JP2012015452A - Semiconductor light-emitting element device, image exposure device, image forming device, and image display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element device capable of easily and selectively etching wiring from a semiconductor thin film light-emitting element to a substrate or from the semiconductor thin film light-emitting element to a driving element on the substrate, an image exposure device including the semiconductor light-emitting element device, an electrophotographic image forming device including the image exposure device, and an image display device including the semiconductor light-emitting element device.SOLUTION: A semiconductor light-emitting element device comprises: an integrated substrate 101 including electrode wiring 112 and 113; a semiconductor thin film light-emitting element 102 provided on the integrated substrate 101; electrode pads 108 and 109 that are provided on the semiconductor thin film light-emitting element 102 and are electrically connected to the semiconductor thin film light-emitting element 102; and removable connection wiring 111a and 111b electrically connecting the electrode pads 108 and 109 and the electrode wiring 112 and 113. The removable connection wiring 111a and 111b are composed of a material capable of selectively etching by chemical etching.

Description

  The present invention relates to a semiconductor light emitting element device having a semiconductor thin film light emitting element, an image exposure apparatus including the semiconductor light emitting element apparatus, an image forming apparatus including the image exposure apparatus, and an image display apparatus including the semiconductor light emitting element apparatus. It is about.

  Generally, when a semiconductor light emitting device is integrated on a substrate, a semiconductor light emitting device chip (for example, 250 to 300 μm thick) formed by dicing or cleaving is fixed on the substrate using a die bonding paste or an adhesive. The connection pads of the semiconductor light emitting element chip and the electrical wiring on the substrate are connected using Au bonding wires. There is also known a technique in which a semiconductor light emitting element chip and a drive circuit chip are bonded on a substrate and the two chips are connected using an Au bonding wire. However, in these methods, since the semiconductor light emitting element chip is manufactured by dicing or cleaving, it is difficult to sufficiently shrink the chip size. In addition, the semiconductor light emitting element chip and the drive circuit chip need to be provided with connection pads (for example, 50 μm × 50 μm or more) for connecting Au bonding wires. From this point, it is difficult to shrink the chip sufficiently. there were.

  Therefore, an LED epitaxial film (for example, 5 μm or less) which is a semiconductor thin film light emitting element is closely fixed on the substrate, and the semiconductor is formed from the semiconductor thin film light emitting element to the substrate or from the semiconductor thin film light emitting element to the substrate through the substrate. There is a proposal that the electrical wiring up to the light emitting element driving element is a thin film wiring formed by combining a photolithography technique and a vapor deposition method or a sputtering method (see, for example, Patent Document 1). According to this technique, a semiconductor thin film light emitting element can be formed without using dicing and cleaving, and a connection pad for bonding wire connection is not required, so that the semiconductor thin film light emitting element can be sufficiently shrunk in size. .

JP 2004-207444 A

  However, as described in Patent Document 1, when a material that is difficult to remove by wet etching (for example, Pt or Pd) is included as a constituent material of the thin film wiring, as a result of operation confirmation, a certain semiconductor thin film light emitting Even when the element is determined to be a defective element, there is a problem that the defective element cannot be replaced with a new semiconductor thin film light emitting element.

  Further, even when the thin film wiring is made of a material that can be wet etched, in the wet etching process of the thin film wiring, the connection wiring to which the thin film wiring is connected (for example, the connection wiring provided on the substrate or the semiconductor) Since the connection wiring provided on the light-emitting element driving element is also etched and damaged, there is a problem that it is difficult to connect a new thin film wiring on the damaged connection wiring.

  Accordingly, the present invention has been made to solve the above-described problems of the prior art, and the object thereof is to provide a driving element on the substrate from the semiconductor thin film light emitting element or from the semiconductor thin film light emitting element to the substrate. A semiconductor light emitting device capable of easily and selectively etching the wiring up to the top, an image exposure device provided with the semiconductor light emitting device, an image forming device provided with the image exposure device, and the semiconductor light emitting device An object is to provide an image display device.

  A semiconductor light emitting device according to an aspect of the present invention includes a substrate, a substrate side electrode portion provided on the substrate, a semiconductor thin film light emitting device provided on the substrate, and the semiconductor thin film light emitting device. An electrode pad electrically connected to the semiconductor thin film light emitting element, and a removable connection wiring for electrically connecting the electrode pad and the substrate side electrode portion, the removable connection wiring is a chemical etching It is characterized in that it is made of a conductive material that can be selectively etched.

  An image exposure apparatus according to another aspect of the present invention includes an image exposure unit including the semiconductor light emitting element device.

  An image forming apparatus according to another aspect of the present invention includes the image exposure apparatus and a photoreceptor on which an electrostatic latent image is formed by the image exposure apparatus.

  An image display device according to another aspect of the present invention includes an image display unit including the semiconductor light emitting element device.

  According to the present invention, the connection wiring from the semiconductor thin film light emitting element to the substrate or from the semiconductor thin film light emitting element to the drive element through the substrate can be easily and selectively etched, so that the semiconductor thin film light emission It is easy to form a new connection wiring in the operation of replacing the element with a new one, and as a result, it is possible to increase the manufacturing yield of the device including the semiconductor thin film light emitting element.

It is a longitudinal cross-sectional view which shows roughly the structure of the principal part of the semiconductor light-emitting device which concerns on the 1st Embodiment of this invention. FIG. 2 is a plan view schematically showing a structure of a main part of the semiconductor light emitting device of FIG. 1. It is a longitudinal cross-sectional view which shows roughly the structure of the principal part of the modification of the semiconductor light-emitting device which concerns on 1st Embodiment. FIG. 4 is a plan view schematically showing a structure of a main part of the semiconductor light emitting device of FIG. 3. It is a top view which shows roughly the structure of the image exposure apparatus containing the semiconductor light-emitting device which concerns on 1st Embodiment. It is a top view which expands and shows the principal part of FIG. 1 is a plan view schematically showing a structure of an image display device including a semiconductor light emitting element device according to a first embodiment. It is a top view which expands and shows the principal part of FIG. (A)-(c) is a figure which shows an example of the removal process of the defective element in 1st Embodiment. It is a longitudinal cross-sectional view which shows schematically the structure of the principal part of the semiconductor light-emitting device which concerns on the 2nd Embodiment of this invention. It is a top view which shows roughly the structure of the principal part of the semiconductor light-emitting device of FIG. (A)-(c) is a figure which shows an example of the formation process of the removable bridge wiring in 2nd Embodiment. It is a block diagram which shows schematically the image forming apparatus which concerns on the 3rd Embodiment of this invention.

<First Embodiment>
FIG. 1 is a longitudinal sectional view schematically showing the structure of the main part of the semiconductor light emitting device according to the first embodiment, and FIG. 2 is a schematic view of the structure of the main part of the semiconductor light emitting device of FIG. FIG. FIG. 1 shows a section taken along line S1-S1 in FIG.

  As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 according to the first embodiment includes a substrate 101 provided with an upper electrode wiring 112 and a lower electrode wiring 113 as substrate side electrode portions on the main surface. A semiconductor thin film light emitting device 102 provided on the main surface of the substrate 101, and an upper electrode pad 109 and a lower electrode pad provided on the semiconductor thin film light emitting device 102 and electrically connected to the semiconductor thin film light emitting device 102 108, a removable connection wiring 111 a that electrically connects the upper electrode pad 109 and the upper electrode wiring 112, and a removable connection wiring 111 b that electrically connects the lower electrode pad 108 and the lower electrode wiring 113. is doing. The semiconductor light emitting element device 1 according to the first embodiment is usually an apparatus having a plurality of semiconductor thin film light emitting elements, but only one semiconductor thin film light emitting element is shown in FIGS. By using a plurality of regularly arranged semiconductor light emitting device 1, for example, an image exposure apparatus for forming an electrostatic latent image on a photosensitive drum in an electrophotographic image forming apparatus (see FIGS. 5 and 5 described later). 6), an image forming apparatus (shown in FIG. 13 to be described later) provided with this image exposure apparatus can be formed, and an image display device (shown in FIG. 7 described later) provided with a plurality of semiconductor light emitting element devices 1 is formed. And shown in FIG.

The substrate 101 is a substrate in which an integrated circuit (not shown) is formed, or an integrated circuit element (not shown) is provided on the main surface, and is also called an integrated substrate. The integrated substrate 101 is coated with, for example, a silicon (Si) substrate, a sapphire substrate, a glass substrate, an organic insulating film having high chemical resistance (for example, polyimide, novolac permanent resin film, fluorine resin, acrylic resin, etc.). A substrate coated with an inorganic insulating film having high chemical resistance (for example, silicon dioxide (SiO ₂ ), silicon nitride (SiN)), and a plastic having high chemical resistance (for example, polyethylene terephthalate (PET), polyethylene) A substrate made of naphthalate (PEN), polyethersulfone (PES), polycarbonate (PC), or the like).

As shown in FIG. 1, the semiconductor thin-film light emitting device 102 has a structure in which an upper contact layer 103, an upper cladding layer 104, an active layer 105, a lower cladding layer 106, and a lower contact layer 107 are stacked in order from the top. have. The semiconductor thin film light emitting element 102 is, for example, InP, In _x Ga _1-x P, GaAs, Al _x Ga _1-x As, GaP, (Al _x Ga _1-x ) _y In _1-y P, Al _x In _{1. -x P,} can be configured _{GaN, in x Ga 1-x} N, Al x Ga 1-x N, and either of the compound semiconductor of the AlN. The film thickness of the semiconductor thin film light emitting element 102 can be set to 5 μm or less, for example. The semiconductor thin film light emitting device 102 is formed by a thin film by any one of known methods such as metal organic chemical vapor deposition (MOCVD), metal organic chemical vapor phase epitaxy (MOVPE), and molecular beam epitaxy (MBE). It can be fabricated on a forming substrate (not shown). The semiconductor thin film light emitting element 102 is, for example, an LED epitaxial film having one light emitting portion, but may be an LED epitaxial film having a plurality of regularly arranged light emitting portions. The semiconductor thin film light emitting element 102 is placed on the main surface of the integrated substrate 101 using, for example, a known technique such as a chemical lift-off method, a laser lift-off method, or polishing, and an intermolecular force is applied to the integrated substrate 101. It is fixed. Therefore, the surface of the semiconductor thin film light emitting element 102 on the side of the integrated substrate 101 and the surface of the integrated substrate 101 on the side of the semiconductor thin film light emitting element 102 are sufficiently smooth (for example, typical) to obtain sufficient intermolecular force. It is desirable that the surface roughness be 5 nm or less.

  An upper electrode pad 109 is formed on the upper contact layer 103 in the semiconductor thin film light emitting element 102. In the semiconductor thin film light emitting device 102, a part of the upper contact layer 103, a part of the upper cladding layer 104, a part of the active layer 105, and a part of the surface of the lower contact layer 107 are exposed. A part of the lower cladding layer 106 is etched. A lower electrode pad 108 is formed on the exposed surface of the lower contact layer 107. Further, at least the etching end faces of the upper cladding layer 104, the active layer 105, and the lower cladding layer 106 are covered with an interlayer insulating film 110. The upper electrode pad 109 is formed so as to extend on the interlayer insulating film 110 formed on the lower contact layer 107, that is, near the end of the formation region of the semiconductor thin film light emitting element 102.

  The upper electrode pad 109 on the semiconductor thin film light emitting element 102 and the upper electrode wiring 112 on the integrated substrate 101 are connected by a removable connection wiring 111a. The lower electrode pad 108 on the lower contact layer 107 of the semiconductor thin film light emitting element 102 and the lower electrode wiring 113 on the integrated substrate 101 are connected by a removable connection wiring 111b. The removable connection wirings 111a and 111b are made of a conductive material that can be easily etched by wet etching. Further, it is desirable that the upper electrode wiring 112 and the lower electrode wiring 113 are formed so as to extend close to the integrated region of the semiconductor thin film light emitting element 102 to about several μm.

The removable connection wirings 111a and 111b are made of a material that can be selectively etched by an etchant that etches the removable connection wirings 111a and 111b without etching the upper electrode wiring 112, the lower electrode wiring 113, and the integrated substrate 101. Has been. For example, the upper electrode wiring 112 and the lower electrode wiring 113 are made of a material mainly composed of gold (Au), and the integrated substrate 101 is a Si substrate, a sapphire substrate, a glass substrate, or a highly chemical-resistant organic insulating film. (For example, a substrate coated with polyimide, a novolac permanent resin film, a fluorine resin, an acrylic resin, etc.), a substrate coated with an inorganic insulating film with high chemical resistance (for example, SiO ₂ , SiN), and In the case of a substrate made of any one of plastics with high chemical properties (for example, PET, PEN, PES, PC, etc.), the removable connection wirings 111a and 111b are made of titanium (Ti), aluminum (Al), chromium. (Cr), copper (Cu), nickel (Ni), etc. can be composed of one or more metal materials, It can also be composed of a transparent conductive film such as ITO. When Ti is used as the removable connection wirings 111a and 111b, a mixed solution of hot nitric acid (Hot HNO ₃ ) and pure water can be used as an etchant. When Al or Ni is used for the removable connection wirings 111a and 111b, a mixed solution of phosphoric acid (H ₃ PO ₄ ), nitric acid (HNO ₃ ), acetic acid (CH ₃ COOH), and water can be used as an etchant. . When Cu is used as the removable connection wirings 111a and 111b, a mixed solution of CH ₃ COOH, hydrogen peroxide (H ₂ O ₂ ), and pure water can be used as an etchant.

Further, for example, the upper electrode wiring 112 and the lower electrode wiring 113 are made of a material mainly composed of aluminum (Al), and the integrated substrate 101 is a Si substrate, a sapphire substrate, a glass substrate, an organic insulating film having high chemical resistance. (For example, a substrate coated with polyimide, a novolac-based permanent resin film, a fluorine-based resin, an acrylic resin), a substrate coated with a highly chemical-resistant inorganic insulating film (for example, SiO ₂ , SiN), and In the case of a substrate made of any one of plastics with high chemical properties (for example, PET, PEN, PES, PC, etc.), the removable connection wirings 111a and 111b are made of a metal material such as Au or Cu. Can do. When Au is used as the removable connection wirings 111a and 111b, an iodine-based etchant can be used. When Cu is used as the removable connection wiring 111b, a mixed solution of CH ₃ COOH, H ₂ O ₂ and pure water. Can be an etchant.

If the removable connection wiring 111a that connects the upper electrode pad 109 and the upper electrode wiring 112 and the surface and / or side surface of the lower contact layer 107 are not electrically insulated, the removable connection wiring 111a and the lower connection wiring 111a It is necessary to interpose a removable interlayer insulating film 114 a between the side contact layer 107. When it is necessary to electrically insulate the removable connection wiring 111b that connects the lower electrode pad 108 and the lower electrode wiring 113 and the surface and / or side surface of the lower contact layer 107, the removable connection wiring A removable interlayer insulating film 114b is interposed between 111b and the lower contact layer 107. The removable interlayer insulating films 114 a and 114 b are made of an insulating material that can be selectively etched by wet etching without etching the upper electrode wiring 112, the lower electrode wiring 113, and the integrated substrate 101. For example, the upper electrode wiring 112 and the lower electrode wiring 113 are made of a material mainly composed of Au, and the integrated substrate 101 is a Si substrate, a glass substrate, a highly chemical-resistant organic insulating film (for example, polyimide, novolak). A substrate coated with a permanent resin film, a fluorine resin, an acrylic resin, etc., a substrate coated with an inorganic insulating film with high chemical resistance (eg, SiO ₂ , SiN), and a plastic with high chemical resistance ( For example, in the case of a substrate made of PET, PEN, PES, PC, or the like, aluminum oxide (Al ₂ O ₃ ) or aluminum nitride (AlN) is used as the removable interlayer insulating films 114a and 114b. it can.

  FIG. 3 is a longitudinal sectional view schematically showing the structure of the main part of a modification of the semiconductor light emitting device according to the first embodiment, and FIG. 4 is the structure of the main part of the semiconductor light emitting device of FIG. It is a top view which shows roughly. FIG. 3 shows a cross section of FIG. 4 taken along line S3-S3. 3 and 4, the same reference numerals are given to the same or corresponding components as those shown in FIGS. 1 and 2.

  The semiconductor light emitting element device 2 shown in FIGS. 3 and 4 is provided with a selectively etchable removable layer 115 between the semiconductor thin film light emitting element 102 and the integrated substrate 101. The semiconductor light emitting element device 1 shown in FIG. The removable layer 115 is made of a material that can be selectively etched without damaging the integrated substrate 102, the upper electrode wiring 112, and the lower electrode wiring 113 when the removable layer 115 is removed by wet etching. Yes. As the material of the removable layer 115, the same material as the removable connection wirings 111a and 111b or the same material as the removable interlayer insulating films 114a and 114b can be used.

  The surface roughness of the removable layer 115 on the side where the semiconductor thin film light emitting element 102 is provided is preferably 5 nm or less. The semiconductor thin film light emitting element 102 is tightly bonded onto the removable layer 115 by intermolecular force bonding or an adhesive such as epoxy.

  FIG. 5 is a plan view schematically showing the structure of the image exposure apparatus 11 including the semiconductor light emitting element device 1 or 2 according to the first embodiment. An image exposure apparatus 11 shown in FIG. 5 has a structure in which a plurality of semiconductor thin-film light emitting elements 102 and one-dimensional array are arranged on an integrated substrate 101. This image exposure apparatus 11 is an apparatus for forming an electrostatic latent image on the surface of a uniformly charged photoreceptor (not shown) in an electrophotographic image forming apparatus. LED print head. The electrostatic latent image formed on the surface of the photoreceptor (not shown) becomes a toner image by a developing device (not shown), and the toner image is transferred to a recording sheet by a transfer device (not shown). The toner image is fixed on the recording paper by heating and pressing with a fixing device (not shown).

  6 is an enlarged plan view showing a main part P6 of FIG. As shown in FIG. 6, when a plurality of semiconductor light emitting element thin films 102 are provided on the integrated substrate 101 in a one-dimensional array, the semiconductor light emitting element thin film 102 is formed for each light emitting dot. In this case, the semiconductor thin film light emitting element thin film 102 can be replaced in units of one. As the integrated substrate 101, a substrate on which an element for driving the semiconductor thin film light emitting element 102 is formed can also be used. At this time, the connection pads 116a and 116b provided on the integrated substrate 101 are formed to be connected to the upper electrode wiring 112 and the lower electrode wiring 113, and the upper electrode pad 109 and the lower electrode wiring 109 are respectively connected via the removable connection wirings 111a and 111b. It connects with the side electrode pad 108. Further, when it is necessary to insulate the removable connection wirings 111a and 111b from the lower contact layer 107 in the semiconductor thin film element 102, removable interlayer insulating films 114a and 114b are formed.

  FIG. 7 is a plan view schematically showing the structure of the image display device 12 including the semiconductor light emitting element device according to the first embodiment, and FIG. 8 is an enlarged plan view showing a main part P8 of FIG. It is. As shown in FIGS. 7 and 8, an image display device 12 such as an LED display can be configured by providing a plurality of semiconductor thin film light emitting elements 102 in a two-dimensional array on an integrated substrate 101. The image display device 12 is formed by two-dimensionally arranging the semiconductor thin film light emitting elements 102 on the integrated substrate 101. The upper electrode common wiring 117 is electrically connected to the upper electrode pad 109 provided on the semiconductor thin film light emitting element 102 using a removable connection wiring 111a. The lower electrode common wiring 118 is electrically connected to the lower electrode pad 108 provided on the semiconductor thin film light emitting element 102 by using a removable connection wiring 111b. Further, removable interlayer insulating films 114 a and 114 b are formed between the removable connection wirings 111 a and 111 b and the semiconductor thin film light emitting element 102 as necessary. The upper electrode common wiring 117 and the lower electrode common wiring 118 are formed in a matrix using a common wiring interlayer insulating film 120. And it can drive by connecting the connection pad 119 extended from both common wiring to the apparatus outer peripheral part vicinity, and an external drive circuit.

  An energization test is performed on the semiconductor light emitting device of FIG. 1 or FIG. 3, the image exposure device 11 of FIG. 5, or the image display device 12 of FIG. 7, and as a result, a defective element (that is, a measurement result that does not satisfy a predetermined standard) If it is determined that the semiconductor thin film light emitting element is obtained, the defective element can be removed and a new semiconductor thin film light emitting element can be attached by the following method.

  FIGS. 9A to 9C are diagrams illustrating an example of a defective element removing process according to the first embodiment. As shown in FIG. 9A, first, a photolithographic technique is used on the main surface of the integrated substrate 101 provided with the semiconductor light emitting thin film element so as to open a region including the semiconductor thin film light emitting element to be removed. A resist 131 is formed.

  Next, the photoresist 131 is used as an etchant capable of selectively etching the removable connection wirings 111a and 111b without etching other structures exposed in the opening 132 (for example, the upper electrode wiring 112 and the lower electrode wiring 113). By immersing the integrated substrate 101 provided with, the removable connection wirings 111a and 111b exposed in the opening 132 of the photoresist 131 are selectively etched.

  Next, as shown in FIG. 9B, the other components exposed in the opening 132 (for example, the upper electrode wiring 112 and the lower electrode wiring 113) are not etched, and the removable interlayer insulating films 114a and 114b are formed. By immersing the integrated substrate 101 provided with the photoresist 131 in an etchant that can be selectively etched, the removable interlayer insulating films 114a and 114b exposed in the openings 132 of the photoresist 131 are selectively etched. .

Next, as shown in FIG. 9C, the semiconductor thin film light emitting element 102 is selectively etched without etching other structures exposed in the opening 132 (for example, the upper electrode wiring 112 and the lower electrode wiring 113). By immersing the integrated substrate 101 provided with the photoresist 131 in an etchant that can be etched, the semiconductor thin film light emitting element 102 exposed in the opening 132 of the photoresist 131 is selectively etched. For example, when the semiconductor thin film light emitting element 102 is made of a material mainly containing GaAs, a mixed liquid of H ₃ PO ₄ , H ₂ O ₂ and pure water can be used as an etchant. By infiltrating the etchant from the etching end face of the semiconductor thin film light emitting device 102, the semiconductor thin film light emitting device 102 recognized as defective can be completely removed from the integrated substrate 101.

The semiconductor thin film light emitting element 102 is a nitride-based semiconductor, such as AlN, GaN, Al _x Ga _1-x N (0 <x <1), In _y Ga _1-y N (0 <y <1), or the like. In the case where it is made of a material, it is very difficult to remove the semiconductor thin film light emitting element 102 by wet etching. In such a case, a selectively etchable removable layer 115 is formed on the integrated substrate 101 in advance as shown in FIGS. 3 and 4, and the semiconductor is formed on the removable layer 115 using intermolecular force. The thin film light emitting element 102 is configured. For the semiconductor thin film light emitting device 102 in which the defect is recognized, after the removal of the removable connection wirings 111a and 111b and the removable interlayer insulating films 114a and 114b as described above, or the removable connection wirings 111a and 111b or the removable interlayer. Simultaneously with the step of removing the insulating films 114a and 114b, the integrated substrate 101 is immersed in an etchant capable of selectively etching the removable layer 115, and the removable layer 115 just below the semiconductor thin film light emitting element 102 in which a defect is recognized is etched. Then, the semiconductor thin film light emitting element 102 is removed.

  Further, the upper electrode pad 109 is formed by extending to the vicinity of the end of the region where the semiconductor thin film light emitting element 102 is formed, and the upper electrode wiring 112 and the lower electrode wiring 113 are formed in the integrated region of the semiconductor thin film light emitting element 102. Is stretched so as to be close to about several μm. For this reason, the length of the removable connection wirings 111a and 111b can be shortened as much as possible, and an increase in electrical resistance can be suppressed.

  As described above, the normal semiconductor thin film light emitting element 102 is again attached to the region where the defective semiconductor thin film light emitting element 102 has been removed, and the removable thin film wirings 111a and 111b (or non-removable wiring) are partially applied. By forming, the corrected semiconductor thin film light emitting element 102 is connected to the upper electrode wiring 112 and the lower electrode wiring 113. As a method for partially forming the thin film wiring as described above, for example, there is a method of partially patterning the thin film wiring by a lithography technique or a method of partially forming the thin film wiring by an ink jet method.

  As described above, in the semiconductor light emitting device 1, 2, the image exposure apparatus 11, the image forming apparatus, and the image display apparatus 12 according to the first embodiment, the removable connection wirings 111 a and 111 b (or the removable connection). Since the wirings 111a and 111b and the removable layer 115 can be selectively etched by chemical etching, the removable thin film wirings 111a and 111b can be selectively etched when a defect is recognized in the semiconductor thin film light emitting element 102. The semiconductor thin film light emitting element that has been found to be defective can be completely removed from the main surface of the integrated substrate 101. As a result, the semiconductor thin film light emitting element can be replaced with a normal semiconductor thin film light emitting element. Can be improved.

<Second Embodiment>
FIG. 10 is a longitudinal sectional view schematically showing the structure of the main part of the semiconductor light emitting device 3 according to the second embodiment. FIG. 11 shows the structure of the main part of the semiconductor light emitting device 3 of FIG. It is a top view shown roughly. FIG. 10 shows a section taken along line S10-S10 in FIG.

  As shown in FIGS. 10 and 11, the semiconductor light emitting device 3 according to the second embodiment includes a substrate 201 having an upper electrode wiring 212 and a lower electrode wiring 213 as substrate-side electrode portions on the main surface. A semiconductor thin film light emitting element 202 provided on the main surface of the substrate 201, and an upper electrode pad 209 and a lower electrode pad provided on the semiconductor thin film light emitting element 202 and electrically connected to the semiconductor thin film light emitting element 202. 208, a removable bridge wiring 211a that electrically connects the upper electrode pad 209 and the upper electrode wiring 212, and a removable bridge wiring 211b that electrically connects the lower electrode pad 208 and the lower electrode wiring 213. is doing. The semiconductor thin film light emitting element 202 has a structure in which an upper contact layer 203, an upper cladding layer 204, an active layer 205, a lower cladding layer 206, and a lower contact layer 207 are stacked in order from the top. The upper electrode wiring 212, the lower electrode wiring 213, the substrate 201, the semiconductor thin film light emitting element 202, the upper electrode pad 209, the lower electrode pad 208, the upper electrode wiring 212, and the lower electrode wiring 213 in FIGS. The upper electrode wiring 112, the lower electrode wiring 113, the substrate 101, the semiconductor thin film light emitting element 102, the upper electrode pad 109, the lower electrode pad 108, the upper electrode wiring 112, and the lower electrode wiring 113 in FIGS. It is the same composition. 10 and FIG. 11, the upper contact layer 203, the upper cladding layer 204, the active layer 205, the lower cladding layer 206, and the lower contact layer 207 are the same as the upper contact layer 103 and the upper cladding layer in FIGS. The configuration is the same as that of the layer 104, the active layer 105, the lower cladding layer 106, and the lower contact layer 107.

  The removable bridge wiring 211 a has a bridge-shaped portion that is separated from the semiconductor thin film light emitting element 202 between the upper electrode pad 209 and the upper electrode wiring 212. The removable bridge wiring 211 b has a bridge-shaped portion that is separated from the semiconductor thin film light emitting element 202 between the lower electrode pad 208 and the lower electrode wiring 213. The structure in which the removable bridge wirings 211a and 211b are separated from the semiconductor thin film light emitting element 202 and the integrated substrate 201 is also referred to as a “hollow structure”. The removable bridge wirings 211a and 211b are made of a material that can be selectively etched by an etchant that etches the removable bridge wirings 211a and 211b without etching the upper electrode wiring 212, the lower electrode wiring 213, and the integrated substrate 201. Has been. The removable bridge wirings 211a and 211b are made of the same material as the removable connection wirings 111a and 111b in FIGS.

  FIGS. 12A to 12C are diagrams illustrating an example of a process of forming the removable bridge wirings 211a and 211b in the second embodiment.

  As shown in FIG. 12A, first, a mask resist 221 is pattern-formed using a negative photosensitive resist in the portions where the hollow structures of the removable bridge wirings 211a and 211b are to be formed.

  Next, as shown in FIG. 12 (b), only a portion for forming the removable bridge wiring (211a, 211b in FIG. 12 (c)) is formed using a negative or positive type photosensitive resist for lift-off. A mask resist 222 having openings (portion 223) is formed.

  Next, a thin film for the removable bridge wiring (211a and 211b in FIG. 12C) is formed in a region including the inside of the opening 223 of the mask resist 222 by using an evaporation method or a sputtering method. Next, the mask resist 221 and the mask resist 222 are removed using an organic solvent. At the same time, unnecessary materials for the removable bridge wiring formed on the mask resist 221 and the mask resist 222 are removed by lift-off.

  Through the above steps, removable bridge wirings 211a and 211b as shown in FIG. 12C are formed. By using the removable bridge wirings 211a and 211b, it is not necessary to form the removable interlayer insulating film 114 described in the first embodiment, and as a result, the semiconductor thin film light emitting element 202 can be removed more easily.

  Further, the semiconductor light emitting device 3 according to the second embodiment may include a removable layer corresponding to the removable layer 115 of FIG. Furthermore, as in the case of the first embodiment, the image exposure apparatus 11, the image forming apparatus, and the image display apparatus 12 may be formed using the semiconductor light emitting element device 3 according to the second embodiment.

  As described above, in the semiconductor light emitting element device 3, the image exposure device 11, the image forming device, and the image display device 12 according to the second embodiment, the removable bridge wirings 211a and 211b (or the removable connection wiring 211a). , 211b and the removable layer) can be selectively etched by chemical etching, so that when the semiconductor thin film light emitting element 202 is defective, the removable bridge wirings 211a and 211b can be selectively etched, The semiconductor thin film light emitting element in which the defect is recognized can be completely removed from the main surface of the integrated substrate 201. As a result, it can be replaced with a normal semiconductor thin film light emitting element, and the yield rate can be improved dramatically.

<Third Embodiment>
FIG. 13 is a block diagram schematically showing an image forming apparatus 13 according to the third embodiment of the present invention. As shown in FIG. 13, the image forming apparatus 13 has four processes for forming an image of each color of yellow (Y), magenta (M), cyan (C), and black (K) using an electrophotographic method. It has units 301-304. The process units 301 to 304 are arranged in tandem along the conveyance path of the recording medium 305. Each of the process units 301 to 304 includes a photosensitive drum 303a as an image carrier, a charging device 303b that is disposed around the photosensitive drum 303a and charges the surface of the photosensitive drum 303a, and a charged photosensitive drum. And an exposure device 303c that forms an electrostatic latent image by selectively irradiating the surface of 303a with light. As the exposure device 303c, the image exposure device 11 of the first or second embodiment is used.

  The image forming apparatus 13 includes a developing device 303d that conveys toner to the surface of the photosensitive drum 303a on which the electrostatic latent image is formed, and a cleaning device 303e that removes toner remaining on the surface of the photosensitive drum 303a. is doing. The photosensitive drum 303a is rotated in the direction of the arrow by a driving mechanism (not shown) including a driving source and gears. Further, the image forming apparatus 13 includes a paper cassette 306 for storing a recording medium 305 such as paper, and a hopping roller 307 for separating and transporting the recording medium 305 one by one. The pinch rollers 308 and 309 and the recording medium 305 are sandwiched downstream of the hopping roller 307 in the recording medium 305 conveyance direction, and the skew of the recording medium 305 is corrected together with the pinch rollers 308 and 309 and conveyed to the process units 301 to 304. Registration rollers 310 and 311 are provided. The hopping roller 307 and the registration rollers 310 and 311 rotate in conjunction with a driving source (not shown).

  The image forming apparatus 13 includes a transfer roller 312 that is disposed to face the photosensitive drum 303a. The transfer roller 312 is made of semiconductive rubber or the like. The potential of the photosensitive drum 303a and the potential of the transfer roller 312 are set so that the toner image on the photosensitive drum 303a is transferred onto the recording medium 305. The image forming apparatus includes a fixing device 313 for fixing the toner image on the recording medium 305 by heating and pressing, and rollers 314, 316, 315, and 317 for discharging the recording medium 305 that has passed through the fixing device 313. Is provided.

  The recording media 305 loaded on the paper cassette 306 are separated and conveyed one by one by a hopping roller 307. The recording medium 305 passes through the registration rollers 310 and 311 and the pinch rollers 308 and 309 and passes through the process units 301 to 304 in this order. In each of the process units 301 to 304, the recording medium 305 passes between the photosensitive drum 303 a and the transfer roller 312, and each color toner image is transferred in order, and is heated and pressed by the fixing device 313, and each color toner is transferred. The image is fixed on the recording medium 305. Thereafter, the recording medium 305 is discharged to the stacker unit 318 by a discharge roller.

  As described above, in the semiconductor light emitting element devices 1 to 3 according to the first or second embodiment, since the yield rate of the image exposure apparatus 11 can be dramatically improved, the third embodiment. The occurrence rate of defects in the image forming apparatus 13 can be reduced.

  1, 2, 3 Semiconductor light emitting device, 11 Image exposure device, 12 Image display device, 13 Image forming device, 101, 201 Integrated substrate, 102, 202 Semiconductor thin film light emitting device, 103, 203 Upper contact layer, 104, 204 Upper Cladding layer, 105, 205 Active layer, 106, 206 Lower cladding layer, 107, 207 Lower contact layer, 108, 208 Lower electrode pad, 109, 209 Upper electrode pad, 110 Interlayer insulating film, 111a, 111b Removable connection Wiring, 112, 212 Upper electrode wiring, 113, 213 Lower electrode wiring, 114a, 114b Removable interlayer insulation film, 115 Removable layer, 116a, 116b Connection pad, 211a, 211b Removable bridge wiring.

Claims (13)

A substrate,
A substrate-side electrode portion provided on the substrate;
A semiconductor thin film light emitting device provided on the substrate;
An electrode pad provided on the semiconductor thin film light emitting element and electrically connected to the semiconductor thin film light emitting element;
Removable connection wiring for electrically connecting the electrode pad and the substrate side electrode part,
The said removable connection wiring is comprised with the electroconductive material which can be selectively etched by chemical etching. The semiconductor light-emitting device characterized by the above-mentioned.   2. The semiconductor light emitting device according to claim 1, wherein the removable connection wiring is a wiring layer extending from the electrode pad to the substrate side electrode portion via the substrate. Further comprising a removable interlayer insulating film interposed between the semiconductor thin film light emitting element and the removable connection wiring,
The semiconductor light emitting element device according to claim 2, wherein the removable interlayer insulating film is made of an insulating material that can be selectively etched by chemical etching.   2. The semiconductor according to claim 1, wherein the removable connection wiring is a removable bridge wiring having a bridge-shaped portion that is separated from the semiconductor thin film light emitting element between the electrode pad and the substrate-side electrode portion. Light emitting element device.   5. The semiconductor light emitting element device according to claim 1, wherein the electrode pad is formed to have a portion extending to the vicinity of an end of the semiconductor thin film light emitting element. A removable interlayer insulating film interposed between a side surface of the semiconductor thin film light emitting element and the removable connection wiring;
The semiconductor light emitting device according to claim 1, wherein the removable interlayer insulating film is made of an insulating material that can be selectively etched by chemical etching. A removable layer interposed between the substrate and the semiconductor thin film light emitting device;
The semiconductor light emitting device according to claim 1, wherein the removable layer is made of a material that can be selectively etched by chemical etching.   The said removable connection wiring has any one or two or more of Ti, Al, Cr, Cu, and Ni as a main component, The any one of Claim 1 thru | or 7 characterized by the above-mentioned. Semiconductor light emitting device. The semiconductor light emitting device according to claim 6, wherein the removable interlayer insulating film is mainly composed of either Al ₂ O ₃ or AlN. The semiconductor light-emitting element device according to claim 7, wherein the removable layer is mainly composed of any one of Al, Al ₂ O ₃ , SiO ₂ , SiN, and Ti.   An image exposure apparatus comprising an image exposure unit including the semiconductor light-emitting element device according to claim 1. An image exposure apparatus according to claim 11;
An image forming apparatus comprising: a photoreceptor on which an electrostatic latent image is formed by the image exposure apparatus. An image display device comprising an image display unit including the semiconductor light-emitting element device according to claim 1.

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