JP2011506960A - 光学的特性を用いたセンサ応用のための基板製造方法およびそれによる基板 - Google Patents
光学的特性を用いたセンサ応用のための基板製造方法およびそれによる基板 Download PDFInfo
- Publication number
- JP2011506960A JP2011506960A JP2010537842A JP2010537842A JP2011506960A JP 2011506960 A JP2011506960 A JP 2011506960A JP 2010537842 A JP2010537842 A JP 2010537842A JP 2010537842 A JP2010537842 A JP 2010537842A JP 2011506960 A JP2011506960 A JP 2011506960A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silica particles
- producing
- sensor substrate
- nanoparticles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 230000003287 optical effect Effects 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 96
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000002105 nanoparticle Substances 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims abstract description 34
- 239000006185 dispersion Substances 0.000 claims abstract description 22
- 239000002356 single layer Substances 0.000 claims abstract description 22
- 239000003960 organic solvent Substances 0.000 claims abstract description 20
- 239000002086 nanomaterial Substances 0.000 claims abstract description 18
- 125000000524 functional group Chemical group 0.000 claims abstract description 17
- 238000004458 analytical method Methods 0.000 claims abstract description 9
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 136
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 58
- 229910052737 gold Inorganic materials 0.000 claims description 51
- 239000010931 gold Substances 0.000 claims description 51
- 239000002245 particle Substances 0.000 claims description 43
- 239000000377 silicon dioxide Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical group ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 18
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 15
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 6
- 239000002120 nanofilm Substances 0.000 claims description 6
- 238000001338 self-assembly Methods 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 3
- 238000005119 centrifugation Methods 0.000 claims description 3
- 239000006228 supernatant Substances 0.000 claims description 3
- 230000003100 immobilizing effect Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 239000007787 solid Substances 0.000 abstract description 6
- 239000000243 solution Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012153 distilled water Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 4
- FPQQSJJWHUJYPU-UHFFFAOYSA-N 3-(dimethylamino)propyliminomethylidene-ethylazanium;chloride Chemical compound Cl.CCN=C=NCCCN(C)C FPQQSJJWHUJYPU-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- NQTADLQHYWFPDB-UHFFFAOYSA-N N-Hydroxysuccinimide Chemical compound ON1C(=O)CCC1=O NQTADLQHYWFPDB-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000803 convective self-assembly Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000000054 nanosphere lithography Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
- G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24372—Particulate matter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Silicon Compounds (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
Claims (17)
- 分析用センサ基板の製造方法であって、該方法が、
(a)ナノ粒子を有機官能基で表面改質し、そのように表面改質されたナノ粒子を揮発性有機溶媒に分散させることによって、ナノ粒子の分散溶液を調製する工程、
(b)該ナノ粒子の分散溶液を用いて、ラングミュア−ブロジェット法に基づいて、該有機官能基で表面改質されたナノ粒子の単層膜を調製し、次いで該ナノ粒子の単層膜を基板上に転移させる工程、および
(c)該ナノ粒子の単層膜が転移された基板を真空蒸着法によって金属薄膜でコーティングする工程
を含むことを特徴とする、方法。 - 真空蒸着法によって金属薄膜でコーティングする工程の後、ナノ粒子を除去する工程をさらに含むことを特徴とする、請求項1に記載の分析用センサ基板の製造方法。
- 前記ナノ粒子がシリカ粒子であることを特徴とする、請求項1または2に記載の分析用センサ基板の製造方法。
- 前記有機官能基がチオール基であることを特徴とする、請求項1または2に記載の分析用センサ基板の製造方法。
- 前記有機溶媒がクロロホルムであることを特徴とする、請求項1または2に記載の分析用センサ基板の製造方法。
- 前記金属薄膜が金薄膜であることを特徴とする、請求項1または2に記載の分析用センサ基板の製造方法。
- 前記真空蒸着法が電子ビーム蒸着法であることを特徴とする、請求項1または2に記載の分析用センサ基板の製造方法。
- 前記工程(a)のシリカ粒子が、触媒としてアンモニア水を用いて、ケイ素を含む有機分子であるオルトケイ酸テトラエチル(TEOS)の自己組立によって調製されることを特徴とする、請求項3に記載の分析用センサ基板の製造方法。
- 前記工程(a)が、
(a−1)触媒としてアンモニア水を用いて、ケイ素を含む有機分子であるオルトケイ酸テトラエチル(TEOS)の自己組立によってシリカ粒子を調製する工程;および
(a−2)該工程(a−1)で調製されたシリカ粒子を遠心分離機で遠心分離し、該粒子を浸漬し、上清を捨て、次いで相転移温度を上回る特定温度でベーキング時間該粒子を乾燥して、シリカ粒子を調製する工程;
(a−3)EDC/NHS物質と、アミン基およびチオール基を有する物質としてアミノベンゾチオール(ABT)とを、超音波を加えながら反応させることにより、ABTをシリカ粒子の表面上に固定し、ABTが固定されたシリカ粒子の分散溶液を調製する工程;および
(a−4)該工程(a−3)で調製されたABTが固定されたシリカ粒子の分散溶液を遠心分離手順によってエタノールおよびクロロホルムで洗浄し、ラングミュア−ブロジェット法に用いられる溶液を調製することによって、シリカ粒子を表面改質させる工程
を含むことを特徴とする、請求項1に記載の分析用センサ基板の製造方法。 - 前記工程(b)が、
(b−1)有機官能基を有する有機分子で表面が改質され、そして有機溶媒に分散されたシリカナノ粒子の分散溶液を、水面上に散布する工程;
(b−2)該水面上にバリアを置き、シリカ粒子を集めて薄膜形態とする工程;および
(b−3)該薄膜形態のシリカ粒子を金基板に転移する工程
を含むことを特徴とする、請求項1に記載の分析用センサ基板の製造方法。 - 前記バリアに加えられる転移圧力が35〜45mN/mであることを特徴とする、請求項10に記載の分析用センサ基板の製造方法。
- 前記ナノ粒子がシリカ粒子であることを特徴とする、請求項9に記載の分析用センサ基板の製造方法。
- 前記有機官能基がチオール基であることを特徴とする、請求項9に記載の分析用センサ基板の製造方法。
- 前記有機溶媒がクロロホルムであることを特徴とする、請求項9に記載の分析用センサ基板の製造方法。
- 請求項1から14のいずれかに記載の分析用センサ基板の製造方法によって調製されたナノ膜。
- 請求項1から14のいずれかに記載の分析用センサ基板の製造方法によって調製されたナノ膜を用いて調製されたナノ構造物。
- 請求項1から14のいずれかに記載の分析用センサ基板の製造方法によって調製された表面プラズモン共鳴測定用基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0128476 | 2007-12-11 | ||
KR1020070128476A KR100942506B1 (ko) | 2007-12-11 | 2007-12-11 | 광학적 특성을 이용한 분석용 센서를 위한 기판 제조 방법및 그 기판 |
PCT/KR2008/006263 WO2009075471A1 (en) | 2007-12-11 | 2008-10-23 | Substrate manufacturing method for sensor applications using optical characteristics and the substrate therefrom |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011506960A true JP2011506960A (ja) | 2011-03-03 |
JP5162673B2 JP5162673B2 (ja) | 2013-03-13 |
Family
ID=40755678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010537842A Expired - Fee Related JP5162673B2 (ja) | 2007-12-11 | 2008-10-23 | 光学的特性を用いたセンサ応用のための基板製造方法およびそれによる基板 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8414965B2 (ja) |
EP (1) | EP2220698B1 (ja) |
JP (1) | JP5162673B2 (ja) |
KR (1) | KR100942506B1 (ja) |
CN (1) | CN101919080B (ja) |
WO (1) | WO2009075471A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104880452B (zh) * | 2010-09-06 | 2018-04-10 | 米特奇有限公司 | 金属络合物量子晶体的制造方法 |
KR101360086B1 (ko) * | 2012-01-10 | 2014-02-12 | 한국과학기술원 | 레이저 조사를 이용한 나노패턴의 형성방법 및 이에 따라 형성되는 나노패턴 |
CN103361601B (zh) * | 2013-05-22 | 2015-11-25 | 南开大学 | 一种制作表面增强拉曼散射基底的方法 |
CN103465576B (zh) * | 2013-09-18 | 2016-01-20 | 电子科技大学 | 一种高介电复合薄膜及其制备方法 |
CN104020185B (zh) * | 2014-06-18 | 2016-09-21 | 东南大学 | 一种高分子超薄膜相转变温度的测定方法 |
KR101592552B1 (ko) * | 2014-06-20 | 2016-02-11 | 아주대학교산학협력단 | 음각 구조의 금속 박막 기판 및 그 제조방법 |
CN107065661B (zh) * | 2017-03-27 | 2019-05-21 | 上海师范大学 | 一种用于提取气-液界面膜的设备 |
CN108676518A (zh) * | 2018-08-28 | 2018-10-19 | 上海市同济医院 | 一种选择性波点位防蓝光薄膜 |
CN114216876B (zh) * | 2021-08-23 | 2023-08-11 | 南开大学 | 一种表面增强红外基底制备及纳米柱阵列偏离角检测方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005144569A (ja) * | 2003-11-12 | 2005-06-09 | Hitachi Ltd | 二次元配列構造体基板および該基板から剥離した微粒子 |
JP2007500606A (ja) * | 2003-07-28 | 2007-01-18 | ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニア | ラングミュア−ブロジェットナノ構造体単層 |
JP2007149155A (ja) * | 2005-11-24 | 2007-06-14 | Hitachi Ltd | 磁気記録媒体、その作製方法、及び磁気ディスク装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3855073T2 (de) * | 1987-12-21 | 1996-10-02 | Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka | Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern |
KR100524702B1 (ko) * | 2002-10-18 | 2005-10-31 | 한국화학연구원 | 자기 조립 박막의 제조방법 |
KR100563855B1 (ko) * | 2003-09-17 | 2006-03-23 | 한국기계연구원 | 나노패턴 구조물 |
US7189768B2 (en) * | 2003-11-25 | 2007-03-13 | 3M Innovative Properties Company | Solution containing surface-modified nanoparticles |
US7202541B2 (en) * | 2004-04-29 | 2007-04-10 | Hewlett-Packard Development Company, L.P. | Apparatus and method for transverse characterization of materials |
US7242470B2 (en) * | 2004-07-23 | 2007-07-10 | University Of Maryland At Baltimore County | Multilayered surface-enhanced Raman scattering substrates |
KR100675334B1 (ko) * | 2005-02-19 | 2007-01-29 | 한국기계연구원 | 탄소나노튜브 필름 및 그 제조 방법 |
CN100386471C (zh) * | 2005-09-07 | 2008-05-07 | 清华大学 | 一种离子注入表面改性控制碳纳米管生长的方法 |
US20070235348A1 (en) * | 2006-04-07 | 2007-10-11 | Nagahara Larry A | Conducting polymer nanosensor |
-
2007
- 2007-12-11 KR KR1020070128476A patent/KR100942506B1/ko not_active IP Right Cessation
-
2008
- 2008-10-23 WO PCT/KR2008/006263 patent/WO2009075471A1/en active Application Filing
- 2008-10-23 JP JP2010537842A patent/JP5162673B2/ja not_active Expired - Fee Related
- 2008-10-23 EP EP08859350.4A patent/EP2220698B1/en not_active Not-in-force
- 2008-10-23 US US12/741,389 patent/US8414965B2/en active Active
- 2008-10-23 CN CN2008801204263A patent/CN101919080B/zh not_active Expired - Fee Related
-
2013
- 2013-03-08 US US13/790,283 patent/US20130260159A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007500606A (ja) * | 2003-07-28 | 2007-01-18 | ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニア | ラングミュア−ブロジェットナノ構造体単層 |
JP2005144569A (ja) * | 2003-11-12 | 2005-06-09 | Hitachi Ltd | 二次元配列構造体基板および該基板から剥離した微粒子 |
JP2007149155A (ja) * | 2005-11-24 | 2007-06-14 | Hitachi Ltd | 磁気記録媒体、その作製方法、及び磁気ディスク装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100942506B1 (ko) | 2010-02-12 |
JP5162673B2 (ja) | 2013-03-13 |
KR20090061455A (ko) | 2009-06-16 |
EP2220698B1 (en) | 2016-11-23 |
CN101919080B (zh) | 2012-09-26 |
WO2009075471A1 (en) | 2009-06-18 |
US20130260159A1 (en) | 2013-10-03 |
US20100239464A1 (en) | 2010-09-23 |
EP2220698A1 (en) | 2010-08-25 |
US8414965B2 (en) | 2013-04-09 |
CN101919080A (zh) | 2010-12-15 |
EP2220698A4 (en) | 2014-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5162673B2 (ja) | 光学的特性を用いたセンサ応用のための基板製造方法およびそれによる基板 | |
He et al. | Oblique angle deposition and its applications in plasmonics | |
KR100892629B1 (ko) | 표면 증강 라만 분광용 광 센서 | |
WO2019146692A1 (ja) | 分析用基板 | |
Zhu et al. | Monolayer arrays of nanoparticles on block copolymer brush films | |
Banchelli et al. | Controlled graphene oxide assembly on silver nanocube monolayers for SERS detection: dependence on nanocube packing procedure | |
Lee et al. | Hierarchical nanoflowers on nanograss structure for a non-wettable surface and a SERS substrate | |
Mu et al. | Au nanoring arrays with tunable morphological features and plasmonic resonances | |
Suchomel et al. | Highly efficient silver particle layers on glass substrate synthesized by the sonochemical method for surface enhanced Raman spectroscopy purposes | |
WO2012104534A1 (fr) | Procede de fabrication de nanoparticules metalliques | |
Tiu et al. | Plasmonics and templated systems for bioapplications | |
KR20130011338A (ko) | Dna 혼성화 결합 감지 센서, 및 그의 제조 방법 | |
WO2019146700A1 (ja) | 分析用基板およびその製造方法 | |
US10895013B2 (en) | Gold nanostructures and processes for their preparation | |
Smith et al. | Guided assembly of two-dimensional arrays of gold nanoparticles on a polycrystalline gold electrode for electrochemical surface-enhanced Raman spectroscopy | |
KR20110097027A (ko) | 고집적 나노패턴 형태의 금속 나노구조체의 제조방법 및 이에 의해 제조된 금속 나노구조체 | |
Kandulski | Shadow nanosphere lithography | |
Fragal et al. | Water droplet self-assembly to au Nanoporous films with special light trapping and surface electromagnetic field enhancement | |
Jégat et al. | Patterning Gold Nanorod Assemblies by Deep-UV Lithography | |
JP4900550B2 (ja) | 表面非修飾金属ナノ微粒子の単層アレイ構造体の作製法 | |
Song | Controlled fabrication of noble metal nanomaterials via nanosphere lithography and their optical properties | |
Sim et al. | Two-dimensional arrays of gold nanoparticles for plasmonic nanosensor | |
Matsui et al. | Preparation of organic–ceramic–metal multihybrid particles and their organized assembly | |
Tahghighi | Fabricating ultrasensitive metal nano-structures with Langmuir-Blodgett technique to improve plasmonic response of SERS | |
Tjio | Electroless deposition of plasmonic nanostructures on star polymer templates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120321 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120607 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121211 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121217 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5162673 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151221 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |