JP2012114191A - Periphery exposure device and method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a periphery exposure device and a method for the same capable of preventing generation of sag phenomenon that makes gentle gradient in a cross section of resist film after removal,and improving periphery exposure precision.SOLUTION: A periphery exposure device exposes peripheral region E of a resist film formed on a periphery of a pattern region P disposed on a wafer W. The device includes: a light source for irradiating light beam; a liquid crystal shutter 50 capable of shading at least a part of the light beam irradiated by the light source, for variably forming widths of a translucent region in circumferential direction and in a direction orthogonal to the circumferential direction on the wafer; and a control part. The peripheral exposure device controls the liquid crystal shutter in response to a signal coming from the control part, forms a translucent region B1, irradiates a light beam having the widest width L1 in the direction orthogonal to the circumferential direction on a starting point S provided at a position adjacent to the pattern region in the peripheral region, and forms a translucent region B2 on the outer peripheral side of the translucent region B1 to perform exposure processing.

Description

  The present invention relates to a peripheral exposure apparatus for a substrate to be processed such as a semiconductor wafer coated with a resist or a glass substrate for LCD, and a method therefor.

  In general, in the manufacturing process of a semiconductor wafer or the like, a photolithography technique is used to form a resist pattern on the surface of a substrate to be processed such as a semiconductor wafer or an LCD substrate. This photolithography technology includes a resist coating process for applying a resist solution to the surface of a substrate to be processed, an exposure processing process for exposing a pattern to the formed resist film, and a development process for supplying a developer to the substrate after the exposure process. Process. In this case, in the resist coating process, a resist solution is supplied (dropped and discharged) to the surface of the substrate to be rotated, and a resist film is formed on the surface of the substrate to be processed by centrifugal force. Therefore, the film thickness of the resist film in the peripheral part of the substrate to be processed is increased, and the film thickness uniformity on the surface of the substrate to be processed is impaired. Further, there is a possibility that the surplus resist film in the peripheral portion is peeled off during the transfer or processing of the substrate to be processed to generate particles. In order to solve these problems, conventionally, the peripheral portion of the substrate to be processed after resist coating is exposed, and the excess resist film on the peripheral portion of the surface of the substrate to be processed is removed by development processing (for example, Patent Documents). 1).

  According to this peripheral exposure technique, a light beam that has passed through a liquid crystal shutter out of a light beam from a light source is subjected to predetermined exposure at a light receiver disposed at a position facing the liquid crystal shutter, and a position between the liquid crystal shutter and the light receiver. Irradiation is performed on the peripheral portion of the substrate arranged corresponding to the width. The control unit controls the light shielding area of the liquid crystal shutter using the signal obtained by this light receiver, changes the area for peripheral exposure using the liquid crystal shutter, and switches the liquid crystal shutter according to the light intensity distribution. By stabilizing the light intensity applied to the substrate in terms of time and space, it is possible to obtain a stable exposure that is not affected by unevenness in light intensity distribution due to the exposure light source or the light guide and changes with time.

Japanese Patent Laid-Open No. 7-45513

  However, in the peripheral exposure technique described in Patent Document 1, an exposure light beam having a rectangular cross section that has passed through the liquid crystal shutter is irradiated to the periphery of the substrate out of the light beam from the light source. There is a concern that a sagging phenomenon in which the slope of the removed cross section of the resist film becomes gentle due to insufficient exposure amount. In addition, since the light beam from the light source that has passed through the liquid crystal shutter is irradiated to the peripheral portion of the substrate and the light receiver, a wide light beam width that irradiates the range from the peripheral portion of the substrate to the light receiver is required. A wide light flux width is generated due to the surface roughness of the optical member, etc., and the irradiation angle to the substrate includes a lot of various scattered light, so that light is irradiated to an area where peripheral exposure is unnecessary, for example, a pattern area of the substrate, There is a concern that pattern formation failure or pattern collapse may occur.

  The present invention has been made in view of the above circumstances, and provides a peripheral exposure apparatus and method capable of improving the peripheral exposure accuracy by preventing the occurrence of a sag phenomenon in which the inclination of the removed cross section of the resist film becomes gentle. It is intended to provide.

  In order to solve the above problems, a peripheral exposure apparatus according to the present invention is a peripheral exposure apparatus that exposes a peripheral region formed around a pattern region of a resist film formed on a substrate, and holds the substrate horizontally. A substrate holding unit for rotating the substrate holding unit on a horizontal plane, a light source for irradiating the peripheral region with a light beam, and at least a part of the light beam irradiated by the light source. A variable light-shielding member that is capable of shielding light, and is formed so that the width in the circumferential direction of the substrate and the width in the direction perpendicular to the circumferential direction of the light-transmitting region are variable; the substrate holding unit; the driving unit; the light source; A control unit that controls the variable light-shielding member, and controls a light-transmitting region of the variable light-shielding member based on a signal from the control unit so as to be close to the pattern region side in the peripheral region. ,the above Width in the direction perpendicular to the direction is carried out by irradiating the exposure process the widest light beam, characterized in that (claim 1).

  Here, the pattern region means not only a region where a resist pattern has already been formed by, for example, double patterning, but also a region reserved for forming the first resist pattern after the peripheral exposure process. The circumferential direction means the rotation direction of the substrate, and the direction orthogonal to the circumferential direction means the radial direction of the substrate.

  In the present invention, based on a signal from the control unit, the translucent area of the variable light shielding member is controlled, and the circumferential direction is set to a start position set at a position close to the pattern area side in the peripheral area. It is preferable that the first exposure process is performed by irradiating the light beam having the widest width in the direction perpendicular to the direction, and then the exposure process is performed by sequentially moving the irradiation position of the light beam from the start position toward the outer peripheral direction. 2).

  The peripheral exposure apparatus of the present invention is a peripheral exposure apparatus that exposes a peripheral region formed around a pattern region of a resist film formed on a substrate, and a substrate holding unit for holding the substrate horizontally A driving unit that rotates the substrate holding unit on a horizontal plane, a light source for irradiating the peripheral region with a light beam, and at least a part of the light beam irradiated by the light source can be shielded, A variable light-shielding member that variably forms a width in the circumferential direction of the substrate of the light-transmitting region and a direction perpendicular to the circumferential direction, and is disposed between the light source and the variable light-shielding member, and is irradiated by the light source A light source-side variable light-shielding member capable of shielding at least a part of the luminous flux and variably forming a width in the circumferential direction and a width in a direction perpendicular to the circumferential direction of the light-transmitting region; and the substrate holding portion, the above A control unit that controls the moving unit, the light source, the variable light shielding member, and the light source side variable light shielding member, and controls the variable light shielding member based on a signal from the control unit, The luminous flux is irradiated over the entire circumferential width of the peripheral area, and the luminous flux having the widest width in the direction orthogonal to the circumferential direction is set at a start position set near the pattern area in the peripheral area. The light-transmitting area is formed so as to be irradiated, the light-transmitting area of the light source side variable light-shielding member is controlled, the first exposure processing is performed at the start position, and then the irradiation position of the light beam is changed from the start position. The exposure processing is performed by sequentially moving in the outer peripheral direction (claim 3).

  The peripheral exposure method of the present invention is a peripheral exposure method for exposing a peripheral region formed around a pattern region of a resist film formed on a substrate, the step of rotating the substrate on a horizontal plane, and irradiation with a light source And controlling a variable light-shielding member that can shield at least a part of the light flux that is formed and variably forms a width in a circumferential direction of the substrate and a width in a direction orthogonal to the circumferential direction, Irradiating a light beam having the widest width in the direction orthogonal to the circumferential direction to a start position set at a position close to the pattern region side in the peripheral region, and then performing the first exposure process; And performing an exposure process by sequentially moving the irradiation position of the light beam from the start position toward the outer circumferential direction. (Claim 4)

  The peripheral exposure method of the present invention is a peripheral exposure method for exposing a peripheral region formed around a pattern region of a resist film formed on a substrate, the step of rotating the substrate on a horizontal plane, and a light source A light source side variable light shielding member that can shield at least a part of the light beam irradiated by the light source and that can change a width in a circumferential direction of the substrate of the translucent region and a direction perpendicular to the circumferential direction. Controlling a variable light-shielding member capable of shielding at least a part of the luminous flux and forming a width of the translucent region in the circumferential direction and a width in a direction perpendicular to the circumferential direction to control the periphery. A light beam is irradiated over the entire circumferential width of the region, and a light beam having the widest width in the direction orthogonal to the circumferential direction is set at a position close to the pattern region side in the peripheral region. I will be irradiated Forming the light-transmitting region, controlling the light-transmitting region of the light source-side variable light-shielding member to perform an initial exposure process at the start position, and then transmitting the light-transmitting region of the light source-side variable light-shielding member And performing an exposure process by sequentially moving the irradiation position of the light beam from the start position toward the outer circumferential direction (Claim 5).

  According to the peripheral exposure apparatus (method) of the present invention, the peripheral region is exposed by irradiating a light beam having the widest width in the direction orthogonal to the circumferential direction at a position close to the pattern region side in the peripheral region. Since the amount of exposure at a position close to the pattern region side can be increased, the occurrence of a sagging phenomenon in which the inclination of the removed cross section of the resist film becomes gentle can be prevented, and the peripheral exposure accuracy can be improved.

  In addition, since the width in the circumferential direction of the light-transmitting region of the variable light-shielding member and the width in the direction perpendicular to the circumferential direction are variably formed, a driving mechanism for changing the movement and width of the light beam is unnecessary. In addition, exposure processing can be performed by changing the luminous flux to a desired width while preventing vibration and dust from being generated by the drive mechanism.

1 is a schematic perspective view showing a resist coating / development processing system to which a peripheral exposure apparatus according to the present invention is applied. It is a schematic plan view which shows the said resist application | coating / development processing system. It is a schematic perspective view of the interface part which comprises the said coating / developing apparatus. It is a schematic sectional drawing which shows embodiment of the periphery exposure apparatus in 1st Embodiment. It is the disassembled perspective view (a) which showed the optical path formed in the peripheral exposure apparatus in 1st Embodiment, and the I section enlarged plan view (b) of (a). It is a schematic plan view which shows the movement aspect of the translucent area | region of the liquid-crystal shutter in 1st Embodiment. FIG. 2A is a schematic plan view showing a light-transmitting area of the liquid crystal shutter when performing the first exposure process in the first embodiment (a), and is a schematic plan view showing a light-transmitting area of the liquid crystal shutter when performing the second exposure process (b). ). FIG. 4 is an enlarged cross-sectional view showing the first exposure process in the first embodiment (a), an enlarged cross-sectional view showing the second exposure process (b), and an enlarged cross-sectional view (c) of the substrate after the development process. It is a schematic plan view which shows the translucent area | region of the liquid-crystal shutter in 2nd Embodiment. It is a schematic plan view which shows the translucent area | region of the liquid-crystal shutter in 3rd Embodiment. It is a schematic plan view which shows the movement aspect of the translucent area | region of the light source side liquid-crystal shutter in 4th Embodiment. FIG. 4A is a schematic plan view showing a light-transmitting state of a liquid crystal shutter when the first exposure process is performed in the fourth embodiment. FIG. 5B is a schematic plan view showing a light-transmitting state of the liquid crystal shutter when performing a second exposure process. ). It is an expanded sectional view (a) showing the first exposure processing in a 4th embodiment, an enlarged sectional view (b) showing the second exposure processing, and an enlarged sectional view (c) of the substrate after development processing.

<First Embodiment>
Hereinafter, a first embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the peripheral exposure apparatus (method) according to the present invention is applied to a resist coating / development processing system for a wafer W as a substrate will be described.

  As shown in FIGS. 1 and 2, the resist coating / development processing system includes a loading / unloading unit 1 for loading / unloading a cassette CB containing wafers W, and a cassette CB in the loading / unloading unit 1. The processing unit 2 mainly performs resist coating / development processing on the wafer W taken out, and an exposure unit 4 connected to the processing unit 2 via an interface unit 3.

  The carry-in / carry-out unit 1 is disposed between the cassette station 6 and the cassette station 6 provided with a placement unit 5 on which a plurality of cassettes CB for hermetically storing, for example, 25 wafers W can be placed. An opening / closing section 7 provided on the wall surface and delivery means A1 for taking out the wafer W from the cassette CB via the opening / closing section 7 are provided.

  In the processing section 2, the wafer W is transferred between the shelf units U1, U2 and U3 in which heating / cooling units are multi-staged in order from the front side and each processing unit including a coating / developing unit described later. Conveying mechanisms A2 and A3 are provided alternately. That is, the shelf units U1, U2, U3 and the main transfer mechanisms A2, A3 are arranged in a line in the front-rear direction when viewed from the loading / unloading unit 1 side, and an opening for wafer transfer (not shown) is formed at each connection site. Thus, the wafer W can freely move in the processing unit 2 from the shelf unit U1 on one end side to the shelf unit U3 on the other end side. The main transport mechanisms A2 and A3 include one surface portion on the shelf units U1, U2 and U3 side arranged in the front-rear direction when viewed from the loading / unloading portion 1, and one surface on the right side liquid processing units U4 and U5 side which will be described later. It is placed in a space surrounded by a partition wall 8 composed of a part and a back part forming one surface on the left side. In the figure, reference numerals 12 and 13 denote temperature / humidity adjusting units including a temperature adjusting device for processing liquid used in each unit, a duct for adjusting temperature / humidity, and the like.

  For example, as shown in FIG. 1, the liquid processing units U4 and U5 are provided with a coating unit COT and a developing device on a storage unit 14 that forms a space for supplying a chemical solution such as a coating solution (resist solution) and a developing solution. The unit DEV and the antireflection film forming unit BARC are stacked in a plurality of stages, for example, five stages. The shelf units U1, U2, and U3 are configured such that various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of stages, for example, 10 stages. And a heating unit for heating (baking) the wafer W, a cooling unit for cooling the wafer W, and the like.

  An exposure unit 4 is connected to the back side of the shelf unit U3 in the processing unit 2 via the interface unit 3. The interface unit 3 is provided between the processing unit 2 and the exposure unit 4 in the front-rear direction, and includes, for example, a transfer chamber 15 and a transfer chamber 16 surrounded by a casing. Referring to FIG. 3, a transport mechanism A4 that can be moved up and down, rotated about a vertical axis, and advanced and retracted is provided at the center of the transport chamber 15. The transport mechanism A4 includes a transfer unit (TRS) 17, The precision temperature control unit 18, the peripheral exposure unit 19 provided with the peripheral exposure apparatus according to the present invention, the buffer cassette 20, and the shelf unit U 3 provided in the processing unit 2 are accessed to transfer the wafer W to and from these units. It is configured to be able to do.

  An example of the flow of wafers in the resist coating / development processing system configured as described above is as follows. First, when a cassette CB in which wafers W are stored is mounted on the mounting table of the loading / unloading unit 1 from the outside. Then, the lid of the cassette CB is removed together with the opening / closing part 7, and the wafer W is taken out by the delivery means A1. Then, the wafer W is transferred to the main transfer mechanism A2 via a transfer unit (not shown) that forms one stage of the shelf unit U1, and is preprocessed for coating processing on one shelf in the shelf units U1 to U3. For example, after an antireflection film forming process and a cooling process are performed, a resist solution is applied by the application unit COT. Next, the wafer W is heated (baked) by a heating unit that forms one shelf of the shelf units U1 to U3, and further cooled, and then transferred to the interface unit 3 via the delivery unit of the shelf unit U3. The wafer W loaded into the interface unit 3 is transferred into the transfer chamber 15 by the transfer mechanism A4, is transferred into the peripheral exposure unit 19, and is subjected to peripheral exposure processing as described later. The wafer W that has undergone the peripheral exposure processing is transferred to the high-precision temperature control unit 18 by the transfer mechanism A4, and the temperature of the surface of the wafer W is set to a set temperature corresponding to the temperature in the exposure apparatus 4 in the high-precision temperature control unit 18. Temperature is controlled with high accuracy. The transfer mechanism A4 transfers the temperature-controlled wafer W to the transfer mechanism A5 via the transfer unit 17, and the wafer W is transferred to the transfer chamber 16. The transferred wafer W is transferred to the exposure unit 4 by the transfer mechanism A5 and exposed. After the exposure, the wafer W is transferred to the main transfer mechanism A2 through the reverse path, developed by the developing unit DEV, and unnecessary resist is removed by the developer. The wafer W is heated (post-baking) by a heating unit that forms one shelf of the shelf units U1 to U3, and then cooled by the cooling unit, and then returned to the original cassette CB on the mounting table of the loading / unloading unit 1. Returned.

  Next, the peripheral exposure apparatus according to the present invention will be described.

  The peripheral exposure apparatus is incorporated in the peripheral exposure unit 19 of the interface unit 3 as described above, and a spin chuck 25 which is a substrate holding unit for horizontally holding the wafer W coated with the resist R; A drive unit 26 that rotates the spin chuck 25 on a horizontal plane, a light source unit 30 that irradiates the peripheral area E of the wafer W with a light beam, and a control unit 40 that controls them are mainly configured.

  As shown in FIG. 5, the wafer W to be subjected to the peripheral exposure process by the peripheral exposure apparatus has a pattern region P of the resist film R and a peripheral region E formed around the pattern region P. Here, the pattern region P is a regular circular region formed in the center of the wafer W reserved for forming the first resist pattern after the peripheral exposure processing. The peripheral region E is a concentric region formed so as to surround the outer periphery of the pattern region P with a uniform width.

  As shown in FIG. 5B, the start position S is set concentrically on the position close to the pattern region P side in the peripheral region E, that is, on the peripheral region E side of the boundary between the peripheral region E and the pattern region P. The width from the start position S to the outer periphery of the wafer W (cut width C) is subjected to peripheral exposure processing. The width of the start position S is set to the same width as the minimum light flux width for performing the exposure process. Note that data relating to the set start position S and data relating to the wafer W (information relating to the diameter and thickness of the wafer W, etc.) are stored in advance in a storage unit in the control unit 40.

  As shown in FIG. 4, the light source unit 30 that irradiates the peripheral region E of the wafer W with a light beam includes a light source 31 for irradiating the peripheral region E of the wafer W and a light source side variable light shielding member. A light source side liquid crystal shutter 60 and a liquid crystal shutter 50 which is a variable light shielding member are mainly configured.

  The light source 31 is formed of a light source that supplies a luminous flux radially, such as ultra-high pressure mercury or a xenon flash. A reflector 32 is provided around the light source 31 so as to cover the light source 31. By reflecting the emitted light beam, the light beam is guided to the light guide rod 34. Further, as shown in FIG. 4, a housing 33 is provided so as to surround the light source 31 and the reflector 32, thereby preventing unnecessary light flux from leaking out of the housing 33.

  The light guide rod 34 is a hollow member having a rectangular cross section, and a reflection film such as chromium is plated on the inner peripheral surface thereof. As shown in FIGS. 4 and 5, the light guide rod 34 that forms the optical path of the light beam emitted from the light source 31 is disposed between the light source 31 and the light source side liquid crystal shutter 60, and surrounds the light source 31 at its upper end. While being disposed in the housing 33, the end opening is directed perpendicular to the light source 31. When a light beam is irradiated from the light source 31, the light beam incident from the upper end of the light guide rod 34 travels through the light guide rod 34 while being reflected by the inner peripheral surface plated with chrome, and has a uniform intensity distribution from the lower end opening. A light beam to be formed is emitted.

  As shown in FIG. 6, the liquid crystal shutter 50 and the light source side liquid crystal shutter 60 are arranged in a two-dimensional matrix formed on the liquid crystal panel surfaces 50a and 60a by applying a voltage to the liquid crystal panel surfaces 50a and 60a. The plurality of sections V are independently changed to a light transmitting region and a light shielding region to transmit or block the light flux irradiated to the liquid crystal panel surfaces 50a and 60a, or to adjust the light transmittance. Therefore, the light blocking region and the light transmitting region of the light beam can be controlled instantaneously and dynamically. Thereby, the liquid crystal shutter 50 and the light source side liquid crystal shutter 60 can block at least a part of the light flux emitted from the light source 31 and are orthogonal to the circumferential width and circumferential direction of the wafer W in the translucent region. The width in the direction is variable. The circumferential direction means the rotation direction of the wafer W, and the direction orthogonal to the circumferential direction means the radial direction of the wafer W.

  In this case, the section V has an interval (length of one side) between the two opposing sides so that the light beam transmitted between the two opposing sides has a minimum beam width for performing the exposure process. Is the determined rectangular (square) region. The partitions V thus set are arranged in a two-dimensional matrix comprising columns X1 to X9 in the direction orthogonal to the circumferential direction of the wafer W and rows Y1 to Y14 in the circumferential direction of the wafer W (see FIG. 6). ).

  As shown in FIGS. 4 and 5, the light source side liquid crystal shutter 60 is disposed horizontally with the wafer W, and is joined to the upper surface of the light source side liquid crystal shutter 60 so as to close the lower end opening of the light guide rod 34 described above. It joins so that the upper end opening part of the cylindrical body 35 may be plugged up. On the other hand, the liquid crystal shutter 50 is disposed horizontally with the wafer W, and is joined to the upper surface so as to close the lower end opening of the cylindrical body 35.

  As shown in FIG. 4, an optical lens 36 that forms an optical path of a light beam is disposed inside the cylinder 35. The optical lens 36 condenses the light beam transmitted through the light source side liquid crystal shutter 60 and guides the light beam toward the wafer W.

  The drive unit 26, light source 31, light source side liquid crystal shutter 60, and liquid crystal shutter 50 of the spin chuck 25 described above are electrically connected to the control unit 40 as shown in FIG. Operation is controlled based on the signal.

  The control unit 40 is constituted by a computer including a microprocessor such as a CPU and an arithmetic processing unit having peripheral circuits thereof, for example, and a calculation program for calculating a beam width, an irradiation position, an exposure time, and the like for each exposure process And a program storage unit for storing an execution program for causing the drive unit 26, the light source 31, the liquid crystal shutter 50, and the light source side liquid crystal shutter 60 of the spin chuck 25 to execute the peripheral exposure processing, and data and settings regarding the wafer W. A storage unit for storing data relating to the start position S and an input unit through which an operator can set and input parameters such as the number of exposures for each wafer W are mainly provided.

  The control unit 40 executes the above-described calculation program based on the data input by the operator to the input unit, the data related to the wafer W read from the storage unit, and the data related to the set start position S. The beam width, the irradiation position, the exposure time, and the like for each exposure process for each W are calculated, and the calculated data is stored in the storage unit.

  The control unit 40 transmits a signal to the liquid crystal shutter 50 and the light source side liquid crystal shutter 60 based on the light flux width and irradiation position data, and forms a two-dimensional matrix formed on the liquid crystal panel surfaces 50a and 60a. Control is performed to change a part or all of the plurality of sections V arranged into a light-transmitting region.

  As shown in FIG. 4, a light receiver 28 is disposed at a position facing the light source unit 30, and a light receiver side liquid crystal shutter 29 is interposed between the light receiver 28 and the light source unit 30. In this case, the light receiver 28 detects the light intensity distribution of the light beam irradiated by the light source unit 30 and transmits the result to the control unit 40.

  The light receiver side liquid crystal shutter 29 is disposed below the wafer W and between the light source unit 30 and the light receiver 28 with the end on the wafer W side inclined upward. The control unit 40 controls the light transmitting region of the light receiver side liquid crystal shutter 29 to transmit only the light beam irradiated on the light receiving surface of the light receiver 28 and reflect the unnecessary light beam obliquely upward. With this configuration, it is possible to suppress unnecessary light flux from being reflected on the periphery of the wafer W and irradiating the pattern region P formed on the wafer W.

  The light source unit 30 described above is provided with a drive mechanism (not shown) that can move the light source unit 30 in the vertical direction. The control unit 40 stores the data transmitted from a sensor (not shown) such as a laser displacement meter that measures the gap between the light source unit 30 and the wafer W during the alignment operation before exposure, and the storage unit in the control unit 40. The drive mechanism is controlled based on data on the wafer W (for example, information on the thickness and warpage of the wafer W). With this configuration, the light source unit 30 can be set to a minimum gap for each wafer W, so that stable exposure processing can be performed and the risk of interference between the wafer W and the light source unit 30 can be reduced. .

  Next, a method for performing an exposure process on the peripheral region E formed around the pattern region P of the resist film R formed on the wafer W using the peripheral exposure apparatus described above will be described.

  First, the wafer W loaded into the interface unit 3 is loaded into the peripheral exposure apparatus by the substrate transfer mechanism A4, and the wafer W is spin chucked by the cooperative action of the substrate transfer mechanism A4 and lifting pins (not shown). Passed to 25. Next, the control unit 40 executes the execution program described above and drives the drive mechanism described above to determine the position of the light source unit 30 in the vertical direction. At this time, the light source side liquid crystal shutter 60 and the liquid crystal shutter 50 are controlled by the control unit 40 so that the light-transmitting area is not formed and the light-shielding area is formed over the entire area.

  Next, the control unit 40 transmits a control signal to the driving unit 26 to rotate the wafer W in the horizontal direction and turns on the light source 31.

  The control unit 40 controls the light source side liquid crystal shutter 60 to change all of the plurality of sections V arranged in a two-dimensional matrix formed on the liquid crystal panel surface 60a into a light transmitting region. In the first exposure process and the second exposure process, which will be described later, the light beam that has passed through the light guide rod 34 is transmitted through a light-transmitting region formed in all sections of the light source side liquid crystal shutter 60 and irradiated onto the optical lens 36. (See FIGS. 8A and 8B). That is, in the first embodiment, the light source is not shielded by the light source side liquid crystal shutter 60.

  The first exposure process is performed on the peripheral area E. At this time, as shown in FIGS. 6, 7 </ b> A, and 8 </ b> A, the control unit 40 has a width in a direction perpendicular to the circumferential direction of the wafer W (hereinafter, referred to as a vertical direction) at the start position S. The first light-transmitting region B1 is formed in the liquid crystal shutter 50 so that the light beam H1 having the widest L1 is irradiated.

  In order to form the light-transmitting region B1 in the liquid crystal shutter 50, the rectangular light-transmitting region B1 formed integrally from, for example, the eight partitions from the fourth column to the eleventh column of the column X2 among the plurality of partitions V. Variable. Thus, by forming the translucent region B1 having the vertical width L1 and the width M1 in the circumferential direction (hereinafter referred to as the horizontal direction) of the wafer W, the widest vertical width L1 is set at the start position S. The light beam H1 can be irradiated (see FIGS. 6 and 7A).

  As described above, the lateral width M1 of the start position S is set to the minimum light flux width for performing the exposure process. On the other hand, the section V is a square in which the interval between two opposing sides, that is, one side is determined so that the light beam transmitted between the two opposing sides has the minimum beam width for performing the exposure process. It is an area. Therefore, the lateral light flux width M1 of the light flux H1 transmitted through the translucent region B1 formed in the column X2 of the section V and having the lateral width M1 is subjected to the exposure process in the same manner as the width of the start position S. (See FIGS. 6, 7A and 8A).

  The optical path in the first embodiment will be described. As shown in FIG. 5, among the light beams irradiated from the light source 31, the light beam that has passed through the light guide rod 34 is irradiated to the liquid crystal panel surface 50a of the light source side liquid crystal shutter 60. The luminous flux that has passed through the light source side liquid crystal shutter 60 whose entire section V is a translucent area is collected by the optical lens 36 and is transmitted through the translucent area B1 of the liquid crystal shutter 50 to the peripheral area E of the wafer W. Irradiated.

  It should be noted that a light flux H1 irradiated to the peripheral area E of the wafer W and a light flux H2 described later are formed symmetrically in a direction orthogonal to the circumferential direction of the wafer W of the wafer W, so that the light transmissive area B1 of the liquid crystal shutter 50 is formed. , B2 are set. By configuring in this way, it is possible to prevent a shortage of exposure.

  The wafer W irradiated with the light beam H1 is exposed for the exposure time calculated while being rotated by the driving unit 26, and in the first exposure process, the light beam width M1 is set at the start position S formed on the concentric circle. A first exposure region is formed. Thus, the exposure amount is increased by irradiating the light beam H1 having the width L1 in the direction orthogonal to the circumferential direction of the widest wafer W to increase the exposure amount at a position close to the pattern region P side in the peripheral region E. Therefore, the occurrence of the sagging phenomenon in which the slope of the removed cross section of the resist film R becomes gentle can be prevented.

  Next, a second exposure process is performed. At this time, as shown in FIG. 6, FIG. 7B and FIG. 8B, the control unit 40 sets the first light-transmitting region B <b> 1 formed in the liquid crystal shutter 50 as a light-blocking region and the light-transmitting region. The translucent region B2 is formed at a position in the outer peripheral direction of the region B1. By forming the translucent region B2, it is possible to irradiate a light beam H2 having a lateral width M2 over a range (irradiation position S2) from the outer periphery of the start position S to the outer peripheral edge of the wafer in the lateral direction. That is, the first exposure process is performed by irradiating the start position S with the light beam H1, and then the second exposure process is performed by moving the irradiation position S2 of the light beam H2 from the start position S toward the outer circumferential direction. Note that the vertical width L2 of the light beam H2 of the wafer W is smaller than the width L1 of the light beam H1.

  In order to form the translucent area B2 in the liquid crystal shutter 50, a rectangular translucent area formed integrally from, for example, 8 sections from the third row to the sixth row of the rows Y7 and Y8 among the plurality of sections V. Variable to B2. In this way, by forming the translucent region B2 having the vertical width L2 and the horizontal width M2, the irradiation position S2 on the outer peripheral side of the start position S can be irradiated with the light flux H2 having the light flux width M2. (See FIG. 6, FIG. 7 (b), FIG. 8 (b)).

  In the second exposure, the outer periphery of the first exposure region formed in the first exposure process is surrounded, and the second exposure region is formed on a concentric circle with the light flux width M2. The exposure can be performed over the entire cut width C by the above two exposure processes. Simultaneously with the end of the exposure process, the control unit 40 transmits a signal to the liquid crystal shutter 50, closes the second light-transmitting region B2 of the liquid crystal shutter 50, and shields light from the entire area.

  In the exposed region, the resist film R is removed by the developer during the development process. After removing the resist film R, as shown in FIG. 8C, the removed cross section of the resist film R is kept vertical, and the unnecessary resist film R is hardly left. That is, it is possible to prevent the occurrence of a sagging phenomenon in which the slope of the removed cross section of the resist film R becomes gentle. The removed resist film R is indicated by an imaginary line.

  According to the first embodiment, the light beam H1 having the width L1 in the direction orthogonal to the circumferential direction of the widest wafer W is applied to the start position S set near the pattern area P side in the peripheral area E. Since the exposure amount at the start position S can be increased by irradiating and exposing, the occurrence of a sagging phenomenon in which the slope of the removed cross section of the resist film R becomes gentle is prevented, and the peripheral exposure accuracy is improved. be able to.

  Further, the movement and width of the light flux are changed by forming the width in the direction perpendicular to the circumferential direction of the wafer W and the width in the direction perpendicular to the circumferential direction of the wafer W in the translucent region of the liquid crystal shutter 50. Therefore, exposure processing can be performed by changing the light flux to a desired width while preventing vibration and dust from being generated by the drive mechanism.

  Further, the first exposure processing is performed by irradiating the light beam H1 to the start position S set at a position close to the pattern region P side in the peripheral region E, and then the irradiation position S2 of the light beam H2 is changed from the start position S to the outer circumferential direction. By performing the exposure process while moving toward the surface, the light flux width in the circumferential direction of the wafer W can be narrowed, and the scattered light contained in the light beam irradiated in the exposure process can be reduced. The occurrence of falling can be suppressed.

<Second and Third Embodiments>
In the first embodiment, the exposure is performed over the entire cut width C by the two exposure processes. However, the exposure process may be performed once. For example, the light-transmitting area of the liquid crystal shutter 50 is controlled to irradiate the light flux over the circumferential cut width C of the peripheral area E, and at a position close to the pattern area P side in the peripheral area E. The light beam having the widest width in the direction perpendicular to the circumferential direction of W may be irradiated and exposed over the entire cut width C in one exposure process.

  In the second embodiment, as shown in FIGS. 6 and 9, among the plurality of sections V of the liquid crystal shutter 50, for example, the eight sections from the fourth column to the eleventh column of the column X2 and the third column of the rows Y7 and Y8. To a sixth row, a substantially horizontal T-shaped translucent region B3 is formed integrally from a total of 16 sections of 8 sections.

  In this way, by forming the translucent region B3, the lateral width M4 of the translucent region B3 is formed to be the same as the cut width C. Therefore, over the circumferential cut width C of the peripheral region E. In addition to the irradiation with the light beam, the light beam having the widest vertical width L1 can be irradiated at a position (start position S) close to the pattern region P side in the peripheral region E. Therefore, the exposure process can be performed over the entire cut width C by a single exposure process.

  Instead of the second embodiment, exposure may be performed according to the following third embodiment. In the third embodiment, as shown in FIG. 6 and FIG. 10, among the plurality of sections V of the liquid crystal shutter 50, for example, eight sections from the fourth column to the eleventh column of the column X2 and the third column of the rows Y7 and Y8. To the total of 16 sections of 8 sections from the 6th row to the 6th row, the 5th, 6th, 9th, and 10th columns of the column X3 and the 6th and 9th columns of the column X4 are added to obtain a total of 22 A step-like light-transmitting region B4 formed integrally from the compartment is formed.

  In this way, by forming the light-transmitting region B4, the lateral width M4 of the light-transmitting region B4 is formed to be the same as the cut width C. Therefore, over the circumferential cut width C of the peripheral region E. While being irradiated with the light beam, a light beam having a width L1 in the direction orthogonal to the circumferential direction of the widest wafer W can be irradiated at a position (start position S) close to the pattern region P side in the peripheral region E. Therefore, the exposure process can be performed over the entire cut width C by a single exposure process.

  In the second and third embodiments, the light beam irradiated to the peripheral region E of the wafer W is formed symmetrically in the direction orthogonal to the circumferential direction of the wafer W, so that the light transmitting region B3 of the liquid crystal shutter 50 is formed. , B4 are set. By configuring in this way, it is possible to prevent a shortage of exposure.

  According to the second and third embodiments, exposure is performed by irradiating a light beam having the widest width in the direction orthogonal to the circumferential direction of the wafer W at a position close to the pattern region P side in the peripheral region E. Since the exposure amount at the position close to the pattern region P side in the peripheral region E can be increased, the occurrence of a sagging phenomenon in which the inclination of the removal cross section of the resist film R becomes gentle can be prevented, and the peripheral exposure accuracy can be improved. Can be improved.

  In addition, by forming the width of the translucent region of the liquid crystal shutter 50 in the circumferential direction of the wafer W and the width in the direction orthogonal to the circumferential direction of the wafer W, the vibration and dust generation by the drive mechanism can be prevented, Exposure processing can be performed by changing the luminous flux to a desired width.

  Further, since the number of exposure processes can be reduced as compared with the case where the exposure process is performed a plurality of times, the throughput can be improved.

<Fourth embodiment>
In the first embodiment, the light-transmitting region B1 and the light-transmitting region B2 are sequentially formed on the liquid crystal shutter 50 and the exposure process is performed. However, the light source side liquid crystal shutter 60 disposed between the light source 31 and the liquid crystal shutter 50 is also used. The light-transmitting region may be controlled to perform the exposure process. That is, the liquid crystal shutter 50 is controlled to irradiate the light flux over the circumferential cut width C of the peripheral area E, and at the start position S set at a position close to the pattern area P side in the peripheral area E. In addition, a light-transmitting region is formed so that a light beam having the widest width in the direction orthogonal to the circumferential direction of the wafer W is irradiated, and the light-transmitting region of the light source side liquid crystal shutter 60 is controlled to Exposure processing may be performed, and then the exposure processing may be performed by sequentially moving the irradiation position of the light beam from the start position S toward the outer circumferential direction.

  A method of performing exposure processing on the peripheral region E formed around the pattern region P of the resist film R formed on the wafer W of the fourth embodiment using the peripheral exposure apparatus used in the first embodiment below. explain.

  As in the first embodiment, after the wafer W is loaded into the peripheral exposure apparatus and transferred to the spin chuck 25, the control unit 40 causes the driving unit 26 to rotate the wafer W in the horizontal direction to turn on the light source 31. Light.

  In the same manner as in the second embodiment, the control unit 40 causes the liquid crystal shutter 50 to include, for example, eight sections from the fourth column to the eleventh column of the column X2 and the rows Y7 and Y8 among the plurality of sections V of the liquid crystal shutter 50. A substantially horizontal T-shaped translucent region B3 formed integrally from a total of 16 sections of 8 sections from the third row to the sixth row is formed.

  As described above, the light-transmitting region B3 is irradiated with the light beam over the circumferential cut width C of the peripheral region E, and is set at a position close to the pattern region P side in the peripheral region E. A light transmitting region B3 is formed on S so that a light beam having the widest vertical width L1 is irradiated. Even if the light-transmitting region B <b> 3 is formed in the liquid crystal shutter 50, the light flux is shielded by the light source side liquid crystal shutter 60 disposed between the light source 31 and the liquid crystal shutter 50, so that the exposure process is not performed.

  The first exposure process is performed by controlling the light source side liquid crystal shutter 60. At this time, as shown in FIGS. 11, 12A, and 13A, the control unit 40 forms a light-transmitting region B5 in the light source-side liquid crystal shutter 60, and the light flux is transmitted through the light-transmitting region B5. However, light is transmitted through the eight sections from the fourth column to the eleventh column of the column X2 in the translucent region B3 of the liquid crystal shutter 50, and the start position S is irradiated.

  In order to form the light-transmitting region B5 in the light source side liquid crystal shutter 60, for example, a rectangular light-transmitting region formed integrally from, for example, ten sections from the third column to the twelfth column of the column X2 among the plurality of partitions V. Variable to B5. In this way, by forming the translucent region B5 having the vertical width L3 and the horizontal width M1, the liquid crystal shutter 50 is irradiated with a light beam having the vertical width L3 and the horizontal width M1. (See FIGS. 11 and 12 (a)).

  As shown in FIG. 12A, the light beam irradiated to the liquid crystal shutter 50 is divided into eight sections (vertical direction) from the fourth column to the eleventh column of the column X2 in the light transmission region B3 of the liquid crystal shutter 50. It is possible to irradiate the above eight sections with certainty, including a width L1 and a width M1) in the horizontal direction and further covering the section in the vertical direction (vertical width L3 and width M1 in the horizontal direction). Therefore, it is possible to prevent the exposure amount from being insufficient due to light shielding of the light source side liquid crystal shutter 60. In FIG. 12A, blank sections without diagonal lines (eight sections from the fourth column to the eleventh column in the column X2) are sections through which the light beam is transmitted among the light beams irradiated to the liquid crystal shutter 50.

  Light is transmitted through the light transmitting area B5 of the light source side liquid crystal shutter 60 and further transmitted through the light transmitting area B3 of the liquid crystal shutter 50 (eight sections from the fourth column to the eleventh column of the column X2 in the light transmitting area B3). The light beam H1 is applied to the start position S (FIG. 13A). As in the first exposure process of the first embodiment, the light beam H1 is transmitted through eight sections from the fourth column to the eleventh column of the column X2 in the light-transmitting region B3 of the liquid crystal shutter 50. It has a width L1 in the direction and a width M1 in the horizontal direction.

  The wafer W irradiated with the light beam H1 is exposed for the exposure time calculated while being rotated by the driving unit 26, and in the first exposure process, the light beam width M1 is set at the start position S formed on the concentric circle. A first exposure region is formed. Thus, the exposure amount is increased by irradiating the light beam H1 having the width L1 in the direction orthogonal to the circumferential direction of the widest wafer W to increase the exposure amount at a position close to the pattern region P side in the peripheral region E. Therefore, the occurrence of the sagging phenomenon in which the slope of the removed cross section of the resist film R becomes gentle can be prevented.

  Next, a second exposure process is performed. At this time, as shown in FIG. 11, FIG. 12B and FIG. 13B, the control unit 40 sets the light-transmitting region B <b> 5 formed in the light source side liquid crystal shutter 60 to the light-shielding region and A translucent region B6 is formed at a position in the outer peripheral direction of the region B5. By forming the translucent region B6, a light beam H2 having a lateral width M2 can be irradiated to a range (irradiation position S2) from the outer periphery of the start position S to the outer peripheral edge of the wafer in the horizontal direction. That is, the first exposure process is performed by irradiating the start position S with the light beam H1, and then the second exposure process is performed by moving the irradiation position S2 of the light beam from the start position S toward the outer circumferential direction.

  In order to form the light-transmitting region B6, the rectangular light-transmitting region B6 formed integrally from, for example, 20 partitions from the third row to the seventh row in the rows Y6 to Y9 among the plurality of partitions V is changed. (See FIG. 10). In this way, by forming the translucent region B6 having the vertical width L4 and the horizontal width M3, the liquid crystal shutter 50 is irradiated with the light flux having the vertical width L4 and the horizontal width M3. (See FIG. 11 and FIG. 12 (b)).

  As shown in FIG. 12B, the light beam irradiated to the liquid crystal shutter 50 is divided into eight sections (vertical lengths) from the third row to the sixth row of the horizontal rows Y7 and Y8 in the light-transmitting region B3 of the liquid crystal shutter 50. Irradiating up to the section (vertical width L4 and lateral width M3) including the width L2 in the direction and the width M2 in the horizontal direction and further surrounding the section in a U-shape. Therefore, it is possible to prevent the exposure amount from being insufficient due to the light shielding of the light source side liquid crystal shutter 60. In FIG. 12B, blank sections without diagonal lines (eight sections from the third column to the sixth column in the rows Y7 and Y8) are sections through which the light beam is transmitted among the light beams irradiated to the liquid crystal shutter 50. .

  Light is transmitted through the light transmitting region B6 of the light source side liquid crystal shutter 60, and further transmitted through the light transmitting region B3 of the liquid crystal shutter 50 (eight sections from the third row to the sixth column in the rows Y7 and Y8 of the light transmitting region B3). The emitted light beam H2 is applied to the irradiation position S2 on the outer peripheral side of the start position S (FIG. 13B). Note that, similarly to the second exposure process of the first embodiment, the light beam H2 is transmitted through eight sections from the third row to the sixth row of the horizontal rows Y7 and Y8 in the light-transmitting region B3 of the liquid crystal shutter 50. Therefore, it has a vertical width L2 and a horizontal width M2. Note that the vertical width L2 of the light beam H2 of the wafer W is smaller than the width L1 of the light beam H1.

  In the second exposure, the outer periphery of the first exposure region formed in the first exposure process is surrounded, and the second exposure region is formed on a concentric circle with the light flux width M2. The exposure can be performed over the entire cut width C by the above two exposure processes. Simultaneously with the end of the exposure process, the control unit 40 transmits a signal to the liquid crystal shutter 50 to close the light-transmitting region B3 of the liquid crystal shutter 50 and the light-transmitting region B6 of the light source side liquid crystal shutter 60 and shield the light from the entire area.

  In the exposed region, the resist film R is removed by the developer during the development process. After the removal of the resist film R, as shown in FIG. 13C, the removed cross section of the resist film R is kept vertical and almost no unnecessary resist film R remains. That is, it is possible to prevent the occurrence of a sagging phenomenon in which the slope of the removed cross section of the resist film R becomes gentle. The removed resist film R is indicated by an imaginary line.

  According to the said 4th Embodiment, the effect similar to 1st Embodiment can be acquired. Further, the light beam emitted from the light source is transmitted through a light transmitting region formed in the light source side liquid crystal shutter 60, further transmitted through the light transmitting region of the liquid crystal shutter 50, and irradiated to the peripheral region E of the wafer W. As a result, the light beam that has passed through the narrowly formed light-transmitting region twice is irradiated onto the wafer W, so that the scattered light contained in the irradiated light beam can be further reduced. Can be suppressed.

  In the first and fourth embodiments, the exposure is performed over the entire cut width C by the second exposure process, but the number of exposures may be further increased. In this case, the circumferential width of the peripheral region E that has been subjected to the second exposure process is divided into a plurality of pieces, and the exposure process is performed by sequentially moving from the start position S toward the outer peripheral direction. With this configuration, the light beam width in the direction orthogonal to the rotation direction of the wafer W can be narrowed, and the scattered light contained in the light beam irradiated in the exposure process can be reduced. Can be suppressed.

  In the above embodiment, the pattern area P of the wafer W is an area reserved for forming the first resist pattern after the peripheral exposure process, but a resist pattern may already be formed. For example, in the above-described resist coating / development processing system, when a double patterning process is performed in which the resist pattern is formed by patterning the wafer W twice or more, the wafer having the resist pattern formed by the development process in the development unit DEV. W is heated by a heating unit (post-baking process), and after a predetermined process, a second resist R is applied again by the coating unit COT. In this case, a new resist film R in which the formed resist pattern is buried in the resist R is formed on the wafer W. The peripheral exposure processing apparatus described above can perform the peripheral exposure process described above also on the wafer W on which the new resist film R is formed. In this case, the pattern area P of the wafer W is an area where a resist pattern is formed in the first development process.

  The example of the embodiment of the present invention has been described above, but the present invention is not limited to this embodiment and can take various forms. For example, the light transmitting area is formed by arranging a plurality of sections V in a two-dimensional matrix on the liquid crystal shutter 50 and the light source side liquid crystal shutter 60, but it is also possible to form the light transmitting area by forming other patterns. . For example, although the case where the peripheral exposure apparatus (method) according to the present invention is applied to a resist coating / development processing system for a semiconductor wafer has been described, it is needless to say that the peripheral exposure apparatus (method) can also be applied to a resist coating / development processing system for an LCD glass substrate. The peripheral exposure apparatus according to the present invention can be used as a single apparatus without being incorporated in the system.

W Wafer (Substrate)
R Resist film P Pattern region E Peripheral region B1, B2, B3, B4, B5, B6 Translucent region H1, H2 Light flux L1, L2, L3, L4 Vertical width (width in a direction perpendicular to the circumferential direction of the substrate)
M1, M2, M3, M4 Horizontal width (width in the circumferential direction of the substrate)
S start position S2 irradiation position 25 spin chuck (substrate holder)
26 drive unit 31 light source 40 control unit 50 light source side liquid crystal shutter (light source side variable light shielding member)
60 Liquid crystal shutter (variable light shielding member)

Claims (5)

A peripheral exposure apparatus that exposes a peripheral region formed around a pattern region of a resist film formed on a substrate,
A substrate holder for holding the substrate horizontally;
A drive unit for rotating the substrate holding unit on a horizontal plane;
A light source for irradiating the peripheral area with a light beam;
A variable light-shielding member capable of shielding at least a part of the light beam irradiated by the light source and variably forming a width in a circumferential direction of the substrate and a width in a direction perpendicular to the circumferential direction;
A control unit for controlling the substrate holding unit, the driving unit, the light source, and the variable light-shielding member;
Based on a signal from the control unit, the light-transmitting region of the variable light-shielding member is controlled, and the light flux having the widest width in the direction orthogonal to the circumferential direction at a position close to the pattern region side in the peripheral region A peripheral exposure apparatus that performs an exposure process by irradiating with light. The peripheral exposure apparatus according to claim 1, wherein
A direction orthogonal to the circumferential direction at a start position that is set at a position close to the pattern region side in the peripheral region by controlling the light-transmitting region of the variable light-shielding member based on a signal from the control unit A peripheral exposure apparatus characterized in that the first exposure process is performed by irradiating a light beam having the largest width, and then the exposure process is performed by sequentially moving the irradiation position of the light beam from the start position toward the outer circumferential direction. A peripheral exposure apparatus that exposes a peripheral region formed around a pattern region of a resist film formed on a substrate,
A substrate holder for holding the substrate horizontally;
A drive unit for rotating the substrate holding unit on a horizontal plane;
A light source for irradiating the peripheral area with a light beam;
A variable light-shielding member capable of shielding at least a part of the light beam irradiated by the light source and variably forming a width in a circumferential direction of the substrate and a width in a direction perpendicular to the circumferential direction;
Between the light source and the variable light shielding member, at least a part of the light beam emitted by the light source can be shielded, and the width of the translucent area in the direction perpendicular to the circumferential direction and the circumferential direction. A light-source-side variable light-shielding member that can be formed with a variable width;
A control unit for controlling the substrate holding unit, the driving unit, the light source, the variable light shielding member, and the light source side variable light shielding member,
Based on a signal from the control unit, the variable light-shielding member is controlled to irradiate a light beam over the entire circumferential width of the peripheral region, and at a position close to the pattern region side in the peripheral region. Forming the light-transmitting region so that the light beam having the widest width in the direction orthogonal to the circumferential direction is irradiated to the set start position, and controlling the light-transmitting region of the light source side variable light shielding member, A peripheral exposure apparatus characterized in that an initial exposure process is performed at a start position, and then an exposure process is performed by sequentially moving an irradiation position of a light beam from the start position toward an outer peripheral direction. A peripheral exposure method for exposing a peripheral region formed around a pattern region of a resist film formed on a substrate,
Rotating the substrate on a horizontal plane;
Controls a variable light-shielding member that can shield at least a part of a light beam irradiated by a light source, and that can variably form a width in a circumferential direction of a substrate of a light-transmitting region and a width in a direction perpendicular to the circumferential direction. Irradiating a light beam having the widest width in a direction orthogonal to the circumferential direction to a start position set at a position close to the pattern region side in the peripheral region, and performing an initial exposure process;
And a step of performing exposure processing by controlling the light-transmitting region of the variable light-shielding member and sequentially moving the irradiation position of the light flux from the start position toward the outer peripheral direction. A peripheral exposure method for exposing a peripheral region formed around a pattern region of a resist film formed on a substrate,
Rotating the substrate on a horizontal plane;
A light source side variable light shielding member capable of shielding at least a part of a light beam irradiated by a light source and capable of variably forming a width in a circumferential direction of a substrate of a translucent region and a width in a direction perpendicular to the circumferential direction. Controlling a variable light-shielding member that can shield at least a part of the transmitted light flux and variably forms a width of the light-transmitting region in the circumferential direction and a direction perpendicular to the circumferential direction, The luminous flux is irradiated over the entire circumferential width of the peripheral area, and the luminous flux having the widest width in the direction orthogonal to the circumferential direction is set at a start position set near the pattern area in the peripheral area. Forming the translucent region so that is irradiated,
Controlling the light-transmitting region of the light source side variable light-shielding member and performing an initial exposure process at the start position;
And a step of performing exposure processing by controlling a light-transmitting region of the light source side variable light-shielding member and sequentially moving the irradiation position of the light beam from the start position toward the outer peripheral direction. Method.

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