JP2012015293A - Substrate treatment device and substrate treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treatment device and a substrate treatment method in which particles of organic matters or the like adhering onto a substrate can be removed effectively by generating OH radicals abundantly near the substrate to be cleaned by utilizing photocatalyst reaction.SOLUTION: The substrate treatment device comprises a first nozzle 11 which cleans the surface W1 to be treated of a substrate W to be treated, and a second nozzle 12 which supplies liquid onto the surface W1 to be treated. The first nozzle 11 comprises a photocatalyst 11a which faces the surface W1 to be treated and comes into contact with the liquid, a holding member 11b which holds the photocatalyst 11a, and a light source 11c for irradiating light to the photocatalyst 11a through the holding member 11b.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  A substrate processing apparatus supplies a processing liquid to a surface (surface to be processed) of a substrate such as a semiconductor wafer or a glass substrate in a manufacturing process of a semiconductor device or a liquid crystal display device, and processes the surface to be processed. Device. Examples of the substrate processing apparatus include a resist stripping apparatus that strips a resist film that is no longer necessary from the surface to be processed, and a cleaning apparatus that removes and cleans particles adhering to the surface to be processed. it can.

  By the way, a cleaning apparatus is required to have a function of cleaning without destroying a fine structure with the recent miniaturization of devices. As a cleaning method therefor, as a physical method, for example, a method in which droplets are sprayed and ejected in a spray form toward a substrate to remove particles, a cleaning method by cavitation crushing using ultrasonic waves, etc. (See Patent Document 1 below as an example). On the other hand, as a chemical method, for example, there is a method using an oxidation-reduction reaction.

JP 2006-120817 A

  However, for example, in the case of the method of physically removing particles from the substrate using the two-fluid spray nozzle disclosed in Patent Document 1, the substrate must be controlled unless appropriate control is performed on the particle size, flow velocity, etc. of the droplets. The fine structure above will be destroyed. In addition, cleaning using ultrasonic waves is effective in removing organic particles because hydroxyl radicals (.OH) (hereinafter referred to as “OH radicals”) are generated by cavitation crushing. If it is in the vicinity of the substrate, it will also lead to destruction of the structure, so it is not suitable for pattern cleaning having a fine structure.

  In the method using the oxidation-reduction reaction, the force to remove particles adhering to the substrate is certainly great, but there is a possibility that the surface of the substrate is corroded or altered. Therefore, it is not universal in relation to the object to be cleaned.

  Furthermore, as described above, the use of OH radicals is beneficial for the removal of organic substances, but the lifetime of OH radicals is so short that it is said to be 1 / 1,000,000 second, so that OH radicals are simply destroyed by cavitation. In the method of generating radicals, it is difficult to perform cleaning effectively using OH radicals on the substrate.

  The present invention has been made to solve the above problems, and the object of the present invention is to generate particles such as organic substances adhering on the substrate by generating OH radicals in the vicinity of the substrate to be cleaned. A substrate processing apparatus and a substrate processing method that can be effectively removed.

  A first feature according to an embodiment of the present invention is that, in the substrate processing apparatus, a first nozzle that cleans the surface to be processed on the substrate to be processed and a second nozzle that supplies a liquid onto the surface to be processed The first nozzle includes a photocatalyst that faces the surface to be processed and contacts the liquid, a holding member that holds the photocatalyst, and a light source that transmits the light to the photocatalyst through the holding member.

  The second feature of the embodiment of the present invention is that, in the substrate processing apparatus, a nozzle that discharges and cleans the processing liquid onto the surface to be processed on the substrate to be processed, and an ultrasonic that applies ultrasonic waves to the processing liquid. And a device for attenuating vibration of ultrasonic waves formed of a porous material provided at a position where a treatment liquid to which ultrasonic waves are applied is discharged.

  According to a third aspect of the present invention, in the substrate processing method, the step of holding and rotating the substrate to be processed and supplying the liquid from the second nozzle to the surface to be processed of the substrate. The surface to be processed is cleaned by a first nozzle that includes a process, a photocatalyst that faces the surface to be processed, contacts the liquid, a holding member that holds the photocatalyst, and a light source that transmits the light through the holding member And a step of performing.

  According to a fourth aspect of the present invention, in the substrate processing method, the step of holding and rotating the substrate to be processed, and applying ultrasonic waves to the processing liquid discharged to the processing surface on the substrate Cleaning by discharging the treatment liquid to which the vibration is damped by the process and the device for attenuating the vibration of the ultrasonic wave formed by the porous material provided at the position where the treatment liquid to which the ultrasonic wave is applied is discharged And a process of performing.

  According to the present invention, there is provided a substrate processing apparatus and a substrate processing method capable of effectively removing particles such as organic substances adhering to a substrate by generating abundant OH radicals in the vicinity of the substrate to be cleaned. Can be provided.

It is sectional drawing which shows the main structures of the substrate processing apparatus in the 1st and 2nd embodiment of this invention. It is an enlarged view which expands and shows a part with the 1st nozzle in the 1st Embodiment of this invention, and the board | substrate used as washing | cleaning object. It is an enlarged view which expands and shows a part with the board | substrate used as the 1st nozzle and the washing | cleaning target in the 2nd Embodiment of this invention. It is sectional drawing which shows the main structures of the substrate processing apparatus in the 3rd Embodiment of this invention. It is sectional drawing which shows the main structures of the substrate processing apparatus in the 4th Embodiment of this invention. It is an enlarged view which expands and shows a part with the supply nozzle in the 4th Embodiment of this invention, and the board | substrate used as cleaning object.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a cross-sectional view showing a main configuration of a substrate processing apparatus 1 in the first and second embodiments of the present invention. As shown in FIG. 1, the substrate processing apparatus 1 in the first and second embodiments includes a processing box 2 serving as a processing chamber, a cup 3 provided in the processing box 2, and a cup 3. A holding table 4 is provided that holds the substrate W in a horizontal state, and a rotating mechanism 5 that rotates the holding table 4 in a horizontal plane. Further, a first nozzle 11 for cleaning the surface to be processed W1 is positioned above the substrate W on the holding table 4, and the first nozzle 11 can be moved along the surface to be processed W1 by the moving mechanism 6. It is said that.

  Further, a second nozzle 12 for supplying a liquid for forming the liquid film M on the surface to be processed W1 extends from the side of the processing box 2. The second nozzle 12 is connected to a liquid supply unit (not shown) and appropriately supplies a liquid to the surface to be processed W1 based on control from a control unit (not shown). The control unit also controls the rotating mechanism 5 and the moving mechanism 6 to rotate the holding table 4 and move the first nozzle 11 on the surface to be processed W1 as necessary.

  The processing box 2 accommodates the cup 3, the holding table 4, the first nozzle 11, or the second nozzle 12. At the top of the processing box 2, a fan 2a with a filter for downflow is provided. The fan 2a is also electrically connected to a control unit (not shown) and is driven based on the control of the control unit.

  The cup 3 is formed in a cylindrical shape and accommodates the holding table 4 therein. The upper part of the peripheral wall of the cup 3 is inclined inward in the radial direction. The holding table 4 is provided inside the cup 3 so as to be rotatable in a horizontal plane on the upper side thereof, and holds the substrate W in a detachable manner by the holding member 4a. At this time, the substrate W is held so as to face the fan 2 a so that the processing target surface W <b> 1 faces the first nozzle 11.

  The rotating mechanism 5 includes a rotating shaft connected to the holding table 4 and a motor (not shown) that rotates the rotating shaft. This motor is electrically connected to a control unit (not shown) and is driven based on the control of the control unit. The rotating mechanism 5 rotates a rotating shaft in the R direction shown in FIG. 1 by a motor, for example, and rotates the holding table 4 around a rotating shaft that intersects the processing target surface W1 of the substrate W.

  The moving mechanism 6 includes an arm that supports the first nozzle 11, a rotating shaft connected to the arm, and a motor (not shown) that rotates the rotating shaft. This motor is electrically connected to a control unit (not shown) and is driven based on the control of the control unit. The moving mechanism 6 rotates the rotation axis in the R direction shown in FIG. 1 by a motor, and moves the first nozzle 11 through the arm along the surface W1 of the substrate W in the X-axis direction that is the radial direction of the substrate W. (See FIG. 1). The moving mechanism 6 also has a mechanism for moving the first nozzle 11 in the Z-axis direction (see FIG. 1) which is the vertical direction.

  The first nozzle 11 has a function of causing a photocatalytic reaction with the surface to be processed W1. FIG. 2 is an enlarged view showing a part of the first nozzle 11 and the substrate W to be processed (surface to be processed W1) in the first embodiment of the present invention.

  The first nozzle 11 includes a photocatalyst 11a provided at a position facing the surface to be processed W1, a holding member 11b that holds the photocatalyst 11a, and a light source that transmits light to the photocatalyst 11a through the holding member 11b. 11c. Since the light source 11c is supported by the arm of the moving mechanism 6, the first nozzle 11 can freely move on the processing target surface W1 based on an instruction from a control unit (not shown). .

  Note that the “nozzle” generally refers to a “cylindrical device for ejecting gas or liquid”, but in the embodiment of the present invention, for convenience, it includes a photocatalyst 11a, a holding member 11b, and a light source 11c. The “first nozzle 11” that is not provided with an ejection hole is also expressed as “nozzle”.

  As the photocatalyst 11a, titanium oxide (TiO2) is employed in the first embodiment. However, any substance may be used as long as it can serve as a photocatalyst. The photocatalyst 11a is held on the holding member 11b by sputtering titanium oxide on the holding member 11b, for example.

  On the other hand, the photocatalyst 11a exhibits its function when light is applied thereto. In the embodiment of the present invention, the holding member 11b is required to have a function of transmitting light from the light source 11c because of its configuration. Therefore, the holding member 11b is, for example, quartz.

  The light source 11c applies light to the photocatalyst 11a. In order to perform the photocatalytic reaction, ultraviolet light is irradiated from the light source 11c in the embodiment of the present invention.

  From the second nozzle 12, for example, ultrapure water is supplied from a liquid supply unit (not shown). The ultrapure water supplied from the second nozzle 12 forms a liquid film M on the surface to be processed W1. The thickness of the liquid film M is, for example, about 1 to 2 mm. The photocatalyst reaction is performed by bringing the photocatalyst 11a of the first nozzle 11 into contact with the formed liquid film M.

  Here, the flow of substrate processing will be described. First, the substrate W is held on the holding table 4 via the clamping member 4a. When the ultrapure water is supplied from the second nozzle 12 onto the surface to be processed W1 of the substrate W, the rotating mechanism 5 rotates the substrate W through the holding table 4, and thus the surface to be processed W1. A liquid film M is formed. Then, the moving mechanism 6 moves the first nozzle 11 to a position where the photocatalyst 11a is in contact with the liquid film M on the processing target surface W1. At this time, as shown in FIG. 1 or FIG. 2, the portion of the photocatalyst 11a is impregnated in the liquid film M and is at a very close distance from the surface to be treated W1. Note that while the photocatalyst 11a is in contact with the liquid film M, ultrapure water is continuously supplied from the second nozzle 12 to the surface to be processed W1.

  When the ultraviolet light is irradiated from the light source 11c, a photocatalytic reaction occurs between the photocatalyst 11a and the surface to be processed W1. OH radicals are generated by the photocatalytic reaction, and the OH radicals are supplied to the processing surface W1 of the substrate W, whereby the processing surface W1 is cleaned and organic substances (particles) adhering to the processing surface W1 are removed. be able to.

  By adopting the configuration described above, OH radicals can be generated abundantly using a photocatalytic reaction in the vicinity of the substrate to be cleaned, and particles such as organic substances adhering to the substrate can be effectively removed. A substrate processing apparatus and a substrate processing method can be provided.

  In particular, by reacting the photocatalyst 11a close to the surface to be processed W1, the generated OH radicals can be supplied abundantly on the surface to be processed W1 before disappearing, and the particles are more effectively removed accordingly. be able to.

  Heretofore, the description has been given by taking ultrapure water as an example of the liquid supplied from the second nozzle 12 onto the surface to be processed W1. However, the liquid supplied onto the surface to be processed W1 is not limited to ultrapure water. For example, an oxygen bubble may be supplied together with an oxygen saturated solution in which oxygen is excessively dissolved or ultrapure water as the liquid supplied onto the surface W1 to be processed. By supplying such a liquid from the second nozzle 12 onto the surface to be processed W1, the oxygen reduction reaction is promoted and the photocatalytic reaction is promoted, so that the surface to be processed is more abundant. Particles such as organic substances supplied on W1 and attached on the substrate can be more effectively removed.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. In the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and the description of the same components is omitted because it is duplicated.

  FIG. 3 is an enlarged view showing a part of the first nozzle and the substrate to be cleaned in the second embodiment of the present invention. The difference between the first nozzle 11 in the first embodiment of the present invention and the first nozzle 21 in the second embodiment is that the photocatalyst 22 is not composed only of titanium oxide (TiO2), This is a point constituted by titanium oxide (TiO2) 22a and a metal catalyst 22b electrically connected to the titanium oxide 22a. The flow of substrate processing for cleaning the surface to be processed W1 using other configurations and photocatalytic reactions is the same as that described in the first embodiment.

  Here, platinum (Pt) is employed as the metal catalyst 22b in the second embodiment. However, any metal capable of ohmic contact can be employed as the metal catalyst 22b.

  Further, the distance from the titanium oxide 22a to the opposite surface to be processed W1 and the distance from the metal catalyst 22b to the opposite surface to be processed W1 are shorter than the latter and the titanium oxide 22a is closer to the surface to be processed W1. Has been placed. This arrangement is for supplying OH radicals generated as a result of the photocatalytic reaction to the surface to be processed W1 before disappearing.

  As long as the relationship between the titanium oxide 22a and the metal catalyst 22b described so far can be maintained, the arrangement of the two may be any arrangement such as a lattice shape or a stripe shape.

  By making the configuration of the photocatalyst 22 as described above, more OH radicals are generated using the photocatalytic reaction near the substrate to be cleaned than when the configuration described in the first embodiment is adopted. Thus, a substrate processing apparatus and a substrate processing method capable of effectively removing particles such as organic substances adhering to the substrate can be provided.

(Third embodiment)
Next, a third embodiment of the present invention will be described. In the third embodiment, the same components as those described in the first or second embodiment are denoted by the same reference numerals, and the description of the same components is duplicated. I will omit it.

  In the third embodiment, in addition to the cleaning of the substrate W using the photocatalytic reaction described in the first or second embodiment so far, cleaning using a physical method is also performed. Is. Here, the cleaning method using a physical method is, for example, a method of removing particles by spraying droplets in a spray toward the substrate, a cleaning method by cavitation crushing using ultrasonic waves, etc. It is.

  FIG. 4 is a cross-sectional view showing the main configuration of the substrate processing apparatus 31 according to the third embodiment of the present invention. The difference from the configuration in the first or second embodiment is that the first nozzle 41 adopts a configuration corresponding to cleaning the surface to be processed W1 by a physical method. And the liquid supply part 42 for supplying a liquid to the 1st nozzle 41, and the gas supply part 43 for supplying gas are provided.

  The first nozzle 41 has the following configuration, for example. First, for example, a two-fluid nozzle is disposed in the center of the first nozzle 41 (not shown in FIG. 4). The two-fluid nozzle includes an inner cylinder serving as a central flow path to which liquid is supplied as the first fluid, an outer cylinder serving as a ring-shaped flow path that accommodates the inner cylinder and is supplied with gas as the second fluid, and the like. have. The liquid as the first fluid is supplied from the liquid supply unit 42, and the gas as the second fluid is supplied from the gas supply unit 43. On the surface to be processed W1, liquid is atomized (atomized) from the nozzle hole of the inner cylinder with the gas discharged from the nozzle hole of the outer cylinder and sprayed.

  Around the two-fluid nozzle, there is provided a nozzle that performs the photocatalytic reaction including the above-described photocatalyst, holding member, and light source. The photocatalytic reaction is as described above, and either the configuration shown in the first embodiment or the configuration shown in the second embodiment may be adopted. In the cleaning process, any method may be applied to the surface W1 first.

  In this way, by configuring so that not only chemical cleaning but also physical cleaning can be performed together, OH radicals can be generated abundantly using a photocatalytic reaction in the vicinity of the substrate to be cleaned. Thus, it is possible to provide a substrate processing apparatus and a substrate processing method capable of effectively removing particles such as organic substances adhering to the substrate and also physically removing the particles.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described. In the fourth embodiment, the same components as those described in the first to third embodiments are denoted by the same reference numerals, and the description of the same components is duplicated. Omitted.

  In the fourth embodiment, regarding a cleaning method using OH radicals, a configuration for supplying OH radicals to the surface W1 to be treated more abundantly will be described. FIG. 5 is a cross-sectional view showing a main configuration of a substrate processing apparatus 51 according to the fourth embodiment of the present invention.

  As shown in FIG. 5, the substrate processing apparatus 51 in the fourth embodiment includes a processing box 2 serving as a processing chamber, a cup 3 provided in the processing box 2, and a substrate provided in the cup 3. A holding table 4 that holds W in a horizontal state and a rotating mechanism 5 that rotates the holding table 4 in a horizontal plane are provided. Further, a supply nozzle 61 for cleaning the surface to be processed W1 is positioned above the substrate W on the holding table 4, and the supply nozzle 61 is movable along the surface to be processed W1 by the moving mechanism 6. .

  Furthermore, a liquid supply part 42 for supplying liquid to the supply nozzle 61 and a gas supply part 43 for supplying gas are provided. The liquid supply unit 42 and the gas supply unit 43 appropriately supply a liquid or gas to the supply nozzle 61 based on control from a control unit (not shown). The control unit also controls the rotating mechanism 5 and the moving mechanism 6 to rotate the holding table 4 and move the supply nozzle 61 on the surface to be processed W1 as necessary.

  The processing box 2 accommodates the cup 3, the holding table 4, or the supply nozzle 61. At the top of the processing box 2, a fan 2a with a filter for downflow is provided. The fan 2a is also electrically connected to a control unit (not shown) and is driven based on the control of the control unit.

  The cup 3 is formed in a cylindrical shape and accommodates the holding table 4 therein. The upper part of the peripheral wall of the cup 3 is inclined inward in the radial direction. The holding table 4 is provided inside the cup 3 so as to be rotatable in a horizontal plane on the upper side thereof, and holds the substrate W in a detachable manner by the holding member 4a. At this time, the surface W1 of the substrate W is held facing the fan 2a so as to face the supply nozzle 61.

  The rotating mechanism 5 includes a rotating shaft connected to the holding table 4 and a motor (not shown) that rotates the rotating shaft. This motor is electrically connected to a control unit (not shown) and is driven based on the control of the control unit. The rotating mechanism 5 rotates the rotating shaft in the R direction shown in FIG. 5 by a motor, for example, and rotates the holding table 4 around the rotating shaft that intersects the surface W1 of the substrate W.

  The moving mechanism 6 includes an arm that supports the supply nozzle 61, a rotating shaft connected to the arm, and a motor (not shown) that rotates the rotating shaft. This motor is electrically connected to a control unit (not shown) and is driven based on the control of the control unit. The moving mechanism 6 rotates the rotation axis in the R direction shown in FIG. 5 by a motor, and causes the supply nozzle 61 to pass through the arm along the surface W1 of the substrate W along the X axis direction (FIG. 5). The moving mechanism 6 also has a mechanism for moving the supply nozzle 61 in the Z-axis direction (see FIG. 5), which is the vertical direction.

  The supply nozzle 61 generates OH radicals based on cavitation collapse using ultrasonic waves and injects them onto the surface to be processed W1. The supply nozzle 61 is supplied with liquid and gas from the liquid supply unit 42 and the gas supply unit 43 and mixed to generate cavitation.

  However, if the cavitation collapse occurs in the vicinity of the surface to be processed W1, the fine structure on the surface to be processed W1 may be destroyed. Therefore, as shown in FIG. 6 which is an enlarged view showing a part of the supply nozzle 61 and the substrate W to be cleaned in the fourth embodiment of the present invention, the moving mechanism 6 which is the original component is shown. From the arm side, in addition to the ultrasonic generator 61a and the nozzle body 61b, the supply nozzle 61 is combined with a device (hereinafter referred to as a “vibration damping device”) 61c for attenuating ultrasonic vibration.

  Although the cavitation is crushed by the ultrasonic generator 61a, the vibration damping device 61c is provided at a position closest to the processing surface W1 of the supply nozzle 61. Effective vibration is suppressed. By this effect, cavitation collapse can be concentrated inside the supply nozzle 61 (nozzle body 61b) without being generated in the vicinity of the surface to be processed W1. Therefore, it is possible to prevent the ultrasonic vibration from being directly transmitted to the surface to be processed W1 and avoid the destruction of the fine structure on the surface to be processed W1, and the OH radicals generated by the collapse of cavitation can be prevented. The processing liquid containing can be supplied on the to-be-processed surface W1 (refer FIG. 6).

  Further, by providing the vibration attenuating device 61c, ultrasonic vibrations are transmitted from the ultrasonic generating device 61a to the vibration attenuating device 61c. As described later, the vibration attenuating device 61c is a porous member. If so, the vibration of the ultrasonic wave is diffusely reflected in the vibration attenuating device 61c (see the arrow pointing upward from the vibration attenuating device 61c in FIG. 6). Therefore, ultrasonic vibration is uniformly applied to the treatment liquid. Furthermore, since the nozzle body 61b is a so-called partitioned space between the ultrasonic generator 61a and the vibration damping device 61c, ultrasonic vibrations can be concentrated and applied to the processing liquid. These things greatly contribute to the generation of OH radicals.

  Here, a porous material can be used as the vibration damping device 61c. This porous material has a structure having many pores as a material, for example, silicon (Si), glass material, carbon material, polymer material, and the like.

  Moreover, the gas supplied from the gas supply unit 43 is mixed with the liquid supplied from the supply nozzle 61 to the surface to be processed W1, but it is also possible to dissolve a predetermined gas in the liquid in advance. Thus, by dissolving gas in the liquid, the amount of OH radicals generated can be controlled. Examples of the gas to be dissolved include hydrogen (H2), helium (He), nitrogen (N2), oxygen (O2), carbon dioxide (CO2), argon (Ar), ammonia (NH3), and the like.

  Furthermore, it can also be dissolved in the liquid so as to be supersaturated. In this case, for example, although not shown in FIG. 5, the gas is dissolved in the pressurized state to the atmospheric saturation concentration or higher in the dissolution tank, and the pressure release device (for example, the valve) is supplied before the supply to the supply nozzle 61. And the pressure is released through the orifice). Thereby, a large amount of bubbles are introduced into the liquid as the pressure is released.

  By adopting such a configuration, it becomes possible to introduce a large amount of bubbles into the liquid, and by using an ultrasonic generator and a vibration damping device, cavitation is crushed and OH radicals are generated abundantly. However, the vibration of the ultrasonic wave is not transmitted to the processing surface W1 by the vibration damping device. Accordingly, it is possible to supply a treatment liquid containing OH radicals in the vicinity of the substrate to be cleaned, and to effectively remove particles such as organic substances adhering to the substrate and the substrate processing. A method can be provided.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. For example, the liquid temperature when the liquid is supplied onto the surface to be processed can be supplied at a temperature lower than the temperature in the processing chamber (processing box). Such a low-temperature liquid can contain a larger amount of dissolved gas in the liquid than a high-temperature liquid, and a large amount of OH radicals can be supplied by using a low-temperature liquid.

  Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine the component covering different embodiment suitably.

DESCRIPTION OF SYMBOLS 1,31,51 ... Substrate processing apparatus, 2 ... Processing box, 3 ... Cup, 4 ... Holding table, 4a ... Holding member, 5 ... Rotating mechanism, 6 ... Moving mechanism, 11, 21, 41 ... 1st nozzle, DESCRIPTION OF SYMBOLS 11a ... Photocatalyst, 11b ... Holding member, 11c ... Light source, 12 ... 2nd nozzle, 22 ... Photocatalyst, 22a ... Titanium oxide, 22b ... Metal catalyst, 42 ... Liquid supply part, 43 ... Gas supply part, M ... Liquid film , W ... wafer, W1 ... surface to be processed.

Claims (11)

A first nozzle for cleaning a surface to be processed on a substrate to be processed;
A second nozzle for supplying a liquid onto the surface to be processed,
The first nozzle includes a photocatalyst that faces the surface to be processed and contacts the liquid, a holding member that holds the photocatalyst, and a light source that passes through the holding member and emits light to the photocatalyst. A substrate processing apparatus.   The substrate processing apparatus according to claim 1, wherein the photocatalyst includes a titanium oxide and a metal catalyst electrically connected to the titanium oxide.   The distance from the titanium oxide to the surface to be treated and the distance from the metal catalyst to the surface to be treated are arranged such that the former is shorter than the latter and close to the surface to be treated. The substrate processing apparatus according to claim 2.   4. The substrate processing apparatus according to claim 1, wherein the liquid supplied from the second nozzle is a liquid in which a gas is dissolved or a bubble.   5. The substrate processing apparatus according to claim 1, wherein the first nozzle includes a nozzle hole that ejects a liquid droplet by gas on the surface to be processed.   The substrate processing apparatus according to claim 1, wherein the first nozzle further includes an ultrasonic generator.   The temperature of the liquid supplied from the first nozzle and the temperature of the liquid supplied from the second nozzle are lower than the temperature in the processing chamber. A substrate processing apparatus according to claim 1. A nozzle that discharges and cleans a processing liquid onto a surface to be processed on a substrate to be processed;
An ultrasonic generator for applying ultrasonic waves to the treatment liquid;
An apparatus for attenuating vibration of the ultrasonic wave formed of a porous material provided at a position where the treatment liquid to which the ultrasonic wave is applied is discharged;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 8, wherein a gas is dissolved in the processing liquid. Holding and rotating the substrate to be processed;
Supplying a liquid from a second nozzle to the surface to be processed of the substrate;
The to-be-processed by a first nozzle comprising a photocatalyst facing the surface to be processed and contacting the liquid, a holding member for holding the photocatalyst, and a light source that passes through the holding member and irradiates the photocatalyst with light. Cleaning the surface;
A substrate processing method comprising: Holding and rotating the substrate to be processed;
Applying ultrasonic waves to the processing liquid discharged to the processing surface on the substrate;
Discharge the treatment liquid, the vibration of which is attenuated by a device for attenuating the vibration of the ultrasonic wave formed of a porous material provided at a position where the treatment liquid to which the ultrasonic wave is applied is discharged onto the surface to be processed. Cleaning process,
A substrate processing method characterized by comprising:

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