JP2012063225A - Dynamic quantity sensor and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dynamic quantity sensor capable of detecting the size, direction and acceleration of external force, having a simple structure and allowed to be easily manufactured, and to provide a method for manufacturing the dynamic quantity sensor.SOLUTION: The dynamic quantity sensor includes: a substrate; a fixed part arranged on the substrate; a plurality of movable electrodes each of which has an one-end portion supported by the fixed part, is arranged separately from the substrate and includes a movable part; fixed electrodes respectively arranged adjacently to the other ends of the plurality of movable electrodes in a dynamic quantity detection direction; a first terminal electrically connected to the movable electrodes; and a second terminal electrically connected to the fixed electrodes. Each of the plurality of movable electrodes includes a thin film having internal stress, the other end parts of the plurality of movable electrodes are brought into electrically contact with respective opposed fixed electrodes, the other ends of the plurality of movable electrodes are displaced in accordance with applied external force and are electrically non-contact with the fixed electrodes.

Description

  The present invention relates to a mechanical quantity sensor that detects a mechanical quantity using an element that is displaced according to an external force, and a method for manufacturing the mechanical quantity sensor.

  In recent years, various electronic devices have been reduced in size, weight, functionality, and functionality, and electronic components to be mounted have been required to have higher density. In response to such demands, an increasing number of electronic components are manufactured as semiconductor devices. For this reason, in addition to the semiconductor device manufactured as a circuit element, a sensor for detecting a mechanical quantity is also manufactured using the semiconductor device, and a reduction in size and weight is achieved. For example, in an acceleration sensor having a small and simple structure formed by using MEMS (Micro Electro Mechanical Systems) technology, a movable part (movable electrode) that is displaced according to an external force is formed on a semiconductor substrate, and this movable part A type of sensor has been put to practical use that detects this displacement using a piezoresistive element, a capacitive element or the like.

  As such a semiconductor sensor, a semiconductor acceleration sensor having a substantially rectangular pulse-shaped movable electrode and a fixed electrode facing the movable electrode is provided with a support film for generating tensile stress on the upper surface of the movable electrode, and the movable electrode is pulled upward. There are some which try to prevent the movable electrode from contacting the substrate and the fixed electrode due to the weight of the movable electrode (see, for example, Patent Document 1). In addition, a semiconductor acceleration sensor that detects acceleration by contacting the circumferential side surfaces of the movable electrode and the fixed electrode is provided with a film that generates tensile stress on the upper surface of the movable electrode, Some attempt to suppress deformation (see, for example, Patent Document 2).

Japanese Patent Laid-Open No. 7-167885 Japanese Patent Laid-Open No. 11-72505

  However, the semiconductor acceleration sensors proposed by the above-mentioned Patent Documents 1 and 2 may be unstable in the detection sensitivity of the sensor due to the influence of gravity, the external environment, and the like. Moreover, since the structure of the movable electrode becomes complicated, there is a problem that the manufacturing process becomes complicated and the manufacturing cost increases.

  In view of the above-described conventional problems, the present invention can detect the magnitude and direction of external force and acceleration, and can manufacture a mechanical quantity sensor and a mechanical quantity sensor that can be easily manufactured with a simple structure. It aims to provide a method.

  A mechanical quantity sensor according to an embodiment of the present invention includes a substrate, a fixed portion disposed on the substrate, and a movable portion disposed at a distance from the substrate with one end supported by the fixed portion. A plurality of movable electrodes, a fixed electrode disposed adjacent to the other end of each of the plurality of movable electrodes in a mechanical quantity detection direction, a first terminal electrically connected to the movable electrode, and the fixed A second terminal electrically connected to the electrode, wherein the plurality of movable electrodes each include a thin film having an internal stress, and the other end portions of the plurality of movable electrodes are opposed to the fixed electrodes, respectively. The other end portions of the plurality of movable electrodes are displaced in accordance with an applied external force and are not in electrical contact with the fixed electrode. According to the mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect the change from the contact (ON) to the non-contact (OFF) of the movable electrode and the fixed electrode with a simple structure. It is possible to detect the magnitude and direction of the applied external force, acceleration, and the like with stable detection accuracy by making the electrode less susceptible to gravity and the like.

  Further, the mechanical quantity sensor according to the embodiment of the present invention includes a plurality of movable electrodes including a fixed portion and a movable portion whose one end is supported by the fixed portion and whose other end is movable with respect to the fixed portion. A fixed electrode disposed adjacent to the other end of each of the plurality of movable electrodes, a first terminal electrically connected to the movable electrode, and a second terminal electrically connected to the fixed electrode A plurality of movable electrodes, wherein the movable electrode is bent when no external force is applied, and the other end portions of the plurality of movable electrodes are in electrical contact with the opposed fixed electrodes. When the external force is applied, the other end portions of the plurality of movable electrodes are displaced according to the applied external force and are not electrically in contact with the fixed electrode. According to the mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect the change from the contact (ON) to the non-contact (OFF) of the movable electrode and the fixed electrode with a simple structure. It is possible to detect the magnitude and direction of the applied external force, acceleration, and the like with stable detection accuracy by making the electrode less susceptible to gravity and the like.

  In the mechanical quantity sensor according to the embodiment of the invention, the thin film has conductivity, and the other end portions of the plurality of movable electrodes are in electrical contact with the fixed electrode through the thin film, respectively. Also good. According to the mechanical quantity sensor according to the embodiment of the present invention, the movable electrode can be brought into electrical contact with the fixed electrode by a simple manufacturing method, and the magnitude of the applied external force can be stably detected. It is possible to detect the direction, acceleration, and the like.

  In the mechanical quantity sensor according to the embodiment of the present invention, a damping material may be disposed around the plurality of movable electrodes. According to the mechanical quantity sensor according to the embodiment of the present invention, since the vibration of the movable electrode due to an impact from the outside can be suppressed and sticking in which a part of the movable electrode is not separated from the fixed electrode can be suppressed, The quantity detection sensitivity can be improved.

  In the mechanical quantity sensor according to the embodiment of the invention, the plurality of movable electrodes may include movable electrodes having different lengths. According to the mechanical quantity sensor according to the embodiment of the present invention, by varying the lengths of the movable electrodes, various magnitudes and directions and accelerations of external forces can be detected according to specifications.

  In the mechanical quantity sensor according to the embodiment of the present invention, the plurality of movable electrodes may include movable electrodes having different widths or thicknesses. According to the mechanical quantity sensor according to the embodiment of the present invention, by varying the width or thickness of the movable electrode, various magnitudes and directions and accelerations of external forces can be detected according to specifications.

  In the mechanical quantity sensor according to the embodiment of the present invention, the plurality of movable electrodes may include movable electrodes extending in different directions. According to the mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect various magnitudes, directions, and accelerations of external forces according to specifications.

  In the mechanical quantity sensor according to the embodiment of the present invention, the length, the width, the thickness, and the arrangement direction of the plurality of movable electrodes are respectively determined according to the magnitude of the external force to be detected. May be. According to the mechanical quantity sensor according to the embodiment of the present invention, these dimensions are changed according to the specifications, and a plurality of movable electrodes and fixed electrodes are arranged to detect the magnitude of the external force and the detection sensitivity of the application direction. Can be improved.

  In the mechanical quantity sensor according to the embodiment of the present invention, the other end portions of the plurality of movable electrodes may have a shape in line contact or point contact with the fixed electrode. According to the mechanical quantity sensor according to the embodiment of the present invention, since the contact area of the movable electrode when contacting the fixed electrode can be reduced, a part of the movable electrode is applied by an electrostatic attractive force or the like after the external force is applied. Can be prevented from sticking in contact with the fixed electrode.

  The mechanical quantity sensor according to the embodiment of the present invention may detect the magnitude and the application direction of the external force by detecting whether any of the plurality of movable electrodes is in contact with or not in contact with the fixed electrode. Good. According to the mechanical quantity sensor according to the embodiment of the present invention, a change in external force can be detected based on the presence or absence of conduction between the movable electrode and the fixed electrode. Cost can be reduced.

  The mechanical quantity sensor according to the embodiment of the present invention detects the magnitude and application direction of the external force by detecting a state in which the plurality of movable electrodes having different lengths are in contact with or not in contact with the fixed electrode. May be. According to the mechanical quantity sensor according to the embodiment of the present invention, by varying the lengths of the movable electrodes, various external force magnitudes and application directions can be set according to the specifications. It can be detected by the presence or absence.

  In the composite mechanical quantity sensor according to the embodiment of the present invention, a plurality of the mechanical quantity sensors may be arranged on the third substrate in accordance with the direction in which the external force is detected. According to the composite mechanical quantity sensor according to the embodiment of the present invention, it is possible to detect the direction and magnitude of external force such as a triaxial direction (X-axis, Y-axis, and Z-axis directions) and acceleration.

  In the method of manufacturing a mechanical quantity sensor according to the embodiment of the present invention, a thin film having internal stress is formed on a first substrate having a plurality of layers, and the first substrate on which the thin film is formed is etched. A plurality of movable electrodes including a fixed portion disposed on the first substrate and a movable portion disposed at a distance from the first substrate and supported at one end by the fixed portion are formed on the second substrate. Forming a fixed electrode adjacent to the other end of each of the plurality of movable electrodes in a mechanical quantity detection direction, the surface of the first substrate on which the plurality of movable electrodes are formed, and the fixed electrode The other surface of the plurality of movable electrodes is joined to the surface of the second substrate on which the second electrode is formed so as to be in electrical contact with the fixed electrode. According to the manufacturing method of the mechanical quantity sensor according to the embodiment of the present invention, since the structure of the mechanical quantity sensor becomes simple, the manufacturing process can be reduced and the manufacturing cost can be reduced, and the detection sensitivity is improved. A mechanical quantity sensor can be realized.

  In the manufacturing method of the mechanical quantity sensor according to the embodiment of the present invention, the first substrate and the second substrate are joined using a sealing material, and a space between the first substrate and the second substrate is obtained. A damping material may be encapsulated. According to the manufacturing method of the mechanical quantity sensor according to the embodiment of the present invention, it is possible to suppress the vibration of the movable electrode due to an impact from the outside, and to suppress the sticking in which the part of the movable electrode is not separated from the fixed electrode. Therefore, the detection sensitivity of the mechanical quantity can be improved.

  An electronic circuit board according to an embodiment of the present invention includes the mechanical quantity sensor, a wiring board on which the mechanical quantity sensor is mounted, and an IC that is disposed on the wiring board and is electrically connected to the mechanical quantity sensor. And a chip. According to the electronic circuit board according to the embodiment of the present invention, it is easy to mount a mechanical quantity sensor capable of detecting the magnitude and direction of external force and acceleration with a simple structure in various electronic devices. It becomes possible.

  An electronic circuit board according to an embodiment of the present invention includes the composite mechanical quantity sensor, a wiring board on which the composite mechanical quantity sensor is mounted, and the electronic circuit board disposed on the wiring board. Connected IC chips. According to the electronic circuit board according to the embodiment of the present invention, it is possible to mount a composite mechanical quantity sensor capable of detecting the magnitude and direction of external force and acceleration with a simple structure in various electronic devices. Easy to do.

  An electronic apparatus according to an embodiment of the present invention includes at least the electronic circuit board, a housing that houses the electronic circuit board, and an input unit and an output unit that are electrically connected to the electronic circuit board. It is characterized by providing. According to the electronic device according to the embodiment of the present invention, it is possible to provide an electronic device using the function of a mechanical quantity sensor capable of detecting the magnitude and direction of external force and acceleration with a simple structure.

  ADVANTAGE OF THE INVENTION According to this invention, the detection sensitivity can be improved and the manufacturing method of a mechanical quantity sensor and the mechanical quantity sensor which can be reduced to manufacturing cost by a simple manufacturing method can be provided.

It is sectional drawing which showed schematic structure of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention. 1 is a plan view showing a schematic structure of a mechanical quantity sensor according to a first embodiment of the present invention, (a) is a plan view showing a structure in which a first film is arranged on a first substrate; (B) is a top view which showed the structure which has arrange | positioned the sealing material on the 1st film | membrane shown to (a), (c) shows the structure which has arrange | positioned the fixed electrode on the 2nd board | substrate. FIG. It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the 1st board | substrate of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention, (a) is the 1st board | substrate before a process, 1st board | substrate. 2 is a cross-sectional view showing the film 2 and the first film, FIG. 4B is a cross-sectional view showing a step of forming a recess in the second film and the first film, and FIG. It is sectional drawing which shows the process of forming a recessed part in a board | substrate, and forming a movable electrode, (d) is sectional drawing which shows the process of forming a sealing material on a 1st film | membrane, (e) It is sectional drawing which shows the process of joining a 1st board | substrate and a 2nd board | substrate. It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the 2nd board | substrate of the mechanical quantity sensor which concerns on the 1st Embodiment of this invention, (a) shows the 2nd board | substrate before a process. (B) is a cross-sectional view showing a step of forming a fixed electrode on the second substrate, (c) is a cross-sectional view showing a step of forming a recess in the second substrate, and (d) (A) is sectional drawing which shows the process in the middle of forming a wiring and a penetration electrode in a 2nd board | substrate, (e) is sectional drawing which shows the process of forming a wiring and a penetration electrode in a 2nd board | substrate. It is a schematic diagram for demonstrating the structure of the movable electrode which concerns on the 1st Embodiment of this invention. It is a table | surface which shows the relationship with the deflection amount of a movable electrode at the time of changing the length of the movable electrode which concerns on the 1st Embodiment of this invention, the thickness of a movable part, and the thickness of a 1st film | membrane, respectively. It is a table | surface which shows the stress value obtained when the material and film-forming conditions of the 1st film | membrane of the mechanical quantity sensor which concern on the 1st Embodiment of this invention are changed. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 2nd Embodiment of this invention. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 2nd Embodiment of this invention, (a) is the top view which showed the structure which has arrange | positioned the 1st film | membrane on the 1st board | substrate, (B) is the top view which showed the structure which has arrange | positioned the sealing material on the 1st board | substrate shown to (a), (c) has arrange | positioned the fixed electrode and the fixed part electrode on the 2nd board | substrate. It is the top view which showed the structure. It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the 1st board | substrate of the mechanical quantity sensor which concerns on the 2nd Embodiment of this invention, (a) was shown to Fig.9 (a). (I) It is sectional drawing for demonstrating the process of forming the movable electrode on the 1st board | substrate seen from the line, (b) is the 1st seen from the (ii) line shown to Fig.9 (a). It is sectional drawing for demonstrating the process of forming the movable electrode on a board | substrate, (c) is the process of forming the movable electrode on the 1st board | substrate seen from the (iii) line | wire shown to Fig.9 (a). It is sectional drawing for demonstrating. It is a figure for demonstrating the manufacturing process which showed the schematic structure of the cross section by the side of the 2nd board | substrate of the mechanical quantity sensor which concerns on the 2nd Embodiment of this invention, (a) is a cross section which shows the 2nd board | substrate before a process. FIG. 4B is a cross-sectional view illustrating a process in the middle of forming the fixed portion electrode on the second substrate, and FIG. 5C illustrates a process in the middle of forming the fixed portion electrode and the fixed electrode on the second substrate. It is sectional drawing, (d) is sectional drawing which shows the process which formed the fixed part electrode and the fixed electrode in the 2nd board | substrate, (e) is sectional drawing which shows the process in the middle of forming a penetration electrode in the 2nd board | substrate. (F) is a cross-sectional view showing a process in the middle of forming a through electrode and a wiring terminal on the second substrate, and (g) shows a process of forming the through electrode and the wiring terminal on the second substrate. It is sectional drawing. It is the top view which showed schematic structure of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention, (a) is the top view which showed the structure which has arrange | positioned the 1st film | membrane on the 1st board | substrate, (B) is the top view which showed the structure which has arrange | positioned the sealing material on the 1st board | substrate shown to (a), (c) has arrange | positioned the fixed electrode and the fixed part electrode on the 2nd board | substrate. It is the top view which showed the structure. It is sectional drawing which showed schematic structure of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention, (a) after joining the 1st board | substrate and 2nd board | substrate which were shown in FIG. It is sectional drawing of the mechanical quantity sensor seen from the line, (b) is sectional drawing of the mechanical quantity sensor seen from the line (ii) after joining the 1st board | substrate and 2nd board | substrate shown in FIG. FIG. 13C is a cross-sectional view of the mechanical quantity sensor as viewed from line (iii) after the first substrate and the second substrate shown in FIG. 12 are joined. It is a table | surface for demonstrating operation | movement of the mechanical quantity sensor which concerns on the 3rd Embodiment of this invention, and is a table | surface showing the conduction | electrical_connection relationship between the direction and magnitude | size of the applied external force, and a some movable electrode and a fixed electrode. . It is the figure which showed schematic structure of the composite type | mold dynamic quantity sensor which concerns on the 4th Embodiment of this invention. It is a figure which shows the circuit structure of the processing circuit which processes the signal detected by the dynamic quantity sensor which concerns on one Embodiment of this invention. It is a perspective view which shows schematic structure of the electronic circuit board which concerns on the 5th Embodiment of this invention. It is a perspective view which shows schematic structure of the portable information terminal which concerns on the 5th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to the following embodiment, In the range which does not deviate from the summary, it can implement in various aspects.

(First embodiment)
<Structure of mechanical quantity sensor>
First, the basic structure of the mechanical quantity sensor according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a sectional view showing a schematic structure of a mechanical quantity sensor 100 according to the first embodiment of the present invention. The mechanical quantity sensor 100 includes a first substrate 104, a fixed portion 102 b formed on the first substrate 104, and a movable portion 102 a formed at one end supported by the fixed portion 102 b and spaced apart from the first substrate 104. , And the movable electrode 102 including the first film 101 formed on the movable portion 102a, the fixed electrode 103a disposed adjacent to the other end of the movable electrode 102 in the mechanical quantity detection direction, and the fixed electrode 103a And a second substrate 105 on which is formed. In the present embodiment, the first film 101 is a thin film (stress film) having internal stress. The fixed portion 102b is fixed on the first substrate 104, the movable portion 102a has flexibility or elasticity, and bends in the Z-axis direction shown in the drawing according to the external force applied to the mechanical quantity sensor 100. Mu When no external force is applied, the movable electrode 102 is in electrical contact with the fixed electrode 103a due to the internal stress of the first film 101 formed on the movable portion 102a.

  When an external force from positive to negative in the Z-axis direction shown in FIG. 1 (a direction from the top to the bottom in the figure in the Z-axis direction) shown in FIG. 1 is applied to the mechanical quantity sensor 100, a part of the movable electrode 102 becomes a fixed electrode. It is displaced from a state in contact with 103a to a non-contact state. The mechanical quantity sensor 100 can detect the magnitude and direction of the external force applied to the mechanical quantity sensor 100, acceleration, and the like by detecting the presence or absence of conduction between the fixed electrode 103 a and the movable electrode 102 at this time. .

  In the present embodiment, the first film 101 may be a stress film having conductivity or a stress film having insulation. For example, when the first film 101 has conductivity, the first film 101 may be formed on the entire upper surface of the movable portion 102a and the fixed portion 102b as illustrated. When the movable portion 102a bends in response to the application of external force, the first film 101 having conductivity changes from a state in which it is in electrical contact with the fixed electrode 103a to a non-contact state. Thereby, it is possible to detect the presence or absence of conduction between the movable electrode 102 and the fixed electrode 103a. Note that in the case where the first electrode 101 is in electrical contact with the fixed electrode 103a to make conductive contact between the movable electrode 102 and the fixed electrode 103a, the movable portion 102a may be a conductor or an insulator. There may be. In addition, the first film 101 and the movable portion 102a are not limited to the illustrated shapes as long as the movable electrode 102 and the fixed electrode 103a can have a conductive contact.

  In the case where the first film 101 is an insulator and, for example, the movable portion 102a is a conductor, although not shown, the movable portion 102a is formed on the surface of the movable portion 102a that faces the fixed electrode 103a. Alternatively, the first film 101 may be formed except for a portion in contact with the fixed electrode 103a, and the conductive movable portion 102a may be directly in electrical contact with the fixed electrode 103a. Further, at this time, a conductive terminal or the like (not shown) is separately formed on the conductive movable portion 102a, and these terminals and the like are brought into electrical contact with the fixed electrode 103a. It may be formed so as to detect the presence / absence of conduction between the electrode and the fixed electrode 103a.

  Note that when the first film 101 is an insulator and covers the entire upper surface of the movable portion 102a as shown in FIG. 1, a conductive thin film or wiring terminal is separately provided on the first film 101. Etc. (not shown) may be formed, and these may be formed in electrical contact with the fixed electrode 103a so that the conductive contact between the movable electrode 102 and the fixed electrode 103a can be obtained. Therefore, even if both the first film 101 and the movable portion 102a are insulators, a conductive thin film, a wiring terminal, etc. (not shown) are formed on the outermost surface of the movable electrode 102 facing the fixed electrode 103a. Is formed so as to be in electrical contact with the fixed electrode 103a, the conductive contact between the movable electrode 102 and the fixed electrode 103a can be made. Therefore, as long as the movable electrode 102 and the fixed electrode 103a are formed in a conductive shape, the first film 101 and the movable portion 102a may be a conductor or an insulator. In addition, the shapes of the first film 101 and the movable portion 102a are not limited to the illustrated shapes, and the first film 101 may be formed on a part of the movable portion 102a.

  Hereinafter, in the present embodiment, based on the shape illustrated in FIG. 1, a conductive first film 101 is formed on the surface of the movable portion 102 a facing the fixed electrode 103 a, and the first film 101 is formed. The description will be made assuming that the movable electrode 102 and the fixed electrode 103a are in electrical contact with each other. Thereby, the movable electrode 102 can be brought into electrical contact with the fixed electrode 103a by a simple manufacturing method. Hereinafter, description will be given assuming that the movable portion 102a is a conductor having a predetermined Young's modulus. However, as described above, the movable portion 102a and the first film 101 may be insulators.

  In addition, although the manufacturing process will be described later, the fixed portion 102b is formed from the same substrate or film as the substrate or film on which the movable portion 102a is formed (in this embodiment, the second film 110). To do. Therefore, hereinafter, when the movable portion 102a has conductivity, the fixed portion 102b also has conductivity.

  As shown in FIG. 1, in the present embodiment, the fixed electrode 103 a is formed on the second substrate 105. By fixing the first substrate 104 and the second substrate 105 through the sealing material 106, the end portion of the movable electrode 102 formed on the first substrate 104 is fixed on the second substrate 105. It is in electrical contact with the electrode 103a. In the present embodiment, it is assumed that the movable electrode 102 is in electrical contact with the fixed electrode 103a located at the upper part in the Z-axis direction due to the tensile stress of the first film 101.

  In the present embodiment, the first film 101 is disposed on the upper portion of the movable portion 102a in the Z-axis direction, but may be disposed on the lower portion of the movable portion 102a in the Z-axis direction. When the first film 101 has a compressive stress, the end of the movable electrode 102 is electrically connected to the fixed electrode 103a located at the upper part in the Z-axis direction when the first film 101 has a compressive stress. You may make it contact.

  Although not shown, the fixed electrode 103a may be formed on the first substrate 104 at a position where the end of the movable electrode 102 faces without forming the fixed electrode 103a on the second substrate 105. At this time, the first film 101 disposed on the upper part of the movable part 102a shown in FIG. 1 in the Z-axis direction has a compressive stress, so that the end part of the movable electrode 102 is made negative in the Z-axis direction. And may be in electrical contact with the fixed electrode 103a formed on the first substrate 104. In addition, by disposing the first film 101 having tensile stress in the lower portion of the movable portion 102a in the Z-axis direction, the end portion of the movable electrode 102 is deflected in the negative direction of the Z-axis direction, and the first substrate It may be in electrical contact with the fixed electrode 103 a formed on 104.

  As shown in the figure, the second substrate 105 is formed with a through electrode 103b that is electrically connected to the fixed electrode 103a. The through electrode 103b corresponds to the upper surface of the second substrate 105 where the through electrode 103b is exposed. A wiring terminal 103c that is electrically connected to the wiring is formed. As a result, the fixed electrode 103a and the wiring terminal 103c are electrically connected through the through electrode 103b. Although not shown, the wiring terminal 103c is connected to an external circuit that processes a mechanical quantity detection signal in the electronic device in which the mechanical quantity sensor 100 is mounted, and thereby the conduction between the movable electrode 102 and the fixed electrode 103a. The presence or absence of is detected.

  Further, as illustrated in FIG. 1, the fixed portion electrode 101 b may be disposed on the first film 101 disposed on the fixed portion 102 b. The fixed part electrode 101b is electrically connected to the movable electrode 102. Although not shown, the fixed portion electrode 101b may be directly formed on the conductive fixed portion 102b as long as the fixed portion 102b is electrically connected to the movable electrode 102. As illustrated in FIG. 1, when the first film 101 on the fixed part 102 b has conductivity, the fixed part electrode 101 b may be a part of the first film 101. Although not shown, metal bumps, wiring terminals, or the like may be separately formed on the fixed portion electrode 101b. The fixed part electrode 101b is electrically connected to an external circuit or the like that processes a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 100 is mounted, and thereby, the presence or absence of conduction between the movable electrode 102 and the fixed electrode 103a. Is detected.

  When the first substrate 104 and the second substrate 105 are bonded via the sealing material 106, a space 107 is formed between the first substrate 104 and the second substrate 105. In this space 107, a damping material may be enclosed in order to prevent the movable portion 102 a from being excessively displaced according to the external force applied to the mechanical quantity sensor 100. Thereby, excessive vibration of the movable portion 102a due to an external impact can be suppressed, and sticking in which a part of the movable electrode 102 is not separated from the fixed electrode 103a can be suppressed.

  Although not shown, the shape of the other end portion of the movable electrode 102 that contacts the fixed electrode 103a is, for example, a linear convex portion, a pointed wedge-shaped convex portion, a conical convex portion, or a truncated cone-shaped convex portion. You may form in the shape which carries out a line contact like this, or a point contact. As a result, the contact area of the movable electrode 102 when it comes into contact with the fixed electrode 103a can be reduced. Therefore, after applying an external force, a part of the movable electrode 102 is left in contact with the fixed electrode 103a due to electrostatic attraction or the like. Sticking that disappears can be prevented. Further, impurities such as boron or phosphorus may be doped at a high concentration on the contact surface where each of the movable electrode 102 and the fixed electrode 103a contacts, or metal film may be formed to improve contact performance. .

  According to the mechanical quantity sensor 100 according to the first embodiment of the present invention having the above-described configuration, the movable portion 102a bends in response to the application of an external force and is in a non-contact state (ON) from a state (ON) in contact with the fixed electrode 103a ( OFF) can be detected by the presence / absence of conduction between the movable electrode 102 and the fixed electrode 103a. Therefore, the detection sensitivity can be made more stable than when detecting a change from non-contact (OFF) to contact (ON). Therefore, according to the mechanical quantity sensor 100 according to the first embodiment of the present invention, with the simple structure described above, it is possible to reduce the manufacturing cost generated in the manufacturing process described later, and to improve the detection sensitivity. A sensor can be provided.

<Method of manufacturing mechanical quantity sensor>
Next, a method for manufacturing the mechanical quantity sensor 100 according to the first embodiment will be described with reference to FIGS. FIG. 2 is a plan view showing a schematic structure of the mechanical quantity sensor 100. FIG. 2A is a plan view showing a structure in which the first film 101 is disposed on the first substrate 104. FIG. FIG. 4A is a plan view showing a structure in which a sealing material 106 is arranged on the first film 101 shown in FIG. 1A, and FIG. 3C shows a structure in which a fixed electrode is arranged on the second substrate 105. FIG. FIG. 3 is a diagram for explaining a manufacturing process showing a schematic structure of a cross section of the mechanical quantity sensor 100 on the first substrate 104 side. FIG. 3A shows the first substrate 104 and the second film before processing. 110 is a cross-sectional view showing the first film 101, and FIG. 10B is a cross-sectional view showing a step of forming the recess 102k in the second film 110 and the first film 101. FIG. FIG. 6D is a cross-sectional view illustrating a process of forming the concave portion 104k in the first substrate 104 to form the fixed portion 102b and the movable portion 102a, and FIG. 4D is a step of forming the sealing material 106 on the first film 101. FIG. 4E is a cross-sectional view illustrating a process of bonding the first substrate 104 and the second substrate 105. FIG. 4 is a view for explaining a manufacturing process showing a schematic structure of a cross section of the mechanical quantity sensor 100 on the second substrate 105 side, and (a) is a cross-sectional view showing the second substrate 105 before processing. (B) is a cross-sectional view showing the step of forming the fixed electrode 103a on the second substrate 105, (c) is a cross-sectional view showing the step of forming the recess 105k on the second substrate 105, FIG. 4D is a cross-sectional view illustrating a process in the middle of forming the wiring terminal 103 c and the through electrode 103 b on the second substrate 105, and FIG. 5E illustrates the formation of the wiring terminal 103 c and the through electrode 103 b on the second substrate 105. It is sectional drawing which shows the process performed.

(1) Formation of the second film 110 and the first film 101 (see FIG. 3A)
The second film 110 is formed on the entire upper surface of the first substrate 104, and the first film 101 is formed on the entire upper surface of the second film 110. In the present embodiment, the first substrate 104 may be a silicon substrate or a glass substrate. The second film 110 is a silicon (Si) film. The size of the first substrate 104 may be a substantially square shape whose outer periphery is, for example, 2.5 mm × 2.5 mm. The thicknesses of the first film 101, the second film 110, and the first substrate 104 may be about 0.2 μm to 2.0 μm, 10 μm to 40 μm, and 400 μm, respectively. In addition, each thickness is not limited to this numerical value, It can be changed according to a specification. The second film 110 is a layer that forms the movable part 102 a and the fixed part 102 b of the mechanical quantity sensor 100. The second film 110 and the first film 101 are formed to have a predetermined thickness by forming the second film 110 on the first substrate 104 by, for example, a bonding method, and polishing the second film 110 as necessary. The first film 101 is formed on the second film 110 by a vacuum film formation method or the like. For example, a second wafer 110 may be formed by bonding a Si wafer substrate on the first substrate 104 and reducing the thickness to a predetermined thickness by CMP polishing or the like. Alternatively, the first substrate 104 and the second film 110 may be integrated in advance using an SOI substrate.

  For example, a metal material can be used for the first film 101. For example, A1, Ag, Au, Co, Cr, Cu, Fe, In, Mo, Nb, Ni, Ti, Pd, Pt, W, Zr, and other metal materials (including alloys) containing at least one of these elements. Include). The first film 101 is desirably a thin film and has a high tensile stress in the present embodiment. For example, Pt or Cr is desirably used. As a film formation method, an evaporation method, sputtering, ion plating, plasma CVD (chemical vapor deposition), LP-CVD, MO-CVD, or the like may be used. Note that a sputtering method is preferably used because low-temperature film formation is possible and there is little influence on the base material. The degree of conductivity of the first film 101 is preferably about 100 Ω · cm to 0.0001 Ω · cm.

Note that an insulating material having a high tensile stress may be used for the first film 101. For example, in the case of using a silicon nitride film, the film formation conditions include dichlorosilane (SiCl ₂ H ₂ ), silane (SiH ₄ ), disilane (Si ₂ H ₆ ), and trisilane (Si ₃ H ₈ ) as a silicon source. One is supplied at a flow rate of 5 sccm to 50 sccm, NH ₃ as an N source is supplied at a flow rate of 500 sccm to 10,000 sccm, N ₂ or Ar is supplied as a carrier gas at a flow rate of 500 sccm to 10,000 sccm, a pressure of 0.1 Torr to 400 Torr, and a substrate temperature of 4000 ° C. to 4500 ° C. A film is formed by a CVD method. At this time, the tensile stress of the first film 101 is, for example, 1.7 GPa.

  In the following description, the second film 110 will be described as an Si film. However, the second film 110 may be made of a material that can obtain a desired selection ratio with respect to the first substrate 104 in etching, which will be described later. There are no restrictions on the materials. Further, the conductivity or insulation of the second film 110 may be selected as appropriate in accordance with the properties of the first film 101.

(2) Processing of the first film 101 and the second film 110 (see FIGS. 2A and 3B)
As shown in FIG. 3B, a mask (not shown) for processing the movable electrode 102 is formed, and the first film 101 and the second film 110 are etched through the mask. A recess 102k is formed except for the position where the movable electrode 102 is formed. As an etching method, dry etching or wet etching having an etchant corresponding to the material may be used. In the case of wet etching, an EDP aqueous solution (Ethylene diamine + Pyrocatechol + water), a KOH aqueous solution (KOH + isopropyl alchol + water), or a hydrazine aqueous solution (Hydrazine + isopropyl alcohol + water) can be used. At that time, if KOH system is used as the etching solution, it has a remarkable anisotropic etching characteristic, and if it is a film of the orientation (110) plane of the Si film of the second film 110, the anisotropic etching characteristic ( 111) It is optimal because vertical grooves with side surfaces can be formed. At this time, since the etching selectivity of the first substrate 104, that is, the glass SiO ₂ film, and the second film 110, that is, the Si material is 1: 100, the first substrate 104 is hardly etched, and the second film. The etching of 110 can be terminated. Therefore, the shape of the second film 110 including the first film 101 can be maintained. When the first substrate 104 is etched, side etching of the second film 110 becomes significant. Note that the first film 101 at this time is formed in the shape illustrated in FIG.

(3) Processing of the first substrate 104 (see FIG. 2A and FIG. 3C)
By etching the first substrate 104 through a mask (not shown) for processing the movable electrode 102, the first substrate 104 in contact with the second film 110 at the position where the movable portion 102a is formed. Is removed, and the recess 104k illustrated in FIG. 3C is formed. As a result, as shown in FIG. 3C, the movable portion 102 a is formed away from the first substrate 104, and the fixed portion 102 b fixed on the first substrate 104 without being separated from the first substrate 104. Can be formed. Note that the cross-sectional shape of the movable electrode 102 at this time is convex downward because the end of the movable portion 102a is bent and lifted upward by the tensile stress of the first film 101 as shown in FIG. It becomes a substantially arc shape. Further, the shape of the upper surface of the movable portion 102a is the same as that of the first film 101 shown in FIG. Examples of the etching method include wet etching using an HF diluted aqueous solution (for example, diluting 50% HF to 10%) or an NH ₄ F aqueous solution as an etching solution.

(4) Formation of the sealing material 106 (see FIG. 2B and FIG. 3D)
A sealing material 106 is formed over the first film 101. At this time, as illustrated in FIG. 3D, the sealing material 106 is fixed to the first substrate 104 outside the edge of the recess 104 k formed when the first substrate 104 is etched. Formed on the first film 101. Further, as illustrated in FIG. 2B, the sealing material 106 is formed to have a frame shape so as to surround the first film 101 formed on the movable portion 102a. FIG. 3D is a cross-sectional view of the structure on the first substrate 104 side as seen from the line AA ′ shown in FIG. The sealing material 106 serves to maintain a gap that secures a displacement range of the movable electrode 102 by bonding the first substrate 104 and the second substrate 105 in a process described later. Therefore, as illustrated in FIG. 1, the thickness of the sealing material 106 in the Z-axis direction is greater than the thickness of the fixed electrode 103 a on the second substrate 105 to be bonded to the first substrate 104 in a later step. . Further, the sealing material 106 may be made of a bondable material such as an adhesive. As the adhesive, a general resin material may be used. For example, the adhesive may be formed using an adhesive such as a silicone resin, an epoxy resin, or a polyimide resin. In addition, a resin containing a reinforcing material such as a filler and beads may be used for the adhesive, and a spacer may be inserted to maintain the gap. The sealing material 106 is formed by a printing method, an inkjet method, a photolithography method, or the like.

  On the first film 101 formed on the fixing portion 102b, the fixing portion electrode 101b is disposed outside the sealing material 106 as shown in FIGS. 2B and 3D. Is done. The fixed part electrode 101b may be part of the first film 101 that is electrically connected to the movable electrode 102 and has conductivity. Although not shown, metal bumps, wiring terminals, and the like may be formed on the fixed portion electrode 101b. The fixed portion electrode 101b is electrically connected to an external circuit or the like that processes a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 100 is mounted. Thereby, the presence or absence of conduction between the movable electrode 102 and the fixed electrode 103a is detected.

  Through the above steps, the first substrate 104 on which the movable electrode 102 is formed is formed. Next, a method for manufacturing the second substrate 105 having the fixed electrode 103a and the wiring terminal 103c shown in FIG. 1 will be described with reference to FIG.

(5) Formation of the second substrate 105 (see FIGS. 4A and 4B)
As the second substrate 105 illustrated in FIG. 4A, a glass substrate, a semiconductor substrate, an insulating resin substrate, or the like may be used. Hereinafter, a case where a glass material is used as the second substrate 105 will be described. As shown in FIG. 4A, a conductive material 108 having conductivity is formed on the second substrate 105 by sputtering, screen printing, CVD, electrolytic plating, or the like. Next, as shown in FIG. 4B, a mask (not shown) for processing the fixed electrode 103a is formed, and the conductive material 108 is etched through the mask to form the fixed electrode 103a. To do.

(6) Formation of the through electrode 103b (see FIGS. 4C to 4E)
As shown in FIG. 4C, the second substrate 105 on which the fixed electrode 103a shown in FIG. 4B is formed is inverted to form a through electrode 103b connected to the fixed electrode 103a. A through hole 105k is formed by laser or sand blasting on the second substrate 105 on which a predetermined mask is formed at the position where the electrode 103b is formed. As shown in FIGS. 6 (d) and 6 (e), a conductive material having conductivity using sputtering, conductive paste filling (screen printing), CVD method or electrolytic plating method, etc. in the through hole 105k. 109 is formed, a mask (not shown) for processing the wiring terminal 103c is formed, and the conductive material 109 is etched through the mask to form the through electrode 103b and the wiring terminal 103c. For example, the through electrode 103b and the wiring terminal 103c may be formed by depositing a conductive layer made of polycrystalline silicon (Poly-Si) containing a conductive impurity on the inner wall of the through hole 105k by a CVD method. As the conductive layer, for example, a metal material (Ti, Cu, etc.) may be used in addition to polycrystalline silicon. Further, the wiring terminal 103c may be formed by a pattern made of Al, for example, so as to be electrically connected to the through electrode 103b in correspondence with the upper surface portion where the through electrode 103b is exposed. These wiring terminals 103c are connected to a circuit that processes a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 100 is mounted.

(7) Bonding of the first substrate 104 and the second substrate 105 (see FIGS. 2C and 3E)
A first substrate 104 (see FIG. 2B) on which the movable electrode 102 and the sealing material 106 are formed, and a second substrate 105 on which the fixed electrode 103a and the wiring terminal 103c are formed (see FIG. 2C). Are joined through a sealing material 106. At this time, as shown in FIGS. 1 and 3E, the fixed electrode 103a formed on the second substrate 105 and the end of the movable electrode 102 formed on the first substrate 104 are in electrical contact. As described above, the first substrate 104 and the second substrate 105 are aligned and bonded. Note that the wiring terminal 103 c described above may be formed on the second substrate 105 after the first substrate 104 and the second substrate 105 are joined.

(8) Encapsulation of damping material (see Fig. 3 (e))
After bonding the first substrate 104 and the second substrate 105 with the sealing material 106, a damping material may be sealed in the space 107 between the first substrate 104 and the second substrate 105. When a gas is used as the damping material, for example, inert gas Ar, Xe, Kr, etc., nitrogen, oxygen, air, or the like may be enclosed and formed in a pressurized state. In the case of using a liquid, silicon oil, propylene carbonate, pure water, alcohols, or the like may be used, and additives may be added to impart conductivity. It is to be noted that the damping material is desirable so that the contact of the contact point is not lost due to the damping material when the end of the movable electrode 102 comes into contact with the fixed electrode 103a, and the contact point is not corroded. Select a material with high viscosity and sealing conditions. A suitable material is silicon oil. Thereby, excessive vibration of the movable electrode 102 due to an impact from the outside can be suppressed, and sticking that prevents a part of the movable electrode 102 from coming off while remaining in contact with the fixed electrode 103a can be suppressed.

  Through the above steps, the mechanical quantity sensor 100 according to the first embodiment of the present invention is formed. According to the mechanical quantity sensor 100 according to the first embodiment, the magnitude and direction of the applied external force, acceleration, and the like are changed from contact (ON) to non-contact (OFF) between the movable electrode 102 and the fixed electrode 103a. It can be configured to detect changes. Thereby, compared with the case where the change from non-contact (OFF) to contact (ON) is detected, it becomes possible to improve detection sensitivity more. Furthermore, since it can manufacture with the simple manufacturing method mentioned above, manufacturing cost can be reduced.

  Hereinafter, a specific configuration of the movable electrode 102 shown in the first embodiment of the present invention will be described with reference to FIGS.

  FIG. 5 is a schematic diagram for explaining the configuration of the movable electrode 102. The movable electrode 102 shown in FIG. 5 has a fixed end A1 and a displacement end B1. The displacement end B1 is displaced in the Z-axis direction to the position indicated as the displacement end B2 by the tensile stress of the first film 101 (not shown in FIG. 5) formed on the movable portion 102a. At this time, the displacement distance from the displacement end B1 to the displacement end B2 of the movable electrode 102 is defined as a deflection amount δ. The fixed end A1 corresponds to the fixed portion 102b shown in the first embodiment, and the displacement ends B1 and B2 correspond to the end of the movable electrode 102 shown in the first embodiment.

The deflection amount δ (μm) of the movable electrode 102 is such that the length of the movable electrode 102 is 1 (μm), the thickness of the movable part 102a is b (μm), the thickness of the first film 101 is d (μm), and the movable part When the Young's modulus of 102a is E (GPa), the internal stress of the first film 101 is σ (MPa), and the Poisson's ratio of the first film 101 is υ, the following expression (1) is given.

  Here, for example, the length l of the movable electrode 102 is 1000 μm, the thickness b of the movable portion 102 a is 30 μm, the thickness d of the first film 101 is 0.2 (μm), and the Young's modulus E of the movable portion 102 a is 190 ( GPa), the internal stress σ of the first film 101 is 1500 (MPa), the Poisson's ratio of the first film 101 is 0.22, and the deflection amount δ of the movable electrode 102 is calculated based on the above formula (1). Then, the amount of deflection δ is 5.26 (μm). With the value of the deflection amount δ, there is a risk that the movable electrode 102 is loaded and damaged. Therefore, hereinafter, the results of measuring the deflection amount δ by changing the dimensions of the movable portion 102a and the first film 101 are shown in FIG. 6, and an example of realizing a practical deflection amount δ will be described based on FIG. To do.

  FIG. 6 is a table showing the relationship between the length l of the movable electrode 102, the thickness b of the movable portion 102a, and the deflection amount δ when the thickness d of the first film 101 is changed. In FIG. 6, A to E indicate measured values of the deflection amount δ when the length l of the movable electrode 102 is changed, and F to I indicate deflection amounts when the thickness b of the movable portion 102a is changed. A measured value of δ is shown, and J to O show measured values of the deflection amount δ when the thickness d of the first film 101 is changed. The deflection amount δ may be a value calculated by the above-described equation (1). In addition, the internal stress σ of the first film 101 is constant at 1500 MPa in any of A to O. The Young's modulus E of the movable part 102a and the Poisson's ratio υ of the first film 101 are the same conditions. In the comparison of the deflection amount δ shown in FIG. 6, the width t (see FIG. 5) of the movable portion 102a is not considered. In this embodiment, the width t of the movable portion 102a may be about 10 to 50 μm.

  The deflection amount δ of the movable electrode 102 is preferably 0.5 μm <δ <7 μm, and more preferably 1 μm <δ <4 μm. When the amount of deflection δ is 1 μm or less, since the stress applied to the movable portion 102a is weak, it becomes difficult for the movable electrode 102 and the fixed electrode 103a to come into contact with each other, and it is difficult to control the gap between the movable electrode 102 and the fixed electrode 103a. There is a risk of becoming. In addition, when the deflection amount δ is 4 μm or more, the stress applied to the movable portion 102a is increased, the strength surface of the movable portion 102a is weakened, and the movable portion 102a is easily damaged.

  Referring to FIG. 6, in order to generate a suitable deflection amount δ of about 2 μm, when measurement is performed by changing the length l of the movable electrode 102, the thickness b of the movable portion 102 a is 30 μm, and the first film 101 When the thickness d is 0.2 μm, the length l of the movable electrode needs to be about 600 μm. Further, in order to cause the deflection amount δ to be about 2 μm, when the thickness b of the movable part 102a is changed and measured, the length l of the movable part 102a is 400 μm and the thickness d of the first film 101 is 0.2 μm. Then, it turns out that the thickness b of the movable part 102a needs to be about 20 micrometers. In addition, when the thickness d of the first film 101 is changed and measured in order to cause the deflection amount δ to be about 2 μm, the first film 101 has a length l of 400 μm and a thickness b of 30 μm. It can be seen that the thickness d of 101 needs to be about 0.4 to 0.6 μm.

  As described above, it was confirmed that the deflection amount δ was set to a practical displacement amount by adjusting the dimensions of the movable portion 102a and the first film 101, respectively.

  Next, with reference to FIG. 7, materials and film formation conditions used for the first film 101 according to the first embodiment of the present invention will be described in detail. FIG. 7 is a table showing stress values obtained when the material and the film formation conditions of the first film 101 of the mechanical quantity sensor 100 according to the first embodiment are changed.

Note that, as described above, Pt and Cr are preferably selected as the material of the first film 101 because of high Young's modulus, density, Poisson's ratio, and the like, and high stability as a metal.
All materials are excellent in resistance to oxidation or the like that deteriorates conductivity. FIG. 7 shows stress values obtained when the first film 101 is formed using Pt or Cr while changing the film formation conditions. The first film 101 is related to the first embodiment. In the case where the mechanical quantity sensor 100 has a film internal stress that can be realized, a circle is indicated in the adaptability column. Note that the first film 101 preferably has a film internal stress of 1000 MPa or more and 2000 MPa or less. When the internal stress of the first film 101 is greater than 2000 MPa, the stress increases, and the film is peeled off when the first film 101 is formed on the second film 110 that is the film forming the movable portion 102a. Etc. may occur. Note that in the case of Pt, since it has a performance of generating a desired film stress by heating it to about several tens of MPa if it is formed at room temperature, the heat treatment 400 is performed after film formation and patterning. You may perform the process of (degreeC).

  Referring to FIG. 7, in the case of Pt, when the film forming temperature is about 400 ° C. instead of room temperature (RT) and the thickness of the first film 101 is 110 nm and 130 nm (4 and 5 in FIG. 7), It can be seen that the internal stress of the film becomes 1660 MPa and 1870 MPa, and the first film 101 according to the first embodiment can be realized. In the case of Cr, the first film having a film internal stress of 1000 MPa or more and 2000 MPa or less even when the film formation temperature is set to room temperature (RT) and the thickness of the first film 101 is changed to about 100 nm to 200 nm. It can be seen that 101 can be formed. Therefore, since the first film 101 can have a suitable internal stress by being formed using Pt or Cr, the mechanical quantity sensor 100 according to the first embodiment can be realized. Recognize.

(Second Embodiment)
<Structure of mechanical quantity sensor>
Next, the basic structure of the mechanical quantity sensor according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 8 is a cross-sectional view showing a schematic structure of a mechanical quantity sensor 200 according to the second embodiment of the present invention.

  The mechanical quantity sensor 200 according to the second embodiment is different from the mechanical quantity sensor 100 according to the first embodiment in that the concave portion 104k is not formed on the first substrate 104, and the fixed portion electrode is provided on the second substrate 204. The other configuration and operation of the mechanical quantity sensor 200 are the same as the corresponding configuration and operation of the mechanical quantity sensor 100, except that 203d is formed. Accordingly, the mechanical quantity sensor 200, like the mechanical quantity sensor 100, has a first substrate 204, a fixed portion 202b formed on the first substrate 204, and one end portion supported by the fixed portion 202b. The movable part 202a formed away from the movable part 202, the movable electrode 202 including the first film 201 formed on the movable part 202a, and the other end of the movable electrode 202 are arranged in the detection direction of the mechanical quantity. The fixed electrode 203a and the second substrate 205 on which the fixed electrode 203a is formed are included. Hereinafter, the detailed description of the configuration of the mechanical quantity sensor 200 is omitted with respect to the same configuration as the mechanical quantity sensor 100.

  As illustrated in FIG. 8, the second substrate 205 is provided with a through electrode 203 b that is electrically connected to the fixed electrode 203 a, and corresponds to the upper surface portion of the second substrate 205 where the through electrode 203 b is exposed. A wiring terminal 203c that is electrically connected to the through electrode 203b is formed. Further, the fixed electrode 203d is formed on the second substrate 205 on the same surface as the surface on which the fixed electrode 203a is formed. The fixed portion electrode 203d is electrically connected to the fixed portion 202b that is electrically connected to the movable electrode 202 on the first substrate 204. Note that the fixed portion electrode 203d may be formed so as to be electrically connected to the conductive first film 201 formed on the fixed portion 202b as illustrated. The fixed part electrode 203d is formed to be thicker in the Z-axis direction than the fixed electrode 203a. Due to this difference in thickness, as shown in FIG. 8, it is possible to secure a displacement range of the movable electrode 202 after the first substrate 204 and the second substrate 205 are joined. A through electrode 203g electrically connected to the fixed portion electrode 203d is formed on the second substrate 205, and is electrically connected to the through electrode 203g in correspondence with the upper surface portion of the second substrate 205 where the through electrode 203g is exposed. A wiring terminal 203e to be connected is formed. Although not illustrated, the wiring terminals 203c and 203e are connected to an external circuit that processes a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 200 is mounted.

  The end portion of the movable electrode 202 formed on the first substrate 204 is fixed to the second substrate 205 by bonding the first substrate 204 and the second substrate 205 via the sealing material 106. It is in electrical contact with the electrode 203a. As in the first embodiment, the movable electrode 202 is in electrical contact with the fixed electrode 103a located in the upper part in the Z-axis direction by the tensile stress of the first film 201 formed on the movable portion 202a. It shall be.

  When the first substrate 204 and the second substrate 205 are bonded via the sealing material 206, a space 207 is formed between the first substrate 204 and the second substrate 205. Similar to the mechanical quantity sensor 100, a damping material may be enclosed in the space 207 in order to prevent the movable electrode 202 from being excessively displaced by an external force applied to the mechanical quantity sensor 200.

  According to the mechanical quantity sensor 200 according to the second embodiment of the present invention having the above-described configuration, the end of the movable electrode 202 bends due to the application of an external force and is in a non-contact state from a state in which it is in contact with the fixed electrode 203a (ON). The change to (OFF) can be detected by the presence or absence of conduction between the movable electrode 202 and the fixed electrode 203a. Therefore, the detection sensitivity can be made more stable than when detecting a change from non-contact (OFF) to contact (ON). Therefore, according to the mechanical quantity sensor 200 according to the first embodiment of the present invention, with the above-described simple structure, the manufacturing cost generated in the manufacturing process described later can be reduced, and the mechanical quantity with improved detection sensitivity. A sensor can be provided.

<Method of manufacturing mechanical quantity sensor>
Next, a method for manufacturing the mechanical quantity sensor 200 according to the second embodiment will be described with reference to FIGS. FIG. 9 is a plan view showing a schematic structure of the mechanical quantity sensor 200, (a) is a plan view showing a structure in which the first film is arranged on the first substrate, and (b) It is the top view which showed the structure which has arrange | positioned the sealing material on the 1st board | substrate shown to (a), (c) is the plane which showed the structure which has arrange | positioned the fixed electrode and the fixed part electrode on the 2nd board | substrate. FIG. FIG. 10 is a diagram for explaining a manufacturing process showing a schematic structure of a cross section of the mechanical quantity sensor 200 on the first substrate side. FIG. 10A is a view taken from the line (i) shown in FIG. It is sectional drawing for demonstrating the process of forming the movable electrode on the 1st board | substrate seen, (b) is the movable electrode on the 1st board | substrate seen from the (ii) line | wire shown to Fig.9 (a). FIG. 9C is a cross-sectional view for explaining the process of forming the movable electrode, and FIG. 9C is a diagram for explaining the process of forming the movable electrode on the first substrate viewed from the line (iii) shown in FIG. It is sectional drawing. FIG. 11 is a diagram for explaining a manufacturing process showing a schematic structure of a cross section on the second substrate side of the mechanical quantity sensor according to the second embodiment of the present invention, and (a) shows a second before processing. It is sectional drawing which shows a board | substrate, (b) is sectional drawing which shows the process in the middle of forming a fixing | fixed part electrode in a 2nd board | substrate, (c) is in the middle of forming a fixing | fixed part electrode and a fixed electrode in a 2nd board | substrate. FIG. 6D is a cross-sectional view showing the process of forming the fixed portion electrode and the fixed electrode on the second substrate, and FIG. 5E is a process in the middle of forming the through electrode on the second substrate. (F) is a cross-sectional view showing a process in the middle of forming the through electrode and the wiring terminal on the second substrate, and (g) is forming the through electrode and the wiring terminal on the second substrate. It is sectional drawing which shows the process performed.

(1) Formation of semiconductor substrate W and first film 201 (see FIGS. 10A1 to 10C1)
A semiconductor substrate (SOI substrate) W in which a BOX layer (silicon oxide) 208 and a second film 210 which is a silicon film are formed on a first substrate 204 which is a silicon substrate is prepared. The outer periphery of the semiconductor substrate W has a substantially square shape of, for example, 2.5 mm × 2.5 mm, and the thicknesses of the second film 210, the BOX layer 208, and the first substrate 204 are 10 to 40 μm, 2 μm, and 400 μm, respectively. It may be. Note that the outer shape of the semiconductor substrate W, the thickness of each of the second film 210, the BOX layer 208, and the first substrate 204 are examples, and are not limited to the above. The second film 210 is a layer constituting the fixed portion 202b and the movable portion 202a of the mechanical quantity sensor 200. The BOX layer 208 is a layer that bonds the second film 210 and the first substrate 204 and functions as an etching stopper layer. The semiconductor substrate W is manufactured by a bonding method or the like. The first film 201 is formed using the same material and manufacturing method as the first film 101 according to the first embodiment, and has the same dimensions as the first film 101 according to the first embodiment. It shall have. Therefore, detailed description is omitted.

(2) Processing of second film 210 and first film 201 (see FIGS. 10A2 to 10C2)
A mask (not shown) for processing the movable portion 202a and the fixed portion 202b is formed on the first film 201 shown in FIGS. 10A1 to 10C1, and the first film 201 is formed through the mask. By etching the film 201, the second film 210, and the BOX layer 208, a portion 208 k shown in the drawing is removed so as to leave a portion where the movable portion 202 a and the fixed portion 202 b are formed. As an etching method, dry etching or wet etching having an etchant corresponding to a material can be used. Note that the etching method may be the same as that in the first embodiment, and a detailed description thereof will be omitted. Note that the first film 201 at this time is formed in the shape illustrated in FIG. 9A when viewed from above. The second film 210 is also formed in the same shape as the first film 201 illustrated in FIG.

(3) Processing of BOX layer 208 (see FIGS. 10 (a3) to (c3), (a4) to (c4))
By side-etching the BOX layer 208, the BOX layer 208 in contact with the second film 210 at the position where the movable portion 202a and the fixed portion 202b are formed is removed. As shown in FIG. 9A, the area of the second film 210 and the first film 201 corresponding to the position where the fixed part 202b is formed is in contact with the BOX layer 208, and the movable part 202a is formed. Since it is larger than the area in contact with the BOX layer 208 at the position where the movable portion 202a is formed, even if etching is performed until the BOX layer 208 in contact with the second film 210 at the position where the movable portion 202a is formed is completely removed, A necessary BOX layer 208 is left between the fixing part 202 b and the first semiconductor substrate 104. Accordingly, as shown in FIGS. 10A4 to 10C4, the fixed portion 202 b is formed without being separated from the first substrate 204, and the movable portion 202 a is formed separately from the first substrate 204. it can. Examples of the etching method include HF dilution (for example, 50% HF is diluted to 10%) or wet etching using an NH ₄ F aqueous solution as an etching solution. Further, the movable part 202a can be separated from the first substrate 204 by dry etching. Note that the cross-sectional shape of the movable electrode 202 including the first film 201 and the movable portion 202a at this time is the end portion of the movable portion 202a due to the tensile stress of the first film 201 as illustrated in FIG. Is bent upward and lifted upward, so that it has a substantially arc shape convex downward. The shape of the upper surface of the movable electrode 202 is the same as that of the first film 201 shown in FIG.

(4) Formation of sealing material 206 (see FIG. 9B)
A sealing material 206 is formed on the second substrate 204 on which the movable electrode 202 is formed. At this time, the sealing material 206 is formed to have a frame shape so as to surround the movable electrode 202 as illustrated in FIGS. 8 and 9B. The sealing material 206 serves to maintain a gap that secures a displacement range of the movable electrode 202 by bonding the first substrate 204 and the second substrate 205 in a process to be described later. Therefore, as shown in FIG. 8, the thickness of the sealing material 206 in the Z-axis direction is larger than the thickness of the fixed portion electrode 203d on the second substrate 205 to be joined to the first substrate 204 in a later step. And In addition, about the material and manufacturing method of the sealing material 206, since the material and manufacturing method similar to the sealing material 106 concerning 1st Embodiment can be used, it abbreviate | omits about detailed description.

  Through the above steps, the first substrate 204 on which the movable electrode 202 and the sealing material 206 are formed is formed. Next, a method for manufacturing the second substrate 205 shown in FIG. 8 will be described with reference to FIG.

(5) Formation of the second substrate 205 (see FIGS. 11A and 11B)
As the second substrate 205, a glass substrate, a semiconductor substrate, an insulating resin substrate, or the like may be used similarly to the second substrate 105 according to the first embodiment. Hereinafter, a case where a glass material is used as the second substrate 205 will be described. As shown in FIG. 11A, a conductive material 209 having conductivity is formed on the second substrate 205 by sputtering, screen printing, a CVD (Chemical Vapor Deposition) method, an electrolytic plating method, or the like. Next, as shown in FIG. 11B, a mask (not shown) is formed to process the convex portion 209a for increasing the height of the fixed portion electrode 203d to be higher than the fixed electrode 203a. The protrusion 209a is formed by etching the conductive material 209 through the mask. Next, as illustrated in FIG. 11C, a conductive material 212 is formed on the second substrate 205 so as to cover the convex portion 209 a and the formation position of the fixed electrode 203 a. The conductive material 212 may be formed by a method similar to that of the conductive material 209. Next, as shown in FIG. 11D, a mask (not shown) for processing the fixed electrode 203a and the fixed portion electrode 203d is formed, and the conductive material 212 is etched through the mask. A recess 212k is formed except for the position where the fixed electrode 203a and the fixed portion electrode 203d are formed. As an etching method, dry etching can be used. As a result, the fixed electrode 203a and the fixed portion electrode 203d having a height higher than that of the fixed electrode 203a are formed.

(6) Formation of through electrode 103b and wiring terminal 103c (see FIGS. 11E to 11G)
Next, as illustrated in FIGS. 11E to 11G, the second substrate 205 on which the fixed electrode 203a and the fixed portion electrode 203d illustrated in FIG. ) To (e), the wiring terminals 203c and 203e connected to the fixed part electrode 203d and the fixed electrode 203a, respectively, are formed as shown in FIG. The wiring terminals 203c and 203e are connected to the fixed electrode 203a and the fixed portion electrode 203d by through electrodes 203b and 203g formed inside the second substrate 205, respectively. As shown in FIG. 11E, a through-hole 205k is formed on the second substrate 205 on which a predetermined mask is formed in accordance with the formation positions of the fixed electrode 203a and the fixed portion electrode 203d, by laser, sandblasting, or the like. As shown in FIGS. 11 (f) and 11 (g), the inside of the through-hole 205 k is conductive using sputtering, conductive paste filling (screen printing), CVD (Chemical Vapor Deposition) method, electrolytic plating method, or the like. By forming a conductive material 213 having a property, forming a mask (not shown) for processing the wiring terminals 203c and 203e, and etching the conductive material 213 through the mask, the through electrodes 203b and 203g In addition, wiring terminals 203c and 203e may be formed. For example, a conductive layer made of polycrystalline silicon (Poly-Si) containing a conductive impurity is deposited on the inner wall of the through hole 205k by CVD to form the through electrodes 203b and 203g and the wiring terminals 203c and 203e. Also good. As the conductive layer, for example, a metal material (Ti, Cu, etc.) may be used in addition to polycrystalline silicon. Further, the wiring terminals 203c and 203e are formed by, for example, a pattern made of Al so as to be electrically connected to the through electrodes 203b and 203g so as to correspond to the upper surface portions where the through electrodes 203b and 203g are exposed. Also good. These wiring terminals 203c and 203e are connected to a circuit for processing a mechanical quantity detection signal in an electronic device in which the mechanical quantity sensor 200 is mounted.

(7) Bonding of the first substrate 204 and the second substrate 205 (see FIGS. 9B and 9C)
A first substrate 204 on which the movable electrode 202 and the sealing material 206 are formed (see FIG. 9B), and a second substrate 205 on which the fixed electrode 203a and the fixed portion electrode 203d are formed (see FIG. 9C). Are joined through a sealing material 206. At this time, as shown in FIG. 8, the fixed portion electrode 203 d formed on the second substrate 205 and the first film 201 on the fixed portion 202 b formed on the first substrate 204 are electrically connected. As described above, the first substrate 204 and the second substrate 205 are aligned and bonded. Accordingly, the fixed electrode 203a formed on the second substrate 205 and the end of the movable electrode 202 formed on the first substrate 204 are joined so as to be in electrical contact. Note that the wiring terminals 203c and 203e described above may be formed on the second substrate 205 after the first substrate 204 and the second substrate 205 are joined.

(8) Encapsulation of damping material (see Fig. 8)
After bonding the first substrate 204 and the second substrate 205 with the sealing material 206, a damping material may be sealed in the space 207 between the first substrate 204 and the second substrate 205. In addition, since the material and manufacturing method of a damping material are the same as that of the damping material which concerns on 1st Embodiment, detailed description is abbreviate | omitted.

  Through the above steps, the mechanical quantity sensor 200 according to the second embodiment of the present invention is formed. According to the mechanical quantity sensor 200 according to the second embodiment, similarly to the mechanical quantity sensor 100 according to the first embodiment, the magnitude and direction of the applied external force, the acceleration, and the like are determined using the movable electrode 102 and the fixed electrode. It can be configured to detect a change from contact (ON) to non-contact (OFF) with 103a. Thereby, compared with the case where the change from non-contact (OFF) to contact (ON) is detected, it becomes possible to improve detection sensitivity more. Furthermore, since it can manufacture with the simple manufacturing method mentioned above, manufacturing cost can be reduced.

(Third embodiment)
<Structure of mechanical quantity sensor>
Next, a basic structure of a mechanical quantity sensor according to the third embodiment of the present invention will be described with reference to FIGS. FIG. 12 is a plan view showing a schematic structure of a mechanical quantity sensor 300 according to the third embodiment. FIG. 12A is a plan view showing a structure in which the first film 301 is arranged on the first substrate 304. (B) is a plan view showing a structure in which a sealing material 306 is arranged on the first substrate 304 shown in (a), and (c) is a fixed electrode on the second substrate 305. It is the top view which showed the structure which has arrange | positioned 303a-1-3 and the fixed part electrode 303d. FIG. 13 is a cross-sectional view illustrating a schematic structure of a mechanical quantity sensor 300 according to the third embodiment. FIG. 13A illustrates a state in which the first substrate 304 and the second substrate 305 illustrated in FIG. It is sectional drawing of the mechanical quantity sensor 300 seen from the (i) line | wire of (b), (b) is seen from the (ii) line | wire after joining the 1st board | substrate 304 and the 2nd board | substrate 305 which were shown in FIG. It is sectional drawing of the mechanical quantity sensor 300, (c) is sectional drawing of the mechanical quantity sensor 300 seen from the (iii) line | wire after joining the 1st board | substrate 304 and the 2nd board | substrate 305 shown in FIG. is there. FIG. 14 is a table for explaining the operation of the mechanical quantity sensor 300 according to the third embodiment of the present invention. The direction and magnitude of the applied external force, and the plurality of movable electrodes 302-1 to 30-3 are fixed. It is a table | surface showing conduction | electrical_connection relationship with electrode 303a-1-3.

  Referring to FIGS. 12 and 13, the mechanical quantity sensor 300 according to the third embodiment is the second embodiment in that it includes a plurality of movable electrodes 302-1 to 30-3 and a plurality of fixed electrodes 303 a-1 to 303. Unlike the mechanical quantity sensor 200 according to the above, the other configuration is the same as that of the mechanical quantity sensor 200. The mechanical quantity sensor 300 includes a first substrate 304, a fixed portion 302b formed on the first substrate 304, and a plurality of movable portions formed at one end supported by the fixed portion 302b and separated from the first substrate 304. 302a-1 to 302a, and a plurality of movable electrodes 302-1 to 30-3 including first films 301a-1 to 301a-3 formed respectively on the plurality of movable parts 302a-1 to 302a, and a plurality of movable electrodes 302- A plurality of fixed electrodes 303a-1 to 303a-3 arranged adjacent to the other end portions of 1 to 3 in the mechanical quantity detection direction, and a second substrate 305 on which the plurality of fixed electrodes 303a-1 to 303a-3 are formed. Including. The plurality of movable electrodes 302-1 to 302-1 may be connected to one fixed portion 302 b as shown in the figure, or may be connected to a plurality of fixed portions 302 b (not shown). The plurality of movable electrodes 302-1 to 302-3 are disposed on the first substrate 304 at intervals. The second substrate 305 includes a plurality of fixed electrodes 303a-1 to 303c, a fixed part electrode 303d, and wiring terminals 303c that are electrically connected to the fixed electrodes 303a-1 to 303d and the fixed part electrode 303d, respectively. −1 to 3 and 303e are formed. In addition, since the manufacturing method of each structure of the mechanical quantity sensor 300 is the same as the manufacturing method of each structure of the mechanical quantity sensor 200, detailed description is abbreviate | omitted.

<Operation of mechanical quantity sensor>
Next, the operation of the mechanical quantity sensor 300 according to the third embodiment will be described with reference to FIG. FIG. 14 is a table for explaining the operation of the mechanical quantity sensor 300 shown in FIGS. 11 and 12, and the direction and magnitude of the applied external force, the plurality of movable electrodes 302-1 to 302, and the fixed electrode 303a-. It is a table | surface showing the electrical connection relationship with 1-3. Note that D1 to D3 shown in FIG. 14 are external forces applied from positive to negative (a direction from the top to the bottom in the figure in the Z-axis direction) applied to the mechanical quantity sensor 300, respectively. The relationship between the magnitudes of the external forces D1 to D3 is D1 <D2 <D3. In FIG. 14, the state in which the movable electrodes 302-1 to 30-3 are in contact with the fixed electrodes 303a-1 to 303a is indicated by “◯”, and the movable electrodes 302-1 to 30-3 are in contact with the fixed electrodes 303a-1 to 303a. The state which is not present is indicated by “x”.

  The movable electrodes 302-1 to 302-3 are in contact with the fixed electrodes 303a-1 to 303a-3, respectively, when no external force is applied. The movable electrode 302-1 has the shortest length among the plurality of movable electrodes 302-1 to 302-3, and the smallest external force D1 among the external forces D1 to D3 applied from positive to negative in the Z-axis direction. When applied, the end portion is displaced toward the negative direction of the Z-axis and moves away from the fixed electrode 303a-1. When the external force D2 and D3 are applied among the external forces D1 to D3, the end of the movable electrode 302-2 that is longer than the movable electrode 302-1 is displaced toward the negative direction of the Z-axis, It leaves | separates from the fixed electrode 303a-2. When the external force D1 to D3 is applied, the end of the movable electrode 302-3 having a length longer than that of the movable electrode 302-2 is displaced toward the negative direction of the Z axis and is separated from the fixed electrode 303a-3. .

  As described above, according to the mechanical quantity sensor 300 according to the third embodiment, the movable electrodes 302-1 to 30-3 that contact the fixed electrodes 303a-1 to 303a-3 are different depending on the magnitude of the external force. The direction and magnitude of the external force can be detected by detecting which one of the movable electrodes 302-1 to 30-3 is in contact with the fixed electrodes 303a-1 to 303 based on the presence or absence of conduction. In addition, according to the mechanical quantity sensor 300 according to the third embodiment, which of the plurality of movable electrodes 302-1 to 30-3 is in contact with the fixed electrodes 303a-1 to 303a with the passage of time. By detecting the presence or absence, not only the direction and magnitude of the external force but also the acceleration can be detected.

  The plurality of movable electrodes 302-1 to 302-3 are not limited to the shapes illustrated in FIGS. 12 and 13, and the length, width, thickness, and arrangement direction of each movable electrode 302-1 to Each may be formed differently. Thereby, the magnitude | size and direction of various external forces and acceleration can be detected according to a specification.

(Fourth embodiment)
<Structure of complex mechanical sensor>
Next, the structure of the composite mechanical quantity sensor 400 according to the fourth embodiment of the present invention will be described with reference to FIG. FIG. 15 is a diagram showing a schematic structure of a composite mechanical quantity sensor 400 according to the fourth embodiment of the present invention.

  “Composite mechanical quantity sensor” refers to two or more sensors having different characteristics such as detection direction, type of detected mechanical quantity, and measurement range of detected mechanical quantity on the same substrate or in the same substrate. In this case, the sensor is configured as one mechanical quantity sensor.

  As shown in FIG. 15, the X-axis mechanical quantity sensor 400x that detects the direction and magnitude of the external force in the X-axis direction on the same third substrate 401, detects the direction and magnitude of the external force in the Y-axis direction. A Y-axis dynamic quantity sensor 400y and a Z-axis dynamic quantity sensor 400z for detecting the direction and magnitude of the external force in the Z-axis direction are arranged. The X-axis mechanical quantity sensor 400x, the Y-axis mechanical quantity sensor 400y, and the Z-axis mechanical quantity sensor 400z each have the same shape as that of the mechanical quantity sensor 300 in FIG. Is not to be done. However, in the following description, it is assumed that the X-axis dynamic quantity sensor 400x, the Y-axis dynamic quantity sensor 400y, and the Z-axis dynamic quantity sensor 400z have the same configuration as the dynamic quantity sensor 300 according to the third embodiment. .

  15 is similar to the mechanical quantity sensor 300, the X-axis mechanical quantity sensor 400x is not illustrated, but includes a first substrate 304, a fixed portion 302b formed on the first substrate 304, and a fixed portion 302b. The plurality of movable portions 302a-1 to 302a-1 to 3 formed at one end thereof and spaced apart from the first substrate 304, and the first film 301a to be formed on the plurality of movable portions 302a-1 to 302a-3, respectively. A plurality of movable electrodes 302-1 to 30-3 including 1 to 3 and a plurality of fixed electrodes 303a-1 disposed in the mechanical quantity detection direction adjacent to the other ends of the plurality of movable electrodes 302-1 to 302-3. 3 and a second substrate 305 on which a plurality of fixed electrodes 303a-1 to 303a-3 are formed. When the movable electrodes 302-1 to 30-3 are bent by the application of an external force in the X-axis direction, the X-axis mechanical quantity sensor 400x includes the movable electrodes 302-1 to 303 and the fixed electrodes 303a-1 to 303a-3 according to the magnitude of the external force. Are arranged on the third substrate 401 so as to be in a non-contact state from a state of being in electrical contact with each other.

  Accordingly, as shown in FIG. 15, the X-axis mechanical quantity sensor 400x is placed on the third substrate 401 so that the surface of the first substrate 304 on which the movable electrodes 302-1 to 30-3 are formed faces the X-axis direction. Arranged and fixed. Similarly, the Y-axis mechanical quantity sensor 400y is arranged and fixed on the third substrate 401 so that the surface of the first substrate 304 on which the movable electrodes 302-1 to 30-3 are formed faces the Y-axis direction. The Similarly, the Z-axis mechanical quantity sensor 400z is arranged and fixed on the third substrate 401 so that the surface of the first substrate 304 on which the movable electrodes 302-1 to 30-3 are formed faces the Z-axis direction. Note that the third substrate 401 may be a printed circuit board on which another electronic circuit is mounted. Further, the X-axis dynamic quantity sensor 400x, the Y-axis dynamic quantity sensor 400y, and the Z-axis dynamic quantity sensor 400z may be respectively fixed on the third substrate 401 using an adhesive or the like.

  According to the composite mechanical quantity sensor 400 according to the fourth embodiment of the present invention having the above-described configuration, the direction and magnitude of the external force in the X-axis direction, the Y-axis direction, and the Z-axis direction are detected. Can do. Further, by detecting which of the plurality of movable electrodes is in contact with the fixed electrode based on the presence or absence of conduction over time, not only the direction and magnitude of the external force but also the acceleration can be detected. The composite mechanical quantity sensor 400 can be manufactured by the same simple manufacturing method as the above-described mechanical quantity sensors 100, 200, and 300, so that the manufacturing cost can be reduced. In the above, an example in which a plurality of mechanical quantity sensors are arranged on the third substrate 401 has been described. However, a plurality of mechanical quantity sensors are manufactured by dividing a region in the same substrate using the MEMS technology, and these are installed in the same chip. The type housed in In addition, as a combination of a plurality of mechanical quantity sensors, those having different detection directions, those having different elasticity or flexibility of the movable part, materials of the damping material or sealing conditions are made different, and responsiveness to external force is made different. It is possible to employ various combinations such as

(Processing circuit)
Hereinafter, a configuration example of a processing circuit that processes a mechanical quantity detection signal detected by the mechanical quantity sensor and the combined mechanical quantity sensors 100 to 400 shown in the first to fourth embodiments of the present invention will be described with reference to FIG. To explain.

  FIG. 16 is a diagram showing a circuit configuration of a processing circuit 1010 that processes a signal detected by a mechanical quantity sensor according to an embodiment of the present invention. The processing circuit 1010 includes a switch circuit 1005 and a detection circuit 1004. In this processing circuit 1010, the configuration of the mechanical quantity sensor is shown as a switch circuit 1005. As described in the first to fourth embodiments, the mechanical quantity sensor performs an operation in which a plurality of movable electrodes come into contact with a plurality of fixed electrodes in accordance with an applied external force. It can be expressed as a switch circuit 1005 in which switches are connected in parallel. Each switch in the switch circuit 1005 shown in FIG. 16 includes fixed contacts 1001 and 1003 and a movable piece 1002. The fixed contact 1001 corresponds to the fixed portion shown in the first to fourth embodiments, the movable piece 1002 corresponds to the movable electrode shown in the first to fourth embodiments, and the fixed contact 1003 corresponds to the first to fourth. This corresponds to the fixed electrode shown in the fourth embodiment. That is, the state in which the movable electrode is in contact with the fixed electrode without applying external force corresponds to the closed state (hereinafter referred to as the ON state) of the movable piece 1002 of each switch, and the movable electrode is fixed by applying external force. The state of non-contact with the electrode corresponds to the open state (hereinafter referred to as the OFF state) of the movable piece 1002 of each switch.

The fixed contact 1001 of each switch is connected to the input stage of the mechanical quantity detection circuit 1004, and the fixed contact 1003 of each switch is grounded. Further, each line connecting the input stage of the fixed contacts 1001 and a physical quantity detection circuit 1004 is connected to the DC power supply V _CC or the AC power supply V _AC through the resistor r. In the case of the DC power supply V _CC, by electrostatic attraction, since the fixed electrode and the movable electrode is likely to cause the sticking phenomenon remains in contact may be an AC power source V _AC. In the case of the DC power supply _VCC , the movable electrode may be formed in a line contact or point contact with the fixed electrode, and the sticking phenomenon may be prevented by reducing the area of the contact surface. With this circuit configuration, when the movable piece 1002 of each switch is in the ON state, a “Low” signal is input to the input stage of the mechanical quantity detection circuit 1004 as a detection signal. When the movable piece 1002 of each switch is in the OFF state, a “Hi” signal is input as a detection signal to the input stage of the mechanical quantity detection circuit 1004.

  Similarly to the opening / closing operation of each switch in the switch circuit 1005, the detection circuit 1004 receives a “Hi” signal that is input according to the operation of each movable electrode that is in a non-contact state or a contact state depending on whether or not an external force is applied. And the state of "Low" is recognized, and the mechanical quantity detection signal which shows the magnitude | size and direction of the external force applied to the mechanical quantity sensor is output.

  Although not shown, a memory for storing the detection signal output to the detection circuit 1004 and the value of the external force in association with each other is prepared, and the magnitude of the external force corresponding to the detection signal is prepared from this memory. The indicated value may be output.

  As described above, according to the mechanical quantity sensors and the combined mechanical quantity sensors 100 to 400 according to the first to fourth embodiments of the present invention, it is not necessary to use an amplifier circuit or the like. Therefore, the peripheral circuit can be simplified. Thereby, a space is created when the mechanical quantity sensor and the combined mechanical quantity sensors 100 to 700 are mounted on the electronic device, so that the space can be used effectively and the manufacturing cost of the processing circuit 1010 can be reduced. Can do.

  The above-described mechanical quantity sensors and composite type mechanical quantity sensors 100 to 400 according to the first to fourth embodiments of the present invention are mounted on a circuit board on which an active element such as an IC is mounted, for example, wire bonding connection or the like. The mechanical quantity sensor and the electronic circuit can be provided as one electronic component by connecting the wiring terminal and an active element such as an electronic circuit board or IC by the known methods and materials. This electronic component can be distributed in the market by being mounted on a mobile terminal such as a game machine or a mobile phone. Hereinafter, a fifth embodiment will be described.

(Fifth embodiment)
In the fifth embodiment, an electronic circuit board 510 on which any one of the mechanical quantity sensors 100 to 400 shown in the first to fourth embodiments is mounted as a mechanical quantity sensor 500, and the electronic circuit. An example of the electronic device 600 on which the substrate 510 is mounted will be described.

  FIG. 17 is a perspective view illustrating a configuration example of the electronic circuit board 510 on which the mechanical quantity sensor 500 is mounted. In FIG. 17, a dynamic quantity sensor 500 corresponding to any one of the acceleration sensors 100 to 400 shown in the first to fourth embodiments and an IC chip 502 are mounted on a circuit board 501. The electronic circuit board 510 is configured. A configuration example of a portable information terminal 600 as an electronic device on which the electronic circuit board 510 is mounted is shown in FIG.

  FIG. 18 is a perspective view illustrating a configuration example of the portable information terminal 600. In FIG. 18, the portable information terminal 600 includes a display unit 601 and a keyboard unit 602. The electronic circuit board 510 is mounted inside the keyboard unit 602. The portable information terminal 600 has a function of storing various programs therein and executing communication processing, information processing, and the like by the various programs. In this portable information terminal 600, by using the acceleration detected by the mechanical quantity sensor 500 of the electronic circuit board 510 in the application program, for example, a function of detecting the acceleration at the time of dropping and turning off the power is added. It becomes possible to do.

  By mounting the electronic circuit board 510 on the portable information terminal 600 as described above, a new function can be realized and the convenience and reliability of the portable information terminal 600 can be improved. The electronic device on which the electronic circuit board 510 is mounted is not limited to the portable information terminal 600 described above, and can be applied to, for example, a display, a projector, a scanner, and the like.

  Mechanical quantity sensor ... 100, movable part ... 102a, fixed part ... 102b, movable electrode ... 102, fixed electrode ... 103a, first film ... 101, second film ... 110, first substrate ... 104, second substrate ... 105

Claims (17)

A substrate,
A fixing portion disposed on the substrate;
A plurality of movable electrodes including a movable portion supported at one end by the fixed portion and spaced apart from the substrate;
A fixed electrode disposed adjacent to the other end of each of the plurality of movable electrodes in the detection direction of the mechanical quantity;
A first terminal electrically connected to the movable electrode;
A second terminal electrically connected to the fixed electrode,
Each of the plurality of movable electrodes includes a thin film having an internal stress,
The other end portions of the plurality of movable electrodes are in electrical contact with the opposed fixed electrodes, respectively.
The mechanical quantity sensor according to claim 1, wherein the other end portions of the plurality of movable electrodes are displaced according to an applied external force and are not electrically in contact with the fixed electrode. A fixed part;
A plurality of movable electrodes including a movable part supported at one end by the fixed part and movable at the other end relative to the fixed part;
A fixed electrode disposed adjacent to each of the other ends of the plurality of movable electrodes;
A first terminal electrically connected to the movable electrode;
A second terminal electrically connected to the fixed electrode,
In the plurality of movable electrodes,
When no external force is applied, the movable electrode is bent, and the other end portions of the plurality of movable electrodes are in electrical contact with the opposed fixed electrodes,
The mechanical quantity sensor according to claim 1, wherein when the external force is applied, the other end portions of the plurality of movable electrodes are displaced according to the applied external force and are not electrically in contact with the fixed electrode.   The mechanics according to claim 1 or 2, wherein the thin film has conductivity, and the other end portions of the plurality of movable electrodes are in electrical contact with the fixed electrode through the thin film, respectively. Quantity sensor.   The mechanical quantity sensor according to any one of claims 1 to 3, wherein a damping material is disposed around the plurality of movable electrodes.   The mechanical quantity sensor according to claim 1, wherein the plurality of movable electrodes include movable electrodes having different lengths.   The mechanical quantity sensor according to claim 1, wherein the plurality of movable electrodes include movable electrodes having different widths or thicknesses.   The mechanical quantity sensor according to claim 1, wherein the plurality of movable electrodes include movable electrodes extending in different directions.   The length, the width, the thickness, and the arrangement direction of the plurality of movable electrodes are respectively determined according to the magnitude of the external force to be detected. The mechanical quantity sensor according to Crab.   The mechanical quantity sensor according to claim 1, wherein the other end portions of the plurality of movable electrodes have a shape in line contact or point contact with the fixed electrode.   10. The magnitude and direction of application of the external force are detected by detecting whether any of the plurality of movable electrodes is in contact with or not in contact with the fixed electrode. Mechanical quantity sensor.   6. The mechanical quantity according to claim 5, wherein the magnitude and the application direction of the external force are detected by detecting a state in which the plurality of movable electrodes having different lengths are in contact with or not in contact with the fixed electrode. Sensor.   A composite mechanical quantity sensor according to claim 1, wherein a plurality of the mechanical quantity sensors according to claim 1 are arranged on a third substrate in accordance with a direction in which an external force is detected. Forming a thin film having internal stress on the first substrate composed of a plurality of layers;
Etching the first substrate on which the thin film is formed, a fixed part disposed on the first substrate, and a movable part disposed at a distance from the first substrate with one end supported by the fixed part. Forming a plurality of movable electrodes including
On the second substrate, a fixed electrode is formed adjacent to the other end of each of the plurality of movable electrodes, and arranged in the mechanical quantity detection direction,
The surface of the first substrate on which the plurality of movable electrodes are formed and the surface of the second substrate on which the fixed electrodes are formed, and the other end of the plurality of movable electrodes are respectively connected to the fixed electrodes. A method of manufacturing a mechanical quantity sensor, characterized by joining so as to be in electrical contact.   The said 1st board | substrate and the said 2nd board | substrate are joined using a sealing material, A damping material is enclosed with the space between the said 1st board | substrate and the said 2nd board | substrate. Manufacturing method of mechanical quantity sensor. The mechanical quantity sensor according to any one of claims 1 to 11,
A wiring board on which the mechanical quantity sensor is mounted;
An electronic circuit board, comprising: an IC chip disposed on the wiring board and electrically connected to the mechanical quantity sensor. The combined mechanical quantity sensor according to claim 12,
A wiring board on which the composite mechanical quantity sensor is mounted;
An electronic circuit board, comprising: an IC chip disposed on the wiring board and electrically connected to the composite mechanical quantity sensor. Electronic circuit board according to claim 15 or 16,
A housing for housing the electronic circuit board;
An electronic apparatus comprising at least an input unit and an output unit electrically connected to the electronic circuit board.

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