JP2011512655A5 - - Google Patents

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Publication number
JP2011512655A5
JP2011512655A5 JP2010546142A JP2010546142A JP2011512655A5 JP 2011512655 A5 JP2011512655 A5 JP 2011512655A5 JP 2010546142 A JP2010546142 A JP 2010546142A JP 2010546142 A JP2010546142 A JP 2010546142A JP 2011512655 A5 JP2011512655 A5 JP 2011512655A5
Authority
JP
Japan
Prior art keywords
processor
short pulse
power supply
ion
voltage power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010546142A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011512655A (ja
Filing date
Publication date
Priority claimed from US12/029,710 external-priority patent/US7586100B2/en
Application filed filed Critical
Publication of JP2011512655A publication Critical patent/JP2011512655A/ja
Publication of JP2011512655A5 publication Critical patent/JP2011512655A5/ja
Pending legal-status Critical Current

Links

JP2010546142A 2008-02-12 2009-02-12 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化 Pending JP2011512655A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/029,710 US7586100B2 (en) 2008-02-12 2008-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
PCT/US2009/033928 WO2009102871A2 (en) 2008-02-12 2009-02-12 Closed loop control and process optimization in plasma doping processes using a time of flight ion detector

Publications (2)

Publication Number Publication Date
JP2011512655A JP2011512655A (ja) 2011-04-21
JP2011512655A5 true JP2011512655A5 (cg-RX-API-DMAC7.html) 2012-03-01

Family

ID=40938101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546142A Pending JP2011512655A (ja) 2008-02-12 2009-02-12 飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化

Country Status (6)

Country Link
US (1) US7586100B2 (cg-RX-API-DMAC7.html)
JP (1) JP2011512655A (cg-RX-API-DMAC7.html)
KR (1) KR20100137445A (cg-RX-API-DMAC7.html)
CN (1) CN101978476B (cg-RX-API-DMAC7.html)
TW (1) TW200943366A (cg-RX-API-DMAC7.html)
WO (1) WO2009102871A2 (cg-RX-API-DMAC7.html)

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US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
TWI424796B (zh) * 2010-02-12 2014-01-21 Advanced Micro Fab Equip Inc Plasma processing device with diffusion dissociation region
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8728587B2 (en) * 2011-06-24 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Closed loop process control of plasma processed materials
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9295148B2 (en) * 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US8916056B2 (en) * 2012-10-11 2014-12-23 Varian Semiconductor Equipment Associates, Inc. Biasing system for a plasma processing apparatus
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US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9336998B2 (en) 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
JP6608585B2 (ja) * 2014-08-19 2019-11-20 株式会社アヤボ 粒子計測方法および装置
TWI574296B (zh) * 2014-12-04 2017-03-11 萬機科技股份有限公司 功率輸出產生系統與適用於週期性波形之方法
US10049857B2 (en) 2014-12-04 2018-08-14 Mks Instruments, Inc. Adaptive periodic waveform controller
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10553411B2 (en) * 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
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JPWO2021255784A1 (cg-RX-API-DMAC7.html) * 2020-06-15 2021-12-23
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