KR101360086B1 - 레이저 조사를 이용한 나노패턴의 형성방법 및 이에 따라 형성되는 나노패턴 - Google Patents
레이저 조사를 이용한 나노패턴의 형성방법 및 이에 따라 형성되는 나노패턴 Download PDFInfo
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- 239000002105 nanoparticle Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000001035 drying Methods 0.000 claims abstract description 27
- 230000001678 irradiating effect Effects 0.000 claims abstract description 21
- 239000006185 dispersion Substances 0.000 claims abstract description 18
- 238000004140 cleaning Methods 0.000 claims abstract description 11
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 17
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 15
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 15
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 8
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 6
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- -1 BaSO 4 Chemical compound 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 claims description 3
- BWOROQSFKKODDR-UHFFFAOYSA-N oxobismuth;hydrochloride Chemical compound Cl.[Bi]=O BWOROQSFKKODDR-UHFFFAOYSA-N 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
- ZQBVUULQVWCGDQ-UHFFFAOYSA-N propan-1-ol;propan-2-ol Chemical compound CCCO.CC(C)O ZQBVUULQVWCGDQ-UHFFFAOYSA-N 0.000 claims 1
- YGSFNCRAZOCNDJ-UHFFFAOYSA-N propan-2-one Chemical compound CC(C)=O.CC(C)=O YGSFNCRAZOCNDJ-UHFFFAOYSA-N 0.000 claims 1
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 3
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- 239000002086 nanomaterial Substances 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- MZNDIOURMFYZLE-UHFFFAOYSA-N butan-1-ol Chemical compound CCCCO.CCCCO MZNDIOURMFYZLE-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
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- 101100190615 Mus musculus Plcd1 gene Proteins 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B1/005—Constitution or structural means for improving the physical properties of a device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
도 4는 나노입자가 도포된 기판의 표면 및 나노입자의 배열모습을 개략적으로 나타낸 그림이고;
도 5는 나노입자로 레이저를 조사하여 나노입자가 기판에 융착되는 것을 개략적으로 나타낸 그림이고;
도 6 및 도 7은 본 발명에 따른 나노패턴 형성방법에 의해 형성된 나노패턴을 개략적으로 나타낸 그림이고;
도 8 및 도 9는 기판 상에 도포된 나노입자들을 주사전자현미경으로 관찰한 사진이다.
Claims (15)
- 나노입자 분산액을 이용하여 나노입자를 기판상에 도포하되, 상기 나노입자는 TiO2, SiO2, MnO2, Fe2O3, ATO(Antimony Tin Oxide), BaSO4, BiOCl, CaCO3, Ca3(PO4)2, Co0.5Zn0.5Fe2O4, FePO4, ITO(Indium Tin Oxide), Li2MoO4, MoO3, WO3, Y2Eu2O3, YBa2Cu3O(7-x), YSZ(Yttria-Stabilized Zirconia) 및 ZnO 를 포함하는 군으로부터 선택되는 1종 이상이고, 상기 도포는 랭뮤어-블로젯(Langmuir-Blogett) 방법으로 수행되는 단계(단계 1);
상기 단계 1에서 나노입자가 도포된 기판을 건조시키는 단계(단계 2);
상기 단계 2에서 건조가 수행된 기판에 소정의 패턴영역을 따라 레이저를 조사하는 단계(단계 3); 및
상기 단계 3에서 레이저가 조사된 기판을 세척하는 단계(단계 4);를 포함하는 반사 방지용 나노패턴의 형성방법.
- 제1항에 있어서, 상기 단계 1의 나노입자 분산액은 휘발성 유기용매에 나노입자를 분산시켜 제조되는 것을 특징으로 하는 반사 방지용 나노패턴의 형성방법.
- 제2항에 있어서, 상기 휘발성 유기용매는 이소프로판올(Isopropanol), 1-부탄올(1-butanol), 톨루엔(toluene), 디클로로메탄(Dichloromethane), 테트라하이드로퓨란(Tetrahydrofuran, THF), 2-프로판올(2-propanol), 아세톤(Acetone) 및 디메틸포름아미드(dimethyformamide)를 포함하는 군으로부터 선택되는 1종 또는 이들의 혼합물인 것을 특징으로 하는 반사 방지용 나노패턴의 형성방법.
- 삭제
- 제1항에 있어서, 상기 단계 1의 기판의 재질은 SiO2, TiO2, ZnO, 유리, 실리콘 웨이퍼, 폴리이미드, 폴리에틸렌테레프탈레이트 및 폴리카보네이트를 포함하는 군으로부터 선택되는 1종인 것을 특징으로 하는 반사 방지용 나노패턴의 형성방법.
- 삭제
- 제1항에 있어서, 상기 단계 3의 레이저는 나노입자가 가지는 밴드갭보다 낮은 파장을 가지는 것을 특징으로 하는 반사 방지용 나노패턴의 형성방법.
- 제1항에 있어서, 상기 단계 4의 세척은 세척용액 내에서 초음파를 가하여 수행되는 것을 특징으로 하는 반사 방지용 나노패턴의 형성방법.
- 삭제
- 삭제
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- 삭제
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KR1020120002942A KR101360086B1 (ko) | 2012-01-10 | 2012-01-10 | 레이저 조사를 이용한 나노패턴의 형성방법 및 이에 따라 형성되는 나노패턴 |
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KR1020120002942A KR101360086B1 (ko) | 2012-01-10 | 2012-01-10 | 레이저 조사를 이용한 나노패턴의 형성방법 및 이에 따라 형성되는 나노패턴 |
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KR20130081870A KR20130081870A (ko) | 2013-07-18 |
KR101360086B1 true KR101360086B1 (ko) | 2014-02-12 |
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KR102181868B1 (ko) * | 2020-06-24 | 2020-11-23 | 국민대학교산학협력단 | 와이어의 표면에 미세 패턴을 형성하는 방법 |
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KR20060086513A (ko) * | 2005-01-26 | 2006-08-01 | 한국과학기술원 | 단분산 입자를 마스크로 이용하는 자성금속 점 정렬형성방법 |
KR20090061455A (ko) * | 2007-12-11 | 2009-06-16 | 한국식품연구원 | 광학적 특성을 이용한 분석용 센서를 위한 기판 제조 방법및 그 기판 |
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KR20060086513A (ko) * | 2005-01-26 | 2006-08-01 | 한국과학기술원 | 단분산 입자를 마스크로 이용하는 자성금속 점 정렬형성방법 |
KR20090061455A (ko) * | 2007-12-11 | 2009-06-16 | 한국식품연구원 | 광학적 특성을 이용한 분석용 센서를 위한 기판 제조 방법및 그 기판 |
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