JP2007259439A - Micromachining type combinational composition element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a micromachining type combinational composition element which is protected by one time common package sealing in such a way that an inertia sensor structure, a diaphragm sensor structure, and especially a microphone are incorporated in one common silicon substrate. <P>SOLUTION: The micromachining type combinational composition element comprises: a substrate 1 provided with a front surface VS and a rear surface RS; first inertia type sensor devices 46a-46d provided with at least one bending beam equally loaded transmitters 46a-46d formed on the front surface VS; at least one diaphragm 25 formed on the front surface VS of the substrate 1; and a second diaphragm type sensor devices 25, 47a, 47b provided with at least one back pole 47a, 47b. The first sensor devices 46a-46d and the second sensor devices 25, 47a, 47b are sealed by a common capping device laminated on the front surface VS of the substrate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a micromachining type combination component. The invention also relates to a manufacturing method for the combination component.

  In principle, the present invention can be used for various types of micromachining type combination components, but in the following, the present invention and the problems underlying the present invention are related to capacitive silicon microphones or capacitive pressure sensors. Explain the point.

  From US Pat. Nos. 6,522,762 and US 6088463, capacitive microphones are known which can be produced on a silicon substrate by a micromachining process. A back chamber is necessary for the acoustic function of such a capacitive microphone. This back chamber can be realized by structured additional wafer bonding. In general, microphones are increasingly required in extremely large numbers (1.3 to 1.5 billion / year), for example, in the field of consumer electronics such as mobile phones and hi-fi devices, and in the automobile field for example for language input. ing.

  The manufacturing processes for such solid-state microphones known so far, however, are very laborious. The basic structure of a solid-state microphone has perforations on the backside of the wafer on the underside of the cantilever-shaped diaphragm on the wafer surface. In this case, for example, perforation is provided for the gas buffer mechanism. For example, perforation enables sound penetration from the backside of the wafer when the face is mounted face-down on a circuit board or hybrid circuit using flip chip bonding technology, for example.

  In the case of a capacitive microphone, the counter plate on the lower side of the diaphragm or bulk wafer serves as an electrical back electrode for the diaphragm, that is, the change in capacitance is an air gap capacitor formed by the diaphragm and the back electrode. And is converted into an electrical signal that reproduces the displacement of the diaphragm and thus the captured noise level.

From German Offenlegungsschrift 199 38 206 and 19971611, micromachining type acceleration sensors or rotational acceleration sensors are known. These sensors are manufactured on a silicon substrate by a surface micromachining process. In the literature such structures are also called inertial sensors. Such fragile components of the structure, especially capacitive measuring fingers that can be displaced horizontally with respect to the surface of the substrate, are generally protected from damage and contamination by sealing glass bonding of structured cap wafers. Has been.
US Patent Application Publication No. 6522762 US 6088463 Specification German Patent Application Publication No. 19938206 German Patent Application Publication No. 19719061 German Patent Application Publication No. 198474555 German Patent Application Publication No. 10065013

  Accordingly, an object of the present invention is to improve the micromachining type combination component of the type described at the beginning, and to integrate the inertial sensor structure and the diaphragm sensor structure, particularly the microphone, into one common silicon substrate. It is another object of the present invention to provide a micromachining type combination component which is protected by a single common package sealing.

  A further object of the present invention is to provide a corresponding manufacturing method suitable for manufacturing such a micromachining combination component.

  In order to solve this problem, in the configuration of the present invention, a first sensor device of inertia type having a substrate having a front surface and a back surface and at least one bending beam formed on the surface of the substrate. And a diaphragm-type second sensor device that is formed on the surface of the substrate and includes at least one diaphragm and at least one back electrode, wherein the first sensor device and the second sensor device The sensor device is sealed with a common cap device that is attached to the surface of the substrate.

Further, in order to solve the above problems, the method of the present invention includes the following steps:
Preparing a substrate with a front side and a back side;
Forming an inertial-type first sensor device comprising at least one bending beam on the surface of the substrate;
Forming a diaphragm type second sensor device comprising at least one diaphragm and at least one back electrode on a surface of the substrate;
Capping the first sensor device and the second sensor device by attaching a common cap device to the surface of the substrate;
Was to be implemented.

  The micromachining type combination component according to the present invention having the characteristics of claim 1 or the manufacturing method according to claim 10 can be applied to a large number of physical quantities, in particular, sound waves, pressures, 3 by the micromachining type combination component according to the present invention. It has the advantage that direction acceleration, degree of rotation, etc. can be measured simultaneously.

  This provides an advantageous multi-functionality coupled with a small required area and easy processing. The slight construction height and the packaging or mounting advantages associated with this construction height are achieved by back grinding. With chip scale packaging, no additional packaging is required. The same process sequence already established can be repeated multiple times to achieve different functionality. The conductive substrate, the conductive cap, and the ASIC bonded to them provide built-in EMV protection. The use of a single cap, preferably a cap wafer, for the acceleration sensor and microphone provides an area advantage and the possibility of an expanded back chamber.

  The idea underlying the present invention is that the inertial sensor structure and the diaphragm sensor structure, in particular the microphone, are built into one common silicon substrate and protected by a single common package seal. Another object of the present invention is to provide a combination component of micromachining type.

  Advantageously, the micromachining type component according to the invention is capped on one side and joined to the ASIC by flip chip attachment on the other side. The electrical contact formation is preferably derived from the sensor area / ASIC by a lateral conductor track or carried out vertically through the sensor substrate. A particularly advantageous use of such micromachined components is in mobile telephones and in the automatic adjustment of the display display in relation to the spatial position of the mobile telephone.

  Claims 2 to 9 or claims 11 to 17 describe advantageous refinements and refinements of the subject of the invention, respectively.

  According to an advantageous configuration, the second sensor device can be loaded by pressure through the cavity from the back side of the substrate.

  According to another advantageous configuration, the second sensor device can be loaded by pressure from the surface of the substrate through a through opening in the cap device.

  According to yet another advantageous configuration, the cap device has a first cavity located above the first sensor device and a second cavity located above the second sensor device. In this case, the first cavity and the second cavity are not fluidly connected.

  According to yet another advantageous configuration, the substrate comprises a structured non-conductive first sacrificial layer and a structured conductive first layer located on the first sacrificial layer. A structured non-conductive second sacrificial layer overlying the first layer; and a structured conductive second layer overlying the second sacrificial layer; Is provided. In this case, the bending beam is structured from a conductive second layer, in which case the diaphragm is structured from a conductive first layer.

  According to yet another advantageous configuration, a conductive contact connection region is formed inside the non-conductive first sacrificial layer, through which the structured conductive conductive material is formed. Each region of the first layer is connected to a substrate, in which case the substrate has a contact plug insulated by a separation groove. The conductive contact connection region is electrically connected to the back surface of the substrate through these contact plugs.

  According to yet another advantageous configuration, the evaluation IC is bonded to the contact plug via the contact connection surface.

  According to yet another advantageous configuration, the back electrode is structured from the substrate.

  According to yet another advantageous configuration, the back electrode is structured from a conductive second layer.

  In the following, the best mode for carrying out the present invention will be described in detail with reference to the drawings.

  In the drawings, the same reference numerals are given to the same components or components having the same function.

  FIGS. 1a, 1b, 1c, 1d and 1e show schematic longitudinal sectional views of the main manufacturing steps of a micromachining combination component according to a first embodiment of the invention.

  In FIG. 1 a, a silicon wafer substrate having a front surface VS and a back surface RS is indicated by reference numeral 1. A sacrificial layer 21 made of silicon oxide is deposited on the surface VS of the silicon wafer substrate 1, and this sacrificial layer 21 has a thickness of 4 μm in this example. On top of the sacrificial layer 21, a conductive layer 31 having a thickness of 5 μm is deposited and structured. The conductive layer 31 includes a first region 31a disposed corresponding to a later inertial sensor structure, and a second region disposed corresponding to a later diaphragm sensor structure (capacitive microphone in this case). 31b. As can be seen from FIG. 1a, the second region 31b of the conductive layer 31 has a through hole 36, which provides pressure compensation in the later microphone diaphragm. As the conductive layer 31, doped polysilicon is particularly advantageous.

  In another embodiment (not shown), the conductive layer 31 may consist of a layer stack, for example with polysilicon embedded in another dielectric layer, so that the stress inside the layer stack is advantageously Can be adjusted to a slight tensile stress. As is known, for example, from DE 198 47 455 and DE 10065013, a sacrificial layer is alternatively realized, for example, from SiGe, or a silicon layer surrounded by a protective oxide. Can be used as a conductive single layer or a conductive multiple layer.

  Further, as shown in FIG. 1b, another sacrificial layer 22 of silicon oxide is deposited on top of the first sacrificial layer 21 and the structured conductive layer 31 and is similarly structured. In this example, the second sacrificial layer 22 has a thickness of 10 μm. The second sacrificial layer 22 has three through holes 37 a, 37 b, and 37 c above the first region 31 a of the conductive layer 31, and above the second region 31 b of the conductive layer 31. In addition, one through hole 37d is provided. In the next process course, another conductive layer 4 of polysilicon is deposited and doped over the structure. In this example, the another conductive layer 4 has a thickness of 10 μm or more, for example, 30 μm. The other conductive layer 4 is connected to the first region 31a or the second region 31b of the mechanically and electrically conductive layer 31 through the through holes 37a, 37b, 37c, and 37d. . In the next process step, the metal bonding surfaces 5a, 5b are deposited and structured. These bonding surfaces 5a and 5b are suitable for wire bonding later as bonding lands, or suitable for eutectic bonding of a cap as a cap wafer as an under bump metallizing portion. Correspondingly, the metal bonding surfaces 5a, 5b are preferably made of aluminum or platinum or another standard metal layer sequence such as Al / Ti / Ni / Au for underbump metallization. .

  Then, as further illustrated in FIG. 1c, a so-called trench etching (or simply trenching) of the conductive layer 4 is performed using standard lithographic techniques. Trenching provides separation grooves 43 for insulating the metal bonding surfaces 5a, 5b and corresponding contact plugs 45a; 45b located below the bonding surfaces 5a, 5b. Via these contact plugs 45a, 45b, the metal bonding surfaces 5a; 5b are electrically connected to the corresponding regions 31a; 31b of the conductive layer 31 located below.

  In addition, a separation groove 41 is provided for positioning the beams 46a, 46b, 46c, 46d of the subsequent inertial sensor structure. In this case, the beams 46 a and 46 d are stationary beams of the inertial sensor structure, whereas the beams 46 b and 46 c are displaceable parallel to the surface VS of the substrate 1. It is a beam. In addition, back electrodes 47a, 47b of the subsequent diaphragm sensor structure, i.e. microphone buffering, and thus a separation groove 42 that defines the acoustic function of the diaphragm sensor structure are provided. Eventually, then, the silicon wafer substrate 1 is structured from the back surface RS so that the cavity 10 is brought to the back surface of the diaphragm sensor structure.

Following this, as shown in FIG. 1d, the sacrificial layers 21, 22 are preferably etched with respect to SiGe and Si by a gas HF etching process using, for example, ClF ₃ , XeF ₂ or the like. By this HF etching process, the inertial sensor structure is side-etched to form beams 46b and 46c that can be displaced horizontally relative to the surface VS. These beams 46b and 46c act as capacitors together with stationary beams 46a and 46d. The capacitance of this capacitor is variable in relation to the situation or acceleration. In the area of the diaphragm sensor structure, a cantilever diaphragm 25 is formed by an etching process. The diaphragm 25 can be displaced perpendicularly to the surface VS, and can detect a sound wave signal. As described above, in this case, the through hole 36 serves for pressure compensation between the cavity pressure and the ambient pressure. If this through hole 36 is not provided, the diaphragm sensor structure can act as a capacitive pressure sensor.

  Then, as shown in FIG. 1e, a prestructured cap wafer 7 with a first cavity 71 and a second cavity 72 to protect the inertial sensor structure and the diaphragm sensor structure is Bonded to the conductive layer 4 by the sealing glass region 6. In this case, the cap wafer 7 is structured and bonded so that the first cavity 71 is hermetically closed and the reference chamber (negative) pressure is adjusted in the first cavity 71. In the area of the diaphragm sensor structure, the cavity 72 serves as a microphone back chamber. In order to protect from contamination, moisture, etc., a sheet 19 can be applied to the back surface RS of the silicon wafer substrate 1. The sheet 19 can be structured if necessary.

  In another embodiment (not shown), the cavities 71, 72 can be simply formed in one cavity. For this purpose, the cap wafer 7 may be designed with a z-Anchlagen (not shown) known from the prior art. The micromachining type component manufactured in this way is fixed in position to a plate having an acoustic opening, and can be electrically contact-connected through metal bonding surfaces 5a and 5b.

  2a, 2b, 2c and 2d show schematic longitudinal sectional views of the main manufacturing steps of a micromachined combination component according to a second embodiment of the invention.

  According to FIG. 2a, the regions 31a, 31b of the conductive layer 31 are in electrical and mechanical contact with the silicon wafer substrate 1 via the conductive regions 31'a, 31'b. . These conductive regions 31 ′ a, 31 ′ b are structured from another conductive layer 31 ′ and are embedded in the first sacrificial layer 21. Furthermore, the conductive layer 4 ′ has a contact plug 45 c extending through the second sacrificial layer 22 and hitting another conductive region 31 ′ c of the conductive layer 31 ′. 'Is in electrical and mechanical contact connection with the semiconductor substrate 1. Here, the sacrificial layer 22 is etched from the surface VS in front of the sacrificial layer 21, and then cap sealing is performed. In this second embodiment, the cap wafer 7 'has a larger surface overlap with the silicon wafer substrate 1 (complete overlap in the case shown).

  Further, as shown in FIG. 2b, since the back surface RS of the silicon wafer substrate 1 is thinned, the final thickness of the silicon wafer substrate 1 is 200 μm or less, preferably 100 μm or less. Subsequently, metal bonding surfaces 5'a, 5'b, 5'c and 5'd are deposited on the back surface RS 'and structured on the thinned back surface RS' thus obtained. The

  Then, as further shown in FIG. 2c, the backside trench etching is performed by conventional lithographic techniques, whereby the cavity 10 'and the isolation groove 43' are structured from the backside RS 'of the silicon wafer substrate 1. The Following this, etching of the sacrificial layer 21 is performed from the back surface, thereby exposing the diaphragm 25. The isolation groove 43 ′ defines contact plugs 45 a, 45 e, 45 f, and these contact plugs 45 a, 45 e, 45 f connect the metal bonding surfaces 5 ′ a, 5 ′ b, 5 ′ c to the conductive region 31. 'A, 31'b, 31'c.

  Next, as shown in FIG. 2d, an evaluation IC (ASIC) 8 is applied to the back surface RS ′ of the silicon wafer substrate 1 by flip chip technology in the inverted state, in this case electrical and mechanical contact. The connection is realized via metal bonding surfaces 5'a, 5'b, 5'c. The metal bonding surface 5'd serves for electrical contact connection (not described in detail) of all components.

  In this example, the total height of the three chip stacks is the individual height, that is, the thickness of the cap wafer 7 ′ is about 380 μm, the thickness of the silicon wafer substrate 1 whose back surface is thinned is about 120 μm, and the evaluation IC chip 8 The thickness (including the solder surface) is 500 μm or less. This makes it clear that a total thickness of 1000 μm or less can be realized.

  FIG. 3 shows a schematic longitudinal sectional view of main manufacturing steps of a micromachining combination component according to a third embodiment of the present invention.

  In the embodiment of FIG. 3, the contact formation of the evaluation IC 8 ′ is performed by shifting the back surface laterally with respect to the thinned silicon wafer substrate 1. This results in a lateral protrusion D. On the side of the evaluation IC 8 'facing the silicon wafer substrate 1, there is another metallic bonding surface 5'e, which can serve for connection by wire bonding.

  FIG. 4 shows a schematic longitudinal sectional view of the main manufacturing steps of a micromachining combination component according to a fourth embodiment of the present invention.

  In the fourth embodiment of FIG. 4, the evaluation IC 8 ″ entirely covers the back surface RS ′ of the thinned silicon wafer substrate 1. The cap wafer 7 ″ is provided with a through opening 73, This through opening 73 serves as an acoustic opening for the diaphragm sensor structure. Another opening 74 in the cap wafer 7 ″ enables contact formation in the conductive layer 4 of the metal bonding surface 5a.

  FIG. 5 shows a schematic longitudinal sectional view of main manufacturing steps of a micromachining combination component according to a fifth embodiment of the present invention.

  The description of the fifth embodiment of FIG. 5 corresponds to the description of FIG. Unlike FIG. 1 d, in FIG. 5, the electrodes 47 ′ a, 47 ′ b are not provided on the conductive layer 4 but are structured from the silicon wafer substrate 1. This is made possible by a corresponding masking during the etching of the cavity 10.

  A schematic longitudinal section of the main manufacturing steps of a micromachining combination component according to a sixth embodiment of the invention is shown.

  The sixth embodiment of FIG. 6 can be understood as a combination of the first embodiment of FIG. 1d and the fifth embodiment of FIG. This is because the sixth embodiment already has the diaphragm 25, the electrodes 47a and 47b, and the electrodes 47'a and 47'b. Therefore, the difference evaluation of the diaphragm displacement is possible.

  Although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to these embodiments and can be variously improved.

  In particular, the order of the individual process steps can be interchanged without departing from the subject of the invention. This means, for example, whether the wafer backside treatment is performed before the wafer surface treatment or is completed before the wafer surface processing, or the wafer surface processing is performed first or is completed first, and then the wafer is processed. Backside processing can be performed. However, the individual method steps on the wafer surface and the wafer back surface can be alternately performed one after the other during the entire process, i.e. the wafer surface is first processed and then the wafer back surface is processed again, followed by the wafer surface and the wafer. Each back side is processed through one or more steps. The process process described above can be considered advantageous in many respects, but is not the only possible process process for the purposes of the present invention. In particular, the process parts or structure parts of the different embodiments can be interchanged with one another.

It is a schematic longitudinal cross-sectional view which shows the 1st manufacturing step of the main manufacturing steps of the micromachining type | mold combination component by 1st Example of this invention. It is a schematic longitudinal cross-sectional view which shows the 2nd manufacturing step in 1st Example. It is a schematic longitudinal cross-sectional view which shows the 3rd manufacturing step in 1st Example. It is a schematic longitudinal cross-sectional view which shows the 4th manufacturing step in 1st Example. It is a schematic longitudinal cross-sectional view which shows the 5th manufacturing step in 1st Example. It is a schematic longitudinal cross-sectional view which shows the 1st manufacturing step of the main manufacturing steps of the micromachining type | mold combination component element by 2nd Example of this invention. It is a schematic longitudinal cross-sectional view which shows the 2nd manufacturing step in 2nd Example. It is a schematic longitudinal cross-sectional view which shows the 3rd manufacturing step in 2nd Example. It is a schematic longitudinal cross-sectional view which shows the 4th manufacturing step in 2nd Example. It is a schematic longitudinal cross-sectional view of the micromachining type | mold combination component by 3rd Example of this invention. It is a schematic longitudinal cross-sectional view of the micromachining type | mold combination component by 4th Example of this invention. FIG. 9 is a schematic longitudinal sectional view of a micro-machining combination component according to a fifth embodiment of the present invention. It is a schematic longitudinal cross-sectional view of the micromachining type | mold combination component by 6th Example of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Silicon wafer substrate, VS surface, RS back surface, 21 1st sacrificial layer, 22 2nd sacrificial layer, 31 1st electroconductive layer, 31a 31 1st area | region, 31b 31 2nd area | region, 4 conductive polysilicon layer, 36 through-hole, 37a-37b through-hole, 5a, 5b, 5a ′ metal bonding surface, 41, 42, 43 separation groove, 10, 10 ′ cavity, 46a, 46b, 46c, 46d inertial sensor structure beam, 47a, 47b, 47'a, 47'b diaphragm sensor structure electrode, 25 diaphragm, 45a, 45b contact plug, 7, 7 ', 7 "cap wafer, 71, 72 cavity, 6 seal glass area, 19 sheet, 71 ', 72' cavity, 73, 74 through opening, 31 'conductive 31'a 31 'first region, 31'b 31' second region, 31'c 31 'third region, 5'a, 5'b, 5'c, 5'd metal Bonding surface, RS 'thinned back surface, 45 DEF contact plug, 45c contact plug, 8,8' evaluation IC, 43 'separation groove, 45d, 45g contact plug, fourth region of 31'd 31'

Claims (17)

In micromachining type combination components,
A substrate (1) comprising a front surface (VS) and a back surface (RS; RS ′);
An inertial-type first sensor device (46a-46d) comprising at least one bending beam (46a-46d) formed on the surface (VS) of the substrate (1);
At least one diaphragm (25) formed on the surface (VS) of the substrate (1) and at least one back electrode (47a, 47b; 47'a, 47'b; 47a, 47b, 47'a, A second sensor device (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b) provided with Provided;
The first sensor device (46a-46d) and the second sensor device (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b) A micromachining type combination component characterized by being capped with a common cap device (7; 7 '; 7 ") applied to the surface (VS) of the substrate (1).   The second sensor device (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b) is the back surface (RS; RS ') of the substrate (1). 2. A combination component of micromachining type according to claim 1, which can be loaded by pressure through the cavity (10; 10 ').   The second sensor device (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b) is a cap device from the surface (VS) of the substrate (1). The combination component of the micromachining type according to claim 1, which can be loaded by pressure through a through opening (73) in (7; 7 '; 7 ").   A cap device (7; 7 '; 7 ") has a first cavity (71; 71') located above the first sensor device (46a-46d) and a second sensor device (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b) and a second cavity (72; 72 '), The micromachining combination component of claim 1, wherein the cavity (71; 71 ') and the second cavity (72; 72') are not fluidly connected to each other.   A substrate (1) has a structured non-conductive first sacrificial layer (21) and a structured conductive first layer located on the first sacrificial layer (21) ( 31), a structured non-conductive second sacrificial layer (22) located on the first layer (31), and a structure located on the second sacrificial layer (22) A conductive second layer (4), and a bending beam (46a-46d) is structured from the conductive second layer (4), and the diaphragm (25) A micromachining type combination component according to any one of claims 1 to 4, characterized in that is structured from a conductive first layer (31).   Conductive contact connection regions (31'a to 31'c; 31'a to 31'd) are formed inside the non-conductive first sacrificial layer (21), and the contact connection regions (31 'A-31'c; 31'a-31'd) connect each region (31a, 31b) of the structured conductive first layer (31) to the substrate (1). The substrate (1) has contact plugs (45d to 45f; 45d to 45g) insulated by a separation groove (43 '), and the contact plugs (45d to 45f; 45d to 45g) are The electrically conductive contact connection region (31'a-31'c; 31'a-31'd) is electrically connected to the back surface (RS ') of the substrate (1). Micromachining type combination component.   The micromachining type combination component according to claim 6, wherein the evaluation IC is bonded to the contact plug (45d to 45f; 45d to 45g) via the contact connection surface (5'a to 5'c).   The back electrode (47a, 47b; 47'a, 47'b; 47a, 47b, 47'a, 47'b) is any one of claims 1 to 7, structured from a substrate (1). The micromachining type combination component described in the item.   The back electrode (47a, 47b; 47'a, 47'b; 47a, 47b, 47'a, 47'b) is structured from a conductive second layer (4). Micromachining type combination component. In a manufacturing method for a micromachining type combination component, the following steps:
Providing a substrate (1) having a front surface (VS) and a back surface (RS; RS ′);
An inertial type first sensor device (46a-46d) comprising at least one bending beam (46a-46d) is formed on the surface (VS) of the substrate (1);
Diaphragm type second sensor comprising at least one diaphragm (25) and at least one back pole (47a, 47b; 47'a, 47'b; 47a, 47b, 47'a, 47'b) Forming devices (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b) on the surface (VS) of the substrate (1);
A first sensor device (46a-46d) and a second sensor device (25, 47a, 47b; 25, 47'a, 47'b; 25, 47a, 47b, 47'a, 47'b), Cap sealing by applying a common cap device (7; 7 '; 7 ") to the surface (VS) of the substrate (1);
A manufacturing method for a micromachining type combination component, characterized in that:   A substrate (1) has a structured non-conductive first sacrificial layer (21) and a structured conductive first layer located on the first sacrificial layer (21) ( 31), a structured non-conductive second sacrificial layer (22) located on the first layer (31), and a structure located on the second sacrificial layer (22) Conductive second layer (4), and bending beam (46a-46d) is used for groove etching of conductive second layer (4) and non-conductive second sacrificial layer ( 22) is structured from the conductive second layer (4) by sacrificial layer etching, and the diaphragm (25) is grooved in the conductive second layer (4) and non-conductive first sacrificial layer. 11. Structured from a conductive first layer (31) by sacrificial layer etching of (21) and a non-conductive second sacrificial layer (22). Method.   Conductive contact connection regions (31'a to 31'c; 31'a to 31'd) are formed inside the non-conductive first sacrificial layer (21), and the contact connection regions (31'a ˜31′c; 31′a to 31′d), each region (31a, 31b) of the structured conductive first layer (31) is connected to the substrate (1), and the substrate ( 1) Contact plugs (45d to 45f; 45d to 45g) insulated by the separation grooves (43 ') are formed by groove etching, and the conductive properties are obtained through the contact plugs (45d to 45f; 45d to 45g). 12. The method according to claim 10 or 11, wherein the contact connection areas (31'a-31'c; 31'a-31'd) are electrically connected to the back surface (RS ') of the substrate (1).   13. The method according to claim 12, wherein the evaluation IC is bonded to the contact plug (45d to 45f; 45d to 45g) via the contact connection surface (5'a to 5'c).   14. The back electrode (47a, 47b; 47'a, 47'b; 47a, 47b, 47'a, 47'b) is structured from the substrate (1). the method of.   9. The method according to claim 8, wherein the back electrode (47a, 47b; 47'a, 47'b; 47a, 47b, 47'a, 47'b) is structured from a conductive second layer (4). .   16. A method according to any one of claims 10 to 15, wherein the substrate (1) is a wafer and the wafer is thinned from the back surface (RS).   The micromachining type component according to any one of claims 1 to 9 is used for display control in relation to a position in a mobile phone.

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