JP2012109582A - Manufacturing method for semiconductor device and manufacturing method for display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable semiconductor device by improving the utilization efficiency of material and by simplifying the manufacturing process.SOLUTION: The manufacturing method comprises the steps of forming a conductive layer on a substrate, forming a light-transmitting layer on the conductive layer, delivering a femtosecond laser onto the light-transmitting layer, and selectively removing the conductive layer and the light-transmitting layer. The conductive layer and the light-transmitting layer may be removed so that an end of the conductive layer is located inside as compared with an end of the light-transmitting layer. Before the delivery of the femtosecond laser, a surface of the light-transmitting layer may be subjected to liquid repellent treatment.

Description

The present invention relates to a method for manufacturing a semiconductor element using a contact hole opening using a femtosecond laser. Further, the present invention relates to a method for manufacturing a semiconductor device including a semiconductor element.

A thin film transistor (hereinafter also referred to as “TFT”) and an electronic circuit using the thin film transistor are formed by laminating various thin films such as a semiconductor, an insulating film, and a conductive film on a substrate, and appropriately forming a predetermined contact hole by a photolithography technique. Manufactured. Photolithographic technology is a technology that uses a light to transfer a circuit pattern or other pattern formed on a transparent flat plate called a photomask onto a target substrate. It is widely used in the manufacturing process. Then, using the pattern transferred onto the substrate using photolithography as a mask, the insulating film, semiconductor film, metal film, etc. existing in the portion to be the contact hole are removed by etching to form a contact hole at a desired position. Can be formed.

In the manufacturing process using the conventional photolithography technology, a multi-step process such as exposure, development, baking, and peeling is required only for handling a mask pattern formed using a photosensitive organic resin material called a photoresist. Become. Therefore, the manufacturing cost inevitably increases as the number of photolithography processes increases. In order to improve such problems, attempts have been made to manufacture TFTs by reducing the photolithography process (
For example, see Patent Document 1). In Patent Document 1, after a resist mask formed by a photolithography process is used once, it is subjected to volume expansion by swelling and used again as a resist mask having a different shape.

JP 2000-133636 A

However, when this photolithography process is used, it is necessary to perform at least five processing steps including photosensitizing agent coating, patterning, development processing, etching processing, and stripping processing. End up. In addition, since various chemicals such as a resist for photosensitizers, a developer used for development, and a stripper used for peeling are used, harmful waste liquid is generated during the process. Expenses are added to manufacturing costs. Furthermore, depending on the case, environmental pollution by the chemical may be considered.

In addition, a defective shape of the conductive layer formed in the contact hole formed using the photolithography process leads to a poor contact between the conductive layers connected through the contact hole,
This may cause a decrease in yield and reliability of the obtained semiconductor device. In particular, when forming a wiring layer for forming a circuit, poor contact of the wiring layer adversely affects electrical characteristics such as a short circuit.

It is an object of the present invention to provide a technique for reducing the photolithography process, simplifying the process, and improving the production capacity in the manufacturing process of the TFT, the semiconductor device using the TFT, and the display device formed by the TFT. To do. Another object of the present invention is to provide a method for forming a component such as a wiring constituting the display device in a desired shape with good controllability.

In the present invention, an opening (contact hole) is formed in an insulating layer and a conductive layer using a femtosecond laser, and a conductive layer covering the opening is formed by discharging a liquid conductive material into the opening. It is characterized by that.

In the method for manufacturing a semiconductor device of the present invention, a conductive layer is formed over a substrate, a light transmissive layer is formed over the conductive layer, and a femtosecond laser is irradiated from the light transmissive layer. The light transmitting layer is selectively removed.

In the method for manufacturing a semiconductor device of the present invention, a conductive layer is formed over a substrate, a light transmissive layer is formed over the conductive layer, and a femtosecond laser is irradiated from the light transmissive layer. A light transmissive layer is selectively removed to form an opening in the conductive film and the light transmissive layer, and a liquid conductive material is dropped into the opening.

In the method for manufacturing a semiconductor device of the present invention, the conductive layer and the light transmission layer may be removed so that the end portion of the conductive layer is disposed inside the end portion of the light transmission layer.

In a method for manufacturing a semiconductor device of the present invention, a first conductive layer is formed over a substrate, a light transmission layer is formed over the first conductive layer, and a femtosecond laser is irradiated from the light transmission layer. The first conductive layer and the light transmission layer are selectively removed to form openings in the first conductive film and the light transmission layers, and a liquid conductive material is dropped into the openings. A second conductive layer electrically connected to the first conductive layer is formed.

In the method for manufacturing a semiconductor device of the present invention, the first conductive layer and the light transmission layer are removed so that the end portion of the first conductive layer is disposed inside the end portion of the light transmission layer. It may be.

In the method for manufacturing a semiconductor device of the present invention, a liquid repellent treatment may be performed on the surface of the light transmission layer.

The present invention can also be used for a display device that is a device having a display function. The display device using the present invention includes an organic substance, an inorganic substance, and an organic substance that emits light called electroluminescence (hereinafter also referred to as “EL”). Alternatively, there are a light-emitting display device in which a light-emitting element in which a layer containing a mixture of an organic substance and an inorganic substance is interposed between electrodes and a TFT are connected, and a liquid crystal display device in which a liquid crystal element having a liquid crystal material is used as a display element.

In the above structure, chromium, molybdenum, nickel, titanium,
One or more of cobalt, copper, and aluminum can be used. The light-transmitting layer that forms the opening can be formed using a material that transmits a femtosecond laser, such as a light-transmitting organic resin.

According to the present invention, a complicated photolithography process can be reduced and a semiconductor device can be manufactured through a simplified process, so that material loss is small and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the cross-section of the light emitting element which can be applied to this invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the equivalent circuit of the light emitting element which can be applied to this invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the cross-sectional structure of the electrophoretic element which can be applied to this invention. 4A and 4B each illustrate a circuit structure in the case where a scan line side driver circuit is formed using TFTs in a display panel of the present invention; 4A and 4B illustrate a circuit structure in the case where a scan line driver circuit is formed using TFTs in a display panel of the present invention (shift register circuit). 4A and 4B illustrate a circuit configuration in the case where a scan line side driver circuit is formed using TFTs in a display panel of the present invention (buffer circuit). It is a top view illustrating a semiconductor device of the present invention. It is a top view illustrating a semiconductor device of the present invention. FIG. 11 is a perspective view illustrating an electronic device using the semiconductor device of the invention. FIG. 11 illustrates an electronic device using a semiconductor device of the present invention.

Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, a method for forming a conductive layer that covers an opening by forming an opening (contact hole) using a femtosecond laser and discharging a liquid conductive material into the opening is described. .

First, the conductive layer 721 is formed over the substrate 720 (FIG. 1A). As the conductive layer 721, for example, titanium (Ti), aluminum (Al), tantalum (Ta), tungsten (
W), molybdenum (Mo), copper (Cu), chromium (Cr), neodymium (Nd), iron (Fe
), Nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silver (Ag), gold (Au)
Platinum (Pt), cadmium (Cd), zinc (Zn), silicon (Si), germanium (G
e) A layer made of a material containing an element selected from zirconium (Zr) and barium (Ba) can be used as a single layer or a stacked layer.

Next, a light-transmitting layer 722 is formed over the conductive layer 721 (FIG. 1A). Here, the light transmission layer 7
22 is not particularly limited as long as it is a thin film formed of a material that transmits laser light. For example, it can be formed using a light-transmitting organic resin or the like. Further, the surface of the light transmission layer 722 may be subjected to a liquid repellent treatment.

Next, a femtosecond laser is irradiated from above the light transmission layer 722 (FIG. 1B). Light transmission layer 72
The conductive layer 721 and the light-transmitting layer 722 can be selectively removed by irradiating the two surfaces with femtosecond laser (FIG. 1C). That is, the conductive layer 721 and the light transmissive layer 72.
The opening 725 can be selectively formed in the area 2. Where the focus of the femtosecond laser is
Adjustment is performed so that the light transmission layer 722 or the conductive layer 721 is located. Note that if the focal position changes due to the undulation of the substrate, an autofocus function may be added to the optical system. Even when the femtosecond laser is irradiated so that the focal point of the femtosecond laser is located in the light transmission layer 722, the light transmission layer 722 is a thin film, so that only the light transmission layer 722 is selectively removed. It is difficult. Accordingly, the lower conductive layer 721 is also removed, and an opening 725 in which the conductive layer 721 and the light transmission layer 722 are opened is formed. Further, when the opening is formed by irradiating the femtosecond laser in this manner, the end of the insulating layer 722 in the opening 725 can be formed inside the end of the conductive layer 721. With such a shape, the exposed area of the conductive layer 721 can be increased while the aperture diameter is kept small. In this manner, an opening with a small diameter can be formed by stacking the conductive layer 721 and the light transmission layer 722 and forming the opening with a femtosecond laser. Even in such an opening, a good connection structure can be formed by forming a contact using a conductive resin material.

Note that the femtosecond laser is irradiated using a laser oscillator that emits a laser (also referred to as a femtosecond laser) that oscillates at a pulse width in the femtosecond ( ^10-15 seconds) range. Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , GdVO ₄ can be used as the laser oscillator.
For example, a laser in which a dopant such as Nd, Yb, Cr, Ti, Ho, Er, or the like is added to a crystal such as.

In this embodiment mode, the opening 725 can be selectively formed by laser light; therefore, a mask and a layer need not be formed, and processes and materials can be reduced. Further, since a femtosecond laser can be used to focus light on a very small spot, a conductive layer and an insulating layer to be processed can be processed into a predetermined shape with high accuracy. And since it heats instantaneously in a short time, there exists an advantage that it is almost unnecessary to heat areas other than a process area | region. Further, by using a femtosecond laser, it is possible to easily process a material that transmits light (absorbs almost no light). In addition, a film in which different materials are stacked in multiple layers can be processed in a single process.

Next, a liquid conductive material 724 is dropped into the opening 725 (FIG. 1D). Here, a droplet discharge (spout) method (its method) that can selectively discharge (spout) droplets of a composition prepared for a specific purpose to form a conductive layer or the like in a predetermined pattern. Depending on the ink jet method). A liquid conductive material (droplet) 724 containing a composition forming material is discharged into the opening 725 and fixed by firing, drying, or the like, and a conductive layer 726 having a desired pattern.
(FIG. 1E).

Here, one mode of a droplet discharge apparatus used for the droplet discharge method is shown in FIG. Droplet discharge means 1403
The individual heads 1405 and 1412 are connected to the control means 1407, and can be drawn in a pre-programmed pattern under the control of the computer 1410. The drawing timing is, for example, the marker 141 formed on the substrate 1400.
1 may be used as a reference. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by the imaging means 1404, converted into a digital signal by the image processing means 1409, is recognized by the computer 1410, a control signal is generated, and sent to the control means 1407. As the imaging unit 1404, a charge coupled device (CCD), an image sensor using a complementary metal oxide semiconductor, or the like can be used. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1408. Based on this information, a control signal is sent to the control means 1407, and each head 1405 of the droplet discharge means 1403 is sent. , Head 1
412 can be controlled individually. The material to be discharged is supplied from the material supply source 1413 and the material supply source 1414 to the head 1405 and the head 1412 through piping.

The inside of the head 1405 has a structure having a space filled with a liquid material as indicated by a dotted line 1406 and a nozzle that is a discharge port. Although not shown, the head 1412 is also the head 140.
5 has the same internal structure. When the nozzles of the head 1405 and the head 1412 are provided in different sizes, different materials can be drawn simultaneously with different widths. With one head, conductive material, organic material, inorganic material, etc. can be discharged and drawn respectively. When drawing in a wide area like an interlayer film, the same material is used from multiple nozzles to improve throughput. It is possible to discharge and draw at the same time. When a large substrate is used, the head 1405 and the head 14
No. 12 can freely scan the substrate in the direction of the arrow to freely set the drawing area, and a plurality of the same pattern can be drawn on one substrate.

In the case of forming a conductive layer by using a droplet discharge method, a conductive layer is formed by discharging a composition containing a conductive material processed into a particulate form and fusing or fusion-bonding and solidifying by firing. In such a conductive layer (or insulating layer) formed by discharging and baking a composition containing a conductive material, the conductive layer (or insulating layer) formed by sputtering or the like is mostly a columnar structure. In many cases, a polycrystalline state having many grain boundaries is exhibited.

In this embodiment, an opening 725 is formed in the light transmission layer 722 using a femtosecond laser, and the conductive layer 726 is formed in the opening 725 by a droplet discharge method. Accordingly, an opening can be formed without performing a complicated photolithography process, and the conductive layer 726 can be in good electrical contact with the conductive layer 721 under the insulating layer regardless of the shape of the opening. Can take. For example, in the opening portion 725, the conductive layer 726 has an opening portion even when the end portion of the insulating layer 722 is formed inside the end portion of the conductive layer 721 (the opening portion has a reverse taper shape) or the opening portion is narrow. Since the liquid conductive material is discharged on the surface, good electrical contact with the conductive layer 721 can be obtained.

In this embodiment mode, a liquid repellent treatment may be performed on the surface of the light transmitting layer 722 before the light transmitting layer 722 is irradiated with the femtosecond laser. When the conductive layer 726 is formed in the opening 725 by performing a liquid repellent treatment on the surface of the light transmission layer 722, a liquid conductive material (droplet) 724 is formed.
However, deposition on the surface of the light transmission layer 722 without entering the opening 725 can be prevented, and the conductive material 724 can flow into the opening 725 with higher accuracy.

(Embodiment 2)
In this embodiment, a method for manufacturing a semiconductor device using the method of Embodiment 1 will be described with reference to FIGS.

Here, the semiconductor device is described using an inverted staggered thin film transistor (an inverted staggered TFT). Note that not only the inverted staggered thin film transistor but also a semiconductor element such as a forward staggered thin film transistor, a coplanar thin film transistor, a diode, or a MOS transistor can be manufactured.

First, the gate electrode layer 182 is formed over the substrate 100 (FIG. 3A). The substrate 100 includes a glass substrate made of barium borosilicate glass, alumino borosilicate glass, etc., a quartz substrate,
A metal substrate or a plastic substrate having heat resistance that can withstand the processing temperature in this manufacturing process can be used. Further, by a CMP method or the like so that the surface of the substrate 100 is planarized,
It may be polished. Note that an insulating layer may be formed over the substrate 100. The insulating layer is formed as a single layer or a stacked layer using an oxide material or a nitride material containing silicon by various methods such as a CVD method, a plasma CVD method, a sputtering method, and a spin coating method. This insulating layer may not be formed, but has an effect of blocking contaminants from the substrate 100.

The gate electrode layer 182 is formed by, for example, a sputtering method or a PVD method (Physical Vap.
or Deposition), low pressure CVD (LPCVD), or plasma CVD
After the conductive layer is formed using a CVD method (Chemical Vapor Deposition) such as a method, the conductive layer can be selectively etched by a photolithography process. As a conductive material for forming the gate electrode layer 182,
An element selected from Ag, Au, Ni, Pt, Pd, Ir, Rh, Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component can be used. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. Alternatively, a single-layer structure or a multi-layer structure may be used, for example, a two-layer structure of a tungsten nitride (WN) film and a molybdenum (Mo) film, a tungsten film with a thickness of 50 nm, aluminum with a thickness of 500 nm, and Silicon alloy (A
(l-Si) film and a titanium nitride film having a thickness of 30 nm may be sequentially stacked. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.

In this embodiment mode, the gate electrode layer is formed by selectively discharging a composition. When the gate electrode layer is selectively formed in this way, there is an effect that the processing step is simplified.

Next, a gate insulating layer 180 is formed over the substrate 100 and the gate electrode layer 182 (FIG. 3A).
)). The gate insulating layer 180 may be formed of a material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer. In this embodiment, a two-layer stack of a silicon nitride film and a silicon oxide film is used. Alternatively, a single layer of silicon oxynitride film or a stack of three or more layers may be used.
A silicon nitride film having a dense film quality is preferably used. In addition, when silver or copper is used for a conductive layer formed by a droplet discharge method, if a silicon nitride film or a NiB film is formed thereon as a barrier film, diffusion of impurities can be prevented and the surface can be planarized. is there. Note that in order to form a dense insulating film with low gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in a reaction gas and mixed into the formed insulating film. Here, a 50-200 nm silicon nitride layer is formed by plasma CVD.

Next, the semiconductor layer 185 a is formed over the gate insulating layer 180 of the substrate 100. Semiconductor layer 18
The material for forming 5a is an amorphous semiconductor (hereinafter also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane. Alternatively, a polycrystalline semiconductor crystallized using heat energy or a semi-amorphous (also referred to as microcrystal or microcrystal; also referred to as “SAS”) semiconductor can be used. Note that the semiconductor layer 185a can be formed by a droplet discharge method in which a droplet of the adjusted composition is discharged from a minute hole to form a layer having a predetermined shape. Moreover, you may form using a printing method. Alternatively, the semiconductor layer 185a may be formed by forming a semiconductor layer over a substrate by a CVD method, a PVD method, a coating method, or the like, and then selectively etching the conductive layer by a photolithography process.

A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or higher as a main material, or polysilicon formed at a process temperature of 600 ° C. or lower. And so-called low-temperature polysilicon, and polysilicon crystallized by adding an element that promotes crystallization. Needless to say, a semi-amorphous semiconductor or a semiconductor containing a crystal phase in part of a semiconductor layer can also be used.

Note that a SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystals and polycrystals) and having a third state that is stable in terms of free energy, and has a short-range order. It includes a crystalline region having a lattice strain. At least in a part of the film, 0.5 to 20 n
The crystal region of m can be observed. When silicon is the main component, the Raman spectrum is 5
It is shifted to the lower wave number side than 20 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. In order to terminate dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more. SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. Examples of the gas containing silicon include SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , and SiHCl.
₃ , SiCl ₄ , SiF ₄ or the like can be used. Further, F ₂ and GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. Dilution rate ranges from 2 to 1000 times,
The pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or less, and 100
It can be formed even at a substrate heating temperature of ˜200 ° C. Here, as an impurity element mainly taken in during film formation, impurities derived from atmospheric components such as oxygen, nitrogen, and carbon are 1 × 10 ²⁰ cm ^−.
The oxygen concentration is desirably ³ or less, and in particular, the oxygen concentration is preferably 5 × 10 ¹⁹ cm ⁻³ or less, more preferably 1 × 10 ¹⁹ cm ⁻³ or less. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. Further, S formed from a fluorine-based gas as a semiconductor layer.
A SAS layer formed from a hydrogen-based gas may be stacked on the AS layer.

When a crystalline semiconductor layer is used for the semiconductor layer, the crystalline semiconductor layer can be manufactured by various methods (laser crystallization, thermal crystallization, or thermal crystallization using an element that promotes crystallization such as nickel. Or the like) may be used. In addition, a microcrystalline semiconductor that is a SAS can be crystallized by laser irradiation to improve crystallinity. In the case where an element for promoting crystallization is not introduced, the amorphous silicon film is heated at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous silicon film with laser light, whereby the concentration of hydrogen contained in the amorphous silicon film is set to 1 ×. Release to 10 ²⁰ atoms / cm ³ or less. This is because the amorphous silicon film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor layer or inside the amorphous semiconductor layer. For example, sputtering, CVD
Methods, plasma treatment methods (including plasma CVD methods), adsorption methods, and metal salt solution coating methods can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor layer and to spread the aqueous solution over the entire surface of the amorphous semiconductor layer, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

The crystallization of the amorphous semiconductor layer may be a combination of heat treatment and crystallization by laser light irradiation.
Heat treatment and laser light irradiation may be performed several times independently. Alternatively, the crystalline semiconductor layer may be directly formed over the substrate by a plasma method.

Alternatively, an organic semiconductor material can be used as a semiconductor, and it can be formed by a printing method, a dispenser method, a spray method, a spin coating method, a droplet discharge method, or the like. In this case, the number of processes can be reduced because the etching process is not necessary. As the organic semiconductor, a low molecular material, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, a soluble polymer material such as polythiophene, polyfluorene, poly (3-alkylthiophene), a polythiophene derivative, or pentacene can be used.

In addition, as an organic semiconductor material that can be used in the present invention, there is a material that can form a semiconductor layer by processing after forming a soluble precursor. Examples of such an organic semiconductor material include polythienylene vinylene, poly (2,5-thienylene vinylene), polyacetylene, a polyacetylene derivative, and polyarylene vinylene.

When converting the precursor into an organic semiconductor, a reaction catalyst such as hydrogen chloride gas is added as well as heat treatment. Typical solvents for dissolving these soluble organic semiconductor materials include toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butyl cellosolve, cyclohexane, NMP (N-methyl-2) -Pyrrolidone), cyclohexanone, 2-butanone, dioxane, dimethylformamide (DMF), THF (tetrahydrofuran), or the like can be applied.

Next, a semiconductor layer 186 having one conductivity type is formed over the semiconductor layer 185a (FIG. 3B).
. The semiconductor layer 186 having one conductivity type functions as a source region and a drain region. Note that a semiconductor film having one conductivity type may be formed as necessary, and an n-type semiconductor film having an n-type impurity element (P, As) or a p-type impurity element (
A p-type semiconductor film having B) can be formed. Further, the semiconductor layer 186 having one conductivity type may be formed by a droplet discharge method in which a droplet of the adjusted composition is discharged from a fine hole to form a layer having a predetermined shape. You may form using a printing method. Also, CV
The semiconductor layer 186 having one conductivity type may be formed by being selectively etched by a photolithography process after being formed over the substrate by a D method, a PVD method, a coating method, or the like.

Next, a wiring 187 is formed over the semiconductor layer 186 having one conductivity type (FIG. 3C). As a method for forming the wiring 187, a conductive paste can be dropped and baked by a droplet discharge method. Moreover, you may form using a printing method. Alternatively, after forming a conductive layer over the substrate by a CVD method, a PVD method, a coating method, or the like, the wiring 187 may be formed by selectively etching the conductive layer through a photolithography process.

The wiring 187 functions as a source electrode layer or a drain electrode layer and is electrically connected to the semiconductor layer 186 having one conductivity type. As a conductive material for forming the wiring 187, a composition mainly composed of metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) is used. Can do. Alternatively, light-transmitting indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

In addition, by using the droplet discharge method, material loss can be prevented and costs can be reduced as compared with the entire surface coating formation by a spin coating method or the like.

Next, an insulating layer 183 is formed over the wiring 187 (FIG. 3D). The material of the insulating layer 183 is not particularly limited as long as it is a light transmitting layer formed of a material that transmits laser light. For example, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), photosensitive or non-photosensitive organic materials (organic resin materials) (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene Etc.), one kind of a low dielectric constant material, etc., or a film comprising a plurality of kinds, or a laminate of these films can be used. A siloxane material may also be used. Further, the surface of the insulating layer 183 may be subjected to a liquid repellent treatment.

Next, an opening 184 is formed in the insulating layer 183 (FIG. 3E). In this embodiment mode, as shown in Embodiment Mode 1, the wiring 187 is irradiated with a femtosecond laser at a desired position.
The opening 184 can be formed at a desired position of the insulating layer 183.

Next, a composition containing a conductive material is discharged into the opening 184 to form the electrode layer 181 (FIGS. 3E and 3F). Forming the electrode layer by selectively discharging the composition has an effect of simplifying the processing step.

Note that the electrode layer 181 may be wiped with a CMP method or a polyvinyl alcohol-based porous body and polished so that the surface thereof is planarized. In addition, after polishing using the CMP method, the electrode layer 18
The surface of 1 may be subjected to ultraviolet irradiation, oxygen plasma treatment, or the like.

Through the above steps, the bottom gate TFT 188 formed on the substrate 100 and the electrode layer 1 are formed.
A semiconductor device connected to the semiconductor device 81 is completed.

In this embodiment, an opening 184 is formed in the insulating layer 183 using a femtosecond laser, and the electrode layer 181 is formed in the opening 184 by a droplet discharge method. In this embodiment mode, since the opening is formed using a femtosecond laser, photolithography is conventionally used to form the opening in the conductive layer and the insulating layer, which require a complicated photolithography process. The opening can be formed in a single process without using a process. In addition, since the electrode layer covering the opening is formed using a droplet discharge method, the electrode layer 181 is in good electrical contact with the wiring 187 under the insulating layer regardless of the shape of the opening. be able to. For example, in the opening 184, the electrode layer 181 is formed in the opening even when the end of the insulating layer 183 is formed inside the end of the wiring 187 (the opening is reversely tapered) or the opening is narrow. Since it is formed by discharging a liquid conductive material, good electrical contact with the wiring 187 can be obtained.

In this embodiment mode, before the insulating layer 183 is irradiated with the femtosecond laser, the insulating layer 1
83 may be subjected to a liquid repellent treatment. When the electrode layer 181 is formed in the opening 184 by performing a liquid repellent treatment on the surface of the insulating layer 183, the liquid conductive material (droplet) is formed in the opening 1.
84, it can be prevented from being deposited on the surface of the insulating layer 183 without entering 84, and the conductive material can flow into the opening 184 with higher accuracy.

By using the method for manufacturing a semiconductor device described in this embodiment, an opening (contact hole) between wirings can be formed without using a complicated photolithography step, and electrical contact between the wirings can be satisfactorily achieved. be able to. Therefore, a high-performance and highly reliable semiconductor device with little material loss can be manufactured with high yield.

(Embodiment 3)
In this embodiment, a method for manufacturing a semiconductor device having a conductive layer connected to a thin film transistor will be described with reference to FIGS. Here, a liquid crystal display panel is formed as the semiconductor device. FIG. 4 is a cross-sectional view of one pixel of the liquid crystal display panel, which will be described below.

As shown in FIG. 4A, a thin film transistor 188 described in Embodiment 2 is formed over a substrate 100,
Then, an insulating layer 190 covering the thin film transistor 188 is formed. Here, the composition is applied by a coating method and baked to form the insulating layer 190 formed of polyimide.

Next, an opening is provided in part of the insulating layer 190 using a femtosecond laser by the method described in Embodiment 1, so that the insulating layer 190 having the opening is formed. Thereafter, oxide formed on the surface of the wiring 187 may be removed.

Next, as illustrated in FIG. 4B, a conductive layer 192 connected to the wiring 187 is formed over the opening and the surface of the insulating layer 190. Note that the conductive layer 192 functions as a pixel electrode and is selectively formed by a droplet discharge method. By forming the light-transmitting conductive layer 192, a transmissive light-emitting display panel can be manufactured later. Further, as the conductive layer 192, Ag (silver), Au (gold)
, Cu (copper)), W (tungsten), Al (aluminum), and the like, a reflective light-emitting display panel can be manufactured later by forming a conductive layer having reflectivity. Furthermore, a transflective display panel can be manufactured by forming the light-transmitting conductive layer and the reflective conductive layer for each pixel.

Note that as illustrated in FIG. 4B, the wiring 187 and the conductive layer 192 are formed on the surface of the wiring 187.
An opening can be formed so as to be in contact with each other.

4C, an opening can be formed so that the semiconductor layer 186 having one conductivity type and the conductive layer 192 are in contact with the surface of the semiconductor layer 186 having one conductivity type.

Through the above steps, an active matrix substrate can be formed.

Next, an insulating film is formed by printing or spin coating, and rubbing is performed to align the alignment film 193.
Is formed (FIG. 4D). Note that the alignment film 193 can also be formed by oblique deposition.

Next, in the counter substrate 261 provided with the alignment film 264, the second pixel electrode (counter electrode) 263, and the coloring layer 262, a closed loop sealing material (illustration is made) by a droplet discharge method in a region around the pixel portion. Not). A filler may be mixed in the sealing material, and a color filter, a shielding film (black matrix), or the like may be formed on the counter substrate 261.

Next, after the liquid crystal material is dropped inside the closed loop formed of the sealing material by a dispenser type (dropping type), the counter substrate and the active matrix substrate are bonded together in a vacuum, and ultraviolet curing is performed, thereby liquid crystal A liquid crystal layer 265 filled with the material is formed. The liquid crystal layer 265
As a method for forming the film, a dip type (pumping type) in which a liquid crystal material is injected by using a capillary phenomenon after the counter substrate is bonded can be used instead of the dispenser type (dropping type).

After that, the wiring board, typically FP, is connected to the connection terminal portion of the scanning line and the signal line through the connection conductive layer.
C (Flexible Print Circuit is pasted. By the above process,
A liquid crystal display panel can be formed.

Note that although a TN liquid crystal panel is described in this embodiment mode, the above process can be similarly applied to other types of liquid crystal panels. For example, the present embodiment can be applied to a horizontal electric field type liquid crystal panel in which an electric field is applied in parallel with a glass substrate to align liquid crystals. Further, the present embodiment can be applied to a VA (Vertical Alignment) liquid crystal panel.

5 and 6 show the pixel structure of the VA liquid crystal panel. FIG. 5 is a plan view, and FIG. 6 shows a cross-sectional structure corresponding to the cutting line I-J shown in the drawing. The following description will be given with reference to both the drawings.

In this pixel structure, a single pixel has a plurality of pixel electrodes, and a TFT is connected to each pixel electrode. Each TFT is configured to be driven by a different gate signal. In other words, a multi-domain designed pixel has a configuration in which signals applied to individual pixel electrodes are controlled independently.

The pixel electrode layer 1624 has an opening (contact hole) 1623 and a wiring layer 1618 TF.
It is connected to T1628. The pixel electrode layer 1626 has an opening (contact hole) 16.
27, the wiring layer 1619 is connected to the TFT 1629. The gate wiring layer 1602 of the TFT 1628 and the gate electrode layer 1603 of the TFT 1629 are separated so that different gate signals can be given. On the other hand, the wiring layer 1616 functioning as a data line.
Are commonly used by the TFT 1628 and the TFT 1629.

The pixel electrode layer 1624 and the pixel electrode layer 1626 are manufactured in a manner similar to that in Embodiment 1 by using a droplet discharge step by two steps. Specifically, the first conductive material is discharged along the contour of the pattern of the pixel electrode layer in the first droplet discharge step, thereby forming a frame-shaped first conductive layer. A composition containing the second conductive material is discharged so as to fill the inside of the frame-shaped first conductive layer, thereby forming the second conductive layer. The first conductive layer and the second conductive layer can be used as continuous pixel electrode layers, and the pixel electrode layers 1624 and 1626 can be formed. In this manner, when the present invention is used, the process can be simplified and material loss can be prevented; thus, a display device can be manufactured at low cost with high productivity.

The pixel electrode layer 1624 and the pixel electrode layer 1626 have different shapes and are separated by a slit 1625. A pixel electrode layer 1626 is formed so as to surround the outside of the V-shaped pixel electrode layer 1624. The timing of the voltage applied to the pixel electrode layer 1624 and the pixel electrode layer 1626 is varied depending on the TFT 1628 and the TFT 1629, thereby controlling the alignment of the liquid crystal. A counter substrate 1601 is provided with a light-blocking film 1632, a coloring layer 1636, and a counter electrode layer 1640. In addition, a planarization film 1637 is formed between the coloring layer 1636 and the counter electrode layer 1640 to prevent alignment disorder of the liquid crystal. FIG. 7 shows a structure on the counter substrate side.
The counter electrode layer 1640 is an electrode shared by different pixels, but the slit 1641
Is formed. The slit 1641, the pixel electrode layer 1624, and the pixel electrode layer 162
By disposing the six-side slits 1625 so as to alternately engage with each other, an oblique electric field can be effectively generated to control the alignment of the liquid crystal. Thereby, the direction in which the liquid crystal is aligned can be varied depending on the location, and the viewing angle is widened.

Thus, a liquid crystal panel can be manufactured using a composite material in which an organic compound and an inorganic compound are combined as the pixel electrode layer. By using such a pixel electrode, it is not necessary to use a transparent conductive film containing indium as a main component, and a bottleneck in terms of raw materials can be eliminated.

This embodiment can be freely combined with the above embodiment modes as appropriate.

Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, it is possible to prevent electrostatic breakdown by manufacturing in the same process as the above TFT and connecting the gate wiring layer of the pixel portion and the drain or source wiring layer of the diode.

By using the manufacturing method of the liquid crystal display panel described in this embodiment, an opening (contact hole) between wirings can be formed without using a complicated photolithography process,
In addition, the electrical contact of the wiring can be satisfactorily taken. Therefore, there is little loss of material,
A high-performance and highly reliable liquid crystal display panel can be manufactured with high yield.

(Embodiment 4)
In this embodiment, a method for manufacturing a semiconductor device having a conductive layer connected to a thin film transistor will be described. Here, a pixel electrode is formed as a conductive layer, and a light-emitting display panel is formed as a semiconductor device. Further, FIG. 8 shows one pixel of the light emitting display panel, which will be described below.

First, as illustrated in FIG. 8A, the thin film transistor 188 described in Embodiment 2 and the insulating layer 191 having an opening which is opened using a femtosecond laser are formed over the substrate 100. To do.

Next, as illustrated in FIG. 8B, a conductive layer 201 connected to the wiring 187 is formed in a manner similar to that of Embodiment 1 or 2. Note that the conductive layer 201 functions as a pixel electrode.

Next, as illustrated in FIG. 8C, an insulating layer 202 which covers an end portion of the conductive layer 201 functioning as a pixel electrode is formed. Such an insulating layer is formed by forming an insulating layer (not shown) over the insulating layer 191 and the conductive layer 201 and irradiating the insulating layer with a femtosecond laser to remove the insulating layer over the conductive layer 201. be able to.

Next, a layer 203 having a light-emitting substance is formed over the exposed portion of the conductive layer 201 and part of the insulating layer 202, and a conductive layer 204 functioning as a pixel electrode is formed thereover. Through the above steps, the light-emitting element 205 including the conductive layer 201, the layer 203 having a light-emitting substance, and the conductive layer 204 can be formed.

Here, the structure of the light-emitting element 205 will be described.

A layer having a light emitting function using an organic compound (hereinafter referred to as a light emitting layer 343) is used for the layer 203 containing a light emitting substance.
It shows. The light emitting element 205 functions as an organic EL element.

Examples of the light-emitting organic compound include 9,10-di (2-naphthyl) anthracene (abbreviation: DNA) and 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA). ), 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin 545T, perylene, rubrene, periflanthene, 2,5,8,11-tetra (Tert-butyl) perylene (abbreviation: TBP), 9,10-diphenylanthracene (abbreviation: DPA), 5,12
-Diphenyltetracene, 4- (dicyanomethylene) -2-methyl-6- [p- (dimethylamino) styryl] -4H-pyran (abbreviation: DCM1), 4- (dicyanomethylene)-
2-Methyl-6- [2- (julolidin-9-yl) ethenyl] -4H-pyran (abbreviation:
DCM2), 4- (dicyanomethylene) -2,6-bis [p- (dimethylamino) styryl] -4H-pyran (abbreviation: BisDCM) and the like. Also, screw [2- (4 ′,
6′-difluorophenyl) pyridinato-N, C ² ] (picolinato) iridium (abbreviation:
FIrpic), bis {2- [3 ′, 5′-bis (trifluoromethyl) phenyl] pyridinato-N, C ² } (picolinato) iridium (abbreviation: Ir (CF ₃ ppy) ₂ (pic
)), Tris (2-phenylpyridinato-N, C ² ) iridium (abbreviation: Ir (ppy))
₃ ), (acetylacetonato) bis (2-phenylpyridinato-N, C ² ) iridium (
Abbreviations: Ir (ppy) ₂ (acac)), (acetylacetonato) bis [2- (2′-thienyl) pyridinato-N, C ³ ] iridium (abbreviation: Ir (thp) ₂ (acac)),
(Acetylacetonato) bis (2-phenylquinolinato-N, C ² ) iridium (abbreviation:
Ir (pq) ₂ (acac)), (acetylacetonato) bis [2- (2′-benzothienyl) pyridinato-N, C ³ ] iridium (abbreviation: Ir (btp) ₂ (acac)), etc. Compounds that can be released can also be used.

As shown in FIG. 9A, a hole injection layer 341 formed of a hole injection material, a hole transport layer 342 formed of a hole transport material, and light emission on the first conductive layer 201. A light-emitting layer 343 formed of an organic compound, an electron transport layer 344 formed of an electron-transport material, a layer 318 containing a light-emitting material formed of an electron injection layer 345 formed of an electron-inject material, and The light-emitting element 205 may be formed using two conductive layers 204.

The hole transporting material includes phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine (abbreviation: Cu
Pc), vanadyl phthalocyanine (abbreviation: VOPc), 4,4 ′, 4 ″ -tris (
N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ′
'-Tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (
Abbreviation: MTDATA), 1,3,5-tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), N, N′-diphenyl-N, N′-bis (3- Methylphenyl) -1,1′-biphenyl-4,4′-diamine (abbreviation: TPD), 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4 '
-Bis {N- [4-di (m-tolyl) amino] phenyl-N-phenylamino} biphenyl (abbreviation: DNTPD), 4,4′-bis [N- (4-biphenylyl) -N-phenylamino] Biphenyl (abbreviation: BBPB), 4,4 ′, 4 ″ -tri (N-carbazolyl) triphenylamine (abbreviation: TCTA), and the like are exemplified, but the invention is not limited thereto. Among the compounds described above, TDATA, MTDATA, m-MTDAB, TP
Aromatic amine compounds typified by D, NPB, DNTPD, BBPB, TCTA, NPB, and the like are easy to generate holes and are a group of compounds suitable as organic compounds. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher.

As the hole injecting material, there is a material obtained by chemically doping a conductive polymer compound in addition to the above hole transporting material. Polyethylenedioxythiophene (abbreviation: PEDOT) doped with polystyrene sulfonic acid (abbreviation: PSS). ) And polyaniline (abbreviation: PAni) can also be used. Also effective are inorganic semiconductor thin films such as molybdenum oxide (MoO _x ), vanadium oxide (VO _x ), nickel oxide (NiO _x ), and ultra-thin films of inorganic insulators such as aluminum oxide (Al ₂ O ₃ ). .

Here, the electron transporting material is tris (8-quinolinolato) aluminum (abbreviation: Alq _3).
), Tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: B
A material made of a metal complex having a quinoline skeleton or a benzoquinoline skeleton such as Alq) can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) A material such as a metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2
-(4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl)-
1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-
tert-butylphenyl) -4-phenyl-5- (4-biphenylyl) -1,2,4-
Triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2,4-triazole (abbreviation: p-E)
tTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: B)
CP) or the like can be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher.

Examples of the electron injection material include alkali metal halides such as LiF and CsF, alkaline earth halides such as CaF ₂ , and alkali metal oxides such as Li ₂ O in addition to the electron transport materials described above. Insulator ultrathin films are often used. In addition, alkali metal complexes such as lithium acetylacetonate (abbreviation: Li (acac) and 8-quinolinolato-lithium (abbreviation: Liq) are also effective. Further, the above-described electron transporting materials, Mg, Li, C
It is also possible to use a material in which a metal having a small work function such as s is mixed by co-evaporation or the like.

9B, the first conductive layer 201, a hole transport layer 346 formed of an organic compound and an inorganic compound having an electron-accepting property with respect to the organic compound, and a light-emitting organic compound are used. A light-emitting layer 343 formed and a layer 318 containing a light-emitting material formed by an electron-transport layer 347 formed of an inorganic compound having an electron-donating property with respect to the light-emitting organic compound;
The light-emitting element 205 may be formed using the conductive layer 204.

The hole-transport layer 346 formed using a light-emitting organic compound and an inorganic compound having an electron-accepting property with respect to the light-emitting organic compound appropriately uses the above-described hole-transport organic compound as the organic compound. Form. The inorganic compound may be anything as long as it can easily receive electrons from an organic compound, and various metal oxides or metal nitrides can be used. Any one of Groups 4 to 12 of the periodic table can be used. These transition metal oxides are preferable because they easily exhibit electron accepting properties. Specific examples include titanium oxide, zirconium oxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide, and zinc oxide. Among the metal oxides described above, any of the transition metal oxides in Groups 4 to 8 of the periodic table has a high electron accepting property and is a preferred group. Vanadium oxide, molybdenum oxide, tungsten oxide, and rhenium oxide are particularly preferable because they can be vacuum-deposited and are easy to handle.

The electron-transport layer 347 formed using a light-emitting organic compound and an inorganic compound having an electron-donating property with respect to the light-emitting organic compound is formed using the above-described electron-transport organic compound as appropriate as the organic compound. In addition, the inorganic compound may be anything as long as it easily gives electrons from an organic compound, and various metal oxides or metal nitrides are possible. Alkali metal oxides, alkaline earth metal oxides, Rare earth metal oxides, alkali metal nitrides, alkaline earth metal nitrides, and rare earth metal nitrides are preferred because they easily exhibit electron donating properties. In particular,
Examples thereof include lithium oxide, strontium oxide, barium oxide, erbium oxide, lithium nitride, magnesium nitride, calcium nitride, yttrium nitride, and lanthanum nitride.
In particular, lithium oxide, barium oxide, lithium nitride, magnesium nitride, and calcium nitride are preferable because they can be vacuum-deposited and are easy to handle.

Electron transport layer 347 or hole transport layer 346 formed of a light-emitting organic compound and an inorganic compound
Since the electron injection / transport characteristics are excellent, various materials can be used for both the first conductive layer 201 and the second conductive layer 204 with almost no work function limitation. In addition, the driving voltage can be reduced.

In addition, the light-emitting element 205 functions as an inorganic EL element by including a layer having a light-emitting function using an inorganic compound (hereinafter referred to as a light-emitting layer 349) as the layer 203 containing a light-emitting substance.
Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has a layer containing a luminescent material in which particles of a luminescent material are dispersed in a binder,
The latter is different in that it has a layer containing a luminescent material made of a thin film of a luminescent material, but is common in that it requires electrons accelerated in a high electric field. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In many cases, dispersion-type inorganic EL emits donor-acceptor recombination light emission, and thin-film inorganic EL element emits localized light emission. The structure of the inorganic EL element is shown below.

A light-emitting material that can be used in this embodiment mode includes a base material and an impurity element that serves as a light-emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

In the solid phase method, a base material and an impurity element or a compound containing an impurity element are weighed and mixed in a mortar.
This is a method in which an impurity element is contained in the base material by reacting by heating and baking in an electric furnace. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for a light-emitting material of an inorganic EL element, sulfide, oxide, or nitride can be used. Examples of sulfides include zinc sulfide (ZnS) and cadmium sulfide (CdS).
, Calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S)
₃ ), strontium sulfide (SrS), barium sulfide (BaS), or the like can be used. Examples of the oxide include zinc oxide (ZnO) and yttrium oxide (Y ₂ O ₃ ).
Etc. can be used. Moreover, as nitride, for example, aluminum nitride (AlN)
Gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), and the like can also be used, such as calcium sulfide-gallium sulfide (CaGa ₂ S ₄ ), strontium sulfide-gallium (SrGa ₂ S).
₄ ) or a ternary mixed crystal such as barium sulfide-gallium sulfide (BaGa ₂ S ₄ ).

As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

On the other hand, as a light emission center of donor-acceptor recombination light emission, a first donor level is formed.
And a light-emitting material including a second impurity element which forms an acceptor level. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. As the second impurity element, for example, copper (Cu),
Silver (Ag) or the like can be used.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element
Each of the compounds containing the impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) etc. can be used. Examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), and copper sulfide (Cu ₂ S).
), Silver sulfide (Ag ₂ S), and the like can be used. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound including the first impurity element and the second impurity element, for example, copper chloride (CuCl), silver chloride (AgCl), or the like can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

FIG. 9C illustrates a cross section of an inorganic EL element in which the layer 203 containing a light-emitting substance includes a first insulating layer, a light-emitting layer 349, and a second insulating layer 350.

In the case of a thin-film inorganic EL, the light emitting layer 349 is a layer containing the above light emitting material, and is a physical vapor deposition method (such as a resistance heating vapor deposition method, a vacuum vapor deposition method such as an electron beam vapor deposition (EB vapor deposition) method) Chemical vapor deposition (C) such as PVD), metal organic chemical vapor deposition, hydride transport low pressure CVD
VD), atomic epitaxy (ALE), or the like.

The first insulating layer 348 and the second insulating layer 350 are not particularly limited. However, the first insulating layer 348 and the second insulating layer 350 have high insulation resistance, preferably have a dense film quality, and preferably have a high dielectric constant. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ )
_2), aluminum oxide (Al2O _3), hafnium oxide _(HfO 2), tantalum oxide (
Ta ₂ O ₅ ), barium titanate (BaTiO ₃ ), strontium titanate (SrTi)
O ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., a mixed film thereof, or a laminate of two or more kinds can be used. The first insulating layer 348 and the second insulating layer 350 can be formed by sputtering, vapor deposition, CVD, or the like. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. Note that the light-emitting element of this embodiment mode does not necessarily require hot electrons, and thus can be formed into a thin film and has an advantage that a driving voltage can be reduced. Preferably 50
The film thickness is preferably 0 nm or less, more preferably 100 nm or less.

Note that although not illustrated, a buffer layer may be provided between the light-emitting layer 349 and the insulating layers 348 and 350 or between the light-emitting layer 349 and the conductive layers 201 and 319. This buffer layer has a role of facilitating carrier injection and suppressing mixing of both layers. Although it does not specifically limit as a buffer layer, For example, it is ZnS, ZnSe, ZnTe, CdS, S which are the base materials of a light emitting layer.
rS, BaS, etc., or CuS, Cu ₂ S, or LiF or CaF which is an alkali halide
₂ , BaF ₂ , MgF ₂ or the like can be used.

In addition, as illustrated in FIG. 9D, the layer 203 containing a light-emitting substance may be formed using a light-emitting layer 349 and a first insulating layer 348. In this case, FIG. 9D illustrates a mode in which the first insulating layer 348 is provided between the second conductive layer 204 and the light-emitting layer 349. Note that the first insulating layer 348 may be provided between the first conductive layer 201 and the light-emitting layer 349.

Further, the layer 203 containing a light-emitting substance may be formed using only the light-emitting layer 349. That is, the light-emitting element 205 may be formed using the first conductive layer 201, the layer 203 containing a light-emitting substance, and the second conductive layer 204.

In the case of a dispersion type inorganic EL, a particulate luminescent material is dispersed in a binder to form a layer containing a film-like luminescent substance. Process into particles. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. The binder is a substance for fixing a granular light emitting material in a dispersed state and holding it in a shape as a layer containing a light emitting substance. The light emitting material is uniformly dispersed and fixed in the layer containing the light emitting substance by the binder.

In the case of a dispersion-type inorganic EL, a method for forming a layer containing a light-emitting substance includes a droplet discharge method that can selectively form a layer containing a light-emitting substance, a printing method (such as screen printing or offset printing), and a spin coating method. An application method, a dipping method, a dispenser method, or the like can also be used. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the layer containing the light-emitting material and the light-emitting substance including the binder, the ratio of the light-emitting material is 50 wt% or more and 8
It may be 0 wt% or less.

The element in FIG. 9E includes a first conductive layer 201, a layer 203 containing a light-emitting substance, and a second conductive layer 204. In the layer 203 containing a light-emitting substance, a light-emitting material 352 is dispersed in a binder 351. A light emitting layer and an insulating layer 348. Note that the insulating layer 348 has a structure in contact with the second conductive layer 204 in FIG. 9E, but may have a structure in contact with the first conductive layer 201. The element may include an insulating layer in contact with each of the first conductive layer 201 and the second conductive layer 204. Further, the element includes a first conductive layer 201 and a second conductive layer 204.
It is not necessary to have an insulating layer in contact with.

As a binder that can be used in this embodiment, an insulating material such as an organic material or an inorganic material can be used. Further, a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. Moreover, a photocuring type etc. can be used. To these resins,
The dielectric constant can be adjusted by appropriately mixing fine particles having a high dielectric constant such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ).

As the inorganic insulating material used for the binder, silicon oxide (SiO _x ), silicon nitride (Si
N _x), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum or aluminum oxide containing oxygen and nitrogen _{(Al 2 O} 3), titanium oxide _(TiO 2), BaTi
O ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KNbO ₃ ),
Lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate (Ba
Ta ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y ₂ O ₃ ),
It can be formed of a material selected from substances including zirconium oxide (ZrO ₂ ), ZnS, and other inorganic insulating materials. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the layer containing the light emitting material including the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. Can do.

In the manufacturing process, the light-emitting material is dispersed in a solution containing a binder, but as a solvent for the solution containing the binder that can be used in this embodiment mode, a method of forming a light-emitting layer by dissolving the binder material (various wet types) A solvent capable of producing a solution having a viscosity suitable for the process) and a desired film thickness may be appropriately selected. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB) can be used. Etc. can be used.

Inorganic EL light-emitting elements can emit light by applying a voltage between a pair of electrodes sandwiching a layer containing a light-emitting substance, but can operate in either DC driving or AC driving.

Here, as a light-emitting element that displays red, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. As the light emitting layer, DN
TPD 50 nm, NPB 10 nm, bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (acetylacetonate) (abbreviation: Ir (Fdpq) ₂ (ac
ac)) is 30nm to NPB, which is added, 30nm of Alq _3, 30nm and Alq _3, and LiF and formed by 1nm laminated. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

As a light-emitting element that displays green, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. In addition, as a light emitting layer, DNTP
Alq with D = 50 nm, NPB = 10 nm, and Coumarin 545T (C545T) added
₃ is formed by laminating 40 nm, Alq ₃ by 30 nm, and LiF by 1 nm. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

As a light-emitting element that displays blue, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. In addition, as a light emitting layer, DNTP
9- [4- (N-carbazolyl)] phenyl-10 to which D is 50 nm, NPB is 10 nm, and 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP) is added.
- phenyl anthracene (abbreviation: CzPA 30 nm to :), 30 nm and Alq _3, and L
iF is formed by laminating 1 nm. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

Next, a protective film is preferably formed over the conductive layer 204.

After that, the wiring board, typically FP, is connected to the connection terminal portion of the scanning line and the signal line through the connection conductive layer.
C (Flexible Print Circuit is pasted. By the above process,
A light-emitting display panel can be formed.

Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion.

Here, in the light-emitting display panel having the light-emitting elements shown in FIGS.
A case of radiating toward 00 side, that is, a case of performing downward radiation will be described with reference to FIG. In this case, the conductive layer 484 having a light-transmitting property, the layer 485 containing a light-emitting substance, a light-blocking property or a reflective property are in contact with the wiring 187 functioning as a source electrode layer or a drain electrode so as to be electrically connected to the thin film transistor 188. A conductive layer 486 having layers is stacked in order. The substrate 100 through which light is transmitted needs to be transparent to at least light in the visible region.

Next, in the case of radiating to the side opposite to the substrate 100, that is, in the case of emitting upward, FIG.
A description will be given using (B). The thin film transistor 188 can be formed in a manner similar to that of the thin film transistor described above. A wiring 187 functioning as a source electrode layer or a drain electrode electrically connected to the thin film transistor 188 is in contact with and electrically connected to the conductive layer 463 having a light-blocking property or a reflective property. A light-blocking or reflective conductive layer 463 and a layer 4 containing a light-emitting substance
64, a light-transmitting conductive layer 465 is sequentially stacked. The conductive layer 463 is a light-blocking or reflective metal layer, and reflects light emitted from the light-emitting element to the upper surface of the arrow. Note that a light-transmitting conductive layer may be formed over the light-blocking or reflective conductive layer 463. Since light emitted from the light-emitting element is emitted through the second conductive layer 465, the light-transmitting conductive layer 465 is formed using a light-transmitting material at least in the visible region.

Next, the case where light is emitted to both sides of the substrate 100 and the opposite side, that is, the case where both are emitted will be described with reference to FIG. A conductive layer 472 having a first light-transmitting property is electrically connected to a wiring 187 functioning as a source electrode layer or a drain electrode which is electrically connected to the semiconductor layer of the thin film transistor 188. A conductive layer 472 having a first light-transmitting property, a layer 473 containing a light-emitting substance, and a conductive layer 474 having a second light-transmitting property are sequentially stacked. At this time,
When both the conductive layer 472 having the first light-transmitting property and the conductive layer 474 having the second light-transmitting property are formed with a light-transmitting material or a thickness that can transmit light at least in the visible region, Is realized. In this case, the insulating layer that transmits light and the substrate 100 also need to have a light-transmitting property with respect to at least light in the visible region.

Here, a pixel circuit of a light-emitting display panel including the light-emitting elements illustrated in FIGS. 9A and 9B and an operation structure thereof will be described with reference to FIGS. There are two types of operation configurations of the light-emitting display panel, in which a video signal input to a pixel is defined by voltage and a current is defined by current in a display device in which a video signal is digital. There are two types of video signals defined by voltage, one having a constant voltage applied to the light emitting element (CVCV) and one having a constant current applied to the light emitting element (CVCC). In addition, a video signal is defined by current, there are a constant voltage applied to the light emitting element (CCCV) and a constant current applied to the light emitting element (CCCC). In this embodiment, the pixel performing the CVCV operation is shown in FIG.
) And (B). A pixel that performs the CVCC operation will be described with reference to FIG.

In the pixel shown in FIGS. 11A and 11B, a signal line 3710 and a power supply line 3711 are arranged in the column direction, and a scanning line 3714 is arranged in the row direction. Also, switching TFT 3701, driving TF
T3703, a capacitor 3702, and a light-emitting element 3705 are included.

Note that the switching TFT 3701 and the driving TFT 3703 operate in a linear region when turned on. The driving TFT 3703 has a role of controlling whether or not a voltage is applied to the light emitting element 3705. Both TFTs preferably have the same conductivity type in terms of manufacturing process. The driving TFT 3703 may be a depletion type TFT as well as an enhancement type. Further, the channel width W, channel and length L of the driving TFT 3703
The ratio (W / L) is preferably 1 to 1000, depending on the mobility of the TFT. W /
The larger L is, the better the electrical characteristics of the TFT.

In the pixel shown in FIGS. 11A and 11B, the switching TFT 3701 controls input of a video signal to the pixel. When the switching TFT 3701 is turned on, the video signal is input into the pixel. Then, the voltage of the video signal is held in the capacitor 3702.

In FIG. 11A, the power supply line 3711 is Vss and the counter electrode of the light emitting element 3705 is Vdd.
In this case, the counter electrode of the light emitting element is an anode, and the electrode connected to the driving TFT 3703 is a cathode. In this case, luminance unevenness due to characteristic variations of the driving TFT 3703 can be suppressed.

In FIG. 11A, the power supply line 3711 is Vdd and the counter electrode of the light emitting element 3705 is Vss.
In this case, the counter electrode of the light emitting element is a cathode, and the electrode connected to the driving TFT 3703 is an anode. In this case, when a video signal having a voltage higher than Vdd is input to the signal line 3710, the voltage of the video signal is held in the capacitor 3702, and the driving TFT 3703 operates in a linear region. It is possible to improve.

The pixel shown in FIG. 11B has the same pixel structure as that shown in FIG. 11A except that a TFT 3706 and a scanning line 3715 are added.

The TFT 3706 is controlled to be turned on or off by a newly arranged scanning line 3715.
When the TFT 3706 is turned on, the electric charge held in the capacitor 3702 is discharged, and the driving T
FT 3703 is turned off. In other words, the light emitting element 3 is forcibly arranged by the arrangement of the TFT 3706.
A state in which no current flows through 705 can be created. For this reason, the TFT 3706 is used for erasing T.
It can be called FT. Accordingly, the structure in FIG. 11B can improve the light emission duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all the pixels. Is possible.

In the pixel having the above operation configuration, the current value of the light-emitting element 3705 can be determined by the driving TFT 3703 that operates in a linear region. With the above structure, variation in TFT characteristics can be suppressed, and luminance unevenness of a light-emitting element due to variation in TFT characteristics can be improved, so that a display device with improved image quality can be provided.

Next, a pixel that performs the CVCC operation will be described with reference to FIG. In the pixel illustrated in FIG. 11C, a power supply line 3712 and a current control TFT 3704 are provided in the pixel configuration illustrated in FIG. Note that in the pixel illustrated in FIG. 11C, the gate electrode of the driving TFT 3703 may be connected to the power supply line 3712 arranged in the row direction with the power supply line 3712 arranged in the column direction.

Note that the switching TFT 3701 operates in a linear region, and the driving TFT 3703 operates in a saturation region. The driving TFT 3703 has a role of controlling a current value flowing through the light emitting element 3705, and the current controlling TFT 3704 has a role of operating in a saturation region and controlling supply of current to the light emitting element 3705.

Note that the CVCC operation can be performed even in the pixels shown in FIGS. In addition, in the pixel having the operation configuration illustrated in FIG. 11C, Vdd and Vss can be changed as appropriate depending on the direction in which the current of the light-emitting element flows, as in FIGS. 11A and 11B. .

In the pixel having the above structure, since the current control TFT 3704 operates in a linear region, a slight change in Vgs of the current control TFT 3704 does not affect the current value of the light emitting element 3705. That is, the current value of the light emitting element 3705 is the driving TFT 370 operating in the saturation region.
3 can be determined. With the above structure, it is possible to provide a display device in which luminance unevenness of a light-emitting element due to variation in TFT characteristics is improved and image quality is improved.

In particular, in the case of forming a thin film transistor having an amorphous semiconductor or the like, it is preferable to increase the area of the semiconductor film of the driving TFT because the variation of the TFT can be reduced. In addition, the pixel shown in FIGS. 11A and 11B can increase the aperture ratio because the number of TFTs is small.

Note that although a structure including the capacitor 3702 is shown, the present invention is not limited to this, and the capacitor 370 can be used when a capacitor for holding a video signal can be covered by a gate capacitor or the like.
2 may not be provided.

In addition, when the semiconductor layer of the thin film transistor is formed using an amorphous semiconductor film, a threshold value is likely to shift. Therefore, a circuit for correcting the threshold value is preferably provided in or around the pixel.

Such an active matrix light-emitting device has a TF for each pixel when the pixel density increases.
Since T is provided, it can be driven at a low voltage, which is considered advantageous. On the other hand, a passive matrix light-emitting device can also be formed. Passive matrix light emitting devices
Since each pixel is not provided with a TFT, the aperture ratio is high.

In the display device of the present invention, the screen display driving method is not particularly limited. For example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the display device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

As described above, various pixel circuits can be employed.

By using the method for manufacturing the light-emitting display panel described in this embodiment, an opening (contact hole) between wirings can be formed without using a complicated photolithography process.
In addition, the electrical contact of the wiring can be satisfactorily taken. Therefore, there is little loss of material,
A high-performance and highly reliable light-emitting display panel can be manufactured with high yield.

(Embodiment 5)
In this embodiment, a typical example of a semiconductor device will be described with reference to FIGS. An electrophoretic element is a microcapsule in which a positive and negative charged black and white particle is confined between a first conductive layer and a second conductive layer. This is an element that performs display by causing a potential difference in the second conductive layer to move black and white particles between electrodes.

As illustrated in FIG. 12, the thin film transistor 188 described in Embodiment 2 and the insulating layer 191 having an opening formed using a femtosecond laser are formed over the substrate 100.

Next, a first conductive layer 1181 connected to the wiring 187 is formed. The first conductive layer 11
Reference numeral 81 functions as a pixel electrode. Here, the first conductive layer 1181 is formed selectively using aluminum by a droplet discharge method.

In addition, a second conductive layer 1173 is formed over the substrate 1172. The second conductive layer 1173 is also preferably formed in parallel. Here, the second conductive layer 1173 is formed using zinc oxide.

Next, the substrate 100 and the substrate 1172 are attached to each other with a sealant. At this time, the microcapsules 1170 are dispersed between the first conductive layer 1181 and the second conductive layer 1173, so that an electrophoretic element is formed between the substrate 100 and the substrate 1172. The substrate 100 and the substrate 1172 are attached to each other with a sealant so that the first conductive layer 11811 and the second conductive layer 1173 intersect. The electrophoretic element includes a first conductive layer 1181 and a microcapsule 11.
70 and the second conductive layer 1173. The microcapsule 1170 is fixed between the first conductive layer 11811 and the second conductive layer 1173 with a binder.

Next, the structure of the microcapsule will be described with reference to FIG. 13A and 13B
As shown in FIG. 2, the microcapsule 1170 has a transparent dispersion medium 1 in a fine transparent container 1174.
176 and charged black particles 1175a and white particles 1175b are dispersed. Instead of the black particles 1175a, blue particles, red particles, green particles, yellow particles, blue green particles, and red purple particles may be used. Further, as shown in FIGS. 13C and 13D, a microcapsule 1330 in which a colored dispersion medium 1333 and white particles 1332 are dispersed in a fine transparent container 1331 may be used. Note that the colored dispersion medium 1333 is colored in any one of black, blue, red, green, yellow, blue-green, and magenta. Further, by providing each pixel with microcapsules in which blue particles, red particles, and green particles are dispersed, color display can be performed. In addition, by providing microcapsules in which yellow particles, blue-green particles, and red-violet particles are dispersed, color display can be performed. Further, color display can be performed by arranging microcapsules having blue, red, and green dispersion media in one pixel.
In addition, color display can be performed by arranging microcapsules having yellow, blue-green, and magenta dispersion media in one pixel.

Next, a display method using an electrophoretic element will be described. Specifically, a display method of the microcapsule 1170 having two-color particles is described with reference to FIGS. Here, a microcapsule using white particles and black particles as two-color particles and having a transparent dispersion medium is shown. Note that particles of other colors may be used instead of the black particles of the two colors.

In the microcapsule 1170, the black particles 1175a are positively charged, the white particles 1175b are negatively charged, and the first conductive layer 1171 is charged.
An electric field is applied to the second conductive layer 1173. Here, when an electric field is applied in the direction from the second conductive layer to the first conductive layer, as shown in FIG. 13A, the black particles 1175a migrate to the second conductive layer 1173 side, and the first White particles 1175b migrate to one conductive layer 1171 side.
As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

On the other hand, when an electric field is applied in the direction from the first conductive layer 1171 to the second conductive layer 1173, the black particles 1175a migrate to the first conductive layer 1171 side as shown in FIG. Second
The white particles 1175b migrate to the conductive layer 1173 side. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

Next, a display method of the microcapsule 1330 including white particles and a colored dispersion medium is described. Here, an example in which the dispersion medium is colored in black is shown, but the same applies even when a dispersion medium colored in another color is used.

In the microcapsule 1330, the white particles 1332 are negatively charged, and an electric field is applied to the first conductive layer 1171 and the second conductive layer 1173. Here, when an electric field is applied from the second conductive layer toward the first conductive layer, as shown in FIG.
White particles 1175b migrate to the first conductive layer 1171 side. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

On the other hand, when an electric field is applied in the direction from the first conductive layer to the second conductive layer, white particles 1175b migrate to the second conductive layer 1173 side as shown in FIG. When the microcapsule is viewed from the first conductive layer 1171 side, the microcapsule is observed as white, and the second conductive layer 1
When viewed from the 173 side, it is observed as black.

Here, the electrophoretic element has been described, but a display device using a twisting ball display method may be used instead. In the twisting ball display method, spherical particles that are separately painted in white and black are arranged between the first conductive layer and the second conductive layer, and a potential difference is generated between the first conductive layer and the second conductive layer. In this method, display is performed by controlling the orientation of the spherical particles.

Further, instead of a thin film transistor, MIM (Metal-In) is used as a switching element.
Sulator-Metal), a diode, or the like can also be used.

A display device having an electrophoretic element or a display device using a twisting ball display system maintains the same state as when an electric field is applied for a long time after the field effect transistor is removed. Therefore,
The display state can be maintained even when the power is turned off. For this reason, low power consumption is possible.

Through the above steps, a semiconductor device including an electrophoretic element can be manufactured.

By using the method for manufacturing a semiconductor device including an electrophoretic element described in this embodiment, an opening (contact hole) between wirings can be formed without using a complicated photolithography process, and electrical wiring can be electrically connected. Good contact can be made. Thus, a semiconductor device including a high-performance and highly reliable electrophoretic element with little material loss can be manufactured with high yield.

(Embodiment 6)
In a display panel (an EL display panel, a liquid crystal display panel, or an electrophoretic display panel) manufactured according to Embodiments 3 to 5, a semiconductor layer is formed using an amorphous semiconductor or SAS, and a driver circuit on the scanning line side is used as a substrate The example formed above is shown.

FIG. 14 shows a block diagram of a scanning line side driving circuit constituted by an n-channel TFT using SAS that can obtain a field effect mobility of 1 to 15 cm ² / V · sec.

In FIG. 14, a block denoted by reference numeral 8500 corresponds to a pulse output circuit that outputs a sampling pulse for one stage, and the shift register includes n pulse output circuits. 8501
Is a buffer circuit to which a pixel 8502 is connected.

FIG. 15 shows a specific structure of the pulse output circuit 8500, and the circuit is composed of n-channel TFTs 8601 to 8612. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 8 μm, the channel width can be set in the range of 10 to 80 μm.

A specific structure of the buffer circuit 8501 is shown in FIG. Similarly, the buffer circuit includes n-channel TFTs 8620 to 8635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 10 μm, the channel width is set in the range of 10 to 1800 μm.

In order to realize such a circuit, it is necessary to connect the TFTs by wiring.

As described above, a driver circuit can be incorporated in the display panel.

Next, mounting of a driver circuit on the display panel described in the above embodiment will be described with reference to FIGS.

As shown in FIG. 17A, a source line driver circuit 1702 and gate line driver circuits 1703a and 1703b are mounted around the pixel portion 1701. In FIG. 17A, as a source line driver circuit 1702 and gate line driver circuits 1703a and 1703b, a mounting method using a known anisotropic conductive adhesive and an anisotropic conductive film, a COG method, wire bonding The IC chip 17 is formed on the substrate 1700 by a method and a reflow process using a solder bump.
05 is implemented. Here, the COG method is used. Then, the IC chip and an external circuit are connected through an FPC (flexible printed circuit) 1706.

Note that a part of the source line driver circuit 1702, for example, an analog switch may be formed over the substrate, and the other part may be separately mounted using an IC chip.

As shown in FIG. 17B, when a TFT is formed using a SAS or a crystalline semiconductor, the pixel portion 1701, gate line driver circuits 1703a and 1703b, and the like are formed over the substrate, and the source line driver circuit 1702 and the like are formed. It may be mounted as an IC chip separately. In FIG. 17B,
As the source line driver circuit 1702, the IC chip 17 is formed on the substrate 1700 by the COG method.
05 is implemented. Then, the IC chip and an external circuit are connected via the FPC 1706.

Note that a part of the source line driver circuit 1702, for example, an analog switch may be formed over the substrate, and the other part may be separately mounted using an IC chip.

Further, as shown in FIG. 17C, a source line driver circuit 1702 and the like may be mounted by a TAB method instead of the COG method. Then, the IC chip and an external circuit are connected via the FPC 1706. Although the source line driver circuit is mounted by a TAB method in FIG. 17C, the gate line driver circuit may be mounted by a TAB method.

When the IC chip is mounted by the TAB method, a pixel portion can be provided larger than the substrate, and a narrow frame can be achieved.

The IC chip is formed using a silicon wafer, but an IC (hereinafter referred to as a driver IC) in which a circuit is formed on a glass substrate may be provided instead of the IC chip. Since an IC chip is taken out from a circular silicon wafer, the shape of the base substrate is limited. On the other hand, the driver IC has a mother substrate made of glass and has no restriction in shape, so that productivity can be improved. Therefore, the shape of the driver IC can be set freely. For example, when the length of the long side of the driver IC is 15 to 80 mm, the required number can be reduced as compared with the case where the IC chip is mounted. As a result, the number of connection terminals can be reduced, and the manufacturing yield can be improved.

The driver IC can be formed using a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiation with a continuous wave laser beam or a pulse laser with a frequency of 10 MHz or more. A semiconductor film obtained by irradiation with a continuous wave laser beam has few crystal defects and large crystal grains. As a result, a transistor having such a semiconductor film has favorable mobility and response speed, can be driven at high speed, and is suitable for a driver IC.

Next, a module having the display panel shown in the above embodiment will be described with reference to FIG. FIG. 18 shows a module in which a display panel 9801 and a circuit board 9802 are combined. On the circuit board 9802, for example, a control circuit 9804, a signal dividing circuit 9805, and the like are formed. In addition, the display panel 9801 and the circuit board 9802 are connected by a connection wiring 9803. As shown in Embodiments 1 to 3 on the display panel 9801,
A liquid crystal display panel, a light-emitting display panel, an electrophoretic display panel, or the like can be used as appropriate.

This display panel 9801 includes a pixel portion 9806 in which a light-emitting element is provided in each pixel, a scanning line driver circuit 9807, and a signal line driver circuit 9808 that supplies a video signal to a selected pixel. The structure of the pixel portion 9806 is similar to that in Embodiment Modes 3 to 5. The scanning line driver circuit 9807 and the signal line driver circuit 9808 are a mounting method using an anisotropic conductive adhesive and an anisotropic conductive film, a COG method, a wire bonding method, a reflow process using a solder bump, and the like. The scanning line driving circuit 9807 formed with an IC chip on the substrate by the method of
A signal line driver circuit 9808 is mounted.

According to this embodiment, a module having a display panel can be formed with high yield.

(Embodiment 7)
As electronic devices each including the semiconductor device described in the above embodiment and the present invention, a television device (also simply referred to as a television or a television receiver), a digital camera, a digital video camera,
Recording media such as mobile phone devices (simply called mobile phones and mobile phones), personal digital assistants such as PDAs, portable game machines, computer monitors, computers, sound reproduction devices such as car audio, and home game machines And an image reproducing apparatus provided. A specific example will be described with reference to FIG.

A portable information terminal illustrated in FIG. 19A includes a main body 9201, a display portion 9202, and the like. By applying the display portion 9202 to the one described in the above embodiment, a high-performance portable information terminal can be easily manufactured.

A digital video camera shown in FIG. 19B includes a display portion 9701, a display portion 9702, and the like. By applying the display portion 9701 to any of the above embodiments, a high-performance digital video camera can be easily manufactured.

A portable terminal illustrated in FIG. 19C includes a main body 9101, a display portion 9102, and the like. By applying the display portion 9102 to any of the above embodiments, a high-performance portable terminal can be easily manufactured.

A portable television device shown in FIG. 19D includes a main body 9301, a display portion 9302, and the like. By applying the display portion 9302 to the one described in the above embodiment, a high-performance portable television device can be easily manufactured. Such a television device can be widely applied from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). .

A portable computer shown in FIG. 19E includes a main body 9401, a display portion 9402, and the like. By applying the display portion 9402 to any of the above embodiments, a high-performance portable computer can be easily manufactured.

A television set illustrated in FIG. 19F includes a main body 9601, a display portion 9602, and the like. By applying the display portion 9602 to the display portion 9602, a high-performance television device can be easily manufactured.

Here, a configuration of the television device will be described with reference to FIG.

FIG. 20 is a block diagram illustrating a main configuration of a television device. A tuner 9511 receives a video signal and an audio signal. The video signal includes a video detection circuit 9512, a video signal processing circuit 9513 that converts a signal output from the video detection circuit 9512 into a color signal corresponding to each color of red, green, and blue,
The video signal is processed by a control circuit 9514 for converting the input signal into the input specification of the driver IC. The control circuit 9514 is a scanning line driving circuit 95 of the display panel 9515.
16 and the signal line driver circuit 9517 respectively. When driving digitally,
A signal dividing circuit 9518 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

Note that the TFT described in any of the above embodiments can be used for each circuit included in the television device. The TFT described in any of the above embodiments can form an opening (contact hole) between wirings without using a complicated photolithography process by using a femtosecond laser, and can have excellent electrical contact between the wirings. be able to. Therefore, a high-performance and highly reliable television device with low material loss can be manufactured with high yield.

In FIG. 20, among the signals received by the tuner 9511, the audio signal is the audio detection circuit 95.
21, and the output is supplied to the speaker 9523 through the audio signal processing circuit 9522. The control circuit 9524 receives control information on the receiving station (reception frequency) and volume from the input unit 9525 and sends a signal to the tuner 9511 and the audio signal processing circuit 9522.

This television device includes the display panel 9515, whereby low power consumption of the television device can be achieved.

Note that the present invention is not limited to a television receiver, and is applicable to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

720 Substrate 721 Conductive layer 722 Light transmission layer 724 Conductive material 725 Opening 726 Conductive layer

Claims (23)

Forming a first conductive layer on the substrate;
Forming an insulating layer on the first conductive layer;
By irradiating with a laser, an opening is formed in the first conductive layer and the insulating layer,
A method for manufacturing a semiconductor device, wherein a composition containing a conductive material is discharged into the opening to form a second conductive layer that is electrically connected to the first conductive layer. In claim 1,
A method for manufacturing a semiconductor device, wherein an end portion of the insulating layer is formed inside the opening portion from an end portion of the first conductive layer. In claim 1 or claim 2,
A method for manufacturing a semiconductor device, wherein a liquid repellent treatment is performed on a surface of the insulating layer before the laser irradiation. In any one of Claim 1 thru | or 3,
The method for manufacturing a semiconductor device, wherein the insulating layer has a light-transmitting property. In any one of Claims 1 thru | or 4,
The method for manufacturing a semiconductor device, wherein the laser is a femtosecond laser. In claim 5,
The femtosecond laser is formed of any one of Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ , with Nd, Yb, Cr, Ti, A method for manufacturing a semiconductor device, which is a laser to which a dopant of either Ho or Er is added. Forming a first thin film transistor and a second thin film transistor on a substrate;
Forming a first wiring on the first thin film transistor;
Forming a second wiring on the second thin film transistor;
Forming an insulating layer on the first wiring and the second wiring;
By irradiating with a laser, a first opening is formed in the first wiring and the insulating layer, and a second opening is formed in the second wiring and the insulating layer,
A composition containing a conductive material is discharged into the first opening and the second opening, and the first pixel electrode is discharged to the first opening and the second pixel is discharged to the second opening. Forming electrodes,
The first pixel electrode is electrically connected to the first thin film transistor through the first wiring;
The second pixel electrode is electrically connected to the second thin film transistor through the second wiring;
A method for manufacturing a display device, wherein the first pixel electrode and the second pixel electrode control alignment of liquid crystal. In claim 7,
Forming an end portion of the insulating layer in the first opening portion inside an end portion of the first wiring;
A method for manufacturing a display device, wherein an end portion of the insulating layer in the second opening is formed inside an end portion of the second wiring. In claim 7 or claim 8,
The method for manufacturing a display device, wherein the first pixel electrode and the second pixel electrode are separated by a slit. Forming a gate electrode layer on the substrate;
Forming a gate insulating layer on the gate electrode layer;
Forming a first semiconductor layer on the gate insulating layer;
Forming a second semiconductor layer having one conductivity type on the first semiconductor layer;
Forming a wiring electrically connected to the second semiconductor layer on the second semiconductor layer;
Forming an insulating layer on the wiring;
By irradiating with a laser, an opening is formed in the wiring and the insulating layer,
A method for manufacturing a display device, wherein an electrode layer electrically connected to the wiring is formed by discharging a composition containing a conductive material into the opening. A thin film transistor is formed on the substrate,
Forming a wiring on the thin film transistor;
Forming an insulating layer on the wiring;
By irradiating with a laser, an opening is formed in the wiring and the insulating layer,
Discharging a composition containing a conductive material in the opening to form a pixel electrode electrically connected to the thin film transistor through the wiring;
A microcapsule is provided on the pixel electrode,
A method for manufacturing a display device, comprising forming a conductive layer over the microcapsule. In claim 10 or claim 11,
A method for manufacturing a display device, wherein an end portion of the insulating layer in the opening is formed inside an end portion of the wiring. In any one of Claims 7 to 12,
A method for manufacturing a display device, wherein a liquid repellent treatment is performed on a surface of the insulating layer before the laser irradiation. In any one of Claims 7 thru | or 13,
The method for manufacturing a display device, wherein the insulating layer has a light-transmitting property. In any one of Claims 7 thru | or 14,
The method for manufacturing a display device, wherein the laser is a femtosecond laser. In claim 15,
The femtosecond laser is formed of any one of Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ , with Nd, Yb, Cr, Ti A method for manufacturing a display device, which is a laser to which a dopant of any one of H, Ho, and Er is added. A thin film transistor is formed on the substrate,
Forming a wiring on the thin film transistor;
Forming a first insulating layer on the wiring;
By irradiating the first laser, an opening is formed in the wiring and the first insulating layer,
A composition containing a conductive material is discharged into the opening to form a pixel electrode that is electrically connected to the thin film transistor through the wiring.
Forming a second insulating layer on the pixel electrode;
By irradiating the second laser, the pixel electrode is exposed,
Forming a layer having a light emitting material on a part of the exposed portion of the pixel electrode and the second insulating layer;
A manufacturing method of a display device, wherein a conductive layer is formed over the layer including the light-emitting substance. In claim 17,
A manufacturing method of a display device, wherein an end portion of the first insulating layer in the opening is formed inside an end portion of the wiring. In claim 17 or claim 18,
A method for manufacturing a display device, wherein a liquid repellent treatment is performed on a surface of the second insulating layer before the first laser irradiation. In any one of Claims 17-19,
A method for manufacturing a display device, wherein a liquid repellent treatment is performed on a surface of the second insulating layer before the second laser irradiation. In any one of claims 17 to 20,
A method for manufacturing a display device, wherein at least one of the first insulating layer and the second insulating layer has a light-transmitting property. In any one of Claims 17 to 21,
A method for manufacturing a display device, wherein at least one of the first laser and the second laser is a femtosecond laser. In claim 22,
The femtosecond laser is formed of any one of Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ , with Nd, Yb, Cr, Ti A method for manufacturing a display device, which is a laser to which a dopant of any one of H, Ho, and Er is added.

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