JP2011507238A - 少なくとも1つの光電子半導体素子を備えた装置 - Google Patents
少なくとも1つの光電子半導体素子を備えた装置 Download PDFInfo
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Abstract
Description
レンズは例えば光電子半導体素子から放射された光の出射角を所望の範囲に設定するために使用することができる。1つの実施形態では、この出射角は40°未満の範囲内にあり、例えば20°〜30°の範囲内としてよい。原則的に、適切な光学系を用いれば、ほぼ任意の出射角を定めることができる。
l604=l606−2*l603*tan(α/2) (1)
l605=l607−2*l603*tan(α/2) (2)
個々の装置はそれぞれ1つの光電子半導体素子を含んでいてよいが、例えば図4に示されているように、個々の装置が複数の光電子半導体素子を含んでいてもよい。各ハウジング体には、図3に示されているように、光学系が配置されていてよい。光学系は例えば10°〜30°の放射角を可能にするレンズである。
Claims (15)
- 少なくとも1つの光電子半導体素子(101)を備えた装置であって、
前記少なくとも1つの光電子半導体素子を支持するのに適した支持部材装置(108)と、吸光性プラスチックから形成されたハウジング体(103)とを含んでおり、前記支持部材装置は、前記少なくとも1つの光電子半導体素子(101)に接続された少なくとも1つの接続面(110)を有する表面(109)を有しており、前記ハウジング体は前記支持部材装置上に配置されており、少なくとも1つの隆起部(104)、少なくとも1つの後退部(105)および前記少なくとも1つの隆起部(104)と前記少なくとも1つの後退部(105)との間の傾斜面(115)を有しており、前記少なくとも1つの後退部(105)は前記少なくとも1つの光電子半導体素子まで達していることを特徴とする、少なくとも1つの光電子半導体素子(101)を備えた装置。 - 前記ハウジング体(103)は前記支持部材装置上に配置された少なくとも2つの分割された部分から成る、請求項1記載の装置。
- 前記吸光性プラスチックは黒色である、請求項1または2記載の装置。
- 前記隆起部は、前記少なくとも1つの光電子半導体素子(101)から放射される光の出射角(113)が140°以上となる高さ(106)および幅(107)を有している、請求項1から3のいずれか1項記載の装置。
- ボンディングワイヤ(102)と少なくとも1つの別の接続面(111)とを含んでおり、前記ボンディングワイヤは、前記少なくとも1つの別の接続面(111)に接続されており、前記少なくとも1つの光電子半導体素子(101)に対する電気接続を形成しており、前記ハウジング体の前記少なくとも1つの後退部(105)が前記少なくとも1つの別の接続面(111)まで達している、請求項1から4のいずれか1項記載の装置。
- 前記支持部材装置(108)に接続された少なくとも1つの電子素子(313)を含んでおり、該電子素子が前記ハウジング体(303)によって完全に囲まれている、請求項1から5のいずれか1項記載の装置。
- 前記少なくとも1つの隆起部(204)に配置された透光性のカバー(212)を含んでおり、該カバーが前記少なくとも1つの光電子半導体素子(201)を覆っている、請求項1から6のいずれか1項記載の装置。
- 前記透光性カバー(212)は前記装置外から来た光の反射を低減するために吸光物質を含んでいる、請求項7記載の装置。
- 前記透光性カバー(212)は前記装置外から来た光の反射を低減するために構造化された表面(214)を有している、請求項7または8記載の装置。
- 前記少なくとも1つの隆起部(304)に配置された透過光学系、とりわけレンズ(312)を含んでおり、前記透過光学系が前記少なくとも1つの光電子半導体素子(301)を覆っている、請求項1から6のいずれか1項記載の装置。
- 前記少なくとも1つの隆起部によって包囲された開口部の中に配置された透光性の充填物質(215)を含んでおり、該充填物質が前記少なくとも1つの光電子半導体素子(201)を包囲している、請求項1から10のいずれか1項記載の装置。
- 前記透光性充填物質(215)は前記少なくとも1つの光電子半導体素子(201)から放射された光を散乱させるために光拡散物質を含んでいる、請求項11記載の装置。
- 前記透光性充填物質(215)は前記装置外から来た光の反射を低減するために吸光物質を含んでいる、請求項11または12記載の装置。
- 前記吸光物質はカーボンブラックおよび/またはグラファイトを含んでいる、請求項8または13記載の装置。
- 前記装置を平面上に載置するための第1の面と、前記少なくとも1つの接続面(110)を載せた、前記少なくとも1つの光電子半導体素子(101)に接続された、前記第1の面から距離をおいた第2の面と、前記ハウジング体(103)の前記後退部(105)の上面によって決まる、前記第1の面から距離をおいた第3の面と、前記ハウジング体(103)の前記隆起部(106)まで達する、前記第1の面からさらに距離をおいた第4の面を有している、請求項1から14のいずれか1項記載の装置。
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Application Number | Priority Date | Filing Date | Title |
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DE102007060206.7 | 2007-12-14 | ||
DE102007060206A DE102007060206A1 (de) | 2007-12-14 | 2007-12-14 | Anordnung mit mindestens einem optoelektronischen Halbleiterbauelement |
PCT/DE2008/001911 WO2009076922A1 (de) | 2007-12-14 | 2008-11-19 | Anordnung mit mindestens einem optoelektronischen halbleiterbauelement |
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JP2011507238A true JP2011507238A (ja) | 2011-03-03 |
JP5804705B2 JP5804705B2 (ja) | 2015-11-04 |
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JP2010537246A Expired - Fee Related JP5804705B2 (ja) | 2007-12-14 | 2008-11-19 | 少なくとも1つの光電子半導体素子を備えた装置 |
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US (1) | US8994047B2 (ja) |
EP (1) | EP2218118B1 (ja) |
JP (1) | JP5804705B2 (ja) |
KR (1) | KR101529745B1 (ja) |
CN (1) | CN101897043A (ja) |
DE (1) | DE102007060206A1 (ja) |
TW (1) | TWI431805B (ja) |
WO (1) | WO2009076922A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013125867A (ja) * | 2011-12-14 | 2013-06-24 | Shin Etsu Chem Co Ltd | 光学半導体装置用基台及びその製造方法、並びに光学半導体装置 |
JP2015111626A (ja) * | 2013-12-06 | 2015-06-18 | シャープ株式会社 | 発光装置およびその製造方法 |
JP2018029183A (ja) * | 2013-04-17 | 2018-02-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品およびその製造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010012602B4 (de) * | 2010-03-24 | 2023-02-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauteil sowie Anzeigevorrichtung und Herstellungsverfahren |
JP5535750B2 (ja) * | 2010-04-30 | 2014-07-02 | ローム株式会社 | 発光素子モジュール |
DE102010029368A1 (de) | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung |
DE102010046254A1 (de) * | 2010-09-22 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
KR101950756B1 (ko) * | 2011-10-11 | 2019-02-21 | 엘지이노텍 주식회사 | 발광소자 패키지 |
DE102013212393A1 (de) * | 2013-06-27 | 2014-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
KR102034715B1 (ko) | 2015-07-16 | 2019-10-22 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
DE102018124528A1 (de) * | 2018-10-04 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronische Leuchtvorrichtung, Trägerplatte und Verfahren zur Herstellung einer optoelektronischen Leuchtvorrichtungen |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0550754U (ja) * | 1991-12-09 | 1993-07-02 | シャープ株式会社 | 発光装置 |
JPH08287719A (ja) * | 1995-04-10 | 1996-11-01 | Copal Co Ltd | 発光装置 |
JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
JPH10284759A (ja) * | 1997-04-10 | 1998-10-23 | Nichia Chem Ind Ltd | 発光装置及びそれを用いた表示装置 |
JP2001210840A (ja) * | 2000-01-24 | 2001-08-03 | Sharp Corp | 受光素子および半導体レーザ装置 |
JP2002223005A (ja) * | 2001-01-26 | 2002-08-09 | Toyoda Gosei Co Ltd | 発光ダイオード及びディスプレイ装置 |
JP2002232014A (ja) * | 2001-02-05 | 2002-08-16 | Seiwa Electric Mfg Co Ltd | 発光ダイオードランプ |
JP2003086846A (ja) * | 2000-07-21 | 2003-03-20 | Nichia Chem Ind Ltd | 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法 |
JP2007227882A (ja) * | 2006-02-23 | 2007-09-06 | Novalite Optronics Corp | 発光ダイオードパッケージとその製造方法 |
JP2007324330A (ja) * | 2006-05-31 | 2007-12-13 | Sanyo Electric Co Ltd | 回路基板 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3177661B2 (ja) | 1991-08-21 | 2001-06-18 | パイロットインキ株式会社 | 変色具 |
KR0125137B1 (ko) * | 1993-10-14 | 1997-12-01 | 미타라이 하지메 | 밀착형 이미지센서 |
DE19829197C2 (de) * | 1998-06-30 | 2002-06-20 | Siemens Ag | Strahlungsaussendendes und/oder -empfangendes Bauelement |
DE10241989A1 (de) * | 2001-11-30 | 2003-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE10229067B4 (de) | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
JP4118742B2 (ja) * | 2002-07-17 | 2008-07-16 | シャープ株式会社 | 発光ダイオードランプおよび発光ダイオード表示装置 |
JP4504662B2 (ja) * | 2003-04-09 | 2010-07-14 | シチズン電子株式会社 | Ledランプ |
JP4645071B2 (ja) * | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | パッケージ成型体およびそれを用いた半導体装置 |
JP4480407B2 (ja) | 2004-01-29 | 2010-06-16 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
US20060006793A1 (en) * | 2004-07-12 | 2006-01-12 | Baroky Tajul A | Deep ultraviolet used to produce white light |
DE102004045950A1 (de) * | 2004-09-22 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
JP2006216887A (ja) | 2005-02-07 | 2006-08-17 | Citizen Electronics Co Ltd | オプトデバイス |
KR20070000638A (ko) | 2005-06-28 | 2007-01-03 | 삼성전기주식회사 | 고휘도 발광 다이오드 소자 및 그 제조방법 |
DE102005041064B4 (de) | 2005-08-30 | 2023-01-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
DE102006004397A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
KR100637476B1 (ko) * | 2005-11-09 | 2006-10-23 | 알티전자 주식회사 | 측면발광 다이오드 및 그 제조방법 |
CN101030572A (zh) | 2006-03-01 | 2007-09-05 | 瑞莹光电股份有限公司 | 发光二极管封装及其制造方法 |
DE102006059994A1 (de) * | 2006-12-19 | 2008-06-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
DE102007001706A1 (de) | 2007-01-11 | 2008-07-17 | Osram Opto Semiconductors Gmbh | Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse |
US8716848B2 (en) * | 2008-03-24 | 2014-05-06 | SemiLEDs Optoelectronics Co., Ltd. | LED device with conductive wings and tabs |
-
2007
- 2007-12-14 DE DE102007060206A patent/DE102007060206A1/de not_active Withdrawn
-
2008
- 2008-11-19 WO PCT/DE2008/001911 patent/WO2009076922A1/de active Application Filing
- 2008-11-19 KR KR1020107015624A patent/KR101529745B1/ko active IP Right Grant
- 2008-11-19 US US12/808,165 patent/US8994047B2/en not_active Expired - Fee Related
- 2008-11-19 CN CN2008801203843A patent/CN101897043A/zh active Pending
- 2008-11-19 EP EP08861500.0A patent/EP2218118B1/de not_active Not-in-force
- 2008-11-19 JP JP2010537246A patent/JP5804705B2/ja not_active Expired - Fee Related
- 2008-12-02 TW TW097146826A patent/TWI431805B/zh not_active IP Right Cessation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0550754U (ja) * | 1991-12-09 | 1993-07-02 | シャープ株式会社 | 発光装置 |
JPH08287719A (ja) * | 1995-04-10 | 1996-11-01 | Copal Co Ltd | 発光装置 |
JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
JPH10284759A (ja) * | 1997-04-10 | 1998-10-23 | Nichia Chem Ind Ltd | 発光装置及びそれを用いた表示装置 |
JP2001210840A (ja) * | 2000-01-24 | 2001-08-03 | Sharp Corp | 受光素子および半導体レーザ装置 |
JP2003086846A (ja) * | 2000-07-21 | 2003-03-20 | Nichia Chem Ind Ltd | 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法 |
JP2002223005A (ja) * | 2001-01-26 | 2002-08-09 | Toyoda Gosei Co Ltd | 発光ダイオード及びディスプレイ装置 |
JP2002232014A (ja) * | 2001-02-05 | 2002-08-16 | Seiwa Electric Mfg Co Ltd | 発光ダイオードランプ |
JP2007227882A (ja) * | 2006-02-23 | 2007-09-06 | Novalite Optronics Corp | 発光ダイオードパッケージとその製造方法 |
JP2007324330A (ja) * | 2006-05-31 | 2007-12-13 | Sanyo Electric Co Ltd | 回路基板 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013125867A (ja) * | 2011-12-14 | 2013-06-24 | Shin Etsu Chem Co Ltd | 光学半導体装置用基台及びその製造方法、並びに光学半導体装置 |
JP2018029183A (ja) * | 2013-04-17 | 2018-02-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品およびその製造方法 |
JP2015111626A (ja) * | 2013-12-06 | 2015-06-18 | シャープ株式会社 | 発光装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2218118A1 (de) | 2010-08-18 |
KR101529745B1 (ko) | 2015-06-17 |
TW200926463A (en) | 2009-06-16 |
JP5804705B2 (ja) | 2015-11-04 |
DE102007060206A1 (de) | 2009-06-18 |
EP2218118B1 (de) | 2018-05-30 |
TWI431805B (zh) | 2014-03-21 |
CN101897043A (zh) | 2010-11-24 |
KR20100103587A (ko) | 2010-09-27 |
US8994047B2 (en) | 2015-03-31 |
WO2009076922A1 (de) | 2009-06-25 |
US20110121336A1 (en) | 2011-05-26 |
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