JP2012108407A5

JP2012108407A5 -

Info

Publication number: JP2012108407A5
Application number: JP2010258642A
Authority: JP
Filing date: 2010-11-19
Publication date: 2013-11-14
Anticipated expiration: 2030-11-19

Description

本発明は、上述の課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。
本発明の一態様の電気光学装置は、ソース領域と、ドレイン領域と、チャネル領域と、前記ソース領域及び／または前記ドレイン領域と前記チャネル領域との間に配置された接合領域と、を含む半導体層と、前記半導体層を覆う第１絶縁膜と、前記第１絶縁膜を介して前記チャネル領域に対向する第１導電膜によるゲート電極と、前記ゲート電極を覆う第２絶縁膜を覆うように配置され、前記半導体層に電気的に接続された第２導電膜によるデータ線と、前記第２導電膜から前記半導体層へ向かう方向から見て、前記接合領域に沿うように前記第２絶縁膜に配置された開口と、前記開口の内部に、前記第１導電膜と前記第２導電膜とが配置されたことを特徴とする。
本発明の別の一態様の電気光学装置は、ソース領域と、ドレイン領域と、チャネル領域と、前記ソース領域及び／または前記ドレイン領域と前記チャネル領域との間に配置された接合領域と、を含む半導体層と、前記半導体層を覆う第１絶縁膜と、前記第１絶縁膜を介して前記チャネル領域に対向する第１導電膜によるゲート電極と、前記ゲート電極を覆う第２絶縁膜を覆うように配置され、前記半導体層に電気的に接続された第２導電膜と、前記第２導電膜から前記半導体層へ向かう方向から見て、前記接合領域に沿うように前記第２絶縁膜に配置された開口と、前記開口の内部に、前記第１導電膜と前記第２導電膜とが配置されたことを特徴とする。
本発明の一態様の電気光学装置の製造方法は、ソース領域と、ドレイン領域と、チャネル領域と、前記ソース領域及び／または前記ドレイン領域と前記チャネル領域との間に配置された接合領域と、を含む半導体層を形成する工程と、前記半導体層を覆う第１絶縁膜を形成する工程と、前記接合領域に沿うように前記第１絶縁膜に開口を形成する工程と、前記第１絶縁膜を介して前記チャネル領域に対向する第１導電膜によるゲート電極を形成する工程と、前記ゲート電極を覆う第２絶縁膜を形成する工程と、前記第１絶縁膜の開口に重なるように前記第２絶縁膜に開口を形成する工程と、前記ゲート電極を覆うように配置され、前記半導体層に電気的に接続された第２導電膜によるデータ線を形成する工程と、を含むことを特徴とする。
本発明の別の一態様の電気光学装置は、ソース領域と、ドレイン領域と、チャネル領域と、前記ソース領域及び／または前記ドレイン領域と前記チャネル領域との間に配置された接合領域と、を含む半導体層を形成する工程と、前記半導体層を覆う第１絶縁膜を形成する工程と、前記接合領域に沿うように前記第１絶縁膜に開口を形成する工程と、前記第１絶縁膜を介して前記チャネル領域に対向する第１導電膜によるゲート電極を形成する工程と、前記ゲート電極を覆う第２絶縁膜を形成する工程と、前記第１絶縁膜の開口に重なるように前記第２絶縁膜に開口を形成する工程と、前記ゲート電極を覆うように配置され、前記半導体層に電気的に接続された第２導電膜を形成する工程と、を含むことを特徴とする。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
An electro-optical device according to one embodiment of the present invention includes a source region, a drain region, a channel region, and a junction region disposed between the source region and / or the drain region and the channel region. A layer, a first insulating film covering the semiconductor layer, a gate electrode made of a first conductive film facing the channel region via the first insulating film, and a second insulating film covering the gate electrode A second conductive film disposed along the junction region as viewed from a direction from the second conductive film toward the semiconductor layer, and a data line formed by a second conductive film electrically connected to the semiconductor layer; And the first conductive film and the second conductive film are disposed inside the opening.
An electro-optical device according to another embodiment of the present invention includes a source region, a drain region, a channel region, and a junction region disposed between the source region and / or the drain region and the channel region. A semiconductor layer including the first insulating film covering the semiconductor layer; a gate electrode formed of a first conductive film facing the channel region through the first insulating film; and a second insulating film covering the gate electrode. A second conductive film electrically connected to the semiconductor layer and the second insulating film along the junction region when viewed from the second conductive film toward the semiconductor layer. The opening is disposed, and the first conductive film and the second conductive film are disposed in the opening.
A method for manufacturing an electro-optical device according to one embodiment of the present invention includes a source region, a drain region, a channel region, and a junction region disposed between the source region and / or the drain region and the channel region, Forming a semiconductor layer containing the semiconductor layer; forming a first insulating film covering the semiconductor layer; forming an opening in the first insulating film along the junction region; and the first insulating film Forming a gate electrode made of a first conductive film opposite to the channel region through the gate, forming a second insulating film covering the gate electrode, and overlapping the opening of the first insulating film. A step of forming an opening in the insulating film; and a step of forming a data line by a second conductive film disposed so as to cover the gate electrode and electrically connected to the semiconductor layer. To do .
An electro-optical device according to another embodiment of the present invention includes a source region, a drain region, a channel region, and a junction region disposed between the source region and / or the drain region and the channel region. A step of forming a semiconductor layer, a step of forming a first insulating film covering the semiconductor layer, a step of forming an opening in the first insulating film along the junction region, and the first insulating film. A step of forming a gate electrode made of a first conductive film facing the channel region, a step of forming a second insulating film covering the gate electrode, and the second insulating film so as to overlap the opening of the first insulating film. A step of forming an opening in the insulating film; and a step of forming a second conductive film disposed so as to cover the gate electrode and electrically connected to the semiconductor layer.

Claims

A source region, a drain region, a channel region, a semiconductor layer including a junction region disposed between the source region and / or the drain region and the channel region,
A first insulating film covering the semiconductor layer;
A gate electrode made of a first conductive film facing the channel region through the first insulating film ;
A data line formed of a second conductive film disposed to cover the second insulating film covering the gate electrode and electrically connected to the semiconductor layer;
An opening disposed in the second insulating film along the junction region as seen from the direction from the second conductive film toward the semiconductor layer ;
An electro-optical device, wherein the first conductive film and the second conductive film are disposed inside the opening .

A source region, a drain region, a channel region, a semiconductor layer including a junction region disposed between the source region and / or the drain region and the channel region,
A first insulating film covering the semiconductor layer;
A gate electrode made of a first conductive film facing the channel region through the first insulating film ;
A second conductive film disposed to cover the second insulating film covering the gate electrode and electrically connected to the semiconductor layer;
An opening disposed in the second insulating film along the junction region as seen from the direction from the second conductive film toward the semiconductor layer ;
An electro-optical device, wherein the first conductive film and the second conductive film are disposed inside the opening .

The electro-optical device according to claim 1, wherein the first conductive film and the second conductive film disposed inside the opening block light directed toward the semiconductor layer.

The electro-optical device according to claim 1, wherein the opening penetrates the second insulating film.

The electro-optical device according to claim 4, wherein the opening further penetrates the first insulating film.

6. The electro-optical device according to claim 1, wherein a third insulating film is disposed between the first conductive film and the second conductive film.

6. The electro-optical device according to claim 1, wherein the first conductive film and the second conductive film are disposed so as to be in contact with each other .

The opening is viewed from the direction toward the semiconductor layer from the second conductive layer, an electro-optical device according to any one of claims 1 to 7, characterized in that it is arranged so as to sandwich the bonding region.

9. The electro-optical device according to claim 1, wherein a material of the first conductive film and a material of the second conductive film are different .

A source region, a drain region, and forming a channel region, the semiconductor layer comprising a junction region disposed between the source region and / or the drain region and the channel region,
Forming a first insulating film covering the semiconductor layer;
Forming an opening in the first insulating film along the bonding region;
Forming a gate electrode made of a first conductive film facing the channel region through the first insulating film ;
Forming a second insulating film covering the gate electrode ;
Forming an opening in the second insulating film so as to overlap the opening of the first insulating film;
Forming a data line by a second conductive film disposed so as to cover the gate electrode and electrically connected to the semiconductor layer;
A method for manufacturing an electro-optical device.

A source region, a drain region, and forming a channel region, the semiconductor layer comprising a junction region disposed between the source region and / or the drain region and the channel region,
Forming a first insulating film covering the semiconductor layer;
Forming an opening in the first insulating film along the bonding region;
Forming a gate electrode made of a first conductive film facing the channel region through the first insulating film ;
Forming a second insulating film covering the gate electrode ;
Forming an opening in the second insulating film so as to overlap the opening of the first insulating film;
Forming a second conductive film disposed to cover the gate electrode and electrically connected to the semiconductor layer;
A method for manufacturing an electro-optical device.

The method further comprises the step of forming a third insulating film that covers the first conductive film after the step of forming the opening in the second insulating film so as to overlap the opening of the first insulating film. A method for manufacturing the electro-optical device according to 10 or 11.

The second conductive film is aluminum;
The method of manufacturing an electro-optical device according to claim 10 , further comprising a step of heating the second conductive film to near a melting point.

And as factories of forming a fourth insulating film covering the front Stories second insulating film,
Forming a through hole penetrating through the first insulating film and said second insulating film and said fourth insulating film to a position overlapping the drain region,
Forming a third conductive film to cover the front Symbol third insulating film,
Patterning the third conductive film to form a conductive portion that electrically connects the drain region and the pixel electrode;
The method of manufacturing an electro-optical device according to claim 10 , further comprising :

Electrons, characterized in that it comprises an electro-optical device manufactured using the manufacturing method of the electro-optical device according to the electro-optical device, or any one of claims 10 to 14 according to any one of claims 1 to 9 machine.