JP2012109303A - Electric circuit device - Google Patents

Electric circuit device Download PDF

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JP2012109303A
JP2012109303A JP2010254966A JP2010254966A JP2012109303A JP 2012109303 A JP2012109303 A JP 2012109303A JP 2010254966 A JP2010254966 A JP 2010254966A JP 2010254966 A JP2010254966 A JP 2010254966A JP 2012109303 A JP2012109303 A JP 2012109303A
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arrangement surface
element arrangement
connection terminal
insulating resin
main body
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Junji Tsuruoka
純司 鶴岡
Seiji Yasui
誠二 安井
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Aisin AW Co Ltd
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Aisin AW Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754Coating
    • H01L2224/37599Material
    • H01L2224/376Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842Applying energy for connecting
    • H01L2224/8421Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/84214Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

PROBLEM TO BE SOLVED: To provide an electric circuit device in which the constraints on the shape of a connection member being bonded to a connection terminal or a support that supports the connection member can be reduced while ensuring the bonding reliability of the connection terminal and the connection member.SOLUTION: A connection terminal 20 includes a first bonding part 21 being bonded to circuit elements 2, 3 or a substrate 10, a second bonding part 22 provided while spaced apart from the first bonding part 21 in the height direction H perpendicular to an element arrangement surface 11 and being bonded to a conductive connection member 41, a coupling part 23 which couples the first bonding part 21 and one end of the second bonding part 22 in a predetermined reference direction S along the element arrangement surface 11, and an extension 24 provided to extend from the other end of the second bonding part 22 in the reference direction S toward the element arrangement surface 11 side. A surface of an insulating resin 5 is located between the end of the extension 24 on the element arrangement surface 11 side and the second bonding part 22.

Description

本発明は、素子配置面に回路素子が配置された基板と、素子配置面に配置された導電性の接続端子と、素子配置面を覆うように設けられる絶縁樹脂と、を備えた電気回路装置に関する。   The present invention relates to an electric circuit device comprising: a substrate on which circuit elements are arranged on an element arrangement surface; conductive connection terminals arranged on the element arrangement surface; and an insulating resin provided so as to cover the element arrangement surface. About.

上記のような電気回路装置に関する従来技術として、例えば下記の特許文献1に記載された技術がある。以下、この背景技術の説明では、特許文献1の符号を引用する。特許文献1の図6には、接続部材(外部端子11)に接合される接続端子(接続導体15)の上面(上面部P)が露出するように絶縁樹脂(樹脂17a)が設けられた半導体装置(電気回路装置の一例)が示されている。この半導体装置では、回路素子(半導体チップ8)やワイヤ(ボンディングワイヤ9)が絶縁樹脂に埋没しており、これによりレーザ溶接による接合時に発生するスパッタによって半導体装置の電気的特性が劣化するのが抑制されると記載されている。   As a conventional technique related to the above electric circuit device, for example, there is a technique described in Patent Document 1 below. Hereinafter, in the description of the background art, reference numerals of Patent Document 1 are cited. In FIG. 6 of Patent Document 1, a semiconductor provided with an insulating resin (resin 17a) so that the upper surface (upper surface portion P) of the connection terminal (connection conductor 15) joined to the connection member (external terminal 11) is exposed. A device (an example of an electric circuit device) is shown. In this semiconductor device, the circuit elements (semiconductor chip 8) and wires (bonding wires 9) are buried in an insulating resin, which causes the electrical characteristics of the semiconductor device to deteriorate due to sputtering that occurs during joining by laser welding. It is described as being suppressed.

特許文献1の図6に示される構成では、接続端子は、基板(セラミックス4)に形成された回路パターン5,6に接合される第一接合部と、第一接合部から高さ方向に離間して設けられるとともに接続部材に接合される第二接合部と、これら第一接合部及び第二接合部の端部同士を連結する連結部と、を備えている。なお、このような第一接合部、第二接合部、及び連結部を備える接続端子は、下記の特許文献2にも示されている。   In the configuration shown in FIG. 6 of Patent Document 1, the connection terminals are separated from each other in the height direction from the first joint portion that is joined to the circuit patterns 5 and 6 formed on the substrate (ceramics 4). And a connecting portion that connects the end portions of the first connecting portion and the second connecting portion to each other. In addition, the following patent document 2 shows the connection terminal provided with such a 1st junction part, a 2nd junction part, and a connection part.

ところで、特許文献1の図6に示される構成では、絶縁樹脂は、第二接合部の一部が埋まるような高さまで設けられる。そのため、接続端子における接続部材との接合部位(第二接合部の上面)と絶縁樹脂の上面との間の高さ方向の位置の差は僅かとなり、接続部材或いは接続部材を支持する支持体の形状に大きな制約が生じるおそれがある。しかしながら、特許文献1や特許文献2には、接続部材或いは接続部材を支持する支持体の形状の制約に言及した記載はなく、当然ながら、このような制約を小さくするための技術について何ら示されていない。なお、接続端子と接続部材との接合の信頼性を確保する必要があるのは言うまでもない。   By the way, in the structure shown by FIG. 6 of patent document 1, insulating resin is provided to such a height that a part of 2nd junction part is buried. For this reason, the difference in position in the height direction between the connection portion (the upper surface of the second bonding portion) of the connection terminal with the connection member and the upper surface of the insulating resin is small, and the connection member or the support body that supports the connection member There is a risk that the shape may be greatly restricted. However, Patent Document 1 and Patent Document 2 do not mention the restriction of the shape of the connecting member or the support body that supports the connecting member, and naturally, any technique for reducing such a restriction is disclosed. Not. Needless to say, it is necessary to ensure the reliability of the connection between the connection terminal and the connection member.

国際公開第2009/081723号(図6等)International Publication No. 2009/081723 (Fig. 6 etc.) 特開2010−103222号公報(図1等)JP 2010-103222 A (FIG. 1 etc.)

そこで、接続端子と接続部材との接合の信頼性を確保しつつ、接続端子に接合される接続部材或いは当該接続部材を支持する支持体の形状の制約を小さくすることが可能な電気回路装置の実現が望まれる。   Therefore, an electrical circuit device capable of reducing the restriction on the shape of the connecting member joined to the connecting terminal or the support body supporting the connecting member while ensuring the reliability of the joining between the connecting terminal and the connecting member. Realization is desired.

本発明に係る、素子配置面に回路素子が配置された基板と、前記素子配置面に配置された導電性の接続端子と、前記素子配置面を覆うように設けられる絶縁樹脂と、を備えた電気回路装置の特徴構成は、前記接続端子は、前記回路素子又は前記基板に接合される第一接合部と、前記第一接合部から前記素子配置面に直交する高さ方向に離間して設けられると共に導電性の接続部材に接合される第二接合部と、前記第一接合部と前記第二接合部における前記素子配置面に沿った所定の基準方向の一方側端部とを連結する連結部と、前記第二接合部における前記基準方向の他方側端部から前記素子配置面側へ向かって延びるように設けられた延出部と、を備え、前記絶縁樹脂の表面が、前記高さ方向における前記延出部の前記素子配置面側の端部と前記第二接合部との間に位置する点にある。   According to the present invention, there is provided a substrate on which circuit elements are arranged on an element arrangement surface, a conductive connection terminal arranged on the element arrangement surface, and an insulating resin provided so as to cover the element arrangement surface. A characteristic configuration of the electric circuit device is that the connection terminal is provided with a first joint part joined to the circuit element or the substrate, and spaced from the first joint part in a height direction perpendicular to the element arrangement surface. And a second joining portion joined to the conductive connecting member, and a connection for connecting the first joining portion and one end portion in the predetermined reference direction along the element arrangement surface in the second joining portion. And an extending portion provided so as to extend from the other end portion of the reference direction in the second joint portion toward the element arrangement surface side, and the surface of the insulating resin has the height End of the extending portion in the direction of the element arrangement surface In a point located between the second bonding section.

この特徴構成によれば、絶縁樹脂の表面が、高さ方向における延出部の素子配置面側の端部と第二接合部との間に位置するため、第二接合部における接続部材との接合部位と絶縁樹脂の表面との間の高さ方向の位置の差を確保するのが容易となる。これにより、接続部材或いは当該接続部材を支持する支持体が当該接合部位に対して素子配置面側に位置する部分を有する場合であっても、上記の差を適切に確保することで接続端子と接続部材とを適切に接合することができる。このように、上記の特徴構成によれば、接続端子に接合される接続部材或いは当該接続部材を支持する支持体の形状の制約を小さくすることが可能となる。
そして、上記の特徴構成によれば、第二接合部における基準方向の一方側端部に連結される連結部の少なくとも一部、及び第二接合部における基準方向の他方側端部に連結される延出部の少なくとも一部の双方が埋まるように絶縁樹脂が設けられる。これにより、第二接合部は、基準方向の両側で絶縁樹脂を介して基板に支持される。よって、接続部材との接合時における第二接合部の変形を抑制することができ、接続端子と接続部材との接合を信頼性の高いものとするのが容易となっている。
以上のように、上記の特徴構成によれば、接続端子と接続部材との接合の信頼性を確保しつつ、接続端子に接合される接続部材或いは当該接続部材を支持する支持体の形状の制約を小さくすることが可能となる。
According to this characteristic configuration, since the surface of the insulating resin is located between the end portion on the element arrangement surface side of the extending portion in the height direction and the second joint portion, It becomes easy to ensure the difference in the position in the height direction between the joining portion and the surface of the insulating resin. Thereby, even when the connection member or the support that supports the connection member has a portion located on the element arrangement surface side with respect to the bonding portion, the connection terminal and the connection terminal can be secured by appropriately securing the above difference. The connecting member can be appropriately joined. Thus, according to said characteristic structure, it becomes possible to reduce the restrictions of the shape of the connection member joined to a connection terminal, or the support body which supports the said connection member.
And according to said characteristic structure, it connects with at least one part of the connection part connected with the one side edge part of the reference direction in a 2nd junction part, and the other side edge part of the reference direction in a 2nd junction part. An insulating resin is provided so that at least a part of the extending portion is filled. Accordingly, the second bonding portion is supported by the substrate via the insulating resin on both sides in the reference direction. Therefore, it is possible to suppress the deformation of the second joint portion at the time of joining with the connection member, and it is easy to make the joint between the connection terminal and the connection member highly reliable.
As described above, according to the above-described characteristic configuration, the shape of the connection member joined to the connection terminal or the support that supports the connection member is restricted while ensuring the reliability of the connection between the connection terminal and the connection member. Can be reduced.

ここで、前記延出部は、前記第二接合部から延びる本体部分と、当該本体部分における前記素子配置面側の端部から当該本体部分の延在方向に交差する方向に延びるように設けられた屈曲延在部分と、を備えると好適である。   Here, the extension portion is provided so as to extend in a direction intersecting the extending direction of the main body portion from a main body portion extending from the second joint portion and an end portion of the main body portion on the element arrangement surface side. It is preferable to provide a bent extended portion.

この構成によれば、接続端子の大型化を抑制しつつ、延出部における絶縁樹脂に埋没する部分の延在方向に関する設計の自由度を高めることができる。よって、絶縁樹脂による延出部の支持方向を、接続端子と接続部材との接合の形態に応じて適切に設定することができる。
さらに、本体部分の少なくとも一部及び屈曲延在部分の少なくとも一部の双方が絶縁樹脂に埋没する構成とした場合には、延在方向が互いに交差する2つの部分が絶縁樹脂に支持されるため、絶縁樹脂による延出部の支持方向が多くなる。結果、第二接合部における基準方向の他方側端部をより強固に支持することが可能となる。
According to this structure, the freedom degree of the design regarding the extension direction of the part buried in the insulating resin in the extension part can be increased while suppressing an increase in the size of the connection terminal. Therefore, the support direction of the extension part by insulating resin can be appropriately set according to the form of joining of the connection terminal and the connection member.
Further, when at least a part of the main body part and at least a part of the bent extension part are both buried in the insulating resin, two parts whose extending directions intersect each other are supported by the insulating resin. The supporting direction of the extending part by the insulating resin is increased. As a result, it is possible to more firmly support the other end portion in the reference direction in the second joint portion.

また、上記のように前記延出部が前記本体部分と前記屈曲延在部分とを備える構成において、前記屈曲延在部分は、前記本体部分における前記素子配置面側の端部から前記基準方向における前記連結部側へ向かって延びるように設けられていると好適である。   Further, as described above, in the configuration in which the extending portion includes the main body portion and the bent extending portion, the bent extending portion is located in the reference direction from the end portion on the element arrangement surface side in the main body portion. It is preferable to be provided so as to extend toward the connecting portion side.

この構成によれば、接続端子が素子配置面に平行な面内で占める面積を増大させることなく屈曲延在部分を設けることができ、電気回路装置の大型化を抑制しつつ第二接合部における基準方向の他方側端部をより適切に支持することができる。   According to this configuration, the bent extension portion can be provided without increasing the area that the connection terminal occupies in the plane parallel to the element arrangement surface, and in the second joint portion while suppressing the increase in size of the electric circuit device. The other side end portion in the reference direction can be more appropriately supported.

また、上記各構成の電気回路装置において、前記絶縁樹脂の表面が、前記高さ方向において前記回路素子に対して前記素子配置面とは反対側に位置すると好適である。   Moreover, in the electric circuit device having each configuration described above, it is preferable that the surface of the insulating resin is positioned on the opposite side of the element arrangement surface with respect to the circuit element in the height direction.

この構成によれば、回路素子が絶縁樹脂に埋没するため、接続端子と接続部材との接合時に回路素子を保護することができる。例えば、接続端子と接続部材とがレーザ溶接により接合される場合には、当該レーザ溶接によって発生するスパッタにより回路素子が絶縁破壊を起こすのを抑制することができる。   According to this configuration, since the circuit element is buried in the insulating resin, the circuit element can be protected when the connection terminal and the connection member are joined. For example, when the connection terminal and the connection member are joined by laser welding, it is possible to suppress the dielectric breakdown of the circuit element due to sputtering generated by the laser welding.

また、上記各構成の電気回路装置において、前記第二接合部は、前記高さ方向における前記素子配置面側とは反対側から前記接続部材に押圧された状態で当該接続部材に接合されると好適である。   Moreover, in the electric circuit device having each configuration described above, when the second joint portion is joined to the connection member in a state of being pressed by the connection member from the side opposite to the element arrangement surface side in the height direction. Is preferred.

上記の各構成は、第二接合部が高さ方向における素子配置面側とは反対側から接続部材に押圧された状態で当該接続部材に接合される場合に好適であり、このような場合であっても第二接合部の変形を抑制して接続端子と接続部材との接合を信頼性の高いものとすることができる。   Each of the above configurations is suitable when the second bonding portion is bonded to the connection member while being pressed by the connection member from the side opposite to the element arrangement surface side in the height direction. Even if it exists, the deformation | transformation of a 2nd junction part can be suppressed and joining of a connection terminal and a connection member can be made highly reliable.

本発明の実施形態に係る半導体装置の模式図である。1 is a schematic diagram of a semiconductor device according to an embodiment of the present invention. 本発明の実施形態に係る半導体装置の一部斜視図である。1 is a partial perspective view of a semiconductor device according to an embodiment of the present invention. 本発明のその他の実施形態に係る接続端子を示す図である。It is a figure which shows the connection terminal which concerns on other embodiment of this invention.

本発明に係る電気回路装置の実施形態について、図面を参照して説明する。ここでは、本発明に係る電気回路装置を、回路素子として半導体素子(電子素子)を備えた半導体装置(電子回路装置)に適用した場合を例として説明する。図1に示すように、本実施形態に係る半導体装置1は、半導体素子としてスイッチング素子2及びダイオード素子3を備えたスイッチングモジュールとされ、バスバーモジュール40と共に回転電機を制御するためのインバータモジュールを構成している。この半導体装置1は、素子配置面11に半導体素子が配置された基板10と、素子配置面11に配置された第一接続端子20と、素子配置面11を覆うように設けられた絶縁樹脂5とを備える。このような構成において、本実施形態に係る半導体装置1は、第一接続端子20の構成及び絶縁樹脂5の厚さの設定に特徴を有する。以下、本実施形態に係る半導体装置1の構成について、「半導体装置の全体構成」、「第一接続端子の構成」の順に説明する。   An embodiment of an electric circuit device according to the present invention will be described with reference to the drawings. Here, a case where the electric circuit device according to the present invention is applied to a semiconductor device (electronic circuit device) including a semiconductor element (electronic element) as a circuit element will be described as an example. As shown in FIG. 1, the semiconductor device 1 according to the present embodiment is a switching module including a switching element 2 and a diode element 3 as semiconductor elements, and constitutes an inverter module for controlling a rotating electrical machine together with a bus bar module 40. is doing. The semiconductor device 1 includes a substrate 10 on which a semiconductor element is arranged on an element arrangement surface 11, a first connection terminal 20 arranged on the element arrangement surface 11, and an insulating resin 5 provided so as to cover the element arrangement surface 11. With. In such a configuration, the semiconductor device 1 according to the present embodiment is characterized by the configuration of the first connection terminal 20 and the setting of the thickness of the insulating resin 5. Hereinafter, the configuration of the semiconductor device 1 according to the present embodiment will be described in the order of “the overall configuration of the semiconductor device” and “the configuration of the first connection terminal”.

以下の説明では、「上」は、高さ方向H(素子配置面11に直交する方向)に沿って高さが大きくなる方向(+H方向、図1における上方)を指し、「下」は、高さ方向Hに沿って高さが小さくなる方向(−H方向、図1における下方)を指す。また、本例では、素子配置面11に沿った所定の方向(基準方向S)は、素子配置面11に沿った方向であって、基板10に配置されるスイッチング素子2とダイオード素子3の配列方向(図1における左右方向)と一致する。そして、「基準第一方向S1」は、図1における基準方向Sに沿った右方を指し、「基準第二方向S2」は、図1における基準方向Sに沿った左方を指す。   In the following description, “upper” refers to a direction in which the height increases along the height direction H (direction perpendicular to the element arrangement surface 11) (+ H direction, upper in FIG. 1), and “lower” refers to A direction in which the height decreases along the height direction H (−H direction, downward in FIG. 1) is indicated. In this example, the predetermined direction (reference direction S) along the element arrangement surface 11 is a direction along the element arrangement surface 11, and the arrangement of the switching elements 2 and the diode elements 3 arranged on the substrate 10. It corresponds to the direction (left-right direction in FIG. 1). The “reference first direction S1” indicates the right side along the reference direction S in FIG. 1, and the “reference second direction S2” indicates the left side along the reference direction S in FIG.

1.半導体装置の全体構成
半導体装置1の全体構成について図1を参照して説明する。図1に示すように、半導体装置1は、基板10、ケース6、第一接続端子20、第二接続端子30、絶縁部材7、及び絶縁樹脂5を備えている。そして、基板10の上面がスイッチング素子2及びダイオード素子3を配置するための素子配置面11とされ、素子配置面11に配置されたスイッチング素子2及びダイオード素子3により、回転電機(図示せず)を駆動するためのインバータ回路が構成されている。本実施形態では、半導体装置1が本発明における「電気回路装置」に相当する。
1. Overall Configuration of Semiconductor Device The overall configuration of the semiconductor device 1 will be described with reference to FIG. As shown in FIG. 1, the semiconductor device 1 includes a substrate 10, a case 6, a first connection terminal 20, a second connection terminal 30, an insulating member 7, and an insulating resin 5. The upper surface of the substrate 10 is an element arrangement surface 11 for arranging the switching element 2 and the diode element 3, and the rotating electric machine (not shown) is formed by the switching element 2 and the diode element 3 arranged on the element arrangement surface 11. An inverter circuit for driving is configured. In the present embodiment, the semiconductor device 1 corresponds to an “electric circuit device” in the present invention.

そして、スイッチング素子2及びダイオード素子3の上側には、インバータ回路と電源(図示せず)との間の電流の経路を形成するとともに、インバータ回路と回転電機(図示せず)との間の電流の経路を形成するためのバスバーモジュール40が配置される。本例では、回転電機は、三相交流で駆動される交流電動機とされており、電力の供給を受けて動力を発生するモータ(電動機)としての機能と、動力の供給を受けて電力を発生するジェネレータ(発電機)としての機能との双方を果たすことが可能とされている。このような回転電機は、例えば、電動車両やハイブリッド車両に駆動力源として備えられる。   A current path between the inverter circuit and the power source (not shown) is formed above the switching element 2 and the diode element 3, and the current between the inverter circuit and the rotating electrical machine (not shown). A bus bar module 40 for forming the path is arranged. In this example, the rotating electrical machine is an AC motor driven by three-phase AC, and functions as a motor (electric motor) that generates power by receiving power supply and generates power by receiving power supply. It is possible to fulfill both of the functions as a generator (generator). Such a rotating electrical machine is provided as a driving force source in, for example, an electric vehicle or a hybrid vehicle.

図示は省略するが、スイッチング素子2及びダイオード素子3が構成するインバータ回路は、ブリッジ回路により構成される。そして、本実施形態では、電源電圧の正極側と負極側との間に2つのスイッチング素子2が直列に接続され、この直列回路が3回線並列に接続されている。すなわち、本例では、6個のスイッチング素子2がインバータ回路を構成しており、半導体装置1は、これら6個のスイッチング素子2のそれぞれを配置するための6個の基板10を備えている。そして、6個の基板10のそれぞれに、FWD(Free Wheel Diode)として機能するダイオード素子3が、スイッチング素子2のエミッタ−コレクタ間に並列接続されている。すなわち、6個の基板10のそれぞれには、スイッチング素子2及びダイオード素子3がそれぞれ1つずつ配置されている。図1には、6個の基板10の内の2個の基板10が示されている。本実施形態では、半導体素子(スイッチング素子2及びダイオード素子3)が、本発明における「回路素子」に相当する。   Although not shown, the inverter circuit constituted by the switching element 2 and the diode element 3 is constituted by a bridge circuit. In the present embodiment, two switching elements 2 are connected in series between the positive side and the negative side of the power supply voltage, and this series circuit is connected in parallel in three lines. That is, in this example, six switching elements 2 constitute an inverter circuit, and the semiconductor device 1 includes six substrates 10 on which the six switching elements 2 are arranged. A diode element 3 that functions as an FWD (Free Wheel Diode) is connected in parallel between the emitter and collector of the switching element 2 on each of the six substrates 10. That is, one switching element 2 and one diode element 3 are arranged on each of the six substrates 10. FIG. 1 shows two of the six substrates 10. In the present embodiment, the semiconductor elements (switching element 2 and diode element 3) correspond to the “circuit element” in the present invention.

基板10は、絶縁部材7の上面に載置され、上面がスイッチング素子2及びダイオード素子3を配置するための素子配置面11とされている。本例では、基板10は導電性の材料(例えば、銅やアルミニウム等の金属材料)で形成されており、基板10はヒートスプレッダとしても機能する。   The substrate 10 is placed on the upper surface of the insulating member 7, and the upper surface serves as an element arrangement surface 11 for arranging the switching element 2 and the diode element 3. In this example, the substrate 10 is made of a conductive material (for example, a metal material such as copper or aluminum), and the substrate 10 also functions as a heat spreader.

基板10(本例では6個の基板10)を支持する絶縁部材7は、ケース6に固定されている。本例では、ケース6は、基板10及び絶縁部材7を囲む周壁部6bと、絶縁部材7の下面が固定される底壁部6aとを備える。また、本例では、ケース6は、導電性の材料(例えば、銅やアルミニウム等の金属材料)で形成されている。   The insulating member 7 that supports the substrate 10 (six substrates 10 in this example) is fixed to the case 6. In this example, the case 6 includes a peripheral wall portion 6b that surrounds the substrate 10 and the insulating member 7, and a bottom wall portion 6a to which the lower surface of the insulating member 7 is fixed. In this example, the case 6 is formed of a conductive material (for example, a metal material such as copper or aluminum).

そして、ケース6の底壁部6aと周壁部6bとにより形成される凹状の空間に、絶縁樹脂5が充填されている。絶縁樹脂5は、例えばエポキシ樹脂やウレタン樹脂等の電気的絶縁性を有する硬質の樹脂で形成され、素子配置面11を覆うように設けられている。本実施形態では、図1に示すように、絶縁樹脂5の表面は、高さ方向Hにおいてスイッチング素子2及びダイオード素子3に対して素子配置面11とは反対側に位置する。すなわち、本実施形態では、スイッチング素子2及びダイオード素子3の双方が絶縁樹脂5に埋没するように、絶縁樹脂5の厚さ(高さ)が設定されている。これにより、第一接続端子20及び第二接続端子30とバスバー41との接合時にスイッチング素子2やダイオード素子3を保護することが可能となっている。   And the insulating resin 5 is filled in the concave space formed by the bottom wall part 6a and the peripheral wall part 6b of the case 6. The insulating resin 5 is formed of a hard resin having electrical insulation properties such as an epoxy resin or a urethane resin, and is provided so as to cover the element arrangement surface 11. In the present embodiment, as shown in FIG. 1, the surface of the insulating resin 5 is located on the side opposite to the element arrangement surface 11 with respect to the switching element 2 and the diode element 3 in the height direction H. That is, in this embodiment, the thickness (height) of the insulating resin 5 is set so that both the switching element 2 and the diode element 3 are buried in the insulating resin 5. Thereby, the switching element 2 and the diode element 3 can be protected when the first connection terminal 20 and the second connection terminal 30 are joined to the bus bar 41.

スイッチング素子2は、上面にエミッタ電極を備え、下面にコレクタ電極を備えている。そして、スイッチング素子2は、はんだにより素子配置面11上に固定され、下面のコレクタ電極が基板10と導通する。また、ダイオード素子3は、上面にアノード電極を備え、下面にカソード電極を備えている。そして、ダイオード素子3は、はんだにより素子配置面11上に固定され、下面のカソード電極が基板10と導通する。すなわち、基板10は、スイッチング素子2のコレクタ電極とダイオード素子3のカソード電極と同電位となる。   The switching element 2 includes an emitter electrode on the upper surface and a collector electrode on the lower surface. The switching element 2 is fixed on the element arrangement surface 11 with solder, and the collector electrode on the lower surface is electrically connected to the substrate 10. The diode element 3 includes an anode electrode on the upper surface and a cathode electrode on the lower surface. The diode element 3 is fixed on the element arrangement surface 11 with solder, and the cathode electrode on the lower surface is electrically connected to the substrate 10. That is, the substrate 10 has the same potential as the collector electrode of the switching element 2 and the cathode electrode of the diode element 3.

そして、スイッチングモジュールとしての半導体装置1と、バスバーモジュール40と、を電気的に接続するための接続端子(第一接続端子20及び第二接続端子30)が、素子配置面11に配置されている。第一接続端子20及び第二接続端子30の双方は、導電性の材料(例えば、銅やアルミニウム等の金属材料)で形成されている。   Then, connection terminals (first connection terminal 20 and second connection terminal 30) for electrically connecting the semiconductor device 1 as a switching module and the bus bar module 40 are arranged on the element arrangement surface 11. . Both the first connection terminal 20 and the second connection terminal 30 are made of a conductive material (for example, a metal material such as copper or aluminum).

具体的には、第一接続端子20は、素子配置面11上にはんだにより固定されている。すなわち、本例では、第一接続端子20は素子配置面11上に直接配置されている。そして、第一接続端子20は、導電性の材料で形成された基板10を介して、スイッチング素子2の下面(コレクタ電極)及びダイオード素子3の下面(カソード電極)と導通する。本実施形態では、第一接続端子20が本発明における「接続端子」に相当する。   Specifically, the first connection terminal 20 is fixed on the element arrangement surface 11 with solder. That is, in this example, the first connection terminal 20 is directly arranged on the element arrangement surface 11. The first connection terminal 20 is electrically connected to the lower surface (collector electrode) of the switching element 2 and the lower surface (cathode electrode) of the diode element 3 through the substrate 10 formed of a conductive material. In the present embodiment, the first connection terminal 20 corresponds to the “connection terminal” in the present invention.

第二接続端子30は、半導体素子(スイッチング素子2及びダイオード素子3)の上面にはんだにより固定されている。すなわち、本例では、第二接続端子30は、間に半導体素子(回路素子)を介して素子配置面11上に配置されている。図1に示すように、第二接続端子30は、スイッチング素子2の上面(エミッタ電極)とダイオード素子3の上面(アノード電極)とを電気的に接続する状態で配置されている。   The second connection terminal 30 is fixed to the upper surface of the semiconductor element (the switching element 2 and the diode element 3) with solder. That is, in this example, the second connection terminal 30 is disposed on the element arrangement surface 11 with a semiconductor element (circuit element) interposed therebetween. As shown in FIG. 1, the second connection terminal 30 is disposed in a state where the upper surface (emitter electrode) of the switching element 2 and the upper surface (anode electrode) of the diode element 3 are electrically connected.

本例では、第一接続端子20及び第二接続端子30の双方は、一定幅の帯状部材(板状部材)を屈曲成形してなる。具体的には、第一接続端子20は、基板10に接合された第一接合部21と、接合面20aが上面に形成された第二接合部22と、第一接合部21と第二接合部22とを連結する連結部23と、第二接合部22から延出する延出部24と、を備えている。なお、第一接続端子20の詳細な構成については後に第2節で説明する。   In this example, both the first connection terminal 20 and the second connection terminal 30 are formed by bending a band-shaped member (plate-shaped member) having a constant width. Specifically, the first connection terminal 20 includes a first joint 21 joined to the substrate 10, a second joint 22 having a joint surface 20a formed on the upper surface, and the first joint 21 and the second joint. A connecting portion 23 that connects the portion 22 and an extending portion 24 that extends from the second joint portion 22 are provided. The detailed configuration of the first connection terminal 20 will be described later in Section 2.

第二接続端子30は、図1に示すように、接合面30aが上面に形成された反素子側接合部と、スイッチング素子2の上面にはんだにより固定される第一素子側接合部と、ダイオード素子3の上面にはんだにより固定される第二素子側接合部と、反素子側接合部と第一素子側接合部とを連結する第一連結部と、反素子側接合部と第二素子側接合部とを連結する第二連結部と、を備えている。   As shown in FIG. 1, the second connection terminal 30 includes a non-element-side joint having a joint surface 30 a formed on the upper surface, a first element-side joint fixed to the upper surface of the switching element 2 by solder, a diode A second element side joint fixed to the upper surface of the element 3 by solder, a first connection part for connecting the anti element side joint and the first element side joint, the anti element side joint and the second element side And a second connecting part that connects the joint part.

バスバーモジュール40は、バスバー41と、バスバー41を支持する支持体42とを備えている。バスバー41は、導電性の材料(例えば、銅やアルミニウム等の金属材料)で形成されている。また、支持体42は、絶縁性の材料(例えば樹脂等)で形成されている。本実施形態では、バスバー41が本発明における「接続部材」に相当する。   The bus bar module 40 includes a bus bar 41 and a support 42 that supports the bus bar 41. The bus bar 41 is made of a conductive material (for example, a metal material such as copper or aluminum). The support 42 is formed of an insulating material (for example, resin). In the present embodiment, the bus bar 41 corresponds to the “connecting member” in the present invention.

そして、第一接続端子20が備える接合面20aとバスバー41とが接合されることで、スイッチング素子2の下面(コレクタ電極)及びダイオード素子3の下面(カソード電極)が、第一接続端子20を介してバスバー41に接続される。また、第二接続端子30が備える接合面30aとバスバー41とが接合されることで、スイッチング素子2の上面(エミッタ電極)及びダイオード素子3の上面(アノード電極)が、第二接続端子30を介してバスバー41に接続される。   And the joining surface 20a with which the 1st connection terminal 20 is provided, and the bus-bar 41 are joined, The lower surface (collector electrode) of the switching element 2 and the lower surface (cathode electrode) of the diode element 3 connect the 1st connection terminal 20 with it. To the bus bar 41. In addition, the bonding surface 30 a included in the second connection terminal 30 and the bus bar 41 are bonded, so that the upper surface (emitter electrode) of the switching element 2 and the upper surface (anode electrode) of the diode element 3 connect the second connection terminal 30. To the bus bar 41.

本実施形態では、第一接続端子20及び第二接続端子30とバスバー41とは、レーザ溶接により接合される。そして、本例では、第一接続端子20とバスバー41との接合の信頼性を高めるべく、第一接続端子20は、上側からバスバー41に押圧された状態でバスバー41にレーザ溶接により接合される。具体的には、第二接合部22が高さ方向Hにおける素子配置面11側とは反対側(すなわち上側)からバスバー41に押圧された状態で、第一接続端子20とバスバー41とが接合される。同様に、第二接続端子30も、上側からバスバー41に押圧された状態でバスバー41にレーザ溶接により接合される。具体的には、第二接続端子30が備える上記反素子側接合部が上側からバスバー41に押圧された状態で、第二接続端子30とバスバー41とが接合される。なお、このようなレーザ溶接時にはスパッタが飛散するおそれがあるが、上記のように本例ではスイッチング素子2やダイオード素子3は絶縁樹脂5に埋没している。よって、レーザ溶接時に発生するスパッタによってスイッチング素子2やダイオード素子3が絶縁破壊を起こすことは抑制されている。   In the present embodiment, the first connection terminal 20, the second connection terminal 30, and the bus bar 41 are joined by laser welding. And in this example, in order to raise the reliability of joining with the 1st connection terminal 20 and the bus bar 41, the 1st connection terminal 20 is joined to the bus bar 41 by the laser welding in the state pressed by the bus bar 41 from the upper side. . Specifically, the first connection terminal 20 and the bus bar 41 are bonded in a state where the second bonding portion 22 is pressed against the bus bar 41 from the side opposite to the element arrangement surface 11 side in the height direction H (that is, the upper side). Is done. Similarly, the second connection terminal 30 is also joined to the bus bar 41 by laser welding while being pressed by the bus bar 41 from above. Specifically, the second connection terminal 30 and the bus bar 41 are joined in a state where the anti-element side joint provided in the second connection terminal 30 is pressed against the bus bar 41 from above. Although spatter may be scattered during such laser welding, the switching element 2 and the diode element 3 are buried in the insulating resin 5 in this example as described above. Therefore, it is suppressed that the switching element 2 and the diode element 3 cause dielectric breakdown due to the spatter generated during laser welding.

なお、インバータモジュールの電気的絶縁性を確保すべく、第一接続端子20及び第二接続端子30とバスバー41とを接合した後、絶縁樹脂5に対して上側からさらに絶縁樹脂(絶縁樹脂5と同じ又は異なる材質の樹脂)を充填し、第一接続端子20や第二接続端子30の全体が絶縁樹脂に埋没する構成とすることができる。   In addition, in order to ensure the electrical insulation of an inverter module, after joining the 1st connecting terminal 20, the 2nd connecting terminal 30, and the bus-bar 41, it is further insulating resin (insulating resin 5 and the insulation resin 5 from the upper side). The resin can be filled with the same or different material, and the entire first connection terminal 20 and second connection terminal 30 can be buried in the insulating resin.

2.第一接続端子の構成
次に、第一接続端子20の構成について詳細に説明する。上述したように、第一接続端子20は、第一接合部21、第二接合部22、連結部23、及び延出部24を備えている。本実施形態では、延出部24は、本体部分24aと屈曲延在部分24bとを備えている。そして、本例では第一接続端子20は一定幅の帯状部材(板状部材)を屈曲成形してなるため、第一接合部21、第二接合部22、連結部23、延出部24の本体部分24a、及び延出部24の屈曲延在部分24bのそれぞれは、平板状に形成されている。
2. Next, the configuration of the first connection terminal 20 will be described in detail. As described above, the first connection terminal 20 includes the first joint portion 21, the second joint portion 22, the connecting portion 23, and the extending portion 24. In the present embodiment, the extending portion 24 includes a main body portion 24a and a bent extending portion 24b. In this example, since the first connection terminal 20 is formed by bending a band-shaped member (plate-shaped member) having a constant width, the first connecting portion 21, the second connecting portion 22, the connecting portion 23, and the extending portion 24 Each of the main body portion 24a and the bent extending portion 24b of the extending portion 24 is formed in a flat plate shape.

第一接合部21は、回路素子(本例では半導体素子、より具体的には、スイッチング素子2又はダイオード素子3)又は基板10に接合される部分であり、本例では、基板10(具体的には基板10の素子配置面11)に接合されている。   The first bonding portion 21 is a portion bonded to a circuit element (in this example, a semiconductor element, more specifically, the switching element 2 or the diode element 3) or the substrate 10, and in this example, the substrate 10 (specifically, Are bonded to the element arrangement surface 11) of the substrate 10.

第二接合部22は、第一接合部21から素子配置面11に直交する高さ方向Hに離間して設けられると共にバスバー41に接合される部分である。具体的には、第二接合部22の上面が、バスバー41に接合される接合面20aとされている。本実施形態では、第一接合部21と第二接合部22とは互いに平行に配置され、第二接合部22の上面(接合面20a)は、素子配置面11と平行に配置される。また、本実施形態では、第一接合部21と第二接合部22とは互いに同一の面積(同一サイズの矩形状)となるように形成されているとともに、高さ方向Hに沿って見て重複するように配置されている。より具体的には、本実施形態では、高さ方向Hに沿っていずれの側から見た場合でも、第一接合部21及び第二接合部22の一方が他方に隠れるように配置されている。なお、第一接合部21と第二接合部22とが互いに異なる面積とされた構成とすることもできる。   The second bonding portion 22 is a portion that is provided apart from the first bonding portion 21 in the height direction H perpendicular to the element arrangement surface 11 and is bonded to the bus bar 41. Specifically, the upper surface of the second bonding portion 22 is a bonding surface 20 a that is bonded to the bus bar 41. In the present embodiment, the first bonding portion 21 and the second bonding portion 22 are arranged in parallel with each other, and the upper surface (the bonding surface 20 a) of the second bonding portion 22 is arranged in parallel with the element arrangement surface 11. In the present embodiment, the first joint portion 21 and the second joint portion 22 are formed so as to have the same area (rectangular shape of the same size) and are viewed along the height direction H. It is arranged so that it overlaps. More specifically, in this embodiment, even when viewed from either side along the height direction H, the first joint portion 21 and the second joint portion 22 are arranged so as to be hidden behind the other. . In addition, it can also be set as the structure by which the 1st junction part 21 and the 2nd junction part 22 were mutually different areas.

連結部23は、第一接合部21と第二接合部22における基準方向Sの一方側端部とを連結する部分である。本実施形態では、図1に示すように、連結部23と第一接合部21との連結箇所は、第一接合部21における基準方向Sの端部とされている。すなわち、本実施形態では、連結部23は、第一接合部21における基準方向Sの端部と、第二接合部22における基準方向Sの端部とを連結している。さらに、本実施形態では、連結部23は、第一接合部21と第二接合部22とのそれぞれにおける基準方向Sの同じ側の端部同士を連結している。そして、上記のように、本実施形態では、高さ方向Hに沿っていずれの側から見た場合でも、第一接合部21及び第二接合部22の一方が他方に隠れるように配置されており、連結部23は素子配置面11に直交する方向(すなわち高さ方向H)に沿って延びるように形成されている。   The connecting portion 23 is a portion that connects the first joint portion 21 and the one end portion in the reference direction S in the second joint portion 22. In the present embodiment, as shown in FIG. 1, the connecting portion between the connecting portion 23 and the first joint portion 21 is an end portion in the reference direction S in the first joint portion 21. That is, in the present embodiment, the connecting portion 23 connects the end portion in the reference direction S in the first joint portion 21 and the end portion in the reference direction S in the second joint portion 22. Furthermore, in this embodiment, the connection part 23 has connected the edge parts of the same side of the reference | standard direction S in each of the 1st junction part 21 and the 2nd junction part 22. FIG. As described above, in this embodiment, even when viewed from either side along the height direction H, one of the first joint 21 and the second joint 22 is arranged to be hidden behind the other. The connecting portion 23 is formed so as to extend along a direction orthogonal to the element arrangement surface 11 (that is, the height direction H).

例えば、図1における左側の第一接続端子20については、連結部23は、第一接合部21における基準第二方向S2側の端部と、第二接合部22における基準第二方向S2側の端部とを連結している。そして、第二接合部22における基準第一方向S1側の端部から素子配置面11側へ向かって延びるように延出部24が設けられている。この第一接続端子20については、基準第一方向S1側及び基準第二方向S2側が、それぞれ、本発明における「基準方向の他方側」及び「基準方向の一方側」に相当する。なお、「ある部位や部材側へ向かって延びる」とは、延在方向に沿った移動に伴い当該部位や部材に近づくことを意味し、必ずしも延出元と当該部位や部材とを結ぶ直線に沿って延びることを意味するものではない。   For example, with respect to the first connection terminal 20 on the left side in FIG. 1, the connecting portion 23 includes an end portion on the reference second direction S2 side in the first joint portion 21 and a reference second direction S2 side in the second joint portion 22. The end is connected. And the extension part 24 is provided so that it may extend toward the element arrangement | positioning surface 11 side from the edge part by the side of 1st reference | standard direction S1 in the 2nd junction part 22. As shown in FIG. Regarding the first connection terminal 20, the reference first direction S1 side and the reference second direction S2 side correspond to “the other side of the reference direction” and “one side of the reference direction” in the present invention, respectively. Note that “extending toward a certain part or member side” means that the part or member approaches the part along the extension direction, and is not necessarily a straight line connecting the extension source and the part or member. It does not mean extending along.

また、図1における右側の第一接続端子20については、連結部23は、第一接合部21における基準第一方向S1側の端部と、第二接合部22における基準第一方向S1側の端部とを連結している。そして、第二接合部22における基準第二方向S2側の端部から素子配置面11側へ向かって延びるように延出部24が設けられている。この第一接続端子20については、基準第一方向S1側及び基準第二方向S2側が、それぞれ、本発明における「基準方向の一方側」及び「基準方向の他方側」に相当する。   Moreover, about the 1st connection terminal 20 of the right side in FIG. 1, the connection part 23 is the edge part of the reference | standard 1st direction S1 side in the 1st junction part 21, and the reference | standard 1st direction S1 side in the 2nd junction part 22. The end is connected. And the extension part 24 is provided so that it may extend toward the element arrangement | positioning surface 11 side from the edge part by the side of the reference | standard 2nd direction S2 in the 2nd junction part 22. As shown in FIG. Regarding the first connection terminal 20, the reference first direction S1 side and the reference second direction S2 side correspond to "one side of the reference direction" and "the other side of the reference direction" in the present invention, respectively.

延出部24は、第二接合部22における基準方向Sの端部、具体的には、基準方向Sにおける連結部23が連結される側とは反対側の端部から、素子配置面11側へ向かって延びるように設けられた部分である。本実施形態では、上記のように、延出部24は、本体部分24aと屈曲延在部分24bとを備えている。なお、図1に示す例では、延出部24は、連結部23に対してバスバーモジュール40側(支持体42側)に位置するように設けられている。   The extending portion 24 extends from the end of the second bonding portion 22 in the reference direction S, specifically, from the end opposite to the side where the connecting portion 23 is connected in the reference direction S to the element placement surface 11 side. It is a part provided so that it may extend toward. In the present embodiment, as described above, the extending portion 24 includes the main body portion 24a and the bent extending portion 24b. In the example shown in FIG. 1, the extending part 24 is provided so as to be positioned on the bus bar module 40 side (supporting body 42 side) with respect to the connecting part 23.

本体部分24aは、第二接合部22から延びる部分であり、一端が第二接合部22における基準方向Sの端部に連結され、他端が屈曲延在部分24bの端部に連結されている。本実施形態では、図1に示すように、本体部分24aは、第二接合部22から高さ方向Hに沿って下方に延びるように形成されている。これにより、第一接続端子20が素子配置面11に平行な面内で占める面積を増大させることなく、本体部分24aを設けることが可能となっている。   The main body portion 24a is a portion extending from the second joint portion 22, and one end is connected to the end portion of the second joint portion 22 in the reference direction S and the other end is connected to the end portion of the bent extension portion 24b. . In the present embodiment, as shown in FIG. 1, the main body portion 24 a is formed so as to extend downward along the height direction H from the second joint portion 22. Thereby, the main body portion 24 a can be provided without increasing the area occupied by the first connection terminal 20 in a plane parallel to the element arrangement surface 11.

屈曲延在部分24bは、本体部分24aにおける素子配置面11側の端部から、本体部分24aの延在方向に交差する方向に沿って延びるように設けられている。本実施形態では、屈曲延在部分24bは、本体部分24aにおける素子配置面11側の端部から、基準方向Sにおける連結部23側へ向かって延びるように設けられている。これにより、第一接続端子20が素子配置面11に平行な面内で占める面積を増大させることなく屈曲延在部分24bを設けることが可能となっており、半導体装置1の大型化を抑制しつつ第二接合部22をより適切に支持することが可能となっている。なお、本例では、屈曲延在部分24bは、基準方向Sに沿って延びるように形成されており、屈曲延在部分24bは素子配置面11と平行な板状部材とされている。   The bent extending portion 24b is provided so as to extend along the direction intersecting the extending direction of the main body portion 24a from the end portion of the main body portion 24a on the element arrangement surface 11 side. In the present embodiment, the bent extension portion 24b is provided so as to extend from the end portion on the element arrangement surface 11 side in the main body portion 24a toward the connecting portion 23 side in the reference direction S. Thereby, it is possible to provide the bent extended portion 24b without increasing the area occupied by the first connection terminal 20 in the plane parallel to the element arrangement surface 11, and the enlargement of the semiconductor device 1 is suppressed. However, it is possible to support the second joint portion 22 more appropriately. In this example, the bent extended portion 24 b is formed to extend along the reference direction S, and the bent extended portion 24 b is a plate-like member parallel to the element arrangement surface 11.

そして、絶縁樹脂5は、高さ方向Hにおける延出部24の素子配置面11側の端部と第二接合部22との間に表面が位置するように設けられている。これにより、第二接合部22における基準方向Sの端部に連結される連結部23の少なくとも一部と、第二接合部22における基準方向Sの連結部23とは反対側の端部に連結される延出部24の少なくとも一部との双方が絶縁樹脂5に埋まることになる。よって、第二接合部22は、基準方向Sの両側で絶縁樹脂5を介して基板10に支持され、バスバー41との接合時における第二接合部22の変形を抑制して、第一接続端子20とバスバー41との接合を信頼性の高いものとすることが可能となっている。   The insulating resin 5 is provided such that the surface is positioned between the end portion on the element arrangement surface 11 side of the extending portion 24 in the height direction H and the second bonding portion 22. Thereby, it connects with the edge part on the opposite side to the connection part 23 of the reference direction S in the 2nd junction part 22 at least one part of the connection part 23 connected with the edge part of the reference | standard direction S in the 2nd junction part 22. Both the extended portion 24 and the extended portion 24 are buried in the insulating resin 5. Therefore, the 2nd junction part 22 is supported by the board | substrate 10 via the insulating resin 5 on both sides of the reference | standard direction S, suppresses a deformation | transformation of the 2nd junction part 22 at the time of joining with the bus-bar 41, and a 1st connection terminal 20 and the bus bar 41 can be joined with high reliability.

さらに、本実施形態では、図1に示すように、絶縁樹脂5の表面は、本体部分24aの上下方向中間部と同じ高さに位置し、本体部分24aの下側部分及び屈曲延在部分24bの全体が絶縁樹脂5に埋没する。すなわち、本例では、延在方向が互いに交差する2つの部分、具体的には、延在方向が高さ方向Hに沿う本体部分24aの少なくとも一部(本例では一部)と、延在方向が基準方向Sに沿う屈曲延在部分24bの少なくとも一部(本例では全部)とが絶縁樹脂5に埋没するため、第二接合部22をより強固に支持することが可能となっている。   Furthermore, in this embodiment, as shown in FIG. 1, the surface of the insulating resin 5 is located at the same height as the middle part of the main body part 24a in the vertical direction, and the lower part of the main body part 24a and the bent extension part 24b. Is buried in the insulating resin 5. That is, in this example, two parts whose extending directions intersect each other, specifically, at least a part (a part in this example) of the main body part 24a whose extending direction extends along the height direction H, and an extension Since at least a part (all in this example) of the bent extending portion 24b whose direction is along the reference direction S is buried in the insulating resin 5, the second bonding portion 22 can be supported more firmly. .

また、絶縁樹脂5の表面が、高さ方向Hにおける延出部24の素子配置面11側の端部と第二接合部22との間に位置するため、本構成では第二接合部22におけるバスバー41との接合部位(本例では第二接合部22の上面)と絶縁樹脂5の表面との間の高さ方向Hの位置の差を確保するのが容易となっている。よって、図1に示すように、バスバーモジュール40が備える支持体42の下端部が、バスバー41の下端部に対して下方に位置するような場合であっても、第一接続端子20とバスバー41とを適切に接合することが可能となっている。   In addition, since the surface of the insulating resin 5 is located between the end portion on the element arrangement surface 11 side of the extending portion 24 in the height direction H and the second bonding portion 22, in this configuration, the second bonding portion 22 It is easy to ensure a difference in the position in the height direction H between the joint portion with the bus bar 41 (in this example, the upper surface of the second joint portion 22) and the surface of the insulating resin 5. Therefore, as shown in FIG. 1, even when the lower end portion of the support 42 included in the bus bar module 40 is positioned below the lower end portion of the bus bar 41, the first connection terminal 20 and the bus bar 41 are included. And can be joined appropriately.

3.その他の実施形態
最後に、本発明に係るその他の実施形態を説明する。なお、以下の各々の実施形態で開示される特徴は、その実施形態でのみ利用できるものではなく、矛盾が生じない限り、別の実施形態にも適用可能である。
3. Other Embodiments Finally, other embodiments according to the present invention will be described. Note that the features disclosed in each of the following embodiments can be used only in that embodiment, and can be applied to other embodiments as long as no contradiction arises.

(1)上記の実施形態では、第一接続端子20が備える第一接合部21が、基板10に接合されている構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、第一接合部21がスイッチング素子2やダイオード素子3等の半導体素子(回路素子)に接合された構成とすることもできる。図3に、第一接合部21がスイッチング素子2の上面に接合された構成の例を示す。 (1) In the above embodiment, the configuration in which the first joint portion 21 included in the first connection terminal 20 is joined to the substrate 10 has been described as an example. However, the embodiment of the present invention is not limited to this, and the first junction 21 may be configured to be joined to a semiconductor element (circuit element) such as the switching element 2 or the diode element 3. FIG. 3 shows an example of a configuration in which the first joint portion 21 is joined to the upper surface of the switching element 2.

(2)上記の実施形態では、連結部23が、第一接合部21と第二接合部22とのそれぞれにおける基準方向Sの同じ側の端部同士を連結している構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、連結部23が、第一接合部21と第二接合部22とのそれぞれにおける基準方向Sの互いに異なる側の端部同士を連結する構成とすることもできる。このような構成において、連結部23を高さ方向Hに対して傾斜して交差する方向に沿って一様に延びるように形成することができ、或いは、連結部23が中間部に単数又は複数(例えば2箇所)の屈曲部を有する構成とすることもできる。そして、このような構成においても、第二接合部22を連結部23と延出部24とにより基準方向Sの両側から支持することができる。 (2) In the above-described embodiment, the connection portion 23 is described as an example of a configuration in which the ends on the same side in the reference direction S in each of the first joint portion 21 and the second joint portion 22 are connected. . However, the embodiment of the present invention is not limited to this, and the connecting portion 23 connects the ends on the different sides of the reference direction S in each of the first joint portion 21 and the second joint portion 22. It can also be set as the structure to do. In such a configuration, the connecting portion 23 can be formed so as to extend uniformly along the direction intersecting with the height direction H. Alternatively, the connecting portion 23 may be a single or plural connecting portions in the intermediate portion. It can also be set as the structure which has a bending part (for example, two places). Even in such a configuration, the second bonding portion 22 can be supported from both sides of the reference direction S by the connecting portion 23 and the extending portion 24.

(3)上記の実施形態では、絶縁樹脂5の表面が、本体部分24aの上下方向中間部と同じ高さに位置し、本体部分24aの下側部分及び屈曲延在部分24bの全体が絶縁樹脂5に埋没する構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、絶縁樹脂5の表面が、本体部分24aの素子配置面11側端部(下端部)と同じ位置或いは当該端部より下方に位置し、屈曲延在部分24bの少なくとも一部のみが絶縁樹脂5に埋没する構成とすることもできる。また、絶縁樹脂5の表面が、本体部分24aの素子配置面11とは反対側の端部(上端部)と同じ位置に位置し、本体部分24aの全体が絶縁樹脂5に埋没し、第二接合部22のみが絶縁樹脂5の外部に露出した構成とすることもできる。 (3) In the above embodiment, the surface of the insulating resin 5 is positioned at the same height as the middle part of the main body portion 24a in the vertical direction, and the lower portion of the main body portion 24a and the entire bent extending portion 24b are insulating resin. The configuration buried in 5 has been described as an example. However, the embodiment of the present invention is not limited to this, and the surface of the insulating resin 5 is located at the same position as the element arrangement surface 11 side end (lower end) of the main body portion 24a or below the end. In addition, it is possible to adopt a configuration in which at least a part of the bent extended portion 24 b is buried in the insulating resin 5. Further, the surface of the insulating resin 5 is located at the same position as the end (upper end) of the main body portion 24a opposite to the element arrangement surface 11, and the entire main body portion 24a is buried in the insulating resin 5, Only the joint portion 22 may be exposed to the outside of the insulating resin 5.

(4)上記の実施形態では、延出部24が、本体部分24aと屈曲延在部分24bとを備える構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、延出部24が本体部分24aのみを備え、延出部24の延在方向が全体に亘って一様に形成された構成とすることもできる。 (4) In the above embodiment, the configuration in which the extending portion 24 includes the main body portion 24a and the bent extending portion 24b has been described as an example. However, the embodiment of the present invention is not limited to this, and the extending portion 24 includes only the main body portion 24a, and the extending direction of the extending portion 24 is uniformly formed throughout. You can also

(5)上記の実施形態では、屈曲延在部分24bが、本体部分24aにおける素子配置面11側の端部から、基準方向Sにおける連結部23側へ向かって延びるように設けられている構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、屈曲延在部分24bが、本体部分24aにおける素子配置面11側の端部から、基準方向Sにおける連結部23とは反対側へ向かって延びるように設けられた構成とすることもできる。 (5) In the above embodiment, the bent extension portion 24b is provided so as to extend from the end portion on the element arrangement surface 11 side in the main body portion 24a toward the connecting portion 23 side in the reference direction S. Described as an example. However, the embodiment of the present invention is not limited to this, and the bent extending portion 24b extends from the end portion on the element arrangement surface 11 side in the main body portion 24a to the side opposite to the connecting portion 23 in the reference direction S. It can also be set as the structure provided so that it might extend toward.

(6)上記の実施形態では、屈曲延在部分24bが、基準方向Sに沿って延びるように形成された構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、屈曲延在部分24bが、本体部分24aにおける素子配置面11側の端部から基準方向Sに対して傾斜して交差する方向に沿って上側或いは下側へ向かって延びるように設けられた構成とすることもできる。屈曲延在部分24bが当該端部から上側へ向かって延びるように設けられた構成では、本体部分24aの少なくとも一部及び屈曲延在部分24bの少なくとも一部の双方が、絶縁樹脂5に埋没する構成となる。また、屈曲延在部分24bが当該端部から下側へ向かって延びるように設けられた構成では、屈曲延在部分24bの一部又は全部のみが絶縁樹脂5に埋没する構成とすることができ、また、屈曲延在部分24bの全部及び本体部分24aの少なくとも一部の双方が絶縁樹脂5に埋没する構成とすることもできる。 (6) In the above-described embodiment, the configuration in which the bent extension portion 24b is formed to extend along the reference direction S has been described as an example. However, the embodiment of the present invention is not limited to this, and the bending extension portion 24b is inclined in the direction intersecting with the reference direction S from the end portion on the element arrangement surface 11 side in the main body portion 24a. It can also be set as the structure provided so that it may extend toward upper side or lower side along. In the configuration in which the bent extension portion 24b is provided so as to extend upward from the end portion, at least a part of the main body portion 24a and at least a part of the bent extension portion 24b are both embedded in the insulating resin 5. It becomes composition. Further, in the configuration in which the bent extension portion 24b is provided so as to extend downward from the end portion, only a part or all of the bent extension portion 24b can be embedded in the insulating resin 5. In addition, it is possible to adopt a configuration in which all of the bent extension portion 24b and at least a part of the main body portion 24a are both buried in the insulating resin 5.

(7)上記の実施形態では、本体部分24aが、第二接合部22から高さ方向Hに沿って下方に延びるように形成された構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、本体部分24aが、第二接合部22から高さ方向Hに対して傾斜して交差する方向に沿って延び、素子配置面11側(下側)へ向かうに従って基準方向Sのいずれか一方側へ向かうように設けられた構成とすることもできる。 (7) In the above embodiment, the configuration in which the main body portion 24a is formed to extend downward from the second joint portion 22 along the height direction H has been described as an example. However, the embodiment of the present invention is not limited to this, and the main body portion 24a extends from the second bonding portion 22 along the direction intersecting with the height direction H so as to cross the element placement surface 11. It can also be set as the structure provided so that it might go to either one side of the reference | standard direction S as it goes to the side (lower side).

(8)上記の実施形態では、絶縁樹脂5の表面が、高さ方向Hにおいてスイッチング素子2及びダイオード素子3に対して素子配置面11とは反対側に位置する構成、すなわち、半導体素子が絶縁樹脂5に埋没した構成を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、スイッチング素子2やダイオード素子3、或いは、素子配置面11に配置されるその他の半導体素子(回路素子)の少なくとも何れかの表面が、絶縁樹脂5の表面より上方に位置する構成とすることもできる。 (8) In the above embodiment, the surface of the insulating resin 5 is positioned on the side opposite to the element placement surface 11 with respect to the switching element 2 and the diode element 3 in the height direction H, that is, the semiconductor element is insulated. The configuration buried in the resin 5 has been described as an example. However, the embodiment of the present invention is not limited to this, and the surface of at least one of the switching element 2, the diode element 3, or other semiconductor elements (circuit elements) arranged on the element arrangement surface 11 is not limited. In addition, it may be configured to be positioned above the surface of the insulating resin 5.

(9)上記の実施形態では、基準方向Sが、基板10に配置されるスイッチング素子2とダイオード素子3の配列方向と一致する構成を例として説明したが、基準方向Sは、素子配置面11に沿った任意の方向(例えば、上記配列方向に直交する方向)に設定することができる。 (9) In the above embodiment, the configuration in which the reference direction S coincides with the arrangement direction of the switching elements 2 and the diode elements 3 arranged on the substrate 10 has been described as an example. Can be set in an arbitrary direction along the line (for example, a direction orthogonal to the arrangement direction).

(10)上記の実施形態では、半導体装置1がインバータモジュールを構成するスイッチングモジュールである場合を例として説明した。しかし、本発明の実施形態はこれに限定されるものではなく、基板に配置された半導体素子と接続部材とを電気的に接続する接続端子を備えるあらゆる半導体装置に本発明を適用することができる。また、本発明を、回路素子として半導体素子を備えない電気回路装置に適用することも可能である。 (10) In the above embodiment, the case where the semiconductor device 1 is a switching module constituting an inverter module has been described as an example. However, the embodiment of the present invention is not limited to this, and the present invention can be applied to any semiconductor device including a connection terminal that electrically connects a semiconductor element arranged on a substrate and a connection member. . Further, the present invention can also be applied to an electric circuit device that does not include a semiconductor element as a circuit element.

(11)その他の構成に関しても、本明細書において開示された実施形態は全ての点で例示であって、本発明の実施形態はこれに限定されない。すなわち、本願の特許請求の範囲に記載された構成及びこれと均等な構成を備えている限り、特許請求の範囲に記載されていない構成の一部を適宜改変した構成も、当然に本発明の技術的範囲に属する。 (11) Regarding other configurations as well, the embodiments disclosed herein are illustrative in all respects, and embodiments of the present invention are not limited thereto. That is, as long as the configuration described in the claims of the present application and a configuration equivalent thereto are provided, a configuration obtained by appropriately modifying a part of the configuration not described in the claims is naturally also included in the present invention. Belongs to the technical scope.

本発明は、素子配置面に回路素子が配置された基板と、素子配置面に配置された導電性の接続端子と、素子配置面を覆うように設けられる絶縁樹脂と、を備えた電気回路装置に好適に利用することができる。   The present invention relates to an electric circuit device comprising: a substrate on which circuit elements are arranged on an element arrangement surface; conductive connection terminals arranged on the element arrangement surface; and an insulating resin provided so as to cover the element arrangement surface. Can be suitably used.

1:半導体装置(電気回路装置)
2:スイッチング素子(回路素子)
3:ダイオード素子(回路素子)
5:絶縁樹脂
10:基板
11:素子配置面
20:第一接続端子(接続端子)
21:第一接合部
22:第二接合部
23:連結部
24:延出部
24a:本体部分
24b:屈曲延在部分
41:バスバー(接続部材)
H:高さ方向
S:基準方向
1: Semiconductor device (electric circuit device)
2: Switching element (circuit element)
3: Diode element (circuit element)
5: Insulating resin 10: Substrate 11: Element arrangement surface 20: First connection terminal (connection terminal)
21: 1st junction part 22: 2nd junction part 23: Connection part 24: Extension part 24a: Main body part 24b: Bending extension part 41: Bus bar (connection member)
H: Height direction S: Reference direction

Claims (5)

素子配置面に回路素子が配置された基板と、前記素子配置面に配置された導電性の接続端子と、前記素子配置面を覆うように設けられる絶縁樹脂と、を備えた電気回路装置であって、
前記接続端子は、前記回路素子又は前記基板に接合される第一接合部と、前記第一接合部から前記素子配置面に直交する高さ方向に離間して設けられると共に導電性の接続部材に接合される第二接合部と、前記第一接合部と前記第二接合部における前記素子配置面に沿った所定の基準方向の一方側端部とを連結する連結部と、前記第二接合部における前記基準方向の他方側端部から前記素子配置面側へ向かって延びるように設けられた延出部と、を備え、
前記絶縁樹脂の表面が、前記高さ方向における前記延出部の前記素子配置面側の端部と前記第二接合部との間に位置する電気回路装置。
An electric circuit device comprising: a substrate on which circuit elements are arranged on an element arrangement surface; a conductive connection terminal arranged on the element arrangement surface; and an insulating resin provided so as to cover the element arrangement surface. And
The connection terminal is provided on the conductive connection member while being provided apart from the first joint portion to be joined to the circuit element or the substrate and in the height direction perpendicular to the element arrangement surface from the first joint portion. A second joining portion to be joined, a connecting portion for joining the first joining portion and one end portion in a predetermined reference direction along the element arrangement surface in the second joining portion, and the second joining portion An extending portion provided so as to extend from the other end portion in the reference direction toward the element arrangement surface side,
An electric circuit device in which a surface of the insulating resin is located between an end portion on the element arrangement surface side of the extending portion in the height direction and the second bonding portion.
前記延出部は、前記第二接合部から延びる本体部分と、当該本体部分における前記素子配置面側の端部から当該本体部分の延在方向に交差する方向に延びるように設けられた屈曲延在部分と、を備える請求項1に記載の電気回路装置。   The extending portion includes a main body portion extending from the second joint portion, and a bent extension provided so as to extend in a direction crossing the extending direction of the main body portion from an end portion of the main body portion on the element arrangement surface side. The electric circuit device according to claim 1, further comprising a current portion. 前記屈曲延在部分は、前記本体部分における前記素子配置面側の端部から前記基準方向における前記連結部側へ向かって延びるように設けられている請求項2に記載の電気回路装置。   The electric circuit device according to claim 2, wherein the bent extension portion is provided so as to extend from an end portion of the main body portion on the element arrangement surface side toward the connecting portion side in the reference direction. 前記絶縁樹脂の表面が、前記高さ方向において前記回路素子に対して前記素子配置面とは反対側に位置する請求項1から3のいずれか一項に記載の電気回路装置。   4. The electric circuit device according to claim 1, wherein a surface of the insulating resin is located on a side opposite to the element arrangement surface with respect to the circuit element in the height direction. 5. 前記第二接合部は、前記高さ方向における前記素子配置面側とは反対側から前記接続部材に押圧された状態で当該接続部材に接合される請求項1から4のいずれか一項に記載の電気回路装置。   The said 2nd junction part is joined to the said connection member in the state pressed by the said connection member from the opposite side to the said element arrangement surface side in the said height direction. Electric circuit device.
JP2010254966A 2010-11-15 2010-11-15 Electric circuit device Pending JP2012109303A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3503179A1 (en) * 2017-12-20 2019-06-26 Nexperia B.V. Electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3503179A1 (en) * 2017-12-20 2019-06-26 Nexperia B.V. Electronic device
US10658274B2 (en) 2017-12-20 2020-05-19 Nexperia B.V. Electronic device

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