JP2012074969A - Package manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package manufacturing method that maintains a satisfactory degree of vacuum in a package, to provide a piezoelectric vibrator manufactured by the package manufacturing method, and to provide an oscillator, an electronic device, and a radio-controlled timepiece which have the piezoelectric vibrator.SOLUTION: A method for manufacturing a piezoelectric vibrator (package) by anodically bonding a bonding film 35 (bonding material) formed on an inner surface of a lid substrate wafer 50 (a first substrate) and an inner surface of a base substrate wafer 40 (a second substrate) includes: a preheating step S60 of heating the lid substrate wafer 50 and the base substrate wafer 40 by having a first heater 71 and a second heater 72 respectively brought into contact with outer surfaces of the lid substrate wafer 50 and the base substrate wafer 40; and an anodic bonding step S70 of anodically bonding the lid substrate wafer 50 and the base substrate wafer 40 with the bonding film 35 and the base substrate wafer 40 serving as an anode and a cathode, respectively. The preheating step S60 is performed with the lid substrate wafer 50 superposed on the base substrate wafer 40 through spacers 75 that are placed between the bonding film 35 and the base substrate wafer 40.

Description

  The present invention relates to a package manufacturing method, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  For example, a cellular phone or a portable information terminal uses a piezoelectric vibrator using crystal or the like as a time source, a timing source such as a control signal, or a reference signal source. Various types of piezoelectric vibrators of this type are known. As one of them, a two-layer structure type surface mount type piezoelectric vibrator is known.

  This type of piezoelectric vibrator has a two-layer structure that is packaged by directly bonding the first substrate and the second substrate, and the electronic components are housed in a cavity formed between the two substrates. Has been. As one of such two-layer structure type packages, a through hole is provided in a substrate (corresponding to the “second substrate” in the present application), and the inner surface of the through hole and the upper and lower surfaces around the through hole or any portion thereof are provided. There is known a quartz component (corresponding to “crystal oscillator” of the present application) in which a metal for wiring is formed and an alloy is welded to the through hole to form an airtight terminal (corresponding to “through electrode” of the present application) (for example, Patent Document 1).

  This crystal component is obtained by bonding a tuning fork type crystal piece (corresponding to the “crystal vibrating piece” of the present application) to the substrate, and then anodic bonding the lid (corresponding to “first substrate” of the present application) and the substrate. The piece is hermetically sealed. Specifically, a metal film for anodic bonding is formed on the lid, and a DC voltage of several hundred volts is applied between the metal film and the substrate made of a glass material to perform anodic bonding in a vacuum or in an inert gas. is doing.

  Here, in general, the piezoelectric vibrator is desired to have a lower equivalent resistance value (effective resistance value, Re). Since the piezoelectric vibrator having a low equivalent resistance value can vibrate the piezoelectric vibrating piece with low power, it becomes a high-quality piezoelectric vibrator with high energy efficiency. It is known that the equivalent resistance value can be kept lower as the inside of the package in which the piezoelectric vibrating piece is sealed is closer to a vacuum.

JP-A-6-283951

  By the way, when the first substrate and the second substrate are anodically bonded, it is known that the temperature at which the mobile cation contained in the glass of each substrate is easy to move is about 200 ° C. to 250 ° C. Yes. Therefore, the anodic bonding is performed by heating each substrate so that the temperature of each of the first substrate and the second substrate (hereinafter referred to as “bonding temperature”) during anodic bonding is about 200 ° C. to 250 ° C. ing.

  Here, the glass material of each substrate usually contains organic matter, moisture, and the like. In particular, when the glass frit is fired to form the through electrode, the organic solvent may remain in the fired glass frit. For this reason, when each substrate is heated, organic materials, moisture, and the like in the glass material and glass frit of each substrate are released as outgas. Therefore, when each substrate is heated to the bonding temperature at the time of anodic bonding, outgas from each substrate is released into the package, and the degree of vacuum in the package may be reduced.

  Accordingly, the present invention provides a method for manufacturing a package that can ensure a good degree of vacuum in the package, a piezoelectric vibrator manufactured by the method for manufacturing the package, an oscillator having the piezoelectric vibrator, an electronic device, and a radio timepiece. Let it be an issue.

In order to solve the above problems, a package manufacturing method of the present invention is a package manufacturing method for manufacturing a package by anodic bonding a bonding material formed on an inner surface of a first substrate and an inner surface of a second substrate. A first heater having a set temperature T ₁ is brought into contact with an outer surface of the first substrate, and a second heater having a set temperature T ₂ is brought into contact with an outer surface of the second substrate. A preheating step for heating the substrate; a voltage is applied using the bonding material of the first substrate as an anode and the second substrate as a cathode; the first substrate is set to a bonding temperature F _1; and the second substrate is bonded An anodic bonding step of bonding the first substrate and the second substrate as the temperature F ₂ , wherein the preheating step is performed between the bonding material of the first substrate and the second substrate. A spacer is disposed, and the first group is interposed through the spacer. And performing in a laminated state and the second substrate and.

  According to the present invention, by performing the preheating step, outgas can be released before the anodic bonding step. At that time, since the preheating step is performed by arranging a spacer between the bonding material of the first substrate and the second substrate, the outgas released from each substrate by the preheating step is the first formed by the spacer. From the gap between the first substrate and the second substrate, the light is discharged to the outside of each substrate. Thereby, since it can suppress that outgas is discharge | released in a package in an anodic bonding process, the favorable vacuum degree in a package is securable.

The arbitrary temperature of the first heater when the first heater is set at an arbitrary temperature t ₁ and the second heater is set at an arbitrary temperature t ₂ under the same conditions as in the preheating step. difference alpha ₁ of t ₁ and the actual temperature f ₁ of the first substrate, and the arbitrary temperature t ₂ the difference alpha ₂ between the actual temperature f ₂ of the second substrate of the second heater measured in advance the preheating set temperature T ₁ of the first heater of the process, and the set temperature T ₂ of the second heater, T _1> F ₁ + alpha ₁ and,, T _2> F ₂ + alpha _2, so as to satisfy the It is desirable that it is set.

According to the present invention, the set temperature T ₁ of the first heater in the preheating step is the difference between the first substrate bonding temperature F ₁ and the first heater optional temperature t ₁ and the first substrate actual temperature f _1. The temperature is higher than the temperature to which α ₁ is added. The set temperature T ₂ of the second heater in the preheating step is obtained by adding a difference α ₂ between the arbitrary temperature t ₂ of the second heater and the actual temperature f _{2 of} the second substrate to the bonding temperature F ₂ of the second substrate. The temperature is higher than the specified temperature. As a result, the actual temperature of each substrate in the preheating process is higher than the bonding temperatures F ₁ and F ₂ of each substrate in the anodic bonding process. Therefore, it is possible to reliably prevent outgas from being released into the package in the anodic bonding process, and to secure a better degree of vacuum in the package.

Further, the discharge temperature of the first substrate when outgassing is released from the first substrate and K _1, the release temperature of the second substrate when outgassing is released from the second substrate was K ₂ when the preheating temperature setting T ₁ of the first heater of the process, and the set temperature T ₂ of the second heater, T _1> K ₁ + alpha ₁ and,, T _2> K ₂ + alpha _2, to meet the It is desirable to be set to.

According to the present invention, the set temperature T ₁ of the first heater in the preheating step is the discharge temperature K ₁ at which the outgas is released from the first substrate, the arbitrary temperature t ₁ of the first heater, and the actual temperature of the first substrate. The temperature is higher than the temperature obtained by adding the difference α ₁ to f ₁ . In addition, the set temperature T ₂ of the second heater in the preheating process is equal to the discharge temperature K ₂ at which the outgas is released from the second substrate, the arbitrary temperature t ₂ of the second heater, and the actual temperature f ₂ of the second substrate. The temperature is higher than the temperature obtained by adding the difference α ₂ . As a result, the actual temperature of each substrate in the preheating step is higher than the respective release temperatures K ₁ and K ₂ from which the outgas is released from each substrate, so that the outgas can be released from each substrate. Therefore, it is possible to reliably prevent the outgas from being released into the package during the anodic bonding process and when the package is used after completion, and to secure a better degree of vacuum in the package.

Moreover, the piezoelectric vibrator of the present invention is characterized in that a piezoelectric vibrating piece is enclosed in the package manufactured by the above-described package manufacturing method.
According to the present invention, since the piezoelectric vibrating piece is enclosed in the package that can ensure a good degree of vacuum, a piezoelectric vibrator having excellent electrical characteristics can be provided.

The oscillator according to the present invention is characterized in that the above-described piezoelectric vibrator is electrically connected to an integrated circuit as an oscillator.
The electronic apparatus according to the present invention is characterized in that the above-described piezoelectric vibrator is electrically connected to a time measuring unit.
The radio-controlled timepiece of the present invention is characterized in that the above-described piezoelectric vibrator is electrically connected to a filter unit.

  According to the oscillator, electronic device, and radio timepiece of the present invention, since the piezoelectric vibrator having excellent electrical characteristics is provided, a high-performance oscillator, electronic device, and radio timepiece can be provided.

  According to the present invention, by performing the preheating step, outgas can be released before the anodic bonding step. At that time, since the preheating step is performed by arranging a spacer between the bonding material of the first substrate and the second substrate, the outgas released from each substrate by the preheating step is the first formed by the spacer. From the gap between the first substrate and the second substrate, the light is discharged to the outside of each substrate. Thereby, since it can suppress that outgas is discharge | released in a package in an anodic bonding process, the favorable vacuum degree in a package is securable.

It is an external appearance perspective view which shows a piezoelectric vibrator. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a plan view with a lid substrate removed. It is sectional drawing in the AA of FIG. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a flowchart of the manufacturing method of a piezoelectric vibrator. It is a disassembled perspective view of a wafer body. It is a side view when each wafer for substrates is set among preheating processes. It is a top view when setting each wafer for substrates among preheating processes. It is explanatory drawing of an anodic bonding process. It is a block diagram which shows one Embodiment of an oscillator. It is a lineblock diagram showing one embodiment of electronic equipment. It is a block diagram which shows one Embodiment of a radio timepiece.

(Piezoelectric vibrator)
Hereinafter, a piezoelectric vibrator according to an embodiment of the present invention will be described with reference to the drawings.
In the following description, the first substrate will be described as a lid substrate wafer, and the second substrate will be described as a base substrate wafer. Further, the description will be made assuming that the bonding surface of the base substrate of the package (piezoelectric vibrator) with the lid substrate is the upper surface U and the outer surface of the base substrate is the lower surface L.
FIG. 1 is an external perspective view of a piezoelectric vibrator.
FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a plan view with the lid substrate removed.
3 is a cross-sectional view taken along line AA in FIG.
FIG. 4 is an exploded perspective view of the piezoelectric vibrator shown in FIG.
In FIG. 4, illustration of excitation electrodes 13 and 14, extraction electrodes 19 and 20, mount electrodes 16 and 17, and weight metal film 21, which will be described later, is omitted for easy understanding of the drawing.
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 of this embodiment is housed in a package 9 in which a base substrate 2 and a lid substrate 3 are anodically bonded via a bonding film 35, and a cavity 3 a of the package 9. The surface mount type piezoelectric vibrator 1 including the piezoelectric vibrating piece 4.

(Piezoelectric vibrating piece)
The piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied. The piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions 10. , 11 and groove portions 18 formed on both main surfaces. The groove portion 18 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle along the longitudinal direction of the vibrating arm portions 10 and 11.

  The excitation electrodes 13 and 14 and the extraction electrodes 19 and 20 are formed of a single layer film of chromium (Cr), which is the same material as the underlayer of the mount electrodes 16 and 17 described later. Thus, the excitation electrodes 13 and 14 and the extraction electrodes 19 and 20 can be formed simultaneously with the formation of the underlying layers of the mount electrodes 16 and 17.

  The excitation electrodes 13 and 14 are electrodes that vibrate the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. The first excitation electrode 13 and the second excitation electrode 14 are formed by patterning on the outer surfaces of the pair of vibrating arm portions 10 and 11 while being electrically separated from each other.

  The mount electrodes 16 and 17 are laminated films of Cr and gold (Au), and a Cr film having good adhesion to crystal is formed as an underlayer, and then a thin film of Au is formed on the surface as a finishing layer. It is formed by.

  A weight metal film 21 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11. The weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted. By adjusting the frequency using the coarse adjustment film 21a and the fine adjustment film 21b, the frequency of the pair of vibrating arm portions 10 and 11 can be kept within the range of the nominal frequency of the device.

(package)
As shown in FIGS. 1 to 4, the base substrate 2 and the lid substrate 3 are anodic bondable substrates made of a glass material, for example, soda-lime glass, and are formed in a substantially plate shape. A cavity 3 a for accommodating the piezoelectric vibrating reed 4 is formed on the side of the lid substrate 3 that is bonded to the base substrate 2.

  A bonding film 35 (bonding material) for anodic bonding is formed on the entire bonding surface side of the lid substrate 3 with the base substrate 2. That is, the bonding film 35 is formed in the frame area around the cavity 3a in addition to the entire inner surface of the cavity 3a. Although the bonding film 35 of this embodiment is formed of aluminum (Al), the bonding film 35 can also be formed of silicon (Si), Cr, or the like. As will be described later, the bonding film 35 and the base substrate 2 are anodically bonded, and the cavity 3a is vacuum-sealed.

  As shown in FIG. 3, the piezoelectric vibrator 1 includes through electrodes 32 and 33 that penetrate the base substrate 2 in the thickness direction and conduct the inside of the cavity 3 a and the outside of the piezoelectric vibrator 1. The through electrodes 32 and 33 are disposed in the through holes 30 and 31 that penetrate the base substrate 2, and the metal pins 7 that electrically connect the piezoelectric vibrating reed 4 and the outside, the through holes 30 and 31, and the metal And a cylindrical body 6 filled between the pins 7. In the following description, the through electrode 32 is described as an example, but the same applies to the through electrode 33. The electrical connection of the through electrode 33, the routing electrode 37 and the external electrode 39 is the same as that of the through electrode 32, the routing electrode 36 and the external electrode 39.

As shown in FIG. 3, the through hole 30 is formed so that the inner shape gradually increases from the upper surface U side to the lower surface L side, and the cross-sectional shape including the central axis O of the through hole 30 is tapered. It is formed as follows.
The metal pin 7 is a conductive rod-like member made of a metal material such as silver (Ag), Ni alloy, or Al, and is formed by forging or pressing. The metal pin 7 is preferably formed of a metal having a linear expansion coefficient close to that of the glass material of the base substrate 2, for example, an alloy (42 alloy) containing 58 weight percent of iron (Fe) and 42 weight percent of Ni.
The cylinder 6 is obtained by baking paste-like glass frit. At the center of the cylinder 6, a metal pin 7 is arranged so as to penetrate the cylinder 6, and the cylinder 6 is firmly fixed to the metal pin 7 and the through hole 30.

  A pair of lead-out electrodes 36 and 37 are patterned on the upper surface U side of the base substrate 2. Further, taper-shaped bumps B made of Au or the like are formed on the pair of lead-out electrodes 36 and 37, respectively, and the pair of mount electrodes of the piezoelectric vibrating piece 4 is mounted using the bumps B. Thereby, one mount electrode 16 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 32 through one routing electrode 36, and the other mount electrode 17 is passed through the other routing electrode 37 to the other penetration electrode. The electrode 33 is electrically connected.

  A pair of external electrodes 38 and 39 are formed on the lower surface L of the base substrate 2. The pair of external electrodes 38 and 39 are formed at both ends in the longitudinal direction of the base substrate 2, and are electrically connected to the pair of through electrodes 32 and 33, respectively.

  When the piezoelectric vibrator 1 configured in this way is operated, a predetermined drive voltage is applied to the external electrodes 38 and 39 formed on the base substrate 2. As a result, a voltage can be applied to the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4, so that the pair of vibrating arm portions 10 and 11 are moved toward and away from each other at a predetermined frequency. Can be vibrated. The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a timing source for control signals, a reference signal source, and the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the above-described piezoelectric vibrator will be described with reference to a flowchart.
FIG. 5 is a flowchart of the manufacturing method of the piezoelectric vibrator of this embodiment.
FIG. 6 is an exploded perspective view of the wafer body 60. In addition, the dotted line shown in FIG. 6 has shown the cutting line M cut | disconnected by the cutting process performed later.
The piezoelectric vibrator manufacturing method according to the present embodiment mainly includes a piezoelectric vibrating piece manufacturing step S10, a lid substrate wafer manufacturing step S20, a base substrate wafer manufacturing step S30, and an assembly step (S50 and subsequent steps). is doing. Among these steps, the piezoelectric vibrating piece producing step S10, the lid substrate wafer producing step S20 and the base substrate wafer producing step S30 can be carried out in parallel.

(Piezoelectric vibrating piece manufacturing step S10)
In the piezoelectric vibrating piece producing step S10, the piezoelectric vibrating piece 4 is produced. Specifically, first, a crystal Lambert ore is sliced at a predetermined angle and subjected to mirror polishing such as polishing to obtain a wafer having a predetermined thickness. Subsequently, patterning is performed on the outer shape of the piezoelectric vibrating piece 4 by a photolithography technique, and a metal film is formed and patterned, so that the excitation electrodes 13 and 14, the extraction electrodes 19 and 20, the mount electrodes 16 and 17, and the weight metal A film 21 is formed. Thereafter, the resonance frequency of the piezoelectric vibrating piece 4 is roughly adjusted. Thus, the piezoelectric vibrating piece producing step S10 is completed.

(Lid substrate wafer manufacturing step S20)
In the lid substrate wafer manufacturing step S20, a lid substrate wafer 50 (corresponding to “first substrate” in the claims) to be a lid substrate later is manufactured. First, the disc-shaped lid substrate wafer 50 made of soda-lime glass is polished and washed to a predetermined thickness, and then the outermost work-affected layer is removed by etching or the like (S21). Next, in the cavity forming step S22, a plurality of cavities 3a are formed on the bonding surface of the lid substrate wafer 50 to the base substrate wafer 40. The cavity 3a is formed by hot press molding or etching. Next, in the bonding surface polishing step S23, the bonding surface with the base substrate wafer 40 is polished.

  Next, in the bonding film forming step S24, a bonding film 35 (see FIG. 3) made of Al is formed on a bonding surface with a base substrate wafer 40 (corresponding to “second substrate” in the claims) described later. The bonding film 35 may be formed on the entire inner surface of the cavity 3 a in addition to the bonding surface with the base substrate wafer 40. Thereby, the patterning of the bonding film 35 becomes unnecessary, and the manufacturing cost can be reduced. The bonding film 35 can be formed by a film forming method such as sputtering or CVD. In addition, since the bonding surface polishing step S23 is performed before the bonding film forming step S24, the flatness of the surface of the bonding film 35 is ensured, and stable bonding with the base substrate wafer 40 can be realized.

(Base substrate wafer manufacturing step S30)
In the base substrate wafer manufacturing step S30, a base substrate wafer 40 to be a base substrate later is manufactured. First, the disc-shaped base substrate wafer 40 made of soda-lime glass is polished and washed to a predetermined thickness, and then the work-affected layer on the outermost surface is removed by etching or the like (S31).

(Penetration electrode forming step S32)
Next, a through electrode forming step S32 for forming a pair of through electrodes 32 on the base substrate wafer 40 is performed. In addition, although the formation process of the penetration electrode 32 is demonstrated below, the formation process of the penetration electrode 33 is also the same.

  First, the through hole 30 is formed by pressing or the like from the lower surface L to the upper surface U of the base substrate wafer 40. Next, the metal pin 7 is inserted into the through hole 30 and filled with glass frit. The glass frit is mainly composed of powdery glass particles, an organic solvent, and a binder (fixing agent).

Subsequently, the glass frit is fired to integrate the glass cylinder 6, the through hole 30, and the metal pin 7. For example, the glass frit is baked after the base substrate wafer 40 is transferred to a baking furnace. At this time, the organic solvent, binder, etc. inside the glass frit evaporate, and outgas such as carbon monoxide (CO), carbon dioxide (CO ₂ ), and water vapor (H ₂ O) is generated and released to the outside of the glass frit. Is done.

  Finally, the upper surface U and the lower surface L of the base substrate wafer 40 are polished to form a flat surface while exposing the metal pins 7 to the upper surface U and the lower surface L, thereby forming the through electrode 32 in the through hole 30. . The through electrode 32 ensures the conductivity between the upper surface U side and the lower surface L side of the base substrate wafer 40, and at the same time, can seal the through hole 30 of the base substrate wafer 40.

(Leading electrode forming step S33)
Next, a routing electrode forming step S33 is performed in which a plurality of routing electrodes 36 and 37 electrically connected to the through electrodes are formed on the upper surface U. Further, tapered bumps made of Au or the like are formed on the routing electrodes 36 and 37, respectively. In FIG. 6, the illustration of the bumps is omitted for easy viewing of the drawing. At this point, the base substrate wafer manufacturing step S30 ends.

(Mounting step S50)
Next, a mounting step S50 is performed in which the piezoelectric vibrating reed 4 is bonded onto the routing electrodes 36 and 37 of the base substrate wafer 40 via the bumps B. Specifically, the base portion 12 of the piezoelectric vibrating piece 4 is placed on the bump B, and ultrasonic vibration is applied while pressing the piezoelectric vibrating piece 4 against the bump B while heating the bump B to a predetermined temperature. As a result, as shown in FIG. 3, the base 12 is mechanically fixed to the bump B in a state where the vibrating arms 10 and 11 of the piezoelectric vibrating piece 4 are lifted from the upper surface U of the base substrate wafer 40.

(Preheating step S60)
Subsequently, prior to the anodic bonding step S70, a preheating step S60 for preheating the lid substrate wafer 50 and the base substrate wafer 40 is performed. The preheating step S60 includes a setting step S61 for setting the lid substrate wafer 50 and the base substrate wafer 40 in the vacuum chamber, each wafer heating step for preheating the lid substrate wafer 50 and the base substrate wafer 40, have.
In the preheating step S60, the organic solvent, binder, moisture and the like remaining in the lid substrate wafer 50 and the base substrate wafer 40 are evaporated by preheating, and carbon monoxide (CO) or carbon dioxide (CO ₂ ). ), Outgas such as water vapor (H ₂ O) is released. In the anode bonding step S70 described later, even when the lid substrate wafer 50 and the base substrate wafer 40 rise to the bonding temperature, the outgas is suppressed from being released.

(Set process S61)
FIG. 7 is a side view when each substrate wafer is set in the preheating step S60.
FIG. 8 is a plan view when each substrate wafer is set in the preheating step S60.
In order to make the drawings easy to understand, the size of the spacer 75 is exaggerated in each drawing. Further, in FIG. 8, illustration of the lid substrate wafer 50 and the first heater 71 is omitted.
First, as shown in FIGS. 7 and 8, in order to preheat the lid substrate wafer 50 and the base substrate wafer 40, the lid substrate wafer 50 and the base substrate are placed in the preheating chamber 67 a in the vacuum chamber 65. A setting step S61 for setting the wafer 40 is performed.

A vacuum pump P is connected to the vacuum chamber 65, and the pressure of the preheating chamber 67a can be adjusted by the vacuum pump P. In the vacuum chamber 65, an anodic bonding chamber 67b (see FIG. 9) is provided adjacent to the preheating chamber 67a, and the pressure in the anodic bonding chamber 67b can be adjusted in the same manner as the preheating chamber 67a. ing.
The preheating chamber 67 a is provided with a first heater 71 that heats the lid substrate wafer 50 and a second heater 72 that heats the base substrate wafer 40. A commercially available hot plate or the like is used for the first heater 71 and the second heater 72.

The lid substrate wafer 50 and the base substrate wafer 40 are set in the preheating chamber 67a in the following procedure.
First, the base substrate wafer 40 is disposed by bringing the lower surface L (outer surface) of the base substrate wafer 40 into contact with the upper surface 72 a of the second heater 72. A jig (not shown) is disposed on the upper surface 72 a of the second heater 72, and the base substrate wafer 40 is positioned with respect to the second heater 72.

Next, as shown in FIG. 8, the plurality of spacers 75 are arranged by bringing the lower surfaces 75 b of the plurality (two in this embodiment) of the spacers 75 into contact with the upper surface U of the base substrate wafer 40.
The spacer 75 is a flat plate member made of, for example, stainless steel and having a substantially rectangular shape in plan view. The spacer 75 has, for example, a width of about 10 mm, a length of about 30 to 50 mm, and a plate thickness of about 100 μm. The longitudinal direction of each spacer 75 is along the radial direction of the base substrate wafer 40, and the spacer 75 is formed so that the angle formed by the two spacers 75 and the center of the base substrate wafer 40 is about 120 degrees, for example. Deploy. In addition, the spacer 75 is disposed on the outer diameter side of the cutting line M so that the lead-out electrodes 36 and 37 and the like formed on the upper surface U of the base substrate wafer 40 are not damaged by the spacer 75.

  Subsequently, the lid substrate wafer 50 is disposed by bringing the bonding film 35 of the lid substrate wafer 50 into contact with the upper surface 75 a of the spacer 75. At this time, the spacer 75 is sandwiched between the base substrate wafer 40 and the lid substrate wafer 50. Here, since the spacer 75 has a thickness of about 100 μm, the thickness of the spacer 75 is substantially the same between the upper surface U of the base substrate wafer 40 and the bonding film 35 of the lid substrate wafer 50. A gap G is formed.

  Finally, the first heater 71 is disposed by bringing the lower surface 71 b of the first heater 71 into contact with the upper surface 50 a (outer surface) of the lid substrate wafer 50. A jig (not shown) is disposed on the lower surface 71 b of the first heater 71, and the lid substrate wafer 50 is positioned with respect to the first heater 71. Thus, the setting process S61 of the lid substrate wafer 50 and the base substrate wafer 40 is completed.

(Each wafer heating process S63)
Subsequently, each wafer heating step S <b> 63 is performed in which the first heater 71 heats the lid substrate wafer 50 and the second heater 72 heats the base substrate wafer 40. Each wafer heating step S63, under vacuum, the set temperature of the first heater 71 is abutted against the upper surface 50a of the lid substrate wafer 50 as T _1, the base substrate wafer a set temperature of the second heater 72 as T ₂ 40 is in contact with the lower surface L.

By the way, in preheating process S60, it aims at suppressing generating of outgas in the below-mentioned anodic bonding process S70 by discharging outgas to the exterior of lid substrate wafer 50 and base substrate wafer 40. Yes. Therefore, the actual temperature of the lid substrate wafer 50 in the preheating step S60 needs to surely exceed the bonding temperature F ₁ of the lid substrate wafer 50 in the anodic bonding step S70. Similarly, in the preheating step S60, the actual temperature of the base substrate wafer 40, is required above ensures bonding temperature F ₂ of the base substrate wafer 40 at the anode bonding process S70.

Here, in the preheating step S <b> 60, the spacer 75 is disposed between the lid substrate wafer 50 and the base substrate wafer 40. As a result, a gap G is formed between the lid substrate wafer 50 and the base substrate wafer 40, so that the heat of the lid substrate wafer 50 and the base substrate wafer 40 may be radiated from the gap G. For this reason, the actual temperature of the lid substrate wafer 50 in the preheating step S60 is significantly lower than T ₁ which is the set temperature of the first heater 71, and the bonding temperature F ₁ of the lid substrate wafer 50 in the anodic bonding step S70. May fall below In addition, the actual temperature of the base substrate wafer 40 in the preheating step S60 is significantly lower than T ₂ that is the set temperature of the second heater 72, and may be lower than the bonding temperature F ₂ . For this reason, in the preheating step S60, the outgas is not sufficiently released to the outside of the lid substrate wafer 50 and the base substrate wafer 40, and the outgas may be released in the anodic bonding step S70.

Therefore, it is desirable to measure in advance the difference between the temperature of each heater and the actual temperature of each substrate, and to determine the set temperature of each heater in the preheating step in consideration of this difference. Specifically, the difference α ₁ between the arbitrary temperature t ₁ of the first heater 71 and the actual temperature f ₁ of the lid substrate wafer 50, and the arbitrary temperature t ₂ of the second heater 72 and the actual temperature of the base substrate wafer 40. The difference α ₂ with respect to f ₂ is measured in advance.

The measurement of the difference α ₁ and the difference α ₂ is performed by the following procedure independently of each manufacturing process of the piezoelectric vibrator 1. The measurement of the difference α ₁ and the difference α ₂ is performed under the same conditions as in the preheating step S60. That is, the spacer 75 is disposed between the lid substrate wafer 50 and the base substrate wafer 40 to form the gap G. Then, under a vacuum, the difference α ₁ and the difference α _{2 with} the first heater 71 in contact with the upper surface 50 a of the lid substrate wafer 50 and the second heater 72 in contact with the lower surface L of the base substrate wafer 40. Is measured.

First, as in the setting step S61 described above, the lid substrate wafer 50 and the base substrate wafer 40 are set in the preheating chamber 67a in the vacuum chamber 65 (see FIG. 7).
Subsequently, under pressure, the lid substrate wafer 50 is heated with the first heater 71 at the arbitrary temperature t ₁ , and the base substrate wafer 40 is heated with the second heater 72 at the arbitrary temperature t ₂ . Here, thermocouples (not shown) are embedded in the lid substrate wafer 50 and the base substrate wafer 40, respectively, and the actual temperatures of the lid substrate wafer 50 and the base substrate wafer 40 are measured by each thermocouple. Is done. Then, α ₁ is calculated from the difference between the arbitrary temperature t ₁ of the first heater 71 and the thermocouple embedded in the lid substrate wafer 50, and is embedded in the arbitrary temperature t ₂ of the second heater 72 and the base substrate wafer 40. Α ₂ is calculated from the difference from the measured thermocouple. As an example, when the arbitrary temperature t ₁ = 420 ° C., the actual temperature f ₁ of the lid substrate wafer 50 is 330 ° C., and the difference α ₁ = 90 ° C. Further, the differences α ₁ and α ₂ are substantially constant regardless of the set temperature of each heater.

Set temperature T ₂ of the set temperature T _1, and the second heater 72 of the first heater 71 in each wafer heating step S63, taking into account the difference alpha ₁ and alpha ₂ described above,
T ₁ > F ₁ + α ₁ (1) and T ₂ > F ₂ + α ₂ (2)
It is set to satisfy. As an example, when the bonding temperature F ₁ of the lid substrate wafer 50 is 200 ° C., the set temperature T ₁ = 290 ° C.

The set temperature T ₁ of the first heater 71 in each wafer heating step S 63 is equal to the bonding temperature F ₁ of the lid substrate wafer 50, the arbitrary temperature t ₁ of the first heater 71, and the actual temperature f ₁ of the lid substrate wafer 50. is set to a temperature higher than the difference alpha ₁ temperature was added. Here, as described above, the difference α ₁ is substantially constant regardless of the set temperature of the first heater 71. Therefore, by satisfying the expression (1), the lid substrate wafer 50 can be heated in the preheating step S60 so as to be higher than the bonding temperature F ₁ of the lid substrate wafer 50 in the anodic bonding step S70. it can.
The set temperature T ₂ of the second heater 72 is a difference α ₂ between the bonding temperature F ₂ of the base substrate wafer 40 and the arbitrary temperature t ₂ of the second heater 72 and the actual temperature f ₂ of the base substrate wafer 40. It is set to a temperature higher than the temperature added. Here, as described above, the difference α ₂ is substantially constant regardless of the set temperature of the second heater 72. Therefore, by satisfying the expression (2), the base substrate wafer 40 can be heated in the preheating step S60 so as to be higher than the bonding temperature F ₂ of the base substrate wafer 40 in the anodic bonding step S70. it can.
Therefore, it is possible to reliably suppress the outgas being released into the package in an anodic bonding step S70 described later.

By the way, when the temperatures of the first heater 71 and the second heater 72 are set so as to satisfy the above-described expressions (1) and (2), no outgas is released in the anodic bonding step S70. However, all the outgas may not be released. For this reason, for example, after the piezoelectric vibrator 1 is mounted on an electronic device or the like, the temperature rises when the electronic device or the like is used, and the piezoelectric vibrator 1 becomes considerably higher than the bonding temperatures F ₁ and F _2. If this happens, outgas may be released.

Therefore, in the preheating step S60, since the outgas is completely discharged, the lid substrate wafer 50 and the base substrate wafer 40 are used for the lid substrate so as to have a temperature higher than the discharge temperatures K ₁ and K ₂ for releasing the outgas. It is desirable to heat the wafer 50 and the base substrate wafer 40.

In the preheating step S60, the set temperatures T ₁ and T ₂ of the first heater 71 and the second heater 72 are set so as to satisfy the above-described equations (1) and (2).
Further, the discharge temperature of the base substrate wafer 40 when the discharge temperature of the lid substrate wafer 50 and K _1, the outgas from the base substrate wafer 40 is released when the outgas is released from the lid substrate wafer 50 when the K _2, the set temperature T ₂ of the set temperature T _1, and the second heater 72 of the first heater 71 of the preheating step step S60,
T ₁ > K ₁ + α ₁ (3) and T ₂ > K ₂ + α ₂ (4)
It is set to satisfy. As an example, the discharge temperature K ₁ is, for example, about K ₁ = 330 ° C. Moreover, since the difference α ₁ is about 90 ° C. as described above, the set temperature T ₁ of the first heater 71 is set to 420 ° C. or more, for example.

The set temperature T ₁ of the first heater 71 in each wafer heating step S 63 is the discharge temperature K ₁ at which the outgas is released from the lid substrate wafer 50, the arbitrary temperature t ₁ of the first heater 71, and the lid substrate wafer 50. The temperature is set higher than the temperature obtained by adding the difference α ₁ to the actual temperature f ₁ . Therefore, by satisfying the expression (3), the lid substrate wafer 50 can be heated so as to be higher than the discharge temperature K ₁ at which the outgas is released.
The set temperature T ₂ of the second heater 72 in each wafer heating step S63 is the discharge temperature K ₂ at which outgas is released from the base substrate wafer 40, the arbitrary temperature t ₂ of the second heater 72, and the base substrate wafer. The temperature is set to be higher than the temperature obtained by adding the difference α ₂ with the actual temperature f _{2 of} 40.
Therefore, by satisfying the equation (4), the base substrate wafer 40 can be heated so as to be higher than the discharge temperature K ₂ at which the outgas is released.

When the set temperature T ₁ is set so as to satisfy the expressions (1) and (3) and the lid substrate wafer 50 is heated by the first heater 71, outgas is released from the lid substrate wafer 50. Similarly, when the set temperature T ₂ is set so as to satisfy the expressions (2) and (4) and the base substrate wafer 40 is heated by the second heater 72, outgas is released from the base substrate wafer 40. The outgas is discharged from the gap G between the base substrate wafer 40 and the lid substrate wafer 50 into the preheating chamber 67 a of the vacuum chamber 65. After elapse of a predetermined time (for example, a time when it is assumed that outgas is completely released), each wafer heating step S63 is ended. Above, preheating process S60 is complete | finished.

(Anode bonding step S70)
FIG. 9 is an explanatory diagram of the anodic bonding step S70.
Next, an anodic bonding step S70 for anodic bonding of the lid substrate wafer 50 and the base substrate wafer 40 is performed. Specifically, anodic bonding is performed according to the following procedure.
First, the lid substrate wafer 50 and the base substrate wafer 40 are moved from the preheating chamber 67a to the anodic bonding chamber 67b together with the first heater 71, the second heater 72, and the spacer 75 in a vacuum state. In the anodic bonding chamber 67b, the lid substrate wafer 50 and the base substrate wafer 40 are set in the same state as in the setting step S61 described above.

Next, as shown in FIG. 9, the spacer 75 is moved to the outer diameter side of the lid substrate wafer 50 and the base substrate wafer 40 to remove the spacer 75, and the bonding film 35 of the lid substrate wafer 50 and the base substrate are removed. The upper surface U of the wafer 40 is brought into contact.
Subsequently, the upper surface 71 a of the first heater 71 is pressed by a pressure device (not shown), and the lid substrate wafer 50 is pressed against the base substrate wafer 40. Note that the pressing force of the pressurizing device is, for example, about 500N.

Subsequently, the lid substrate wafer 50 is heated by the first heater 71 and the base substrate wafer 40 is heated by the second heater 72 while being pressed by a pressurizing device. For example, the first heater 71 is set to about 200 ° C., and the lid substrate wafer 50 is heated until the lid substrate wafer 50 reaches the bonding temperature F ₁ = 190 ° C. For example, the second heater 72 is set to about 220 ° C., and the base substrate wafer 40 is heated until the bonding temperature F ₂ = 210 ° C. It is desirable to set the temperature of the second heater 72 slightly higher than the temperature of the first heater 71. Accordingly, it is possible to prevent warpage from occurring after the base substrate wafer 40 and the lid substrate wafer 50 are bonded in the anodic bonding step S70.

Here, in the preheating step S60 in the foregoing, we have set (1) and (2) so as to satisfy the equation set temperature T ₂ of the set temperature T ₁ and the second heater 72 of the first heater 71. That is, in the preheating step S60, the lid substrate wafer 50 and the base substrate wafer 40 are heated so as to be higher than the bonding temperatures F ₁ and F ₂ . Therefore, outgas is not released from the lid substrate wafer 50 and the base substrate wafer 40 in the anodic bonding step S70.

  Subsequently, while pressing with the pressurizing device and heating with the first heater 71 and the second heater 72, the bonding film 35 of the lid substrate wafer 50 is used as the anode electrode of the power source 77, and the base substrate wafer 40 is used as the power source 77. Connected to the cathode electrode, a voltage of about 500 V, for example, is applied between the electrodes. Thereby, the lid substrate wafer 50 and the base substrate wafer 40 can be anodically bonded, and the wafer body 60 shown in FIG. 6 can be obtained. This completes the anodic bonding step S70.

  Next, a conductive material is patterned on the lower surface L of the base substrate wafer 40 to form a plurality of pairs of external electrodes 38 and 39 (see FIG. 3) electrically connected to the pair of through electrodes 32 and 33, respectively. An external electrode forming step S80 is performed. Through this process, the piezoelectric vibrating reed 4 is electrically connected to the external electrodes 38 and 39 via the through electrodes 32 and 33.

  Next, in the state of the wafer body 60, a fine adjustment step S90 is performed in which the frequency of each piezoelectric vibrator sealed in the cavity 3a is finely adjusted to fall within a predetermined range. Specifically, a predetermined voltage is continuously applied from the external electrodes 38 and 39 shown in FIG. 3 to measure the frequency while vibrating the piezoelectric vibrating reed 4. In this state, laser light is irradiated from the outside of the base substrate wafer 40 to evaporate the fine adjustment film 21b (see FIG. 2) of the weight metal film 21. Thereby, since the weight of the tip side of the pair of vibrating arm portions 10 and 11 is reduced, the frequency of the piezoelectric vibrating piece 4 is increased. As a result, the frequency of the piezoelectric vibrator can be finely adjusted to fall within the range of the nominal frequency.

  After the fine adjustment of the frequency, a cutting step S100 is performed for cutting the bonded wafer body 60 along the cutting line M shown in FIG. Specifically, a UV tape is first attached to the surface of the base substrate wafer 40 of the wafer body 60. Next, laser irradiation is performed along the cutting line M from the lid substrate wafer 50 side (scribing). Next, the cutting blade is pressed along the cutting line M from the surface of the UV tape to cleave the wafer body 60 (braking). Thereafter, the UV tape is peeled off by UV irradiation. Thereby, the wafer body 60 can be separated into a plurality of piezoelectric vibrators. The wafer body 60 may be cut by other methods such as dicing.

  In addition, after performing cutting process S100 and making it to each piezoelectric vibrator, the process order which performs fine adjustment process S90 may be sufficient. However, as described above, by performing the fine adjustment step S90 first, fine adjustment can be performed in the state of the wafer body 60, and therefore, a plurality of piezoelectric vibrators can be finely adjusted more efficiently. Therefore, it is preferable because throughput can be improved.

  Thereafter, an internal electrical characteristic inspection S110 is performed. That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 4 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an external appearance inspection of the piezoelectric vibrator is performed to finally check dimensions and quality. This completes the manufacture of the piezoelectric vibrator.

  According to the present embodiment, by performing the preheating step S60, outgas can be released before the anodic bonding step S70. At this time, a spacer 75 is disposed between the bonding film 35 of the lid substrate wafer 50 and the base substrate wafer 40 to perform a preheating process. For this reason, the outgas released from the lid substrate wafer 50 and the base substrate wafer 40 is released to the outside from the gap G between the base substrate wafer 40 and the lid substrate wafer 50 formed by the spacer 75. Thereby, since it is possible to suppress the outgas from being released into the piezoelectric vibrator 1 in the anodic bonding step S70, a satisfactory degree of vacuum of the piezoelectric vibrator 1 can be ensured.

Further, according to the present embodiment, the set temperature T ₁ of the first heater 71 in the preheating step S60 is equal to the bonding temperature F ₁ of the lid substrate wafer 50, the arbitrary temperature t ₁ of the first heater 71 and the lid substrate. The temperature is higher than the temperature obtained by adding the difference α ₁ with the actual temperature f ₁ of the wafer 50. Further, the set temperature T ₂ of the second heater 72 in the preheating step S60 is equal to the bonding temperature F ₂ of the base substrate wafer 40, the arbitrary temperature t ₂ of the second heater 72, and the actual temperature f ₂ of the base substrate wafer 40. The temperature is higher than the temperature obtained by adding the difference α ₂ to As a result, the actual temperatures of the lid substrate wafer 50 and the base substrate wafer 40 in the preheating step S60 are higher than the bonding temperatures F ₁ and F _{2 in} the anodic bonding step S70. Therefore, it is possible to reliably prevent the outgas from being released into the package in the anodic bonding step S70, and to secure a better degree of vacuum in the package.

Further, in the preheating step S60, so as to heat the lid substrate wafer 50 to be a temperature higher than the release temperature K ₁ outgas is released, a temperature higher than the release temperature K ₂ outgas is released, The base substrate wafer 40 is heated. As a result, outgas can be completely discharged from the lid substrate wafer 50 and the base substrate wafer 40. Therefore, during the anodic bonding step S70 and also when the completed piezoelectric vibrator 1 is used, outgas is surely prevented from being released into the piezoelectric vibrator 1, and a better vacuum of the piezoelectric vibrator 1 is obtained. The degree can be secured.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 10, the oscillator 110 according to the present embodiment is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 111. The oscillator 110 includes a substrate 113 on which an electronic element component 112 such as a capacitor is mounted. An integrated circuit 111 for an oscillator is mounted on the substrate 113, and a piezoelectric vibrating piece of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 111. The electronic element component 112, the integrated circuit 111, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 110 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece and input to the integrated circuit 111 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 111 and output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
In addition, by selectively setting the configuration of the integrated circuit 111, for example, an RTC (real-time clock) module or the like as required, the operation date and time of the device or external device in addition to a single-function oscillator for a clock, etc. A function for controlling the time, providing a time, a calendar, and the like can be added.

  According to the oscillator 110 of the present embodiment, it is possible to provide a high-performance oscillator 110 because the piezoelectric vibrator 1 having a good degree of vacuum and excellent electrical characteristics is provided.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that a portable information device 120 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
First, the portable information device 120 of this embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the prior art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

  Next, the configuration of the portable information device 120 of this embodiment will be described. As shown in FIG. 11, the portable information device 120 includes the piezoelectric vibrator 1 and a power supply unit 121 for supplying power. The power supply unit 121 is made of, for example, a lithium secondary battery. The power supply unit 121 includes a control unit 122 that performs various controls, a clock unit 123 that counts time, a communication unit 124 that communicates with the outside, a display unit 125 that displays various information, and the like. A voltage detection unit 126 that detects the voltage of the functional unit is connected in parallel. Power is supplied to each functional unit by the power supply unit 121.

  The control unit 122 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 122 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area for the CPU.

  The timer unit 123 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece vibrates, and the vibration is converted into an electric signal by the piezoelectric characteristics of the crystal, and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 122 through the interface circuit, and the current time, current date, calendar information, and the like are displayed on the display unit 125.

The communication unit 124 has functions similar to those of a conventional mobile phone, and includes a radio unit 127, a voice processing unit 128, a switching unit 129, an amplification unit 130, a voice input / output unit 131, a telephone number input unit 132, a ring tone generation unit. 133 and a call control memory unit 134.
The radio unit 127 exchanges various data such as audio data with the base station via the antenna 135. The audio processing unit 128 encodes and decodes the audio signal input from the radio unit 127 or the amplification unit 130. The amplifying unit 130 amplifies the signal input from the audio processing unit 128 or the audio input / output unit 131 to a predetermined level. The voice input / output unit 131 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 133 generates a ring tone in response to a call from the base station. The switching unit 129 switches the amplifying unit 130 connected to the voice processing unit 128 to the ringing tone generating unit 133 only when an incoming call is received, so that the ringing tone generated by the ringing tone generating unit 133 passes through the amplifying unit 130. To the audio input / output unit 131.
Note that the call control memory unit 134 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 132 includes, for example, number keys from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  The voltage detection unit 126 detects the voltage drop and notifies the control unit 122 when the voltage applied to each functional unit such as the control unit 122 by the power supply unit 121 falls below a predetermined value. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary to stably operate the communication unit 124, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 126, the control unit 122 prohibits the operations of the radio unit 127, the voice processing unit 128, the switching unit 129, and the ring tone generation unit 133. In particular, it is essential to stop the operation of the wireless unit 127 with high power consumption. Further, the display unit 125 displays that the communication unit 124 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 124 can be prohibited by the voltage detection unit 126 and the control unit 122, and that effect can be displayed on the display unit 125. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 125.
In addition, the function of the communication part 124 can be stopped more reliably by providing the power supply cutoff part 136 that can selectively cut off the power of the part related to the function of the communication part 124.

  According to the portable information device 120 of the present embodiment, the high-performance portable information device 120 can be provided because the piezoelectric vibrator 1 having a good degree of vacuum and excellent electrical characteristics is provided.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 12, the radio-controlled timepiece 140 according to the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 141, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have both the property of propagating the ground surface and the property of propagating while reflecting the ionosphere and the ground surface, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.

Hereinafter, the functional configuration of the radio timepiece 140 will be described in detail.
The antenna 142 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 143 and filtered and tuned by the filter unit 141 having the plurality of piezoelectric vibrators 1.
The piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 148 and 149 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 144.
Subsequently, the time code is taken out via the waveform shaping circuit 145 and counted by the CPU 146. The CPU 146 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 148, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator portions 148 and 149 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Therefore, when the radio timepiece 140 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  According to the radio-controlled timepiece 140 of the present embodiment, the high-performance radio-controlled timepiece 140 can be provided because the piezoelectric vibrator 1 having a good degree of vacuum and excellent electrical characteristics is provided.

The present invention is not limited to the embodiment described above.
In the present embodiment, the piezoelectric vibrator 1 is manufactured by enclosing the tuning fork type piezoelectric vibrating reed 4 inside the package 9 while using the manufacturing method of the package 9 according to the present invention. However, for example, an AT-cut type piezoelectric vibrating piece (thickness sliding vibrating piece) may be enclosed in the package 9 to manufacture a piezoelectric vibrator. Further, a device other than the piezoelectric vibrator may be manufactured by enclosing an electronic component other than the piezoelectric vibrating piece in the package 9.

  In the preheating step S <b> 60 of the present embodiment, the gap G is formed between the lid substrate wafer 50 and the base substrate wafer 40 using two spacers 75. However, for example, the gap G may be formed by using three or more spacers 75. However, this embodiment is advantageous in that the spacer 75 can be installed in a short time.

DESCRIPTION OF SYMBOLS 1 ... Piezoelectric vibrator 2 ... Lid board | substrate (1st board | substrate) 3 ... Base board | substrate (2nd board | substrate) 4 ... Piezoelectric vibration piece 9 ... Package 71 ... 1st heater 72. .. Second heater 75 ... Spacer 110 ... Oscillator 120 ... Portable information device (electronic device) 123 ... Timekeeping unit 140 ... Radio clock 141 ... Filter unit S60 ... Preheating Process S70 ... Anodic bonding process

Claims (7)

A package manufacturing method for manufacturing a package by anodic bonding a bonding material formed on an inner surface of a first substrate and an inner surface of a second substrate,
A first heater having a set temperature T ₁ is brought into contact with the outer surface of the first substrate, a second heater having a set temperature T ₂ is brought into contact with the outer surface of the second substrate, and each substrate is heated by the heater. A preheating step;
A voltage is applied using the bonding material of the first substrate as an anode, the second substrate as a cathode, the first substrate as a bonding temperature F _1, and the second substrate as a bonding temperature F _2. And an anodic bonding step for bonding the second substrate;
Have
The preheating step is performed in a state in which a spacer is disposed between the bonding material of the first substrate and the second substrate, and the first substrate and the second substrate are overlapped via the spacer. A manufacturing method of a package characterized by the above. A method of manufacturing a package according to claim 1,
Under the same conditions as the pre-heating step, the first heater and any temperature t _1, in the case of heating the respective substrates of the second heater as an optional temperature t _2, the arbitrary temperature t ₁ of the first heater the difference alpha ₁ between the actual temperature f ₁ of the first substrate, and said arbitrary temperature t ₂ of the second heater measured in advance difference alpha ₂ between the actual temperature f ₂ of the second substrate,
Setting the temperature T ₁ of the first heater of the preheating step, and the set temperature T ₂ of the second heater,
T ₁ > F ₁ + α ₁ and T ₂ > F ₂ + α ₂ ,
A package manufacturing method characterized by being set to satisfy A method of manufacturing a package according to claim 2,
When the discharge temperature of the first substrate when outgassing is released from the first substrate and K _1, the release temperature of the second substrate when outgassing is released from the second substrate was K _2,
Setting the temperature T ₁ of the first heater of the preheating step, and the set temperature T ₂ of the second heater,
T ₁ > K ₁ + α ₁ and T ₂ > K ₂ + α ₂ ,
A package manufacturing method characterized by being set to satisfy   A piezoelectric vibrator, wherein a piezoelectric vibrating piece is enclosed in the package manufactured by the package manufacturing method according to claim 1.   An oscillator, wherein the piezoelectric vibrator according to claim 4 is electrically connected to an integrated circuit as an oscillator.   5. An electronic apparatus, wherein the piezoelectric vibrator according to claim 4 is electrically connected to a time measuring unit.   A radio-controlled timepiece wherein the piezoelectric vibrator according to claim 4 is electrically connected to a filter portion.

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