JP2012069816A - Wiring board using aluminum composite material - Google Patents
Wiring board using aluminum composite material Download PDFInfo
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- JP2012069816A JP2012069816A JP2010214401A JP2010214401A JP2012069816A JP 2012069816 A JP2012069816 A JP 2012069816A JP 2010214401 A JP2010214401 A JP 2010214401A JP 2010214401 A JP2010214401 A JP 2010214401A JP 2012069816 A JP2012069816 A JP 2012069816A
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- composite material
- copper foil
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この発明は、配線基板のベース材料に関するものである。 The present invention relates to a base material for a wiring board.
プリント配線基板の種類のうち、アルミニウム等のベース金属に絶縁層を介して銅箔を貼り付けた、メタルベース配線基板が熱移動の遅いこと、および熱膨張率の大きいことにより様々な制約がある。 Among the types of printed wiring boards, there are various restrictions due to the fact that the metal base wiring board has a slow heat transfer and a high coefficient of thermal expansion. .
メタルベース配線板は、主としてアルミニウムをベース材料として、絶縁層を介して、配線としての銅箔を貼り付ける構造からなっている。(図−1)
アルミニウムは、その熱伝導度は200W/m・K程度であり、金属の中では熱移動の速い方ではなく、銅は、その熱伝導度は390W/m・Kと、熱移動は速いけれども、比重が大きく、LEDなどを照明として応用した場合、特に大きな面積を必要とする街灯などの照明器具として使用する場合、重量が重くなるという弊害がある。
The metal base wiring board has a structure in which aluminum is mainly used as a base material and a copper foil as wiring is pasted through an insulating layer. (Figure 1)
Aluminum has a thermal conductivity of about 200 W / m · K, which is not the fastest heat transfer among metals. Copper has a thermal conductivity of 390 W / m · K, which is fast, When the specific gravity is large and an LED or the like is applied as lighting, particularly when used as a lighting device such as a streetlight that requires a large area, there is a problem that the weight increases.
さらに、アルミニウムや銅は熱膨張率が大きく、LEDやパワー半導体の熱膨張率とは大きな差異が生じてしまう。このため、配線基板上の温度変化により、剥離、曲がり、反り等が起こり、良好に熱を移動させるには難点がある。 Furthermore, aluminum and copper have a large coefficient of thermal expansion, which causes a large difference from the coefficient of thermal expansion of LEDs and power semiconductors. For this reason, peeling, bending, warping, and the like occur due to temperature changes on the wiring board, and there is a difficulty in transferring heat well.
又、図−1のような構造では、絶縁層の熱伝導度が、1〜8W/m・Kと低く、厚さが40〜80μmであることを考慮しても、絶縁層の伝熱抵抗が支配的となってしまう。 Further, in the structure as shown in FIG. 1, the heat transfer resistance of the insulating layer is considered even if the insulating layer has a low thermal conductivity of 1 to 8 W / m · K and a thickness of 40 to 80 μm. Becomes dominant.
前記課題に鑑み、本発明では、ベース基板をアルミニウムや銅と替えて、カーボン・アルミニウム複合材を採用することとした。 In view of the above problems, in the present invention, a carbon / aluminum composite material is adopted by replacing the base substrate with aluminum or copper.
カーボン・アルミニウム複合材は、黒鉛化した粒状の集合物の空隙にアルミニウムを圧入させて、黒鉛の体積比率が70〜95%で、残りの99%以上がアルミニウム又はアルミニウム合金よりなる複合材である。この複合材は、熱拡散率が2.0〜5.0cm2/secと金属の0.8〜1.1cm2/sceと比して格段に大きく、熱移動の速いことが知られている。 The carbon / aluminum composite material is a composite material in which aluminum is pressed into the voids of the graphitized granular aggregate, the graphite volume ratio is 70 to 95%, and the remaining 99% or more is made of aluminum or an aluminum alloy. . It is known that this composite material has a thermal diffusivity of 2.0 to 5.0 cm 2 / sec, which is much larger than that of metal, 0.8 to 1.1 cm 2 / sce, and quick heat transfer. .
又、この複合材の熱膨張率は6〜7ppm/℃であり、LEDの6.8ppm/℃や、その他の各種半導体の3〜8ppm/℃と適合している。これに対してアルミニウムの24ppm/℃や、銅の17ppm/℃では熱膨張率が大きく、低出力のものしか使用できないことは自明である。 Further, the thermal expansion coefficient of this composite material is 6 to 7 ppm / ° C., which is compatible with 6.8 ppm / ° C. of LED and 3 to 8 ppm / ° C. of other various semiconductors. On the other hand, it is obvious that at 24 ppm / ° C. for aluminum and 17 ppm / ° C. for copper, the coefficient of thermal expansion is large, and only low output can be used.
そこで、本発明は上記複合材をメタル配線基板のベース材料として、より熱移動の速い、かつ、適合性に優れた熱膨張率を有する配線基板を開発した。(図−2) Accordingly, the present invention has developed a wiring board having a thermal expansion coefficient that is faster in heat transfer and excellent in compatibility, using the composite material as a base material for a metal wiring board. (Figure 2)
複合材を利用することにより、伝熱抵抗の大きい絶縁層も、支配的な伝熱抵抗とはならなくなった。 By using the composite material, the insulating layer having a large heat transfer resistance does not become the dominant heat transfer resistance.
さらに、より速い伝熱構造を形成するために、回路を形成すると同時に、熱を集めるためにも銅箔を利用し、熱を集めた銅箔から、直接複合材に熱を伝える構造を、ハンダを流し込み、銅箔を一体化する方法(図−3)も完成させた。この時、熱膨張率が適合しているので、温度変化によるハンダ割れという問題も無くなった。 Furthermore, in order to form a faster heat transfer structure, a copper foil is also used to collect heat at the same time as the circuit is formed, and a structure that transfers heat directly from the collected copper foil to the composite material And the method of integrating the copper foil (FIG. 3) was also completed. At this time, since the coefficient of thermal expansion was suitable, the problem of solder cracking due to temperature change was eliminated.
又、さらに、より速い伝熱構造を形成するために、前記ハンダの替わりにネジを用いて、銅箔と複合材、更には、その先のヒートシンクと一体化する方法(図−4)も完成させた。この場合、ネジ用の穴は、複合材まででも良く、又、貫通させてヒートシンクに届くようにしても良い。 In addition, in order to form a faster heat transfer structure, a method of integrating a copper foil and a composite material and further a heat sink ahead (FIG. 4) using screws instead of the solder is completed. I let you. In this case, the screw hole may be up to the composite material, or may be penetrated to reach the heat sink.
本発明によれば、炭素アルミニウム複合材をベースとするLEDや、半導体の放熱性に優れた配線基板を完成できる。これにより、高出力半導体や、高輝度LEDの長寿命化が可能となる。 ADVANTAGE OF THE INVENTION According to this invention, the wiring board excellent in LED and the heat dissipation of a semiconductor based on a carbon aluminum composite material can be completed. This makes it possible to extend the life of high-power semiconductors and high-brightness LEDs.
各図面のベース材料の下にはアルミニウム製ヒートシンクが配置されるが、省略してある。
1.4.7.13. 銅箔(18〜105μm)
2.5.8.14. 絶縁層(40〜200μm)
3. ベース金属(アルミニウム・銅)
6.9.15. ベース材料複合材
10. ハンダ
11. 銅メッキ
12. 貫通穴
16. ネジ
1.4.7.13. Copper foil (18-105μm)
2.5.8.14. Insulating layer (40-200μm)
3. Base metal (aluminum / copper)
6.9.15. Base material composite 10. Solder 11. Copper plating12. Through hole 16. screw
本発明をより具体的に説明するための実施例を示す。 Examples for explaining the present invention more specifically are shown below.
黒鉛化された粉体を、鉄製の容器に体積率が85%になるように詰め込み、これを700℃に予熱した後、溶湯鍛造法により、JISAC4Bのアルミニウム合金溶湯を、90MPaの圧力にて含浸し、冷却後、比重2.30の複合材を得た。これから、厚さ1.5mmで、20mm平方の板を得た。その後、40μmの5重量%窒化アルミニウム(平均粒径7μm)を配合したポリイミドを接合し、その上に、70μmの銅箔を貼り付けて、10WのLEDチップの配線基板を完成させた。LEDチップを配して、330mAで30Vの電圧をかけて100日間点灯したが、光束は1500lmのまま、変化が無かった。又、LED上部の温度は60℃であった。 The graphitized powder is packed in an iron container so that the volume ratio is 85%, preheated to 700 ° C., and then impregnated with a molten JISAC4B aluminum alloy at a pressure of 90 MPa by a molten metal forging method. After cooling, a composite material having a specific gravity of 2.30 was obtained. From this, a 20 mm square plate having a thickness of 1.5 mm was obtained. Thereafter, a polyimide compounded with 40 μm of 5 wt% aluminum nitride (average particle size: 7 μm) was bonded, and a 70 μm copper foil was adhered thereon to complete a 10 W LED chip wiring board. An LED chip was placed and lighted for 100 days at a voltage of 330 mA and a voltage of 30 V, but the luminous flux remained unchanged at 1500 lm. Moreover, the temperature of LED upper part was 60 degreeC.
実施例1と同様の複合材より、厚さ3.2mmで、80mm×40mmの板材をとり出し、80μmの高熱伝導性フィラー入りのポリイミドを接合し、その上に140μmの銅箔を貼り付けて、出力167Wのパワー半導体基板の回路を形成した後に図−4の方法を用いて、アルミニウム製ヒートシンクの上に配置した。この時、ネジは、ヒートシンクにまで到達させた。
これを複合材の替わりに同じ大きさの銅板を用いた時と比較した温度を表1に示す。
表1
From a composite material similar to that of Example 1, a plate material having a thickness of 3.2 mm and an 80 mm × 40 mm was taken out, 80 μm of polyimide containing a high thermal conductive filler was bonded, and a 140 μm copper foil was pasted thereon. After the circuit of the power semiconductor substrate having an output of 167 W was formed, it was placed on an aluminum heat sink using the method of FIG. At this time, the screw reached the heat sink.
Table 1 shows the temperature at which this was compared with the case of using a copper plate of the same size instead of the composite material.
Table 1
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106455308A (en) * | 2016-08-23 | 2017-02-22 | 青岛墨金烯碳新材料科技有限公司 | Graphene and carbon fiber composite high-thermal-conductivity circuit board and preparation method thereof |
Citations (7)
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JPS56157085A (en) * | 1980-05-09 | 1981-12-04 | Tokyo Shibaura Electric Co | Hybrid integrated circuit |
JPS63182571U (en) * | 1987-05-19 | 1988-11-24 | ||
JPH03195083A (en) * | 1989-12-25 | 1991-08-26 | Sanyo Electric Co Ltd | Hybrid integrated circuit and its manufacture |
JPH0430491A (en) * | 1990-05-25 | 1992-02-03 | Mitsubishi Electric Corp | Composite substrate |
WO2010084824A1 (en) * | 2009-01-22 | 2010-07-29 | 電気化学工業株式会社 | Aluminum/graphite composite, and heat radiation part and led luminescent member both formed using same |
WO2010092923A1 (en) * | 2009-02-12 | 2010-08-19 | 電気化学工業株式会社 | Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and led luminescent member |
WO2010140541A1 (en) * | 2009-06-02 | 2010-12-09 | 電気化学工業株式会社 | Aluminum-graphite composite, and heat dissipating component and led luminescent member that use same |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS56157085A (en) * | 1980-05-09 | 1981-12-04 | Tokyo Shibaura Electric Co | Hybrid integrated circuit |
JPS63182571U (en) * | 1987-05-19 | 1988-11-24 | ||
JPH03195083A (en) * | 1989-12-25 | 1991-08-26 | Sanyo Electric Co Ltd | Hybrid integrated circuit and its manufacture |
JPH0430491A (en) * | 1990-05-25 | 1992-02-03 | Mitsubishi Electric Corp | Composite substrate |
WO2010084824A1 (en) * | 2009-01-22 | 2010-07-29 | 電気化学工業株式会社 | Aluminum/graphite composite, and heat radiation part and led luminescent member both formed using same |
WO2010092923A1 (en) * | 2009-02-12 | 2010-08-19 | 電気化学工業株式会社 | Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and led luminescent member |
WO2010140541A1 (en) * | 2009-06-02 | 2010-12-09 | 電気化学工業株式会社 | Aluminum-graphite composite, and heat dissipating component and led luminescent member that use same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106455308A (en) * | 2016-08-23 | 2017-02-22 | 青岛墨金烯碳新材料科技有限公司 | Graphene and carbon fiber composite high-thermal-conductivity circuit board and preparation method thereof |
CN106455308B (en) * | 2016-08-23 | 2018-10-02 | 青岛墨金烯碳新材料科技有限公司 | A kind of graphene carbon fiber composite high heat conduction wiring board and preparation method thereof |
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