JP2012049207A - Method of forming bump - Google Patents

Method of forming bump Download PDF

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JP2012049207A
JP2012049207A JP2010187856A JP2010187856A JP2012049207A JP 2012049207 A JP2012049207 A JP 2012049207A JP 2010187856 A JP2010187856 A JP 2010187856A JP 2010187856 A JP2010187856 A JP 2010187856A JP 2012049207 A JP2012049207 A JP 2012049207A
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jig
substrate
conductive ball
bump
conductive
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Tomoaki Kojima
智明 小島
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Ulvac Seimaku KK
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Ulvac Seimaku KK
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Abstract

PROBLEM TO BE SOLVED: To efficiently form a bump in each electrode pad without temporarily adhering a conductive ball using flux, when forming the bumps in the plurality of electrode pads formed on one side of a substrate in a prescribed pattern respectively using the conductive balls.SOLUTION: This method uses a fixture 1 in which a plurality of hollow parts 11 for housing the conductive balls Bs respectively are formed correspondingly to the pattern, and includes a process for mounting the conductive ball to each of the hollow parts of the fixture, a process for disposing the substrate on the fixture by vertically aligning each hollow part with each electrode pad, and a process for at least making each conductive ball closely adhere to each electrode with vertical position relation between the fixture and the substrate held, and heating and fusing these conductive balls to form the bumps. The fixture is made up from a material which is not wetted when the conductive ball is fused while having a linear thermal expansion coefficient equal to that of the substrate.

Description

本発明は、導電性ボールを用いて、基板の片面に所定のパターンで形成された複数の電極パッド上にバンプを夫々形成するバンプ形成方法に関する。   The present invention relates to a bump forming method in which bumps are respectively formed on a plurality of electrode pads formed in a predetermined pattern on one side of a substrate using a conductive ball.

半導体装置の高密度集積化と高密度実装化を実現する技術として、例えばフリップチップ実装技術がある。フリップチップ実装においては、半導体チップの表面(回路面)に形成された電極端子たる電極パッドにバンプ突起電極を形成し、回路面を下に向けてプリント基板等に直接電気接続するものである。このバンプの形成に、金やはんだ等の金属製の導電性ボールを用いることが従来から知られている。   As a technique for realizing high-density integration and high-density mounting of a semiconductor device, for example, there is a flip chip mounting technique. In flip chip mounting, bump bump electrodes are formed on electrode pads which are electrode terminals formed on the surface (circuit surface) of a semiconductor chip, and are directly electrically connected to a printed circuit board or the like with the circuit surface facing downward. It has been conventionally known that a conductive ball made of metal such as gold or solder is used for forming the bump.

上記方法では、先ず、基板の片面に所定のパターンで形成された複数の電極パッド上に、導電性ボール保持用のフラックスを塗布し、その上に導電性ボールを載置して仮着し、次いで、リフロー(導電性ボールの加熱溶解)により電極に導電性ボールを電気的に接合することでバンプが形成される(例えば、特許文献1の記載参照)。フラックスの塗布には、メタルマスクやスクリーンマスクを用いた印刷法が一般に用いられる。他方で、導電性ボールの電極への搭載には、各電極に対応させて複数の貫通孔(開口部)が形成された配列冶具(マスク)を用いたものが知られている(特許文献2の記載参照)。即ち、配列冶具を、各貫通孔が各電極パッドを臨むように位置合わせして基板上に配置し、基板の外周縁を含む領域から配列冶具を吸着し、この状態で配列冶具の各貫通孔に導電性ボールを装入(搭載)する。配列冶具は、導電性ボールの装入後、リフローに先立って基板から脱離される。   In the above method, first, a conductive ball holding flux is applied onto a plurality of electrode pads formed in a predetermined pattern on one side of a substrate, and a conductive ball is placed thereon and temporarily attached. Next, bumps are formed by electrically joining the conductive balls to the electrodes by reflow (heating and melting of the conductive balls) (see, for example, the description of Patent Document 1). For the application of the flux, a printing method using a metal mask or a screen mask is generally used. On the other hand, for mounting conductive balls on electrodes, one using an arrangement jig (mask) in which a plurality of through holes (openings) are formed corresponding to each electrode is known (Patent Document 2). See description). That is, the alignment jig is positioned on the substrate so that each through hole faces each electrode pad, and the alignment jig is adsorbed from a region including the outer peripheral edge of the substrate, and in this state, each through hole of the alignment jig is disposed. A conductive ball is inserted into (installed). The array jig is detached from the substrate prior to reflow after the conductive balls are loaded.

ところで、導電性ボールの電極パッドへの仮着にフラックスを用いる場合、リフロー後に、例えば有機溶剤を用いてフラックス残渣を除去する洗浄工程が必要となる。このため、製造工程が多く、低コスト化を図ることが困難である。また、バンプを形成しようとするピッチが狭いような場合には、洗浄が不十分となり易く、フラックス残渣が残っていると、フラックス中に含まれる塩素等により電極パッドが腐食する等の不具合が生じる虞もある。   By the way, when using a flux for temporary attachment of the conductive ball to the electrode pad, a cleaning process is required after the reflow to remove the flux residue using, for example, an organic solvent. For this reason, there are many manufacturing processes, and it is difficult to achieve cost reduction. Also, when the pitch at which bumps are to be formed is narrow, cleaning is likely to be insufficient, and if the flux residue remains, problems such as corrosion of the electrode pad due to chlorine contained in the flux occur. There is also a fear.

特開2006−66413号公報JP 2006-66413 A 特開2006−303103号公報JP 2006-303103 A

本発明は、以上の点に鑑み、フラックスを用いて導電性ボールを仮着することなしに、効率よく各電極パッドにバンプを夫々形成できる低コストのバンプ形成方法を提供することをその課題とするものである。   In view of the above, the present invention has an object to provide a low-cost bump forming method capable of efficiently forming bumps on each electrode pad without temporarily attaching conductive balls using a flux. To do.

上記課題を解決するために、本発明は、導電性ボールを用いて、基板の片面に所定のパターンで形成された複数の電極パッドにバンプを夫々形成するバンプ形成方法であって、前記導電性ボールを夫々収容する複数の窪み部が上記パターンに対応させて形成された冶具を用い、この冶具の窪み部の各々に導電性ボールを夫々搭載する工程と、前記基板を、前記各窪み部と各電極パッドとを上下方向で位置合わせして前記冶具上に配置する工程と、前記冶具と前記基板との上下方向の位置関係を保持した状態で、少なくとも各導電性ボールを各電極に密着させ、これら導電性ボールを加熱溶融させてバンプを形成する工程と、を含み、前記冶具を、基板と同等の線熱膨張係数を有し、且つ、導電性ボールの溶解時に濡れないものから構成したことを特徴とする。   In order to solve the above-described problems, the present invention provides a bump forming method in which bumps are respectively formed on a plurality of electrode pads formed in a predetermined pattern on one side of a substrate using a conductive ball, Using a jig in which a plurality of depressions that respectively accommodate the balls are formed corresponding to the pattern, a step of mounting conductive balls in each of the depressions of the jig, and the substrate, and each depression A process of aligning each electrode pad in the vertical direction and placing the electrode pad on the jig, and holding the positional relationship in the vertical direction between the jig and the substrate, at least each conductive ball is brought into close contact with each electrode. And a step of forming a bump by heating and melting these conductive balls, and the jig is made of a material having a linear thermal expansion coefficient equivalent to that of the substrate and not wet when the conductive balls are dissolved. This The features.

本発明によれば、冶具を濡れないものから構成し、この冶具に形成した窪み内に導電性ボールを搭載した状態でこの導電性ボールを加熱溶解させて電極パッドに転写することとしたため、仮着用のフラックスは不要となる。その結果、バンプ形成時にフラックスを塗布する工程や導電性ボールの加熱溶解後に残るフラックス残渣の洗浄工程が不要となり、製造工程を少なくして、バンプ形成の更なる低コスト化を図ることができる。その上、電極パッドが腐食する等の不具合も生じない。   According to the present invention, the jig is made of a material that does not get wet, and the conductive ball is heated and melted and transferred to the electrode pad in a state where the conductive ball is mounted in the recess formed in the jig. Wear flux is not required. As a result, a step of applying a flux at the time of bump formation and a step of cleaning a flux residue remaining after the conductive ball is heated and melted are not required, and the number of manufacturing steps can be reduced to further reduce the cost of bump formation. In addition, problems such as corrosion of electrode pads do not occur.

ここで、窪み部の形状や冶具表面からの深さは、この窪み部の導電性ボールを収容できるものであれば、特に制限されるものではい。例えば、窪み部内に導電性ボールを搭載したとき、この導電性ボールの外周面が冶具表面から突出しないようなものであってもよい。このような場合には、導電性ボールが搭載された各窪み部と基板の各電極パッドとを上下方向で位置合わせして配置し、冶具と基板との上下方向の位置関係を保持した状態のまま(即ち、冶具と基板とを固定する)、これら冶具と基板を一緒に上下反転させれば、電極パッド上に導電性ボールが落下し、両者を互いに密着させることができる。   Here, the shape of the recess and the depth from the jig surface are not particularly limited as long as the recess can accommodate the conductive balls. For example, when a conductive ball is mounted in the recess, the outer peripheral surface of the conductive ball may not protrude from the jig surface. In such a case, the recesses where the conductive balls are mounted and the electrode pads of the substrate are aligned in the vertical direction, and the positional relationship in the vertical direction between the jig and the substrate is maintained. If the jig and the substrate are turned upside down as they are (that is, the jig and the substrate are fixed), the conductive ball falls on the electrode pad, and the two can be brought into close contact with each other.

ところで、導電性ボールを加熱溶解して電極パッドに転写するとき、冶具や基板も加熱され得るが、本発明では、基板と同等の線熱膨張係数を有するものとしたため、基板の各電極パッドに対して冶具上の各導電性ボールが位置ずれを起こすことを防止できる。本発明において、線熱膨張係数が同等とは、基板と冶具との線熱膨張係数が一致している場合(両者の材質が同一)の他、導電性ボールを所定温度に加熱する際に冶具や基板が夫々加熱されて熱膨張しても、窪み部に搭載された導電性パッドと、対応する電極パッドとの密着状態が保持される範囲内で両者の線熱膨張係数に差がある場合も含む。なお、本発明では、導電性ボールを加熱溶解して電極パッドに転写するため、バンプの体積が変化しない。このため、冶具に形成する窪み部の深さや形状は高精度にする必要がない。   By the way, when the conductive ball is heated and melted and transferred to the electrode pad, the jig and the substrate can also be heated, but in the present invention, it has a linear thermal expansion coefficient equivalent to that of the substrate. On the other hand, it is possible to prevent each conductive ball on the jig from being displaced. In the present invention, the linear thermal expansion coefficient is the same when the linear thermal expansion coefficient of the substrate and the jig are the same (both materials are the same), and when the conductive ball is heated to a predetermined temperature. When the thermal expansion of each substrate or substrate is heated, there is a difference in the coefficient of linear thermal expansion between the conductive pad mounted in the recess and the corresponding electrode pad within the range where the contact state is maintained. Including. In the present invention, since the conductive ball is heated and melted and transferred to the electrode pad, the volume of the bump does not change. For this reason, it is not necessary to make the depth and shape of the hollow part formed in the jig highly accurate.

本発明においては、前記窪み部は半球状であり、その内周面の曲率が導電性ボールの曲率より小さく設定されていることが好ましい。これによれば、窪み部内に導電性ボールを落とし込むだけで、窪み部内の所定位置に各導電性ボールが位置決めされる。そして、導電性ボールを所定温度に加熱する際に冶具や基板が夫々加熱されて熱膨張し、このとき、冶具と基板との熱膨張量に差が生じても、導電性ボールが窪み部内を追従して転動することで、電極パッドとの密着状態が確実に保持でき、導電性ボールの加熱溶解時に電極パッドに転写される。   In this invention, it is preferable that the said hollow part is hemispherical and the curvature of the internal peripheral surface is set smaller than the curvature of an electroconductive ball. According to this, each conductive ball is positioned at a predetermined position in the recess by simply dropping the conductive ball into the recess. When the conductive ball is heated to a predetermined temperature, the jig and the substrate are heated and thermally expanded. At this time, even if there is a difference in the amount of thermal expansion between the jig and the substrate, the conductive ball remains in the recess. By following and rolling, the contact state with the electrode pad can be reliably maintained and transferred to the electrode pad when the conductive ball is heated and melted.

また、上記課題を解決するために、本発明は、導電性ボールを用いて、基板の片面に所定のパターンで形成された複数の電極パッド上にバンプを夫々形成するバンプ形成方法であって、前記パターンに対応させて複数の貫通孔が形成された冶具を、各貫通孔が各電極パッドを臨むように位置合わせして基板上に配置する工程と、前記貫通孔の夫々に導電性ボールを落とし込んで各電極に当接させる工程と、前記冶具と前記基板との上下方向の位置関係を保持した状態で、導電性ボールを加熱溶融させてバンプを形成する工程と、を含み、前記冶具として、基板と同等の線熱膨張係数を有するものから構成してもよい。   Further, in order to solve the above problems, the present invention is a bump forming method in which bumps are respectively formed on a plurality of electrode pads formed in a predetermined pattern on one side of a substrate using a conductive ball, A jig in which a plurality of through holes are formed corresponding to the pattern is positioned on the substrate so that each through hole faces each electrode pad, and a conductive ball is placed on each of the through holes. A step of dropping and contacting each electrode, and a step of forming a bump by heating and melting a conductive ball while maintaining a vertical positional relationship between the jig and the substrate. The substrate may have a linear thermal expansion coefficient equivalent to that of the substrate.

上記請求項1乃至請求項3のいずれか1項に記載のバンプ形成方法であって、基板としてシリコンウエハに回路素子が形成されたものとし、この回路素子の各電極パッドに、鉛フリー半田バンプを形成する場合において、前記冶具をガラスまたはシリコン製とすればよい。   4. The bump forming method according to claim 1, wherein a circuit element is formed on a silicon wafer as a substrate, and a lead-free solder bump is provided on each electrode pad of the circuit element. When forming the jig, the jig may be made of glass or silicon.

(a)及び(b)は、本発明のバンプ形成方法の実施に使用される冶具を模式的に示す平面図及び部分断面図。(A) And (b) is the top view and partial sectional view which show typically the jig used for implementation of the bump formation method of this invention. 図1に示す冶具を用いて、本発明のバンプ形成方法を実施し得るリフロー炉を模式的に示す図。The figure which shows typically the reflow furnace which can implement the bump formation method of this invention using the jig shown in FIG. (a)〜(d)は、バンプ形成手順を概略的に説明する図。(A)-(d) is a figure which illustrates a bump formation procedure roughly. (a)〜(d)は、変形例に係る冶具を用いたバンプ形成手順を概略的に説明する図。(A)-(d) is a figure which illustrates schematically the bump formation procedure using the jig concerning a modification. (a)〜(d)は、他の変形例に係る冶具を用いたバンプ形成手順を概略的に説明する図。(A)-(d) is a figure which illustrates schematically the bump formation procedure using the jig which concerns on another modification.

以下、図面を参照して、基板を、シリコンウエハ(以下、「ウエハW」という)表面に例えば100〜200μmの範囲のピッチ(所定パターン)で電極パッドPが形成されたものとし、また、導電性ボールBを、例えば100〜150μmのはんだボールとし、リフロー炉を用いてこの電極パッドPにはんだバンプを形成する場合を例に本発明の実施形態のバンプ形成方法を説明する。   Hereinafter, with reference to the drawings, it is assumed that the substrate has electrode pads P formed on the surface of a silicon wafer (hereinafter referred to as “wafer W”) with a pitch (predetermined pattern) in the range of, for example, 100 to 200 μm. The bump forming method according to the embodiment of the present invention will be described by taking as an example the case where the conductive ball B is a solder ball of, for example, 100 to 150 μm and the solder bump is formed on the electrode pad P using a reflow furnace.

図1を参照して、1は、本発明のバンプ形成方法の実施に使用される冶具である。冶具1は、所定板厚の硼珪酸ガラス板から構成されている。冶具1の輪郭は、特に制限はなく、1辺がウエハ径より長い正方形やウエハ径より大径の円形とすることができる。冶具1の片面(図1中、上面)には、バンプを形成しようとする、ウエハW表面に形成された電極パッドPに夫々対応させて窪み部11が形成されている。各窪み部11は同一形状に形成され、例えば半球状である。また、窪み部11の内周面の曲率は、はんだボールBの曲率より小さく、また、はんだボールBを配置したとき、その外周面が冶具1上面から突出するように定寸されている。ウエハW上の電極パッドPに夫々対応する窪み部11は、例えば従来から半導体装置の製造工程にて利用されるフォトリソグラフィ工程を経て形成することができる。この場合、エッチングマスクとしては、フォトレジスト、金属膜またはフォトレジストと金属膜との積層膜が用いられ、また、エッチングに際しては、ふっ酸等によるウェットエッチング処理が利用される。はんだボールBについては、鉛フリーであって公知の方法で球状に形成されたものである。なお、鉛入りはんだ、金等の他の金属製ボールを用いることもできる。   Referring to FIG. 1, reference numeral 1 denotes a jig used for carrying out the bump forming method of the present invention. The jig 1 is composed of a borosilicate glass plate having a predetermined thickness. The outline of the jig 1 is not particularly limited, and can be a square having one side longer than the wafer diameter or a circle larger than the wafer diameter. On one side of the jig 1 (the upper surface in FIG. 1), recesses 11 are formed corresponding to the electrode pads P formed on the surface of the wafer W on which bumps are to be formed. Each hollow part 11 is formed in the same shape, for example, hemispherical. Further, the curvature of the inner peripheral surface of the recess 11 is smaller than the curvature of the solder ball B, and when the solder ball B is arranged, the outer peripheral surface is sized so as to protrude from the upper surface of the jig 1. The depressions 11 corresponding to the electrode pads P on the wafer W can be formed through, for example, a photolithography process conventionally used in a semiconductor device manufacturing process. In this case, a photoresist, a metal film, or a laminated film of a photoresist and a metal film is used as an etching mask, and wet etching using hydrofluoric acid or the like is used for etching. The solder ball B is lead-free and formed in a spherical shape by a known method. Note that other metal balls such as lead-containing solder and gold can also be used.

図2を参照して、2は、本発明のバンプ形成方法の実施に使用される一例のリフロー炉である。リフロー炉2は、真空雰囲気または不活性ガス雰囲気を形成し得る密閉容器である。リフロー炉2内には、赤外線ランプや電熱ヒータ等の加熱手段21が設けられ、リフロー炉2内を所定温度に加熱保持できる。また、リフロー炉2内の底部には、公知の構造を有するX−Yステージ22が設けられている。X−Yステージ22上には筒状の支持部材23が設置され、この支持部材23の上面に上記冶具1の下面外周縁部を載置することで冶具1が保持される。X−Yステージ22は、その中心を回転中心として周方向(θ方向)に回転できるように構成してもよい。   Referring to FIG. 2, reference numeral 2 denotes an example of a reflow furnace used for carrying out the bump forming method of the present invention. The reflow furnace 2 is a sealed container that can form a vacuum atmosphere or an inert gas atmosphere. Heating means 21 such as an infrared lamp or an electric heater is provided in the reflow furnace 2 so that the inside of the reflow furnace 2 can be heated and held at a predetermined temperature. Further, an XY stage 22 having a known structure is provided at the bottom in the reflow furnace 2. A cylindrical support member 23 is installed on the XY stage 22, and the jig 1 is held by placing the lower peripheral edge of the lower surface of the jig 1 on the upper surface of the support member 23. The XY stage 22 may be configured to be able to rotate in the circumferential direction (θ direction) with its center as the rotation center.

X−Yステージ22上面には、支持部材23の内側に位置させて例えばCCDカメラ等の撮像手段3が設けられている。ここで、本実施形態では、冶具1として硼珪酸ガラス板、即ち、透明な材料からなるものを用いているため、冶具1越しにウエハWを撮像したり、各窪み部11に搭載した導電性ボールを撮像できる。これにより、冶具1に対するウエハWのアライメントや各窪み部11に導電性ボールBが確実に搭載されているかの確認を行う場合に有利である。また、リフロー炉内には、支持部材23に対向させて、冶具1及びウエハWの上面外周縁部を下方に押圧するリング状の押圧部材24が設けられている。この押圧部材24には、図外のエアーシリンダやモータ等の駆動源の駆動軸25が連結され、リフロー炉2内で上下動する。   On the upper surface of the XY stage 22, an image pickup unit 3 such as a CCD camera is provided inside the support member 23. Here, in the present embodiment, since the jig 1 is made of a borosilicate glass plate, that is, made of a transparent material, the wafer W is imaged through the jig 1 or the conductive material mounted in each of the depressions 11. The ball can be imaged. This is advantageous when the alignment of the wafer W with respect to the jig 1 and the confirmation of whether or not the conductive ball B is securely mounted in each recess 11. In the reflow furnace, a ring-shaped pressing member 24 that presses the outer peripheral edge of the jig 1 and the wafer W downward is provided so as to face the support member 23. A driving shaft 25 of a driving source such as an air cylinder or a motor (not shown) is connected to the pressing member 24 and moves up and down in the reflow furnace 2.

次に、半田バンプの形成手順を図1〜図3を用いて説明する。先ず、リフロー炉2内の支持部材23上に、その下面外周縁部で支持されるように上記冶具1を位置決め載置する(図2に示す状態)。このとき、押圧部材24は、冶具1から離間した上方位置にある。冶具1が載置されると、冶具1の各窪み部11にはんだボールBを搭載する。この場合、冶具1上面に複数のはんだボールBを載せ、ブラシ等によりはんだボールBを分散させて各窪み部11にはんだボールBを夫々落とし込んでいく。   Next, a procedure for forming solder bumps will be described with reference to FIGS. First, the jig 1 is positioned and placed on the support member 23 in the reflow furnace 2 so as to be supported by the outer peripheral edge of the lower surface (state shown in FIG. 2). At this time, the pressing member 24 is in an upper position separated from the jig 1. When the jig 1 is placed, the solder balls B are mounted on the respective recessed portions 11 of the jig 1. In this case, a plurality of solder balls B are placed on the upper surface of the jig 1, the solder balls B are dispersed with a brush or the like, and the solder balls B are dropped into the respective recessed portions 11.

なお、窪み部11が半球状に形成されているため、各窪み部11内にはんだボールBを落とし込むと、窪み部11内の所定位置に各はんだボールBが位置決めされる。そして、撮像手段3により冶具1を撮像し、公知の方法で画像処理して、全ての窪み部11に1個のはんだボールBが搭載されているかを確認する。なお、撮像手段3により、各窪み部11に複数のはんだボールBが搭載されていたり、いずれかの窪み部11にはんだボールBが搭載されていない場合には、余分なはんだボールBを除去したり、搭載されていない窪み部11内にはんだボールBを搭載する。   In addition, since the hollow part 11 is formed in the hemispherical shape, when the solder ball B is dropped into each hollow part 11, each solder ball B is positioned at a predetermined position in the hollow part 11. Then, the jig 1 is imaged by the imaging means 3 and image processing is performed by a known method to check whether one solder ball B is mounted in all the recessed portions 11. Note that when the plurality of solder balls B are mounted in each recess 11 or no solder ball B is mounted in any of the recesses 11, the excess solder balls B are removed by the imaging unit 3. Alternatively, the solder ball B is mounted in the recess 11 that is not mounted.

はんだボールBが各窪み部11に搭載されると、公知の構造を有する搬送ロボットにより、ウエハWを冶具1の上方位置に移送する。このとき、搬送ロボットは、電極パッドPが下方になるようにウエハWを保持する。そして、撮像手段3により冶具1及びこの冶具1越しにウエハWを撮像し、公知の方法で画像処理して、各窪み部に搭載されたはんだボールBの直上に、ウエハWの各電極パッドPが位置しているかを確認する(図3(a)参照)。なお、はんだボールBと電極パッドPとの上下方向の位置関係にずれがある場合には、上記画像処理結果から補正量を算出し、これに応じてX−Yステージを移動させ、アライメント(位置合わせ)が行なわれる(図3(b)参照)。   When the solder ball B is mounted in each recess 11, the wafer W is transferred to an upper position of the jig 1 by a transfer robot having a known structure. At this time, the transfer robot holds the wafer W so that the electrode pad P faces downward. Then, the imaging means 3 images the jig 1 and the wafer W through the jig 1, performs image processing by a known method, and each electrode pad P of the wafer W is directly above the solder ball B mounted in each depression. Is confirmed (see FIG. 3A). If there is a deviation in the vertical positional relationship between the solder ball B and the electrode pad P, the correction amount is calculated from the image processing result, and the XY stage is moved in accordance with this, and the alignment (position (See FIG. 3B).

冶具1に対するウエハWのアライメントが終了すると、搬送ロボットにより、冶具1とウエハの上下方向の位置関係を保ったまま、冶具1上にウエハWを載置する。これにより、各はんだボールBを各電極パッドPに密着させる(図3(c)参照)。そして、押圧部材24を下動させ、ウエハWと冶具1とを支持部材23の上面に向かって押圧することで両者を固定する。この状態で、加熱手段21を作動させてリフロー炉2内を、使用するはんだ材料に合わせた接合温度まで加熱する(例えば、Sn−3Ag−0.5Cuの場合、225℃)。これにより、はんだボールBが加熱溶融されて電極パッドPに転写され、電極パッドP上に半田バンプが形成される(図3(d)参照)。このとき、冶具1が、はんだボールBの溶解時に濡れない硼珪酸ガラス板で構成されているため、はんだボールBが確実に電極パッドPに転写され、その上、はんだバンプを形成したときの体積も変化しない。なお、ウエハWの加熱に先立っては、リフロー内に真空雰囲気または不活性ガス雰囲気を形成するようにしてもよい。最後に、はんだバンプが形成されたウエハWは、押圧手段24による押圧が開放された後、搬送ロボットによりリフロー炉2から取り出される。   When the alignment of the wafer W with respect to the jig 1 is completed, the wafer W is placed on the jig 1 while the positional relationship in the vertical direction between the jig 1 and the wafer is maintained by the transfer robot. Thereby, each solder ball B is brought into close contact with each electrode pad P (see FIG. 3C). Then, the pressing member 24 is moved downward, and the wafer W and the jig 1 are pressed toward the upper surface of the support member 23 to fix them. In this state, the heating means 21 is operated to heat the inside of the reflow furnace 2 to a joining temperature that matches the solder material used (for example, in the case of Sn-3Ag-0.5Cu, 225 ° C.). As a result, the solder balls B are heated and melted and transferred to the electrode pads P, and solder bumps are formed on the electrode pads P (see FIG. 3D). At this time, since the jig 1 is composed of a borosilicate glass plate that does not get wet when the solder balls B melt, the volume when the solder balls B are reliably transferred to the electrode pads P and solder bumps are formed. Will not change. Prior to heating the wafer W, a vacuum atmosphere or an inert gas atmosphere may be formed in the reflow. Finally, the wafer W on which the solder bumps are formed is taken out from the reflow furnace 2 by the transfer robot after the pressing by the pressing means 24 is released.

本実施形態によれば、仮着用のフラックスは不要となる。このため、はんだバンプ形成時にフラックスを塗布する工程やはんだボールの加熱溶解後に残るフラックス残渣の洗浄工程が不要となり、製造工程を少なくしてバンプ形成の更なる低コスト化を図ることができる。その上、バンプ形成後に電極パッドが腐食する等の不具合も生じない。   According to this embodiment, the temporary wearing flux is not necessary. This eliminates the need for a flux application process at the time of solder bump formation and a flux residue cleaning process remaining after the solder balls are heated and melted, thereby reducing the number of manufacturing processes and further reducing the cost of bump formation. In addition, there is no problem such as corrosion of the electrode pad after bump formation.

また、上記実施形態では、冶具1を、金属製のものとは異なり、ウエハWと線熱膨張係数が近似する硼珪酸ガラス板製としたため、リフロー炉2内にてはんだボールBを溶解させるためにその内部を加熱することで、冶具1及びウエハWも加熱され、冶具1及びウエハWが夫々熱膨張しても、各電極パッドPに密着させた各はんだボールBが、電極パッドのない部分まで位置ずれを起こすことが防止できる。このとき、冶具1の各窪み部11を、その内周面の曲率がはんだボールBの曲率より小さく設定した半球状としているため、冶具1やウエハWとの間で熱膨張量に差が生じたとき、はんだボールBが窪み部11内を追従して転動することで、電極パッドPとの密着状態が確実に保持され、電極パッドPに転写される。   In the above embodiment, since the jig 1 is made of a borosilicate glass plate having a linear thermal expansion coefficient approximate to that of the wafer W, unlike the metal one, the solder ball B is melted in the reflow furnace 2. The jig 1 and the wafer W are also heated by heating the inside thereof, and even if the jig 1 and the wafer W are thermally expanded, the solder balls B brought into close contact with the electrode pads P are portions where no electrode pads are present. It is possible to prevent the positional deviation from occurring. At this time, each recess 11 of the jig 1 has a hemispherical shape in which the curvature of the inner peripheral surface is set to be smaller than the curvature of the solder ball B, so that a difference in thermal expansion amount occurs between the jig 1 and the wafer W. In this case, the solder ball B rolls following the inside of the recessed portion 11 so that the contact state with the electrode pad P is reliably maintained and transferred to the electrode pad P.

以上、本実施形態のバンプ形成方法について説明したが、本発明は上記に限定されるものではい。上記実施形態では、窪み部11を、半球状で且つ導電性ボールBを配置したときにその外周面が冶具1上面が上側に突出するように設定したものについて説明したが、窪み部11内に導電性ボールBを収容できるものであれば、窪み部11の形状やその深さは特に制限されるものではい。   Although the bump forming method of the present embodiment has been described above, the present invention is not limited to the above. In the said embodiment, although the hollow part 11 was hemispherical and when the conductive ball B was arrange | positioned, what was set so that the outer peripheral surface might protrude the jig 1 upper surface upward, in the hollow part 11 was demonstrated. As long as the conductive ball B can be accommodated, the shape and depth of the recess 11 are not particularly limited.

図4(a)に示すように、窪み部11a内に導電性ボールBを搭載したとき、この導電性ボールBの外周面が冶具10a表面から突出しないようにしたものでもよい。このような場合には、はんだボールBが搭載された各窪み部11aとウエハWの各電極パッドPとを上下方向で位置合わせして配置した後、冶具10aとウエハWを固定し(図4(b)参照)、そして、これら冶具10aとウエハWを一緒に上下反転させる。これにより、電極パッド上に導電性ボールBが落下して相互に密着する(図4(c)参照)。この状態で導電性ボールを加熱溶解させて電極パッド上に転写させればよい(図4(d)参照)。   As shown in FIG. 4A, when the conductive ball B is mounted in the recess 11a, the outer peripheral surface of the conductive ball B may be prevented from protruding from the surface of the jig 10a. In such a case, the jigs 10a and the wafer W are fixed after the depressions 11a on which the solder balls B are mounted and the electrode pads P of the wafer W are aligned in the vertical direction (FIG. 4). Then, the jig 10a and the wafer W are turned upside down together. As a result, the conductive balls B fall on the electrode pads and adhere to each other (see FIG. 4C). In this state, the conductive ball may be heated and dissolved and transferred onto the electrode pad (see FIG. 4D).

また、上記実施形態においては、冶具1の材質として硼珪酸ガラスを用いたものを例に説明したが、これに限定されるものではなく、例えばシリコン製としてもよい。この場合、ウエハWと共に加熱されて熱膨張したとき、窪み部11に搭載されたはんだボールBと、対応する電極パッドPとの密着状態が保持されるものであれば、線熱膨張係数に差があってもよく、また、基板がウエハW以外であるときには、それに応じて冶具1の材質が適宜選択される。   Moreover, in the said embodiment, although what used the borosilicate glass as a material of the jig 1 was demonstrated to the example, it is not limited to this, For example, it is good also as a product made from a silicon | silicone. In this case, if the solder ball B mounted in the recess 11 and the corresponding electrode pad P are kept in close contact with each other when heated together with the wafer W and thermally expanded, there is a difference in linear thermal expansion coefficient. In addition, when the substrate is other than the wafer W, the material of the jig 1 is appropriately selected accordingly.

更に、上記実施形態においては、冶具1として、窪み部11、11bを設けたものを例に説明したが、冶具10bとして、ウエハW上の電極パッドPに夫々対応させた貫通孔12を設けたものとすることができる(図5(a)参照)。この冶具10bは、上記実施形態と同様、ウエハWと同等の線熱膨張係数を有する硼珪酸ガラス製である。そして、各貫通孔12が各電極パッドPを臨むように位置合わせしてウエハW上に配置し(図5(b)参照)、上記同様の方法で、貫通孔12の夫々にはんだボールBを落とし込んで各電極パッドPに当接させる(図5(c)参照)。この状態で、はんだボールBを加熱溶融させると、各電極パッドPにバンプが形成される(図5(d)参照)。   Furthermore, in the said embodiment, although what provided the hollow parts 11 and 11b was demonstrated as an example as the jig 1, the through-hole 12 corresponding to each electrode pad P on the wafer W was provided as the jig 10b. (See FIG. 5A). This jig 10b is made of borosilicate glass having a linear thermal expansion coefficient equivalent to that of the wafer W, as in the above embodiment. Then, the respective through holes 12 are positioned so as to face the respective electrode pads P and arranged on the wafer W (see FIG. 5B), and the solder balls B are respectively applied to the through holes 12 by the same method as described above. It is dropped and brought into contact with each electrode pad P (see FIG. 5C). In this state, when the solder balls B are heated and melted, bumps are formed on the electrode pads P (see FIG. 5D).

また、上記実施形態においては、リフロー炉2を用いたものを例に説明したが、導電性ボールを加熱融解できるものであれば特に制限はなく、例えば、ステージにヒータを内蔵して導電性ボールを加熱溶解させるようにしてもよい。上記実施形態においては、一枚のウエハWにバンプを形成する場合を例に説明したが、リフロー炉以外の場所でウエハWと、はんだボールBを搭載した冶具1とを予めアライメントして固定し、固定したものの複数個をリフロー炉に収納して同時処理することもできる。   In the above embodiment, the example using the reflow furnace 2 has been described as an example. However, there is no particular limitation as long as the conductive ball can be heated and melted. May be dissolved by heating. In the above embodiment, the case where bumps are formed on one wafer W has been described as an example. However, the wafer W and the jig 1 on which the solder balls B are mounted are aligned and fixed in advance in a place other than the reflow furnace. A plurality of fixed ones can be stored in a reflow furnace and processed simultaneously.

1…冶具、11…窪み部、B…はんだボール(導電性ボール)、P…電極パッド、W…ウエハ(基板)。   DESCRIPTION OF SYMBOLS 1 ... Jig, 11 ... Recessed part, B ... Solder ball (conductive ball), P ... Electrode pad, W ... Wafer (substrate).

Claims (4)

導電性ボールを用いて、基板の片面に所定のパターンで形成された複数の電極パッドにバンプを夫々形成するバンプ形成方法であって、
前記導電性ボールを夫々収容する複数の窪み部が上記パターンに対応させて形成された冶具を用い、この冶具の窪み部の各々に導電性ボールを夫々搭載する工程と、
前記基板を、前記各窪み部と各電極パッドとを上下方向で位置合わせして前記冶具上に配置する工程と、
前記冶具と前記基板との上下方向の位置関係を保持した状態で、少なくとも各導電性ボールを各電極に密着させ、これら導電性ボールを加熱溶融させてバンプを形成する工程と、を含み、
前記冶具を、基板と同等の線熱膨張係数を有し、且つ、導電性ボールの溶解時に濡れないものから構成したことを特徴とするバンプ形成方法。
A bump forming method for forming bumps on a plurality of electrode pads formed in a predetermined pattern on one side of a substrate using a conductive ball,
Using a jig in which a plurality of depressions respectively accommodating the conductive balls are formed corresponding to the pattern, and mounting the conductive balls in each of the depressions of the jig;
Placing the substrate on the jig by aligning the depressions and the electrode pads in the vertical direction; and
Including maintaining a vertical positional relationship between the jig and the substrate, at least each conductive ball in close contact with each electrode, and heating and melting these conductive balls to form bumps,
A bump forming method, wherein the jig has a linear thermal expansion coefficient equivalent to that of a substrate and does not get wet when the conductive ball is melted.
前記窪み部は半球状であり、その内周面の曲率が導電性ボールの曲率より小さく設定されていることを特徴とする請求項1記載のバンプ形成方法。   The bump forming method according to claim 1, wherein the recess is hemispherical, and a curvature of an inner peripheral surface thereof is set smaller than a curvature of the conductive ball. 導電性ボールを用いて、基板の片面に所定のパターンで形成された複数の電極パッド上にバンプを夫々形成するバンプ形成方法であって、
前記パターンに対応させて複数の貫通孔が形成された冶具を、各貫通孔が各電極パッドを臨むように位置合わせして基板上に配置する工程と、
前記貫通孔の夫々に導電性ボールを落とし込んで各電極に当接させる工程と、
前記冶具と前記基板との上下方向の位置関係を保持した状態で、導電性ボールを加熱溶融させてバンプを形成する工程と、を含み、
前記冶具として、基板と同等の線熱膨張係数を有するものから構成したことを特徴とするバンプ形成方法。
A bump forming method for forming a bump on each of a plurality of electrode pads formed in a predetermined pattern on one side of a substrate using a conductive ball,
A step in which a jig in which a plurality of through holes are formed corresponding to the pattern is positioned on the substrate so that each through hole faces each electrode pad, and
Dropping a conductive ball into each of the through holes and bringing it into contact with each electrode;
A step of heating and melting a conductive ball to form a bump while maintaining a vertical positional relationship between the jig and the substrate, and
A bump forming method comprising the jig having a linear thermal expansion coefficient equivalent to that of a substrate.
請求項1乃至請求項3のいずれか1項に記載のバンプ形成方法であって、基板としてシリコンウエハに回路素子が形成されたものとし、この回路素子の各電極パッドに、鉛フリー半田バンプを形成する場合において、
前記冶具をガラスまたはシリコン製としたことを特徴とするバンプ形成方法。
4. The bump forming method according to claim 1, wherein a circuit element is formed on a silicon wafer as a substrate, and a lead-free solder bump is provided on each electrode pad of the circuit element. When forming,
A bump forming method, wherein the jig is made of glass or silicon.
JP2010187856A 2010-08-25 2010-08-25 Method of forming bump Pending JP2012049207A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082362A (en) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp Method for manufacturing electronic device
CN109633958A (en) * 2019-01-18 2019-04-16 深圳市鼎视普锐科技有限公司 A kind of anticollision LCM liquid crystal display die set

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JPS5124869A (en) * 1974-08-23 1976-02-28 Mitsubishi Electric Corp Handotaisochino totsukidenkyokukeiseiho
JPS52140269A (en) * 1976-05-19 1977-11-22 Hitachi Ltd Formation of solder electrode
JPS52152165A (en) * 1976-06-14 1977-12-17 Hitachi Ltd Formation of solder bump electrode
JPS6225435A (en) * 1985-07-25 1987-02-03 Ikeda Jido Kiki Kk Formation of boding bump
JP2007103817A (en) * 2005-10-07 2007-04-19 Citizen Watch Co Ltd Solder ball array mask and method of manufacturing semiconductor device using same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124869A (en) * 1974-08-23 1976-02-28 Mitsubishi Electric Corp Handotaisochino totsukidenkyokukeiseiho
JPS52140269A (en) * 1976-05-19 1977-11-22 Hitachi Ltd Formation of solder electrode
JPS52152165A (en) * 1976-06-14 1977-12-17 Hitachi Ltd Formation of solder bump electrode
JPS6225435A (en) * 1985-07-25 1987-02-03 Ikeda Jido Kiki Kk Formation of boding bump
JP2007103817A (en) * 2005-10-07 2007-04-19 Citizen Watch Co Ltd Solder ball array mask and method of manufacturing semiconductor device using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082362A (en) * 2012-10-17 2014-05-08 Mitsubishi Electric Corp Method for manufacturing electronic device
CN109633958A (en) * 2019-01-18 2019-04-16 深圳市鼎视普锐科技有限公司 A kind of anticollision LCM liquid crystal display die set

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