JP3326863B2 - Peripheral exposure apparatus and method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a peripheral exposure apparatus used for exposing an unnecessary photosensitive layer on a substrate in advance, for example, in a process of manufacturing a semiconductor and a liquid crystal display panel.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels have been frequently used as display elements for calculators, word processors, personal computers, portable televisions and the like. This liquid crystal display panel is formed by patterning a transparent thin-film electrode into a desired shape on a glass substrate as a rectangular plate by a photolithography technique. As an apparatus therefor, a mirror projection type aligner or a step-and-repeat type stepper for exposing an original pattern formed on a mask to a photoresist layer on a glass substrate via a projection optical system is used. The size of a glass substrate as a means to be exposed increases year by year, and a glass substrate having a size of about 500 mm × 500 mm has recently been used.

In an aligner or a stepper for projecting and exposing an original image pattern on such a glass substrate, a plurality of identical mask patterns are usually exposed on almost the entire surface of the glass substrate. In this case, the exposure regions of each mask pattern are arranged so as to form a large margin of about several tens of mm around the periphery of the glass substrate.

Accordingly, when a lithography process is performed using a positive resist, the peripheral portion (margin) of the glass substrate is not exposed, so that the resist remains after the development process. This residual resist may adhere to not only the upper surface of the glass substrate but also the end surface of the glass substrate. For this reason, after the lithography process, when the end face of the glass substrate is locked by some stopper, there is a problem that the remaining resist on the end face is peeled off and becomes dust. Also, due to the above-mentioned process, there is a demand to remove the resist remaining on the peripheral portion on the resist-coated surface other than the glass substrate.

Similarly, in the manufacture of semiconductor devices such as ICs and LSIs, a resist is applied to the surface of a silicon substrate or the like to form a fine pattern, and is exposed and developed to form a resist pattern. Processing such as ion implantation, etching, and lithography is performed using the resist pattern as a mask, and a desired fine pattern is obtained.

In such a process, the substrate after the application of the resist is carried out while its peripheral portion is gripped. At this time, peeling may occur in the resist at the grip portion. Such peeling of the resist occurs when the resist is rubbed against the wall of a container such as a substrate cassette or during the developing process of the substrate.
If such unnecessary resist is peeled off to form dust, a correct pattern cannot be formed, and the yield of the semiconductor device will be extremely reduced. This is a serious problem, especially at present, as integrated circuits become more sophisticated and finer.

Therefore, recently, in addition to the exposure step for forming a pattern, a peripheral exposure method for separately performing exposure is used in order to remove an unnecessary resist in a peripheral portion of the substrate in a development step. In this peripheral exposure method, the substrate and the light guide fiber are relatively moved along the surface direction of the substrate while irradiating the light guided by the light guide fiber to the periphery of the substrate coated with the resist. Or to rotate.

[0008]

However, the portion of the resist that needs to be removed in the developing step is not uniform in shape. For example, a resist film is usually applied to the entire surface of a substrate using a spin coating method or the like, but it is difficult to apply the resist film uniformly over the entire surface of the substrate, and the film thickness tends to be thicker near the periphery than in the center. is there.

[0009] When a portion having a large film thickness is to be exposed by a conventional peripheral exposure apparatus, the amount of exposure energy must be increased. Therefore, in order to obtain a required exposure amount, the illuminance must be increased or the exposure time must be increased. However, there is only a method of increasing the number of times, and there is a problem that the efficiency of the entire process is deteriorated.

The area, shape, and position of a portion to be a holding portion in a later step differ depending on the type of the wafer substrate and the holding mechanism. Further, when a plurality of the same patterns are formed on the entire surface of the substrate, the resist portion to be removed is not limited to a relatively wide portion around the substrate, but also around the pattern in the center of the substrate, that is, between the adjacent patterns. A narrow portion may be included.

Therefore, in the conventional peripheral exposure apparatus in which the peripheral portion of the substrate is simply exposed circumferentially as described above, it is necessary to forcibly expose a narrow portion while being set for a relatively wide peripheral portion. There is a risk of exposing even the resist portion.

As described above, in the conventional peripheral exposure apparatus, when the shape of the resist portion to be removed on the same substrate, such as the thickness and the width, is different, the throughput can be reduced without lowering the throughput.
Exposure of only a necessary portion could not be performed corresponding to a region to be exposed whose thickness or width changes.

SUMMARY OF THE INVENTION Accordingly, it is a first object of the present invention to solve the above problems and to provide a peripheral exposure apparatus capable of efficiently performing peripheral exposure even on a resist having a non-uniform film thickness. It is a second object of the present invention to provide a peripheral exposure apparatus capable of performing exposure in the shape of a circle.

[0014]

In order to achieve the above object, in the peripheral exposure apparatus according to the first aspect of the present invention, a light source and a predetermined irradiation area on a substrate having a surface coated with a photosensitive agent are provided. In a peripheral exposure apparatus having a light guide unit for guiding light from a light source, the peripheral exposure apparatus includes a moving unit that relatively moves an emission end of the light guide unit and the surface along a predetermined movement direction, and includes: The shape of the irradiation area is such that the length along the moving direction is applied on the substrate.
Of a photosensitive agent having a nonuniform film thickness distribution
In order to give a larger exposure dose than the place where the film thickness is thin,
The length of the thick portion is the length of the thin portion.
A direction longer than the length and perpendicular to the moving direction
With respect to the length of the moving member in the moving direction.
Done.

According to a second aspect of the present invention, in the peripheral exposure apparatus according to the first aspect,
An irradiation area changing means for changing the shape of the irradiation area is provided at the emission end. According to a third aspect of the present invention, there is provided a peripheral exposure apparatus for exposing outside of an exposure area of a predetermined mask pattern formed on a substrate by the exposure apparatus. Means for guiding the irradiation area on the substrate, and moving means for relatively moving the irradiation area and the substrate along a predetermined moving direction, wherein the shape of the irradiation area is the moving direction
The length along is the uneven film thickness applied on the substrate
Where the film thickness of the photosensitizer is thicker
So that a large exposure amount is given.
The length is formed to be longer than the length of the thin portion.
Moving in a direction orthogonal to the moving direction.
The irradiation area is configured to vary in length along a direction.
In the peripheral exposure area where the area is scanned on the substrate
Gives a large exposure dose on the outside of the substrate
It was configured as follows. According to a fourth aspect of the present invention, there is provided the peripheral exposure apparatus according to the third aspect, further comprising an irradiation area changing unit for changing a shape of the irradiation area. According to a fifth aspect of the present invention, there is provided a peripheral exposure apparatus for exposing an outside of an exposure area of a predetermined mask pattern formed on a substrate by the exposure apparatus. not a means for guiding the irradiation area on the substrate, and the substrate and the irradiation region and a moving means for moving along a predetermined moving direction, the irradiation region was coated on the substrate
Where the thickness of the photosensitive agent having a uniform thickness distribution is large,
The exposure amount to the substrate is configured to be different in a direction orthogonal to the moving direction so as to give an exposure amount larger than the position where the exposure light is applied. In the peripheral exposure apparatus according to the sixth aspect, in the peripheral exposure apparatus according to the fifth aspect, the shape of the irradiation area has a length along the moving direction.
Is a photosensitive agent having a nonuniform film thickness distribution applied on the substrate.
Where the film thickness is greater than that where the film thickness is small.
The length of the thick portion is adjusted so that the light amount is given.
It is formed to be longer than the above-mentioned length of the thin film portion,
With respect to the direction orthogonal to the moving direction,
It was configured to vary in length . Further, in the peripheral exposure apparatus according to the invention according to claim 7, in the peripheral exposure apparatus according to claim 6, the irradiation region has a side having a first length in a direction orthogonal to the moving direction. , The first
And a side having a second length different from the length. In the peripheral exposure apparatus according to the invention described in claim 8, in the peripheral exposure apparatus described in claim 7, the first length is longer than the second length, and the first length is smaller than the second length. The sides having the second length are located outside the substrate with respect to the sides having the second length.
In the peripheral exposure apparatus according to the ninth aspect,
The peripheral exposure apparatus according to any one of claims 1 to 8, wherein the moving speed is constant. In the peripheral exposure apparatus according to the tenth aspect,
The peripheral exposure apparatus according to any one of claims 1 to 9, wherein the exposure is performed outside the exposure area of the mask pattern on the rectangular substrate. Further, in the peripheral exposure method according to the present invention, in the peripheral exposure method for exposing a predetermined mask pattern formed on the substrate outside the exposure region by the exposure device, the substrate surface may be uneven.
A photosensitive agent having a uniform film thickness distribution is applied, and while the light from the light source is guided to the irradiation area on the substrate, the irradiation area and the substrate are relatively moved along a predetermined moving direction. The peripheral exposure is performed outside the exposure region of the mask pattern , and the portion where the thickness of the photosensitive agent is thick in the peripheral exposure region
To give a larger exposure amount than a portion where the film thickness is thin.
In the irradiation area, the exposure amount to the substrate in the direction perpendicular to the movement direction is configured differently. In the peripheral exposure method according to the twelfth aspect,
12. The peripheral exposure method according to claim 11, wherein a shape of the irradiation area has a length along the moving direction on the substrate.
Thickness of photosensitive agent with non-uniform thickness distribution applied to
A larger exposure dose is given to a portion than a portion having a small film thickness.
As described above, the length of the thick part is the same as that of the thin part.
Is formed longer than the length of
The length along the movement direction changes
It was configured as follows. According to a thirteenth aspect of the present invention, there is provided the peripheral exposure method according to the twelfth aspect, wherein the shape of the irradiation area is variable. According to a fourteenth aspect of the present invention, in the peripheral exposure method according to any one of the eleventh to thirteenth aspects, the moving speed is constant. According to a fifteenth aspect of the present invention, in the peripheral exposure method according to any one of the eleventh to fourteenth aspects, the peripheral exposure area is obtained by scanning the irradiation area on the substrate. In this configuration, a large exposure amount is provided on the outside of the substrate. Also,
In the peripheral exposure method according to the present invention, in the peripheral exposure method for exposing a peripheral exposure area outside an exposure area of a predetermined mask pattern formed on a substrate by an exposure apparatus, the substrate surface may be uneven. A photosensitive agent having a uniform thickness distribution is applied, and peripheral exposure is performed so that a thicker portion of the photosensitive agent in the peripheral exposure region is given a larger exposure amount than a thinner portion. Configured. In the peripheral exposure method according to the seventeenth aspect of the present invention, in the peripheral exposure method according to the sixteenth aspect, the light from the light source is guided to the irradiation area on the substrate while the irradiation area and the substrate are connected to each other. The peripheral exposure is performed outside the exposure area of the mask pattern by relatively moving along a predetermined moving direction. In the peripheral exposure method according to the invention, the shape of the irradiation area may be along the moving direction.
The length is less than the uniform thickness distribution applied to the substrate.
Where the thickness of the photopharmaceutical is thicker than in the thinner part
The length of the thick portion so as to give a proper exposure amount.
Is formed to be longer than the length of the thin portion,
With respect to the direction orthogonal to the moving direction,
The length was changed . Claim 19
In the peripheral exposure method according to the present invention, in the peripheral exposure apparatus according to any one of claims 11 to 18, the substrate is configured to be a rectangular substrate. Claim 2
The edge exposure method of the invention according to 0, the exposure apparatus
Exposure area of a predetermined mask pattern formed on the substrate
In the peripheral exposure method of exposing outside, while guiding light from a light source to an irradiation area on the substrate, the irradiation area and the substrate are relatively moved along a predetermined moving direction to thereby form the mask pattern. A peripheral exposure is performed outside the exposure area, and the irradiation area is related to a direction orthogonal to the moving direction.
The exposure amount to the substrate is different, and the irradiation area is
In the peripheral exposure area by being scanned on the substrate,
Structured so that a large amount of exposure is given outside the substrate
did.

[0016]

According to the present invention, in a peripheral exposure apparatus for exposing an unnecessary resist portion to be removed in advance, a photosensitive agent (resist) is applied to the surface of a substrate, and a light source is applied to a predetermined irradiation area on the surface by a light guide means. And irradiates the resist surface with light from the light emitting end of the light guide, and moves the light emitting end relative to the substrate surface in a predetermined direction by moving means. The shape is configured such that the length along the movement direction changes in a direction orthogonal to the movement direction. That is, it can be said that the shape of the irradiation area of the light irradiated from the exit end of the light guide means is a shape in which a part having a large irradiation area and a part having a small irradiation area are combined.

Here, in the present invention, since the peripheral exposure is performed by relatively moving the irradiation area and the substrate, the intensity of the light applied to the photosensitive agent (resist) applied on the substrate is reduced. The exposure amount for the resist is determined by the product of the irradiation time (exposure time).

[0018] Therefore, when the film thickness of the resist on the substrate is not uniform, is for the thick portion was irradiated with a large portion of the irradiated area, it small irradiation area with respect to a thin portion of the thickness By irradiating the part, even if the relative movement speed between the emission end and the substrate is constant, the exposure time for the thick part increases, so sufficient energy is supplied to the thick part. can do. Therefore, according to the present invention, the peripheral exposure can always be performed at a constant moving speed even if the resist film thickness is not uniform.

Further, if an irradiation area changing means is provided at the emission end of the light guide means, it is possible to change the shape of the irradiation area formed on the substrate. For example, by changing the width of the irradiation region in the direction perpendicular to the moving direction, the width of the exposure region on the substrate (the length along the direction perpendicular to the moving direction) can be changed. Do exposure
The irradiation area shape can be changed by moving the irradiation area
Exposure can be performed while changing according to the conditions. That is,
By changing the irradiation area along the moving direction,
The exposure amount per unit time can be changed.

That is, if the unnecessary resist portion is in a wide range, the irradiation area variable means is controlled to widen the irradiation area so as to correspond to the width. Conversely, if the unnecessary resist portion is in a narrow range, the irradiation area is increased. What is necessary is just to narrow it corresponding to the width.
As described above, according to the present invention, exposure can be performed at a constant moving speed regardless of the position of the unnecessary resist portion on the substrate and the shape of the unnecessary resist portion. In addition, if the irradiation area changing means is configured to be able to change the length of the irradiation area in the moving direction, the exposure time on the substrate can be changed, so that the exposure amount to the resist can be adjusted. Further, according to the peripheral exposure method according to the present invention, the amount of exposure to the substrate in the irradiation area differs in the direction orthogonal to the moving direction. Thereby, even when the resist film thickness is not uniform, the peripheral exposure can be always performed at a constant moving speed. Further, the amount of exposure per unit time can be changed. Further, according to the peripheral exposure method according to the present invention, in a portion where the thickness of the photosensitive agent is thick in the peripheral exposure region,
A larger exposure amount is given than a portion where the film thickness is small. Thereby, even when the resist film thickness is not uniform, the peripheral exposure can be always performed at a constant moving speed.

[0021]

The present invention will be described below with reference to examples.
FIG. 1 shows a peripheral exposure apparatus according to a first embodiment of the present invention, which includes an illumination optical system including a light source lamp 1 and illumination light from the illumination optical system arranged on a stage 8. And light guide means comprising a light guide fiber 10 for guiding the light onto the surface of the substrate 7 having a resist applied to the surface thereof.

First, in the illumination optical system, a lamp 1 as a light source is arranged near a first focal position of an elliptical mirror 2 and has a wavelength (exposure wavelength) having photosensitivity to a resist on a substrate 7.
Supply illumination light (exposure light) for the area. Illumination light from the lamp 1 is reflected by the elliptical mirror 2 so as to be collected near the second focal position of the elliptical mirror 2. The exposure light reflected by the elliptical mirror 2 is incident on the incident end 10a of the light guide fiber 10 via the reflecting mirror 3 which is obliquely provided in the reflection direction of the elliptical mirror 2. Note that a parabolic mirror may be used instead of the elliptical mirror 2.

Here, a shutter 4 is arranged between the elliptical mirror 2 and the reflecting mirror 3 so as to be able to enter and exit from the optical path.
The shutter 4 is located outside the optical path between the elliptical mirror 2 and the reflecting mirror 3 when performing peripheral exposure, and is inserted in the optical path at other times to block exposure light. Further, it can be used for exposure amount control at the time of exposure in conjunction with an exposure amount sensor.

The exposure light guided by the light guide fiber 10 irradiates the surface of the substrate 7 on the stage 8 from the emission end 10b. At this time, an irradiation region having a predetermined shape is formed on the substrate 7. The emission end 10 b is held by the arm 12 so as to face the substrate 7. Here, in the vicinity of the emission end 10b, there are two lower parts along the X direction in the figure.
An aperture 11 composed of a number of aperture blades is provided, and the aperture 11 is driven by an aperture driving mechanism 15.

The arm 12 is provided to be moved in a direction (X, Y) along the surface of the substrate 7 by a moving mechanism 13. The stage 8 is movable in directions (X, Y) along the surface of the substrate 7 and in a normal direction (Z) of the substrate.
Further, it is installed so as to be rotatable around the normal line direction of the substrate 7, and is driven by the drive mechanism 8. The aperture driving mechanism 15, the moving mechanism 13, and the driving mechanism 9 are controlled by the control unit 14, respectively.

The control section 14 previously stores data relating to an area to be exposed around the object to be processed, for example, the width and length of the unnecessary resist portion. This data may be input by an input unit such as a keyboard.

In this embodiment, the reflecting mirror 3 is constituted by a dichroic mirror, and the amount of light is measured by a sensor 5 arranged in the transmission direction of the dichroic mirror. The monitor unit 6 calculates the exposure amount on the substrate 7 based on the measured value, and outputs the result to the control unit 14.

It should be noted that the reflection intensity 3 may be constituted by a half-Muller as long as the light amount loss at the reflection mirror 3 is not tolerated. Further, an edge detection photo sensor (not shown) is provided on the arm 12 at the emission end 10 b of the light guide fiber 10.
The edge of the substrate 7 is first optically detected by the edge detection photosensor.

Accordingly, the exposure time, the set position of the emission end 10b, the relative moving speed between the emission end 10b and the substrate 7, and the like are determined from these data. Specifically, the position of the emission end 10b in the X direction is calculated based on the position of the region to be exposed around in the X direction, and the moving speed is calculated based on the output from the monitor unit 6. Based on these results, the control unit 14 controls the moving mechanism 13 to move the emission end 10b to the calculated set position, and controls the driving mechanism 9 to move the substrate 7 at the calculated speed. Of course, a configuration in which the method of the injection end 10b is moved may be adopted. When an edge detection photosensor (not shown) detects the end of the substrate 7, the control unit 14
Evacuates the shutter 4 to the light path damage and starts exposure to the week.

In this embodiment, the exposure light emission area L on the emission end face 10b of the light guide fiber 10 is shown in FIG.
(B) was configured as shown by the hatched portion. That is, the injection end 1
The length along the movement direction (Y direction) is different from the direction (X direction) orthogonal to the movement direction (Y direction) of Ob. As shown in the sectional view of the substrate 7 in FIG.
In many cases, the thickness of the resist R is large in the peripheral portion, and the shape of the irradiation region S is changed in the moving direction (arrow in the drawing) so that a large amount of exposure energy is irradiated to such a film thickness portion Rt. ) Are provided along the area where the area increases.

When exposing the peripheral portion of the substrate 7, the emission end 10b is set so that the irradiation region Sb is formed on the thick portion Rt of the film. Here, the portion Rt exposed by the irradiation region Sb has a longer exposure time than the portion to be exposed by the irradiation region Sa, and even if the transport speed of the substrate 7 is constant, the portion Rt having a large film thickness is Sufficient exposure energy is supplied. Further, since the amount of exposure energy can be small in a portion where the thickness of the resist R is relatively small, such as the central portion of the substrate 7, the exposure is performed only in the Sa portion having a small area. At this time, Sb having a large area may be shielded from light by the aperture 11. The transfer speed of the substrate 7 may be increased by shielding the irradiation area Sa from light. In this case, the throughput can be improved.

As described above, if the diaphragm 11 is controlled so as to change the shape of the irradiation area in accordance with the change in the film thickness of the resist R in the irradiation area, long exposure is performed in the film thickness portion Rt and long exposure is performed in the thin portion. Exposure can be performed at a constant moving speed regardless of the film thickness, without changing the moving speed such as shortening the exposure time. In particular, in peripheral exposure to a glass plate serving as a substrate of a liquid crystal display element, a method of performing exposure while transporting the glass plate along a predetermined direction is often used, so that the transport speed can be kept constant. The effect of the peripheral exposure apparatus of the present invention is great.

Further, since the width of the irradiation area can be changed by controlling the stop 11, the shape of the unnecessary resist portion to be exposed is changed as shown by the hatched portions in FIGS. 3 (a) and 3 (b). Even if it changes complicatedly, the exposure can be performed at a constant moving speed by controlling the moving mechanism 13 while changing the shape of the irradiation area correspondingly.

In the present embodiment, the shape of the exposure light emission area L of the emission end 10b corresponding to the shape of the irradiation area is substantially L-shaped.
Various shapes are conceivable as shown in FIG . Basically, the length along the moving direction is different in the direction orthogonal to the moving direction, and it is only necessary that the diaphragm 11 can be adjusted to have a large or small area.

For example, when the substrate has a round shape like a wafer, the exposure light emission region may be configured to form a substantially fan-shaped irradiation region as shown in FIG. This has the effect of possible angular velocity of rotating the wafer at a constant, it places the resist film thickness of the wafer peripheral portion is thicker it is possible to supply sufficient exposure energy.

Also, the diaphragm 11 used in this embodiment is used.
Is configured to change the width of the exposure light emission region L one-dimensionally, but may be configured to change the shape of the irradiation region two-dimensionally using, for example, four aperture blades. Further, the aperture 1 may be constituted by a liquid crystal shutter or the like which can be changed into a shape of a region capable of blocking light.

As a modification of the above embodiment, as shown in FIG. 5, a configuration in which a plurality of light guide fibers 20 are combined may be adopted. Here, the configuration is the same as that of the embodiment shown in FIG. 1 except that a plurality of light guide fibers 20 are used.

The irradiation area formed on the substrate by the light emitting end of the light guide fiber 20 indicated by oblique dotted lines in the drawing is equivalent to the irradiation area S _X shown in FIG. 5B. That is, the irradiation area on the substrate can be regarded as having a shape in which the length along the moving direction is different in a direction orthogonal to the moving direction (arrow in the figure). With such a configuration, even when the transport speed of the substrate or the moving speed of the emission end is constant, a sufficient exposure energy can be supplied to a portion having a large resist film thickness.

Here, if a shutter mechanism is provided at the exit end of each light guide fiber 20, a desired irradiation area shape can be obtained. In addition, a desired irradiation region can be obtained by setting each emission end to be rearrangeable and appropriately rearranging according to the resist film thickness and width of the object to be processed.

[0040]

As described above, according to the present invention, the shape of the irradiation area from the exit end of the light guide means is configured so that the length along the moving direction changes in a direction perpendicular to the moving direction. Therefore, it is possible to supply a large amount of exposure light per unit time by changing the shape of the irradiation area in a portion where the thickness of the photosensitive agent on the substrate is large. Thus, the relative movement speed between the substrate and the emission end is always kept constant, so that the peripheral exposure can be executed efficiently.

Further, according to the present invention, the peripheral exposure can be performed without adjusting the moving speed, so that the structure of the moving means itself can be simplified, and the weight and the occupied space and the like exerted on the entire peripheral exposure apparatus can be reduced. The burden can be reduced.

Further, in the peripheral exposure apparatus according to the present invention, since an irradiation region having a desired shape can be formed on the substrate, various patterns such as bar codes and symbols including information on the substrate can be exposed. . Further, since the area of the irradiation region can be made variable, the exposure amount can be adjusted without changing the moving speed. Further, in the peripheral exposure method according to the present invention, the amount of exposure to the substrate in the irradiation area can be varied in a direction orthogonal to the moving direction, so that the peripheral exposure can always be performed at a constant moving speed. Therefore, the peripheral exposure can be performed efficiently. Furthermore, according to the peripheral exposure method according to the present invention, a portion where the thickness of the photosensitive agent is large in the peripheral exposure region can be given a larger exposure amount than a portion where the thickness of the photosensitive agent is small. Even when the thickness is not uniform, the peripheral exposure can always be performed at a constant moving speed. Further, according to the peripheral exposure method according to the present invention, an irradiation region having a desired shape can be formed on a substrate, so that various patterns can be exposed.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a peripheral exposure apparatus according to an embodiment of the present invention.

FIG. 2 is an explanatory view showing peripheral exposure of a substrate by the apparatus shown in FIG. 1;

FIG. 3 is a plan view of a substrate showing an example of peripheral exposure by the apparatus shown in FIG. 1;

FIG. 4 is a diagram showing an example of the shape of an exposure light emission area at the light guide fiber emission end shown in FIG. 1;

FIG. 5 is a schematic diagram illustrating a light guide unit according to a modification of the embodiment shown in FIG. 1;

[Explanation of symbols]

 1: Lamp 2: Elliptic mirror 3: Reflector 4: Shutter 5: Sensor 6: Monitor unit 7: Substrate 8: Stage 9: Driving mechanism 10: Light guide fiber 11: Aperture 12: Arm 13: Moving mechanism 14: Control unit 15: diaphragm drive mechanism R: resist S: irradiation area

────────────────────────────────────────────────── ─── Continuing from the front page (72) Masakazu Murakami, Inventor 3-2-3 Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation (72) Inventor Yoshifumi Nakakoji 3-2-2, Marunouchi, Chiyoda-ku, Tokyo Shares (56) References JP-A-2-56924 (JP, A) JP-A-1-187822 (JP, A) JP-A-3-218619 (JP, A) JP-A-4-199810 (JP, A) A) JP-A-4-291938 (JP, A) JP-A-2-39419 (JP, A) JP-A-3-80528 (JP, A) JP-A 1-112037 (JP, U) JP-A-1 −112040 (JP, U) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/027

Claims (20)

(57) [Claims] 1. A peripheral exposure apparatus comprising: a light source; and a light guide unit for guiding light from the light source to a predetermined irradiation area on a substrate having a surface coated with a photosensitive agent. Moving means for relatively moving the surface along a predetermined moving direction, wherein a shape of an irradiation area from the emission end is along the moving direction.
The uneven length is caused by the uneven thickness distribution applied on the substrate.
Where the thickness of the photosensitive agent is thicker than in the places where the thickness is small.
In order to give a large exposure amount,
The length is longer than the length of the thinner part.
The direction of movement in a direction orthogonal to the direction of movement.
A peripheral exposure apparatus characterized in that a length along a direction changes . 2. The peripheral exposure apparatus according to claim 1, wherein an irradiation area changing means for changing a shape of the irradiation area is provided at the emission end. 3. A peripheral exposure apparatus for exposing an outside of an exposure area of a predetermined mask pattern formed on a substrate by an exposure apparatus, comprising: a light source; and means for guiding light from the light source to an irradiation area on the substrate; Moving means for relatively moving the irradiation area and the substrate along a predetermined moving direction, wherein the shape of the irradiation area has a length along the moving direction,
The photosensitive agent having a nonuniform film thickness distribution applied on the substrate;
Higher exposure dose in thicker areas than in thinner areas
The length of the thick portion is determined by the
Is formed longer than the length of the thin part,
With respect to the direction perpendicular to the direction, the length along the moving direction
Is changed, and the periphery of the irradiation area is scanned on the substrate.
In exposed areas, a large amount of exposure given in the way of the outside of the base plate
Peripheral exposure and wherein the Erareru. 4. The peripheral exposure apparatus according to claim 3, further comprising irradiation area changing means for changing a shape of the irradiation area. 5. A peripheral exposure apparatus for exposing an outside of an exposure area of a predetermined mask pattern formed on a substrate by an exposure apparatus, comprising: a light source; and means for guiding light from the light source to an irradiation area on the substrate; Moving means for relatively moving the irradiation area and the substrate along a predetermined moving direction, wherein the irradiation area has a non-uniform film thickness applied on the substrate.
Where the thickness of the photosensitizer is thicker than where the thickness is thinner
A peripheral exposure device configured to provide a different amount of exposure to the substrate in a direction orthogonal to the moving direction so as to provide a larger amount of exposure. 6. The irradiation area has a shape along the moving direction.
The uneven length is caused by the uneven thickness distribution applied on the substrate.
Where the thickness of the photosensitive agent is thicker than in the places where the thickness is small.
In order to give a large exposure amount,
The length is longer than the length of the thinner part.
The direction of movement in a direction orthogonal to the direction of movement.
The peripheral exposure apparatus according to claim 5, wherein a length along the direction changes . 7. The irradiation area has a shape having a side having a first length and a side having a second length different from the first length in a direction orthogonal to the moving direction. 7. The peripheral exposure apparatus according to claim 6, wherein: 8. The first length is longer than the second length, and the side having the first length is located outside the substrate than the side having the second length. The peripheral exposure apparatus according to claim 7, wherein: 9. The peripheral exposure apparatus according to claim 1, wherein the moving speed is constant. 10. The peripheral exposure apparatus according to claim 1, wherein the exposure is performed outside the exposure area of the mask pattern on the rectangular substrate. 11. A peripheral exposure method for exposing an exposed area of a predetermined mask pattern formed on a substrate by an exposure apparatus, wherein a photosensitive agent having a nonuniform film thickness distribution is applied to the substrate surface.
And which, while directing light from a light source to the irradiation area on the substrate edge exposure and the substrate and the irradiation area to the exposure area outside of the mask pattern by relatively moving along a predetermined moving direction In the peripheral exposure area where the thickness of the photosensitive agent is large.
A peripheral exposure method , wherein the irradiation area has a different exposure amount to the substrate in a direction orthogonal to the moving direction so as to give a larger exposure amount than a thin portion . 12. The shape of the irradiation area is set in the moving direction.
Along the length of the non-uniform film thickness applied on the substrate.
In a place where the film thickness of the photosensitive agent of the cloth is thicker than in a place where the film thickness is thinner
So that a large exposure amount is given before the thick portion.
The length is formed to be longer than the length of the thin portion.
The direction of movement in a direction orthogonal to the direction of movement.
12. The peripheral exposure method according to claim 11, wherein a length along the direction changes . 13. The peripheral exposure method according to claim 12, wherein the shape of the irradiation area is variable. 14. The peripheral exposure method according to claim 11, wherein the moving speed is constant. 15. A peripheral exposure area obtained by scanning the irradiation area on the substrate, wherein a large amount of exposure is given to the outside of the substrate. The peripheral exposure method according to claim 1. 16. A peripheral exposure method for exposing a peripheral exposure area outside an exposure area of a predetermined mask pattern formed on a substrate by an exposure apparatus, wherein a photosensitive agent having a non-uniform thickness distribution is applied to the substrate surface. A peripheral exposure method comprising: performing a peripheral exposure on a portion where the thickness of the photosensitive agent is large in the peripheral exposure region so as to give a larger exposure amount than a portion where the film thickness is small. 17. The mask pattern is moved out of the exposure region by guiding the light from the light source to the irradiation region on the substrate and relatively moving the irradiation region and the substrate along a predetermined moving direction. The peripheral exposure method according to claim 16, wherein peripheral exposure is performed. 18. The shape of the irradiation area may be changed in the moving direction.
Along the length of the non-uniform film thickness applied on the substrate.
In a place where the film thickness of the photosensitive agent of the cloth is thicker than in a place where the film thickness is thinner
So that a large exposure amount is given before the thick portion.
The length is formed to be longer than the length of the thin portion.
The direction of movement in a direction orthogonal to the direction of movement.
18. The peripheral exposure method according to claim 17, wherein a length along the direction changes . 19. The method according to claim 11, wherein the substrate is a rectangular substrate. 20. Prescribed formed on the substrate by the exposure device
Peripheral exposure method for exposing outside the exposure area of the mask pattern
At While guiding light from a light source to an irradiation area on the substrate,
Relative to the irradiation area along the predetermined moving direction.
Moving the mask pattern outside the exposure area
Perform peripheral exposure to The irradiation area is in a direction orthogonal to the moving direction.
The amount of exposure to the substrate is different, Perimeter due to the irradiation area being scanned on the substrate
In the exposure area, a large amount of exposure is given outside the substrate.
A peripheral exposure method characterized by being obtained.