JP2011502362A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011502362A5 JP2011502362A5 JP2010532097A JP2010532097A JP2011502362A5 JP 2011502362 A5 JP2011502362 A5 JP 2011502362A5 JP 2010532097 A JP2010532097 A JP 2010532097A JP 2010532097 A JP2010532097 A JP 2010532097A JP 2011502362 A5 JP2011502362 A5 JP 2011502362A5
- Authority
- JP
- Japan
- Prior art keywords
- hydraulic fluid
- wafer
- fluid according
- dielectric material
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000012530 fluid Substances 0.000 claims 11
- 239000003989 dielectric material Substances 0.000 claims 5
- 229940024606 amino acid Drugs 0.000 claims 4
- 235000001014 amino acid Nutrition 0.000 claims 4
- 150000001413 amino acids Chemical class 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 239000004094 surface-active agent Substances 0.000 claims 3
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229920002125 Sokalan® Polymers 0.000 claims 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 2
- 239000008139 complexing agent Substances 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000002736 nonionic surfactant Substances 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 239000004584 polyacrylic acid Substances 0.000 claims 2
- 239000005518 polymer electrolyte Substances 0.000 claims 2
- 229960002429 proline Drugs 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 239000004475 Arginine Substances 0.000 claims 1
- 108010016626 Dipeptides Proteins 0.000 claims 1
- 239000004471 Glycine Substances 0.000 claims 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims 1
- AHLPHDHHMVZTML-BYPYZUCNSA-N L-Ornithine Chemical compound NCCC[C@H](N)C(O)=O AHLPHDHHMVZTML-BYPYZUCNSA-N 0.000 claims 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims 1
- 229930182821 L-proline Natural products 0.000 claims 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims 1
- 239000004472 Lysine Substances 0.000 claims 1
- AHLPHDHHMVZTML-UHFFFAOYSA-N Orn-delta-NH2 Natural products NCCCC(N)C(O)=O AHLPHDHHMVZTML-UHFFFAOYSA-N 0.000 claims 1
- UTJLXEIPEHZYQJ-UHFFFAOYSA-N Ornithine Natural products OC(=O)C(C)CCCN UTJLXEIPEHZYQJ-UHFFFAOYSA-N 0.000 claims 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims 1
- -1 acetylene primary alcohol Chemical class 0.000 claims 1
- 235000004279 alanine Nutrition 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims 1
- 239000011230 binding agent Substances 0.000 claims 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims 1
- 235000018417 cysteine Nutrition 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 229960003104 ornithine Drugs 0.000 claims 1
- 229920000867 polyelectrolyte Polymers 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98421707P | 2007-10-31 | 2007-10-31 | |
| PCT/US2008/074199 WO2009058463A1 (en) | 2007-10-31 | 2008-08-25 | Composition, method and process for polishing a wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011502362A JP2011502362A (ja) | 2011-01-20 |
| JP2011502362A5 true JP2011502362A5 (enrdf_load_stackoverflow) | 2011-10-13 |
Family
ID=40591398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010532097A Withdrawn JP2011502362A (ja) | 2007-10-31 | 2008-08-25 | ウエハを研磨するための組成物、方法及びプロセス |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
| JP5464055B2 (ja) * | 2009-06-02 | 2014-04-09 | 日信化学工業株式会社 | 水性切削液及び水性切削剤 |
| CN102437183B (zh) * | 2010-09-29 | 2015-02-25 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| KR20150058302A (ko) * | 2012-09-21 | 2015-05-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 개선된 cmp 성능을 위한 고정 연마 웹으로의 첨가제의 혼입 |
| JP6204029B2 (ja) | 2013-03-06 | 2017-09-27 | 出光興産株式会社 | 水性加工液 |
| KR102251921B1 (ko) * | 2019-10-02 | 2021-05-17 | 주식회사 케이씨텍 | 표면처리 조성물 및 그것을 이용한 표면처리 방법 |
| KR102358801B1 (ko) * | 2019-12-27 | 2022-02-08 | 주식회사 케이씨텍 | 표면 처리 조성물 및 이를 이용한 표면 처리 방법 |
| CN118617296A (zh) * | 2023-03-03 | 2024-09-10 | 长鑫存储技术有限公司 | 一种半导体结构的制备方法及半导体结构 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5152917B1 (en) * | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
| US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
| US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
| US6294470B1 (en) * | 1999-12-22 | 2001-09-25 | International Business Machines Corporation | Slurry-less chemical-mechanical polishing |
| US6964923B1 (en) * | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
| US6602834B1 (en) * | 2000-08-10 | 2003-08-05 | Ppt Resaerch, Inc. | Cutting and lubricating composition for use with a wire cutting apparatus |
| US6632129B2 (en) * | 2001-02-15 | 2003-10-14 | 3M Innovative Properties Company | Fixed abrasive article for use in modifying a semiconductor wafer |
| EP1385915A1 (en) * | 2001-04-12 | 2004-02-04 | Rodel Holdings, Inc. | Polishing composition having a surfactant |
| US6677239B2 (en) * | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
| US7063597B2 (en) * | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| CN100551623C (zh) * | 2003-01-10 | 2009-10-21 | 3M创新有限公司 | 应用于化学机械平面化的垫结构 |
| US7160178B2 (en) * | 2003-08-07 | 2007-01-09 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
| EP1566420A1 (en) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| US6997785B1 (en) * | 2004-12-23 | 2006-02-14 | 3M Innovative Properties Company | Wafer planarization composition and method of use |
| US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
| JP2007220891A (ja) * | 2006-02-16 | 2007-08-30 | Toshiba Corp | ポストｃｍｐ処理液、およびこれを用いた半導体装置の製造方法 |
-
2008
- 2008-08-25 CN CN200880123618XA patent/CN101910353A/zh active Pending
- 2008-08-25 US US12/739,804 patent/US20100243471A1/en not_active Abandoned
- 2008-08-25 JP JP2010532097A patent/JP2011502362A/ja not_active Withdrawn
- 2008-08-25 WO PCT/US2008/074199 patent/WO2009058463A1/en active Application Filing
- 2008-08-25 KR KR1020107011735A patent/KR20100093537A/ko not_active Withdrawn
- 2008-08-25 EP EP08798624A patent/EP2217670A4/en not_active Withdrawn
- 2008-09-08 TW TW097134422A patent/TW200924045A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011502362A5 (enrdf_load_stackoverflow) | ||
| JP2010537404A5 (enrdf_load_stackoverflow) | ||
| TWI738812B (zh) | 表面處理組合物 | |
| JP2019116627A (ja) | 研磨用組成物、研磨方法および基板の製造方法 | |
| KR100979737B1 (ko) | 반도체 재료 기판의 폴리싱 방법 | |
| KR102571098B1 (ko) | 연마액 및 연마 방법 | |
| JP2007088424A5 (enrdf_load_stackoverflow) | ||
| KR20150083085A (ko) | 연마용 조성물 | |
| TW201131636A (en) | Improved method of texturing semiconductor substrates | |
| JP2012511251A5 (enrdf_load_stackoverflow) | ||
| CN102190962A (zh) | 抛光组合物及利用该组合物的抛光方法 | |
| TW201124515A (en) | Slurry for chemical mechanical polishing and method for polishing substrate using the same | |
| CN106061463B (zh) | 用于个人护理和家用清洁的凝胶擦拭物 | |
| JP2011502362A (ja) | ウエハを研磨するための組成物、方法及びプロセス | |
| KR20170063597A (ko) | 연마용 조성물 및 연마 방법 | |
| KR20090087927A (ko) | 화학 기계적 평탄화 조성물, 시스템, 및 사용 방법 | |
| TW201024397A (en) | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate | |
| US7449124B2 (en) | Method of polishing a wafer | |
| Yang et al. | Effect of nanoscale surface topography on the adsorption of globular proteins | |
| JP2017011225A (ja) | 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 | |
| TWI795521B (zh) | 化學機械研磨用組成物及研磨方法 | |
| JP2010501121A5 (enrdf_load_stackoverflow) | ||
| TW201038691A (en) | Polishing composition for nickel phosphorous memory disks | |
| JP6557243B2 (ja) | 研磨用組成物 | |
| JP6127520B2 (ja) | バイオチップ用基板及びその製造方法 |