JP2012049335A - Sealing type device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sealing type device and a method for manufacturing the sealing type device.SOLUTION: A sealing type device of this invention includes: a first substrate having a fixed part and a movable part located on the inner side of the fixed part; a second substrate covering above the fixed part and the movable part of the first substrate; a first sealing member located between the fixed part of the first substrate and the second substrate and sealing a space between the first substrate and the second substrate; and a second sealing member located between the fixed part of the first substrate and the second substrate and sealing the space between the first substrate and the second substrate at an outer peripheral part of the first sealing member.

Description

  The present invention relates to a sealed device in which a semiconductor substrate on which a movable part is formed is sealed with a sealing material, and a manufacturing method thereof.

  In recent years, various electronic devices have been reduced in size, weight, functionality, and functionality, and electronic components to be mounted have been required to have higher density. In response to such demands, an increasing number of electronic components are manufactured as semiconductor devices. For this reason, in addition to a semiconductor device manufactured as a circuit element, a sensor for detecting a mechanical quantity is also manufactured by using a manufacturing process of the semiconductor device, thereby achieving a reduction in size and weight. For example, in an acceleration sensor or an angular velocity sensor having a small and simple structure using a product in the field of MEMS (Micro Electro Mechanical Systems) or a MEMS device, a movable part that is displaced in response to an external force is formed on a semiconductor substrate. A type of sensor (so-called electrostatic capacitance type sensor) in which the displacement is detected using a capacitive element has been put into practical use.

  In such a device having a movable part that is displaced at high speed as a MEMS device, in order to stably displace the movable part, a structure in which the semiconductor substrate is sealed with a sealing material (for example, a glass substrate) is employed. The sealed sealing space is degassed or the like to eliminate the factor that hinders the displacement of the movable part. A device having a sealing structure in which such movable parts are hermetically sealed is referred to as a sealed device in this document. Sealed devices include SAW (Surface Acoustic Wave) elements, F-BAR (Thin Film Bulk Acoustic Waves Resonators) elements, mirror devices, and the like in addition to MEMS elements. In general, a capacitance type sensor has a weight part that can be displaced with a predetermined degree of freedom in a semiconductor substrate sandwiched between a pair of glass substrates, and the weight part can be displaced with acceleration or angular velocity. It is used as a weight part to detect. The displacement is detected based on the capacitance value of the capacitive element. In particular, in the capacitance type angular velocity sensor, the distance between the electrode and the movable portion is shortened in order to detect the change in the capacitance with high sensitivity.

  12A and 12B are diagrams illustrating an example of a capacitive sensor 100 as a sealed device, where FIG. 12A is a cross-sectional view illustrating a schematic configuration of the capacitive sensor 100, and FIG. 12B is a top view of FIG. It is the top view seen from. In FIG. 12, a capacitive sensor 100 includes a semiconductor substrate 101 on which a weight portion 101a supported by a flexible portion 101b is formed, a wiring layer 103 formed on the upper surface of the semiconductor substrate 101, and a weight portion 101a. A glass substrate 102 that covers an upper portion of the flexible portion 101 b and is bonded to the upper surface of the semiconductor substrate 101 with an adhesive 104. Note that in FIGS. 12A and 12B, a glass substrate bonded to the lower side of the semiconductor substrate 101 is not shown. The adhesive 104 is applied to the adhesion region 105 surrounded by a dotted line shown in FIG. 12B, and adheres the glass substrate 102 to the upper surface of the semiconductor substrate 101. By bonding the glass substrate 102 to the semiconductor substrate 101 in this way, an airtight space 110 is formed between the upper surface of the semiconductor substrate 101 and the lower surface of the glass substrate 102. In this case, a wiring layer 103 is formed on a part of the bonding surface between the semiconductor substrate 101 and the glass substrate 102. For this reason, a step is generated on the bonding surface, and anodic bonding that requires flatness of the bonding surface cannot be used, and bonding using an adhesive is used.

  Moreover, there exists an acceleration sensor described in patent document 1 as a sealing type device, for example. In this acceleration sensor, a spacer member is provided between the frame portion of the acceleration sensor chip and the peripheral portion of the flat plate-like stopper, and an adhesive that covers the spacer member is used to surround the frame portion of the acceleration sensor chip and the flat stopper. The part is bonded. Furthermore, as another sealed device, for example, there is a semiconductor sensor described in Patent Document 2. In this semiconductor sensor, an adhesive is formed on the entire bonding portion of the cover wafer, and the cover wafer is bonded to the SOI wafer on which the sensor is formed by this adhesive. Further, as another sealed device, for example, there is a semiconductor sensor described in Patent Document 3. In this semiconductor sensor, a semiconductor chip for displacement detection and an IC chip that also serves as a sealing member are joined via a die attach material.

JP 2006-317180 A JP 2009-264843 A JP 2010-73919 A

  However, in the above-described sealed device, an adhesive resin may be used as an adhesive. As the resin having adhesiveness, for example, a polyimide-based adhesive may be used. Polyimide-based adhesives have a sufficiently high adhesive strength, but are hygroscopic, so moisture from the outside air enters the airtight space to lower the degree of vacuum, and the adhesive changes in quality to lower the bonding strength. There was a possibility of deteriorating the performance of the sealed device. In addition, the adhesive is crushed by the load at the time of joining, and it is difficult to maintain the adhesive region and the height of the adhesive at desired conditions. For this reason, the height of the airtight space formed between the semiconductor substrate and the glass substrate cannot be made constant, which affects the operation of the weight portion and the flexible portion, and the reliability of the sealed device There was a possibility of lowering.

  In view of the above, an object of the present invention is to provide a sealed device and a method for manufacturing the same, which can prevent bonding failure when bonding a semiconductor substrate and a glass substrate and improve reliability.

  A sealed device according to an embodiment of the present invention includes a first substrate having a fixed portion and a movable portion located inside the fixed portion, and a second covering the fixed portion and the movable portion of the first substrate. A first sealing member disposed between the substrate, the fixed portion of the first substrate, and the second substrate, and sealing between the first substrate and the second substrate; and the first substrate A second sealing member that is disposed between the fixed portion and the second substrate and seals between the first substrate and the second substrate at an outer peripheral portion of the first sealing member. It is characterized by providing. According to this sealed device, the height of the hermetic space can be kept constant while improving the bonding strength between the first substrate and the second substrate during bonding, and the performance of the sealed device is prevented from deteriorating. Thus, reliability can be improved.

  Further, in the sealed device according to an embodiment of the present invention, the first substrate has a wiring layer on a surface of the fixed portion facing the second substrate, and the first sealing member and the The second sealing member may be disposed so as to straddle the wiring layer. According to this sealed device, even if there is a step on the bonding surface of the semiconductor substrate, the bonding strength between the first substrate and the second substrate can be maintained.

  In the sealed device according to an embodiment of the present invention, an organic member may be disposed as the first sealing member, and an inorganic member may be disposed as the second sealing member. According to this sealed device, the height of the airtight space can be kept constant by the inorganic member, and moisture and the like can be prevented from entering the airtight space from the outside.

  In the sealed device according to the embodiment of the invention, the first sealing member may be disposed so as to cover the second sealing member. According to this sealed device, it is possible to prevent external moisture from entering the airtight space while increasing the bonding strength between the first substrate and the second substrate.

  In the sealed device according to an embodiment of the present invention, a first organic member is disposed as the first sealing member, and the second organic member is different from the first organic member as the second sealing member. May be arranged. According to this sealed device, the bonding strength between the first substrate and the second substrate can be increased.

  The sealed device according to an embodiment of the present invention is disposed between the fixed portion of the first substrate and the second substrate, and the outer peripheral portions of the first sealing member and the second sealing member. Or you may further provide the 3rd sealing member which seals between the said 1st board | substrate and the said 2nd board | substrate in an inner peripheral part. According to this sealed device, the height of the hermetic space can be kept constant while improving the bonding strength between the first substrate and the second substrate during bonding, and the performance of the sealed device is prevented from deteriorating. Thus, reliability can be improved.

  In a method for manufacturing a sealed device according to an embodiment of the present invention, a first substrate is processed to form a fixed portion and a movable portion positioned inside the fixed portion, and the fixed portion of the first substrate and A second substrate that covers the movable portion is formed, a first sealing member is disposed between the fixed portion of the first substrate and the second substrate, and the fixed portion of the first substrate and the second substrate A second sealing member is disposed between the first substrate and the outer periphery of the first sealing member, and the first sealing member and the second sealing member are disposed between the first substrate and the second substrate. It is characterized by sealing with a member. According to this method for manufacturing a sealed device, the height of the hermetic space can be kept constant while improving the bonding strength between the first substrate and the second substrate during bonding, and the performance of the sealed device is deteriorated. This can be prevented and the reliability can be improved.

  Further, in the method for manufacturing a sealed device according to the embodiment of the present invention, a convex portion is formed on a surface of the second sealing member facing the first substrate or the second substrate, and the first substrate is formed. Or you may form an inorganic film in the position facing the said convex part of the surface facing the said 2nd sealing member of the said 2nd board | substrate. According to the manufacturing method of the sealed device, the bonding strength between the first substrate and the second substrate can be increased.

  Further, in the method for manufacturing a sealed device according to an embodiment of the present invention, a recess is formed on a surface of the second sealing member facing the first substrate or the second substrate, and the first substrate or A convex inorganic film may be formed at a position facing the concave portion of the surface of the second substrate facing the second sealing member. According to the manufacturing method of the sealed device, the bonding strength between the first substrate and the second substrate can be increased.

  According to the present invention, the height of the hermetic space can be kept constant while improving the bonding strength between the first substrate such as a semiconductor substrate and the second substrate such as a glass substrate at the time of bonding. Can be prevented, and a highly reliable sealed device and a method for manufacturing the same can be provided.

It is a figure which shows schematic structure of the acceleration sensor which concerns on the 1st Embodiment of this invention, (A) is a side view which shows schematic structure of the semiconductor substrate and glass substrate before joining, (B) is (A). It is a top view of a glass substrate. It is a figure which shows the manufacturing process of the acceleration sensor which concerns on the 1st Embodiment of this invention, (A) is a figure which shows the preparation process of a semiconductor substrate, (B) is a figure which shows the manufacturing process of a semiconductor substrate, (C () Is a figure which shows the formation process of a wiring layer, (D) is a figure which shows the manufacturing process of a glass substrate. It is a figure which shows schematic structure of the acceleration sensor which concerns on the 1st Embodiment of this invention, (A) is a side view which shows the structure of the acceleration sensor after joining, (B) is a top view of (A). . It is a figure which shows schematic structure of the acceleration sensor which concerns on the 2nd Embodiment of this invention, (A) is a side view which shows schematic structure of the acceleration sensor before joining, (B) is the outline of the acceleration sensor after joining. It is a side view which shows a structure. It is a figure which shows schematic structure of the acceleration sensor which concerns on the 3rd Embodiment of this invention, (A) is a side view which shows schematic structure of the acceleration sensor before joining, (B) is the outline of the acceleration sensor after joining. It is a side view which shows a structure. It is a figure which shows schematic structure of the acceleration sensor which concerns on the 4th Embodiment of this invention, (A) is a side view which shows schematic structure of the acceleration sensor before joining, (B) is the outline of the acceleration sensor after joining. It is a side view which shows a structure. It is a figure which shows schematic structure of the acceleration sensor which concerns on the 5th Embodiment of this invention, (A) is a side view which shows schematic structure of the semiconductor substrate and glass substrate before joining, (B) is (A). It is a top view of a glass substrate. It is a figure which shows schematic structure of the acceleration sensor which concerns on the 5th Embodiment of this invention, (A) is a side view which shows the structure of the acceleration sensor after joining, (B) is a top view of (A). . It is a figure which shows schematic structure of the acceleration sensor which concerns on the 6th Embodiment of this invention, (A) is a side view which shows schematic structure of the acceleration sensor before joining, (B) is the outline of the acceleration sensor after joining. It is a side view which shows a structure. It is a perspective view which shows schematic structure of the sensor board | substrate which concerns on the 7th Embodiment of this invention. It is a perspective view which shows schematic structure of the portable information terminal which concerns on the 7th Embodiment of this invention. It is a figure which shows schematic structure of the conventional acceleration sensor, (A) The side view of an acceleration sensor, (B) is a top view of (A).

(First embodiment)
In the first embodiment of the present invention, an example of an acceleration sensor will be described as a sealed device.

<Configuration of acceleration sensor>
FIG. 1 is a diagram showing a schematic configuration of an acceleration sensor 200 according to a first embodiment of the present invention. FIG. 1A shows a semiconductor substrate 201 (first substrate) and a glass substrate 202 (second substrate) before bonding. (B) is a top view of the glass substrate 202 of (A). In FIG. 1, the acceleration sensor 200 includes a semiconductor substrate 101 having a frame-shaped fixed portion 201a and a movable portion 201b located inside the fixed portion 201a, and a glass substrate 202. The movable part 201b includes a flexible part 201c and a weight part 201d supported by the flexible part 201c so as to be displaceable. The acceleration sensor 200 detects the displacement of the movable part 201b caused by the action of acceleration. Note that in FIG. 1A, a glass substrate bonded to the lower side of the semiconductor substrate 201 is not illustrated.

  As the semiconductor substrate 201, for example, an SOI (Silicon on Insulator) substrate configured by sequentially stacking a silicon film, a silicon oxide film, and a silicon substrate from the upper surface is used. Note that the thickness and size of the semiconductor substrate 201 are not particularly limited, and can be arbitrarily selected depending on the application, function, and the like. As shown in FIG. 1A, a wiring layer 203 is formed on the surface of the fixing portion 201a of the semiconductor substrate 201 facing the glass substrate 202. The wiring layer 203 is provided inside the semiconductor substrate 201 (a portion (not shown) that electrically detects displacement of the movable portion 201b) and outside the semiconductor substrate 201 (an external circuit electrically connected to the acceleration sensor 200). Board and the like). Note that, for example, a capacitance element, a piezoresistive element, a piezoelectric element, or the like may be used as the part that electrically detects the displacement of the movable portion 201b.

The glass substrate 202 includes a first bonding portion 206 and a second bonding portion 207 illustrated in FIG. 1B on a surface of the semiconductor substrate 201 facing the fixing portion 201a. The first joint portion 206 and the second joint portion 207 are sequentially arranged in an annular shape toward the outer periphery on the surface facing the fixed portion 201a. An adhesive 204 (first sealing member) made of an organic member shown in FIG. 1A is formed in the first bonding portion 206. As the adhesive 204, for example, it is preferable to use a polyimide-based adhesive (organic member) having high bonding strength and high airtightness. In the second bonding portion 207, an inorganic film 205 (second sealing member) made of an inorganic member shown in FIG. The inorganic film 205 may be formed of, for example, aluminum (Al), silicon (Si), nickel (Ni), copper (Cu), silicon oxide film (SiO ₂ ), silicon nitride film (SiN), or the like. For the inorganic film 205, it is desirable to use a material that will straddle the wiring layer 203 at the second bonding portion 207 and fill the step due to the wiring layer 203 in the bonding with the upper surface of the fixing portion 201 a. For this reason, it is preferable that the inorganic member used for the inorganic film 205 is, for example, an aluminum alloy or gold (Au) as a material that is easily deformed by a load at the time of bonding.

  The inorganic film 205 is preferably made of a material whose hardness is higher than that of the adhesive 204. By using such a material, the inorganic film 205 prevents the adhesive 204 from being crushed by a load when the semiconductor substrate 201 and the glass substrate 202 are joined, and the semiconductor substrate 201 and the glass substrate at the time of joining are prevented. It becomes easy to make the height between the two parts 202 (height of the airtight space formed between the semiconductor substrate 201 and the glass substrate 202) constant.

  In FIG. 1A, the thickness of the adhesive 204 before bonding is shown as t1, the width as w2, the thickness of the inorganic film 205 as t2, and the width as w3. A width obtained by adding the width w2 of the adhesive 204 and the width w3 of the inorganic film 205 is denoted as w1. The dimensions of the thicknesses t1 and t2 and the widths w1, w2, and w3 are appropriately changed according to the specifications of the acceleration sensor 200, and are not particularly limited. However, when the semiconductor substrate 201 and the glass substrate 202 are bonded, the adhesive 204 is crushed and bonded by a bonding load. Therefore, the thickness t2 of the inorganic film 205 takes into consideration the amount by which the adhesive 204 is crushed during bonding. It is desirable to make it thinner than the thickness t1 of the adhesive 204. For example, when the thickness t1 of the adhesive 204 is crushed from 1.5 μm to 1.0 μm by controlling the load during bonding, the inorganic film 205 may be formed to have a thickness t2 of 1.0 μm.

  In addition, since the inorganic film 205 has a lower hygroscopicity than the adhesive 204, as shown in FIG. 1, by disposing the inorganic film 205 outside the adhesive 204, it is more than the case where the conventional adhesive is used alone. It is possible to maintain the airtightness by suppressing the moisture or the like of the outside air from entering the airtight space, and it is possible to prevent the performance of the sealed device from deteriorating. Therefore, the inorganic film 205 is disposed close to the adhesive 204, and when the adhesive 204 is crushed, the inorganic film 205 spreads to the inorganic film 205 side so as to fill a gap between the bonding surfaces of the semiconductor substrate 201 and the glass substrate 202. It is desirable.

<Method for manufacturing acceleration sensor>
Next, a method for manufacturing the acceleration sensor 200 will be described with reference to FIG. 2 shows each manufacturing process based on the cross-sectional view of the acceleration sensor 100 shown in FIG.

(1) Preparation of semiconductor substrate (see FIG. 2A)
The above-described SOI substrate is prepared as the semiconductor substrate 201. The semiconductor substrate 201 is produced by SIMOX or a bonding method.

(2) Processing of semiconductor substrate (see FIG. 2B)
By forming a mask for processing the fixed portion 201a, the flexible portion 201c, and the movable portion 201d on the semiconductor substrate 201, and etching the semiconductor substrate 201 through the mask, the fixed portion 201a, the flexible portion 201c, and the weight A recess is formed at a position where the portion 201d is formed. As an etching method, a DRIE (Deep Reactive Ion Etching) method can be used.

(3) Formation of wiring layer (see FIG. 2C)
A wiring layer 203 is formed on the upper surface of the fixing portion 201 a of the semiconductor substrate 201. The wiring layer 203 is obtained by depositing a metal material such as Al, Al—Si, or Al—Nd by sputtering or the like and patterning it.

(4) Processing of glass substrate (see FIG. 2 (d))
An annular first joint 206 and second joint 207 shown in FIG. 1B are set in a region facing the fixed portion 201a on the surface of the glass substrate 202 facing the semiconductor substrate 201, and the second The inorganic film 205 may be formed by wet etching or plating of a sputtered film using aluminum (Al), nickel (Ni), copper (Cu), or the like on the bonding portion 207, or silicon (Si), silicon oxide The inorganic film 205 may be formed by forming a film (SiO ₂ ), a silicon nitride film (SiN), or the like. The thickness t2 of the inorganic film 205 is determined in consideration of the collapse amount when the adhesive 204 is bonded. Next, an adhesive 204 such as a polyimide-based adhesive for the thickness t1 in consideration of the load control at the time of bonding is applied to the bonding surface of the glass substrate 202 by, for example, spin coating, and then exposed to the first An annular pattern of adhesive 204 may be formed on the joint 206. When the inorganic film 205 is a metal film such as aluminum (Al), nickel (Ni), or copper (Cu), an insulating layer is formed in advance on the upper surface of the wiring layer 203 facing the metal film to May be prevented. The adhesive 204 formed on the glass substrate 202 is preferably degassed, for example, by heating at 250 ° C. for 30 minutes before being bonded to the semiconductor substrate 201.

(5) Bonding of semiconductor substrate and glass substrate (see FIGS. 3A and 3B)
The surface of the semiconductor substrate 201 on which the wiring layer 203 is formed and the surface of the glass substrate 202 on which the adhesive 204 and the inorganic film 205 are formed are aligned to face each other, and the semiconductor substrate 201 and the glass substrate 202 are controlled while controlling the bonding load. Join. At this time, for controlling the bonding load, for example, the chamber is sufficiently evacuated (for example, 10 minutes after reaching 10 ⁻³ Pa), and then a certain load is applied and the temperature is raised to 325 ° C. The adhesive 204 straddles the wiring layer 203, and a part of the adhesive 204 enters the bonding surface between the inorganic film 205, the wiring layer 203, and the fixing portion 201a. The semiconductor substrate 201 and the glass substrate 202 are brought into close contact with each other. In this bonding, the amount of crushing of the adhesive 204 is controlled by controlling the bonding load, the thickness t1 is controlled, and the adhesive 204 is prevented from being excessively crushed by the thickness t2 of the inorganic film 205. . By bonding the semiconductor substrate 201 and the glass substrate 202, an airtight space 210 is formed between the upper portion of the movable portion 201b of the semiconductor substrate 201 and the bonding surface of the glass substrate 202, as shown in FIG. . The height H of the hermetic space 210 is constant depending on the thickness t2 of the inorganic film 205. FIG. 3A is a cross-sectional view taken along line AA ′ of FIG.

  As described above, in the acceleration sensor 200 according to the first embodiment of the present invention, the thickness t <b> 2 is set on the bonding surface of the glass substrate 202 in consideration of the collapse amount of the adhesive 204 outside the adhesive 204. Since the film 205 is formed, the bonding strength between the semiconductor substrate 201 and the glass substrate 202 can be improved while suppressing the adhesive 204 from being excessively crushed during bonding. In addition, since the inorganic film 205 having a lower hygroscopicity than the adhesive 204 is provided outside the adhesive 204, it is possible to reliably prevent external moisture and the like from entering the airtight space 210. Further, the height H of the hermetic space 210 is kept constant by the inorganic film 205, and it is possible to prevent the operation of the movable portion 201b from being hindered. For this reason, it can prevent that the performance of the acceleration sensor 200 deteriorates, and can improve the reliability.

  In the first embodiment, an example in which a polyimide-based adhesive is used as the adhesive 204 has been described. However, the present invention is not limited to this. For example, a silicon-based resin, an epoxy-based resin, or the like may be used. Further, in the first embodiment, the case where the adhesive 204 and the inorganic film 205 are disposed on the glass substrate 202 side is shown, but the adhesive 204 and the inorganic film 205 may be disposed on the semiconductor substrate 201 side. Further, the glass substrate 202 is not limited, and for example, a semiconductor substrate or an insulating resin substrate may be used.

(Second Embodiment)
Next, in the second embodiment of the present invention, an example of an acceleration sensor in which the shape of the joint portion of the inorganic film is changed will be described with reference to FIG.

  FIG. 4 is a diagram showing a schematic configuration of an acceleration sensor 300 according to a second embodiment of the present invention, and (A) is a cross-sectional view showing a schematic configuration of a semiconductor substrate 201 and a glass substrate 202 before bonding. B) is a cross-sectional view illustrating a schematic configuration of the semiconductor substrate 201 and the glass substrate 202 after bonding. In FIG. 4, the same components as those of the acceleration sensor 200 shown in FIG. A plan view of the acceleration sensor 300 viewed from the upper surface side of the glass substrate 202 is substantially the same as that shown in FIG. 4A and 4B correspond to cross-sectional views taken along line AA ′ of FIG. 4A and 4B, the illustration of the glass substrate bonded to the lower side of the semiconductor substrate 201 is omitted.

  In FIG. 4A, an adhesive 204 and an inorganic film 305 are formed in the region facing the fixing portion 201a on the surface of the glass substrate 202 facing the semiconductor substrate 201, as shown in FIG. The joint portion 206 and the second joint portion 207 are formed in an annular shape. The inorganic film 305 is formed of, for example, a metal film such as aluminum (Al), and the tip thereof is formed in a triangular convex shape. A metal thin film 306 is formed on the upper surface of the fixing portion 201 a of the semiconductor substrate 201 facing the inorganic film 305. An insulating film 307 is formed on a portion of the metal thin film 306 that is in contact with the wiring layer 203, that is, on the upper surface of the wiring layer 203, in order to prevent the wiring layer 203 from being electrically short-circuited by the metal thin film 306. A metal thin film 306 is formed so as to straddle the insulating film 307. That is, in the manufacturing process shown in FIG. 2C, after the wiring layer 203 is formed, the insulating layer 307 is formed in a portion in contact with the inorganic film 305 on the upper surface, and then the wiring layer 203 and the insulating layer 307 are formed. As in the case of the inorganic film 305, a metal thin film 306 is formed in a ring shape so as to straddle the substrate.

  Since the manufacturing method of the acceleration sensor 300 according to the second embodiment of the present invention is almost the same as the manufacturing process shown in FIG. 2 in the first embodiment, its illustration and description are omitted. Further, the thickness t2 of the inorganic film 305 is determined in consideration of the amount of crushing of the adhesive 204 when the semiconductor substrate 201 and the glass substrate 202 are bonded. The adhesive 204 formed on the glass substrate 202 is preferably degassed, for example, by heating at 250 ° C. for 30 minutes before being bonded to the semiconductor substrate 201.

<Join of semiconductor substrate and glass substrate> (see FIG. 4B)
The surface of the semiconductor substrate 201 on which the wiring layer 203, the insulating layer 307 and the metal thin film 306 are formed and the surface of the glass substrate 202 on which the adhesive 204 and the inorganic film 305 are formed are aligned and faced to control the bonding load. The semiconductor substrate 201 and the glass substrate 202 are bonded together. At this time, the adhesive 204 is heated at, for example, 325 ° C. for 30 minutes, so that the heated adhesive 204 straddles the insulating layer 307, and a part of the adhesive 204 is bonded to the joint between the inorganic film 305 and the metal thin film 306. The semiconductor substrate 201 and the glass substrate 202 are brought into close contact with each other. In this bonding, the amount of crushing of the adhesive 204 is controlled by controlling the bonding load, the thickness t1 is controlled, and the adhesive 204 is prevented from being excessively crushed by the thickness t2 of the inorganic film 305. . By bonding the semiconductor substrate 201 and the glass substrate 202, an airtight space 310 is formed between the upper portion of the movable portion 201b of the semiconductor substrate 201 and the bonding surface of the glass substrate 202, as shown in FIG. . The height H of the airtight space 310 is constant depending on the thickness t2 of the inorganic film 305.

  As described above, in the acceleration sensor 300 according to the second embodiment of the present invention, the protrusion t with the thickness t <b> 2 in consideration of the crushing amount of the adhesive 204 is set outside the adhesive 204 on the bonding surface of the glass substrate 202. Since the metal thin film 307 is formed on the upper surface of the fixing portion 201a of the semiconductor substrate 201 facing the inorganic film 305, the semiconductor 204 is prevented from being excessively crushed during bonding. The bonding strength between the substrate 201 and the glass substrate 202 can be further improved. In addition, since the inorganic film 305 having a lower hygroscopicity than the adhesive 204 is provided outside the adhesive 204, it is possible to reliably prevent external moisture and the like from entering the airtight space 310. Further, the height H of the airtight space 310 is kept constant by the inorganic film 305, and it is possible to prevent the operation of the movable portion 201b from being hindered. For this reason, it can prevent that the performance of the acceleration sensor 300 deteriorates, and can improve the reliability. In the second embodiment, the case where the adhesive 204 and the inorganic film 305 are arranged on the glass substrate 202 side is shown, but the adhesive 204 and the inorganic film 305 may be arranged on the semiconductor substrate 201 side. Further, the glass substrate 202 is not limited, and for example, a semiconductor substrate or an insulating resin substrate may be used.

(Third embodiment)
Next, in the third embodiment according to the present invention, an example of an acceleration sensor in which the shape of the bonding portion of the adhesive is changed will be described with reference to FIG.

  FIG. 5 is a diagram showing a schematic configuration of an acceleration sensor 400 according to a third embodiment of the present invention, and (A) is a side view showing a schematic configuration of a semiconductor substrate 201 and a glass substrate 202 before bonding. B) is a side view showing a schematic configuration of the semiconductor substrate 201 and the glass substrate 202 after bonding. In FIG. 5, the same components as those of the acceleration sensor 200 shown in FIG. A plan view of the acceleration sensor 400 viewed from the upper surface side of the glass substrate 202 is substantially the same as that shown in FIG. FIGS. 5A and 5B correspond to cross-sectional views taken along line AA ′ of FIG. 5A and 5B, the illustration of the glass substrate bonded to the lower side of the semiconductor substrate 201 is omitted.

  In FIG. 5A, an adhesive 401 and an inorganic film 205 are formed in the region facing the fixing portion 201a on the surface of the glass substrate 202 facing the semiconductor substrate 201, as shown in FIG. The joint portion 206 and the second joint portion 207 are formed in an annular shape. The adhesive 401 is formed so that a polyimide-based adhesive or the like whose capacity is adjusted to cover the inorganic film 205 so as to have a thickness t1 in consideration of the load control at the time of bonding.

  Since the manufacturing method of the acceleration sensor 400 according to the third embodiment of the present invention is substantially the same as the manufacturing process shown in FIG. 2 in the first embodiment, its illustration and description are omitted. Further, the thickness t2 of the inorganic film 205 is determined in consideration of the amount of crushing of the adhesive 401 when the semiconductor substrate 201 and the glass substrate 202 are bonded. The adhesive 401 formed on the glass substrate 202 is preferably degassed, for example, by heating at 250 ° C. for 30 minutes before being bonded to the semiconductor substrate 201.

<Join of semiconductor substrate and glass substrate> (see FIG. 5B)
The surface of the semiconductor substrate 201 on which the wiring layer 203 is formed and the surface of the glass substrate 202 on which the adhesive 401 and the inorganic film 205 are formed are aligned and face each other, and the semiconductor substrate 201 and the glass substrate 202 are controlled while controlling the bonding load. Join. At this time, the adhesive 401 is heated, for example, at 325 ° C. for 30 minutes, so that the heated adhesive 401 straddles the wiring layer 203, and a part of the adhesive 401 is bonded to the bonding portion between the inorganic film 205 and the semiconductor substrate 201. The semiconductor substrate 201 and the glass substrate 202 are brought into close contact with each other. In this bonding, the amount of crushing of the adhesive 401 is controlled by controlling the bonding load, the thickness t1 is controlled, and the adhesive 401 is prevented from being excessively crushed by the thickness t2 of the inorganic film 205. . By bonding the semiconductor substrate 201 and the glass substrate 202, an airtight space 410 is formed between the movable portion 201 b of the semiconductor substrate 201 and the bonding surface of the glass substrate 202 as shown in FIG. 5B. . The height H of the airtight space 410 is constant depending on the thickness t2 of the inorganic film 205.

  As described above, in the acceleration sensor 400 according to the third embodiment of the present invention, the adhesive 401 is formed so as to cover the inorganic film 205 formed on the outer peripheral side on the bonding surface of the glass substrate 202. The bonding strength between the semiconductor substrate 201 and the glass substrate 202 can be further improved while suppressing the adhesive 401 from being crushed excessively. In addition, since the inorganic film 305 having lower hygroscopicity than the adhesive 401 is covered with the adhesive 401, it is possible to prevent external moisture and the like from entering the airtight space 310. Furthermore, the height H of the airtight space 410 is kept constant by the inorganic film 205, and it is possible to prevent the operation of the movable portion 201b from being hindered. For this reason, it can prevent that the performance of the acceleration sensor 300 deteriorates, and can improve the reliability. In the third embodiment, the adhesive 401 and the inorganic film 205 are disposed on the glass substrate 202 side. However, the adhesive 401 and the inorganic film 205 may be disposed on the semiconductor substrate 201 side. Further, the glass substrate 202 is not limited, and for example, a semiconductor substrate or an insulating resin substrate may be used.

(Fourth embodiment)
Next, in the fourth embodiment of the present invention, another example of the acceleration sensor in which the shape of the joint portion of the inorganic film is changed will be described with reference to FIG.

  FIG. 6 is a diagram illustrating a schematic configuration of an acceleration sensor 500 according to a fourth embodiment of the present invention, and FIG. 6A is a side view illustrating a schematic configuration of a semiconductor substrate 201 and a glass substrate 202 before bonding. B) is a side view showing a schematic configuration of the semiconductor substrate 201 and the glass substrate 202 after bonding. In FIG. 6, the same components as those of the acceleration sensor 200 shown in FIG. The plan view of the acceleration sensor 500 viewed from the upper surface side of the glass substrate 202 is substantially the same as that shown in FIG. 6A and 6B correspond to cross-sectional views taken along line AA ′ of FIG. In FIGS. 6A and 6B, a glass substrate bonded to the lower side of the semiconductor substrate 201 is not shown.

  In FIG. 6A, an adhesive 204 and an inorganic film 505 are provided in the region facing the fixing portion 201a on the surface of the glass substrate 202 facing the semiconductor substrate 201, as shown in FIG. The joint portion 206 and the second joint portion 207 are formed in an annular shape. The inorganic film 505 is formed of, for example, a metal film such as aluminum (Al), and a recess is formed at the tip thereof. A metal thin film 506 is formed on the upper surface of the fixing portion 201 a of the semiconductor substrate 201 facing the inorganic film 505 so as to fit into the concave portion of the inorganic film 505. An insulating film 507 is formed on the metal thin film 506 in contact with the wiring layer 203, that is, on the upper surface of the wiring layer 203, in order to prevent the wiring layer 203 from being electrically short-circuited by the metal thin film 306. A metal thin film 306 is formed so as to straddle the insulating film 507. That is, in the manufacturing process shown in FIG. 2C, after the wiring layer 203 is formed, the insulating layer 507 is formed in a portion in contact with the inorganic film 505 on the upper surface, and then the wiring layer 203 and the insulating layer 507 are formed. As in the case of the inorganic film 505, the metal thin film 506 is formed in a ring shape so as to straddle the substrate.

  Since the manufacturing method of the acceleration sensor 500 according to the fourth embodiment of the present invention is substantially the same as the manufacturing process shown in FIG. 2 in the first embodiment, its illustration and description are omitted. Further, the thickness t2 of the inorganic film 505 is determined in consideration of the amount of crushing of the adhesive 204 when the semiconductor substrate 201 and the glass substrate 202 are bonded. The adhesive 204 formed on the glass substrate 202 is preferably degassed, for example, by heating at 250 ° C. for 30 minutes before being bonded to the semiconductor substrate 201.

<Join of semiconductor substrate and glass substrate> (see FIG. 5B)
The surface of the semiconductor substrate 201 on which the wiring layer 203, the insulating layer 507 and the metal thin film 506 are formed and the surface of the glass substrate 202 on which the adhesive 204 and the inorganic film 505 are formed are aligned and faced to control the bonding load. The semiconductor substrate 201 and the glass substrate 202 are bonded together. At this time, the adhesive 204 is heated at 325 ° C. for 30 minutes, for example, so that the heated adhesive 204 straddles the insulating layer 507, and a part of the adhesive 204 is bonded to the joint between the inorganic film 505 and the metal thin film 506. The semiconductor substrate 201 and the glass substrate 202 are brought into close contact with each other. In this bonding, the amount of crushing of the adhesive 204 is controlled by controlling the bonding load, the thickness t1 is controlled, and the adhesive 204 is prevented from being excessively crushed by the thickness t2 of the inorganic film 505. . By bonding the semiconductor substrate 201 and the glass substrate 202, an airtight space 510 is formed between the movable portion 201b of the semiconductor substrate 201 and the bonding surface of the glass substrate 202, as shown in FIG. . The height H of the hermetic space 510 is constant depending on the thickness t2 of the inorganic film 505.

  As described above, in the acceleration sensor 500 according to the fourth embodiment of the present invention, the concave portion in which the thickness t <b> 2 is set outside the adhesive 204 on the bonding surface of the glass substrate 202 in consideration of the collapse amount of the adhesive 204. Since a metal thin film 507 is formed on the upper surface of the fixing portion 201a of the semiconductor substrate 201 opposite to the inorganic film 505, the semiconductor 204 is prevented from being excessively crushed during bonding. The bonding strength between the substrate 201 and the glass substrate 202 can be further improved. In addition, since the inorganic film 505 having lower hygroscopicity than the adhesive 204 is provided outside the adhesive 204, it is possible to reliably prevent external moisture and the like from entering the airtight space 510. Further, the height H of the airtight space 510 is kept constant by the inorganic film 505, and it is possible to prevent the operation of the movable portion 201b from being hindered. For this reason, it can prevent that the performance of the acceleration sensor 500 deteriorates, and can improve the reliability. In the fourth embodiment, the adhesive 204 and the inorganic film 505 are disposed on the glass substrate 202 side. However, the adhesive 204 and the inorganic film 505 may be disposed on the semiconductor substrate 201 side. Further, the glass substrate 202 is not limited, and for example, a semiconductor substrate or an insulating resin substrate may be used.

(Fifth embodiment)
Next, in the fifth embodiment according to the present invention, an example of an acceleration sensor in which the arrangement positions of the adhesive and the inorganic film are changed will be described with reference to FIGS.

  FIG. 7: is a figure which shows schematic structure of the acceleration sensor 600 which concerns on the 5th Embodiment of this invention, (A) is a side view which shows schematic structure of the semiconductor substrate 201 and the glass substrate 202 before joining, B) is a top view of the glass substrate 202 of (A). FIG. 8A is a side view showing a schematic configuration of the acceleration sensor 600 after bonding, and FIG. 8B is a top view of the acceleration sensor 600 of FIG. 7 and 8, the same components as those of the acceleration sensor 200 shown in FIG. Note that in FIG. 7A, a glass substrate bonded to the lower side of the semiconductor substrate 201 is not illustrated.

The glass substrate 202 includes a first bonding portion 606, a second bonding portion 607, and a third bonding portion 608 illustrated in FIG. 7B on a surface of the semiconductor substrate 201 facing the fixing portion 201a. The 1st junction part 606, the 2nd junction part 607, and the 3rd junction part 608 are sequentially arrange | positioned cyclically | annularly toward the outer periphery on the surface facing the fixing | fixed part 201a. An adhesive 604 (first sealing member) made of an organic member is formed on the second bonding portion 607. As the adhesive 604, for example, it is preferable to use a polyimide-based adhesive (organic member) having high bonding strength and high airtightness. In the first bonding portion 606 and the third bonding portion 608, an inorganic film 205 (second sealing member, third sealing member) made of an inorganic member shown in FIG. 7A is formed. The inorganic film 205 may be formed of, for example, aluminum (Al), silicon (Si), nickel (Ni), copper (Cu), silicon oxide film (SiO ₂ ), silicon nitride film (SiN), or the like. For the inorganic film 205, it is desirable to use a material that will straddle the wiring layer 203 at the second bonding portion 207 and fill the step due to the wiring layer 203 in the bonding with the upper surface of the fixing portion 201 a. For this reason, for example, an aluminum alloy or gold (Au) is preferably used for the inorganic film 605 as a material that easily deforms due to a load during bonding.

  The inorganic film 605 is preferably formed using a material whose hardness is higher than that of the adhesive 604. By using such a material, the inorganic film 605 prevents the adhesive 604 from being crushed by a load when the semiconductor substrate 201 and the glass substrate 202 are joined, and the semiconductor substrate 201 and the glass substrate at the time of joining are prevented. It becomes easy to make the height between the two parts 202 (height of the airtight space formed between the semiconductor substrate 201 and the glass substrate 202) constant.

  In FIG. 7A, the thickness of the adhesive 604 before bonding is shown as t1, the width as w2, the thickness of the inorganic film 605 as t2, and the width as w3. A width obtained by adding the width w2 of the adhesive 604 and the width w3 of the inorganic film 605 is denoted as w1. The dimensions of the thicknesses t1 and t2 and the widths w1, w2, and w3 are appropriately changed according to the specifications of the acceleration sensor 600, and are not particularly limited. However, when the semiconductor substrate 201 and the glass substrate 202 are bonded, the adhesive 604 is crushed and bonded by a bonding load. Therefore, the thickness t2 of the inorganic film 605 takes into account the amount by which the adhesive 604 is crushed during bonding. It is desirable to make it thinner than the thickness t1 of the adhesive 604. For example, when the thickness t1 of the adhesive 604 is crushed from 1.5 μm to 1.0 μm by controlling the load during bonding, the inorganic film 605 may be formed to have a thickness t2 of 1.0 μm.

  In addition, since the inorganic film 605 has lower hygroscopicity than the adhesive 604, as shown in FIG. 7, when the inorganic film 605 is disposed on the inner side and the outer side of the adhesive 604, bonding is performed only with the conventional adhesive. As a result, it is possible to keep moisture from the outside air from entering the airtight space and prevent the adhesive 604 from spreading inward to maintain the airtightness, and the performance of the acceleration sensor 600 is deteriorated. Can be prevented. Therefore, the inorganic film 605 is disposed close to the adhesive 604 so that when the adhesive 604 is crushed, the inorganic film 605 spreads toward the inorganic film 605 and fills the gap between the bonding surfaces of the semiconductor substrate 201 and the glass substrate 202. It is desirable.

  Since the manufacturing method of the acceleration sensor 600 according to the fifth embodiment of the present invention is almost the same as the manufacturing process shown in FIG. 2 in the first embodiment, its illustration and description are omitted. Further, the thickness t2 of the inorganic film 605 is determined in consideration of the amount of crushing of the adhesive 604 when the semiconductor substrate 201 and the glass substrate 202 are bonded. The adhesive 604 formed on the glass substrate 202 is preferably degassed by heating, for example, at 250 ° C. for 30 minutes before being bonded to the semiconductor substrate 201.

<Bonding of semiconductor substrate and glass substrate> (see FIGS. 8A and 8B)
The surface of the semiconductor substrate 201 on which the wiring layer 203 is formed and the surface of the glass substrate 202 on which the adhesive 604 and the inorganic film 605 are formed are aligned and face each other, and the semiconductor substrate 201 and the glass substrate 202 are controlled while controlling the bonding load. Join. At this time, the adhesive 604 is heated, for example, at 325 ° C. for 30 minutes, so that the heated adhesive 604 straddles the wiring layer 203, and a part of the adhesive 604 is bonded to the joint between the inorganic film 605 and the semiconductor substrate 201. The semiconductor substrate 201 and the glass substrate 202 are brought into close contact with each other. In this joining, the amount of crushing of the adhesive 604 is controlled by controlling the joining load, the thickness t1 is controlled, and the adhesive 604 is prevented from being crushed excessively by the thickness t2 of the inorganic film 605. . By bonding the semiconductor substrate 201 and the glass substrate 202, an airtight space 610 is formed between the upper portion of the movable portion 201b of the semiconductor substrate 201 and the bonding surface of the glass substrate 202, as shown in FIG. . The height H of the airtight space 610 is constant depending on the thickness t2 of the inorganic film 605. FIG. 8A is a cross-sectional view taken along line BB ′ of FIG.

  As described above, in the acceleration sensor 600 according to the fifth embodiment of the present invention, the thickness t <b> 2 is set on the bonding surface of the glass substrate 202 in consideration of the collapse amount of the adhesive 604 on the inside and outside of the adhesive 604. Since the formed inorganic film 605 is formed, the bonding strength between the semiconductor substrate 201 and the glass substrate 202 can be further improved while suppressing the adhesive 604 from being excessively crushed during bonding. In addition, since the inorganic film 605 having lower hygroscopicity than the adhesive 604 is provided on the inner side and the outer side of the adhesive 604, it is possible to prevent external moisture and the like from entering the airtight space 610. Further, the height H of the hermetic space 610 is kept constant by the inorganic film 605, so that the operation of the movable portion 201b can be prevented from being hindered. For this reason, it can prevent that the performance of the acceleration sensor 600 deteriorates, and can improve the reliability. In the fifth embodiment, the adhesive 604 and the inorganic film 605 are disposed on the glass substrate 202 side. However, the adhesive 604 and the inorganic film 605 may be disposed on the semiconductor substrate 201 side. Further, the glass substrate 202 is not limited, and for example, a semiconductor substrate or an insulating resin substrate may be used. Furthermore, in the sixth embodiment, the case where the inorganic film 205 (outer side) / adhesive 604 / inorganic film 205 (inner side) are arranged in this order has been described. However, the present invention is not limited to this. ) / Inorganic film / adhesive (inner side).

(Sixth embodiment)
Next, in the sixth embodiment of the present invention, an example of an acceleration sensor that is bonded using two adhesives having different hardness will be described with reference to FIG.

  FIG. 9 is a diagram illustrating a schematic configuration of an acceleration sensor 700 according to a sixth embodiment of the present invention, and FIG. 9A is a side view illustrating a schematic configuration of the semiconductor substrate 201 and the glass substrate 202 before bonding. B) is a side view showing a schematic configuration of the semiconductor substrate 201 and the glass substrate 202 after bonding. In FIG. 9, the same components as those of the acceleration sensor 200 shown in FIG. A plan view of the acceleration sensor 700 viewed from the upper surface side of the glass substrate 202 is substantially the same as that shown in FIG. FIGS. 9A and 9B correspond to cross-sectional views taken along line AA ′ of FIG. 9A and 9B, a glass substrate bonded to the lower side of the semiconductor substrate 201 is not shown.

  In FIG. 9A, an adhesive 204 (first organic member) and an adhesive 204 have a high hardness and low moisture absorption in a region facing the fixing portion 201a on the surface of the glass substrate 202 facing the semiconductor substrate 201. An organic member 705 (second organic member) is formed in an annular shape like the first joint portion 206 and the second joint portion 207 shown in FIG. As the adhesive 204, a polyimide adhesive or the like whose capacity is adjusted so as to have a thickness t1 in consideration of the load control at the time of joining is used. The organic member 705 can be made of, for example, an epoxy resin as a member having high hardness and low hygroscopicity due to the adhesive 204. The thickness t2 of the organic member 705 is desirably thinner than the thickness t1 of the adhesive 204 in consideration of the amount of the adhesive 204 being crushed during bonding.

  Since the manufacturing method of the acceleration sensor 700 according to the sixth embodiment of the present invention is almost the same as the manufacturing process shown in FIG. 2 in the first embodiment, its illustration and description are omitted. Further, the thickness t2 of the organic member 705 is determined in consideration of the amount of crushing of the adhesive 204 when the semiconductor substrate 201 and the glass substrate 202 are bonded. The adhesive 204 formed on the glass substrate 202 is preferably degassed, for example, by heating at 250 ° C. for 30 minutes before being bonded to the semiconductor substrate 201.

<Bonding of semiconductor substrate and glass substrate> (see FIG. 9B)
The surface of the semiconductor substrate 201 on which the wiring layer 203 is formed and the surface of the glass substrate 202 on which the adhesive 204 and the organic member 705 are formed are aligned and face each other, and the semiconductor substrate 201 and the glass substrate 202 are controlled while controlling the bonding load. Join. At this time, for example, the adhesive 204 is heated at 325 ° C. for 30 minutes, so that the heated adhesive 204 straddles the wiring layer 203, and a part of the adhesive 204 is bonded to the bonding portion between the organic member 705 and the semiconductor substrate 201. The semiconductor substrate 201 and the glass substrate 202 are brought into close contact with each other. In this joining, the amount of crushing of the adhesive 204 is controlled by controlling the joining load, the thickness t1 is controlled, and the adhesive 204 is prevented from being crushed excessively by the thickness t2 of the organic member 705. . By bonding the semiconductor substrate 201 and the glass substrate 202, an airtight space 710 is formed between the upper portion of the movable portion 201b of the semiconductor substrate 201 and the bonding surface of the glass substrate 202, as shown in FIG. 9B. . The height H of the airtight space 710 is constant depending on the thickness t2 of the organic member 705.

  As described above, in the acceleration sensor 700 according to the sixth embodiment of the present invention, the adhesive 204 has higher hardness and lower moisture absorption than the adhesive 204 on the outside of the adhesive 204 on the bonding surface of the glass substrate 202. Since the organic member 705 having a thickness t2 in consideration of the amount of crushing is formed, the bonding strength between the semiconductor substrate 201 and the glass substrate 202 can be further improved while suppressing the adhesive 204 from being excessively crushed during bonding. In addition, since the organic member 705 having lower hygroscopicity than the adhesive 204 is provided outside the adhesive 204, it is possible to reliably prevent external moisture and the like from entering the airtight space 710. Furthermore, the height H of the hermetic space 710 is kept constant by the organic member 705, and the operation of the movable portion 201b can be prevented from being hindered. For this reason, it can prevent that the performance of the acceleration sensor 700 deteriorates, and can improve the reliability. In the sixth embodiment, the case where the adhesive 204 and the organic member 705 are arranged on the glass substrate 202 side is shown, but the adhesive 204 and the organic member 705 may be arranged on the semiconductor substrate 201 side. Further, the glass substrate 202 is not limited, and for example, a semiconductor substrate or an insulating resin substrate may be used.

  In the first to sixth embodiments, the present invention is applied to the acceleration sensor. However, the present invention is not limited to this. For example, the present invention is applied to a sealed device such as an angular velocity sensor. Is also possible.

(Seventh embodiment)
In the seventh embodiment, a sensor in which any one of the acceleration sensors 200, 300, 400, 500, 600, and 700 shown in the first to sixth embodiments is mounted as the acceleration sensor 802. An example of the substrate 800 and the electronic device 900 on which the sensor substrate 800 is mounted will be described.

  FIG. 10 is a perspective view illustrating a configuration example of the sensor substrate 800 on which the acceleration sensor 802 is mounted. In FIG. 10, the sensor substrate 800 includes an acceleration sensor 802 corresponding to any one of the acceleration sensors 200, 300, 400, 500, 600, 700 shown in the first to sixth embodiments. IC chip 803 is mounted. FIG. 11 shows a configuration example of a portable information terminal 900 as an electronic device on which the sensor substrate 800 is mounted.

  FIG. 11 is a perspective view illustrating a configuration example of the portable information terminal 900. In FIG. 11, the portable information terminal 900 includes a display unit 901 and a keyboard unit 902. The sensor substrate 800 is mounted inside the keyboard unit 902. The portable information terminal 900 has a function of storing various programs therein and executing communication processing, information processing, and the like using the various programs. In this portable information terminal 900, a function such as, for example, detecting the acceleration at the time of dropping and turning off the power is added by using the acceleration detected by the acceleration sensor 802 on the sensor substrate 800 in the application program. It becomes possible.

  By mounting the sensor substrate 800 on the portable information terminal 900 as described above, a new function can be realized, and convenience and reliability of the portable information terminal 900 can be improved. The electronic device on which the sensor substrate 800 is mounted is not limited to the above-described portable information terminal 900, and can be applied to, for example, a display, a projector, a scanner, and the like.

200, 300, 400, 500, 600, 700, 802 ... acceleration sensor, 201 ... semiconductor substrate, 201a ... fixed part, 201b ... movable part, 201c ... flexible part, 201d ... weight part, 202 ... glass substrate, 203 ... Wiring layer, 204, 401 ... adhesive, 205, 305, 505, 605 ... inorganic film, 206 ... first joint, 207 ... second joint, 306 ... metal thin film, 307 ... insulating film, 705 ... organic Member, 800 ... sensor substrate, 900 ... portable information terminal.

Claims (10)

A first substrate having a fixed portion and a movable portion located inside the fixed portion;
A second substrate covering the fixed portion and the movable portion of the first substrate;
A first sealing member disposed between the fixed portion of the first substrate and the second substrate, and sealing between the first substrate and the second substrate;
A second sealing is disposed between the fixed portion of the first substrate and the second substrate, and seals between the first substrate and the second substrate at an outer peripheral portion of the first sealing member. And a member. The first substrate has a wiring layer on a surface of the fixing portion facing the second substrate,
The sealed device according to claim 1, wherein the first sealing member and the second sealing member are disposed so as to straddle the wiring layer.   The sealed device according to claim 1, wherein an organic member is disposed as the first sealing member, and an inorganic member is disposed as the second sealing member.   The sealed device according to claim 3, wherein the first sealing member is disposed so as to cover the second sealing member.   The first organic member is disposed as the first sealing member, and a second organic member different from the first organic member is disposed as the second sealing member. Sealed device.   The first substrate and the second substrate are disposed between the fixed portion of the first substrate and the second substrate, and the outer periphery or the inner periphery of the first sealing member and the second sealing member. The sealed device according to claim 1, further comprising a third sealing member that seals between the two. Processing the first substrate to form a fixed part and a movable part located inside the fixed part,
Forming a second substrate covering the fixed portion and the movable portion of the first substrate;
A first sealing member is disposed between the fixed portion of the first substrate and the second substrate;
A second sealing member is disposed between the fixed portion of the first substrate and the second substrate and on an outer peripheral portion of the first sealing member;
A method for manufacturing an encapsulated device, wherein a gap between the first substrate and the second substrate is sealed with the first sealing member and the second sealing member. Forming a convex portion on the surface of the second sealing member facing the first substrate or the second substrate;
The sealed device according to claim 7, wherein an inorganic film is formed at a position facing the convex portion of the surface facing the second sealing member of the first substrate or the second substrate. Method. Forming a recess on a surface of the second sealing member facing the first substrate or the second substrate;
8. The sealed device according to claim 7, wherein a convex inorganic film is formed at a position facing the concave portion of the surface of the first substrate or the second substrate facing the second sealing member. Manufacturing method.   An electronic apparatus comprising the sealed device according to any one of claims 1 to 6.

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