽20中の液体21を上流側から抜き取って、下流側に返送する循環経路L1が配置されている。循環経路L1には、加工残渣除去装置23、送液ポンプP1が配置されている。送液ポンプP1を作動することで、液体21に含まれる加工残渣が加工残渣除去装置23で回収されつつ、液槽20内の液体21が、薄膜形成基板1の搬送方向と反対方向(図1の矢印方向)に流動する。加工残渣除去装置23としては、特に限定は無く、液体に含まれる加工残渣を回収できるものであればよく、加工残渣の種類に応じて適宜選択できる。例えば、フィルタ等の濾過装置、薬品により凝集沈殿させて回収する装置、電極間に電圧をかけて加工残渣を電極に引き寄せて回収する装置、遠心分離装置等が挙げられる。加工残渣が電荷を有するものの場合は、電極間に電圧をかけて加工残渣を電極に引き寄せて回収する装置が好ましく用いられる。また、加工残渣が重量物の場合は、遠心分離装置等が好ましく用いられる。   Below the liquid tank 20, a circulation path L1 is connected to the upstream side in the traveling direction of the thin film forming substrate 1 and the downstream side in the traveling direction, and the liquid 21 in the liquid tank 20 is extracted from the upstream side and returned to the downstream side. Is arranged. A processing residue removing device 23 and a liquid feed pump P1 are arranged in the circulation path L1. By operating the liquid feed pump P1, the processing residue contained in the liquid 21 is collected by the processing residue removing device 23, while the liquid 21 in the liquid tank 20 is in the direction opposite to the transport direction of the thin film forming substrate 1 (FIG. 1). In the direction of the arrow). The processing residue removal device 23 is not particularly limited as long as it can recover the processing residue contained in the liquid, and can be appropriately selected according to the type of processing residue. Examples thereof include a filtering device such as a filter, a device that collects and precipitates with a chemical, a device that draws a processing residue by applying a voltage between the electrodes and collects it, and a centrifugal separator. In the case where the processing residue has an electric charge, a device that pulls the processing residue to the electrode and collects it by applying a voltage between the electrodes is preferably used. Further, when the processing residue is heavy, a centrifugal separator or the like is preferably used.

レーザ光照射装置30は、レーザ発振機31と、集光レンズ又はミラー32と、X−Yステージ33とで主に構成され、液体21中で薄膜形成基板1のレーザ加工面に対し、鉛直方向下方からレーザ光を照射できるように配置されている。なお、レーザ光の照射方向は、必ずしも鉛直方向に沿っていなくてもよい。レーザ光としては、YAGレーザ、第二高調波YAGレーザ、第三高調波YAGレーザ、アルゴンイオンレーザ、等が挙げられ、特に限定は無い。   The laser beam irradiation device 30 is mainly composed of a laser oscillator 31, a condenser lens or mirror 32, and an XY stage 33, and is perpendicular to the laser processing surface of the thin film forming substrate 1 in the liquid 21. It arrange | positions so that a laser beam can be irradiated from the downward direction. Note that the irradiation direction of the laser light is not necessarily along the vertical direction. Examples of the laser light include a YAG laser, a second harmonic YAG laser, a third harmonic YAG laser, and an argon ion laser, and are not particularly limited.

液槽20の後段(薄膜形成基板1の進行方向下流)には、液体除去装置40が配置されている。液体除去装置40としては、特に限定は無いが、吸水ロール、エアーブロー装置、乾燥炉等が挙げられ、これらの1種又は2種以上を用いることができる。吸水ロールとしては、ポリエステル系、ポリウレタン系、ポリビニルアルコール系、ポリ塩化ビニル系等の材質からなるものなどが一例として挙げられる。乾燥炉としては、電気乾燥炉、熱風乾燥炉等が挙げられる。   A liquid removing device 40 is disposed downstream of the liquid tank 20 (downstream of the thin film forming substrate 1 in the traveling direction). Although there is no limitation in particular as the liquid removal apparatus 40, a water absorption roll, an air blow apparatus, a drying furnace etc. are mentioned, These 1 type (s) or 2 or more types can be used. Examples of the water absorbing roll include those made of polyester, polyurethane, polyvinyl alcohol, polyvinyl chloride, or the like. Examples of the drying furnace include an electric drying furnace and a hot air drying furnace.

この実施形態では、液体除去装置40は、エアーブロー装置41と、吸水ロール42と、乾燥炉43とで構成され、搬送方向上流から、エアーブロー装置41、吸水ロール42、乾燥炉43の順にそれぞれ配置されている。そして、エアーブロー装置41は、薄膜形成基板1の両面に気体を吹き付けることができるようにノズルが配置されている。また、吸水ロール42は、バックアップロール45と吸水ロール42との隙間を、薄膜形成基板1を通過させることで、薄膜形成基板1の表面に付着した液体を吸水ロール42で拭き取ることができるようにされている。   In this embodiment, the liquid removing device 40 includes an air blow device 41, a water absorption roll 42, and a drying furnace 43. From the upstream side in the transport direction, the air blow device 41, the water absorption roll 42, and the drying furnace 43 are sequentially provided. Has been placed. The air blowing device 41 is provided with nozzles so that gas can be blown onto both surfaces of the thin film forming substrate 1. Further, the water absorbing roll 42 allows the liquid adhering to the surface of the thin film forming substrate 1 to be wiped off by the water absorbing roll 42 by allowing the thin film forming substrate 1 to pass through the gap between the backup roll 45 and the water absorbing roll 42. Has been.

液体除去装置40の後段(薄膜形成基板1の進行方向下流)には、徐電器51、ガイドロール52、巻取りロール50の順に配置され、徐電処理された薄膜形成基板1が、ガイドロール52により導かれて巻取りロール50に巻取られる。   At the subsequent stage of the liquid removing device 40 (downstream in the direction of travel of the thin film forming substrate 1), the slow current forming device 51, the guide roll 52, and the winding roll 50 are arranged in this order. Is taken up by the take-up roll 50.

次に、このレーザ加工装置を用いた、本発明のレーザ加工方法について説明する。   Next, a laser processing method of the present invention using this laser processing apparatus will be described.

まず、薄膜形成基板1を、巻出しロール10から一定速度で引き出して液槽20に導き、薄膜形成基板1を液体21に浸漬させる。なお、液体21には、薄膜形成基板1のレーザ加工面が少なくとも浸漬されればよく、薄膜形成基板1の全体を液体に浸漬させなくてもよい。   First, the thin film forming substrate 1 is pulled out from the unwinding roll 10 at a constant speed and guided to the liquid tank 20, and the thin film forming substrate 1 is immersed in the liquid 21. Note that it is sufficient that at least the laser processed surface of the thin film forming substrate 1 is immersed in the liquid 21, and the entire thin film forming substrate 1 may not be immersed in the liquid.

次に、液体21に浸漬した薄膜形成基板1を、搬送ロール22によって張力をかけた状態で液体中を搬送させる。そして、搬送途中で、レーザ光照射装置30から薄膜形成基板1のレーザ加工面にレーザ光を照射し、薄膜形成基板1をレーザ加工する。レーザ光は、薄膜形成基板1の搬送方向と反対方向で、液槽20内の液体21の流動方向と同じに走査させてレーザ加工を行うことが、液中に存在する加工残渣によるレーザ光の吸収での加工品質低下を回避すると理由から好ましい。このような構成とぜずに、レーザ加工残渣が、その後にレーザ加工領域に浮遊している状態にすると、浮遊している加工残渣が、レーザ透過の妨げになり、所定の深さの加工が行えなかったりするレーザ加工の品質劣化や、浮遊物がレーザにより薄膜形成基板上に付着し、切断箇所が導通状態になったりする問題が生ずることになり、好ましくない。   Next, the thin film forming substrate 1 immersed in the liquid 21 is transported in the liquid in a state where tension is applied by the transport roll 22. Then, the laser processing surface of the thin film forming substrate 1 is irradiated with laser light from the laser light irradiation device 30 during the conveyance, and the thin film forming substrate 1 is laser processed. The laser beam is scanned in the same direction as the flow direction of the liquid 21 in the liquid tank 20 in the direction opposite to the transport direction of the thin film forming substrate 1, and the laser beam is processed by the processing residue existing in the liquid. It is preferable for the reason that processing quality deterioration due to absorption is avoided. Without such a configuration, if the laser processing residue subsequently floats in the laser processing region, the floating processing residue hinders laser transmission and processing at a predetermined depth is prevented. This is not preferable because the quality of laser processing that cannot be performed or floating matter adheres to the thin film forming substrate by the laser and the cut portion becomes conductive.

薄膜形成基板1にレーザ光を照射してレーザ加工すると、基板や薄膜等の屑などの加工残渣が発生するが、液体21は送液ポンプP1により、薄膜形成基板1の搬送方向と反対方向(図1の矢印方向)に流動しているため、発生した加工残渣は液体21によって洗い流され、薄膜形成基板1の周囲から流去される。そして、加工残渣を含んだ液体21は、循環経路L1を通って加工残渣除去装置23に導かれ、加工残渣が取り除かれた後、液槽20に還流する。このため、薄膜形成基板1の周囲には、常に、加工残渣等の異物の少ない液体21が存在している。そのため、薄膜形成基板1の表面には、加工残渣が再付着し難く、パーティクル汚染が生じ難い。また、液体中でレーザ加工を行うので、薄膜が過熱され難く、薄膜が熱的損傷を受けにくい。   When laser processing is performed by irradiating the thin film forming substrate 1 with laser light, processing residues such as scraps such as the substrate and the thin film are generated, but the liquid 21 is fed in a direction opposite to the transport direction of the thin film forming substrate 1 by the liquid feed pump P1 ( Since the fluid flows in the direction of the arrow in FIG. 1, the generated processing residue is washed away by the liquid 21 and is washed away from the periphery of the thin film forming substrate 1. Then, the liquid 21 containing the processing residue is led to the processing residue removing device 23 through the circulation path L1, and after the processing residue is removed, it returns to the liquid tank 20. For this reason, there is always a liquid 21 with little foreign matter such as processing residue around the thin film forming substrate 1. Therefore, the processing residue hardly adheres to the surface of the thin film forming substrate 1 and particle contamination hardly occurs. In addition, since laser processing is performed in a liquid, the thin film is hardly overheated and the thin film is not easily damaged by heat.

ここで、液体21中で薄膜形成基板1にレーザ光を照射する際、水流によって薄膜形成基板1がバタつき、歪みが発生することがある。水流による薄膜形成基板1のバタつきを低減する対策として、以下の(1)、(2)の方法が挙げられる。   Here, when the thin film forming substrate 1 is irradiated with laser light in the liquid 21, the thin film forming substrate 1 may flutter due to water flow, and distortion may occur. The following methods (1) and (2) can be cited as countermeasures for reducing the flutter of the thin film forming substrate 1 due to water flow.

(1)隣接する搬送ロール22どうしの中心間距離を狭くして、液体21の流れに負けない張力で薄膜形成基板1を引っ張る。隣接する搬送ロール22,22どうしの中心間距離は、薄膜形成基板1の材質、膜厚などにより異なるので特に限定しない。
(2)薄膜形成基板1のレーザ加工を搬送ロール22上で行う。薄膜形成基板1が搬送ロール22に接触した状態であれば、液体21中での薄膜形成基板1のばたつきを低減できる。そして、アクチュエーターをレーザ光照射装置30に設置し、レーザ光照射装置30の光学ヘッドと、搬送ロール22との間隔を一定に保ち、焦点距離が一定になるように制御する。
(1) The distance between the centers of adjacent transport rolls 22 is narrowed, and the thin film forming substrate 1 is pulled with a tension that does not lose the flow of the liquid 21. The center-to-center distance between the adjacent transport rolls 22 and 22 is not particularly limited because it varies depending on the material and film thickness of the thin film forming substrate 1.
(2) Laser processing of the thin film forming substrate 1 is performed on the transport roll 22. If the thin film forming substrate 1 is in contact with the transport roll 22, flapping of the thin film forming substrate 1 in the liquid 21 can be reduced. Then, an actuator is installed in the laser light irradiation device 30 and the distance between the optical head of the laser light irradiation device 30 and the transport roll 22 is kept constant, and the focal distance is controlled to be constant.

なお、薄膜形成基板1を長時間液体に浸漬させていると、薄膜や基板に悪影響を及ぼすことがある。例えば、薄膜形成基板1が太陽電池基板である場合、薄膜の不純物濃度が変動し、電池特性のバラつきの原因となる。このため、薄膜形成基板1を液体21に浸漬させる時間は短時間であることが好ましい。   If the thin film forming substrate 1 is immersed in a liquid for a long time, the thin film or the substrate may be adversely affected. For example, when the thin film forming substrate 1 is a solar cell substrate, the impurity concentration of the thin film fluctuates, which causes variations in battery characteristics. For this reason, it is preferable that the time for immersing the thin film forming substrate 1 in the liquid 21 is short.

このようにして、薄膜形成基板1のレーザ加工を液体21内で行った後、液槽20からレーザ加工を行った薄膜形成基板1を取出して液体除去装置40に導き、薄膜形成基板1に付着した液体の除去処理を行う。   In this way, after the laser processing of the thin film forming substrate 1 is performed in the liquid 21, the thin film forming substrate 1 subjected to the laser processing is taken out from the liquid tank 20 and guided to the liquid removing device 40 and attached to the thin film forming substrate 1. The removed liquid is removed.

液体除去装置40では、薄膜形成基板1に対し、エアーブロー装置41から気体(空気、窒素ガスなど)を吹き付けて、表面に付着した液滴を除去する。次に、薄膜形成基板1を、バックアップロール45と吸水ロール42との間を通過させて、薄膜形成基板1の表面に付着している液体を吸水ロール42で拭き取る。そして、乾燥炉43に導入し、乾燥処理を行う。乾燥炉43での乾燥温度は、可撓性基板の融点もしくは形成した薄膜の化学的特性・構造が変化する温度を超えると、基板表面に形成された薄膜が熱的損傷を受けることがある。   In the liquid removing device 40, a gas (air, nitrogen gas, etc.) is blown from the air blowing device 41 to the thin film forming substrate 1 to remove droplets attached to the surface. Next, the thin film forming substrate 1 is passed between the backup roll 45 and the water absorbing roll 42, and the liquid adhering to the surface of the thin film forming substrate 1 is wiped with the water absorbing roll 42. And it introduce | transduces into the drying furnace 43 and performs a drying process. If the drying temperature in the drying furnace 43 exceeds the temperature at which the melting point of the flexible substrate or the chemical characteristics / structure of the formed thin film changes, the thin film formed on the substrate surface may be thermally damaged.

吸水ロール42の交換時期、乾燥炉での乾燥条件は、液体除去装置40の後段に水分計などを設けてインラインで薄膜形成基板1の含水量を検出し、薄膜形成基板1の含水量に応じて調整してもよい。   As for the replacement time of the water absorption roll 42 and the drying conditions in the drying furnace, a moisture meter or the like is provided at the subsequent stage of the liquid removing device 40 to detect the water content of the thin film forming substrate 1 in-line, and according to the water content of the thin film forming substrate 1 May be adjusted.

このようにして液体除去装置40にて、薄膜形成基板1に付着した液体の除去処理を行った後、徐電器51で徐電処理し、巻取りロール50に巻取る。   In this way, after the liquid removal apparatus 40 performs the removal process of the liquid adhering to the thin film forming substrate 1, the liquid removal apparatus 40 performs the slow current treatment with the slow current device 51 and winds it on the winding roll 50.

なお、この実施形態では、薄膜形成基板1の加工面を鉛直方向下方に向けて液槽20中の液体21に浸漬させ、レーザ光を鉛直方向下方から薄膜形成基板1の加工面に照射しているが、薄膜形成基板1の加工面を水平方向側方に向けて液槽20中の液体21に浸漬させ、レーザ光を水平方向側方から薄膜形成基板1の加工面に照射するようにしてもよい。この場合、レーザ光の照射方向は、必ずしも水平方向に沿っていなくてもよい。   In this embodiment, the processed surface of the thin film forming substrate 1 is immersed in the liquid 21 in the liquid tank 20 with the processing surface of the thin film forming substrate 1 facing downward in the vertical direction, and the processing surface of the thin film forming substrate 1 is irradiated from below in the vertical direction. However, the processing surface of the thin film forming substrate 1 is immersed in the liquid 21 in the liquid tank 20 with the processing surface of the thin film forming substrate 1 facing the horizontal direction, and the processing surface of the thin film forming substrate 1 is irradiated from the side of the horizontal direction. Also good. In this case, the irradiation direction of the laser light does not necessarily have to be along the horizontal direction.

(第2の実施形態)
本発明のレーザ加工装置の第2の実施形態について、図2を用いて説明する。なお、第1の実施形態と実質的に同一箇所には、同一符号を付して説明を省略することとする。
(Second Embodiment)
A second embodiment of the laser processing apparatus of the present invention will be described with reference to FIG. It should be noted that substantially the same parts as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.

この実施形態では、液槽20a内の液体21の液面上方に、搬送ロール22aが1個配置されている。この搬送ロール22aは、一部が液体21内に浸漬していて、薄膜形成基板1が搬送ロール22aに密着した箇所に加工用のレーザを照射してレーザ加工を行う。液槽20aは、断面形状が搬送ロール22aのロール面に沿った形状をなし、液槽20a内を流通する液体の断面積が一定とされている。   In this embodiment, one transport roll 22a is disposed above the liquid level of the liquid 21 in the liquid tank 20a. A part of the transport roll 22a is immersed in the liquid 21, and laser processing is performed by irradiating a processing laser to a portion where the thin film forming substrate 1 is in close contact with the transport roll 22a. The liquid tank 20a has a cross-sectional shape that follows the roll surface of the transport roll 22a, and the cross-sectional area of the liquid flowing through the liquid tank 20a is constant.

この実施形態のレーザ加工装置によれば、薄膜形成基板1の裏面側が、搬送ロール22aに密着した状態で液体21に浸漬されるので、レーザ加工の不要な面が液体に曝されずにすみ、液体除去装置40での液体除去処理をより短時間で行うことができる。   According to the laser processing apparatus of this embodiment, the back surface side of the thin film forming substrate 1 is immersed in the liquid 21 in a state of being in close contact with the transport roll 22a, so that an unnecessary surface for laser processing is not exposed to the liquid. The liquid removal process in the liquid removal apparatus 40 can be performed in a shorter time.

また、薄膜形成基板1が搬送ロール22aに密着した状態でレーザ加工するので、液体21中での薄膜形成基板1のばたつきを抑え、精度よくレーザ加工できる。   Further, since the laser processing is performed in a state where the thin film forming substrate 1 is in close contact with the transport roll 22a, the fluttering of the thin film forming substrate 1 in the liquid 21 can be suppressed and laser processing can be performed with high accuracy.

1:薄膜形成基板
10:巻出しロール
11、52:ガイドロール
20、20a:液槽
21:液体
22、22a:搬送ロール
23:加工残渣除去装置
30:レーザ光照射装置
31:レーザ発振機
32:集光ミラー
33:X−Yステージ
40:液体除去装置
41:エアーブロー装置
42:吸水ロール
43:乾燥炉
45:バックアップロール
50:巻取りロール
51:徐電器
L1:循環経路
P1:送液ポンプ
1: Thin film forming substrate 10: Unwinding roll 11, 52: Guide roll 20, 20a: Liquid tank 21: Liquid 22, 22a: Transport roll 23: Processing residue removing device 30: Laser beam irradiation device 31: Laser oscillator 32: Condensing mirror 33: XY stage 40: Liquid removal device 41: Air blow device 42: Water absorption roll 43: Drying furnace 45: Backup roll 50: Winding roll 51: Slow electric device L1: Circulation path P1: Liquid feed pump

Claims (14)

薄膜が形成された基板にレーザ光を照射して前記薄膜の一部を除去するレーザ加工方法において、
前記基板を搬送途中で液槽中の液体に浸漬させ、該液体を通してレーザ光を前記薄膜に照射して前記薄膜を所定形状にパターニングするレーザ加工工程と、
前記基板を前記液槽から取り出して、前記基板表面に付着した前記液体を除去する液体除去工程とを含むことを特徴とするレーザ加工方法。
In the laser processing method of removing a part of the thin film by irradiating the substrate on which the thin film is formed with laser light,
A laser processing step of immersing the substrate in a liquid in a liquid tank in the middle of transportation, and irradiating the thin film with laser light through the liquid to pattern the thin film into a predetermined shape;
A liquid removing step of removing the substrate from the liquid tank and removing the liquid adhering to the surface of the substrate.
前記基板が可撓性基板であって、可撓性基板が巻取られた巻出し装置から前記可撓性基板を引出して前記液槽中の液体に浸漬させ、該液体中で前記可撓性基板をガイドロールにより搬送させながら前記レーザ加工工程を行った後、前記可撓性基板を前記液槽から取出して前記液体除去工程を行い、巻取り装置で巻き取る、請求項1に記載のレーザ加工方法。   The substrate is a flexible substrate, and the flexible substrate is pulled out from the unwinding device on which the flexible substrate is wound, immersed in the liquid in the liquid tank, and the flexible in the liquid 2. The laser according to claim 1, wherein the laser processing step is performed while the substrate is conveyed by a guide roll, and then the flexible substrate is taken out of the liquid tank, the liquid removal step is performed, and the substrate is wound by a winding device. Processing method. 前記液槽中の液体を循環させて使用すると共に、その循環経路の途中で前記液体中の加工残渣を除去する請求項1又は2に記載のレーザ加工方法。   The laser processing method according to claim 1 or 2, wherein the liquid in the liquid tank is used by being circulated, and processing residues in the liquid are removed in the middle of the circulation path. 前記基板の加工面を鉛直方向下方又は水平方向側方に向けて前記液槽中の液体に浸漬させ、前記レーザ光を鉛直方向下方又は水平方向側方から、前記液体を通して前記薄膜に照射する請求項1〜3のいずれか1つに記載のレーザ加工方法。   The processing surface of the substrate is immersed in the liquid in the liquid tank so that the processing surface of the substrate is directed downward in the vertical direction or in the horizontal direction, and the thin film is irradiated with the laser light from the lower side in the vertical direction or from the horizontal direction through the liquid. Item 4. The laser processing method according to any one of Items 1 to 3. 前記液体を前記基板の搬送方向と反対方向に流動させながら前記レーザ加工工程を行う請求項1〜4のいずれか1つに記載のレーザ加工方法。   The laser processing method according to claim 1, wherein the laser processing step is performed while flowing the liquid in a direction opposite to the transport direction of the substrate. 前記液体を前記レーザ光の照射位置の移動方向と反対方向に流動させながら前記レーザ加工工程を行う請求項1〜5のいずれか1つに記載のレーザ加工方法。   The laser processing method according to claim 1, wherein the laser processing step is performed while flowing the liquid in a direction opposite to a moving direction of the irradiation position of the laser light. 前記液体除去工程は、エアーブローによる液滴の除去、吸水ロールによる拭き取り、及び乾燥炉での乾燥の少なくとも1つの手段によって行う請求項1〜6のいずれか1つに記載のレーザ加工方法。   The laser processing method according to any one of claims 1 to 6, wherein the liquid removing step is performed by at least one means of removing droplets by air blow, wiping with a water absorbing roll, and drying in a drying furnace. 薄膜が形成された基板にレーザ光を照射して前記薄膜の一部を除去するレーザ加工装置において、
前記基板を所定経路に沿って搬送する搬送手段と、
前記基板の搬送経路の途中で前記基板が液体に浸漬されて取り出されるように配置された液槽と、
前記液槽中の液体を通してレーザ光を前記薄膜に照射して前記薄膜を所定形状にパターニングするレーザ光照射装置と、
前記液槽から取り出された前記表面に付着した前記液体を除去する液体除去装置とを備えていることを特徴とするレーザ加工装置。
In a laser processing apparatus for removing a part of the thin film by irradiating the substrate on which the thin film is formed with a laser beam,
Transport means for transporting the substrate along a predetermined path;
A liquid tank disposed so that the substrate is immersed in a liquid and taken out in the middle of the transport path of the substrate;
A laser beam irradiation device configured to pattern the thin film into a predetermined shape by irradiating the thin film with a laser beam through the liquid in the liquid tank;
A laser processing apparatus, comprising: a liquid removing device that removes the liquid attached to the surface taken out of the liquid tank.
前記基板が可撓性基板であって、
前記液槽の前段に、可撓性基板が巻取られた基板巻出し装置が配置され、
前記液体除去装置の後段に、液体が除去された基板を巻取る基板巻取り装置が配置され、
前記液槽は、前記基板を搬送するためのガイドロールが配置されている、請求項8に記載のレーザ加工装置。
The substrate is a flexible substrate;
A substrate unwinding device in which a flexible substrate is wound is disposed in the previous stage of the liquid tank,
A substrate take-up device that winds up the substrate from which the liquid has been removed is disposed after the liquid removing device.
The laser processing apparatus according to claim 8, wherein a guide roll for conveying the substrate is disposed in the liquid tank.
前記液槽中の液体を取り出して所定経路に沿って流動させた後、前記液槽中に戻す液体循環手段と、前記循環経路の途中で液体中の加工残渣を除去する加工残渣除去装置とを備える請求項8又は9に記載のレーザ加工装置。   A liquid circulating means for taking out the liquid in the liquid tank and causing it to flow along a predetermined path and then returning it to the liquid tank, and a processing residue removing device for removing processing residues in the liquid in the middle of the circulating path The laser processing apparatus of Claim 8 or 9 provided. 前記搬送手段は、前記基板の加工面を鉛直方向下方又は水平方向側方に向けて前記液槽中の液体に浸漬させるように構成され、前記レーザ光照射装置は、前記レーザ光を鉛直方向下方又は水平方向側方から前記薄膜に照射するように構成されている請求項8〜10のいずれか1つに記載のレーザ加工装置。
The transport means is configured to immerse the processing surface of the substrate in the liquid in the liquid tank with the processing surface of the substrate facing vertically downward or horizontally laterally, and the laser light irradiation device causes the laser light to be vertically downward Or the laser processing apparatus as described in any one of Claims 8-10 comprised so that the said thin film may be irradiated from a horizontal direction side.
前記液槽中で前記液体を前記基板の搬送方向と反対方向に流動させる流動手段を備える請求項8〜11のいずれか1つに記載のレーザ加工装置。   The laser processing apparatus according to any one of claims 8 to 11, further comprising a flow unit configured to flow the liquid in the liquid tank in a direction opposite to a conveyance direction of the substrate. 前記液槽中で前記液体を前記レーザ光の照射位置の移動方向と反対方向に流動させる流動手段を備える請求項8〜12のいずれか1つに記載のレーザ加工装置。   The laser processing apparatus according to any one of claims 8 to 12, further comprising a flow unit configured to flow the liquid in the liquid tank in a direction opposite to a moving direction of the irradiation position of the laser light. 前記液体除去装置は、エアーブロー、吸水ロール、及び乾燥炉の少なくとも1つの手段を有する請求項8〜13のいずれか1つに記載のレーザ加工装置。   The laser processing apparatus according to any one of claims 8 to 13, wherein the liquid removing apparatus includes at least one means of an air blow, a water absorption roll, and a drying furnace.
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