JP2012033924A - Exposure apparatus, and method for manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To correct the distortion of a pattern-projected image due to the thermal expansion of reticles.SOLUTION: Illumination light IL via a reticle R is modulated with the use of a spatial light modulator SL disposed on an image pickup plane of a first optical system (by dividing and reflecting with the use of a plurality of mirror elements), and the modulated illumination light IL is radiated upon a wafer W. Then the distortion of a pattern-projected image due to the thermal expansion of the reticle can be corrected by modulating the illumination light IL according to the thermal expansion deformation of the reticle R.

Description

  The present invention relates to an exposure apparatus and a device manufacturing method, and more particularly to an exposure apparatus used in a lithography process for manufacturing an electronic device (microdevice) and a device manufacturing method using the exposure apparatus.

  Conventionally, in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements (integrated circuits, etc.), liquid crystal display elements, etc., a step-and-repeat type projection exposure apparatus (so-called stepper) or a step-and-scan type Projection exposure apparatuses (so-called scanning steppers (also called scanners)) are mainly used.

  As semiconductor devices are highly integrated, the patterns are gradually miniaturized. To cope with the miniaturization of patterns, the exposure wavelength is shortened and the numerical aperture of the projection optical system is increased (high NA). Etc.) have been attempted. For example, the exposure wavelength is shortened to 193 nm of an ArF excimer laser, and the numerical aperture exceeds 1 in the case of a so-called immersion exposure apparatus. However, the demand for higher integration of semiconductor elements does not stop, and along with this, the exposure apparatus is required to further improve the resolution, and now it is finer than the resolution limit of the projection exposure apparatus. It has been demanded that a simple pattern image can be formed on a substrate (wafer). As a possible countermeasure for this, a so-called double patterning method or the like has recently been performed.

  Further, the projection exposure apparatus is required to have high throughput as well as high resolution. For this reason, high-energy illumination light is used, and thermal expansion of the reticle (or mask) or lens elements constituting the projection optical system associated with the use of the exposure apparatus has become a problem.

  Conventionally, as a countermeasure against thermal expansion of the reticle, a method of cooling the reticle, for example, a method of blowing temperature-controlled air (gas) (see, for example, Patent Document 1) has been proposed. Further, as a countermeasure against thermal expansion of the projection optical system (lens elements constituting the projection optical system, etc.), a change in the optical characteristics of the projection optical system is estimated by calculation from the amount of irradiation energy to the projection optical system and the like, It has been practiced to maintain and improve the image formation state of the projected image of the pattern by driving the lens element of the projection optical system (see, for example, Patent Document 2).

  However, in order to correct the change in the imaging state of the projection image of the pattern caused by thermal expansion of the reticle (or mask) that changes over time due to the use of the exposure apparatus or the lens elements constituting the projection optical system, etc. The conventional projection exposure apparatus has a limit.

JP 2010-80855 A US Patent Application Publication No. 2008/0218714

  According to a first aspect of the present invention, there is provided an exposure apparatus that irradiates an energy beam to expose an object and forms a pattern on the object, wherein the pattern disposed on the optical path of the energy beam is formed. A first optical system that irradiates the image plane with the energy beam through the first mask and forms an image of the pattern; and the first mask is disposed on the image plane of the first optical system. A spatial light modulator having a plurality of mirror elements that divide and reflect the energy beam via the light source, a drive system that drives each of the plurality of mirror elements, and the plurality of mirror elements of the spatial light modulator An exposure apparatus comprising: a second optical system that irradiates the object with the energy beam reflected by the optical path and forms an image of the pattern image on the object via the spatial light modulator. The

  According to this, by dividing and reflecting the energy beam by the plurality of mirror elements of the light modulator, it is possible to correct the imaging state of the image of the pattern on the object via the spatial light modulator. It becomes possible.

  According to a second aspect of the present invention, there is provided a device manufacturing method including forming a pattern on the object by the exposure apparatus of the present invention and developing the object on which the pattern is formed. The

It is a figure which shows schematically the structure of the exposure apparatus of one Embodiment. It is a figure which shows the structure of a spatial light modulator roughly. It is a block diagram which shows the main structures of the control system of the exposure apparatus of one Embodiment. FIG. 4A is a diagram showing an example of thermal expansion deformation of the pattern surface of the reticle, and FIG. 4B is a spatial light modulator for correcting distortion of the projection image caused by thermal expansion deformation of the pattern surface of the reticle. FIG. 4C is a diagram showing an example of a reflection image by the spatial light modulator.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 schematically shows a configuration of an exposure apparatus 100 according to an embodiment. The exposure apparatus 100 is a step-and-scan projection exposure apparatus, a so-called scanner. In the following, the horizontal direction in FIG. 1, which is the scanning direction in which the reticle R and the wafer W are relatively scanned, is the Y-axis direction, the orthogonal direction to the orthogonal plane is the X-axis direction, and the X-axis and Y-axis are orthogonal. The direction (vertical direction in the drawing) is defined as the Z-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are defined as the θx, θy, and θz directions, respectively.

  The exposure apparatus 100 uses an illumination system IOP that illuminates the reticle R with the illumination light IL, a reticle stage RST that holds the reticle R and moves in a plane parallel to the XY plane, and a pattern image formed on the reticle R as a sensitive material ( A projection unit PU including a projection optical system PL that projects onto a wafer W coated with a resist), a spatial light modulator SL that modulates illumination light IL through the reticle R inside the projection optical system PL, and a wafer W are held. And a wafer stage WST that moves and a control system thereof. Here, the spatial light modulator is an element that processes, displays, and erases spatial information such as an image or patterned data by controlling the amplitude, phase, or traveling direction of incident light two-dimensionally. means. In this embodiment, as the spatial light modulator SL, a multi-mirror device that is a kind of a reflective spatial light modulator is employed. Therefore, the modulation of the incident light by the spatial light modulator SL mainly means a two-dimensional change (control) in the traveling direction.

  The illumination system IOP includes a light source and illumination optical system, is set (restricted) by a field stop (also referred to as a masking blade or a reticle blind) disposed therein, and is a rectangle (or elongated) in the X-axis direction on the reticle R (or Irradiation light (exposure light) IL is irradiated onto an arcuate illumination area IAR1, and the reticle R on which the circuit pattern is formed is illuminated with uniform illuminance. The configuration of the illumination system IOP is disclosed in, for example, US Patent Application Publication No. 2003/0025890. Here, as an example, ArF excimer laser light (wavelength 193 nm) is used as the illumination light IL.

  Reticle stage RST is arranged below (−Z side) illumination system IOP. On reticle stage RST, reticle R having a circuit pattern or the like formed on its pattern surface (lower surface in FIG. 1) is placed. The reticle R is fixed on the reticle stage RST, for example, by vacuum suction.

  The reticle stage RST can be finely driven in a horizontal plane (XY plane) by a reticle stage drive system 11 (not shown in FIG. 1, see FIG. 3) including a linear motor, for example, and also in a scanning direction (paper surface in FIG. 1). It can be driven in a predetermined stroke range in the Y axis direction which is the inner left / right direction. Position information of the reticle stage RST in the XY plane (including rotation information in the θz direction) is formed on the end face of the reticle stage RST by a reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 14. For example, with a resolution of about 0.25 nm. Measurement information of reticle interferometer 14 is supplied to main controller 120 (not shown in FIG. 1, refer to FIG. 3). Main controller 120 determines the position of reticle stage RST in the Y-axis direction (and the position in the X-axis direction and the rotation in the θz direction) via reticle stage drive system 11 based on measurement information from reticle interferometer 14. Control.

  Projection unit PU is arranged below reticle stage RST (on the −Z side). The projection unit PU includes a housing 40, a plurality of optical elements (lenses, mirrors, etc.) held inside the housing 40, and reflection surfaces of a number of mirror elements of the spatial light modulator SL. Here, the reflective surfaces of the multiple mirror elements of the spatial light modulator SL constitute a single reflective surface (planar, concave, or convex) as a whole. The reflection surface constituted by the reflection surface is called a reflection surface of the spatial light modulator SL.

  The plurality of optical elements irradiate illumination light IL via the reticle R onto the reflection surface of the spatial light modulator SL to form an image of the pattern formed on the reticle R on the reflection surface of the spatial light modulator SL. The illumination light IL from the first imaging optical system PL1 and the reflection surface of the spatial light modulator SL is irradiated onto the wafer W, and the pattern image formed on the reticle R passes through the reflection surface of the spatial light modulator SL. A second imaging optical system PL2 that forms an image on the wafer W is configured. The first imaging optical system PL1 is a refracting optical system with the same magnification or substantially the same magnification (magnification slightly larger than 1). The second imaging optical system PL2 is a reduction system having a projection magnification smaller than 1. In this embodiment, the first imaging optical system PL1, the reflecting surface of the spatial light modulator SL, and the second imaging optical system PL2 as a whole are both telecentric reduction systems (projection magnification is, for example, 1/4 times or 1/5 times) and a projection optical system PL composed of a catadioptric system is formed. In this case, the reflecting surface of the spatial light modulator SL is disposed substantially coincident with the imaging surface of the first imaging optical system PL1, which is an intermediate imaging surface of the projection optical system PL.

  In addition, a pupil plane of the projection optical system PL is provided on a part (upper end) of the second imaging optical system PL2, and a compensation optical system 42 having a variable Z position and surface shape of the reflection surface is provided on the pupil plane. ing.

  For this reason, when the illumination area IAR1 on the reticle R is illuminated by the illumination light IL, the illumination light IL that has passed through the reticle R is irradiated onto the reflection surface of the spatial light modulator SL via the first imaging optical system PL1. In the illumination area IAR2 on the reflecting surface, an equal-magnification image or a minute enlarged image of the pattern of the reticle R is formed. The illumination light IL is reflected by the reflection surface of the spatial light modulator SL, and is irradiated onto the wafer W whose surface is coated with a resist (sensitive agent) via the second imaging optical system PL2 including the compensation optical system 42. A reduced image of a part of the pattern of the reticle R (a circuit pattern in the illumination area IAR1) on the area (hereinafter referred to as an exposure area) IA on the wafer W conjugate to the area IAR1 through the reflection surface of the spatial light modulator SL. ,It is formed.

  Then, by synchronous driving of the reticle stage RST and the wafer stage WST, the reticle R is moved relative to the illumination area IAR1 (illumination light IL) in the scanning direction (Y-axis direction), and at the same time, the exposure area IA (illumination light IL). By moving the wafer W relative to the scanning direction (Y-axis direction), one shot area (partition area) on the wafer W is scanned and exposed, and the pattern of the reticle R is transferred into the shot area. . In FIG. 1, symbol ILL schematically indicates the principal ray of the illumination light IL inside the projection optical system PL.

  An imaging characteristic correction controller 41 (not shown in FIG. 1, refer to FIG. 3) is connected to the compensation optical system. The imaging characteristic correction controller 41 adjusts the formation state of the image projected on the wafer W by changing the Z position and the surface shape of the reflection surface of the compensation optical system 42 that reflects the illumination light IL. Here, the shape (surface position) of the reflection surface of the compensation optical system 42 is measured by, for example, an encoder that measures the driving amount of an actuator (not shown) that changes the surface position, or a sensor that measures the shape of the reflection surface. The measurement result is transmitted to the imaging characteristic correction controller 41. The imaging characteristic correction controller 41 controls the adaptive optical system 42 in accordance with an instruction from the main control device 120 regarding correction of the distortion of the projected image. In the present embodiment, the imaging characteristic correction controller 41 and the compensation optical system 42 adjust the formation state of the image projected on the wafer W or maintain it satisfactorily, so that the optical characteristics of the projection optical system PL, for example, An imaging characteristic correction device that adjusts various aberrations (imaging characteristics) such as spherical aberration (aberration at the imaging position), coma aberration (aberration at magnification), astigmatism, curvature of field, distortion (distortion), etc. It is configured. The imaging characteristic correction apparatus may include a configuration in which some lens elements are slightly driven in the Z-axis direction (direction parallel to the optical axis AXp) and tilted with respect to the XY plane by an actuator such as a piezo element. Of course, in this case, the actuator may be controlled by the imaging characteristic correction controller 41.

  FIG. 2 shows a schematic configuration of the spatial light modulator SL and peripheral devices. In the spatial light modulator SL, a movable multi-mirror array having a large number of minute mirror elements SE arranged on a two-dimensional (XY) plane is used. In FIG. 2, only the mirror elements SEa, SEb, SEc, and SEd among the many mirror elements are shown. The spatial light modulator SL, for example, continuously tilts (rotates) a large number of mirror elements SE and the large number of mirror elements SE within a predetermined range around two orthogonal axes (for example, the X axis and the Y axis) in the XY plane. And the same number of driving units (not shown). The drive unit includes, for example, a support (not shown) that supports the center of the back surface (the −Z side surface) of the mirror element SE, a substrate (not shown) on which the support is fixed, and four electrodes (not shown) provided on the substrate. (Shown) The four electrodes (not shown) provided on the back surface of the mirror element SE are opposed to the four electrodes. The detailed configuration of the spatial light modulator SL is disclosed in, for example, US Patent Application Publication No. 2009/0097094.

  The spatial light modulator SL is arranged substantially along the intermediate image plane of the projection optical system PL with the reflection surface of the mirror element SE directed in the + Z direction. Illumination light IL via the reticle R is irradiated onto the reflection surface of the mirror element SE via the first imaging optical system PL1. For example, as shown in FIG. 2, the four light beams L1 to L4 in the illumination light IL are emitted in parallel to each other from the emission end of the first imaging optical system PL1 toward the spatial light modulator SL. The light enters the reflecting surfaces of the mirror elements SEa, SEb, SEc, and SEd arranged in the Y-axis direction among the plurality of mirror elements SE. Here, since the mirror elements SEa, SEb, SEc, and SEd are independently tilted by the respective drive units (not shown), the light beams L1 to L4 are reflected in different directions. That is, incident light (illumination light IL) is modulated in this way by the spatial light modulator SL. By this modulation, for example, the light intensity distributions SP1 to SP4 on the plane LP conjugate with the pupil plane of the projection optical system PL are shifted from the distribution without light modulation indicated by the broken line to the distribution indicated by the solid line. That is, the spatial light modulator SL functions as a kind of compensation optical system (imaging characteristic correction optical system). Spatial light modulator SL is controlled by main controller 120 (see FIG. 3).

  Returning to FIG. 1, wafer stage WST is driven on stage base 22 with a predetermined stroke in the X-axis direction and Y-axis direction by stage drive system 24 (not shown in FIG. 1, see FIG. 3) including a linear motor and the like. At the same time, it is finely driven in the Z-axis direction, θx direction, θy direction, and θz direction. On wafer stage WST, wafer W is held, for example, by vacuum suction or the like via a wafer holder (not shown). Wafer stage WST is not limited to a single 6-degree-of-freedom drive stage, and may be configured by a plurality of stages that can drive wafer W with 6 degrees of freedom by combining the drive directions of the respective stages.

  Position information of wafer stage WST in the XY plane (including rotation information (yaw amount (rotation amount θz in θz direction), pitching amount (rotation amount θx in θx direction), rolling amount (rotation amount θy in θy direction))) Is resolved by a laser interferometer system (hereinafter abbreviated as “interferometer system”) 18 via a movable mirror 16 (or a reflection surface formed on the end face of wafer stage WST), for example, about 0.25 nm. Always detected. Measurement information of the interferometer system 18 is supplied to the main controller 120 (see FIG. 3). Main controller 120 controls the position (including rotation in the θz direction) of wafer stage WST in the XY plane via stage drive system 24 based on measurement information from interferometer system 18.

  Further, the position and inclination of the surface of the wafer W in the Z-axis direction are determined by, for example, a focus sensor AF (see FIG. 5) comprising an oblique incidence type multi-point focus position detection system disclosed in US Pat. No. 5,448,332. 1 (not shown, see FIG. 3). Measurement information of the focus sensor AF is also supplied to the main controller 120 (see FIG. 3).

  On the side surface of the second imaging optical system PL2 of the projection unit PU, a wafer alignment system (hereinafter referred to as an alignment system) AS that detects an alignment mark or the like formed on the wafer W is provided. As an example of the alignment system AS, an FIA (Field Image Alignment) system, which is a kind of image processing type imaging alignment sensor, is used.

  In exposure apparatus 100, a pair of TTR (Through The Reticle) alignment systems using light having an exposure wavelength disclosed in, for example, US Pat. No. 5,646,413, for example, above reticle stage RST. A reticle alignment system 13 (not shown in FIG. 1, see FIG. 3) is provided. The detection signal of the reticle alignment system 13 is supplied to the main controller 120 (see FIG. 3).

  FIG. 3 is a block diagram showing the input / output relationship of the main controller 120 that mainly constitutes the control system of the exposure apparatus 100 of the present embodiment. The main controller 120 includes a so-called microcomputer (or workstation) comprising a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), etc., and controls the entire apparatus. Control.

  Next, the operation of the exposure apparatus 100 of the present embodiment configured as described above will be briefly described.

  Prior to exposure, reticle R is loaded onto reticle stage RST by a reticle loader (not shown). Further, a wafer W on which a sensitive layer (resist layer) is formed by a coater / developer (not shown) provided in the exposure apparatus 100 is transferred to a wafer holder (not shown) of wafer stage WST by a wafer loader (not shown). Loaded on top.

  Thereafter, like the normal scanner, the main controller 120 uses the pair of reticle alignment systems 13, a reference mark plate (not shown) on the wafer stage WST, the alignment system AS, and the like to perform the reticle alignment and alignment system AS. Baseline measurement is performed. Subsequent to these preparation operations, the main controller 120 executes wafer alignment (alignment measurement) such as so-called multi-shot EGA within a shot.

  The reticle alignment and the baseline measurement of the alignment system AS are disclosed in detail in, for example, US Pat. No. 5,646,413, and the subsequent in-shot multipoint EGA is disclosed in, for example, US Pat. , 876,946 and the like.

  Based on the in-shot multipoint EGA, an array coordinate of shot areas on the wafer and a deformation amount (magnification, rotation, orthogonality) including the magnification of each shot area are obtained.

  Therefore, main controller 120 deforms the shape of the reflecting surface of compensation optical system 42 of projection optical system PL via imaging characteristic correction controller 41, and drives the lens element as necessary.

  Main controller 120 determines wafer stage WST as a wafer based on the alignment coordinates of the shot area on wafer W obtained by alignment measurement (multi-point EGA in a shot) and the baseline of alignment system AS previously measured. Stepping operation for moving to the scanning start position of each shot area on W and scanning exposure operation for synchronously moving reticle stage RST and wafer stage WST at a speed ratio according to the projection magnification of projection optical system PL are repeated, The image of the pattern of the reticle R is transferred to all shot areas on the wafer W.

  Here, by repeating the exposure process, the reticle R absorbs the illumination light IL and tries to thermally expand isotropically. However, both end portions of the reticle R in the X-axis direction are attracted and held by the reticle stage RST. As a result, the pattern region RP of the reticle R is deformed into a shape as shown in FIG. 4A, for example.

  Therefore, in order to reduce the influence of the deformation of the pattern region RP, the main controller 120 deforms the reflection surface RP ′ of the spatial light modulator SL as schematically shown in FIG. FIG. 4B shows a saddle-shaped reflecting surface RP ′ having a convex XZ section and a concave YZ section. That is, in FIG. 4B, this saddle-shaped reflecting surface has a concave central portion in the Y-axis direction at both ends in the X-axis direction and a central portion in the X-axis direction at both ends in the Y-axis direction in a plan view. It is schematically shown using a rectangular shape deformed as described above. When the image light beam of the projection image IM1 (illumination light IL via the reticle R) enters the reflection surface RP ′, the reflection angle of the reflected light is set in the Y-axis direction as shown in FIG. 4C, for example. The reflection image IM2 is generated by narrowing and expanding in the X-axis direction.

  Therefore, when an image of the pattern region RP having a shape as shown in FIG. 4A is formed on the reflection surface RP ′ of the spatial light modulator SL, the reflection image on the reflection surface RP ′ is It becomes almost rectangular. Accordingly, by projecting this reflected image through the second imaging optical system PL2, a reduced image of the pattern region RP without distortion is formed on the wafer W. That is, by using the spatial light modulator SL, it is possible to correct the distortion of the projection image of the pattern caused by the thermal expansion deformation of the reticle R.

  In addition, when only a part of the pattern area RP of the reticle R undergoes a large thermal expansion deformation as compared with the other parts, the main controller 120 efficiently corrects the distortion of the pattern projection image caused by the deformation. As can be seen, only some of the mirror elements of the spatial light modulator SL can be driven.

  Further, when the exposure process is repeated for a plurality of wafers, main controller 120 appropriately measures the distortion of the projected image using an aerial image measuring device (not shown) or the like at predetermined intervals. Based on the above, the imaging characteristics of the projection optical system PL are corrected via the imaging characteristics correction controller 41, and the shape of the reflection surface RP ′ to be reproduced using the mirror element SE of the spatial light modulator SL is determined. It is also good. As a result, it is possible to reduce the deterioration of the imaging characteristics due to the thermal expansion of the reticle R and the thermal expansion of the lens element.

  As described above, according to the exposure apparatus 100 of the present embodiment, the illumination light IL passing through the reticle R is modulated by the spatial light modulator SL (divided and reflected by using a plurality of mirror elements SE). The image formation state of the image of the pattern on the reticle R on the object via the spatial light modulator can be corrected. In particular, main controller 120 can change the shape of the reflecting surface of spatial light modulator SL (adjust the inclination of the plurality of mirror elements SE) in accordance with the thermal expansion deformation of reticle R. Thereby, the illumination light IL is modulated by the spatial light modulator SL after the adjustment, and the distortion of the projection image caused by the thermal expansion deformation of the reticle R can be corrected.

  In the above embodiment, the case where the spatial light modulator SL is arranged in a part of the projection optical system PL has been described. However, the present invention is not limited to this, and the spatial light modulator SL is arranged inside the illumination system IOP. May be.

  Moreover, in the exposure apparatus 100 of the said embodiment, although one spatial light modulation unit (spatial light modulator) was used, it is not restricted to this, A several spatial light modulation unit (spatial light modulator) is used. Is also possible. As an illumination optical system for an exposure apparatus using a plurality of spatial light modulation units, for example, an illumination optical system disclosed in US Patent Application Publication No. 2009/0109417 and US Patent Application Publication No. 2009/0128886 is used. Can be adopted.

  In addition, in the exposure apparatus 100 of the above embodiment, a spatial light modulator that independently controls the inclination of the mirror elements arranged two-dimensionally is employed. As such a spatial light modulator, for example, European patent application publication is made. Spatial light modulators disclosed in US Pat. No. 779530, US Pat. No. 6,900,915 and US Pat. No. 7,095,546 can be employed.

  It is also possible to employ a spatial light modulator that independently controls the height of the mirror element as the spatial light modulator. As such a spatial light modulator, for example, the spatial light modulator disclosed in US Pat. No. 5,312,513 and US Pat. No. 6,885,493 can be employed. Furthermore, the above-described spatial light modulator can be modified in accordance with the disclosure of, for example, US Pat. No. 6,891,655 or US Patent Application Publication No. 2005/0095749.

  In the above embodiment, the case where the position of the reticle stage RST is measured by the reticle interferometer 14 and the position of the wafer stage WST is measured by the interferometer system 18 is illustrated. However, the present invention is not limited to this, and an encoder (an encoder system including a plurality of encoders) may be used instead of or together with the reticle interferometer 14. Similarly, an encoder (an encoder system composed of a plurality of encoders) may be used instead of or together with the interferometer system 18.

  In the above-described embodiment, the case where the exposure apparatus is a dry type that exposes the wafer W without using liquid (water) has been described. However, the present invention is not limited to this. For example, International Publication No. 99/49504, Europe As disclosed in Patent Application Publication No. 1,420,298, International Publication No. 2004/055803, U.S. Patent No. 6,952,253, etc., between the projection optical system and the wafer. The above-described embodiment can also be applied to an exposure apparatus that forms an immersion space including an optical path of illumination light and exposes the wafer with illumination light through the projection optical system and the liquid in the immersion space. Further, the above embodiment can be applied to an immersion exposure apparatus disclosed in, for example, US Patent Application Publication No. 2008/0088843.

  In the above-described embodiment, the case where the exposure apparatus is a scanning exposure apparatus such as a step-and-scan method has been described. However, the present invention is not limited thereto, and the above-described embodiment is applied to a stationary exposure apparatus such as a stepper. Also good. In addition, as disclosed in, for example, US Pat. No. 6,590,634, US Pat. No. 5,969,441, US Pat. No. 6,208,407, a plurality of wafers. The above-described embodiment can also be applied to a multi-stage type exposure apparatus including a stage. Further, as disclosed in, for example, International Publication No. 2005/0774014, an exposure apparatus provided with a measurement stage including a measurement member (for example, a reference mark and / or a sensor) separately from the wafer stage is also described above. The embodiment can be applied.

The light source is not limited to the ArF excimer laser, and pulses such as a KrF excimer laser (output wavelength 248 nm), F ₂ laser (output wavelength 157 nm), Ar ₂ laser (output wavelength 126 nm), Kr ₂ laser (output wavelength 146 nm), etc. It is also possible to use a laser light source, an ultrahigh pressure mercury lamp that emits bright lines such as g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. A harmonic generator of a YAG laser or the like can also be used. In addition, as disclosed in, for example, US Pat. No. 7,023,610, a single wavelength laser beam in an infrared region or a visible region oscillated from a DFB semiconductor laser or a fiber laser is used as vacuum ultraviolet light. For example, a harmonic that is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, two reticle patterns are synthesized on a wafer via a projection optical system, and 1 on the wafer by one scan exposure. The above embodiment can also be applied to an exposure apparatus that performs double exposure of two shot areas almost simultaneously.

  In the above embodiment, the object on which the pattern is to be formed (the object to be exposed to which the energy beam is irradiated) is not limited to the wafer, but may be another object such as a glass plate, a ceramic substrate, a film member, or a mask blank. good.

  The use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, but for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, an organic EL, a thin film magnetic head, an image sensor (CCD, etc.), micromachines, DNA chips and the like can also be widely applied to exposure apparatuses. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The above embodiment can also be applied to an exposure apparatus that transfers a circuit pattern.

  An electronic device such as a semiconductor element includes a step of designing a function / performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and the exposure apparatus (pattern forming apparatus) of the above-described embodiment. And a lithography step for transferring the mask (reticle) pattern to the wafer by the exposure method, a development step for developing the exposed wafer, and an etching step for removing the exposed member other than the portion where the resist remains by etching, It is manufactured through a resist removal step for removing a resist that has become unnecessary after etching, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like. In this case, in the lithography step, the exposure method described above is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the wafer. Therefore, a highly integrated device can be manufactured with high productivity.

  The exposure apparatus of the present invention is suitable for forming a pattern on an object. The device manufacturing method of the present invention is suitable for manufacturing micro devices.

  DESCRIPTION OF SYMBOLS 11 ... Reticle stage drive system, 14 ... Reticle interferometer, 24 ... Stage drive system, 42 ... Compensation optical system, 100 ... Exposure apparatus, 120 ... Main controller, IOP ... Illumination system, PL ... Projection optical system, PU ... Projection Unit, R ... reticle, RST ... reticle stage, SL ... spatial light modulator, W ... wafer, WST ... wafer stage.

Claims (6)

An exposure apparatus that irradiates an energy beam to expose an object and forms a pattern on the object,
A first optical system that irradiates an imaging surface with the energy beam through a first mask on which a pattern disposed on the optical path of the energy beam is formed, and forms an image of the pattern;
A plurality of mirror elements disposed on the image plane of the first optical system and configured to divide and reflect the energy beam via the first mask; and a drive system that drives each of the plurality of mirror elements. A spatial light modulator having,
A second optical unit configured to irradiate the object with the energy beam reflected by the plurality of mirror elements of the spatial light modulator and to form an image of the pattern image on the object through the spatial light modulator; An exposure apparatus comprising: a system;   The exposure apparatus according to claim 1, further comprising a control device that controls the drive system to adjust the inclination of each of the plurality of mirror elements. The first optical system and the second optical system constitute a projection optical system that projects the pattern of the first mask onto the object,
The first optical system has a projection magnification of 1 or slightly larger than 1,
The exposure apparatus according to claim 1, wherein the second optical system has a projection magnification smaller than 1. 4.   The exposure apparatus according to claim 1, wherein the projection optical system has a compensation optical system on a pupil plane thereof.   The exposure apparatus according to claim 1, further comprising a moving member that moves while holding the first mask. Forming a pattern on the object by the exposure apparatus according to claim 1;
Developing the object on which a pattern has been formed.

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