JP2011502362A - ウエハを研磨するための組成物、方法及びプロセス - Google Patents

ウエハを研磨するための組成物、方法及びプロセス Download PDF

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Publication number
JP2011502362A
JP2011502362A JP2010532097A JP2010532097A JP2011502362A JP 2011502362 A JP2011502362 A JP 2011502362A JP 2010532097 A JP2010532097 A JP 2010532097A JP 2010532097 A JP2010532097 A JP 2010532097A JP 2011502362 A JP2011502362 A JP 2011502362A
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JP
Japan
Prior art keywords
wafer
hydraulic fluid
abrasive
surfactant
fluid according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010532097A
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English (en)
Japanese (ja)
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JP2011502362A5 (https=
Inventor
リ，ナイチャオ
ジェイ． ガグリアルディ，ジョン
ジー． クラーク，フィリップ
エム． サブ，パトリシア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2011502362A publication Critical patent/JP2011502362A/ja
Publication of JP2011502362A5 publication Critical patent/JP2011502362A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2010532097A 2007-10-31 2008-08-25 ウエハを研磨するための組成物、方法及びプロセス Withdrawn JP2011502362A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98421707P 2007-10-31 2007-10-31
PCT/US2008/074199 WO2009058463A1 (en) 2007-10-31 2008-08-25 Composition, method and process for polishing a wafer

Publications (2)

Publication Number Publication Date
JP2011502362A true JP2011502362A (ja) 2011-01-20
JP2011502362A5 JP2011502362A5 (https=) 2011-10-13

Family

ID=40591398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010532097A Withdrawn JP2011502362A (ja) 2007-10-31 2008-08-25 ウエハを研磨するための組成物、方法及びプロセス

Country Status (7)

Country Link
US (1) US20100243471A1 (https=)
EP (1) EP2217670A4 (https=)
JP (1) JP2011502362A (https=)
KR (1) KR20100093537A (https=)
CN (1) CN101910353A (https=)
TW (1) TW200924045A (https=)
WO (1) WO2009058463A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
JP5464055B2 (ja) * 2009-06-02 2014-04-09 日信化学工業株式会社 水性切削液及び水性切削剤
CN102437183B (zh) * 2010-09-29 2015-02-25 中国科学院微电子研究所 半导体器件及其制造方法
WO2014047014A1 (en) * 2012-09-21 2014-03-27 3M Innovative Properties Company Incorporating additives into fixed abrasive webs for improved cmp performance
JP6204029B2 (ja) * 2013-03-06 2017-09-27 出光興産株式会社 水性加工液
EP3789519A1 (en) * 2019-09-03 2021-03-10 Imec VZW Nano-ridge engineering
KR102251921B1 (ko) * 2019-10-02 2021-05-17 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법
KR102358801B1 (ko) * 2019-12-27 2022-02-08 주식회사 케이씨텍 표면 처리 조성물 및 이를 이용한 표면 처리 방법
CN118617296A (zh) * 2023-03-03 2024-09-10 长鑫存储技术有限公司 一种半导体结构的制备方法及半导体结构

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152917B1 (en) * 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6294470B1 (en) * 1999-12-22 2001-09-25 International Business Machines Corporation Slurry-less chemical-mechanical polishing
US6964923B1 (en) * 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
US6602834B1 (en) * 2000-08-10 2003-08-05 Ppt Resaerch, Inc. Cutting and lubricating composition for use with a wire cutting apparatus
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6679928B2 (en) * 2001-04-12 2004-01-20 Rodel Holdings, Inc. Polishing composition having a surfactant
US6677239B2 (en) * 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US7063597B2 (en) * 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
WO2004062849A1 (en) * 2003-01-10 2004-07-29 3M Innovative Properties Company Pad constructions for chemical mechanical planarization applications
US7160178B2 (en) * 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
EP1566420A1 (en) * 2004-01-23 2005-08-24 JSR Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
JP2007220891A (ja) * 2006-02-16 2007-08-30 Toshiba Corp ポストｃｍｐ処理液、およびこれを用いた半導体装置の製造方法

Also Published As

Publication number Publication date
US20100243471A1 (en) 2010-09-30
CN101910353A (zh) 2010-12-08
KR20100093537A (ko) 2010-08-25
WO2009058463A1 (en) 2009-05-07
EP2217670A1 (en) 2010-08-18
TW200924045A (en) 2009-06-01
EP2217670A4 (en) 2011-07-13

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